Großsignalmodell für GaAs Hetero-Bipolar-Transistoren für Leistungsanwendungen in der Mobilkommunikation:
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Abschlussarbeit Buch |
| Sprache: | German |
| Veröffentlicht: |
Berlin
dissertation.de
2002
|
| Ausgabe: | Als Ms. gedr. |
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | VIII, 139 S. Ill., graph. Darst. : 21 cm |
| ISBN: | 3898253929 |
Internformat
MARC
| LEADER | 00000nam a2200000 c 4500 | ||
|---|---|---|---|
| 001 | BV037224838 | ||
| 003 | DE-604 | ||
| 007 | t | ||
| 008 | 110214s2002 gw ad|| m||| 00||| ger d | ||
| 016 | 7 | |a 963619985 |2 DE-101 | |
| 020 | |a 3898253929 |c kart. : EUR 39.00 |9 3-89825-392-9 | ||
| 035 | |a (OCoLC)76373299 | ||
| 035 | |a (DE-599)BVBBV037224838 | ||
| 040 | |a DE-604 |b ger |e rakddb | ||
| 041 | 0 | |a ger | |
| 044 | |a gw |c DE | ||
| 049 | |a DE-83 | ||
| 100 | 1 | |a Rudolph, Matthias |d 1969- |e Verfasser |0 (DE-588)123731771 |4 aut | |
| 245 | 1 | 0 | |a Großsignalmodell für GaAs Hetero-Bipolar-Transistoren für Leistungsanwendungen in der Mobilkommunikation |c Matthias Rudolph |
| 250 | |a Als Ms. gedr. | ||
| 264 | 1 | |a Berlin |b dissertation.de |c 2002 | |
| 300 | |a VIII, 139 S. |b Ill., graph. Darst. : 21 cm | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 502 | |a Zugl.: Darmstadt, Techn. Univ., Diss., 2001 | ||
| 650 | 0 | 7 | |a Ersatzschaltbild |0 (DE-588)4152878-5 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Mobilfunk |0 (DE-588)4170280-3 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Großsignalverhalten |0 (DE-588)4158301-2 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Heterobipolartransistor |0 (DE-588)4254091-4 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Rauscheigenschaft |0 (DE-588)4177091-2 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Galliumarsenid-Bauelement |0 (DE-588)4155861-3 |2 gnd |9 rswk-swf |
| 655 | 7 | |0 (DE-588)4113937-9 |a Hochschulschrift |2 gnd-content | |
| 689 | 0 | 0 | |a Mobilfunk |0 (DE-588)4170280-3 |D s |
| 689 | 0 | 1 | |a Heterobipolartransistor |0 (DE-588)4254091-4 |D s |
| 689 | 0 | 2 | |a Galliumarsenid-Bauelement |0 (DE-588)4155861-3 |D s |
| 689 | 0 | 3 | |a Ersatzschaltbild |0 (DE-588)4152878-5 |D s |
| 689 | 0 | 4 | |a Großsignalverhalten |0 (DE-588)4158301-2 |D s |
| 689 | 0 | 5 | |a Rauscheigenschaft |0 (DE-588)4177091-2 |D s |
| 689 | 0 | |5 DE-604 | |
| 856 | 4 | 2 | |m DNB Datenaustausch |q application/pdf |u http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=021138652&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |3 Inhaltsverzeichnis |
| 943 | 1 | |a oai:aleph.bib-bvb.de:BVB01-021138652 | |
Datensatz im Suchindex
| _version_ | 1808136634727661568 |
|---|---|
| adam_text |
CONTENTS
1
INTRODUCTION
11
1.1
INTRODUCTION
GENERALE
ET
INOTIVATIONS
.
12
1.1.1
SYSTEME
3D
:
ELECTRONS
FORTENIENT
CORRELES
.
12
1.1.2
SPECTROSCOPIES
RESONNANTES
POUR
LE
SYSTEMES
3D
.
14
1.1.3
INSTRUMENTATION
:
TAYOIMEINENT
SYNCHROTRON,
SPECTROMCTRCS
RT
DETECTION
DE
SPUEL
.
15
1.1.4
SUPRACONDUCTEUIS
AE
HAUTE
TEMPERATURE
.
