Silicon photonics: fundamentals and devices
Gespeichert in:
| Hauptverfasser: | , |
|---|---|
| Format: | Buch |
| Sprache: | English |
| Veröffentlicht: |
Chichester
Wiley
2012
|
| Ausgabe: | 1. publ. |
| Schriftenreihe: | Wiley series in materials for electronic and optoelectronic applications
|
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | XIX, 433 S. zahlr. graph. Darst. |
| ISBN: | 9780470517505 |
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| 100 | 1 | |a Deen, M. Jamal |e Verfasser |4 aut | |
| 245 | 1 | 0 | |a Silicon photonics |b fundamentals and devices |c M. Jamal Deen; P. K. Basu |
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Datensatz im Suchindex
| _version_ | 1804143502203813888 |
|---|---|
| adam_text | Titel: Silicon photonics
Autor: Deen, M. Jamal
Jahr: 2012
Contents
Series Preface xv
Preface xvii
1 Introduction to Silicon Photonics 1
1.1 Introduction 1
1.2 VLSI: Past, Present, and Future Roadmap 2
1.3 The Interconnect Problem in VLSI 3
1.4 The Long-Haul Optical Communication Link 5
1.4.1 Basic Link and Components 5
1.4.2 Materials and Integration 7
1.5 Data Network 8
1.6 Conclusions 8
1.7 Scope of the Book 9
References 11
2 Basic Properties of Silicon 13
2.1 Introduction 13
2.2 Band Structure 14
2.2.1 E-k Diagram: General Considerations 14
2.2.2 Band Properties near Extremas 16
2.2.3 Refined Theory for Band Structures 17
2.2.4 Temperature-and Pressure-Dependent Band Gap 18
2.2.5 Band Structure in Ge 18
2.3 Density-of-States Function 19
2.4 Impurities 22
2.4.1 Donors and Acceptors 22
2.4.2 Isoelectronic Impurities 23
2.5 Alloys of Silicon and Other Group IV Elements 24
2.5.1 Different Alloy Systems 24
2.5.2 Lattice Constants 24
2.5.3 Band Structures of Unstrained Alloys 25
2.6 Heterojunctions and Band Lineup 26
2.7 Si-Based Heterostructures 27
2.7.1 Lattice-Mismatched Heteroepitaxy 27
2.7.2 Pseudomorphic Growth and Critical Thickness 28
2.7.3 Elasticity Theory: Stress and Strain 28
2.7.4 Expressions for Critical Thickness 30
2.7.5 Strain Symmetric Structures and Virtual Substrates 31
viii Contents
2.7.6 Band Offsets and Band Lineup 3^
2.7.7 Electronic Properties of SiGe/Si Heterostructures 36
2.8 Direct Gap: Ge/SiGeSn Heterojunctions
2.8.1 Structures
2.8.2 Band Edges and Band Lineup 40
Problems
References
Suggested Readings
39
39
44
45
Quantum Structures 47
3.1 Introduction 47
3.2 Quantum Wells 47
3.2.1 Condition for Quantum Confinement 48
3.2.2 A Representative Structure 48
3.2.3 Simplified Energy Levels 49
3.2.4 Density-of-States in Two Dimensions 52
3.2.5 Finite Quantum Well 53
3.2.6 Refined Methods 54
3.2.7 Different Band Alignments 55
3.3 Quantum Wires and Dots 55
3.3.1 Subbands and DOS in Quantum Wires 56
3.3.2 Quantum Dots 57
3.4 Superlattices 58
3.5 Si-Based Quantum Structures 59
3.5.1 Electron Subband Structure 59
3.5.2 Hole Subbands 62
3.5.3 Quantum Wells and Barriers 62
3.6 Effect of Electric Field 63
Problems 65
References 67
Suggested Readings 67
Optical Processes 69
4.1 Introduction 69
4.2 Optical Constants 69
4.3 Basic Concepts 73
4.3.1 Absorption and Emission 73
4.3.2 Absorption and Emission Rates 73
4.4 Absorption Processes in Semiconductors 74
4.5 Fundamental Absorption in Direct Gap 75
4.5.1 Conservation Laws 75
4.5.2 Calculation of Absorption Coefficient 76
4.6 Fundamental Absorption in Indirect Gap 82
4.6.1 Theory of Absorption 83
4.6.2 Absorption Spectra in Si 85
86
4.6.3 Absorption Spectra in Ge
Contents ix
4.7 Absorption and Gain 86
4.8 Intervalence Band Absorption 89
4.9 Free-carrier Absorption 89
4.10 Recombination and Luminescence 92
