Shallow dopants in nanostructured and in isotopically engineered silicon:
Saved in:
| Main Author: | |
|---|---|
| Format: | Thesis Book |
| Language: | English |
| Published: |
Garching
Verein zur Förderung des Walter Schottky Inst. der Techn. Univ. München e.V.
2011
|
| Edition: | 1. Aufl. |
| Series: | Selected topics of semiconductor physics and technology
123 |
| Subjects: | |
| Physical Description: | VII, 185 S. Ill., graph. Darst. |
| ISBN: | 9783941650237 |
Staff View
MARC
| LEADER | 00000nam a2200000 cb4500 | ||
|---|---|---|---|
| 001 | BV037271970 | ||
| 003 | DE-604 | ||
| 005 | 20111121 | ||
| 007 | t | ||
| 008 | 110310s2011 ad|| m||| 00||| eng d | ||
| 020 | |a 9783941650237 |9 978-3-941650-23-7 | ||
| 035 | |a (OCoLC)711852543 | ||
| 035 | |a (DE-599)BVBBV037271970 | ||
| 040 | |a DE-604 |b ger |e rakwb | ||
| 041 | 0 | |a eng | |
| 049 | |a DE-91 |a DE-12 | ||
| 084 | |a PHY 690d |2 stub | ||
| 084 | |a PHY 696d |2 stub | ||
| 100 | 1 | |a Stegner, Andre Rainer |e Verfasser |0 (DE-588)143663968 |4 aut | |
| 245 | 1 | 0 | |a Shallow dopants in nanostructured and in isotopically engineered silicon |c Andre Rainer Stegner |
| 250 | |a 1. Aufl. | ||
| 264 | 1 | |a Garching |b Verein zur Förderung des Walter Schottky Inst. der Techn. Univ. München e.V. |c 2011 | |
| 300 | |a VII, 185 S. |b Ill., graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 490 | 1 | |a Selected topics of semiconductor physics and technology |v 123 | |
| 502 | |a Zugl.: München, Techn. Univ., Diss., 2010 | ||
| 650 | 0 | 7 | |a Siliciumhalbleiter |0 (DE-588)4274465-9 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Flache Störstelle |0 (DE-588)4285933-5 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Dotierung |0 (DE-588)4130672-7 |2 gnd |9 rswk-swf |
| 655 | 7 | |0 (DE-588)4113937-9 |a Hochschulschrift |2 gnd-content | |
| 689 | 0 | 0 | |a Siliciumhalbleiter |0 (DE-588)4274465-9 |D s |
| 689 | 0 | 1 | |a Dotierung |0 (DE-588)4130672-7 |D s |
| 689 | 0 | 2 | |a Flache Störstelle |0 (DE-588)4285933-5 |D s |
| 689 | 0 | |5 DE-604 | |
| 830 | 0 | |a Selected topics of semiconductor physics and technology |v 123 |w (DE-604)BV011499438 |9 123 | |
| 999 | |a oai:aleph.bib-bvb.de:BVB01-021184922 | ||
Record in the Search Index
| _version_ | 1804143896100339712 |
|---|---|
| any_adam_object | |
| author | Stegner, Andre Rainer |
| author_GND | (DE-588)143663968 |
| author_facet | Stegner, Andre Rainer |
| author_role | aut |
| author_sort | Stegner, Andre Rainer |
| author_variant | a r s ar ars |
| building | Verbundindex |
| bvnumber | BV037271970 |
| classification_tum | PHY 690d PHY 696d |
| ctrlnum | (OCoLC)711852543 (DE-599)BVBBV037271970 |
| discipline | Physik |
| edition | 1. Aufl. |
| format | Thesis Book |
| fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01632nam a2200421 cb4500</leader><controlfield tag="001">BV037271970</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">20111121 </controlfield><controlfield tag="007">t</controlfield><controlfield tag="008">110310s2011 ad|| m||| 00||| eng d</controlfield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9783941650237</subfield><subfield code="9">978-3-941650-23-7</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)711852543</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV037271970</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-91</subfield><subfield code="a">DE-12</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">PHY 690d</subfield><subfield code="2">stub</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">PHY 696d</subfield><subfield code="2">stub</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Stegner, Andre Rainer</subfield><subfield code="e">Verfasser</subfield><subfield code="0">(DE-588)143663968</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Shallow dopants in nanostructured and in isotopically engineered silicon</subfield><subfield code="c">Andre Rainer Stegner</subfield></datafield><datafield tag="250" ind1=" " ind2=" "><subfield code="a">1. Aufl.</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">Garching</subfield><subfield code="b">Verein zur Förderung des Walter Schottky Inst. der Techn. Univ. München e.V.</subfield><subfield code="c">2011</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">VII, 185 S.</subfield><subfield code="b">Ill., graph. Darst.