Semiconductor power devices: physics, characteristics, reliability
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| Format: | Buch |
|---|---|
| Sprache: | English |
| Veröffentlicht: |
Heidelberg [u.a.]
Springer
2011
|
| Schlagworte: | |
| Online-Zugang: | Inhaltstext Inhaltsverzeichnis |
| Beschreibung: | XII, 536 S. Ill., graph. Darst. |
| ISBN: | 9783642111242 |
Internformat
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Datensatz im Suchindex
| _version_ | 1805094890072178688 |
|---|---|
| adam_text |
IMAGE 1
CONTENTS
1 POWER SEMICONDUCTOR DEVICES - KEY COMPONENTS FOR EFFICIENT ELECTRICAL
ENERGY CONVERSION SYSTEMS 1
1 . 1 SYSTEMS, POWER CONVERTERS, AND POWER SEMICONDUCTOR DEVICES 1 1.1.1
BASIC PRINCIPLES OF POWER CONVERTERS 3
1.1.2 TYPES OF POWER CONVERTERS AND SELECTION OF POWER DEVICES 4
1.2 OPERATING AND SELECTING POWER SEMICONDUCTORS 7
1.3 APPLICATIONS OF POWER SEMICONDUCTORS 10
REFERENCES 14
2 SEMICONDUCTOR PROPERTIES 17
2.1 INTRODUCTION 17
2.2 CRYSTAL STRUCTURE 19
2.3 ENERGY GAP AND INTRINSIC CONCENTRATION 21
2.4 ENERGY BAND STRUCTURE AND PARTICLE PROPERTIES OF CARRIERS . . 26
2.5 THE DOPED SEMICONDUCTOR 30
2.6 CURRENT TRANSPORT 39
2.6.1 CARRIER MOBILITIES AND FIELD CURRENTS 39
2.6.2 HIGH-FIELD DRIFT VELOCITIES 45
2.6.3 DIFFUSION OF CARRIERS AND CURRENT TRANSPORT EQUATIONS 46 2.7
RECOMBINATION-GENERATION AND LIFETIME OF NON-EQUILIBRIUM CARRIERS 48
2.7.1 INTRINSIC RECOMBINATION MECHANISMS 50
2.7.2 RECOMBINATION AND GENERATION AT RECOMBINATION CENTERS 51
2.8 IMPACT IONIZATION 60
2.9 BASIC EQUATIONS OF SEMICONDUCTOR DEVICES 66
2.10 SIMPLE CONCLUSIONS 69
REFERENCES 72
3 PN-JUNCTIONS 77
3.1 THE PN-JUNCTION IN THERMAL EQUILIBRIUM 78
3.1.1 THE ABRUPT STEP JUNCTION 80
3.1.2 GRADED JUNCTIONS 86
BIBLIOGRAFISCHE INFORMATIONEN HTTP://D-NB.INFO/1000032051
DIGITALISIERT DURCH
IMAGE 2
CONTENTS
3.2 CURRENT-VOLTAGE CHARACTERISTICS OF THE PN-JUNCTION 89
3.3 BLOCKING CHARACTERISTICS AND BREAKDOWN OF THE PN-JUNCTION 98
3.3.1 BLOCKING CURRENT 98
3.3.2 AVALANCHE MULTIPLICATION AND BREAKDOWN VOLTAGE . . 101 3.3.3
BLOCKING CAPABILITY WITH WIDE-GAP SEMICONDUCTORS . 110 3.4 INJECTION
EFFICIENCY OF EMITTER REGIONS I LL
3.5 CAPACITANCE OF PN-JUNCTIONS 118
REFERENCES 120
SHORT INTRODUCTION TO POWER DEVICE TECHNOLOGY 1 23
4.1 CRYSTAL GROWTH 123
4.2 NEUTRON TRANSMUTATION FOR ADJUSTMENT OF THE WAFER DOPING . 126 4.3
EPITAXIAL GROWTH 128
4.4 DIFFUSION 129
4.5 ION IMPLANTATION 134
4.6 OXIDATION AND MASKING 139
4.7 EDGE TERMINATIONS 142
4.7.1 BEVELLED TERMINATION STRUCTURES 142
4.7.2 PLANAR JUNCTION TERMINATION STRUCTURES 144
4.7.3 JUNCTION TERMINATION FOR BIDIRECTIONAL BLOCKING DEVICES 146
4.8 PASSIVATION 147
4.9 RECOMBINATION CENTERS 148