17
1.1.5
PHOTOEMISSION
RESONUANTE
AVEC
PHOTONS
POLARISES
CIRCULAIRC
MENT
ET
DETECTION
DE
SPIN
:
AE
LA
RECHERCHE
DES
SINGULETS
DE
ZHANG-RICE
.
18
1.2
GENERAL
INTRODUCTION
AND
INOTIVATIONS
.
19
1.2.1
3D
TRANSITION
METAL
SYSTEMS:
STRONGLY
CORRELATED
ELECTRONS
.
.
20
1.2.2
RESONANT
SPCCTROSCOPICS
FOR
THE
3DTM
SYSTEMS
.
21
1.2.3
INSTRUMENTATION:
SYNCHROTRON
RADIATION,
SPCCTROMCTCRS
AND
SPIN
DETECTION
.
22
1.2.4
HIGH
TENRPERATURE
SUPERCONDUCTORS
.
24
1.2.5
RESONANT
PHOTOEMISSION
WITH
POLARISED
PHOTONS
AND
SPIN
DE
TECTION:
LOOKING
FOR
THE
ZHANG-RICE
SINGLETS
.
25
2
RESONANT
SPECTROSCOPIES
AND
THE
3D
TRANSITION
METAL
SYSTEMS
31
2.1
3D
TRANSITION
METAL
OXIDES
IN
THE
LOCALISED
PICTURC
.
31
2.2
SOFT
X-RAY
RESONANT
SPECTROSCOPIES
FOR
THE
STUDY
OF
CORRELATION
IN
3D
TRANSITION
METAL
COMPOUNDS
.
37
2.2.1
L-2,J
RESONANT
SPECTROSCOPIES
.
37
2.2.2
RESONANT
INELASTIC
X-RAY
SCATT.ERING
AND
RESONANT
PHOTOEMISSION
39
2.3
L;I
RESONANT
PHOTOEMISSION
AND
RESONANT
X-RAY
SCATTERING
OF
CUO
AND
CU
2
O
.
47
2.3.1
RADIATIONLESS
RAMAN
OF
CUO
AND
C112O
.
47
2.3.2
THE
KRAMERS-HEISENBERG
FORMULA
FOR
SECOND
ORDER
PROCESSES
.
56
2.3.3
RADIATIVE
RAMAN
OF
CUO
.
58
2.4
DICHIOISM
IN
THE
PERPEUDICULAR
GEOMETRY
.
62
2.4.1
MAGNETIC
DICHROISM
IN
RESXPS
AND
RIXS
.
62
2.4.2
SINN
RULES
IN
PERPEUDICULAR
GCOMETIY
AND
CMISSION
ANGLE
DE
PENDENCE
.
83
2.5
MULTIATOM
RESONANT
PHOTOEMISSION
.
88
8
2.6
RESONANT
SPIN-RESOLVED
PHOTOEMISSION
OF
CUPRATCS
.
94
3
INSTRUMENTATION
FOR
RESONANT
SPECTROSCOPIES
IN
THE
SOFT
X-RAY
RAENGE
99
3.1
INTIODUCTION
.
99
3.2
THE
SOURCE
OF
X-RAY
RADIATION,
THE
MONOCHROMATOR
AND
THE
SAMPLE
ENVIROIMIENT
.
100
3.2.1
SYNCHROTRON
RADIATION:
MONOCHROMATIC,
TUNABLE
AND
POLARISED
SOFT
X-RAYS
.
100
3.2.2
MONOCHROMATORS
FOR
SOFT
X-RAYS
.
103
3.2.3
SAMPLE
ENVIRONMENT
FOR
SOFT
X-RAY
EMISSION
AND
PHOTOEMISSION
EXPERIMENTS
.
105
3.3
SPECT.ROINET.EIS
FOI
SOFT
X-RAY
EMISSION
AND
PHOTOEMISSION
SPECTROSCOPIESL08
3.3.1
THE
SPECTROMCTER
FOR
SOFT
X-RAY
EMISSION
AT
ID12B
OF
THE
ESRF108
3.3.2
THE
HEMISPHERICAL
ELECTRON
ENERGY
ANALYSER
AT
ID12B
OF
THE
ESRF
.
111
3.4
INSTALLATION
OF
A
MINI-MOTT
ELECTRON
SPIN
POLARIMETER
ON
A
HEMISPHER
ICAL
ANALYSER
.
115
3.4.1
INTRODUCTION
.
115
3.4.2
THE.
