Rare-earth implanted MOS devices for silicon photonics: microstructural, electrical and optoelectronic properties
Gespeichert in:
| Hauptverfasser: | , |
|---|---|
| Format: | Buch |
| Sprache: | English |
| Veröffentlicht: |
Berlin [u.a.]
Springer
2010
|
| Schriftenreihe: | Springer series in materials science
142 |
| Schlagworte: | |
| Online-Zugang: | Inhaltstext Inhaltsverzeichnis |
| Beschreibung: | Literaturangaben |
| Beschreibung: | XVIII, 173 S. Ill., graph. Darst. |
| ISBN: | 9783642144462 |
Internformat
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Datensatz im Suchindex
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CONTENTS 1 SILICON-BASED LIGHT EMISSION 1 1.1 HISTORICAL REMARKS 1 1.2
ELECTROLUMINESCENCE FROM SI-BASED, MOS-TYPE LIGHT EMITTERS 3 2
MICROSTRUCTURE 5 2. 1 DEVICE STRUCTURE AND FABRICATION 5 2.1.1 LAYOUT 5
2.1.2 RARE EARTH IMPLANTATION 7 2.1.3 ANNEALING CONDITIONS 9 2.2 POINT
DEFECTS AND DIFFUSION 10 2.2.1 INTRINSIC AND IMPLANTATION INDUCED
DEFECTS IN SIO2 10 2.2.2 HYDROGEN AND OTHER DEFECTS IN SION 12 2.2.3
DIFFUSION OF RARE EARTH ATOMS IN SIO 2 15 2.3 CLUSTER FORMATION AND
GROWTH 17 2.3.1 MORPHOLOGY AND SIZE DISTRIBUTION 17 2.3.2 THE OXIDATION
STATE OF RARE EARTH CLUSTERS 21 3 ELECTRICAL PROPERTIES 23 3. 1 CHARGE
INJECTION AND TRANSPORT IN INSULATORS 23 3.1.1 THE MOS STRUCTURE UNDER
FOWLER-NORDHEIM INJECTION 23 3.1.2 HOT ELECTRONS IN SIO 2 27 3.1.3
CHARGE TRAPPING AND DE-TRAPPING IN MNOS SYSTEMS 29 3.2 RARE EARTH
IMPLANTED UNSTRESSED LIGHT EMITTERS 31 3.2.1 THE UNIMPLANTED STATE 31
3.2.2 ANNEALING DEPENDENCE 36 3.2.3 CONCENTRATION DEPENDENCE 38 3.3 RARE
EARTH IMPLANTED LIGHT EMITTERS UNDER CONSTANT CURRENT INJECTION 40 3.3.1
LOW AND HIGH INJECTION CURRENTS 40 3.3.2 CHARGE TRAPPING IN UNIMPLANTED
AND RE-IMPLANTED STRUCTURES 41 3.3. BIBLIOGRAFISCHE INFORMATIONEN
HTTP://D-NB.INFO/1003553087 DIGITALISIERT DURCH XI I CONTENTS 3.4 THE
CHARGE TRAPPING AND DEFECT SHELL MODEL 46 3.4.1 BEFORE CHARGE INJECTION
47 3.4.2 PHYSICAL PROCESSES UNDER HIGH ELECTRIC FIELDS 49 3.4.3 THE
DIFFERENT PHASES OF CHARGE INJECTION 50 4 ELECTROLUMINESCENCE SPECTRA 53
4. 1 SPECTRAL FEATURES 53 4.1.1 4F INTRASHELL TRANSITIONS IN TRIVALENT
RARE EARTH IONS 53 4.1.2 ELECTROLUMINESCENCE AND DECAY TIME MEASUREMENT
TECHNIQUES 56 4.1.3 ELECTROLUMINESCENCE OF UNIMPLANTED MOS STRUCTURES 58
4.1.4 ELECTROLUMINESCENCE SPECTRA OF RARE EARTH IONS IN SILICON DIOXIDE
59 4.2 INJECTION CURRENT DEPENDENCE 67 4.2.1 THE EXCITATION CROSS
SECTION 67 4.2.2 COLOUR SHIFT OF THE ELECTROLUMINESCENCE SPECTRUM 69 4.3
CONCENTRATION QUENCHING 72 4.3.1 THE GENERAL CASE 72 4.3.2 CROSS
RELAXATION 74 4.3.3 EUROPIUM: THE INTERPLAY BETWEEN DI- AND TRIVALENT
IONS 77 4.4 ANNEALING DEPENDENCE 79 4.4.1 SHORT TIME VS. LONG TIME
ANNEALING 79 4.4.2 SPECTRAL SHIFTS WITH CLUSTER EVOLUTION 82 5
ELECTROLUMINESCENCE EFFICIENCY 85 5. 1 GENERAL CONSIDERATIONS 85 5.1.1
DEFINITION OF EFFICIENCY 85 5.1.2 EFFICIENCY MEASUREMENT 87 5.1.3
PUMPING OF A TWO-LEVEL SYSTEM 88 5.1.4 STRATEGIES FOR EFFICIENCY TUNING
90 5.2 GEOMETRY AND MATERIAL ASPECTS 91 5.2.1 COMPARISON BETWEEN
DIFFERENT RARE EARTH ELEMENTS 91 5.2. CONTENTS XIII 6 STABILITY AND
DEGRADATION 117 6.1 ELECTRICAL DEGRADATION 117 6.1.1 WEAR-OUT MECHANISMS
IN MOS STRUCTURES 117 6.1.2 STATISTICAL DESCRIPTION OF THE BREAKDOWN 119
6.1.3 CHARGE-TO-BREAKDOWN VALUES UNDER CONSTANT CURRENT INJECTION 121
6.2 ELECTROLUMINESCENCE QUENCHING 123 6.2.1 THE ELECTROLUMINESCENCE
QUENCHING CROSS-SECTION 123 6.2.2 THE ELECTROLUMINESCENCE QUENCHING
MODEL 124 6.2.3 THE ELECTROLUMINESCENCE REACTIVATION EXPERIMENT 126
6.2.4 TEMPERATURE-DEPENDENT ELECTROLUMINESCENCE QUENCHING 129 6.2.5 THE
ANOMALOUS ELECTROLUMINESCENCE QUENCHING BEHAVIOUR OF EU 130 6.2.6
QUALITATIVE MODEL OF THE ELECTROLUMINESCENCE RISE PHENOMENON 135 6.3
LOCOS PROCESSING AND THE USE OF DIELECTRIC BUFFER LAYERS 139 6.4
POTASSIUM CODOPING 141 7 APPLICATIONS 147 7.1 REQUIREMENTS FOR SI-BASED
LIGHT EMITTERS 147 7.2 SI-BASED OPTICAL BIOSENSING 149 7.2.1
INTRODUCTION 149 7.2.2 SI-BASED MATERIALS AS PASSIVE TRANSDUCERS 150
