Copper zinc tin sulfide thin films for photovoltaics: synthesis and characterisation by electrochemical methods
Gespeichert in:
| 1. Verfasser: | |
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| Format: | Abschlussarbeit Buch |
| Sprache: | English |
| Veröffentlicht: |
Berlin [u.a.]
Springer
2011
|
| Schriftenreihe: | Springer theses
|
| Schlagworte: | |
| Online-Zugang: | Inhaltstext Inhaltsverzeichnis |
| Beschreibung: | XX, 204 S. Ill., graph. Darst. |
| ISBN: | 9783642229183 |
Internformat
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| 245 | 1 | 0 | |a Copper zinc tin sulfide thin films for photovoltaics |b synthesis and characterisation by electrochemical methods |c Jonathan J. Scragg |
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IMAGE 1
CONTENTS
1 INTRODUCTION 1
1.1 THIN FILM PHOTOVOLTAICS 1
1.2 CZTS: PROPERTIES, HISTORY AND DEVICE EFFICIENCIES 2
1.3 FABRICATION PROCESSES FOR THIN FILM MATERIALS 3
1.4 ELECTRODEPOSITION FOR CZTS PRECURSOR PRODUCTION 4
1.5 SULFURISATION OF CZTS PRECURSORS 4
1.6 MEASURING THE OPTO-ELECTRONIC PROPERTIES OF CZTS FILMS 5 1.7 THE
OBJECTIVES OF THIS INVESTIGATION 6
1.8 THE STRUCTURE OF THIS REPORT 6
REFERENCES 7
2 ELECTRODEPOSITION OF METALLIC PRECURSORS 9
BACKGROUND 9
2.1 ELECTROCHEMICAL DEPOSITION (ELECTRODEPOSITION) 9
2.1.1 THE ELECTROCHEMICAL CELL AND THE DEPOSITION REACTION 9
2.1.2 THE THREE-ELECTRODE CELL 11
2.1.3 CYCLIC VOLTAMMETRY IN ELECTRODEPOSITION 12
2.1.4 THE HYDROGEN EVOLUTION REACTION 14
2.1.5 ELECTRODEPOSITION AT CONSTANT POTENTIAL 17
2.2 EXPERIMENTAL APPROACHES FOR CU 2 ZNSNS 4 PRECURSOR PRODUCTION 19
2.2.1 CO-DEPOSITION AND THE SEL APPROACH 19
2.2.2 MORPHOLOGICAL CONTROL IN ELECTRODEPOSITION 21 2.2.3 MASS TRANSPORT
CONTROL IN ELECTRODEPOSITION 21 2.3 ELECTRODEPOSITION OF CU, SN AND ZN
23
2.3.1 ELECTRODEPOSITION OF CU 23
2.3.2 ELECTRODEPOSITION OF SN 24
2.3.3 ELECTRODEPOSITION OF ZN 24
EXPERIMENTAL 25
BIBLIOGRAFISCHE INFORMATIONEN HTTP://D-NB.INFO/1013326903
DIGITALISIERT DURCH
IMAGE 2
CONTENTS
2.4 DESCRIPTION OF ELECTRODEPOSITION METHODOLOGY 25
2.4.1 SUBSTRATES 25
2.4.2 ELECTROLYTES 25
2.4.3 ELECTROCHEMICAL SETUP 25
2.4.4 CYCLIC VOLTAMMETRY 25
2.4.5 DEPOSITION PROCEDURE AT VERTICAL WORKING ELECTRODES 27
2.4.6 DEPOSITION PROCEDURE AT THE ROTATING DISC ELECTRODE 27
2.5 CHARACTERIZATION OF ELECTRODEPOSITED FILMS 29
RESULTS AND DISCUSSION 29
2.6 ELECTRODEPOSITION OF CU 30
2.6.1 SUBSTRATE CONSIDERATIONS 30
2.6.2 CYCLIC VOLTAMMETRY OF THE ALKALINE SORBITOL ELECTROLYTE FOR CU 31
2.6.3 MORPHOLOGY OF ELECTRODEPOSITS 33
2.7 ELECTRODEPOSITION OF SN: THE METHANE SULFONIC ACID ELECTROLYTE 33
2.7.1 SUBSTRATES 34
2.7.2 CYCLIC VOLTAMMETRY 34
2.7.3 MORPHOLOGY OF ELECTRODEPOSITS 35
2.8 ELECTRODEPOSITION OF ZN FROM AN ACID CHLORIDE ELECTROLYTE. 36
