Mechanical stress on the nanoscale: simulation, material systems and characterization techniques
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2011
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| Beschreibung: | XXI, 358 S. Ill., graph. Darst. 24 cm |
| ISBN: | 9783527410668 9783527639540 |
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| 245 | 1 | 0 | |a Mechanical stress on the nanoscale |b simulation, material systems and characterization techniques |c ed. by Margrit Hanbücken, Pierre Müller and Ralf B. Wehrspohn |
| 264 | 1 | |a Weinheim |b Wiley-VCH |c 2011 | |
| 300 | |a XXI, 358 S. |b Ill., graph. Darst. |c 24 cm | ||
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| 700 | 1 | |a Müller, Pierre |e Sonstige |4 oth | |
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Datensatz im Suchindex
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| adam_text | IMAGE 1
CONTENTS
PREFACE XV LIST OF CONTRIBUTORS XVII
PART ONE FUNDAMENTALS OF STRESS AND STRAIN ON THE NANOSCALE 1
1 ELASTIC STRAIN RELAXATION: THERMODYNAMICS AND KINETICS 3 FRANK CLAS
1.1 BASICS OF ELASTIC STRAIN RELAXATION 3 1.1.1 INTRODUCTION 3
1.1.2 PRINCIPLES OF CALCULATION 4 1.1.3 METHODS OF CALCULATION: A BRIEF
OVERVIEW 6 1.2 ELASTIC STRAIN RELAXATION IN INHOMOGENEOUS SUBSTITUTIONAL
ALLOYS 7 1.2.1 SPINODAL DECOMPOSITION WITH NO ELASTIC EFFECTS 8 1.2.2
ELASTIC STRAIN RELAXATION IN AN ALLOY WITH MODULATED COMPOSITION 9 1.2.3
STRAIN STABILIZATION AND THE EFFECT OF ELASTIC ANISOTROPY 11 1.2.4
ELASTIC RELAXATION IN THE PRESENCE OF A FREE SURFACE 11
1.3 DIFFUSION 12
1.3.1 DIFFUSION WITHOUT ELASTIC EFFECTS 12 1.3.2 DIFFUSION UNDER STRESS
IN AN ALLOY 13 1.4 STRAIN RELAXATION IN HOMOGENEOUS MISMATCHED EPITAXIAL
LAYERS 14
1.4.1 INTRODUCTION 14
1.4.2 ELASTIC STRAIN RELAXATION 15 1.4.3 CRITICAL THICKNESS 16 1.5
MORPHOLOGICAL RELAXATION OF A SOLID UNDER NONHYDROSTATIC STRESS 17 1.5.1
INTRODUCTION 17
1.5.2 CALCULATION OF THE ELASTIC RELAXATION FIELDS IS 1.5.3 ATG
INSTABILITY 19 1.5.4 KINETICS OF THE ATG INSTABILITY 21 1.5.5 COUPLING
BETWEEN THE MORPHOLOGICAL AND COMPOSITIONAL
INSTABILITIES 21
1.6 ELASTIC RELAXATION OF OD AND ID EPITAXIAL NANOSTRUCTURES 22 1.6.1
QUANTUM DOTS 23
BIBLIOGRAFISCHE INFORMATIONEN HTTP://D-NB.INFO/1012093891
DIGITALISIERT DURCH
IMAGE 2
VI CONTENTS
1.6.2 NANOWIRES 24
REFERENCES 24
1 FUNDAMENTALS OF STRESS AND STRAIN AT THE NANOSCALE LEVEL: TOWARD
NANOELASTICITY 27 PIERRE MUELLER 2.1 INTRODUCTION 27