BASICS
OF
ELECTTON
SPIN
POLARIMET.RY
.
116
3.4.3
THE
CHOICE
OF
THE
POLARIMETER
.
119
3.4.4
MATCHING
THE
MINI-MOTT
TO
THE
HEMISPHERICAL
ANALYSER
.
121
3.4.5
SPIN
RESOLVED
AND
SPIN
INTEGRATED
DETECTIONS
IN
PARALLEL
.
130
3.4.6
SONIC
MOIC
DETAILS
ON
THE
RICE
MINI-MOTT
POLAIIMCTCR
.
131
3.4.7
INSTRUMENTAL
ASYMMETRIES
AND
DATA
TRCATMENT
.
135
3.4.8
THE
PUBLISHED
PAPER
DESCRIBING
THE
SPIN
RESOLVED
PHOTOEMIS
SION
INSTRUMENT
.
138
4
RESONANT
SPIN-RESOLVED
PHOTOEMISSION
WITH
CIRCULARLY
POLARISED
X
RAYS
149
4.1
INTRODUCTION
.
149
4.2
MOTIVATION;
ABOUT
HIGH
TEMPERATNRE
SUPERCONDUETIVITY
.
150
4.2.1
INTRODUCING
CUPRATE
SUPERCONDUCTORS
.
150
4.2.2
THCORCTICAL
MODEL
ON
HTS
(IN
BRIEF)
.
152
4.2.3
ZHANG-RICE
SINGLCTS
.
163
4.2.4
RESONANT
SPIN-RESOLVED
PHOTOEMISSION
SPECTROSCOPY
WITH
CIR
CULARLY
POLARISED
X-RAYS:
RESSCP
.
170
4.3
THE
ATOMIC
CALCULATION
OF
RESONANT
SPIN
RESOLVED
PHOTOEMISSION
OF
CU
2+
178
4.3.1
THE
TWO
STEP
MODEL
FOR
AN
ISOLATED
ATOM
.
178
4.3.2
MATRIX
CLEMENTS
.
183
4.3.3
POLYCRYSTALLINE
CUO
.
186
4.3.4
ORICNTED
HIGH
T
C
SUPERCOUDUCTING
CUPRATCS
.
190
4.3.5
ANGULAR
DEPENDENCE
OF
THE
MEASURED
SPIN
POHUISATION
.
194
4.3.6
OFF-RESONANCE
SCP
OF
CUO
.
198
4.3.7
RESONANT
SCP
ON
NIO
.
202
4.4
EXPERIMENTAL
DATA
ON
CUPRATCS
.
207
4.4.1
CUO:
A
COMPLETE
TEST
OF
RESSCP
.
207
9
4.4.1.1
INTAODUCTION
AND
SIGRR
CONVENTION
.
207
4.4.1.2
EXPERIMENTAL
SET-UP
FOR
CUO
.
207
4.4.1.3
THE
L;J
RESONANT
ENHANCCMCNT
.
209
4.4.1.4
THE
L3
RESONANT
VALENCE-STATE
SPECTRA:
THE
'
ZR
.
.
.
213
4.4.1.5
THE
L3
AND
LJ
RESONANT
SPECTRA:
CHECKING
THE
ATOMIC
MODEL
.
216
4.4.2
RCSSCP
OF
LAYERCD
CUPRATES
.
225
4.4.2.1
EXPERIMENTAL
SET-UP
FOR
THE
LAYERCD
SAMPLCS
.
225
4.4.2.2
UNDOPED
LAYERED
CUPRATE:
S12C11O2CI2
.
226
4.4.2.3
UNDOPED
AND
DOPED
LAYERED
SUPERCONDUCTING
CUPRATE:
LAI-XSR.CUOI
.
230
4.4.2.4
HOLE
DOPED:
BI-JSI^CACU'JOS+AE
.
236
4.4.2.5
ELECTRON
DOPED:
ND2-A-CE
T
CUO4
.
244
4.4.2.6
DISCUSSION
AND
CONCLUSIONS
.
244
5
CONCLUSIONS
255
5.1
CONCLUSIONS
GENERALES
.
255
5.2
GENERAL
CONCLUSIONS
.
257
A
CURRICULUM
VITAE
AND
PUBLICATIONS
259
A.L
CURRICULUM
VITRC
.
259
A.2
PUBLICATIONS
RELAT.ED
TO
THE
THESIS
.
