Transport in metal-oxide-semiconductor structures: mobile ions effects on the oxide properties
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Elektronisch E-Book |
| Sprache: | English |
| Veröffentlicht: |
Berlin [u.a.]
Springer
2011
|
| Schriftenreihe: | Engineering materials
|
| Schlagworte: | |
| Online-Zugang: | FHN01 UBT01 Volltext |
| Beschreibung: | 1 Online-Ressource |
| ISBN: | 9783642163036 9783642163043 |
| DOI: | 10.1007/978-3-642-16304-3 |
Internformat
MARC
| LEADER | 00000nmm a2200000 c 4500 | ||
|---|---|---|---|
| 001 | BV039858006 | ||
| 003 | DE-604 | ||
| 005 | 00000000000000.0 | ||
| 007 | cr|uuu---uuuuu | ||
| 008 | 120201s2011 gw |||| o||u| ||||||eng d | ||
| 020 | |a 9783642163036 |9 978-3-642-16303-6 | ||
| 020 | |a 9783642163043 |c online |9 978-3-642-16304-3 | ||
| 024 | 7 | |a 10.1007/978-3-642-16304-3 |2 doi | |
| 035 | |a (OCoLC)707188037 | ||
| 035 | |a (DE-599)BVBBV039858006 | ||
| 040 | |a DE-604 |b ger |e rakddb | ||
| 041 | 0 | |a eng | |
| 044 | |a gw |c XA-DE-BE | ||
| 049 | |a DE-703 |a DE-92 | ||
| 082 | 0 | |a 537.6226 |2 22/ger | |
| 084 | |a UP 3200 |0 (DE-625)146379: |2 rvk | ||
| 084 | |a ZN 3460 |0 (DE-625)157317: |2 rvk | ||
| 084 | |a 530 |2 sdnb | ||
| 100 | 1 | |a Bentarzi, Hamid |e Verfasser |4 aut | |
| 245 | 1 | 0 | |a Transport in metal-oxide-semiconductor structures |b mobile ions effects on the oxide properties |c Hamid Bentarzi |
| 246 | 1 | 3 | |a Transport in metal oxide semiconductor structures |
| 264 | 1 | |a Berlin [u.a.] |b Springer |c 2011 | |
| 300 | |a 1 Online-Ressource | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b c |2 rdamedia | ||
| 338 | |b cr |2 rdacarrier | ||
| 490 | 0 | |a Engineering materials | |
| 650 | 0 | 7 | |a Ionenleitung |0 (DE-588)4162322-8 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a MOS |0 (DE-588)4130209-6 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Siliciumdioxid |0 (DE-588)4077447-8 |2 gnd |9 rswk-swf |
| 689 | 0 | 0 | |a MOS |0 (DE-588)4130209-6 |D s |
| 689 | 0 | 1 | |a Siliciumdioxid |0 (DE-588)4077447-8 |D s |
| 689 | 0 | 2 | |a Ionenleitung |0 (DE-588)4162322-8 |D s |
| 689 | 0 | |5 DE-604 | |
| 856 | 4 | 0 | |u https://doi.org/10.1007/978-3-642-16304-3 |x Verlag |3 Volltext |
| 912 | |a ZDB-2-CMS | ||
| 999 | |a oai:aleph.bib-bvb.de:BVB01-024717616 | ||
| 966 | e | |u https://doi.org/10.1007/978-3-642-16304-3 |l FHN01 |p ZDB-2-CMS |x Verlag |3 Volltext | |
| 966 | e | |u https://doi.org/10.1007/978-3-642-16304-3 |l UBT01 |p ZDB-2-CMS |x Verlag |3 Volltext | |
Datensatz im Suchindex
| _version_ | 1804148795258175488 |
|---|---|
| any_adam_object | |
| author | Bentarzi, Hamid |
| author_facet | Bentarzi, Hamid |
| author_role | aut |
| author_sort | Bentarzi, Hamid |
| author_variant | h b hb |
| building | Verbundindex |
| bvnumber | BV039858006 |
| classification_rvk | UP 3200 ZN 3460 |
| collection | ZDB-2-CMS |
| ctrlnum | (OCoLC)707188037 (DE-599)BVBBV039858006 |
| dewey-full | 537.6226 |
| dewey-hundreds | 500 - Natural sciences and mathematics |
| dewey-ones | 537 - Electricity and electronics |
| dewey-raw | 537.6226 |
| dewey-search | 537.6226 |
| dewey-sort | 3537.6226 |
| dewey-tens | 530 - Physics |
| discipline | Physik Elektrotechnik / Elektronik / Nachrichtentechnik |
| doi_str_mv | 10.1007/978-3-642-16304-3 |
| format | Electronic eBook |
| fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01814nmm a2200493 c 4500</leader><controlfield tag="001">BV039858006</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">00000000000000.0</controlfield><controlfield tag="007">cr|uuu---uuuuu</controlfield><controlfield tag="008">120201s2011 gw |||| o||u| ||||||eng d</controlfield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9783642163036</subfield><subfield code="9">978-3-642-16303-6</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9783642163043</subfield><subfield code="c">online</subfield><subfield code="9">978-3-642-16304-3</subfield></datafield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1007/978-3-642-16304-3</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)707188037</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV039858006</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">rakddb</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="044" ind1=" " ind2=" "><subfield code="a">gw</subfield><subfield code="c">XA-DE-BE</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-703</subfield><subfield code="a">DE-92</subfield></datafield><datafield tag="082" ind1="0" ind2=" "><subfield code="a">537.6226</subfield><subfield code="2">22/ger</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">UP 3200</subfield><subfield code="0">(DE-625)146379:</subfield><subfield code="2">rvk</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">ZN 3460</subfield><subfield code="0">(DE-625)157317:</subfield><subfield code="2">rvk</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">530</subfield><subfield code="2">sdnb</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Bentarzi, Hamid</subfield><subfield code="e">Verfasser</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Transport in metal-oxide-semiconductor structures</subfield><subfield code="b">mobile ions effects on the oxide properties</subfield><subfield code="c">Hamid Bentarzi</subfield></datafield><datafield tag="246" ind1="1" ind2="3"><subfield code="a">Transport in metal oxide semiconductor structures</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">Berlin [u.a.]