4.9.1 GOLD AND PLATINUM AS RECOMBINATION CENTERS . . . 148 4.9.2
RADIATION-INDUCED RECOMBINATION CENTERS 151 4.9.3 RADIATION-ENHANCED
DIFFUSION OF PT AND PD 154
REFERENCES 155
PIN-DIODES 159
5.1 STRUCTURE OF THE PIN-DIODE 159
5.2 I-V CHARACTERISTIC OF THE PIN-DIODE 160
5.3 DESIGN AND BLOCKING VOLTAGE OF THE PIN-DIODE 162
5.4 FORWARD CONDUCTION BEHAVIOR 167
5.4.1 CARRIER DISTRIBUTION 167
5.4.2 JUNCTION VOLTAGES 170
5.4.3 VOLTAGE DROP ACROSS THE MIDDLE REGION 172
5.4.4 VOLTAGE DROP IN THE HALL APPROXIMATION 173
5.4.5 EMITTER RECOMBINATION, EFFECTIVE CARRIER LIFETIME, AND FORWARD
CHARACTERISTIC 175
5.4.6 TEMPERATURE DEPENDENCY OF THE FORWARD CHARACTERISTICS 183 5.5
RELATION BETWEEN STORED CHARGE AND FORWARD VOLTAGE 184 5.6 TURN-ON
BEHAVIOR OF POWER DIODES 185
5.7 REVERSE RECOVERY OF POWER DIODES 188
5.7.1 DEFINITIONS 188
5.7.2 REVERSE RECOVERY RELATED POWER LOSSES 194
IMAGE 3
CONTENTS IX
5.7.3 REVERSE RECOVERY: CHARGE DYNAMIC IN THE DIODE . . . 198 5.7.4 FAST
DIODES WITH OPTIMIZED REVERSE RECOVERY BEHAVIOR 206 5.8 OUTLOOK 222
REFERENCES 223
6 SCHOTTKY DIODES 225
6. 1 ASPECTS OF THE PHYSICS OF THE METAL-SEMICONDUCTOR JUNCTION 225
6.2 CURRENT-VOLTAGE CHARACTERISTICS OF THE SCHOTTKY JUNCTION . . . 227
6.3 STRUCTURE OF SCHOTTKY DIODES 230
6.4 OHMIC VOLTAGE DROP OF A UNIPOLAR DEVICE 230
6.5 SCHOTTKY DIODES BASED ON SIC 234
REFERENCES 239
7 BIPOLAR TRANSISTORS 241
7.1 FUNCTION OF THE BIPOLAR TRANSISTOR 241
7.2 STRUCTURE OF THE BIPOLAR POWER TRANSISTOR 243
7.3 I-V CHARACTERISTIC OF THE POWER TRANSISTOR 244
7.4 BLOCKING BEHAVIOR OF THE BIPOLAR POWER TRANSISTOR 245 7.5 CURRENT
GAIN OF THE BIPOLAR TRANSISTOR 247
7.6 BASE WIDENING, FIELD REDISTRIBUTION, AND SECOND BREAKDOWN 251
7.7 LIMITS OF THE SILICON BIPOLAR TRANSISTOR 254
7.8 SIC BIPOLAR TRANSISTOR 255
REFERENCES 256
8 THYRISTORS 257
8.1 STRUCTURE AND MODE OF FUNCTION 257
8.2 I-V CHARACTERISTIC OF THE THYRISTOR 260
8.3 BLOCKING BEHAVIOR OF THE THYRISTOR 262
8.4 THE FUNCTION OF EMITTER SHORTS 264
8.5 MODES TO TRIGGER A THYRISTOR 265
8.6 TRIGGER FRONT SPREADING 266
8.7 FOLLOW-UP TRIGGERING AND AMPLIFYING GATE 267
8.8 THYRISTOR TURN-OFF AND RECOVERY TIME 270
8.9 THETRIAC 272
8.10 THE GATE TURN-OFF THYRISTOR (GTO) 273
8.11 THE GATE-COMMUTATED THYRISTOR (GCT) 279
REFERENCES 281
9 MOS TRANSISTORS 283
9.1 FUNCTION PRINCIPLE OF THE MOSFET 283
9.2 STRUCTURE OF POWER MOSFETS 285
9.3 CURRENT-VOLTAGE CHARACTERISTICS OF MOS TRANSISTORS 287 9.4
CHARACTERISTICS OF THE MOSFET CHANNEL 288
9.5 THE OHMIC REGION 292
9.6 COMPENSATION STRUCTURES IN MODERN MOSFETS 293
IMAGE 4
N CONTENTS
9.7 SWITCHING PROPERTIES OF THE MOSFET 298
9.8 SWITCHING LOSSES OF THE MOSFET 302
9.9 SAFE OPERATING AREA OF THE MOSFET 303
9.10 THE INVERSE DIODE OF THE MOSFET 305