260
A.3
OTHER
RECENT
PUBLICATIONS
.
261 |
| any_adam_object | 1 |
| author | Rudolph, Matthias 1969- |
| author_GND | (DE-588)123731771 |
| author_facet | Rudolph, Matthias 1969- |
| author_role | aut |
| author_sort | Rudolph, Matthias 1969- |
| author_variant | m r mr |
| building | Verbundindex |
| bvnumber | BV037224838 |
| ctrlnum | (OCoLC)76373299 (DE-599)BVBBV037224838 |
| edition | Als Ms. gedr. |
| format | Thesis Book |
| fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>00000nam a2200000 c 4500</leader><controlfield tag="001">BV037224838</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="007">t</controlfield><controlfield tag="008">110214s2002 gw ad|| m||| 00||| ger d</controlfield><datafield tag="016" ind1="7" ind2=" "><subfield code="a">963619985</subfield><subfield code="2">DE-101</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">3898253929</subfield><subfield code="c">kart. : EUR 39.00</subfield><subfield code="9">3-89825-392-9</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)76373299</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV037224838</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">rakddb</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">ger</subfield></datafield><datafield tag="044" ind1=" " ind2=" "><subfield code="a">gw</subfield><subfield code="c">DE</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-83</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Rudolph, Matthias</subfield><subfield code="d">1969-</subfield><subfield code="e">Verfasser</subfield><subfield code="0">(DE-588)123731771</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Großsignalmodell für GaAs Hetero-Bipolar-Transistoren für Leistungsanwendungen in der Mobilkommunikation</subfield><subfield code="c">Matthias Rudolph</subfield></datafield><datafield tag="250" ind1=" " ind2=" "><subfield code="a">Als Ms. gedr.</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">Berlin</subfield><subfield code="b">dissertation.de</subfield><subfield code="c">2002</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">VIII, 139 S.</subfield><subfield code="b">Ill., graph. Darst. : 21 cm</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="502" ind1=" " ind2=" "><subfield code="a">Zugl.: Darmstadt, Techn. Univ., Diss., 2001</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Ersatzschaltbild</subfield><subfield code="0">(DE-588)4152878-5</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Mobilfunk</subfield><subfield code="0">(DE-588)4170280-3</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Großsignalverhalten</subfield><subfield code="0">(DE-588)4158301-2</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Heterobipolartransistor</subfield><subfield code="0">(DE-588)4254091-4</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Rauscheigenschaft</subfield><subfield code="0">(DE-588)4177091-2</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Galliumarsenid-Bauelement</subfield><subfield code="0">(DE-588)4155861-3</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="655" ind1=" " ind2="7"><subfield code="0">(DE-588)4113937-9</subfield><subfield code="a">Hochschulschrift</subfield><subfield code="2">gnd-content</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">Mobilfunk</subfield><subfield code="0">(DE-588)4170280-3</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="1"><subfield code="a">Heterobipolartransistor</subfield><subfield code="0">(DE-588)4254091-4</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="2"><subfield code="a">Galliumarsenid-Bauelement</subfield><subfield code="0">(DE-588)4155861-3</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="3"><subfield code="a">Ersatzschaltbild</subfield><subfield code="0">(DE-588)4152878-5</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="4"><subfield code="a">Großsignalverhalten</subfield><subfield code="0">(DE-588)4158301-2</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="5"><subfield code="a">Rauscheigenschaft</subfield><subfield code="0">(DE-588)4177091-2</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="m">DNB Datenaustausch</subfield><subfield code="q">application/pdf</subfield><subfield code="u">http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=021138652&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA</subfield><subfield code="3">Inhaltsverzeichnis</subfield></datafield><datafield tag="943" ind1="1" ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-021138652</subfield></datafield></record></collection> |
