Materials and devices for quantum information processing in Si/SiGe:
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Abschlussarbeit Buch |
| Sprache: | English |
| Veröffentlicht: |
Garching
Verein zur Förderung des Walter-Schottky-Inst. der Techn. Univ. München
2010
|
| Ausgabe: | 1. Aufl. |
| Schriftenreihe: | Selected topics of semiconductor physics and technology
121 |
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | IX, 158 S. Ill., graph. Darst. 21 cm |
| ISBN: | 9783941650213 |
Internformat
MARC
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| 020 | |a 9783941650213 |c kart. : EUR 15.00 |9 978-3-941650-21-3 | ||
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| 100 | 1 | |a Sailer, Jürgen |e Verfasser |4 aut | |
| 245 | 1 | 0 | |a Materials and devices for quantum information processing in Si/SiGe |c Jürgen Sailer |
| 250 | |a 1. Aufl. | ||
| 264 | 1 | |a Garching |b Verein zur Förderung des Walter-Schottky-Inst. der Techn. Univ. München |c 2010 | |
| 300 | |a IX, 158 S. |b Ill., graph. Darst. |c 21 cm | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 490 | 1 | |a Selected topics of semiconductor physics and technology |v 121 | |
| 502 | |a Zugl.: München, Techn. Univ., Diss., 2010 | ||
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| 999 | |a oai:aleph.bib-bvb.de:BVB01-020881109 | ||
Datensatz im Suchindex
| _version_ | 1804143693351878657 |
|---|---|
| adam_text | CONTENTS
ABSTRACT
I
ZUSAMMENFASSUNG
III
1
INTRODUCTION
1
2
MOLECULAR
BEAM
EPITAXY
OF
TWO-DIMENSIONAL
ELECTRON
SYSTEMS
IN
SI/SIGE
5
2.1
REALIZATION
AND
PROPERTIES
OF
2DES
IN
SI/SIGE
....................................................
5
2.2
VIRTUAL
SUBSTRATES
......................................................................................................
8
2.2.1
GRADED
BUFFER
................................................................................................
8
2.2.2
LOW-TEMPERATURE
SILICON
................................................................................
9
2.2.3
COMPARISON
OF VIRTUAL
SUBSTRATE
CONCEPTS
................................................
10
2.3
GROWTH
OPTIMIZATION
OF
TWO-DIMENSIONAL
ELECTRON
SYSTEMS
................................
13
2.3.1
ELECTRICAL
CHARACTERIZATION
............................................................................
14
2.3.2
A
GROWTH
INTERRUPTION
TO
SUPPRESS
A
CONTAMINATION
OF
THE
STRAINED
SI
.
15
2.3.3
SPLIT-GATES
ON
SI/SIGE
HETEROSTRUCTURES
...................................................
18
2.3.4
IDENTIFICATION
OF
A
N-TYPE
BACKGROUND
CONTAMINATION
................................
21
2.3.5
MITIGATING
THE
INFLUENCE
OF
BACKGROUND
CONTAMINATION
.............................
24
2.3.6
HYSTERESIS-FREE
LARGE
AREA
GATING
OF
SI/SIGE
HETEROSTRUCTURES
....
28
2.3.7
DOPING
EFFICIENCY
AND
PERSISTENT
PHOTO
CONDUCTIVITY
................................30
2.4
CONCLUSION
AND
OUTLOOK
...........................................................................................
31
3
NUCLEAR
SPIN
ENGINEERING
33
3.1
NUCLEAR
SPINS
IN
NANOSTRUCTURES
...........................................................................
33
3.1.1
NUCLEAR
SPINS
IN
THE
SI/SIGE
MATERIAL
SYSTEM
.........................................34
3.2
ENGINEERING
THE
NUCLEAR
SPIN
CONTENT
IN
SI/SIGE
...................................................
35
3.2.1
MOLECULAR
BEAM
EPITAXY
OF
SINGLE
ISOTOPES
...............................................
35
3.2.2
NUCLEAR
SPIN
FREE
SOURCE
MATERIAL
..............................................................
36
3.3
CHALLENGES
IN
MOLECULAR
BEAM
EPITAXY
OF
SINGLE
ISOTOPES
...................................37
3.4
MN
CONTAMINATION
DURING
GROWTH
...........................................................................
39
3.5
REALIZATION
AND
CHARACTERIZATION
OF
2DES
IN
NUCLEAR
SPIN
FREE
ENVIRONMENT
.
43
3.6
CONCLUSION
AND
OUTLOOK
...........................................................................................
46
VII
4
HALL
RESISTANCE
OVERSHOOT
49
4.1
METHODS
AND
SAMPLES
..............................................................................................
49
4.2
PHENOMENOLOGY
OF
THE
HALL
RESISTANCE
OVERSHOOT
...............................................
50
4.3
THE
HALL
RESISTANCE
OVERSHOOT
-
AN
ARTIFACT?
........................................................
51
4.3.1
LITERATURE
REVIEW
...........................................................................................