</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="490" ind1="1" ind2=" "><subfield code="a">Selected topics of semiconductor physics and technology</subfield><subfield code="v">123</subfield></datafield><datafield tag="502" ind1=" " ind2=" "><subfield code="a">Zugl.: München, Techn. Univ., Diss., 2010</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Siliciumhalbleiter</subfield><subfield code="0">(DE-588)4274465-9</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Flache Störstelle</subfield><subfield code="0">(DE-588)4285933-5</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Dotierung</subfield><subfield code="0">(DE-588)4130672-7</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="655" ind1=" " ind2="7"><subfield code="0">(DE-588)4113937-9</subfield><subfield code="a">Hochschulschrift</subfield><subfield code="2">gnd-content</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">Siliciumhalbleiter</subfield><subfield code="0">(DE-588)4274465-9</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="1"><subfield code="a">Dotierung</subfield><subfield code="0">(DE-588)4130672-7</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="2"><subfield code="a">Flache Störstelle</subfield><subfield code="0">(DE-588)4285933-5</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="830" ind1=" " ind2="0"><subfield code="a">Selected topics of semiconductor physics and technology</subfield><subfield code="v">123</subfield><subfield code="w">(DE-604)BV011499438</subfield><subfield code="9">123</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-021184922</subfield></datafield></record></collection> |
| genre | (DE-588)4113937-9 Hochschulschrift gnd-content |
| genre_facet | Hochschulschrift |
| id | DE-604.BV037271970 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T22:54:56Z |
| institution | BVB |
| isbn | 9783941650237 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-021184922 |
| oclc_num | 711852543 |
| open_access_boolean | |
| owner | DE-91 DE-BY-TUM DE-12 |
| owner_facet | DE-91 DE-BY-TUM DE-12 |
| physical | VII, 185 S. Ill., graph. Darst. |
| publishDate | 2011 |
| publishDateSearch | 2011 |
| publishDateSort | 2011 |
| publisher | Verein zur Förderung des Walter Schottky Inst. der Techn. Univ. München e.V. |
| record_format | marc |
| series | Selected topics of semiconductor physics and technology |
| series2 | Selected topics of semiconductor physics and technology |
| spelling | Stegner, Andre Rainer Verfasser (DE-588)143663968 aut Shallow dopants in nanostructured and in isotopically engineered silicon Andre Rainer Stegner 1. Aufl. Garching Verein zur Förderung des Walter Schottky Inst. der Techn. Univ. München e.V. 2011 VII, 185 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Selected topics of semiconductor physics and technology 123 Zugl.: München, Techn. Univ., Diss., 2010 Siliciumhalbleiter (DE-588)4274465-9 gnd rswk-swf Flache Störstelle (DE-588)4285933-5 gnd rswk-swf Dotierung (DE-588)4130672-7 gnd rswk-swf (DE-588)4113937-9 Hochschulschrift gnd-content Siliciumhalbleiter (DE-588)4274465-9 s Dotierung (DE-588)4130672-7 s Flache Störstelle (DE-588)4285933-5 s DE-604 Selected topics of semiconductor physics and technology 123 (DE-604)BV011499438 123 |
| spellingShingle | Stegner, Andre Rainer Shallow dopants in nanostructured and in isotopically engineered silicon Selected topics of semiconductor physics and technology Siliciumhalbleiter (DE-588)4274465-9 gnd Flache Störstelle (DE-588)4285933-5 gnd Dotierung (DE-588)4130672-7 gnd |
| subject_GND | (DE-588)4274465-9 (DE-588)4285933-5 (DE-588)4130672-7 (DE-588)4113937-9 |
| title | Shallow dopants in nanostructured and in isotopically engineered silicon |
| title_auth | Shallow dopants in nanostructured and in isotopically engineered silicon |
| title_exact_search | Shallow dopants in nanostructured and in isotopically engineered silicon |
| title_full | Shallow dopants in nanostructured and in isotopically engineered silicon Andre Rainer Stegner |
| title_fullStr | Shallow dopants in nanostructured and in isotopically engineered silicon Andre Rainer Stegner |
| title_full_unstemmed | Shallow dopants in nanostructured and in isotopically engineered silicon Andre Rainer Stegner |
| title_short | Shallow dopants in nanostructured and in isotopically engineered silicon |
| title_sort | shallow dopants in nanostructured and in isotopically engineered silicon |
| topic | Siliciumhalbleiter (DE-588)4274465-9 gnd Flache Störstelle (DE-588)4285933-5 gnd Dotierung (DE-588)4130672-7 gnd |
| topic_facet | Siliciumhalbleiter Flache Störstelle Dotierung Hochschulschrift |
| volume_link | (DE-604)BV011499438 |
| work_keys_str_mv | AT stegnerandrerainer shallowdopantsinnanostructuredandinisotopicallyengineeredsilicon |