Shallow dopants in nanostructured and in isotopically engineered silicon:
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Abschlussarbeit Buch |
| Sprache: | English |
| Veröffentlicht: |
Garching
Verein zur Förderung des Walter Schottky Inst. der Techn. Univ. München e.V.
2011
|
| Ausgabe: | 1. Aufl. |
| Schriftenreihe: | Selected topics of semiconductor physics and technology
123 |
| Schlagworte: | |
| Beschreibung: | VII, 185 S. Ill., graph. Darst. |
| ISBN: | 9783941650237 |
Internformat
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| 245 | 1 | 0 | |a Shallow dopants in nanostructured and in isotopically engineered silicon |c Andre Rainer Stegner |
| 250 | |a 1. Aufl. | ||
| 264 | 1 | |a Garching |b Verein zur Förderung des Walter Schottky Inst. der Techn. Univ. München e.V. |c 2011 | |
| 300 | |a VII, 185 S. |b Ill., graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
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| 490 | 1 | |a Selected topics of semiconductor physics and technology |v 123 | |
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Datensatz im Suchindex
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| author | Stegner, Andre Rainer |
| author_GND | (DE-588)143663968 |
| author_facet | Stegner, Andre Rainer |
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| bvnumber | BV037271970 |
| classification_tum | PHY 690d PHY 696d |
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| discipline | Physik |
| edition | 1. Aufl. |
| format | Thesis Book |
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| id | DE-604.BV037271970 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T22:54:56Z |
| institution | BVB |
| isbn | 9783941650237 |
| language | English |
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| physical | VII, 185 S. Ill., graph. Darst. |
| publishDate | 2011 |
| publishDateSearch | 2011 |
| publishDateSort | 2011 |
| publisher | Verein zur Förderung des Walter Schottky Inst. der Techn. Univ. München e.V. |
| record_format | marc |
| series | Selected topics of semiconductor physics and technology |
| series2 | Selected topics of semiconductor physics and technology |
| spelling | Stegner, Andre Rainer Verfasser (DE-588)143663968 aut Shallow dopants in nanostructured and in isotopically engineered silicon Andre Rainer Stegner 1. Aufl. Garching Verein zur Förderung des Walter Schottky Inst. der Techn. Univ. München e.V. 2011 VII, 185 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Selected topics of semiconductor physics and technology 123 Zugl.: München, Techn. Univ., Diss., 2010 Siliciumhalbleiter (DE-588)4274465-9 gnd rswk-swf Flache Störstelle (DE-588)4285933-5 gnd rswk-swf Dotierung (DE-588)4130672-7 gnd rswk-swf (DE-588)4113937-9 Hochschulschrift gnd-content Siliciumhalbleiter (DE-588)4274465-9 s Dotierung (DE-588)4130672-7 s Flache Störstelle (DE-588)4285933-5 s DE-604 Selected topics of semiconductor physics and technology 123 (DE-604)BV011499438 123 |
| spellingShingle | Stegner, Andre Rainer Shallow dopants in nanostructured and in isotopically engineered silicon Selected topics of semiconductor physics and technology Siliciumhalbleiter (DE-588)4274465-9 gnd Flache Störstelle (DE-588)4285933-5 gnd Dotierung (DE-588)4130672-7 gnd |
| subject_GND | (DE-588)4274465-9 (DE-588)4285933-5 (DE-588)4130672-7 (DE-588)4113937-9 |
| title | Shallow dopants in nanostructured and in isotopically engineered silicon |
| title_auth | Shallow dopants in nanostructured and in isotopically engineered silicon |
| title_exact_search | Shallow dopants in nanostructured and in isotopically engineered silicon |
| title_full | Shallow dopants in nanostructured and in isotopically engineered silicon Andre Rainer Stegner |
| title_fullStr | Shallow dopants in nanostructured and in isotopically engineered silicon Andre Rainer Stegner |
| title_full_unstemmed | Shallow dopants in nanostructured and in isotopically engineered silicon Andre Rainer Stegner |
| title_short | Shallow dopants in nanostructured and in isotopically engineered silicon |
| title_sort | shallow dopants in nanostructured and in isotopically engineered silicon |
| topic | Siliciumhalbleiter (DE-588)4274465-9 gnd Flache Störstelle (DE-588)4285933-5 gnd Dotierung (DE-588)4130672-7 gnd |
| topic_facet | Siliciumhalbleiter Flache Störstelle Dotierung Hochschulschrift |
| volume_link | (DE-604)BV011499438 |
| work_keys_str_mv | AT stegnerandrerainer shallowdopantsinnanostructuredandinisotopicallyengineeredsilicon |