GaN and ZnO-based materials and devices:
Gespeichert in:
| Weitere Verfasser: | |
|---|---|
| Format: | Buch |
| Sprache: | English |
| Veröffentlicht: |
Berlin [u.a.]
Springer
2012
|
| Schriftenreihe: | Springer Series in material science
156 |
| Schlagworte: | |
| Online-Zugang: | Inhaltstext Inhaltsverzeichnis |
| Beschreibung: | XVII, 485 S. Ill., graph. Darst. |
| ISBN: | 3642235204 9783642235207 |
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IMAGE 1
CONTENTS
1 HETEROEPITAXY OF NONPOLAR AND SEMIPOLAR GAN 1
QIAN SUN AND JUNG HAN 1.1 INTRODUCTION 1
1.2 KINETIC WULFF PLOT (F-PLOT) OF GAN 3
1.3 HETEROEPITAXY OF NONPOLAR GAN ON PLANAR SUBSTRATES 6 1.4
HETEROEPITAXY OF SEMIPOLAR GAN ON PLANAR SUBSTRATES 15 1.5 OCE OF
SEMIPOLAR GAN ON NONPLANAR SUBSTRATES 22
1.6 SUMMARY AND OUTLOOK 23
REFERENCES 25
2 HIGH-QUALITY AL-RICH ALGAN ALLOYS 29
B.N. PANTHA, J.Y. LIN, AND H.X. JIANG 2.1 INTRODUCTION 29
2.2 GROWTHOF ALGAN 31
2.2.1 TYPICAL GROWTH CONDITION OF ALGAN 31
2.2.2 EFFECT OF IN AS SURFACTANT IN AL-RICH ALGAN ALLOYS 32 2.2.3
AIN/ALJGAI-JN QUANTUM WELL STRUCTURES GROWN ON SUBSTRATES WITH DIFFERENT
ORIENTATIONS 35 2.3 FUNDAMENTAL PROPERTIES OF AL X GAI_.Y N ALLOYS 43
2.3.1 BAND STRUCTURES OF ALJCGA!-^ N ALLOYS 43
2.3.2 BANDGAP BOWING IN AUGAI_ X N ALLOYS 44
2.3.3 UNIQUE OPTICAL PROPERTIES OF ALGAN ALLOYS 46
2.3.4 EXCITON LOCALIZATION IN ALGAN ALLOYS 49
2.4 OPTICAL PROPERTIES OF AL^GAI-* N 57
2.4.1 IMPURITY TRANSITIONS IN AL^GAI-J; N ALLOYS 57
2.4.2 IMPURITY TRANSITION IN MG-DOPED ALGAN ALLOYS 62 2.4.3 ENERGY LEVEL
OF VARIOUS ACCEPTORS IN A1N 64
2.5 ELECTRICAL PROPERTIES OF ALGAN 66
2.5.1 N-TYPE AU GAI _ X N ALLOYS 66
2.5.2 P-TYPE AL X GA,_ X N 71
BIBLIOGRAFISCHE INFORMATIONEN HTTP://D-NB.INFO/1013868072
DIGITALISIERT DURCH
IMAGE 2
VII; CONTENTS
2.6 CONCLUDING REMARKS 76
REFERENCES 77
3 DEEP ULTRAVIOLET LIGHT-EMITTING DIODES 83
MICHAEL SHUR, MAX SHATALOV, ALEX DOBRINSKY, AND REMIS GASKA 3.1
INTRODUCTION 83
3.2 MATERIALS PROPERTIES 91
3.3 MATERIALS GROWTH 92
3.4 DESIGN OF DEEP UV LEDS. 96
3.4.1 DUV LED FABRICATION 102
3.4.2 DUV LED PERFORMANCE 103
3.4.3 CONCLUSION 112
A.I BAND STRUCTURE PARAMETERS FOR A1N, INN, AND GAN (STR2011) 114
A.2 MECHANICAL AND POLARIZATION PROPERTIES OF A1N, INN, AND GAN (STR
2011) 114
A.3 IONIZATION ENERGIES AND NONRADIATIVE RECOMBINATION CONSTANTS FOR
A1N, INN, AND GAN (STR 2011) 115
A.4 OPTICAL CONSTANTS FOR MATERIALS USED FOR LED DESIGN 115 A.5