7.2.3 THE CONCEPT OF DIRECT FLUORESCENCE ANALYSIS 152 7.2.4 BIOSENSING
WITH SI-BASED, INTEGRATED PHOTONIC CIRCUITS 155 REFERENCES 159 INDEX 171 |
| any_adam_object | 1 |
| author | Rebohle, Lars 1970- Skorupa, Wolfgang |
| author_GND | (DE-588)121798593 |
| author_facet | Rebohle, Lars 1970- Skorupa, Wolfgang |
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| author_sort | Rebohle, Lars 1970- |
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| classification_rvk | UQ 1100 |
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| dewey-search | 621.38152 |
| dewey-sort | 3621.38152 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Maschinenbau / Maschinenwesen Physik Elektrotechnik / Elektronik / Nachrichtentechnik |
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| spelling | Rebohle, Lars 1970- Verfasser (DE-588)121798593 aut Rare-earth implanted MOS devices for silicon photonics microstructural, electrical and optoelectronic properties Lars Rebohle ; Wolfgang Skorupa Berlin [u.a.] Springer 2010 XVIII, 173 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Springer series in materials science 142 Literaturangaben MOS (DE-588)4130209-6 gnd rswk-swf Seltenerdmetall (DE-588)4132099-2 gnd rswk-swf Photonik (DE-588)4243979-6 gnd rswk-swf Siliciumdioxid (DE-588)4077447-8 gnd rswk-swf Ionenimplantation (DE-588)4027606-5 gnd rswk-swf Elektrolumineszenz (DE-588)4151823-8 gnd rswk-swf MOS (DE-588)4130209-6 s Seltenerdmetall (DE-588)4132099-2 s Siliciumdioxid (DE-588)4077447-8 s Ionenimplantation (DE-588)4027606-5 s Elektrolumineszenz (DE-588)4151823-8 s Photonik (DE-588)4243979-6 s DE-604 Skorupa, Wolfgang Verfasser aut Springer series in materials science 142 (DE-604)BV000683335 142 X:MVB text/html http://deposit.dnb.de/cgi-bin/dokserv?id=3493172&prov=M&dok_var=1&dok_ext=htm Inhaltstext DNB Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=020715705&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Rebohle, Lars 1970- Skorupa, Wolfgang Rare-earth implanted MOS devices for silicon photonics microstructural, electrical and optoelectronic properties Springer series in materials science MOS (DE-588)4130209-6 gnd Seltenerdmetall (DE-588)4132099-2 gnd Photonik (DE-588)4243979-6 gnd Siliciumdioxid (DE-588)4077447-8 gnd Ionenimplantation (DE-588)4027606-5 gnd Elektrolumineszenz (DE-588)4151823-8 gnd |
| subject_GND | (DE-588)4130209-6 (DE-588)4132099-2 (DE-588)4243979-6 (DE-588)4077447-8 (DE-588)4027606-5 (DE-588)4151823-8 |
| title | Rare-earth implanted MOS devices for silicon photonics microstructural, electrical and optoelectronic properties |
| title_auth | Rare-earth implanted MOS devices for silicon photonics microstructural, electrical and optoelectronic properties |
| title_exact_search | Rare-earth implanted MOS devices for silicon photonics microstructural, electrical and optoelectronic properties |
| title_full | Rare-earth implanted MOS devices for silicon photonics microstructural, electrical and optoelectronic properties Lars Rebohle ; Wolfgang Skorupa |
| title_fullStr | Rare-earth implanted MOS devices for silicon photonics microstructural, electrical and optoelectronic properties Lars Rebohle ; Wolfgang Skorupa |
| title_full_unstemmed | Rare-earth implanted MOS devices for silicon photonics microstructural, electrical and optoelectronic properties Lars Rebohle ; Wolfgang Skorupa |
| title_short | Rare-earth implanted MOS devices for silicon photonics |
| title_sort | rare earth implanted mos devices for silicon photonics microstructural electrical and optoelectronic properties |
| title_sub | microstructural, electrical and optoelectronic properties |
| topic | MOS (DE-588)4130209-6 gnd Seltenerdmetall (DE-588)4132099-2 gnd Photonik (DE-588)4243979-6 gnd Siliciumdioxid (DE-588)4077447-8 gnd Ionenimplantation (DE-588)4027606-5 gnd Elektrolumineszenz (DE-588)4151823-8 gnd |
| topic_facet | MOS Seltenerdmetall Photonik Siliciumdioxid Ionenimplantation Elektrolumineszenz |
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