2.2 THEORETICAL BACKGROUND 28
2.2.1 BULK ELASTICITY: A RECALL 28 2.2.1.1 STRESS AND STRAIN DEFINITION
29 2.2.1.2 EQUILIBRIUM STATE 29
2.2.1.3 ELASTIC ENERGY 30 2.2.1.4 ELASTIC CONSTANTS 30 2.2.2 HOW TO
DESCRIBE SURFACES OR INTERFACES? 31 2.2.3 SURFACES AND INTERFACES
DESCRIBED FROM EXCESS QUANTITIES 34
2.2.3.1 THE SURFACE ELASTIC ENERGY AS AN EXCESS OF THE BULK ELASTIC
ENERGY 34 2.2.3.2 THE SURFACE STRESS AND SURFACE STRAIN CONCEPTS 35
2.2.3.3 SURFACE ELASTIC CONSTANTS 37 2.2.3.4 CONNECTING SURFACE AND BULK
STRESSES 39 2.2.3.5 SURFACE STRESS AND SURFACE TENSION 40 2.2.3.6
SURFACE STRESS AND ADSORPTION 41 2.2.3.7 THE CASE OF GLISSILE INTERFACES
42 2.2.4 SURFACES AND INTERFACES DESCRIBED AS A FOREIGN MATERIAL 42
2.2.4.1 THE SURFACE AS A THIN BULK-LIKE FILM 43
2.2.4.2 THE SURFACE AS AN ELASTIC MEMBRANE 43 2.3 APPLICATIONS: SIZE
EFFECTS DUE TO THE SURFACES 44 2.3.1 LATTICE CONTRACTION OF NANOPARTIDES
44 2.3.2 EFFECTIVE MODULUS OF THIN FREESTANDING PLANE FILMS 46
2.3.3 BENDING, BUCKLING, AND FREE VIBRATIONS OF THIN FILMS 48 2.3.3.1
GENERAL EQUATIONS 48 2.3.3.2 DISCUSSION 50 2.3.4 STATIC BENDING OF
NANOWIRES: AN ANALYSIS OF THE RECENT
LITERATURE 52
2.3.4.1 YOUNG MODULUS VERSUS SIZE: TWO-PHASE MODEL 52 2.3.4.2 YOUNG
MODULUS VERSUS SIZE: SURFACE STRESS MODEL 53 2.3.4.3 PRESTRESS BULK DUE
TO SURFACE STRESSES 53 2.3.5 A SHORT OVERVIEW OF EXPERIMENTAL
DIFFICULTIES 54 2.4 CONCLUSION 55
REFERENCES 56
3 ONSET OF PLASTICITY IN CRYSTALLINE NANOMATERIALS 62 LAURENT
PIZZAGALLI, SANDRINE BROCHARD, AND JULIEN GODET 3.1 INTRODUCTION 61
3.2 THE ROLE OF DISLOCATIONS 63
IMAGE 3
CONTENTS VII
3.3 DRIVING FORCES FOR DISLOCATIONS 63
3.3.1 STRESS 64
3.3.2 THERMAL ACTIVATION 64 3.3.3 COMBINATION OF STRESS AND THERMAL
ACTIVATION 64 3.4 DISLOCATION AND SURFACES: BASIC CONCEPTS 65 3.4.1
FORCES RELATED TO SURFACE 65 3.4.2 BALANCE OF FORCES FOR NUCLEATION 66
3.4.3 FORCES DUE TO LATTICE FRICTION 66 3.4.4 SURFACE MODIFICATIONS DUE
TO DISLOCATIONS 68 3.5 ELASTIC MODELING 68
3.5.1 ELASTIC MODEL 68
3.5.2 PREDICTED ACTIVATION PARAMETERS 70 3.5.3 WHAT IS MISSING? 70
3.5.4 PEIERLS-NABARRO APPROACHES 72 3.6 ATOMISTIC MODELING 72
3.6.1 EXAMPLES OF SIMULATIONS 73 3.6.2 DETERMINATION OF ACTIVATION
PARAMETERS 74 3.6.3 COMPARISON WITH EXPERIMENTS 75
3.6.4 INFLUENCE OF SURFACE STRUCTURE, ORIENTATION, AND CHEMISTRY 76 3.7
EXTENSION TO DIFFERENT GEOMETRIES 78 3.8 DISCUSSION 79
REFERENCES 80
4 RELAXATIONS ON THE NANOSCALE: AN ATOMISTIC VIEW BY NUMERICAL
SIMULATIONS 83 CHRISTINE MOTTET
