Fowler-Nordheim field emission: effects in semiconductor nanostructures
Gespeichert in:
| Hauptverfasser: | , |
|---|---|
| Format: | Buch |
| Sprache: | English |
| Veröffentlicht: |
Berlin [u.a.]
Springer
2012
|
| Schriftenreihe: | Springer series in solid state sciences
170 |
| Schlagworte: | |
| Online-Zugang: | Inhaltstext Inhaltsverzeichnis |
| Beschreibung: | Literaturangaben |
| Beschreibung: | XXII, 338 S. graph. Darst. |
| ISBN: | 9783642204920 3642204929 9783642204937 |
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| 264 | 1 | |a Berlin [u.a.] |b Springer |c 2012 | |
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Datensatz im Suchindex
| _version_ | 1809404002395226112 |
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| adam_text |
IMAGE 1
CONTENTS
PART I FOWLER-NORDHEIM FIELD EMISSION FROM QUANTUM WIRES AND
SUPERLATTICES OF NONPARABOLIC SEMICONDUCTORS
1 FIELD EMISSION FROM QUANTUM WIRES OF NONPARABOLIC SEMICONDUCTORS 3
1.1 INTRODUCTION 3
1.2 THEORETICAL BACKGROUND 7
1.2.1 THE FIELD EMISSION FROM QUANTUM WIRES OF NONLINEAR OPTICAL
SEMICONDUCTORS 7
1.2.2 THE FIELD EMISSION FROM QUANTUM WIRES OF III- V SEMICONDUCTORS 11
1.2.3 THE FIELD EMISSION FROM QUANTUM WIRES OF II- VI SEMICONDUCTORS 18
1.2.4 THE FIELD EMISSION FROM QUANTUM WIRES OF BISMUTH 19 1.2.5 THE
FIELD EMISSION FROM QUANTUM WIRES OF IV-VI SEMICONDUCTORS 24
1.2.6 THE FIELD EMISSION FROM QUANTUM WIRES OF STRESSED SEMICONDUCTORS
26
1.2.7 THE FIELD EMISSION FROM QUANTUM WIRES OF TELLURIUM 28 1.2.8 THE
FIELD EMISSION FROM QUANTUM WIRES OF GALLIUM PHOSPHIDE 29
1.2.9 THE FIELD EMISSION FROM QUANTUM WIRES OF PLATINUM ANTIMONIDE 31
1.2.10 THE FIELD EMISSION FROM QUANTUM WIRES OF BISMUTH TELLURIDE 32
1.2.11 THE FIELD EMISSION FROM QUANTUM WIRES OF GERMANIUM. 34 1.2.12
THE FIELD EMISSION FROM QUANTUM WIRES OF GALLIUM ANTIMONIDE 37
1.2.13 THE FIELD EMISSION FROM QUANTUM WIRES OF II-V MATERIALS 38
BIBLIOGRAFISCHE INFORMATIONEN HTTP://D-NB.INFO/1010602101
DIGITALISIERT DURCH
IMAGE 2
CONTENTS
1.3 RESULT AND DISCUSSIONS 39
1.4 OPEN RESEARCH PROBLEMS 53
REFERENCES 63
FIELD EMISSION FROM QUANTUM WIRE SUPERLATTICES OF NON-PARABOLIC
SEMICONDUCTORS 71
2.1 INTRODUCTION 71
2.2 THEORETICAL BACKGROUND 72
2.2.1 THE FIELD EMISSION FROM III-V QUANTUM WIRE SUPERLATTICES WITH
GRADED INTERFACES 72
2.2.2 THE FIELD EMISSION FROM II-VI QUANTUM WIRE SUPERLATTICES WITH
GRADED INTERFACES 77
2.2.3 THE FIELD EMISSION FROM IV-VI QUANTUM WIRE SUPERLATTICES WITH
GRADED INTERFACES 82
2.2.4 THE FIELD EMISSION FROM HGTE/CDTE QUANTUM WIRE SUPERLATTICES WITH
GRADED INTERFACES 87
2.2.5 THE FIELD EMISSION FROM QUANTUM WIRE III-V EFFECTIVE MASS
SUPERLATTICES 92
2.2.6 THE FIELD EMISSION FROM QUANTUM WIRE II-VI EFFECTIVE MASS
SUPERLATTICES 94
2.2.7 THE FIELD EMISSION FROM QUANTUM WIRE IV-VI EFFECTIVE MASS
SUPERLATTICES 96
2.2.8 THE FIELD EMISSION FROM QUANTUM WIRE HGTE/CDTE EFFECTIVE MASS
SUPERLATTICES 99
2.3 RESULT AND DISCUSSIONS 101
2.4 OPEN RESEARCH PROBLEMS 104
REFERENCES 106