4.10.1 Luminescence Lifetime 92
4.10.2 Carrier Lifetime: Dependence on Carrier Density 94
4.10.3 Absorption and Recombination 95
4.10.4 Microscopic Theory of Recombination 96
4.11 Nonradiative Recombination 97
4.11.1 Recombination via Traps 97
4.11.2 Auger Recombination 100
4.11.3 Surface Recombination 101
4.11.4 Recombination of Complexes 102
4.12 Excitonic and Impurity Absorption 102
4.12.1 Excitons 102
4.12.2 Impurity 104
4.12.3 Bound Excitons 104
4.12.4 Isoelectronic Centres 105
Problems 105
References 107
Optical Processes in Quantum Structures 109
5.1 Introduction 109
5.2 Optical Processes in QWs 110
5.2.1 Absorption in Direct-gap QW 110
5.2.2 Gain in QW 112
5.2.3 Recombination in QWs 112
5.2.4 Polarization-Dependent Momentum Matrix Element 113
5.2.5 Absorption in the Indirect Gap 114
5.2.6 Absorption in Type II QWs 117
5.3 Intersubband Transitions 118
5.3.1 Conduction Subbands: Isotropic Mass 119
5.3.2 Anisotropic Mass 120
5.3.3 Intervalence Band Absorption 122
5.4 Excitonic Processes in QWs 122
5.4.1 Excitons in 2D: Preliminary Concepts 122
5.4.2 Excitons in Purely 2D Systems 123
5.4.3 Excitonic Absorption in Direct-gap QWs 125
5.4.4 Excitonic Processes in Indirect-gap QWs 126
5.4.5 Photoluminescence in QWs 127
5.5 Effect of Electric Fields 127
5.5.1 Qualitative Discussion of Electroabsorption 128
5.5.2 Electroabsorption and Electrorefraction in SiGe QWs 129
5.6 Optical Processes in QWRs 132
5.7 Optical Processes in QDS 133
Problems 135
References 136
x Contents
6 Light Emitters in Si
6.1 Introduction
6.2
139
139
Basic Theory of Light Emission 140
142
6.3 Early Efforts: Zone Folding
6.4 Band Structure Engineering Using Alloys 143
6.5 Quantum Confinement 145
6.5.1 Quasi-direct No-phonon Transition I46
6.5.2 Porous Si 148
6.5.3 Silicon Nanocrystals I49
6.5.4 Quantum Wells, Wires, and Dots 151
6.6 Impurities in Silicon 152
6.6.1 Isoelectronic Impurities 152
6.6.2 Rare-earth Luminescence 152
6.7 Stimulated Emission: Prospect 157
6.7.1 Si Nanocrystals 157
6.7.2 Bulk Si 159
6.8 Intersubband Emission 161
6.8.1 Emission at Mid-infrared 163
6.8.2 Terahertz Emission 163
6.9 Tensile-Strained Ge Layers 165
Problems 167
References 167
Si Light Modulators 171
7.1 Introduction 171
7.2 Physical Effects 172
7.2.1 Electroabsorption and Electrorefraction 173
7.2.2 Electro-Optic Effect 173
7.2.3 Franz-Keldysh Effect 175
7.2.4 Quantum-Confined Stark Effect 175
7.2.5 Carrier-Induced Effects 176
7.2.6 Thermo-Optic Effect 176
7.3 Electrorefraction in Silicon 177
7.3.1 Electro-Optic Effects 177
7.3.2 Carrier Effect 177
7.3.3 Quantum Confined Stark Effect 179
7.4 Thermo-Optic Effects in Si 179
7.5 Modulators: Some Useful Characteristics 180
7.5.1 Modulation Depth 180
7.5.2 Modulation Bandwidth 180
7.5.3 Insertion Loss j8i
7.5.4 Power Consumption jgj
7.5.5 Isolation ^gj
7.6 Modulation Bandwidth under Injection 182
7.7 Optical Structures 103
7.7.1 MZI lg3
7.7.2 Fabry-Perot Resonator 184
Contents xi
7.7.3 MZI versus a Resonator 185
7.8 Electrical Structures 186
7.8.1 p-i-n Structures 186
7.8.2 Three-Terminal Structures 188
7.8.3 Smaller Structures 188
7.8.4 MOS Capacitors 189
7.8.5 MQW Structures 190
7.9 High-Bandwidth Modulators 190
7.9.1 Ring Resonator 190
7.9.2 MZ Modulators at 10 Gb/s and Above 191
7.9.3 Microring Resonators 192
7.9.4 Reverse Biased p-n Diode 193
7.10 Performance of EO Modulators 193
Problems 193
References 194
Silicon Photodetectors 197
8.1 Introduction 197
8.2 Optical Detection 199
8.3 Important Characteristics of Photodetectors 202
8.3.1 Quantum Efficiency 202
8.3.2 Responsivity 204