4.1 INTRODUCTION 84
4.2 THEORETICAL MODELS AND NUMERICAL SIMULATIONS 85 4.2.1 ENERGETIC
MODELS 85 4.2.2 NUMERICAL SIMULATIONS 87
4.2.3 DEFINITIONS OF PHYSICAL QUANTITIES 89 4.3 RELAXATIONS IN SURFACES
AND INTERFACES 91 4.3.1 SURFACE RECONSTRUCTIONS 92 4.3.2 SURFACE ALLOYS:
A SIMPLE CASE OF HETEROATOMIC
ADSORPTION 94
4.3.3 HETEROEPITAXIAL THIN FILMS 96 4.4 RELAXATIONS IN NANODUSTERS 98
4.4.1 FREE NANODUSTERS 99
4.4.2 SUPPORTED NANODUSTERS 100 4.4.3 NANOALLOYS 201
4.5 CONCLUSIONS 103
REFERENCES 204
IMAGE 4
VIII CONTENTS
PART TWO MODEL SYSTEMS WITH STRESS-ENGINEERED PROPERTIES 107
5 ACCOMMODATION OF LATTICE MISFIT IN SEMICONDUCTOR HETEROSTRUCTURE
NANOWIRES 209 VOLKER SCHMIDT ANDJOERG V. WITTEMANN
5.1 INTRODUCTION 209
5.2 DISLOCATIONS IN AXIAL HETEROSTRUCTURE NANOWIRES 222 5.3 DISLOCATIONS
IN CORE-SHELL HETEROSTRUCTURE NANOWIRES 223 5.4 ROUGHENING OF CORE-SHELL
HETEROSTRUCTURE
NANOWIRES 225
5.4.1 ZEROTH-ORDER STRESS AND STRAIN 227 5.4.2 FIRST-ORDER CONTRIBUTION
TO STRESS AND STRAIN 220 5.4.3 LINEAR STABILITY ANALYSIS 222 5.4.4
RESULTS AND DISCUSSION 224 5.5 CONCLUSION 227
REFERENCES 127
6 STRAINED SILICON NANODEVICES 232 MANFRED REICHE, OUSSAMA MOUTANABBIR,
JAN HOENTSCHEL, ANGELIKA HAEHNEL, STEFAN FLACHOWSKY, ULRICH COESELE, AND
MANFRED HORSTMANN 6.1 INTRODUCTION 231
6.2 IMPACT OF STRAIN ON THE ELECTRONIC PROPERTIES OF SILICON 232 6.3
METHODS TO GENERATE STRAIN IN SILICON DEVICES 235 6.3.1 SUBSTRATES FOR
NANOSCALE CMOS TECHNOLOGIES 235
6.3.2 LOCAL STRAIN 236
6.3.3 GLOBAL STRAIN 239
6.3.3.1 BIAXIALLY STRAINED LAYERS 139 6.3.3.2 UNIAXIALLY STRAINED LAYERS
242 6.4 STRAIN ENGINEERING FOR 22 NM CMOS TECHNOLOGIES AND BELOW 242 6.5
CONDUSIONS 246
REFERENCES 246
7 STRESS-DRIVEN NANOPATTERNING IN METALLIC SYSTEMS 252 VINCENT REPAIN,
SYLVIE ROUSSET, AND SHOBHANA NARASIMHAN 7.1 INTRODUCTION 252
7.2 SURFACE STRESS AS A DRIVING FORCE FOR PATTERNING AT NANOMETER LENGTH
SCALES 252 7.2.1 SURFACE STRESS 152
7.2.2 SURFACE RECONSTRUCTION AND MISFIT DISLOCATIONS 253 7.2.2.1
HOMOEPITAXIAL SURFACES 253 7.2.2.2 HETEROEPITAXIAL SYSTEMS 255 7.2.3
STRESS DOMAINS 256
IMAGE 5
CONTENTS IX
7.2.4 VICINAL SURFACES 257
7.3 NANOPATTERNED SURFACES AS TEMPLATES FOR THE ORDERED GROWTH OF
FUNCTIONALIZED NANOSTRUCTURES 258 7.3.1 METALLIC ORDERED GROWTH ON
NANOPATTERNED SURFACE 158 7.3.1.1 INTRODUCTION 158 7.3.1.2 NUDEATION AND
GROWTH CONCEPTS 159 7.3.1.3 HETEROGENEOUS GROWTH 260 7.4 STRESS
RELAXATION BY THE FORMATION OF SURFACE-CONFINED
ALLOYS 262