9.11 SIC FIELD EFFECT DEVICES 309
9.12 OUTLOOK 312
REFERENCES 312
10 IGBTS 315
10.1 MODE OF FUNCTION 315
10.2 THE I-V CHARACTERISTIC OF THE IGBT 317
10.3 THE SWITCHING BEHAVIOR OF THE IGBT 319
10.4 THE BASIC TYPES: PT-IGBT AND NPT-IGBT 321
10.5 PLASMA DISTRIBUTION IN THE IGBT 325
10.6 MODERN IGBTS WITH INCREASED CHARGE CARRIER DENSITY . . . 327
10.6.1 PLASMA ENHANCEMENT BY HIGH N-EMITTER EFFICIENCY . . 327 10.6.2
THE "LATCH-UP FREE CELL GEOMETRY" 331
10.6.3 THE EFFECT OF THE "HOLE BARRIER" 332
10.6.4 COLLECTOR SIDE BUFFER LAYERS 334
10.7 IGBTS WITH BIDIRECTIONAL BLOCKING CAPABILITY 335
10.8 REVERSE CONDUCTING IGBTS 337
10.9 OUTLOOK 340
REFERENCES 340
11 PACKAGING AND RELIABILITY OF POWER DEVICES 343
11.1 THE CHALLENGE OF PACKAGING TECHNOLOGY 343
11.2 PACKAGE TYPES 344
11.2.1 CAPSULES 346
11.2.2 THE TO FAMILY AND ITS RELATIVES 348
11.2.3 MODULES 353
11.3 PHYSICAL PROPERTIES OF MATERIALS 358
11.4 THERMAL SIMULATION AND THERMAL EQUIVALENT CIRCUITS 360 1 1.4.1
TRANSFORMATION BETWEEN THERMO-DYNAMICAL AND ELECTRICAL PARAMETERS 360
11.4.2 ONE-DIMENSIONAL EQUIVALENT NETWORKS 367
11.4.3 THE THREE-DIMENSIONAL THERMAL NETWORK 369 11.4.4 THE TRANSIENT
THERMAL RESISTANCE 370
11.5 PARASITIC ELECTRICAL ELEMENTS IN POWER MODULES 373
11.5.1 PARASITIC RESISTANCES 373
11.5.2 PARASITIC INDUCTANCE 374
11.5.3 PARASITIC CAPACITIES 378
11.6 RELIABILITY 380
11.6.1 THE DEMAND FOR INCREASING RELIABILITY 380
11.6.2 HIGH TEMPERATURE REVERSE BIAS TEST 383
11.6.3 HIGH TEMPERATURE GATE STRESS TEST 385
11.6.4 TEMPERATURE HUMIDITY BIAS TEST 386
IMAGE 5
CONTENTS XI
11.6.5 HIGH TEMPERATURE AND LOW TEMPERATURE STORAGE TESTS 387
11.6.6 TEMPERATURE CYCLING AND TEMPERATURE SHOCK TEST . . 388 11.6.7
POWER CYCLING TEST 390
11.6.8 ADDITIONAL RELIABILITY TESTS 410
11.6.9 STRATEGIES FOR ENHANCED RELIABILITY 411
11.7 FUTURE CHALLENGES 412
REFERENCES 416
12 DESTRUCTIVE MECHANISMS IN POWER DEVICES 419
12.1 THERMAL BREAKDOWN - FAILURES BY EXCESS TEMPERATURE . . . 419 12.2
SURGE CURRENT 421
12.3 OVERVOLTAGE - VOLTAGE ABOVE BLOCKING CAPABILITY 426
12.4 DYNAMIC AVALANCHE 432
12.4.1 DYNAMIC AVALANCHE IN BIPOLAR DEVICES 432
12.4.2 DYNAMIC AVALANCHE IN FAST DIODES 433
12.4.3 DIODE STRUCTURES WITH HIGH DYNAMIC AVALANCHE CAPABILITY 442
12.4.4 DYNAMIC AVALANCHE: FURTHER TASKS 446
12.5 EXCEEDING THE MAXIMUM TURN-OFF CURRENT OF GTOS 446
12.6 SHORT-CIRCUIT AND OVER-CURRENT IN IGBTS 447
12.6.1 SHORT-CIRCUIT TYPES I, II, AND III 447
12.6.2 THERMAL AND ELECTRICAL STRESS IN SHORT CIRCUIT . . . 452
12.6.3 TURN-OFF OF OVER-CURRENT AND DYNAMIC AVALANCHE . . 460 12.7
COSMIC RAY FAILURES 463
12.8 FAILURE ANALYSIS 468
REFERENCES 470
13 POWER DEVICE-INDUCED OSCILLATIONS AND ELECTROMAGNETIC DISTURBANCES
475