52
4.4
SCREENING
THEORY
OF
THE
QUANTUM
HALL
EFFECT
........................................................
55
4.5
EXPERIMENTAL
INVESTIGATION
OF THE
HALL
RESISTANCE
OVERSHOOT
...............................
56
4.5.1
TEMPERATURE
AND
DENSITY
DEPENDENCE
......................................................
57
4.5.2
CURRENT
AND
CURRENT
DENSITY
DEPENDENCE
...................................................
59
4.6
EXPLANATION
OF
THE
HALL
RESISTANCE
OVERSHOOT
WITHIN
THE
SCREENING
THEORY
.
.
62
4.6.1
FORMATION
OF
THE
OVERSHOOT
WITHIN
THE
SCREENING
THEORY
..........................
63
4.6.2
DISCUSSION
OF
OUR
EXPERIMENTAL
RESULTS
......................................................
65
4.6.3
APPLICABILITY
OF
THE
MODEL
IN
OTHER
MATERIAL
SYSTEMS
................................
67
4.7
CONCLUSION
AND
OUTLOOK
...........................................................................................
68
5
A
FEW
ELECTRON
DEVICE
IN
SI/SIGE
71
5.1
BASICS
OF
ELECTROSTATICALLY
DEFINED
QUANTUM
DOTS
...................................................
71
5.1.1
SINGLE
QUANTUM
DOTS
.................................................................................
71
5.1.2
DOUBLE
QUANTUM
DOTS
.................................................................................
74
5.1.3
CO-TUNNELING
.................................................................................................
80
5.2
QUANTUM
DOTS
IN
SI/SIGE
.......................................................................................
80
5.3
SAMPLE
DESIGN
AND
HANDLING
.................................................................................
81
5.4
A
NEARBY
SINGLE
QUANTUM
DOT
AS
CHARGE
SENSOR
..................................................
83
5.5
A
DOUBLE
QUANTUM
DOT
IN
THE
FEW
ELECTRON
REGIME
...............................................86
5.6
FEATURES
AND
PROPERTIES
OF
THE
STUDIED
DEVICE
.....................................................87
5.6.1
TUNABLE
INTER-DOT
TUNNEL
COUPLING
...............................................................
87
5.6.2
ISOLATED
DOUBLE
QUANTUM
DOT
.....................................................................
88
5.6.3
CO-TUNNELING
AND
ASYMMETRIC
COUPLING
TO
THE
LEADS
...............................90
5.6.4
CHARGE
NOISE
..............................................................................................92
5.7
MODELING
OF
THE
DEVICE
...........................................................................................
93
5.7.1
INFLUENCE
OF
ACROSS
CAPACITANCE
...............................................................93
5.7.2
EVALUATION
OF
THE
MEASUREMENTS
...............................................................95
5.8
CONCLUSION
AND
OUTLOOK
...........................................................................................
96
6
CONCLUSION
AND
OUTLOOK
99
APPENDIX
103
A
EXPERIMENTAL
TECHNIQUES
103
A.1
MOLECULAR
BEAM
EPITAXY
(MBE)
.............................................................................
103
A.2
SECONDARY
ION
MASS
SPECTROMETRY
(SIMS)
.......................................................
105
A.3
ATOMIC
FORCE
MICROSCOPY
(AFM)
..........................................................................
107
A.4
X-RAY
DIFFRACTION
(XRD)
..........................................................................................
107
A.5
TRANSMISSION
ELECTRON
MICROSCOPY
(TEM)
..........................................................
108
VIII
A.6
LOW-TEMPERATURE
MAGNETO-TRANSPORT
................................................................
108
A.
6.1
4.2K
T
1.4
K
AND
B
5.4
T
..............................................................
108
A.
6.2
1.2K
T
0.3K
AND
B
10
T
..............................................................
109
A.6.3
T
0.3K
...................................................................................................
109
B
MOLECULAR
BEAM
EPITAXY
111
B.1
INSTALLATION
OF
28SI
AND
THE
EIES-IV
GUARDIAN
.......................................................
111
B.1.1
MBE
CHAMBER
GEOMETRY
..........................................................................
111
B.1.2
EIES-IV
GUARDIAN
FLUX
MONITORING
SYSTEM
..............................................
112
B.2
GROWTH
OF
NUCLEAR
SPIN
ENGINEERED
SAMPLES
......................................................
115
B.2.1
MN:
COUNTERMEASURES
................................................................................
117
B.3
FLUX
DISTRIBUTION
DURING
MBE
...............................................................................
118
B.4
MN
BACKGROUND
CONTAMINATION
............................................................................
122
B.5
28
SI
MBE:
GOOD
TO
KNOW
........................................................................................
125
C
SCHOTTKY
GATE
DEFINED
NANO-STRUCTURES
127
C.1
SCHOTTKY
GATE
MATERIAL:
PT
OR
PD
.........................................................................
127
C.2
GATE
AGING,
DEGRADATION
AND
HF
STAINS
............................................................
