Doping in III-V semiconductors:
Saved in:
| Main Author: | |
|---|---|
| Format: | Book |
| Language: | English |
| Published: |
Cambridge
Cambridge Univ. Press
2005
|
| Edition: | Digitally print., 1. paperback version |
| Series: | Cambridge studies in semiconductor physics and microelectronic engineering
1 |
| Subjects: | |
| Online Access: | Inhaltsverzeichnis Klappentext |
| Physical Description: | XXII, 606 S. graph. Darst. |
| ISBN: | 0521419190 9780521017848 |
Staff View
MARC
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| 100 | 1 | |a Schubert, E. Fred |e Verfasser |4 aut | |
| 245 | 1 | 0 | |a Doping in III-V semiconductors |c E. Fred Schubert |
| 250 | |a Digitally print., 1. paperback version | ||
| 264 | 1 | |a Cambridge |b Cambridge Univ. Press |c 2005 | |
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Record in the Search Index
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|---|---|
| adam_text | Contents
Foreword page
xi
Preface
xv
List of symbols
xviii
Introduction
1
1.
Shallow impurities
6
1.1
Hydrogenic impurities
6
1.2
Screening of impurity potentials
27
1.3
High doping effects
34
2.
Phenomenology of deep levels
54
2.1
General characteristics
55
2.2
Capture, emission, and recombination
60
2.3
Effects relating to experimental properties
67
3.
Semiconductor statistics
78
3.1
Density of continuum states
80
3.2
Classical and quantum statistics
94
3.3
Carrier concentrations
И8
3.4
Law of mass action
130
4.
Growth technologies
137
4.1
Molecular-beam epitaxy
137
4.2
Gas-source molecular-beam epitaxy
146
4.3
Chemical-beam epitaxy
149
4.4
Organometallic vapor-phase epitaxy
153
4.5
Vapor-phase epitaxy
161
5.
Doping with elemental sources
165
5.1
Doping techniques and calibration
165
5.2
Doping homogeneity and uniformity
177
5.3
Elemental dopants
181
Contents
6.
Gaseous doping sources
208
6.1
General considerations
209
6.2
Doping homogeneity and uniformity
213
6.3
Gaseous doping precursors
219
7.
Impurity characteristics
248
7.1
Doping incorporation during growth
249
7.2
Doping incorporation by implantation
262
7.3
Doping incorporation by diffusion
272
7.4
Amphotericity and
autocompensation
277
7.5
Maximum doping concentration
290
8.
Redistribution of impurities
306
8.1
Diffusion and brownian motion
307
8.2
Fickian diffusion
311
8.3
Diffusion mechanisms
316
8.4
Some specific impurities
325
8.5
Surface segregations and surface migration
337
8.6
Impurity-induced layer disordering
349
9.
Deep centers
354
9.1
DX-type centers
355
9.2
The EL2 defect
365
9.3
Hydrogen
374
9.4
Chromium, iron, and oxygen
384
9.5
Rare-earth impurities
390
10.
Doping in heterostructures, quantum wells, and superlattices
392
10.1
Selectively doped heterostructures
392
10.2
Doping aspects of selectively doped heterostructures
404
10.3
Doping superlattices
412
10.4
Impurities in quantum wells and quantum barriers
422
11.
Delta doping
433
11.1
Electronic structure
434
11.2
Growth, localization, and redistribution
446
11.3
Transport properties
458
11.4
Electronic devices
463
11.5
Optical devices
471
12.
Characterization techniques
482
12.1
Electronic characterization techniques
482
12.2
Optical characterization techniques
508
12.3
Chemical and structural characterization techniques
531
Appendix A
:
Properties of III-V semiconductors
541
Appendix B: Constants and conversions
545
References
546
Index
600
Paperback
Re-issue
This is the first book to
desaribe
thoroughly the many facets of doping in
compound semiconductors. Equal emphasis is given to the fundamental materials
physics and to the technological aspects of doping.
The author describes various doping techniques, including doping during
epitaxial ^owm, doping by implantation, and doping by diffusion. The key
characteristics of all dopants that have been employed in ili-V semiconductors
are discussed. In addition, general characteristics of dopants are analyzed,
including the electrical activity, saturation, amphotericity, autocompensatioa, and
maximum attainable dopant concentration. Redistribution effects are important in
semiconductor microstructures. Linear and non-linear diffusion, different
microscopic diffusion mechanisms, surface segregation, surface drift, surface
migration, impurity-induced disordering, and the respective physical driving
mechanisms are illustrated.