2.8.1 SUBSTRATES 36
2.8.2 CYCLIC VOLTAMMETRY OF THE ACID CHLORIDE ELECTROLYTE FOR ZN 36
2.8.3 MORPHOLOGY OF ZN ELECTRODEPOSITS 37
2.8.4 UNDERSTANDING THE DIFFERENCE IN ZN DEPOSITION AT CU AND SN
SUBSTRATES 38
2.8.5 ENABLING ZN DEPOSITION BY ADDING A SECOND CU LAYER 39
2.9 ACHIEVING MACROSCOPIC UNIFORMITY IN THE PRECURSOR 41 2.9.1 ISSUES
WITH ELECTRODEPOSITION AT VERTICAL WORKING ELECTRODES 41
2.10 ELECTRODEPOSITION AT THE ROTATING DISC ELECTRODE 42
2.10.1 INFLUENCE OF FORCED CONVECTION ON THE CYCLIC VOLTAMMETRY 42
2.10.2 UNIFORMITY OF FILMS DEPOSITED USING THE RDE 43 2.11 FINALISED
DEPOSITION CONDITIONS FOR PRECURSOR STACKS 45 2.11.1 EFFICIENCY OF
ELECTRODEPOSITION STEPS 47
2.11.2 DESIGN OF PRECURSOR THICKNESS AND COMPOSITION 50 2.11.3
APPLICATION OF EQ. 2.32 IN PRECURSOR DESIGN 52
2.12 CHARACTERISATION OF A COMPLETE CULSNICULZN STACK 53 CONCLUSIONS 55
REFERENCES 56
IMAGE 3
CONTENTS XIII
3 CONVERSION OF PRECURSORS INTO COMPOUND SEMICONDUCTORS 59 BACKGROUND 59
3.1 ALLOYING OF PRECURSORS 59
3.1.1 THE CU-ZN SYSTEM 60
3.1.2 ALLOYING OF CU AND SN 61
3.1.3 ALLOYING OF SN AND ZN 62
3.1.4 THE CU-SN-ZN TERNARY SYSTEM 62
3.2 INCORPORATION OF SULFUR: THE CU-ZN-SN-S SYSTEM 64
3.2.1 THE REPRESENTATION OF SAMPLE COMPOSITIONS 64 3.2.2 PHASES IN THE
CU 2 S-ZNS-SNS 2 PSEUDO-TERNARY SYSTEM 65
3.3 DISTINGUISHING PHASES IN THE CU-ZN-SN-S SYSTEM 67
3.3.1 X-RAY DIFFRACTION 67
3.3.2 RAMAN SPECTROSCOPY 68
3.3.3 OTHER METHODS OF DISTINGUISHING PHASES 69
3.4 CRYSTAL STRUCTURES OF CU 2 ZNSNS 4 70
3.4.1 KESTERITE AND STANNITE 70
3.5 FORMATION REACTIONS OF CU 2 ZNSNS 4 71
3.6 RAPID THERMAL PROCESSING 72
3.6.1 DESCRIPTION OF THE RTP SYSTEM 73
3.6.2 SULFUR SOURCES IN THE TWO-STAGE PROCESS 73
EXPERIMENTAL 74
3.7 PRECURSOR PREPARATION 74
3.8 DESCRIPTION OF ANNEALING/SULFURISATION PROCEDURES 75 3.9
CHARACTERIZATION OF CONVERTED MATERIAL 76
3.10 ETCHING 76
RESULTS AND DISCUSSION 77
3.11 ANNEALING OF METAL STACKS IN THE ABSENCE OF SULFUR 77 3.11.1
ANNEALING CU-ZN BILAYERS 77
3.11.2 ANNEALING CU-SN BILAYERS 79
3.11.3 ANNEALING CU-SN-ZN FILMS 81
3.11.4 ANNEALING COMPLETE CULSNICULZN PRECURSORS 82 3.12 ANNEALING
PRECURSOR STACKS IN THE PRESENCE OF SULFUR 86 3.12.1 INCORPORATION OF
SULFUR INTO THE PRECURSOR 86
3.12.2 PHASE FORMATION AS A FUNCTION OF TEMPERATURE 88 3.12.3
DEVELOPMENT OF PHASES AS A FUNCTION OF TIME AT 500C 96
3.12.4 SURFACE SEGREGATION OF CU 2 S AND FORMATION OF VOIDS 97
3.12.5 THE PRESENCE OF LIQUID SN, THE ABSENCE OF SN X S Y . . . 100
IMAGE 4
XIV CONTENTS
3.13 PROPOSED MODEL FOR CZTS FORMATION WITH HIGH HEATING RATES 103
3.13.1 REACTION SEQUENCE AT 500-550C 103
CONCLUSIONS 106
REFERENCES 107
4 THE INFLUENCES OF SULFURISATION VARIABLES AND PRECURSOR COMPOSITION ON