FIELD EMISSION FROM QUANTUM CONFINED SEMICONDUCTORS UNDER MAGNETIC
QUANTIZATION 109
3.1 INTRODUCTION 109
3.2 THEORITICAL BACKGROUND 110
3.2.1 THE FIELD EMISSION FROM NONLINEAR OPTICAL SEMICONDUCTORS UNDER
MAGNETIC QUANTIZATION 110 3.2.2 THE FIELD EMISSION FROM III-V
SEMICONDUCTORS UNDER MAGNETIC QUANTIZATION 112
3.2.3 THE FIELD EMISSION FROM II-VI SEMICONDUCTORS UNDER MAGNETIC
QUANTIZATION 119
3.2.4 THE FIELD EMISSION FROM UNDER BISMUTH MAGNETIC QUANTIZATION 119
3.2.5 THE FIELD EMISSION FROM IV-VI SEMICONDUCTORS UNDER MAGNETIC
QUANTIZATION 124
3.2.6 THE FIELD EMISSION FROM STRESSED SEMICONDUCTORS UNDER MAGNETIC
QUANTIZATION 129
IMAGE 3
CONTENTS XV
3.2.7 THE FIELD EMISSION FROM TELLURIUM UNDER MAGNETIC QUANTIZATION 130
3.2.8 THE FIELD EMISSION FROM N-GALLIUM PHOSPHIDE UNDER MAGNETIC
QUANTIZATION 131
3.2.9 THE FIELD EMISSION FROM PLATINUM ANTIMONIDE UNDER MAGNETIC
QUANTIZATION 133
3.2.10 THE FIELD EMISSION FROM BISMUTH TELLURIDE UNDER MAGNETIC
QUANTIZATION 135
3.2.11 THE FIELD EMISSION FROM GERMANIUM UNDER MAGNETIC QUANTIZATION 136
3.2.12 THE FIELD EMISSION FROM GALLIUM ANTIMONIDE UNDER MAGNETIC
QUANTIZATION 138
3.2.13 THE FIELD EMISSION FROM II-V SEMICONDUCTORS UNDER MAGNETIC
QUANTIZATION 139
3.3 RESULT AND DISCUSSIONS 140
3.4 OPEN RESEARCH PROBLEMS 152
REFERENCES 153
4 FIELD EMISSION OF NONPARABOLIC SEMICONDUCTORS UNDER MAGNETIC
QUANTIZATION 157
4.1 INTRODUCTION 157
4.2 THEORETICAL BACKGROUND 157
4.2.1 THE FIELD EMISSION FROM III-V SUPERLATTICES WITH GRADED INTERFACES
UNDER MAGNETIC QUANTIZATION 157 4.2.2 THE FIELD EMISSION FROM II-VI
SUPERLATTICES WITH GRADED INTERFACES UNDER MAGNETIC QUANTIZATION 161
4.2.3 THE FIELD EMISSION FROM IV-VI SUPERLATTICES
WITH GRADED INTERFACES UNDER MAGNETIC QUANTIZATION 165 4.2.4 THE FIELD
EMISSION FROM HGTE/CDTE SUPERLATTICES WITH GRADED INTERFACES UNDER
MAGNETIC QUANTIZATION 168
4.2.5 THE FIELD EMISSION FROM III-V EFFECTIVE MASS SUPERLATTICES UNDER
MAGNETIC QUANTIZATION 172 4.2.6 THE FIELD EMISSION FROM II-VI EFFECTIVE
MASS SUPERLATTICES UNDER MAGNETIC QUANTIZATION 173 4.2.7 THE FIELD
EMISSION FROM IV-VI EFFECTIVE MASS
SUPERLATTICES UNDER MAGNETIC QUANTIZATION 175 4.2.8 THE FIELD EMISSION
FROM HGTE/CDTE EFFECTIVE MASS SUPERLATTICES UNDER MAGNETIC QUANTIZATION
177 4.3 RESULT AND DISCUSSIONS 178
4.4 OPEN RESEARCH PROBLEMS 181
REFERENCES 184
IMAGE 4
XVI CONTENTS
PART II FOWLER-NORDHEIM FIELD EMISSION FROM QUANTUM- CONFINED III-V
SEMICONDUCTORS IN THE PRESENCE OF LIGHT WAVES
5 FIELD EMISSION FROM QUANTUM-CONFINED III-V SEMICONDUCTORS IN THE
PRESENCE OF LIGHT WAVES 187
5.1 INTRODUCTION 187
5.2 THEORETICAL BACKGROUND 187
5.2.1 FIELD EMISSION FROM III-V SEMICONDUCTORS UNDER MAGNETIC
QUANTIZATION IN THE PRESENCE OF LIGHT WAVES 187
5.2.2 FIELD EMISSION FROM QUANTUM WIRES OF III-V SEMICONDUCTORS 192
5.2.3 FIELD EMISSION FROM EFFECTIVE MASS SUPERLATTICES OF III-V
SEMICONDUCTORS IN THE PRESENCE OF LIGHT WAVES UNDER MAGNETIC
QUANTIZATION 194
5.2.4 FIELD EMISSION FROM QUANTUM WIRE EFFECTIVE MASS SUPERLATTICES OF
