Electronic properties of semiconductor interfaces: with 17 tables
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Buch |
| Sprache: | English |
| Veröffentlicht: |
Berlin [u.a.]
Springer
2010
|
| Ausgabe: | [Softcover version of the orig. hardcover ed. 2004] |
| Schriftenreihe: | Springer series in surface sciences
43 |
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | Literaturverz. S. 235 - 255 |
| Beschreibung: | XI, 263 S. graph. Darst. |
| ISBN: | 9783642057786 |
Internformat
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| 100 | 1 | |a Mönch, Winfried |e Verfasser |4 aut | |
| 245 | 1 | 0 | |a Electronic properties of semiconductor interfaces |b with 17 tables |c Winfried Mönch |
| 250 | |a [Softcover version of the orig. hardcover ed. 2004] | ||
| 264 | 1 | |a Berlin [u.a.] |b Springer |c 2010 | |
| 300 | |a XI, 263 S. |b graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 490 | 1 | |a Springer series in surface sciences |v 43 | |
| 490 | 0 | |a Physics and astronomy online library | |
| 500 | |a Literaturverz. S. 235 - 255 | ||
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Datensatz im Suchindex
| _version_ | 1804145640111865856 |
|---|---|
| adam_text | Contents
1.
Introduction
.....................................................................................................1
1.1 Metal-Semiconductor
Contacts
...............................................................1
1.1.1
Rectification
of
Metal-Semiconductor Contacts
..................... 1
1.1.2
Explanation of
Rectification
by Depletion Layers
...................4
1.1.3
Metal-Induced Gap States
........................................................7
1.1.4
Rules, Correlations, andModels
...............................................9
1.1.5
MIGS-and-Electronegativity Theory
......................................14
1.2
Semiconductor Heterostractures and the IFIGS Concept
......................18
2.
Depletion Layer
.............................................................................................21
2.1
The Schottky Barrier
..............................................................................21
2.2
Capacitance of Schottky Barriers
..........................................................25
2.3
Image-Force or Schottky Effect
.............................................................27
3.
Determination of Barrier Heights and Offsets
...........................................33
3.1
Current Transport across Schottky Contacts
.........................................33
3.2
Effective Barrier Height of Ideal Schottky Contacts
.............................38
3.3
Effective Richardson Constant
..............................................................39
3.4
I/V Characteristics of Real Schottky Contacts
.......................................42
3.5
Barrier Heights of Real Schottky Contacts
1:
I/V Characteristics
..... 47
3.6
Ballistic-Electron-Emission Microscopy
...............................................57
3.7
Barrier Heights of Real Schottky Contacts
2:
ВЕЕМ
/coii/Frip Characteristics
..............................................................61
3.8
Barrier Heights of Real Schottky Contacts
3:
Internal
Photoemission
Yield Spectroscopy
..........................................63
3.9
Core-Level
Photoemission
Spectroscopy
..............................................67
3.9.1
Chemical Shifts and Interface Band-Bending
Determination by
PES
.............................................................67
3.9.2
Growth Modes of Metals on Semiconductors
.........................70
3.10
Barrier Heights of Real Schottky Diodes
4:
XPS
..................................74
3.11
Metal-Induced Core-Level Shifts and the Intrinsic
Interface Electric-Dipole Layer
.............................................................75
3.12
Determination of Band Offsets at Heterostractures
...............................79
3.12.1
Internal
Photoemission
Yield Spectroscopy
...........................79
3.12.2
Core-Level
Х
-Ray
Photoemission
Spectroscopy
....................81
X
Contents
4.
Laterally Inhomogeneous Schottky Contacts
............................................83
4.1
Potential Distribution
.............................................................................
83
4.2
Current Transport in Schottky Contacts with One Circular Patch
........91
4.3
Current Transport in Schottky Contacts with Many Circular
Patches
...................................................................................................