7.4.1 TWO-COMPONENT SYSTEMS 262 7.4.2 THREE-COMPONENT SYSTEMS 262 7.5
CONCLUSION 264
REFERENCES 265
8 SEMICONDUCTOR TEMPLATES FOR THE FABRICATION OF NANO-OBJECTS 269 JOEL
EYMERY, LAURENCE MASSON, HOUDA SAHAF AND MARGRIT HANBUECKEN 8.1
INTRODUCTION 269
8.2 SEMICONDUCTOR TEMPLATE FABRICATION 270 8.2.1 ARTIFICIALLY
PREPATTERNED SUBSTRATES 170 8.2.1.1 MORPHOLOGICAL PATTERNING 270 8.2.1.2
SILICON ETCHED STRIPES: EXAMPLE OF THE USE OF STRAIN TO
CONTROL NANOSTRUCTURE FORMATION AND PHYSICAL PROPERTIES 272 8.2.1.3 USE
OF BURIED STRESSORS 172 8.2.2 PATTERNING THROUGH VICINAL SURFACES 173
8.2.2.1 GENERALITIES 173 8.2.2.2 VICINAL SI(LLL) 173 8.2.2.3 VICINAL
SI(100) 173 8.3 ORDERED GROWTH OF NANO-OBJECTS 275 8.3.1 GROWTH MODES
AND SELF-ORGANIZATION 175 8.3.2 QUANTUM DOTS AND NANOPARTIDES
SELF-ORGANIZATION WITH CONTROL IN SIZE AND POSITION 276 8.3.2.1
STRANSKI-KRASTANOV GROWTH MODE 176 8.3.2.2 AU/SI(LLL) SYSTEM 177 8.3.2.3
GE/SI(001) SYSTEM 179 8.3.3 WIRES: CATALYTIC AND CATALYST-FREE GROWTHS
WITH CONTROL IN SIZE AND POSITION 179 8.3.3.1 STRAIN IN BOTTOM-UP WIRE
HETEROSTRUCTURES: LONGITUDINAL AND RADIAL HETEROSTRUCTURES 182 8.3.3.2
WIRES AS A POSITION CONTROLLED TEMPLATE 183 8.4 CONDUSIONS 284
REFERENCES 284
IMAGE 6
X CONTENTS
PART THREE CHARACTERIZATION TECHNIQUES OF MEASURING STRESSES ON
THE NANOSCALE 189
9 STRAIN ANALYSIS IN TRANSMISSION ELECTRON MICROSCOPY:
HOW FAR CAN WE GO? 292 ANNE PONCHET, CHRISTOPHE CATEL, CHRISTIAN ROUCAU,
AND MARIE-JOSE CASANOVE 9.1 INTRODUCTION: HOW TO GET QUANTITATIVE
INFORMATION ON
STRAIN FROM TEM 292 9.1.1 DISPLACEMENT, STRAIN, AND STRESS IN ELASTIDTY
THEORY 292 9.1.2 PRINDPLES OF TEM AND APPLICATION TO STRAINED
NANOSYSTEMS 192
9.1.3 A MAJOR ISSUE FOR STRAINED NANOSTRUCTURE ANALYSIS: THE THIN FOIL
EFFECT 2 93 9.2 BENDING EFFECTS IN NANOMETRIC STRAINED LAYERS: A TOOL
FOR PROBING STRESS 294
9.2.1 BENDING: A RELAXATION MECHANISM 294 9.2.2 RELATION BETWEEN
CURVATURE AND INTERNAL STRESS 295 9.2.3 USING THE BENDING AS A PROBE OF
THE EPITAXIAL STRESS: THE TEM CURVATURE METHOD 296
9.2.4 OCCURRENCE OF LARGE DISPLACEMENTS IN TEM THINNED SAMPLES 297 9.2.5
ADVANTAGES AND LIMITS OF BENDING AS A PROBE OF STRESS IN TEM 299 9.3
STRAIN ANALYSIS AND SURFACE RELAXATION IN ELECTRON
DIFFRACTION 299
9.3.1 CBED: PRINDPLE AND APPLICATION TO DETERMINATION OF LATTICE
PARAMETERS 199 9.3.2 STRAIN DETERMINATION IN CBED 202 9.3.3 USE AND
LIMITATIONS OF CBED IN STRAIN DETERMINATION 202 9.3.4 NANOBEAM ELECTRON