8.3.3 Bandwidth 206
8.3.4 Gain 206
8.3.5 Noise and Noise-Equivalent Power 206
8.3.6 Wavelength Sensitivity Range 209
8.3.7 Cost and Yield 209
8.3.8 Other Characteristics 210
8.4 Examples of Types of Photodetectors 210
8.5 Examples of Photodiodes in Standard
Silicon Technology 216
8.6 Phototransistors in Standard Silicon Technology 221
8.7 CMOS and BiCMOS 223
8.8 Silicon-on-Insulator (SOI) 223
8.9 Photodetectors Using Heteroepitaxy 227
8.9.1 Si and SiGe Multiple Quantum Wells 227
8.9.2 Ge Detectors on Si 232
8.9.3 Related Theoretical Discussion 239
Problems 242
References 244
Raman Lasers 249
9.1 Introduction 249
9.2 Raman Scattering: Basic Concepts 250
9.2.1 Stokes and Anti-Stokes Lines 250
9.2.2 Stimulated Raman Scattering 252
xii Contents
9.3 Simplified Theory of Raman Scattering 252
9.4 Raman Effect in Silicon 255
9.5 Raman Gain Coefficient 256
9.5.1 Mathematical Model 256
9.5.2 Simulation Parameters 257
9.5.3 Threshold Power 257
9.6 Continuous-Wave Raman Laser 259
9.7 Further Developments 262
Problems 262
References 263
10 Guided Lightwaves: Introduction 265
10.1 Introduction 265
10.2 Ray Optic Theory for Light Guidance 265
10.3 Reflection Coefficients 266
10.4 Modes of a Planar Waveguide 268
10.4.1 The Symmetrical Planar Waveguide 269
10.4.2 The Asymmetric Waveguide 270
10.4.3 Single-Mode Condition 270
10.4.4 Effective Index of a Mode 271
10.5 Wave Theory of Light Guides 271
10.5.1 Wave Equation in a Dielectric 271
10.5.2 The Ideal Slab Waveguide 272
10.6 3D Optical Waveguides 278
10.6.1 Practical Waveguiding Geometries 278
10.6.2 Ray Optic Approach for 3D Guides 281
10.6.3 Approximate Analyses of Guided Modes 281
10.7 Loss Mechanisms in Waveguides 287
10.7.1 Scattering Loss 287
10.7.2 Absorption Loss 289
10.7.3 Radiation Loss 290
10.7.4 Coupling Loss 292
10.8 Coupling to Optical Devices 292
10.8.1 Grating Couplers 293
10.8.2 Butt Coupling and End-fire Coupling 294
10.9 Tapers 297
299
Suggested Readings ™,
Problems
References
11 Principle of Planar Waveguide Devices
11.1 Introduction
11.2 Model for Mode Coupling
11.3 Directional Coupler
11.3.1 Phase-matched Directional Coupler
11.3.2 Non-phase-matched Coupler
11.4 Distributed Bragg Reflector
303
303
303
307
307
309
310
Contents xiii
11.4.1 Phase-Matched Grating 310
11.4.2 Non-phase-matching 314
11.5 Some Useful Planar Devices 315
11.5.1 Splitters 315
11.5.2 Directional Coupler 316
11.5.3 Mach-Zehnder Interferometer 317
11.5.4 Fabry-Perot Resonators 319
11.5.5 Bragg Gratings 321
11.5.6 Dielectric Mirrors 323
11.5.7 Ring Resonators 324
11.5.8 Multiple-Ring Resonators 327
11.5.9 Variable Optical Attenuator 327
Problems 329
References 330
12 Waveguides for Dense Wavelength-Division Multiplexing
(DWDM) Systems 333
12.1 Introduction 333
12.2 Structure and Operation of AWGs 334
12.2.1 Structure and Working Principle 334
12.2.2 Analysis 336
12.3 AWG Characteristics 337
12.3.1 Tuning and Free Spectral Range 337
12.3.2 Frequency Response 340
12.3.3 Channel Cross-talk 341
12.3.4 Polarization Dependence 341
12.4 Methods for Improving Performance 341
12.4.1 Flat Frequency Response 341
12.4.2 Polarization Independence 342
12.4.3 Temperature Insensitivity 343
12.5 Applications of AWGs 344
12.5.1 Demultiplexers and Multiplexers 344
12.5.2 Wavelength Routers 344
12.5.3 Multiwavelength Receivers and Transmitters 345
12.5.4 Add-Drop Multiplexers 346
12.5.5 Optical Cross-connects: Reconfigurable Wavelength
Routers (WRs) 346
12.5.6 Dispersion Equalizer 347
12.6 PHASAR-Based Devices on Different Materials 348
12.6.1 Silica on Silicon 348
12.6.2 Silicon-on-Insulator 349