DEFINITION OF EFFICIENCIES OF ULTRA-VIOLET LIGHT EMITTING DIODE (UV LED)
115
REFERENCES 116
4 GREEN NITRIDE LEDS 121
XIAN-AN CAO 4.1 THE "GREEN GAP" 121
4.2 ADVANCES IN GROWTH OF C-PLANE GREEN LEDS 123
4.2.1 GREEN LEDS ON (0001) SAPPHIRE 123
4.2.2 GREEN LEDS ON FREE-STANDING (0001) GAN 128
4.3 PIEZOELECTRIC POLARIZATION IN C-PLANE GREEN LEDS 133
4.4 GREEN LEDS ON NONPOLAR AND SEMIPOLAR SUBSTRATES 136 4.5 CARRIER
LOCALIZATION IN GREEN LEDS 139
4.6 EFFICIENCY DROOP IN GREEN LEDS 144
4.7 CONCLUSIONS 148
REFERENCES 149
5 IMPROVED LIGHT EXTRACTION EFFICIENCY IN GAN-BASED LIGHT EMITTING
DIODES 153
JIHYUN KIM 5.1 PECETCH: C-PLANEVS. A-PLANE 154
5.2 NATURAL LITHOGRAPHY 156
5.3 PHOTONIC CRYSTAL 161
5.4 PLASMONICS 161
5.5 CHIP SHAPING 162
5.6 PATTERNED SAPPHIRE SUBSTRATE 163
REFERENCES 163
IMAGE 3
CONTENTS
GAN-BASED SENSORS 165
F. REN, B.H. CHU, K.H. CHEN, C.Y. CHANG, VICTOR CHEN, AND S.J. PEARTON
6.1 INTRODUCTION 165
6.2 GAS SENSING 167
6.2.1 H 2 SENSING 167
6.2.2 02 SENSING 169
6.2.3 CO 2 SENSING 171
6.2.4 CH 4 SENSING 173
6.3 SENSOR FUNCTIONALIZATION 174
6.4 PH MEASUREMENT 175
6.5 EXHALED BREATH CONDENSATE 177
6.6 HEAVY METAL DETECTION 179
6.7 BIOTOXIN SENSORS 182
6.7.1 BOTULINUM 182
6.8 BIOMEDICAI APPLICATIONS 184
6.8.1 PROSTATE CANCER DETECTION 186
6.8.2 KIDNEY INJURY MOLECULE DETECTION 187
6.8.3 BREAST CANCER 189
6.8.4 LACTIC ACID 191
6.8.5 CHLORIDE ION DETECTION 193
6.8.6 PRESSURE SENSING 194
6.8.7 TRAUMATIC BRAIN INJURY 196
6.9 NERVE CELL MONITORING 197
6.10 INN SENSORS 199
6.11 SUMMARY AND CONCLUSIONS 202
REFERENCES 203
GAN HEMT TECHNOLOGY 209
WAYNE JOHNSON AND EDWIN L. PINER 7.1 INTRODUCTION 209
7.2 SUBSTRATE CONSIDERATIONS 210
7.2.1 SILICON 211
7.2.2 SIC 212
7.2.3 SAPPHIRE 212
7.2.4 GAN 213
7.3 EPITAXY AND DEVICE STRUCTURES 213
7.3.1 GAN EPITAXY 213
7.3.2 NUCLEATION 214
7.3.3 BUFFER LAYER STRUCTURE 216
7.4 DEVICE LAYER STRUCTURE 218
7.4.1 GAN CAP 219
7.4.2 A1N INTERLAYER 220
7.4.3 BACK BARRIER STRUCTURES 220
IMAGE 4
X CONTENTS
7.5 HEMT DEVICE PROCESSING 221
7.5.1 METALIZATION 222
7.5.2 ISOLATION 223
7.5.3 PASSIVATION AND FIELD PLATING 224
7.6 HEMT PACKAGING AND PRODUCTS 226
7.6.1 AIR CAVITY PACKAGING 226
7.6.2 PLASTIC OVERMOLD 227
7.6.3 GAN HEMT PRODUCTS 228
7.7 FUTURE DIRECTIONS FOR GAN HEMTS 229
7.7.1 GAN-ON-DIAMOND 229
7.7.2 HETEROINTEGRATION 230
7.7.3 INAIN HEMTS 231
REFERENCES 234
8 RECENT ADVANCES IN HIGH-VOLTAGE GAN MOS-GATED TRANSISTORS FOR POWER
ELECTRONICS APPLICATIONS 239