DIFFRACTION 203 9.4 STRAIN ANALYSIS FROM HREM IMAGE ANALYSIS:
PROBLEMATIC
OF VERY THIN FOILS 203 9.4.1 PRINCIPLE 203
9.4.2 WHAT DO WE REALLY MEASURE IN AN HREM IMAGE? 205 9.4.2.1 IMAGE
FORMATION 205 9.4.2.2 RECONSTRUCTION OF THE 3D STRAIN FIELD FROM A 2D
PROJECTION 205 9.4.3 MODELING THE SURFACE RELAXATION IN AN HREM
EXPERIMENT 206 9.4.3.1 FULL RELAXATION (UNIAXIAL STRESS) 206 9.4.3.2
INTERMEDIATE SITUATIONS: USEFULNESS OF FINITE ELEMENT MODELING 207
9.4.3.3 THIN FOIL EFFECT: A SOURCE OF INCERTITUDE IN HREM 207 9.4.4
CONDUSION: HREM IS A POWERFUL BUT DELICATE METHOD
OF STRAIN ANALYSIS 208 9.5 CONDUSIONS 209
REFERENCES 220
IMAGE 7
CONTENTS XI
10 DETERMINATION OF ELASTIC STRAINS USING ELECTRON BACKSCATTER
DIFFRACTION IN THE SCANNING ELECTRON MICROSCOPE 223 MICHAEL KRAUSE,
MATTHIAS PETZOLD, AND RALFB. WEHRSPOHN 10.1 INTRODUCTION 223
10.2 GENERATION OF ELECTRON BACKSCATTER DIFFRACTION PATTERNS 224 10.3
STRAIN DETERMINATION THROUGH LATTICE PARAMETER MEASUREMENT 225 10.4
STRAIN DETERMINATION THROUGH PATTERN SHIFT MEASUREMENT 216 10.4.1
LINKING PATTERN SHIFTS TO STRAIN 216 10.4.2 MEASUREMENT OF PATTERN
SHIFTS 219 10.5 SAMPLING STRATEGIES: SOURCES OF ERRORS 222 10.6
RESOLUTION CONSIDERATIONS 222 10.7 ILLUSTRATIVE APPLICATION 225 10.8
CONDUSIONS 229
REFERENCES 230
11 X-RAY DIFFRACTION ANALYSIS OF ELASTIC STRAINS AT THE NANOSCALE 233
OLIVIER THOMAS, ODILE ROBACH, STEPHANIE ESCOUBAS, JEAN-SEBASTIEN MICHA,
NICOLAS VAXELAIRE, AND OLIVIER PERROUD 11.1 INTRODUCTION 233
11.2 STRAIN FIELD FROM INTENSITY MAPS AROUND BRAGG PEAKS 234 11.3
AVERAGE STRAINS FROM DIFFRACTION PEAK SHIFT 236 11.4 LOCAL STRAINS USING
SUBMICROMETER BEAMS AND SCANNING XRD 240 11.4.1 INTRODUCTION 240 11.4.2
HIGH-ENERGY MONOCHROMATIC BEAM: 3DXRD 241 11.4.3 WHITE BEAM: LAUE
MICRODIFFRACTION 243 11.5 LOCAL STRAINS DERIVED FROM THE INTENSITY
DISTRIBUTION IN
RECIPROCAL SPACE 248 11.5.1 PERIODIC ASSEMBLIES OF IDENTICAL OBJECTS
WITH COHERENCE LENGTH FEW PERIODS 248 11.5.1.1 INTRODUCTION 248
11.5.1.2 RECIPROCAL SPACE MAPPING 249 11.5.1.3 APPLICATIONS 251 11.5.2
SINGLE-OBJECT COHERENT DIFFRACTION 252 11.6 PHASE RETRIEVAL FROM
STRAINED CRYSTALS 254 11.7 CONDUSIONS AND PERSPECTIVES 255
REFERENCES 256
12 DIFFUSE X-RAY SCATTERING AT LOW-DIMENSIONAL STRUCTURES IN THE SYSTEM
SIGE/SI 259 MICHAEL HANKE 12.1 INTRODUCTION 259
12.2 SELF-ORGANIZED GROWTH OF MESOSCOPIC STRUCTURES 259 12.2.1 THE
STRANSKI-KRASTANOW PROCESS 260 12.2.2 LPE-GROWN SI!_ X GE X /SI(001)
ISLANDS 261
IMAGE 8
XII CONTENTS