12.6.3 Silicon Oxynitride 349
12.7 Echelle Grating 349
Problems 350
References 350
xiv Contents
13 Fabrication Techniques and Materials Systems 353
13.1 Introduction 353
13.2 Planar Processing 354
13.3 Substrate Growth and Preparation 354
13.3.1 Deposition and Growth of Materials 355
13.3.2 Epitaxial Growth 359
13.3.3 Molecular Beam Epitaxy (MBE) 360
13.4 Material Modification 361
13.4.1 Diffusion 361
13.4.2 Ion Implantation 363
13.5 Etching 366
13.5.1 Wet Etching 366
13.5.2 Dry Etching 366
13.5.3 Maskless Etching 368
13.5.4 Reactive Etching 369
13.6 Lithography 370
13.6.1 Mask Fabrication 370
13.6.2 Pattern Transfer 370
13.7 Fabrication of Waveguides 371
13.7.1 Silica on Silicon 372
13.7.2 Formation of Waveguides Using Silicon-on-Insulator 373
13.8 Grating Formation Process 376
13.8.1 Photosensitivity of Glass 376
13.8.2 Grating Formation 377
13.9 Materials Systems for Waveguide Formation 379
13.9.1 General Considerations 379
13.9.2 Characteristics of Guides and Simple Planar Components 380
13.9.3 A Comparative Study of Materials Systems 392
Problems 395
References 396
Suggested Reading 400
Appendix A: k.p Method 403
Appendix B: Values of Parameters 421
Index 423
|
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| indexdate | 2024-07-09T22:48:41Z |
| institution | BVB |
| isbn | 9780470517505 |
| language | English |
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| series2 | Wiley series in materials for electronic and optoelectronic applications |
| spelling | Deen, M. Jamal Verfasser aut Silicon photonics fundamentals and devices M. Jamal Deen; P. K. Basu 1. publ. Chichester Wiley 2012 XIX, 433 S. zahlr. graph. Darst. txt rdacontent n rdamedia nc rdacarrier Wiley series in materials for electronic and optoelectronic applications Optische Eigenschaft (DE-588)4123887-4 gnd rswk-swf Silicium (DE-588)4077445-4 gnd rswk-swf Optoelektronisches Bauelement (DE-588)4043689-5 gnd rswk-swf Silicium (DE-588)4077445-4 s Optoelektronisches Bauelement (DE-588)4043689-5 s DE-604 Optische Eigenschaft (DE-588)4123887-4 s Basu, Prasanta Kumar Verfasser aut HBZ Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=020723570&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Deen, M. Jamal Basu, Prasanta Kumar Silicon photonics fundamentals and devices Optische Eigenschaft (DE-588)4123887-4 gnd Silicium (DE-588)4077445-4 gnd Optoelektronisches Bauelement (DE-588)4043689-5 gnd |
| subject_GND | (DE-588)4123887-4 (DE-588)4077445-4 (DE-588)4043689-5 |
| title | Silicon photonics fundamentals and devices |
| title_auth | Silicon photonics fundamentals and devices |
| title_exact_search | Silicon photonics fundamentals and devices |
| title_full | Silicon photonics fundamentals and devices M. Jamal Deen; P. K. Basu |
| title_fullStr | Silicon photonics fundamentals and devices M. Jamal Deen; P. K. Basu |
| title_full_unstemmed | Silicon photonics fundamentals and devices M. Jamal Deen; P. K. Basu |
| title_short | Silicon photonics |
| title_sort | silicon photonics fundamentals and devices |
| title_sub | fundamentals and devices |
| topic | Optische Eigenschaft (DE-588)4123887-4 gnd Silicium (DE-588)4077445-4 gnd Optoelektronisches Bauelement (DE-588)4043689-5 gnd |
| topic_facet | Optische Eigenschaft Silicium Optoelektronisches Bauelement |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=020723570&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| work_keys_str_mv | AT deenmjamal siliconphotonicsfundamentalsanddevices AT basuprasantakumar siliconphotonicsfundamentalsanddevices |