Handbook of wafer bonding:
Gespeichert in:
| Weitere Verfasser: | |
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| Format: | Buch |
| Sprache: | English |
| Veröffentlicht: |
Weinheim
Wiley-VCH
2012
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| Schlagworte: | |
| Online-Zugang: | Inhaltstext Inhaltsverzeichnis |
| Beschreibung: | XXXI, 395 S. Ill., graph. Darst. |
| ISBN: | 3527326464 9783527326464 9783527644223 |
Internformat
MARC
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| 245 | 1 | 0 | |a Handbook of wafer bonding |c ed. by Peter Ramm ... |
| 264 | 1 | |a Weinheim |b Wiley-VCH |c 2012 | |
| 300 | |a XXXI, 395 S. |b Ill., graph. Darst. | ||
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Datensatz im Suchindex
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IMAGE 1
CONTENTS
PREFACE XV OBITUARY XVII LIST OF CONTRIBUTORS XXI INTRODUCTION XXV
PART ONE TECHNOLOGIES 1
A. ADHESIVE AND ANODIC BONDING 3
1 CLASS FRIT WAFER BONDING 3
ROY KNECHTEL
1.1 PRINCIPLE OF GLASS FRIT BONDING 3
1.2 GLASS FRIT MATERIALS 4
1.3 SCREEN PRINTING: PROCESS FOR BRINGING GLASS FRIT MATERIAL ONTO
WAFERS 5 1.4 THERMAL CONDITIONING: PROCESS FOR TRANSFORMING PRINTED
PASTE INTO GLASS FOR BONDING 8 1.5 WAFER BOND PROCESS: ESSENTIAL
WAFER-TO-WAFER MOUNTING BY A GLASS
FRIT INTERLAYER 11
1.6 CHARACTERIZATION OF GLASS FRIT BONDS 14 1.7 APPLICATIONS OF GLASS
FRIT WAFER BONDING 15 1.8 CONCLUSIONS 16
REFERENCES 17
2 WAFER BONDING USING SPIN-ON CLASS AS BONDING MATERIAL 19 VIOREL DRAGOI
2.1 SPIN-ON GLASS MATERIALS 19
2.2 WAFER BONDING WITH SOG LAYERS 21 2.2.1 EXPERIMENTAL 21 2.2.2 WAFER
BONDING WITH SILICATE SOG LAYERS 22 2.2.3 WAFER BONDING WITH
PLANARIZATION SOG 28
BIBLIOGRAFISCHE INFORMATIONEN HTTP://D-NB.INFO/1013143949
DIGITALISIERT DURCH
IMAGE 2
VI CONTENTS
2.2 A APPLICATIONS OF ADHESIVE WAFER BONDING WITH
SOG LAYERS 29
2.2.5 CONCLUSION 30
REFERENCES 31
3 POLYMER ADHESIVE WAFER BONDING 33 FRANK NIKLAUS ANDJIAN-QIANG LU 3.1
INTRODUCTION 33
3.2 POLYMER ADHESIVES 34
3.2.1 POLYMER ADHESION MECHANISMS 34 3.2.2 PROPERTIES OF POLYMER
ADHESIVES 36 3.2.3 POLYMER ADHESIVES FOR WAFER BONDING 38 3.3 POLYMER
ADHESIVE WAFER BONDING TECHNOLOGY 42
3.3.1 POLYMER ADHESIVE WAFER BONDING PROCESS 43 3.3.2 LOCALIZED POLYMER
ADHESIVE WAFER BONDING 50 3.4 WAFER-TO-WAFER ALIGNMENT IN POLYMER
ADHESIVE WAFER BONDING 52
3.5 EXAMPLES FOR POLYMER ADHESIVE WAFER BONDING PROCESSES AND PROGRAMS
54 3.5.1 BONDING WITH THERMOSETTING POLYMERS FOR PERMANENT WAFER BONDS