THE DEVELOPMENT OF THE CZTS PHASE I LL
BACKGROUND I LL
4.1 THE EFFECTS OF SULFURISATION CONDITIONS ON FILM GROWTH I LL 4.1.1
SULFURISATION CONDITIONS IN THE LITERATURE I LL
4.1.2 ZN-LOSS DURING SULFURISATION 113
4.1.3 SNS-LOSS DURING SULFURISATION 113
4.2 THE EFFECTS OF PRECURSOR COMPOSITION ON FILM GROWTH 114 4.2.1 THE
EFFECT OF CU-CONTENT ON THE GROWTH OF CUINSE 2 AND CUINS 2 FILMS 114
4.2.2 OBSERVED EFFECTS OF CU-CONTENT ON THE GROWTH OF CZTS FILMS 115
EXPERIMENTAL 115
RESULTS AND DISCUSSION 117
4.3 EFFECTS OF SULFURISATION PRESSURE 117
4.3.1 THE BEHAVIOUR OF ELEMENTAL S IN THE SULFURISATION PROCESS 117
4.3.2 THE EFFECT OF SULFURISATION PRESSURE ON THE RATE OF SULFURISATION
122
4.3.3 THE EFFECT OF SULFURISATION PRESSURE ON GRAIN SIZE . . . 123 4.3.4
THE INFLUENCE OF SULFURISATION PRESSURE ON GRAIN ORIENTATION 123
4.3.5 THE EFFECT OF SULFURISATION PRESSURE ON COMPOSITION 126
4.4 THE EFFECTS OF SULFURISATION TIME 129
4.4.1 THE RESIDENCE TIME OF S VAPOUR 129
4.4.2 GRAIN GROWTH AT LONGER ANNEAL TIMES 131
4.4.3 ELEMENT LOSSES DURING SULFURISATION 132
4.5 THE EFFECTS OF CHANGING CU-CONTENT 133
4.5.1 EXPERIMENTAL APPROACH FOR COMPOSITIONAL MEASUREMENTS 133
4.5.2 PRECURSOR COMPOSITIONS FOR THE STUDY OF CU-CONTENT 133
4.5.3 COMPOSITIONS AND PHASE STRUCTURE OF SULFURISED SAMPLES 134
4.5.4 THE EFFECTS OF KCN ETCHING ON SAMPLES WITH VARIABLE CU-CONTENT 136
4.5.5 THE EFFECT OF CU CONTENT ON GRAIN SIZE 138
IMAGE 5
CONTENTS
4.6 SOME EFFECTS OF THE ZN/SN RATIO 141
4.7 MODIFICATIONS TO THE GROWTH MODEL FOR DEVIATIONS FROM STOICHIOMETRY
142
4.8 ANALYSIS OF ELEMENT LOSSES DURING SULFURISATION 143
4.8.1 INITIAL OBSERVATIONS ON SN-LOSS 143
4.8.2 THE EFFECT OF ELEMENT LOSS ON THE DISTRIBUTION OF SAMPLE
COMPOSITIONS 144
4.9 OBSERVATIONS ON GRAIN SIZE TRENDS 148
CONCLUSIONS 150
REFERENCES 152
OPTO-ELECTRONIC PROPERTIES OF CU 2 ZNSNS 4 FILMS: INFLUENCES OF GROWTH
CONDITIONS AND PRECURSOR COMPOSITION 155 BACKGROUND 155
5.1 CZTS MATERIAL PROPERTIES IN THE LITERATURE 155
5.1.1 THE BAND GAP OF CZTS 155
5.1.2 DEFECTS IN CUINSE 2 AND CZTS 156
5.1.3 THE EFFECTS OF SECONDARY PHASES ON OPTO-ELECTRONIC PROPERTIES 157
5.1.4 DEVICE COMPOSITIONS FOR CZTS 159
5.2 PHOTOELECTROCHEMICAL CHARACTERISATION TECHNIQUES 160 5.2.1 JUNCTION
FORMATION AT THE SEMICONDUCTOR-ELECTROLYTE INTERFACE 160
5.2.2 CHARGE CARRIER GENERATION IN SEMICONDUCTORS 163 5.2.3 CHARGE
CARRIER COLLECTION AND EXTERNAL QUANTUM EFFICIENCY 163
5.2.4 NON-RADIATIVE RECOMBINATION 165
5.2.5 DARK CURRENTS 166
5.2.6 MEASUREMENT OF EQE SPECTRA 166
5.2.7 CORRECTING FOR REFLECTION AND ABSORPTION BY THE ELECTROCHEMICAL
CELL 167
5.2.8 ANALYSIS OF EQE SPECTRA AND EQE-BIAS CURVES 169 EXPERIMENTAL 172
5.3 PHOTOELECTROCHEMICAL MEASUREMENTS 172
5.3.1 SAMPLE PREPARATION 172