12.3 X-RAY SCATTERING TECHNIQUES 262
12.3.1 HIGH-RESOLUTION X-RAY DIFFRACTION 262 12.3.2 GRAZING INCIDENCE
DIFFRACTION 263 12.3.3 GRAZING INCIDENCE SMALL-ANGLE X-RAY SCATTERING
264 12.4 DATA EVALUATION 265
12.5 RESULTS 266
12.5.1 THE INFLUENCE OF SHAPE AND SIZE ON THE GISAXS SIGNAL 266 12.5.2
HRXRD MEASUREMENT OF STRAIN AND COMPOSITION 269 12.5.3 POSITIONAL
CORRELATION EFFECTS IN HRXRD 270 12.5.4 ISO-STRAIN SCATTERING 272
12.6 SUMMARY 273
REFERENCES 274
13 DIRECT MEASUREMENT OF ELASTIC DISPLACEMENT MODES BY GRAZING INCIDENCE
X-RAY DIFFRACTION 275 GEOFFROY PREVOT 13.1 INTRODUCTION 275
13.2 ELASTIC DISPLACEMENT MODES: ANALYSIS AND GIXD OBSERVATION 276
13.2.1 FUNDAMENTALS OF LINEAR ELASTIDTY IN DIRECT SPACE 276 13.2.1.1
BASIC EQUATIONS 276 13.2.1.2 ATOMIC DISPLACEMENTS AND ELASTIC
INTERACTIONS 277 13.2.2 GREEN S TENSOR IN RECIPROCAL SPACE 279 13.2.3
GRAZING INCIDENCE X-RAY DIFFRACTION OF ELASTIC MODES 280 13.2.3.1
DIFFRACTION BY A SURFACE 280 13.2.3.2 CONTRIBUTION OF THE ELASTIC MODES
280 13.2.3.3 PROCEDURE FOR ANALYZING THE SYSTEMS 281 13.3 SELF-ORGANIZED
SURFACES 282 13.3.1 FORCE DISTRIBUTION AND INTERACTION ENERGY FOR
SELF-ORGANIZED
SURFACES 282
13.3.2 A ID CASE: OCU(LLO) 283 13.3.3 A 2D CASE: NCU(OOL) 286 13.4
VIRINAL SURFACES 289
13.4.1 FORCE DISTRIBUTION AND INTERACTION ENERGY FOR STEPS 289 13.4.2
EXPERIMENTAL RESULTS FOR VICINAL SURFACES OF TRANSITION METALS 292 13.5
CONDUSION 294
REFERENCES 295
14 SUBMICROMETER-SCALE CHARACTERIZATION OF SOLAR SILICON BY RAMAN
SPECTROSCOPY 299 MICHAEL BECKER, GEORGE SARAU, AND SILKE CHRISTIANSEN
14.1 INTRODUCTION 299
14.2 CRYSTAL ORIENTATION 300
14.2.1 QUALITATIVE MAPS 300 14.2.2 QUANTITATIVE ANALYSIS 302
IMAGE 9
CONTENTS XIII
14.2.3 COMPARISON WITH OTHER ORIENTATION MEASUREMENT
METHODS 306
14.3 ANALYSIS OF STRESS AND STRAIN STATES 307 14.3.1 GENERAL THEORETICAL
DESCRIPTION 307 14.3.2 QUANTITATIVE STRAIN/STRESS ANALYSIS IN
POLYCRYSTALLINE SILICON WAFERS 309
14.3.2.1 ASSUMPTIONS 309 14.3.2.2 NUMERICAL DETERMINATION OF STRESS
COMPONENTS 310 14.3.3 EXPERIMENTAL PROCEDURE TO DETERMINE PHONON
FREQUENCY SHIFTS 311 14.3.4 ADDITIONAL INFLUENCES ON THE PHONON
FREQUENCY SHIFTS 312 14.3.4.1 TEMPERATURE 322 14.3.4.2 DRIFT OF THE
SPECTROMETER GRATING 323 14.3.5 APPLICATIONS 313
14.3.5.1 MECHANICAL STRESSES AT THE BACKSIDE OF SILICON SOLAR CELLS 313
14.3.5.2 STRESS FIELDS AT MICROCRACKS IN POLYCRYSTALLINE SILICON WAFERS
315 14.3.5.3 STRESS STATES AT GRAIN BOUNDARIES IN POLYCRYSTALLINE