(BCB) OR FOR TEMPORARY WAFER BONDS
(MR-I 9000) 54
3.5.2 BONDING WITH THERMOPLASTIC POLYMER (HD-3007) FOR TEMPORARY AND
PERMANENT WAFER BONDS 56 3.6 SUMMARY AND CONCLUSIONS 57
REFERENCES 58
4 ANODIC BONDING 63
ADRIANA COZMA LAPADATU AND KAN SCHJOLBERG-HENRIKSEN 4.1 INTRODUCTION 63
4.2 MECHANISM OF ANODIC BONDING 64 4.2.1 GLASS POLARIZATION 64 4.2.2
ACHIEVING INTIMATE CONTACT 65 4.2.3 INTERFACE REACTIONS 66 4.3 BONDING
CURRENT 67
4.4 GLASSES FOR ANODIC BONDING 68
4.5 CHARACTERIZATION OF BOND QUALITY 69 4.6 PRESSURE INSIDE
VACUUM-SEALED CAVITIES 70 4.7 EFFECT OF ANODIC BONDING ON FLEXIBLE
STRUCTURES 71 4.8 ELECTRICAL DEGRADATION OF DEVICES DURING ANODIC
BONDING 71
4.8.1 DEGRADATION BY SODIUM CONTAMINATION 72 4.8.2 DEGRADATION BY HIGH
ELECTRIC FIELDS 73 4.9 BONDING WITH THIN FILMS 75
4.10 CONCLUSIONS 76
REFERENCES 77
IMAGE 3
CONTENTS VII
B. DIRECT WAFER BONDING 81
5 DIRECT WAFER BONDING 81
MANFRED REICHE AND ULRICH COESELE 5.1 INTRODUCTION 81
5.2 SURFACE CHEMISTRY AND PHYSICS 82 5.3 WAFER BONDING TECHNIQUES 84
5.3.1 HYDROPHILIC WAFER BONDING 84
5.3.2 HYDROPHOBIE WAFER BONDING 86 5.3.3 LOW-TEMPERATURE WAFER BONDING
88 5.3.4 WAFER BONDING IN ULTRAHIGH VACUUM 89 5.4 PROPERTIES OF BONDED
INTERFACES 90 5.5 APPLICATIONS OF WAFER BONDING 93 5.5.1 ADVANCED
SUBSTRATES FOR MICROELECTRONICS 93 5.5.2 MEMS AND NANOELECTROMECHANICAL
SYSTEMS 95 5.6 CONCLUSIONS 95
REFERENCES 96
6 PLASMA-ACTIVATED BONDING 101 MAIK WIEMER, DIRK WUENSCH, JOERG BRAEUER,
AND THOMAS CESSNER 6.1 INTRODUCTION 101
6.2 THEORY 102
6.2.1 (SILICON) DIRECT BONDING 102 6.2.2 MECHANISMS OF PLASMA ON SILICON
SURFACES 103 6.2.3 PHYSICAL DEFINITION OF A PLASMA 104 6.3
CLASSIFICATION OF PA B 104
6.3.1 LOW-PRESSURE PAB 105 6.3.2 ATMOSPHERIC-PRESSURE PAB 106 6.4
PROCEDURE OF PAB 207
6.4.1 PROCESS FLOW 107
6.4.2 CHARACTERIZATION TECHNIQUES 108 6.4.3 EXPERIMENTS AND RESULTS 110
6.5 APPLICATIONS FOR PAB 111
6.5.1 PRESSURE SENSOR 112 6.5.2 OPTICAL MICROSYSTEM 112 6.5.3
MICROFLUIDICS PACKAGING 113 6.5.4 BACKSIDE-ILLUMINATED CMOS IMAGE SENSOR
113 6.5.5 CMOS COMPATIBILITY OF LOW-PRESSURE PAB 114 6.6 CONCLUSION IJ5
REFERENCES 115
C. METAL BONDING 139
7 AU/SN SOLDER 119
HERMANN OPPERMANN AND MATTHIAS HUTTER 7.1 INTRODUCTION 119
IMAGE 4
VIII CONTENTS
7.2 AU/SN SOLDER ALLOY 120
7.3 REFLOW SOLDERING 127
7.4 THERMODE SOLDERING 130
7.5 ASPECTS OF THREE-DIMENSIONAL INTEGRATION AND WAFER-LEVEL ASSEMBLY
132 7.6 SUMMARY AND CONCLUSIONS 135
REFERENCES 136