93
4.4
Test of the Patch Concept with Modified Contacts
...............................97
4.5
W
and
ВЕЕМ
Test of the Patch Concept
.............................................98
4.6
Origin of Lateral Barrier-Height Inhomogeneities
..............................103
4.6.1
Natural or Intrinsic Nonuniformities
....................................103
4.6.2
Extrinsic Nonuniformities
.....................................................104
5.
The IFIGS-and-Electronegativity Theory
................................................107
5.1
Band-Structure Lineup and Electronegativity:
Λ
Chemical Approach
.........................................................................107
5.1.1
Barrier Heights of Schottky Contacts
...................................107
5.1.2
Interface Dipoles at Semiconductor Heterostractures
..........109
5.2
Barrier Heights and Interface Dipoles: A Phenomenological
Approach
.............................................................................................
Ш
5.3
Interface-Induced Gap States
...............................................................115
5.3.1
Metal-Induced Gap States
.....................................................115
5.3.2
Semiconductor Heterostractures
...........................................118
5.3.3
Valence-Band Offsets at Semiconductor Heterostructures...
119
5.4
Virtual Gap States: One-Dimensional Model
......................................119
5.5
Virtual Gap States: Three-Dimensional Model
...................................122
5.5.1
Mean-Value ¿-Points and the Dielectric Band Gap
..............122
5.5.2
Branch-Point Energy in the ViGS Continuum
......................125
5.5.3
Decay Length of the ViGS at their Branch Point
.................129
5.6
Slope Parameter of Barrier Heights
.....................................................131
6.
The MIGS-and-Electronegativity Concept: Experiment and Theory...
135
6.1
Schottky Contacts
................................................................................135
6.1.1
Introductory Remarks
...........................................................135
6.1.2
Silicon Schottky contacts
......................................................136
6.1.3
GaAs Schottky Contacts
.......................................................139
6.1.4
GaP Schottky Contacts
.........................................................140
6.1.5
GaN Schottky Contacts
.........................................................141
6.1.6
SiC Schottky Contacts
..........................................................142
6.1.7
ZnSe Schottky Contacts
........................................................146
6.1.8
Schottky Contacts on Layered Ga-Chalcogenides
...............146
6.1.9
CuInSe; Schottky Contacts
...................................................148
6.1.10
Schottky Contacts on Ternary III-V Alloys
.........................149
6.1.11
Metal-Insulator Contacts
......................................................155
6.1.12
Direct Observations of MIGS
...............................................159
6.2
Heterostructures
.......................................................... [60
6.2.1
Introductory Remarks
...........................................................160
6.2.2
Non-Polar Heterostractures
..................................................162
Contents
XI
6.2.3 Lattice-Matched
Ternary and Quaternary
III—
V Alloys
.......163
6.2.4 I-lII-Vh Chalcopyrites.........................................................168
6.2.5
Layered Semiconductors
.......................................................170
6.2.6
Metamorphic Heterostructures
..............................................172
6.2.7
Semiconductor-Insulator Interfaces
.....................................173
6.2.8
Langer-Heinrich Rule
..........................................................176
7.
First-Principles Calculations of Barrier Heights and Valence-
Band Offsets
................................................................................................181
7.1
Introductory Remarks
..........................................................................181
7.2
Schottky Barrier Heights
.....................................................................181
7.3
Valence-Band Off sets at Heterostructures
..........................................186
7.3.1
lsovalent and Lattice-Matched AlGaAs/GaAs
.....................186
7.3.2
SiC Hetcrostractures
.............................................................187
8.
Temperature and Pressure Effects
...........................................................189
8.1
Temperature Effects
............................................................................189
8.2
Pressure Effects
...................................................................................193
8.2.1
Schottky Barrier Heights
.......................................................193
8.2.2
Valence-Band Offsets
...........................................................196
8.3
Pseudomorphic Heterostructures
.........................................................197
9.
Barrier Heights and Extrinsic Interface Defects
.....................................203
9.1
Defect-Induced Changes of Barrier Heights
.......................................203
9.2
Application to p-GaPi
110)
Schottky Contacts
....................................206
9.3
Unified Defect Model
..........................................................................208
10.
