High dielectric constant materials: VLSI MOSFET applications ; with 31 tables
Saved in:
| Format: | Book |
|---|---|
| Language: | English |
| Published: |
Berlin [u.a.]
Springer
2010
|
| Series: | Springer series in advanced microelectronics
16 |
| Subjects: | |
| Item Description: | Literaturangaben |
| Physical Description: | XXIV, 710 S. Ill., graph. Darst. |
| ISBN: | 9783642059216 |
Staff View
MARC
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| 245 | 1 | 0 | |a High dielectric constant materials |b VLSI MOSFET applications ; with 31 tables |c H. R. Huff ... (eds.) |
| 264 | 1 | |a Berlin [u.a.] |b Springer |c 2010 | |
| 300 | |a XXIV, 710 S. |b Ill., graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
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| 490 | 1 | |a Springer series in advanced microelectronics |v 16 | |
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| genre_facet | Aufsatzsammlung |
| id | DE-604.BV037280746 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T22:55:10Z |
| institution | BVB |
| isbn | 9783642059216 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-021193552 |
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| physical | XXIV, 710 S. Ill., graph. Darst. |
| publishDate | 2010 |
| publishDateSearch | 2010 |
| publishDateSort | 2010 |
| publisher | Springer |
| record_format | marc |
| series | Springer series in advanced microelectronics |
| series2 | Springer series in advanced microelectronics |
| spelling | High dielectric constant materials VLSI MOSFET applications ; with 31 tables H. R. Huff ... (eds.) Berlin [u.a.] Springer 2010 XXIV, 710 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Springer series in advanced microelectronics 16 Literaturangaben MOS-FET (DE-588)4207266-9 gnd rswk-swf Gate Elektronik (DE-588)4269385-8 gnd rswk-swf Siliciumoxinitride (DE-588)4268721-4 gnd rswk-swf Siliciumdioxid (DE-588)4077447-8 gnd rswk-swf VLSI (DE-588)4117388-0 gnd rswk-swf Dielektrische Schicht (DE-588)4194257-7 gnd rswk-swf (DE-588)4143413-4 Aufsatzsammlung gnd-content VLSI (DE-588)4117388-0 s MOS-FET (DE-588)4207266-9 s Gate Elektronik (DE-588)4269385-8 s Siliciumdioxid (DE-588)4077447-8 s Dielektrische Schicht (DE-588)4194257-7 s DE-604 Siliciumoxinitride (DE-588)4268721-4 s Huff, Howard R. Sonstige (DE-588)129513075 oth Springer series in advanced microelectronics 16 (DE-604)BV012563021 16 |
| spellingShingle | High dielectric constant materials VLSI MOSFET applications ; with 31 tables Springer series in advanced microelectronics MOS-FET (DE-588)4207266-9 gnd Gate Elektronik (DE-588)4269385-8 gnd Siliciumoxinitride (DE-588)4268721-4 gnd Siliciumdioxid (DE-588)4077447-8 gnd VLSI (DE-588)4117388-0 gnd Dielektrische Schicht (DE-588)4194257-7 gnd |
| subject_GND | (DE-588)4207266-9 (DE-588)4269385-8 (DE-588)4268721-4 (DE-588)4077447-8 (DE-588)4117388-0 (DE-588)4194257-7 (DE-588)4143413-4 |
| title | High dielectric constant materials VLSI MOSFET applications ; with 31 tables |
| title_auth | High dielectric constant materials VLSI MOSFET applications ; with 31 tables |
| title_exact_search | High dielectric constant materials VLSI MOSFET applications ; with 31 tables |
| title_full | High dielectric constant materials VLSI MOSFET applications ; with 31 tables H. R. Huff ... (eds.) |
| title_fullStr | High dielectric constant materials VLSI MOSFET applications ; with 31 tables H. R. Huff ... (eds.) |
| title_full_unstemmed | High dielectric constant materials VLSI MOSFET applications ; with 31 tables H. R. Huff ... (eds.) |
| title_short | High dielectric constant materials |
| title_sort | high dielectric constant materials vlsi mosfet applications with 31 tables |
| title_sub | VLSI MOSFET applications ; with 31 tables |
| topic | MOS-FET (DE-588)4207266-9 gnd Gate Elektronik (DE-588)4269385-8 gnd Siliciumoxinitride (DE-588)4268721-4 gnd Siliciumdioxid (DE-588)4077447-8 gnd VLSI (DE-588)4117388-0 gnd Dielektrische Schicht (DE-588)4194257-7 gnd |
| topic_facet | MOS-FET Gate Elektronik Siliciumoxinitride Siliciumdioxid VLSI Dielektrische Schicht Aufsatzsammlung |
| volume_link | (DE-604)BV012563021 |
| work_keys_str_mv | AT huffhowardr highdielectricconstantmaterialsvlsimosfetapplicationswith31tables |