8 EUTECTIC AU-LN BONDING 139
MITSUMASA KOYANAGI AND MAKOTO MOTOYOSHI 8.1 INTRODUCTION 139
8.2 ORGANIC/METAL HYBRID BONDING 140 8.3 ORGANIC/IN-AU HYBRID BONDING
142 8.3.1 IN-AU PHASE DIAGRAM AND BONDING PRINCIPLE 142 8.3.2 FORMATION
OF IN-AU MICROBUMPS BY A PLANARIZED LIFTOFF
METHOD 144
8.3.3 EUTECTIC IN-AU BONDING AND EPOXY ADHESIVE INJECTION 146 8.3.4
ELECTRICAL CHARACTERISTICS OF IN-AU MICROBUMPS 148 8.4 THREE-DIMENSIONAL
LSI TEST CHIPS FABRICATED BY EUTECTIC IN-AU BONDING 149 8.5 HIGH-DENSITY
AND NARROW-PITCH MIRCOBUMP TECHNOLOGY 152 8.6 CONCLUSION 257
ACKNOWLEDGMENT 157 REFERENCES 257
9 THERMOCOMPRESSION CU-CU BONDING OF BLANKET AND PATTERNED WAFERS 262
KUAN- NENG CHEN AND CHUAN SENG TAN 9.1 INTRODUCTION 262
9.2 CLASSIFICATION OF THE CU BONDING TECHNIQUE 262 9.2.1
THERMOCOMPRESSION CU BONDING 162 9.2.2 SURFACE-ACTIVATED CU BONDING 262
9.3 FUNDAMENTAL PROPERTIES OF CU BONDING 263 9.3.1 MORPHOLOGY AND OXIDE
EXAMINATION OF CU BONDED LAYER 263 9.3.2 MICROSTRUCTURE EVOLUTION DURING
CU BONDING 264 9.3.3 ORIENTATION EVOLUTION DURING CU BONDING 265 9.4
DEVELOPMENT OF CU BONDING 266 9.4.1 FABRICATION AND SURFACE PREPARATION
OF CU BOND PADS 266 9.4.2 PARAMETERS OF CU BONDING 267 9.4.3 STRUCTURAL
DESIGN 268 9.5 CHARACTERIZATION OF CU BONDING QUALITY 269
9.5.1 MECHANICAL TESTS 269 9.5.2 IMAGE ANALYSIS 270 9.5.3 ELECTRICAL
CHARACTERIZATION 272 9.5.4 THERMAL RELIABILITY 272
IMAGE 5
CONTENTS IX
9.6 ALIGNMENT ACCURACY OF CU-CU BONDING 272
9.7 RELIABLE CU BONDING AND MULTILAYER STACKING 272 9.8 NONBLANKET CU-CU
BONDING 274 9.9 LOW-TEMPERATURE ( 300C) CU-CU BONDING 276 9.10
APPLICATIONS OF CU WAFER BONDING 278 9.11 SUMMARY 278
REFERENCES 279
10 WAFER-LEVEL SOLID-LIQUID INTERDIFFUSION BONDING 282 NILS HOIVIK AND
KNUT AASMUNDTVEIT 10.1 BACKGROUND 282
10.1.1 SOLID-LIQUID INTERDIFFUSION BONDING PROCESS 282 10.1.2 SLID
BONDING COMPARED WITH SOLDERING 282 10.1.3 MATERIAL SYSTEMS FOR SLID
BONDING 283 10.2 CU-SN SLID BONDING 289 10.2.1 CU-SN MATERIAL PROPERTIES
AND REQUIRED METAL
THICKNESSES 2 90
10.2.2 BONDING PROCESSES 292 10.2.3 PRETREATMENT REQUIREMENTS FOR SLID
BONDING 295 10.2.4 FLUXLESS BONDING 296 10.3 AU-SN SLID BONDING 299
10.3.1 AU-SN MATERIAL PROPERTIES AND REQUIRED METAL
THICKNESSES 199
10.3.2 BONDING PROCESSES 299 10.4 APPLICATION OF SLID BONDING 202 10.4.1
CU-SN BONDING 201 10.4.2 AU-SN BONDING 204 10.5 INTEGRITY OF SLID
BONDING 207 10.5.1 ELECTRICAL RELIABILITY AND ELECTROMIGRATION TESTING