129
C.3
EXPERIMENTAL
FACTS
..................................................................................................
132
C.3.1
DQD
MESA
DESIGN
......................................................................................
132
C.3.2
QPC
MESA
DESIGN
......................................................................................
135
C.
3.3
POTENTIAL
FLUCTUATIONS
................................................................................
136
C.4
CALCULATION
OF
THE
STABILITY
DIAGRAM
......................................................................
136
D
PROCESS
TECHNOLOGY
139
BIBLIOGRAPHY
147
LIST
OF
PUBLICATIONS
155
ACKNOWLEDGMENTS
157
IX
|
| any_adam_object | 1 |
| author | Sailer, Jürgen |
| author_facet | Sailer, Jürgen |
| author_role | aut |
| author_sort | Sailer, Jürgen |
| author_variant | j s js |
| building | Verbundindex |
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| classification_tum | ELT 280d PHY 690d |
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| dewey-ones | 537 - Electricity and electronics |
| dewey-raw | 537.622 |
| dewey-search | 537.622 |
| dewey-sort | 3537.622 |
| dewey-tens | 530 - Physics |
| discipline | Physik Elektrotechnik |
| edition | 1. Aufl. |
| format | Thesis Book |
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| genre | (DE-588)4113937-9 Hochschulschrift gnd-content |
| genre_facet | Hochschulschrift |
| id | DE-604.BV036966312 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T22:51:43Z |
| institution | BVB |
| isbn | 9783941650213 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-020881109 |
| oclc_num | 706978172 |
| open_access_boolean | |
| owner | DE-12 DE-91 DE-BY-TUM |
| owner_facet | DE-12 DE-91 DE-BY-TUM |
| physical | IX, 158 S. Ill., graph. Darst. 21 cm |
| publishDate | 2010 |
| publishDateSearch | 2010 |
| publishDateSort | 2010 |
| publisher | Verein zur Förderung des Walter-Schottky-Inst. der Techn. Univ. München |
| record_format | marc |
| series | Selected topics of semiconductor physics and technology |
| series2 | Selected topics of semiconductor physics and technology |
| spelling | Sailer, Jürgen Verfasser aut Materials and devices for quantum information processing in Si/SiGe Jürgen Sailer 1. Aufl. Garching Verein zur Förderung des Walter-Schottky-Inst. der Techn. Univ. München 2010 IX, 158 S. Ill., graph. Darst. 21 cm txt rdacontent n rdamedia nc rdacarrier Selected topics of semiconductor physics and technology 121 Zugl.: München, Techn. Univ., Diss., 2010 Silicium (DE-588)4077445-4 gnd rswk-swf Germanium (DE-588)4135644-5 gnd rswk-swf Heterostruktur (DE-588)4123378-5 gnd rswk-swf Molekularstrahlepitaxie (DE-588)4170399-6 gnd rswk-swf (DE-588)4113937-9 Hochschulschrift gnd-content Silicium (DE-588)4077445-4 s Germanium (DE-588)4135644-5 s Heterostruktur (DE-588)4123378-5 s Molekularstrahlepitaxie (DE-588)4170399-6 s DE-604 Selected topics of semiconductor physics and technology 121 (DE-604)BV011499438 121 DNB Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=020881109&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Sailer, Jürgen Materials and devices for quantum information processing in Si/SiGe Selected topics of semiconductor physics and technology Silicium (DE-588)4077445-4 gnd Germanium (DE-588)4135644-5 gnd Heterostruktur (DE-588)4123378-5 gnd Molekularstrahlepitaxie (DE-588)4170399-6 gnd |
| subject_GND | (DE-588)4077445-4 (DE-588)4135644-5 (DE-588)4123378-5 (DE-588)4170399-6 (DE-588)4113937-9 |
| title | Materials and devices for quantum information processing in Si/SiGe |
| title_auth | Materials and devices for quantum information processing in Si/SiGe |
| title_exact_search | Materials and devices for quantum information processing in Si/SiGe |
| title_full | Materials and devices for quantum information processing in Si/SiGe Jürgen Sailer |
| title_fullStr | Materials and devices for quantum information processing in Si/SiGe Jürgen Sailer |
| title_full_unstemmed | Materials and devices for quantum information processing in Si/SiGe Jürgen Sailer |
| title_short | Materials and devices for quantum information processing in Si/SiGe |
| title_sort | materials and devices for quantum information processing in si sige |
| topic | Silicium (DE-588)4077445-4 gnd Germanium (DE-588)4135644-5 gnd Heterostruktur (DE-588)4123378-5 gnd Molekularstrahlepitaxie (DE-588)4170399-6 gnd |
| topic_facet | Silicium Germanium Heterostruktur Molekularstrahlepitaxie Hochschulschrift |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=020881109&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| volume_link | (DE-604)BV011499438 |
| work_keys_str_mv | AT sailerjurgen materialsanddevicesforquantuminformationprocessinginsisige |