T. PAUL CHOW AND Z. LI 8.1 INTRODUCTION 239
8.2 DEVICE STRUCTURES AND DESIGN 240
8.3 DEVICE DESIGN 241
8.4 EXPERIMENTAL RESULTS 244
8.5 TECHNICAL CHALLENGES AND RELIABILITY 248
8.6 SUMMARY 249
REFERENCES 249
9 RADIATION EFFECTS IN GAN 251
ALEXANDER Y. POLYAKOV 9.1 INTRODUCTION 251
9.2 FUNDAMENTAL STUDIES OF RADIATION DEFECTS IN GAN AND RELATED
MATERIALS 252
9.2.1 THRESHOLD DISPLACEMENT ENERGY: THEORY AND EXPERIMENT 252
9.2.2 RADIATION DEFECTS IN GAN: DEFECTS LEVELS, EFFECTS ON CHARGE
CARRIERS CONCENTRATION, MOBILITY, LIFETIME OF CHARGE CARRIERS, THERMAL
STABILITY OF DEFECTS 253
9.3 RADIATION EFFECTS IN OTHER ILL-NITRIDES 274
9.4 RADIATION EFFECTS IN GAN SCHOTTKY DIODES, IN ALGAN/GAN AND GAN/INGAN
HETEROJUNCTIONS AND QUANTUM WELLS 276
9.5 RADIATION EFFECTS IN GAN-BASED DEVICES 282
9.6 PROSPECTS OF RADIATION TECHNOLOGY FOR GAN 285
9.7 SUMMARY AND CONCLUSIONS 287
REFERENCES 289
IMAGE 5
CONTENTS XI
10 RECENT ADVANCES IN GAN NANOWIRES: SURFACE-CONTROLLED CONDUCTION AND
SENSING APPLICATIONS 295
RUEI-SAN CHEN, ABHIJIT GANGULY, LI-CHYONG CHEN, AND KUEI-HSIEN CHEN 10.1
INTRODUCTION 295
10.2 SURFACE-CONTROLLED TRANSPORT 296
10.2.1 SURFACE PHOTOCONDUCTION 296
10.2.2 SIZE-DEPENDENT TRANSPORT PROPERTIES 300
10.2.3 PERSISTENT PHOTOCONDUCTIVITY 303
10.3 MOLECULAR SENSING 305
10.3.1 GAIN AMPLIFIED AND SELECTIVE GAS SENSING 305 10.3.2 BIOMOLECULAR
SENSING 306
10.4 SUMMARY 312
REFERENCES 312
11 MINORITY CARRIER TRANSPORT IN ZNO AND RELATED MATERIALS 317 ELENA
FLITSYIAN, ZINOVY DASHEVSKY, AND LEONID CHERNYAK 11.1 INTRODUCTION 317
11.2 ROLE OF MINORITY CARRIER DIFFUSION LENGTH IN BIPOLAR DEVICE
PERFORMANCE 319
11.3 METHODS FOR DETERMINATION OF MINORITY CARRIER LIFETIME AND
DIFFUSION LENGTH 320
11.3.1 EBIC TECHNIQUE 321
11.3.2 SPVTECHNIQUE 322
11.3.3 TRPL TECHNIQUE 322
11.4 TEMPERATURE DEPENDENCE OF MINORITY CARRIER DIFFUSION LENGTH AND
LIFETIME 323
11.4.1 STUDIES IN N-TYPE ZNO 323
11.4.2 STUDIES IN P-TYPE ZNO DOPED WITH ANTIMONY 326 11.5 STUDIES OF
MINORITY CARRIER RECOMBINATION 331
11.5.1 INFLUENCE OF ELECTRON TRAPPING ON MINORITY CARRIER DIFFUSION
LENGTH 332
11.5.2 OPTICAL STUDIES OF THE EFFECTS OF ELECTRON TRAPPING ON MINORITY
CARRIER LIFETIME 335
11.5.3 MECHANISM OF ELECTRON INJECTION EFFECT 341
11.5.4 DEVICE APPLICATIONS 342
11.6 SUMMARY 345
REFERENCES 345
12 CONDUCTION IN DEGENERATELY DOPED ZUI- X AL^O THIN FILMS 349 MICHAEL
SNURE, DAVID TOLEDO, PAUL SLUSSER AND ASHUTOSH TIWARI 12.1 INTRODUCTION
349