207 10.5.2 MECHANICAL STRENGTH OF SLID BONDS 207 10.6 SUMMARY 220
REFERENCES 222
D. HYBRID METAL/DIELECTRIC BONDING 225
11 HYBRID METAL/POLYMER WAFER BONDING PLATFORM 225
JIAN-QIANG LU, J. JAY MCMAHON, AND RONALDJ. GUTMANN 11.1 INTRODUCTION
225
11.2 THREE-DIMENSIONAL PLATFORM USING HYBRID CU/BCB BONDING 227 11.3
BASELINE BONDING PROCESS FOR HYBRID CU/BCB BONDING PLATFORM 220 11.4
EVALUATION OF CU/BCB HYBRID BONDING PROCESSING ISSUES 222 11.4.1 CMP AND
BONDING OF PARTIALLY CURED BCB 222
11.4.2 CU/BCB CMP SURFACE PROFILE 223
IMAGE 6
CONTENTS
11.4.3 HYBRID CU/BCB BONDING INTERFACES 224
11.4.4 TOPOGRAPHY ACCOMMODATION CAPABILITY OF PARTIALLY CURED BCB 227
HAS ELECTRICAL CHARACTERIZATION OF HYBRID CU/BCB BONDING 232 11.5
SUMMARY AND CONCLUSIONS 232
ACKNOWLEDGMENTS 233 REFERENCES 233
12 CU/SIO 2 HYBRID BONDING 237
LEA DI CIOCCIO
12.1 INTRODUCTION 237
12.2 BLANKET CU/SIO 2 DIRECT BONDING PRINCIPLE 239 12.2.1 CHEMICAL
MECHANICAL POLISHING PARAMETERS 239 12.2.2 BONDING QUALITY AND ALIGNMENT
243 12.3 BLANKET COPPER DIRECT BONDING PRINCIPLE 245 12.4 ELECTRICAL
CHARACTERIZATION 252 12.5 DIE-TO-WAFER BONDING 255 12.5.1 DAISY CHAIN
STRUCTURES 256 12.6 CONCLUSION 257
ACKNOWLEDGMENT 257 REFERENCES 258
13 METAL/SILICON OXIDE HYBRID BONDING 262 PAUL ENQUIST 13.1 INTRODUCTION
262
13.2 METAL/NON-ADHESIVE HYBRID BONDING-METAL DBI 262 13.3 METAL/SILICON
OXIDE DBI 262 13.3.1 METAL/SILICON OXIDE DBI SURFACE FABRICATION 263
13.3.2 METAL/SILICON OXIDE DBI SURFACE PATTERNING 264 13.3.3
METAL/SILICON OXIDE DBI SURFACE TOPOGRAPHY 264 13.3.4 METAL/SILICON
OXIDE DBI SURFACE ROUGHNESS 264
13.3.5 METAL/SILICON OXIDE DBI SURFACE ACTIVATION AND TERMINATION 265
13.3.6 METAL/SILICON OXIDE DBI ALIGNMENT AND HYBRID SURFACE CONTACT 265
13.3.7 METAL PARAMETERS RELEVANT TO DBI SURFACE FABRICATION AND
ELECTRICAL
INTERCONNECTION 268 13.3.8 DBI METAL/SILICON OXIDE STATE OF THE ART 270
13.4 METAL/SILICON NITRIDE DBI 272 13.5 METAL/SILICON OXIDE DBI HYBRID
BONDING APPLICATIONS 273
13.5.1 PIXELATED 3D ICS 273 13.5.2 THREE-DIMENSIONAL HETEROGENEOUS
INTEGRATION 275 13.5.3 CMOS (ULTRA) LOW-K 3D INTEGRATION 276 13.6
SUMMARY 276
REFERENCES 277
IMAGE 7
CONTENTS \ XI
PART TWO APPLICATIONS 279
14 MICROELECTROMECHANICAL SYSTEMS 282 MAAIKE M.V. TAKLO 14.1
INTRODUCTION 282
14.2 WAFER BONDING FOR ENCAPSULATION OF MEMS 282 14.2.1 PROTECTION
DURING WAFER DICING 282 14.2.2 ROUTING OF ELECTRICAL SIGNAL LINES 282
14.3 WAFER BONDING TO BUILD ADVANCED MEMS STRUCTURES 284 14.3.1 STACKING