SILICON SOLAR CELL MATERIAL AND THE RELATION TO THE GRAIN BOUNDARY
MICROSTRUCTURE AND ELECTRICAL ACTIVITY 326 14.3.6 COMPARISON WITH OTHER
STRESS/STRAIN MEASUREMENT METHODS 318 14.4 MEASUREMENT OF FREE CARRIER
CONCENTRATIONS 328 14.4.1 THEORETICAL DESCRIPTION 329
14.4.2 EXPERIMENTAL DETAILS 322 14.4.2.1 SMALL-ANGLE BEVELING AND
NOMARSKI DIFFERENTIAL INTERFERENCE CONTRAST MICROGRAPHS 321 14.4.2.2
EVALUATION OF THE RAMAN DATA 322 14.4.2.3 CALIBRATION MEASUREMENTS 324
14.4.3 EXPERIMENTAL RESULTS 324 14.4.4 COMPARISON WITH OTHER DOPANT
MEASUREMENT METHODS 328 14.5 CONCLUDING REMARKS 328
REFERENCES 329
15 STRAIN-INDUCED NONLINEAR OPTICS IN SILICON 333 CLEMENS SCHRIEVER,
CHRISTIAN BOHLEY, AND RALFB. WEHRSPOHN 15.1 INTRODUCTION 333
15.2 FUNDAMENTALS OF SECOND HARMONIC GENERATION IN NONLINEAR OPTICAL
MATERIALS 334 15.3 SECOND HARMONIC GENERATION AND ITS RELATION TO
STRUCTURAL SYMMETRY 336 15.3.1 SOURCES OF SECOND HARMONIC SIGNALS 337
15.3.2 BULK CONTRIBUTION TO SECOND HARMONIC GENERATION 338 15.3.3
SURFACE CONTRIBUTION TO SECOND HARMONIC GENERATION 341
15.4 STRAIN-INDUCED MODIFICATION OF SECOND-ORDER NONLINEAR
SUSCEPTIBILITY IN SILICON 343
IMAGE 10
XIV CONTENTS
15.5 STRAINED SILICON IN INTEGRATED OPTICS 348
15.5.1 STRAIN-INDUCED ELECTRO-OPTICAL EFFECT 348 15.5.2 STRAIN-INDUCED
PHOTOELASTIC EFFECT 350 15.6 CONDUSIONS 352
REFERENCES 353
INDEX 357
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| bvnumber | BV039702989 |
| classification_rvk | VE 9850 ZN 3700 |
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| discipline | Chemie / Pharmazie Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Book |
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| genre | (DE-588)4143413-4 Aufsatzsammlung gnd-content |
| genre_facet | Aufsatzsammlung |
| id | DE-604.BV039702989 |
| illustrated | Illustrated |
| indexdate | 2024-07-10T00:09:20Z |
| institution | BVB |
| isbn | 9783527410668 9783527639540 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-024551483 |
| oclc_num | 756384379 |
| open_access_boolean | |
| owner | DE-11 DE-703 DE-19 DE-BY-UBM DE-29T |
| owner_facet | DE-11 DE-703 DE-19 DE-BY-UBM DE-29T |
| physical | XXI, 358 S. Ill., graph. Darst. 24 cm |
| publishDate | 2011 |
| publishDateSearch | 2011 |
| publishDateSort | 2011 |
| publisher | Wiley-VCH |
| record_format | marc |