12.2 EXPERIMENTAL PROCEDURE 350
12.3 RESULTS 351
IMAGE 6
XII CONTENTS
12.4 DISCUSSION 356
12.5 SUMMARY 358
REFERENCES 359
13 MULTIFUNCTIONAL ZNO NANOSTRUCTURE-BASED DEVICES 361 YICHENG LU, PAVEL
I. REYES, JIAN ZHONG, AND HANNHONG CHEN 13.1 INTRODUCTION 361
13.2 MULTIFUNCTIONAL ZNO NANOSTRUCTURES FOR BIOSENSING 362 13.2.1
WETTABILITY CONTROL ON ZNO NANOSTRUCTURES 363 13.2.2
BIOFUNCTIONALIZATION OF ZNO NANOSTRUCTURES 367 13.2.3 MORPHOLOGY EFFECTS
OF ZNO NANOSTRUCTURES
ON ADHESION OF BIOSPECIES 369
13.2.4 ZNO NANOSTRUCTURE-BASED ACOUSTIC BIOSENSORS 371 13.3 THE 3D
ELECTRODES CONSISTING OF ZNO TCO FILMS AND NANOSTRUCTURES FOR
OPTOELECTRONIC DEVICES 381
13.3.1 INTEGRATION OF ZNO TCO FILMS AND ZNO NANOTIP ARRAYS 381
13.3.2 ZNO 3D PHOTOELECTRODES FOR DYE-SENSITIZED SOLAR CELLS 387
13.3.3 ZNO 3D ELECTRODES FOR ENHANCED EMISSION EFFICIENCY IN GAN
LED. 398
13.4 CONCLUSION 407
REFERENCES 408
14 ZNO/MGZNO QUANTUM WELLS 413
JEFFREY DAVIS AND CHENNUPATI JAGADISH 14.1 PROPERTIES OF CONVENTIONAL
ZNO/ZNMGO QUANTUM WELLS 414 14.2 UNCONVENTIONAL QW STRUCTURES 423
14.2.1 NON-POLARZNO 423
14.2.2 EFFECTS OF VARYING THE POTENTIAL PROFILE 424
14.2.3 COUPLED QUANTUM WELLS 429
14.3 PROGRESS TOWARDS ZNO/ZNMGO QW DEVICES 430
14.4 SUMMARY 432
REFERENCES 432
15 N-TYPE OXIDE SEMICONDUCTOR THIN-FILM TRANSISTORS 435 PEDRO BARQUINHA,
RODRIGO MARTINS, AND ELVIRA FORTUNATO 15.1 DEVICE STRUCTURE AND
OPERATION 435
15.2 SEMICONDUCTOR MATERIALS FOR TFTS 440
15.2.1 THE ERA OF OXIDE SEMICONDUCTORS 440
15.2.2 COMPARISON OF N-TYPE OXIDE TFTS WITH EXISTING TFT SEMICONDUCTOR
MATERIAL TECHNOLOGIES 443 15.3 MULTICOMPONENT OXIDE TFTS @ CENIMAT 446
15.3.1 ROLE OF OXYGEN DURING GIZO SPUTTERING 446
15.3.2 ROLE OF DEPOSITION PRESSURE AND IF POWER DENSITY DURING GIZO
SPUTTERING 449
IMAGE 7
CONTENTS XIII
15.3.3 ROLE OF GIZO TARGET COMPOSITION 451
15.3.4 ROLE OF GIZO THICKNESS 453
15.3.5 ROLE OF TFT'S ANNEALING TEMPERATURE 459
15.3.6 ROLE OF PASSIVATION LAYER 462
15.3.7 CONSTANT DRAIN CURRENT AND CONSTANT GATE BIAS STRESS MEASUREMENTS
466
15.4 CONCLUSIONS AND OUTLOOK 471
REFERENCES 473
INDEX 477 |
| any_adam_object | 1 |
| author2 | Pearton, Stephen |
| author2_role | edt |
| author2_variant | s p sp |
| author_facet | Pearton, Stephen |
| building | Verbundindex |
| bvnumber | BV039884498 |
| classification_rvk | UP 3120 UP 3150 UQ 1100 |
| ctrlnum | (OCoLC)778377949 (DE-599)DNB1013868072 |
| dewey-full | 621.38152 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