OF SEVERAL WAFERS 284 14.3.2 POST-PROCESSING OF BONDED WAFERS 285 14.4
EXAMPLES OF MEMS AND THEIR REQUIREMENTS FOR THE BONDING
PROCESS 286
14.5 INTEGRATION OF SOME COMMON WAFER BONDING PROCESSES 287 14.5.1
FUSION BONDING OF PATTERNED WAFERS 287 14.5.2 ANODIC BONDING OF
PATTERNED WAFERS 290
14.5.3 EUTECTIC BONDING OF PATTERNED WAFERS: AUSN 293 14.6 SUMMARY 297
REFERENCES 297
15 THREE-DIMENSIONAL INTEGRATION 302 PHILIP CARROU, JAMES JIAN-QIANG LU,
AND PETER RAMM 15.1 DEFINITIONS 302
15.2 APPLICATION OF WAFER BONDING FOR 3D INTEGRATION TECHNOLOGY 303 15.3
MOTIVATIONS FOR MOVING TO 3D INTEGRATION 305 15.4 APPLICATIONS OF 3D
INTEGRATION TECHNOLOGY 307
15.4.1 THREE-DIMENSIONAL APPLICATIONS BY EVOLUTION NOT REVOLUTION 307
15.4.2 MICROBUMP BONDING/NO TSV 308 15.4.3 TSV FORMATION/NO STACKING 320
15.4.4 MEMORY 322 15.4.5 MEMORY ON LOGIC 322 15.4.6 REPARTITIONING LOGIC
322 15.4.7 FOUNDRY AND OSAT ACTIVITY 323 15.4.8 OTHER 3D APPLICATIONS
323 15.5 CONCLUSIONS 325
REFERENCES 325
16 TEMPORARY BONDING FOR ENABLING THREE-DIMENSIONAL INTEGRATION AND
PACKAGING 329 RAMA PULIGADDA
16.1 INTRODUCTION 329
16.2 TEMPORARY BONDING TECHNOLOGY OPTIONS 330 16.2.1 KEY REQUIREMENTS
332 16.2.2 FOREMOST TEMPORARY WAFER BONDING TECHNOLOGIES 332
IMAGE 8
XII CONTENTS
16.3 16.3 16.3 1
2
BOUNDARY CONDITIONS FOR SUCCESSFUL PROCESSING 337 UNIFORM AND VOID-FREE
BONDING 337 PROTECTION OF WAFER EDGES DURING THINNING AND SUBSEQUENT
PROCESSING 337 16.4 THREE-DIMENSIONAL INTEGRATION PROCESSES DEMONSTRATED
WITH
THERMOMECHANICAL DEBONDING APPROACH 338 16.4.1 VIA-LAST PROCESS ON CMOS
IMAGE SENSOR DEVICE WAFERS 338 16.4.2 VIA-LAST PROCESS WITH ASPECT RATIO
OF 2:1 342
16.4.3 VIA-LAST PROCESS WITH 50 URN DEPTH USING HIGH-TEMPERATURE TEOS
PROCESS 342 16.4.4 DIE-TO-WAFER STACKING USING INTERCONNECT VIA
SOLID-LIQUID INTERDIFFUSION PROCESS 342 16.5 CONCLUDING REMARKS 343
ACKNOWLEDGMENTS 344 REFERENCES 344
17 TEMPORARY ADHESIVE BONDING WITH RECONFIGURATION OF KNOWN GOOD DIES
FOR THREE-DIMENSIONAL INTEGRATED SYSTEMS 347 ARMIN KLUMPP AND PETER RAMM
17.1 DIE ASSEMBLY WITH SLID BONDING 347 17.2 RECONFIGURATION 348 17.3
WAFER-TO-WAFER ASSEMBLY BY SLID BONDING 349 17A RECONFIGURATION WITH
ULTRATHIN CHIPS 352 17.5 CONCLUSION 352
ACKNOWLEDGMENTS 353 REFERENCES 354
18 THIN WAFER SUPPORT SYSTEM FOR ABOVE 250C PROCESSING AND COLD
DE-BONDING 355 WERNER PAMLER AND FRANZ RICHTER 18.1 INTRODUCTION 355
18.2 PROCESS FLOW 356
18.2.1 RELEASE LAYER PROCESSING 357 18.2.2 CARRIER WAFER PROCESSING 357