| spelling | Mechanical stress on the nanoscale simulation, material systems and characterization techniques ed. by Margrit Hanbücken, Pierre Müller and Ralf B. Wehrspohn Weinheim Wiley-VCH 2011 XXI, 358 S. Ill., graph. Darst. 24 cm txt rdacontent n rdamedia nc rdacarrier Mechanische Spannung (DE-588)4134428-5 gnd rswk-swf Nanostruktur (DE-588)4204530-7 gnd rswk-swf Semiconductors / Defects Semiconductors / Reliability (DE-588)4143413-4 Aufsatzsammlung gnd-content Nanostruktur (DE-588)4204530-7 s Mechanische Spannung (DE-588)4134428-5 s DE-604 Hanbücken, Margrit Sonstige oth Müller, Pierre Sonstige oth Wehrspohn, Ralf B. 1970- Sonstige (DE-588)115845763 oth Erscheint auch als Online-Ausgabe, EPUB 978-3-527-63955-7 Erscheint auch als Online-Ausgabe, PDF 978-3-527-63956-4 DNB Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=024551483&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Mechanical stress on the nanoscale simulation, material systems and characterization techniques Mechanische Spannung (DE-588)4134428-5 gnd Nanostruktur (DE-588)4204530-7 gnd |
| subject_GND | (DE-588)4134428-5 (DE-588)4204530-7 (DE-588)4143413-4 |
| title | Mechanical stress on the nanoscale simulation, material systems and characterization techniques |
| title_auth | Mechanical stress on the nanoscale simulation, material systems and characterization techniques |
| title_exact_search | Mechanical stress on the nanoscale simulation, material systems and characterization techniques |
| title_full | Mechanical stress on the nanoscale simulation, material systems and characterization techniques ed. by Margrit Hanbücken, Pierre Müller and Ralf B. Wehrspohn |
| title_fullStr | Mechanical stress on the nanoscale simulation, material systems and characterization techniques ed. by Margrit Hanbücken, Pierre Müller and Ralf B. Wehrspohn |
| title_full_unstemmed | Mechanical stress on the nanoscale simulation, material systems and characterization techniques ed. by Margrit Hanbücken, Pierre Müller and Ralf B. Wehrspohn |
| title_short | Mechanical stress on the nanoscale |
| title_sort | mechanical stress on the nanoscale simulation material systems and characterization techniques |
| title_sub | simulation, material systems and characterization techniques |
| topic | Mechanische Spannung (DE-588)4134428-5 gnd Nanostruktur (DE-588)4204530-7 gnd |
| topic_facet | Mechanische Spannung Nanostruktur Aufsatzsammlung |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=024551483&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
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