III-V SEMICONDUCTORS 200 5.2.5 FIELD EMISSION FROM SUPERLATTICES OF
III-V SEMICONDUCTORS WITH GRADED INTERFACES UNDER
MAGNETIC QUANTIZATION 204
5.2.6 FIELD EMISSION FROM QUANTUM WIRE SUPERLATTICES OF III-V
SEMICONDUCTORS WITH GRADED INTERFACES 210
5.3 RESULT AND DISCUSSIONS 215
5.4 OPEN RESEARCH PROBLEMS 221
REFERENCES 230
PART III FOWLER-NORDHEIM FIELD EMISSION FROM QUANTUM- CONFINED
OPTOELECTRONIC SEMICONDUCTORS IN THE PRESENCE OF INTENSE ELECTRIC FIELD
6 FIELD EMISSION FROM QUANTUM-CONFINED OPTOELECTRONIC SEMICONDUCTORS 233
6.1 INTRODUCTION 233
6.2 THEORETICAL BACKGROUND 234
6.2.1 FIELD EMISSION FROM OPTOELECTRONIC SEMICONDUCTORS UNDER MAGNETIC
QUANTIZATION 234 6.2.2 FIELD EMISSION FROM QUANTUM WIRES OF
OPTOELECTRONIC SEMICONDUCTORS 248
6.2.3 FIELD EMISSION FROM EFFECTIVE MASS SUPERLATTICES OF OPTOELECTRONIC
SEMICONDUCTORS UNDER MAGNETIC QUANTIZATION 249
IMAGE 5
CONTENTS XVUE
6.2.4 FIELD EMISSION FROM QUANTUM WIRE EFFECTIVE MASS SUPERLATTICES OF
OPTOELECTRONIC SEMICONDUCTORS 253 6.2.5 FIELD EMISSION FROM
SUPERLATTICES OF OPTOELECTRONIC SEMICONDUCTORS WITH GRADED
INTERFACES UNDER MAGNETIC QUANTIZATION 256
6.2.6 FIELD EMISSION FROM QUANTUM WIRE SUPERLATTICES OF OPTOELECTRONIC
SEMICONDUCTORS WITH GRADED INTERFACES 262
6.3 RESULTS AND DISCUSSION 267
6.4 OPEN RESEARCH PROBLEM 280
REFERENCES 280
7 APPLICATIONS AND BRIEF REVIEW OF EXPERIMENTAL RESULTS 281 7.1
INTRODUCTION 281
7.2 APPLICATIONS 281
7.2.1 DEBYE SCREENING LENGTH 281
7.2.2 CARRIER CONTRIBUTION TO THE ELASTIC CONSTANTS 284 7.2.3 EFFECTIVE
ELECTRON MASS 291
7.2.4 DIFFUSIVITY-MOBILITY RATIO 295
7.2.5 MEASUREMENT OF BANDGAP IN THE PRESENCE OF LIGHT WAVES 299
7.2.6 DIFFUSION COEFFICIENT OF THE MINORITY CARRIERS 302 7.2.7 NONLINEAR
OPTICAL RESPONSE 303
7.2.8 THIRD-ORDER NONLINEAR OPTICAL SUSCEPTIBILITY 303 7.2.9 GENERALIZED
RAMAN GAIN 303
7.3 BRIEF REVIEW OF EXPERIMENTAL WORKS 304
7.3.1 FIELD EMISSION FROM CARBON NANOTUBES IN THE PRESENCE OF STRONG
ELECTRIC FIELD 304
7.3.2 OPTIMIZATION OF FOWLER-NORDHEIM (FN) FIELD EMISSION CURRENT FROM
NANOSTRUCTURED MATERIALS 309 7.3.3 VERY BRIEF DESCRIPTION OF
EXPERIMENTAL RESULTS OF FNFE FROM NANOSTRUCTURED MATERIALS 312
7.4 OPEN RESEARCH PROBLEM 323
REFERENCES 323
8 CONCLUSION AND FUTURE RESEARCH 329
REFERENCES 333
MATERIAL INDEX 335
SUBJECT INDEX 337 |
| any_adam_object | 1 |
| author | Bhattacharya, Sitangshu Ghatak, Kamakhya Prasad 1953- |
| author_GND | (DE-588)136807151 (DE-588)136807135 |
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| dewey-ones | 537 - Electricity and electronics |
| dewey-raw | 537.6226 |
| dewey-search | 537.6226 |
| dewey-sort | 3537.6226 |
| dewey-tens | 530 - Physics |
| discipline | Physik |
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| indexdate | 2024-09-06T00:22:04Z |
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| language | English |
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| owner_facet | DE-19 DE-BY-UBM DE-11 DE-83 DE-703 |