| dewey-raw | 621.38152 |
| dewey-search | 621.38152 |
| dewey-sort | 3621.38152 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Physik Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Book |
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| genre | (DE-588)4143413-4 Aufsatzsammlung gnd-content |
| genre_facet | Aufsatzsammlung |
| id | DE-604.BV039884498 |
| illustrated | Illustrated |
| indexdate | 2024-07-21T00:24:20Z |
| institution | BVB |
| isbn | 3642235204 9783642235207 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-024743660 |
| oclc_num | 778377949 |
| open_access_boolean | |
| owner | DE-11 |
| owner_facet | DE-11 |
| physical | XVII, 485 S. Ill., graph. Darst. |
| publishDate | 2012 |
| publishDateSearch | 2012 |
| publishDateSort | 2012 |
| publisher | Springer |
| record_format | marc |
| series | Springer Series in material science |
| series2 | Springer series in material science |
| spelling | GaN and ZnO-based materials and devices Stephen Pearton (ed.) Berlin [u.a.] Springer 2012 XVII, 485 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Springer series in material science 156 Chemischer Sensor (DE-588)4259288-4 gnd rswk-swf Lumineszenzdiode (DE-588)4125154-4 gnd rswk-swf Nanostruktur (DE-588)4204530-7 gnd rswk-swf Feldeffekttransistor (DE-588)4131472-4 gnd rswk-swf Zinkoxid (DE-588)4190864-8 gnd rswk-swf Optoelektronik (DE-588)4043687-1 gnd rswk-swf Nanodraht (DE-588)4707308-1 gnd rswk-swf Dünnschichttransistor (DE-588)4150834-8 gnd rswk-swf Indiumnitrid (DE-588)4460230-3 gnd rswk-swf Quantenwell (DE-588)4124010-8 gnd rswk-swf Aluminiumnitrid (DE-588)4226770-5 gnd rswk-swf Galliumnitrid (DE-588)4375592-6 gnd rswk-swf (DE-588)4143413-4 Aufsatzsammlung gnd-content Galliumnitrid (DE-588)4375592-6 s Aluminiumnitrid (DE-588)4226770-5 s Indiumnitrid (DE-588)4460230-3 s Lumineszenzdiode (DE-588)4125154-4 s Feldeffekttransistor (DE-588)4131472-4 s Chemischer Sensor (DE-588)4259288-4 s Nanodraht (DE-588)4707308-1 s DE-604 Zinkoxid (DE-588)4190864-8 s Nanostruktur (DE-588)4204530-7 s Quantenwell (DE-588)4124010-8 s Dünnschichttransistor (DE-588)4150834-8 s Optoelektronik (DE-588)4043687-1 s Pearton, Stephen edt Erscheint auch als Online-Ausgabe 978-3-642-23521-4 Springer Series in material science 156 (DE-604)BV000683335 156 text/html http://deposit.dnb.de/cgi-bin/dokserv?id=3859621&prov=M&dok_var=1&dok_ext=htm Inhaltstext