18.2.3 BONDING PROCESS 357 18.2.4 THINNING 359 18.2.5 DE-BONDING PROCESS
360 18.2.6 EQUIPMENT 362 18.3 PROPERTIES 362
18.3.1 DEVICE WAFER THICKNESS 362 18.3.2 THICKNESS UNIFORMITY 362 18.3.3
STABILITY 362 18.4 APPLICATIONS 362
18.4.1 BONDING OF BUMPED WAFERS 363
IMAGE 9
CONTENTS XIII
18.4.2 PACKAGING OF ULTRATHIN DIES 363
18.4.3 TSV PROCESSING 364 18.4.4 RE-USING THE CARRIER 364 18.5
CONCLUSIONS 364
ACKNOWLEDGMENTS 365 REFERENCES 365
19 TEMPORARY BONDING: ELECTROSTATIC 367 CHRISTOF LANDESBERGER, ARMIN
KLUMPP, AND KARLHEINZ BOCK 19.1 BASIC PRINCIPLES: ELECTROSTATIC FORCES
BETWEEN PARALLEL PLATES 367 19.1.1 ELECTRIC FIELDS AND ELECTROSTATIC
FORCES IN A PLATE CAPACITOR 368 19.1.2 ELECTROSTATIC ATTRACTION IN A
BIPOLAR CONFIGURATION 369 19.1.3 JOHNSEN-RAHBEK EFFECT 370
19.2 TECHNOLOGICAL CONCEPT FOR MANUFACTURE OF MOBILE ELECTROSTATIC
CARRIERS 372 19.2.1 SELECTION OF SUBSTRATE MATERIAL 372 19.2.2 SELECTION
OF THIN-FILM DIELECTRIC LAYERS 372 19.2.3 ELECTRODE PATTERNS: MATERIALS
AND GEOMETRY 374
19.2.4 EXAMPLES OF MOBILE ELECTROSTATIC CARRIERS 375 19.3
CHARACTERIZATION OF ELECTROSTATIC CARRIERS 376 19.3.1 ELECTRICAL AND
THERMAL PROPERTIES, LEAKAGE CURRENTS 376 19.3.2 POSSIBLE INFLUENCE OF
ELECTROSTATIC FIELDS ON CMOS DEVICES 378 19.4 ELECTROSTATIC CARRIERS FOR
PROCESSING OF THIN AND FLEXIBLE
SUBSTRATES 379
19.4.1 HANDLING AND TRANSFER OF THIN SEMICONDUCTOR WAFERS 379 19.4.2
WAFER THINNING AND BACKSIDE METALLIZATION 380 19.4.3 ELECTROSTATIC
CARRIERS IN PLASMA PROCESSING 380
19 A A ELECTROSTATIC CARRIERS ENABLE BUMPING OF THIN WAFERS 380 19.4.5
ELECTROSTATIC CARRIERS IN WET-CHEMICAL ENVIRONMENTS 382 19.4.6
ELECTROSTATIC HANDLING OF SINGLE DIES 382 19.4.7 PROCESSING OF FOILS AND
INSULATING SUBSTRATES 382 19.5 SUMMARY AND OUTLOOK 382
REFERENCES 383
INDEX 385 |
| any_adam_object | 1 |
| author2 | Ramm, Peter 1940- |
| author2_role | edt |
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| author_GND | (DE-588)172926106 |
| author_facet | Ramm, Peter 1940- |
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| classification_rvk | UP 7570 ZN 4192 |
| ctrlnum | (OCoLC)755072989 (DE-599)DNB1013143949 |
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| dewey-hundreds | 600 - Technology (Applied sciences) |
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| dewey-raw | 621.38152 |
| dewey-search | 621.38152 |
| dewey-sort | 3621.38152 |
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| discipline | Physik Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Book |