| genre | (DE-588)4113937-9 Hochschulschrift gnd-content |
| genre_facet | Hochschulschrift |
| id | DE-604.BV037224838 |
| illustrated | Illustrated |
| indexdate | 2024-08-23T00:37:47Z |
| institution | BVB |
| isbn | 3898253929 |
| language | German |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-021138652 |
| oclc_num | 76373299 |
| open_access_boolean | |
| owner | DE-83 |
| owner_facet | DE-83 |
| physical | VIII, 139 S. Ill., graph. Darst. : 21 cm |
| publishDate | 2002 |
| publishDateSearch | 2002 |
| publishDateSort | 2002 |
| publisher | dissertation.de |
| record_format | marc |
| spelling | Rudolph, Matthias 1969- Verfasser (DE-588)123731771 aut Großsignalmodell für GaAs Hetero-Bipolar-Transistoren für Leistungsanwendungen in der Mobilkommunikation Matthias Rudolph Als Ms. gedr. Berlin dissertation.de 2002 VIII, 139 S. Ill., graph. Darst. : 21 cm txt rdacontent n rdamedia nc rdacarrier Zugl.: Darmstadt, Techn. Univ., Diss., 2001 Ersatzschaltbild (DE-588)4152878-5 gnd rswk-swf Mobilfunk (DE-588)4170280-3 gnd rswk-swf Großsignalverhalten (DE-588)4158301-2 gnd rswk-swf Heterobipolartransistor (DE-588)4254091-4 gnd rswk-swf Rauscheigenschaft (DE-588)4177091-2 gnd rswk-swf Galliumarsenid-Bauelement (DE-588)4155861-3 gnd rswk-swf (DE-588)4113937-9 Hochschulschrift gnd-content Mobilfunk (DE-588)4170280-3 s Heterobipolartransistor (DE-588)4254091-4 s Galliumarsenid-Bauelement (DE-588)4155861-3 s Ersatzschaltbild (DE-588)4152878-5 s Großsignalverhalten (DE-588)4158301-2 s Rauscheigenschaft (DE-588)4177091-2 s DE-604 DNB Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=021138652&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Rudolph, Matthias 1969- Großsignalmodell für GaAs Hetero-Bipolar-Transistoren für Leistungsanwendungen in der Mobilkommunikation Ersatzschaltbild (DE-588)4152878-5 gnd Mobilfunk (DE-588)4170280-3 gnd Großsignalverhalten (DE-588)4158301-2 gnd Heterobipolartransistor (DE-588)4254091-4 gnd Rauscheigenschaft (DE-588)4177091-2 gnd Galliumarsenid-Bauelement (DE-588)4155861-3 gnd |
| subject_GND | (DE-588)4152878-5 (DE-588)4170280-3 (DE-588)4158301-2 (DE-588)4254091-4 (DE-588)4177091-2 (DE-588)4155861-3 (DE-588)4113937-9 |
| title | Großsignalmodell für GaAs Hetero-Bipolar-Transistoren für Leistungsanwendungen in der Mobilkommunikation |
| title_auth | Großsignalmodell für GaAs Hetero-Bipolar-Transistoren für Leistungsanwendungen in der Mobilkommunikation |
| title_exact_search | Großsignalmodell für GaAs Hetero-Bipolar-Transistoren für Leistungsanwendungen in der Mobilkommunikation |
| title_full | Großsignalmodell für GaAs Hetero-Bipolar-Transistoren für Leistungsanwendungen in der Mobilkommunikation Matthias Rudolph |
| title_fullStr | Großsignalmodell für GaAs Hetero-Bipolar-Transistoren für Leistungsanwendungen in der Mobilkommunikation Matthias Rudolph |
| title_full_unstemmed | Großsignalmodell für GaAs Hetero-Bipolar-Transistoren für Leistungsanwendungen in der Mobilkommunikation Matthias Rudolph |
| title_short | Großsignalmodell für GaAs Hetero-Bipolar-Transistoren für Leistungsanwendungen in der Mobilkommunikation |
| title_sort | großsignalmodell fur gaas hetero bipolar transistoren fur leistungsanwendungen in der mobilkommunikation |
| topic | Ersatzschaltbild (DE-588)4152878-5 gnd Mobilfunk (DE-588)4170280-3 gnd Großsignalverhalten (DE-588)4158301-2 gnd Heterobipolartransistor (DE-588)4254091-4 gnd Rauscheigenschaft (DE-588)4177091-2 gnd Galliumarsenid-Bauelement (DE-588)4155861-3 gnd |
| topic_facet | Ersatzschaltbild Mobilfunk Großsignalverhalten Heterobipolartransistor Rauscheigenschaft Galliumarsenid-Bauelement Hochschulschrift |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=021138652&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| work_keys_str_mv | AT rudolphmatthias großsignalmodellfurgaasheterobipolartransistorenfurleistungsanwendungenindermobilkommunikation |