Topics related to basic impurity theory include the hydrogenic model for
shallow impurities, linear screening, density of states, classical and quantum
statistics, the taw of mass action, as well as many analytic approximations for the
Fermi-Dirac integral for three-, two- and one-dimensional systems. The timely
topic of highly doped semiconductors, including band tails, impurity bands,
bandgap
renormaiizaiion, the Matt transition, and the Bumstein-Moss shift, is
discussed as well.
Doping is essential in many semiconductor heterostructures including high-
mobility selectively doped heterostructures, quantum well and
«pantům
barrier
structures, doping superlattke structures, and
б
-doping
structures. Technologically
important deep levels are summarized, including Fe, Cr, and the DX-center, the
EL2 defect, and rare-earth impurities. The properties of deep levels are presented
phenomenoiogicaJJy, including emission, capture, Shockley-Read recombination,
the Poole-Frenkel effect, lattice relaxation, and other effects. The final chapter is
dedicated to the experimental characterization of impurities.
This book will be of interest to
graduale
students, researchers and development
engineers in the fields of eiectrtcal engineering, materials acknee, physics, and
chemistry working on semtcondactQfs. The book may also be used
«s a
tett
for
graduate courses in etoctrksl
engineering
and
materiate
«cieeoe.
|
| any_adam_object | 1 |
| author | Schubert, E. Fred |
| author_facet | Schubert, E. Fred |
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| discipline | Physik |
| edition | Digitally print., 1. paperback version |
| format | Book |
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| id | DE-604.BV037339307 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T23:22:25Z |
| institution | BVB |
| isbn | 0521419190 9780521017848 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-022493047 |
| oclc_num | 255758547 |
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| owner | DE-355 DE-BY-UBR |
| owner_facet | DE-355 DE-BY-UBR |
| physical | XXII, 606 S. graph. Darst. |
| publishDate | 2005 |
| publishDateSearch | 2005 |
| publishDateSort | 2005 |
| publisher | Cambridge Univ. Press |
| record_format | marc |
| series | Cambridge studies in semiconductor physics and microelectronic engineering |
| series2 | Cambridge studies in semiconductor physics and microelectronic engineering |
| spelling | Schubert, E. Fred Verfasser aut Doping in III-V semiconductors E. Fred Schubert Digitally print., 1. paperback version Cambridge Cambridge Univ. Press 2005 XXII, 606 S. graph. Darst. txt rdacontent n rdamedia nc rdacarrier Cambridge studies in semiconductor physics and microelectronic engineering 1 Semiconductor doping Dotierung (DE-588)4130672-7 gnd rswk-swf Drei-Fünf-Halbleiter (DE-588)4150649-2 gnd rswk-swf Drei-Fünf-Halbleiter (DE-588)4150649-2 s Dotierung (DE-588)4130672-7 s DE-604 Cambridge studies in semiconductor physics and microelectronic engineering 1 (DE-604)BV009142123 1 Digitalisierung UB Regensburg application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=022493047&sequence=000003&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis Digitalisierung UB Regensburg application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=022493047&sequence=000004&line_number=0002&func_code=DB_RECORDS&service_type=MEDIA Klappentext |
| spellingShingle | Schubert, E. Fred Doping in III-V semiconductors Cambridge studies in semiconductor physics and microelectronic engineering Semiconductor doping Dotierung (DE-588)4130672-7 gnd Drei-Fünf-Halbleiter (DE-588)4150649-2 gnd |
| subject_GND | (DE-588)4130672-7 (DE-588)4150649-2 |
| title | Doping in III-V semiconductors |
| title_auth | Doping in III-V semiconductors |
| title_exact_search | Doping in III-V semiconductors |
| title_full | Doping in III-V semiconductors E. Fred Schubert |
| title_fullStr | Doping in III-V semiconductors E. Fred Schubert |
| title_full_unstemmed | Doping in III-V semiconductors E. Fred Schubert |
| title_short | Doping in III-V semiconductors |
| title_sort | doping in iii v semiconductors |
| topic | Semiconductor doping Dotierung (DE-588)4130672-7 gnd Drei-Fünf-Halbleiter (DE-588)4150649-2 gnd |
| topic_facet | Semiconductor doping Dotierung Drei-Fünf-Halbleiter |
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