Full-Band Monte Carlo simulations for vertical impact ionization MOSFETs:
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Abschlussarbeit Buch |
| Sprache: | English |
| Veröffentlicht: |
2010
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| Schlagworte: | |
| Online-Zugang: | https://nbn-resolving.org/urn:nbn:de:bvb:706-2318 kostenfrei |
| Beschreibung: | XVI, II, 116 S. graph. Darst. |
Internformat
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| 300 | |a XVI, II, 116 S. |b graph. Darst. | ||
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Datensatz im Suchindex
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| indexdate | 2024-07-20T05:25:37Z |
| institution | BVB |
| language | English |
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| physical | XVI, II, 116 S. graph. Darst. |
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| spelling | Dinh, Thanh Viet 1980- Verfasser (DE-588)143090771 aut Full-Band Monte Carlo simulations for vertical impact ionization MOSFETs Thanh Viet Dinh 2010 XVI, II, 116 S. graph. Darst. txt rdacontent n rdamedia nc rdacarrier Neubiberg, Univ. der Bundeswehr München, Diss., 2010 Nanostruktur (DE-588)4204530-7 gnd rswk-swf Stoßionisation (DE-588)4183433-1 gnd rswk-swf Monte-Carlo-Simulation (DE-588)4240945-7 gnd rswk-swf MOS-FET (DE-588)4207266-9 gnd rswk-swf (DE-588)4113937-9 Hochschulschrift gnd-content MOS-FET (DE-588)4207266-9 s Nanostruktur (DE-588)4204530-7 s Stoßionisation (DE-588)4183433-1 s Monte-Carlo-Simulation (DE-588)4240945-7 s DE-604 Erscheint auch als Online-Ausgabe urn:nbn:de:bvb:706-2318 https://nbn-resolving.org/urn:nbn:de:bvb:706-2318 Resolving-System https://athene-forschung.unibw.de/88030 Verlag kostenfrei |
| spellingShingle | Dinh, Thanh Viet 1980- Full-Band Monte Carlo simulations for vertical impact ionization MOSFETs Nanostruktur (DE-588)4204530-7 gnd Stoßionisation (DE-588)4183433-1 gnd Monte-Carlo-Simulation (DE-588)4240945-7 gnd MOS-FET (DE-588)4207266-9 gnd |
| subject_GND | (DE-588)4204530-7 (DE-588)4183433-1 (DE-588)4240945-7 (DE-588)4207266-9 (DE-588)4113937-9 |
| title | Full-Band Monte Carlo simulations for vertical impact ionization MOSFETs |
| title_auth | Full-Band Monte Carlo simulations for vertical impact ionization MOSFETs |
| title_exact_search | Full-Band Monte Carlo simulations for vertical impact ionization MOSFETs |
| title_full | Full-Band Monte Carlo simulations for vertical impact ionization MOSFETs Thanh Viet Dinh |
| title_fullStr | Full-Band Monte Carlo simulations for vertical impact ionization MOSFETs Thanh Viet Dinh |
| title_full_unstemmed | Full-Band Monte Carlo simulations for vertical impact ionization MOSFETs Thanh Viet Dinh |
| title_short | Full-Band Monte Carlo simulations for vertical impact ionization MOSFETs |
| title_sort | full band monte carlo simulations for vertical impact ionization mosfets |
| topic | Nanostruktur (DE-588)4204530-7 gnd Stoßionisation (DE-588)4183433-1 gnd Monte-Carlo-Simulation (DE-588)4240945-7 gnd MOS-FET (DE-588)4207266-9 gnd |
| topic_facet | Nanostruktur Stoßionisation Monte-Carlo-Simulation MOS-FET Hochschulschrift |
| url | https://nbn-resolving.org/urn:nbn:de:bvb:706-2318 https://athene-forschung.unibw.de/88030 |
| work_keys_str_mv | AT dinhthanhviet fullbandmontecarlosimulationsforverticalimpactionizationmosfets |