5.3.2 THE PHOTOELECTROCHEMICAL CELL 172
5.3.3 PHOTOCURRENT UNDER LED ILLUMINATION 172
5.3.4 PHOTOCURRENT SPECTROSCOPY (MEASUREMENT OF EQE) . . . 173 5.3.5
HIGH-FREQUENCY MEASUREMENTS OF PHOTOCURRENT 173 5.3.6 CAPACITANCE-BIAS
MEASUREMENTS 173
RESULTS AND DISCUSSION 173
IMAGE 6
CONTENTS
5.4 DETERMINING CONDITIONS FOR PHOTOELECTROCHEMICAL MEASUREMENTS 174
5.4.1 PHOTOCURRENT-POTENTIAL MEASUREMENTS 174
5.4.2 THE EFFECT OF KCN ETCHING 175
5.5 THE EFFECT OF SULFURISATION TIME 176
5.5.1 EVOLUTION OF PHOTOCURRENT DENSITY WITH SULFURISATION TIME 176
5.5.2 THE EVOLUTION OF BAND GAP WITH SULFURISATION TIME 179
5.5.3 CHANGES IN THE SPACE CHARGE REGION WIDTH AND ACCEPTOR DENSITY 180
5.5.4 EXPLAINING THE CHANGE IN SHORT CIRCUIT CURRENT AS A FUNCTION OF
SULFURISATION TIME 181
5.6 THE EFFECT OF BACKGROUND PRESSURE DURING SULFURISATION 183 5.7 THE
EFFECT OF SULFURISATION TEMPERATURE 185
5.8 THE EFFECTS OF CU-CONTENT 185
5.9 OBSERVATIONS ON TRENDS IN THE BAND GAP OF CU 2 ZNSNS 4 FILMS 188
5.9.1 HYPOTHESIS A: A KESTERITE-STANNITE SOLID SOLUTION. . . 188 5.9.2
HYPOTHESIS B: A CU 2 ZNSNS 4 -CU 2 ZNSN 3 S 8 INTERACTION 191
CONCLUSIONS 193
REFERENCES 194
CONCLUSIONS AND RECOMMENDATIONS FOR FURTHER STUDIES 197 6.1 THE ROLE OF
SULFURISATION CONDITIONS 198
6.2 THE ROLE OF PRECURSOR COMPOSITION 199
6.3 RECOMMENDATIONS FOR FURTHER INVESTIGATION 203
REFERENCES 204 |
| any_adam_object | 1 |
| author | Scragg, Jonathan J. |
| author_facet | Scragg, Jonathan J. |
| author_role | aut |
| author_sort | Scragg, Jonathan J. |
| author_variant | j j s jj jjs |
| building | Verbundindex |
| bvnumber | BV039680654 |
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| dewey-full | 537.6226 |
| dewey-hundreds | 500 - Natural sciences and mathematics |
| dewey-ones | 537 - Electricity and electronics |
| dewey-raw | 537.6226 |
| dewey-search | 537.6226 |
| dewey-sort | 3537.6226 |
| dewey-tens | 530 - Physics |
| discipline | Chemie / Pharmazie Physik Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Thesis Book |
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| indexdate | 2024-07-21T00:14:46Z |
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| isbn | 9783642229183 |
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| publishDateSort | 2011 |
| publisher | Springer |
| record_format | marc |
| series2 | Springer theses |