| physical | XXII, 338 S. graph. Darst. |
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| series | Springer series in solid state sciences |
| series2 | Springer series in solid state sciences |
| spelling | Bhattacharya, Sitangshu Verfasser (DE-588)136807151 aut Fowler-Nordheim field emission effects in semiconductor nanostructures Sitangshu Bhattacharya ; Kamakhya Prasad Ghatak Berlin [u.a.] Springer 2012 XXII, 338 S. graph. Darst. txt rdacontent n rdamedia nc rdacarrier Springer series in solid state sciences 170 Literaturangaben Halbleiter (DE-588)4022993-2 gnd rswk-swf Nanostruktur (DE-588)4204530-7 gnd rswk-swf Feldemission (DE-588)4153913-8 gnd rswk-swf Halbleiter (DE-588)4022993-2 s Nanostruktur (DE-588)4204530-7 s Feldemission (DE-588)4153913-8 s DE-604 Ghatak, Kamakhya Prasad 1953- Verfasser (DE-588)136807135 aut Springer series in solid state sciences 170 (DE-604)BV000016582 170 X:MVB text/html http://deposit.dnb.de/cgi-bin/dokserv?id=3702256&prov=M&dok_var=1&dok_ext=htm Inhaltstext DNB Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=024738675&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Bhattacharya, Sitangshu Ghatak, Kamakhya Prasad 1953- Fowler-Nordheim field emission effects in semiconductor nanostructures Springer series in solid state sciences Halbleiter (DE-588)4022993-2 gnd Nanostruktur (DE-588)4204530-7 gnd Feldemission (DE-588)4153913-8 gnd |
| subject_GND | (DE-588)4022993-2 (DE-588)4204530-7 (DE-588)4153913-8 |
| title | Fowler-Nordheim field emission effects in semiconductor nanostructures |
| title_auth | Fowler-Nordheim field emission effects in semiconductor nanostructures |
| title_exact_search | Fowler-Nordheim field emission effects in semiconductor nanostructures |
| title_full | Fowler-Nordheim field emission effects in semiconductor nanostructures Sitangshu Bhattacharya ; Kamakhya Prasad Ghatak |
| title_fullStr | Fowler-Nordheim field emission effects in semiconductor nanostructures Sitangshu Bhattacharya ; Kamakhya Prasad Ghatak |
| title_full_unstemmed | Fowler-Nordheim field emission effects in semiconductor nanostructures Sitangshu Bhattacharya ; Kamakhya Prasad Ghatak |
| title_short | Fowler-Nordheim field emission |
| title_sort | fowler nordheim field emission effects in semiconductor nanostructures |
| title_sub | effects in semiconductor nanostructures |
| topic | Halbleiter (DE-588)4022993-2 gnd Nanostruktur (DE-588)4204530-7 gnd Feldemission (DE-588)4153913-8 gnd |
| topic_facet | Halbleiter Nanostruktur Feldemission |
| url | http://deposit.dnb.de/cgi-bin/dokserv?id=3702256&prov=M&dok_var=1&dok_ext=htm http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=024738675&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| volume_link | (DE-604)BV000016582 |
| work_keys_str_mv | AT bhattacharyasitangshu fowlernordheimfieldemissioneffectsinsemiconductornanostructures AT ghatakkamakhyaprasad fowlernordheimfieldemissioneffectsinsemiconductornanostructures |