DNB Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=024743660&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | GaN and ZnO-based materials and devices Springer Series in material science Chemischer Sensor (DE-588)4259288-4 gnd Lumineszenzdiode (DE-588)4125154-4 gnd Nanostruktur (DE-588)4204530-7 gnd Feldeffekttransistor (DE-588)4131472-4 gnd Zinkoxid (DE-588)4190864-8 gnd Optoelektronik (DE-588)4043687-1 gnd Nanodraht (DE-588)4707308-1 gnd Dünnschichttransistor (DE-588)4150834-8 gnd Indiumnitrid (DE-588)4460230-3 gnd Quantenwell (DE-588)4124010-8 gnd Aluminiumnitrid (DE-588)4226770-5 gnd Galliumnitrid (DE-588)4375592-6 gnd |
| subject_GND | (DE-588)4259288-4 (DE-588)4125154-4 (DE-588)4204530-7 (DE-588)4131472-4 (DE-588)4190864-8 (DE-588)4043687-1 (DE-588)4707308-1 (DE-588)4150834-8 (DE-588)4460230-3 (DE-588)4124010-8 (DE-588)4226770-5 (DE-588)4375592-6 (DE-588)4143413-4 |
| title | GaN and ZnO-based materials and devices |
| title_auth | GaN and ZnO-based materials and devices |
| title_exact_search | GaN and ZnO-based materials and devices |
| title_full | GaN and ZnO-based materials and devices Stephen Pearton (ed.) |
| title_fullStr | GaN and ZnO-based materials and devices Stephen Pearton (ed.) |
| title_full_unstemmed | GaN and ZnO-based materials and devices Stephen Pearton (ed.) |
| title_short | GaN and ZnO-based materials and devices |
| title_sort | gan and zno based materials and devices |
| topic | Chemischer Sensor (DE-588)4259288-4 gnd Lumineszenzdiode (DE-588)4125154-4 gnd Nanostruktur (DE-588)4204530-7 gnd Feldeffekttransistor (DE-588)4131472-4 gnd Zinkoxid (DE-588)4190864-8 gnd Optoelektronik (DE-588)4043687-1 gnd Nanodraht (DE-588)4707308-1 gnd Dünnschichttransistor (DE-588)4150834-8 gnd Indiumnitrid (DE-588)4460230-3 gnd Quantenwell (DE-588)4124010-8 gnd Aluminiumnitrid (DE-588)4226770-5 gnd Galliumnitrid (DE-588)4375592-6 gnd |
| topic_facet | Chemischer Sensor Lumineszenzdiode Nanostruktur Feldeffekttransistor Zinkoxid Optoelektronik Nanodraht Dünnschichttransistor Indiumnitrid Quantenwell Aluminiumnitrid Galliumnitrid Aufsatzsammlung |
| url | http://deposit.dnb.de/cgi-bin/dokserv?id=3859621&prov=M&dok_var=1&dok_ext=htm http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=024743660&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| volume_link | (DE-604)BV000683335 |
| work_keys_str_mv | AT peartonstephen ganandznobasedmaterialsanddevices |