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| id | DE-604.BV039825389 |
| illustrated | Illustrated |
| indexdate | 2024-07-21T00:21:44Z |
| institution | BVB |
| isbn | 3527326464 9783527326464 9783527644223 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-024685429 |
| oclc_num | 755072989 |
| open_access_boolean | |
| owner | DE-11 DE-29T DE-634 DE-83 |
| owner_facet | DE-11 DE-29T DE-634 DE-83 |
| physical | XXXI, 395 S. Ill., graph. Darst. |
| publishDate | 2012 |
| publishDateSearch | 2012 |
| publishDateSort | 2012 |
| publisher | Wiley-VCH |
| record_format | marc |
| spelling | Handbook of wafer bonding ed. by Peter Ramm ... Weinheim Wiley-VCH 2012 XXXI, 395 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier MEMS (DE-588)4824724-8 gnd rswk-swf Bonden (DE-588)4232594-8 gnd rswk-swf Wafer (DE-588)4294605-0 gnd rswk-swf Wafer (DE-588)4294605-0 s Bonden (DE-588)4232594-8 s MEMS (DE-588)4824724-8 s DE-604 Ramm, Peter 1940- (DE-588)172926106 edt Erscheint auch als Online-Ausgabe, EPUB 978-3-527-64423-0 Erscheint auch als Online-Ausgabe, MOBI 978-3-527-64425-4 Erscheint auch als Online-Ausgabe, PDF 978-3-527-64424-7 X:MVB text/html http://deposit.dnb.de/cgi-bin/dokserv?id=3847398&prov=M&dok_var=1&dok_ext=htm Inhaltstext DNB Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=024685429&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Handbook of wafer bonding MEMS (DE-588)4824724-8 gnd Bonden (DE-588)4232594-8 gnd Wafer (DE-588)4294605-0 gnd |
| subject_GND | (DE-588)4824724-8 (DE-588)4232594-8 (DE-588)4294605-0 |
| title | Handbook of wafer bonding |
| title_auth | Handbook of wafer bonding |
| title_exact_search | Handbook of wafer bonding |
| title_full | Handbook of wafer bonding ed. by Peter Ramm ... |
| title_fullStr | Handbook of wafer bonding ed. by Peter Ramm ... |
| title_full_unstemmed | Handbook of wafer bonding ed. by Peter Ramm ... |
| title_short | Handbook of wafer bonding |
| title_sort | handbook of wafer bonding |
| topic | MEMS (DE-588)4824724-8 gnd Bonden (DE-588)4232594-8 gnd Wafer (DE-588)4294605-0 gnd |
| topic_facet | MEMS Bonden Wafer |
| url | http://deposit.dnb.de/cgi-bin/dokserv?id=3847398&prov=M&dok_var=1&dok_ext=htm http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=024685429&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| work_keys_str_mv | AT rammpeter handbookofwaferbonding |