</subfield><subfield code="b">Springer</subfield><subfield code="c">2011</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">1 Online-Ressource</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="490" ind1="0" ind2=" "><subfield code="a">Engineering materials</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Ionenleitung</subfield><subfield code="0">(DE-588)4162322-8</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">MOS</subfield><subfield code="0">(DE-588)4130209-6</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Siliciumdioxid</subfield><subfield code="0">(DE-588)4077447-8</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">MOS</subfield><subfield code="0">(DE-588)4130209-6</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="1"><subfield code="a">Siliciumdioxid</subfield><subfield code="0">(DE-588)4077447-8</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="2"><subfield code="a">Ionenleitung</subfield><subfield code="0">(DE-588)4162322-8</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://doi.org/10.1007/978-3-642-16304-3</subfield><subfield code="x">Verlag</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">ZDB-2-CMS</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-024717616</subfield></datafield><datafield tag="966" ind1="e" ind2=" "><subfield code="u">https://doi.org/10.1007/978-3-642-16304-3</subfield><subfield code="l">FHN01</subfield><subfield code="p">ZDB-2-CMS</subfield><subfield code="x">Verlag</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="966" ind1="e" ind2=" "><subfield code="u">https://doi.org/10.1007/978-3-642-16304-3</subfield><subfield code="l">UBT01</subfield><subfield code="p">ZDB-2-CMS</subfield><subfield code="x">Verlag</subfield><subfield code="3">Volltext</subfield></datafield></record></collection> |
| id | DE-604.BV039858006 |
| illustrated | Not Illustrated |
| indexdate | 2024-07-10T00:12:48Z |
| institution | BVB |
| isbn | 9783642163036 9783642163043 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-024717616 |
| oclc_num | 707188037 |
| open_access_boolean | |
| owner | DE-703 DE-92 |
| owner_facet | DE-703 DE-92 |
| physical | 1 Online-Ressource |
| psigel | ZDB-2-CMS |
| publishDate | 2011 |
| publishDateSearch | 2011 |
| publishDateSort | 2011 |
| publisher | Springer |
| record_format | marc |
| series2 | Engineering materials |
| spelling | Bentarzi, Hamid Verfasser aut Transport in metal-oxide-semiconductor structures mobile ions effects on the oxide properties Hamid Bentarzi Transport in metal oxide semiconductor structures Berlin [u.a.] Springer 2011 1 Online-Ressource txt rdacontent c rdamedia cr rdacarrier Engineering materials Ionenleitung (DE-588)4162322-8 gnd rswk-swf MOS (DE-588)4130209-6 gnd rswk-swf Siliciumdioxid (DE-588)4077447-8 gnd rswk-swf MOS (DE-588)4130209-6 s Siliciumdioxid (DE-588)4077447-8 s Ionenleitung (DE-588)4162322-8 s DE-604 https://doi.org/10.1007/978-3-642-16304-3 Verlag Volltext |
| spellingShingle | Bentarzi, Hamid Transport in metal-oxide-semiconductor structures mobile ions effects on the oxide properties Ionenleitung (DE-588)4162322-8 gnd MOS (DE-588)4130209-6 gnd Siliciumdioxid (DE-588)4077447-8 gnd |
| subject_GND | (DE-588)4162322-8 (DE-588)4130209-6 (DE-588)4077447-8 |
| title | Transport in metal-oxide-semiconductor structures mobile ions effects on the oxide properties |
| title_alt | Transport in metal oxide semiconductor structures |
| title_auth | Transport in metal-oxide-semiconductor structures mobile ions effects on the oxide properties |
| title_exact_search | Transport in metal-oxide-semiconductor structures mobile ions effects on the oxide properties |
| title_full | Transport in metal-oxide-semiconductor structures mobile ions effects on the oxide properties Hamid Bentarzi |
| title_fullStr | Transport in metal-oxide-semiconductor structures mobile ions effects on the oxide properties Hamid Bentarzi |
| title_full_unstemmed | Transport in metal-oxide-semiconductor structures mobile ions effects on the oxide properties Hamid Bentarzi |
| title_short | Transport in metal-oxide-semiconductor structures |
| title_sort | transport in metal oxide semiconductor structures mobile ions effects on the oxide properties |
| title_sub | mobile ions effects on the oxide properties |
| topic | Ionenleitung (DE-588)4162322-8 gnd MOS (DE-588)4130209-6 gnd Siliciumdioxid (DE-588)4077447-8 gnd |
| topic_facet | Ionenleitung MOS Siliciumdioxid |
| url | https://doi.org/10.1007/978-3-642-16304-3 |
| work_keys_str_mv | AT bentarzihamid transportinmetaloxidesemiconductorstructuresmobileionseffectsontheoxideproperties AT bentarzihamid transportinmetaloxidesemiconductorstructures |