Extrinsic Interface Dipoles
.........................................................................209
10.1
Interface Doping of Schottky Contacts
...............................................209
10.2
Interface Structure
...............................................................................214
10.2.1
Metal Si(l
11
H7x7) Contacts
..............................................214
10.2.2
Epitaxial Suicide Silicon Interfaces
......................................217
10.2.3
Polar Heterostructures
...........................................................224
11.
Ohmic Contacts
...........................................................................................227
Appendix
..............................................................................................................231
References
............................................................................................................235
Subject Index
.......................................................................................................257
|
| any_adam_object | 1 |
| author | Mönch, Winfried |
| author_facet | Mönch, Winfried |
| author_role | aut |
| author_sort | Mönch, Winfried |
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| ctrlnum | (OCoLC)729991847 (DE-599)BVBBV037350585 |
| discipline | Physik Elektrotechnik Elektrotechnik / Elektronik / Nachrichtentechnik |
| edition | [Softcover version of the orig. hardcover ed. 2004] |
| format | Book |
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| illustrated | Illustrated |
| indexdate | 2024-07-09T23:22:39Z |
| institution | BVB |
| isbn | 9783642057786 |
| language | English |
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| series | Springer series in surface sciences |
| series2 | Springer series in surface sciences Physics and astronomy online library |
| spelling | Mönch, Winfried Verfasser aut Electronic properties of semiconductor interfaces with 17 tables Winfried Mönch [Softcover version of the orig. hardcover ed. 2004] Berlin [u.a.] Springer 2010 XI, 263 S. graph. Darst. txt rdacontent n rdamedia nc rdacarrier Springer series in surface sciences 43 Physics and astronomy online library Literaturverz. S. 235 - 255 Metall-Halbleiter-Kontakt (DE-588)4169590-2 gnd rswk-swf Elektronische Eigenschaft (DE-588)4235053-0 gnd rswk-swf Halbleitergrenzfläche (DE-588)4158802-2 gnd rswk-swf Halbleitergrenzfläche (DE-588)4158802-2 s Elektronische Eigenschaft (DE-588)4235053-0 s DE-604 Metall-Halbleiter-Kontakt (DE-588)4169590-2 s Springer series in surface sciences 43 (DE-604)BV000600785 43 Digitalisierung UB Regensburg application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=022504069&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Mönch, Winfried Electronic properties of semiconductor interfaces with 17 tables Springer series in surface sciences Metall-Halbleiter-Kontakt (DE-588)4169590-2 gnd Elektronische Eigenschaft (DE-588)4235053-0 gnd Halbleitergrenzfläche (DE-588)4158802-2 gnd |
| subject_GND | (DE-588)4169590-2 (DE-588)4235053-0 (DE-588)4158802-2 |
| title | Electronic properties of semiconductor interfaces with 17 tables |
| title_auth | Electronic properties of semiconductor interfaces with 17 tables |
| title_exact_search | Electronic properties of semiconductor interfaces with 17 tables |
| title_full | Electronic properties of semiconductor interfaces with 17 tables Winfried Mönch |
| title_fullStr | Electronic properties of semiconductor interfaces with 17 tables Winfried Mönch |
| title_full_unstemmed | Electronic properties of semiconductor interfaces with 17 tables Winfried Mönch |
| title_short | Electronic properties of semiconductor interfaces |
| title_sort | electronic properties of semiconductor interfaces with 17 tables |
| title_sub | with 17 tables |
| topic | Metall-Halbleiter-Kontakt (DE-588)4169590-2 gnd Elektronische Eigenschaft (DE-588)4235053-0 gnd Halbleitergrenzfläche (DE-588)4158802-2 gnd |
| topic_facet | Metall-Halbleiter-Kontakt Elektronische Eigenschaft Halbleitergrenzfläche |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=022504069&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
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