| spelling | Scragg, Jonathan J. Verfasser aut Copper zinc tin sulfide thin films for photovoltaics synthesis and characterisation by electrochemical methods Jonathan J. Scragg Berlin [u.a.] Springer 2011 XX, 204 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Springer theses Zugl.: Bath, Univ., Diss. Dünne Schicht (DE-588)4136925-7 gnd rswk-swf Kupfersulfide (DE-588)4166169-2 gnd rswk-swf Quaternäre Verbindungen (DE-588)4176652-0 gnd rswk-swf Verbindungshalbleiter (DE-588)4062623-4 gnd rswk-swf (DE-588)4113937-9 Hochschulschrift gnd-content Verbindungshalbleiter (DE-588)4062623-4 s Quaternäre Verbindungen (DE-588)4176652-0 s Kupfersulfide (DE-588)4166169-2 s Dünne Schicht (DE-588)4136925-7 s DE-604 Erscheint auch als Online-Ausgabe 978-3-642-22919-0 X:MVB text/html http://deposit.dnb.de/cgi-bin/dokserv?id=3850519&prov=M&dok_var=1&dok_ext=htm Inhaltstext DNB Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=024529666&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Scragg, Jonathan J. Copper zinc tin sulfide thin films for photovoltaics synthesis and characterisation by electrochemical methods Dünne Schicht (DE-588)4136925-7 gnd Kupfersulfide (DE-588)4166169-2 gnd Quaternäre Verbindungen (DE-588)4176652-0 gnd Verbindungshalbleiter (DE-588)4062623-4 gnd |
| subject_GND | (DE-588)4136925-7 (DE-588)4166169-2 (DE-588)4176652-0 (DE-588)4062623-4 (DE-588)4113937-9 |
| title | Copper zinc tin sulfide thin films for photovoltaics synthesis and characterisation by electrochemical methods |
| title_auth | Copper zinc tin sulfide thin films for photovoltaics synthesis and characterisation by electrochemical methods |
| title_exact_search | Copper zinc tin sulfide thin films for photovoltaics synthesis and characterisation by electrochemical methods |
| title_full | Copper zinc tin sulfide thin films for photovoltaics synthesis and characterisation by electrochemical methods Jonathan J. Scragg |
| title_fullStr | Copper zinc tin sulfide thin films for photovoltaics synthesis and characterisation by electrochemical methods Jonathan J. Scragg |
| title_full_unstemmed | Copper zinc tin sulfide thin films for photovoltaics synthesis and characterisation by electrochemical methods Jonathan J. Scragg |
| title_short | Copper zinc tin sulfide thin films for photovoltaics |
| title_sort | copper zinc tin sulfide thin films for photovoltaics synthesis and characterisation by electrochemical methods |
| title_sub | synthesis and characterisation by electrochemical methods |
| topic | Dünne Schicht (DE-588)4136925-7 gnd Kupfersulfide (DE-588)4166169-2 gnd Quaternäre Verbindungen (DE-588)4176652-0 gnd Verbindungshalbleiter (DE-588)4062623-4 gnd |
| topic_facet | Dünne Schicht Kupfersulfide Quaternäre Verbindungen Verbindungshalbleiter Hochschulschrift |
| url | http://deposit.dnb.de/cgi-bin/dokserv?id=3850519&prov=M&dok_var=1&dok_ext=htm http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=024529666&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| work_keys_str_mv | AT scraggjonathanj copperzinctinsulfidethinfilmsforphotovoltaicssynthesisandcharacterisationbyelectrochemicalmethods |