13.1 FREQUENCY RANGE OF ELECTROMAGNETIC DISTURBANCES 475
13.2 LC OSCILLATIONS 477
13.2.1 TURN-OFF OSCILLATIONS WITH IGBTS CONNECTED IN PARALLEL 477
13.2.2 TURN-OFF OSCILLATIONS WITH SNAPPY DIODES 480
13.3 TRANSIT-TIME OSCILLATIONS 483
13.3.1 PLASMA-EXTRACTION TRANSIT-TIME (PETT) OSCILLATIONS . 483 13.3.2
DYNAMIC IMPACT-IONIZATION TRANSIT-TIME (IMPATT) OSCILLATIONS 491
REFERENCES 495
IMAGE 6
XII CONTENTS
14 POWER ELECTRONIC SYSTEMS 497
14.1 DEFINITION AND BASIC FEATURES 497
14.2 MONOLITHICALLY INTEGRATED SYSTEMS - POWER ICS 499
14.3 SYSTEM INTEGRATION ON PRINTED CIRCUIT BOARD 503
14.4 HYBRID INTEGRATION 505
REFERENCES 512
APPENDIX A: MODELING PARAMETERS OF CARRIER MOBILITIES IN SI AND4H-SIC
515
APPENDIX B: AVALANCHE MULTIPLICATION FACTORS AND EFFECTIVE IONIZATION
RATE 517
APPENDIX C: THERMAL PARAMETERS OF IMPORTANT MATERIALS IN PACKAGING
TECHNOLOGY 521
APPENDIX D: ELECTRIC PARAMETERS OF IMPORTANT MATERIALS IN
PACKAGING TECHNOLOGY 523
APPENDIX E: OFTEN USED SYMBOLS 525
INDEX 529 |
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| discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
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| spellingShingle | Semiconductor power devices physics, characteristics, reliability Halbleiterbauelement (DE-588)4113826-0 gnd Leistungselektronik (DE-588)4035235-3 gnd Leistungshalbleiter (DE-588)4167286-0 gnd |
| subject_GND | (DE-588)4113826-0 (DE-588)4035235-3 (DE-588)4167286-0 |
| title | Semiconductor power devices physics, characteristics, reliability |
| title_auth | Semiconductor power devices physics, characteristics, reliability |
| title_exact_search | Semiconductor power devices physics, characteristics, reliability |
| title_full | Semiconductor power devices physics, characteristics, reliability Josef Lutz ... |
| title_fullStr | Semiconductor power devices physics, characteristics, reliability Josef Lutz ... |
| title_full_unstemmed | Semiconductor power devices physics, characteristics, reliability Josef Lutz ... |
| title_short | Semiconductor power devices |
| title_sort | semiconductor power devices physics characteristics reliability |
| title_sub | physics, characteristics, reliability |
| topic | Halbleiterbauelement (DE-588)4113826-0 gnd Leistungselektronik (DE-588)4035235-3 gnd Leistungshalbleiter (DE-588)4167286-0 gnd |
| topic_facet | Halbleiterbauelement Leistungselektronik Leistungshalbleiter |
| url | http://deposit.dnb.de/cgi-bin/dokserv?id=3423599&prov=M&dok_var=1&dok_ext=htm http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=020669461&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| work_keys_str_mv | AT lutzjosef semiconductorpowerdevicesphysicscharacteristicsreliability |