High dielectric constant materials: VLSI MOSFET applications ; with 31 tables
Gespeichert in:
| Format: | Buch |
|---|---|
| Sprache: | English |
| Veröffentlicht: |
Berlin [u.a.]
Springer
2010
|
| Schriftenreihe: | Springer series in advanced microelectronics
16 |
| Schlagworte: | |
| Beschreibung: | Literaturangaben |
| Beschreibung: | XXIV, 710 S. Ill., graph. Darst. |
| ISBN: | 9783642059216 |
Internformat
MARC
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| 020 | |a 9783642059216 |9 978-3-642-05921-6 | ||
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| 245 | 1 | 0 | |a High dielectric constant materials |b VLSI MOSFET applications ; with 31 tables |c H. R. Huff ... (eds.) |
| 264 | 1 | |a Berlin [u.a.] |b Springer |c 2010 | |
| 300 | |a XXIV, 710 S. |b Ill., graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 490 | 1 | |a Springer series in advanced microelectronics |v 16 | |
| 500 | |a Literaturangaben | ||
| 650 | 0 | 7 | |a MOS-FET |0 (DE-588)4207266-9 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Gate |g Elektronik |0 (DE-588)4269385-8 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Siliciumoxinitride |0 (DE-588)4268721-4 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Siliciumdioxid |0 (DE-588)4077447-8 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a VLSI |0 (DE-588)4117388-0 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Dielektrische Schicht |0 (DE-588)4194257-7 |2 gnd |9 rswk-swf |
| 655 | 7 | |0 (DE-588)4143413-4 |a Aufsatzsammlung |2 gnd-content | |
| 689 | 0 | 0 | |a VLSI |0 (DE-588)4117388-0 |D s |
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| 689 | 0 | 2 | |a Gate |g Elektronik |0 (DE-588)4269385-8 |D s |
| 689 | 0 | 3 | |a Siliciumdioxid |0 (DE-588)4077447-8 |D s |
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| 689 | 1 | 3 | |a Siliciumoxinitride |0 (DE-588)4268721-4 |D s |
| 689 | 1 | 4 | |a Dielektrische Schicht |0 (DE-588)4194257-7 |D s |
| 689 | 1 | |5 DE-604 | |
| 700 | 1 | |a Huff, Howard R. |e Sonstige |0 (DE-588)129513075 |4 oth | |
| 830 | 0 | |a Springer series in advanced microelectronics |v 16 |w (DE-604)BV012563021 |9 16 | |
| 999 | |a oai:aleph.bib-bvb.de:BVB01-021193552 | ||
Datensatz im Suchindex
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| author_GND | (DE-588)129513075 |
| building | Verbundindex |
| bvnumber | BV037280746 |
| classification_rvk | UX 2350 |
| ctrlnum | (OCoLC)917841222 (DE-599)BVBBV037280746 |
| discipline | Maschinenbau / Maschinenwesen Physik |
| format | Book |
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| genre_facet | Aufsatzsammlung |
| id | DE-604.BV037280746 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T22:55:10Z |
| institution | BVB |
| isbn | 9783642059216 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-021193552 |
| oclc_num | 917841222 |
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| owner_facet | DE-11 |
| physical | XXIV, 710 S. Ill., graph. Darst. |
| publishDate | 2010 |
| publishDateSearch | 2010 |
| publishDateSort | 2010 |
| publisher | Springer |
| record_format | marc |
| series | Springer series in advanced microelectronics |
| series2 | Springer series in advanced microelectronics |
| spelling | High dielectric constant materials VLSI MOSFET applications ; with 31 tables H. R. Huff ... (eds.) Berlin [u.a.] Springer 2010 XXIV, 710 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Springer series in advanced microelectronics 16 Literaturangaben MOS-FET (DE-588)4207266-9 gnd rswk-swf Gate Elektronik (DE-588)4269385-8 gnd rswk-swf Siliciumoxinitride (DE-588)4268721-4 gnd rswk-swf Siliciumdioxid (DE-588)4077447-8 gnd rswk-swf VLSI (DE-588)4117388-0 gnd rswk-swf Dielektrische Schicht (DE-588)4194257-7 gnd rswk-swf (DE-588)4143413-4 Aufsatzsammlung gnd-content VLSI (DE-588)4117388-0 s MOS-FET (DE-588)4207266-9 s Gate Elektronik (DE-588)4269385-8 s Siliciumdioxid (DE-588)4077447-8 s Dielektrische Schicht (DE-588)4194257-7 s DE-604 Siliciumoxinitride (DE-588)4268721-4 s Huff, Howard R. Sonstige (DE-588)129513075 oth Springer series in advanced microelectronics 16 (DE-604)BV012563021 16 |
| spellingShingle | High dielectric constant materials VLSI MOSFET applications ; with 31 tables Springer series in advanced microelectronics MOS-FET (DE-588)4207266-9 gnd Gate Elektronik (DE-588)4269385-8 gnd Siliciumoxinitride (DE-588)4268721-4 gnd Siliciumdioxid (DE-588)4077447-8 gnd VLSI (DE-588)4117388-0 gnd Dielektrische Schicht (DE-588)4194257-7 gnd |
| subject_GND | (DE-588)4207266-9 (DE-588)4269385-8 (DE-588)4268721-4 (DE-588)4077447-8 (DE-588)4117388-0 (DE-588)4194257-7 (DE-588)4143413-4 |
| title | High dielectric constant materials VLSI MOSFET applications ; with 31 tables |
| title_auth | High dielectric constant materials VLSI MOSFET applications ; with 31 tables |
| title_exact_search | High dielectric constant materials VLSI MOSFET applications ; with 31 tables |
| title_full | High dielectric constant materials VLSI MOSFET applications ; with 31 tables H. R. Huff ... (eds.) |
| title_fullStr | High dielectric constant materials VLSI MOSFET applications ; with 31 tables H. R. Huff ... (eds.) |
| title_full_unstemmed | High dielectric constant materials VLSI MOSFET applications ; with 31 tables H. R. Huff ... (eds.) |
| title_short | High dielectric constant materials |
| title_sort | high dielectric constant materials vlsi mosfet applications with 31 tables |
| title_sub | VLSI MOSFET applications ; with 31 tables |
| topic | MOS-FET (DE-588)4207266-9 gnd Gate Elektronik (DE-588)4269385-8 gnd Siliciumoxinitride (DE-588)4268721-4 gnd Siliciumdioxid (DE-588)4077447-8 gnd VLSI (DE-588)4117388-0 gnd Dielektrische Schicht (DE-588)4194257-7 gnd |
| topic_facet | MOS-FET Gate Elektronik Siliciumoxinitride Siliciumdioxid VLSI Dielektrische Schicht Aufsatzsammlung |
| volume_link | (DE-604)BV012563021 |
| work_keys_str_mv | AT huffhowardr highdielectricconstantmaterialsvlsimosfetapplicationswith31tables |