The physics of semiconductors: an introduction including nanophysics and applications
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Buch |
| Sprache: | English |
| Veröffentlicht: |
Berlin [u.a.]
Springer
2010
|
| Ausgabe: | 2. ed. |
| Schriftenreihe: | Graduate texts in physics
|
| Schlagworte: | |
| Online-Zugang: | Inhaltstext Inhaltsverzeichnis |
| Beschreibung: | XXXVII, 864 S. Ill., graph. Darst. |
| ISBN: | 9783642138836 |
Internformat
MARC
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| 245 | 1 | 0 | |a The physics of semiconductors |b an introduction including nanophysics and applications |c Marius Grundmann |
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Datensatz im Suchindex
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IMAGE 1
CONTENTS
1 INTRODUCTION 1
1.1 TIMETABLE 1
1.2 NOBEL PRIZE WINNERS 10
1.3 GENERAL INFORMATION 11
PART I FUNDAMENTALS
2 BONDS 19
2.1 INTRODUCTION 19
2.2 COVALENT BONDS 19
2.2.1 ELECTRON-PAIR BOND 19
2.2.2 SP 3 BONDS 19
2.2.3 SP 2 BONDS 23
2.3 IONIC BONDS 25
2.4 MIXED BONDS 27
2.5 METALLIC BONDING 30
2.6 VAN-DER-WAALS BONDS 30
2.7 HAMILTON OPERATOR OF THE SOLID 32
3 CRYSTALS 35
3.1 INTRODUCTION 35
3.2 CRYSTAL STRUCTURE 35
3.3 LATTICE 36
3.3.1 UNIT CELL 36
3.3.2 POINT GROUP 37
3.3.3 SPACE GROUP 39
3.3.4 2D BRAVAIS LATTICES 40
3.3.5 3D BRAVAIS LATTICES 40
3.3.6 POLYCRYSTALLINE SEMICONDUCTORS 45
3.3.7 AMORPHOUS SEMICONDUCTORS 45
3.4 IMPORTANT CRYSTAL STRUCTURES 47
3.4.1 ROCKSALT STRUCTURE 47
3.4.2 CSCL STRUCTURE 48
3.4.3 DIAMOND STRUCTURE 48
XI
BIBLIOGRAFISCHE INFORMATIONEN HTTP://D-NB.INFO/1002680425
DIGITALISIERT DURCH
IMAGE 2
XII CONTENTS
3.4.4 ZINCBLENDE STRUCTURE 49
3.4.5 WURTZITE STRUCTURE 50
3.4.6 CHALCOPYRITE STRUCTURE 51
3.4.7 FLUORITE STRUCTURE 53
3.4.8 DELAFOSSITE STRUCTURE 54
3.4.9 PEROVSKITE STRUCTURE 55
3.4.10 NIAS STRUCTURE 56
3.4.11 FURTHER STRUCTURES 56
3.5 POLYTYPISM 57
3.6 RECIPROCAL LATTICE 57
3.6.1 RECIPROCAL LATTICE VECTORS 59
3.6.2 MILLER INDICES 60
3.6.3 BRILLOUIN ZONE 62
3.7 ALLOYS 63
3.7.1 RANDOM ALLOYS 64
3.7.2 PHASE DIAGRAM 66
3.7.3 VIRTUAL CRYSTAL APPROXIMATION 68
3.7.4 LATTICE PARAMETER 68
3.7.5 ORDERING 69
4 DEFECTS 73
4.1 INTRODUCTION 73
4.2 POINT DEFECTS 73
4.2.1 POINT DEFECT TYPES 73
4.2.2 THERMODYNAMICS 74
4.2.3 DIFFUSION 78
4.2.4 DOPANT DISTRIBUTION 80
4.2.5 LARGE CONCENTRATION EFFECTS 84
4.3 DISLOCATIONS 87
4.3.1 DISLOCATION TYPES 88
4.3.2 VISUALIZATION OF DISLOCATIONS BY ETCHING 92
4.3.3 IMPURITY HARDENING 94
4.4 EXTENDED DEFECTS 95
4.4.1 MICRO-CRACKS 95
4.4.2 STACKING FAULTS 95
4.4.3 GRAIN BOUNDARIES 97
4.4.4 ANTIPHASE AND INVERSION DOMAINS 99
4.5 DISORDER 102
5 MECHANICAL PROPERTIES 103
5.1 INTRODUCTION 103
5.2 LATTICE VIBRATIONS 103
5.2.1 MONOATOMIC LINEAR CHAIN 103
5.2.2 DIATOMIC LINEAR CHAIN 106
5.2.3 LATTICE VIBRATIONS OF A THREE-DIMENSIONAL CRYSTAL. 110
IMAGE 3
CONTENTS XIII
5.2.4 DENSITY OF STATES 112
5.2.5 PHONONS 114
5.2.6 LOCALIZED VIBRATIONAL MODES 114
5.2.7 PHONONS IN ALLOYS 116
5.2.8 ELECTRIC FIELD CREATED BY OPTICAL PHONONS 119
5.3 ELASTICITY 122
5.3.1 THERMAL EXPANSION 122
5.3.2 STRESS-STRAIN RELATION 122
5.3.3 BIAXIAL STRAIN 127
5.3.4 THREE-DIMENSIONAL STRAIN 128
5.3.5 SUBSTRATE BENDING 130
5.3.6 SCROLLING 132
5.3.7 CRITICAL THICKNESS 133
5.4 CLEAVING 137
BAND STRUCTURE 139
6.1 INTRODUCTION 139
6.2 ELECTRONS IN A PERIODIC POTENTIAL 139
6.2.1 BLOCH'S THEOREM 139
6.2.2 FREE-ELECTRON DISPERSION 140
6.2.3 KRONIG-PENNEY MODEL 142
6.2.4 LATTICE VECTOR EXPANSION 144
6.2.5 KRAMER'S DEGENERACY 147
6.3 BAND STRUCTURE OF SELECTED SEMICONDUCTORS 147
6.3.1 SILICON 147
6.3.2 GERMANIUM 147
6.3.3 GAAS 148
6.3.4 GAP 149
6.3.5 GAN 149
6.3.6 LEAD SALTS 149
6.3.7 CHALCOPYRITES 149
6.3.8 DELAFOSSITES 151
6.3.9 PEROVSKITES 152
6.4 ALLOY SEMICONDUCTORS 153
6.5 AMORPHOUS SEMICONDUCTORS 155
6.6 SYSTEMATICS OF SEMICONDUCTOR BAND GAPS 156
6.7 TEMPERATURE DEPENDENCE OF THE BAND GAP 158
6.8 ELECTRON DISPERSION 161
6.8.1 EQUATION OF ELECTRON MOTION 161
6.8.2 EFFECTIVE MASS OF ELECTRONS 161
6.8.3 POLARON MASS 165
6.8.4 NONPARABOLICITY OF ELECTRON MASS 167
6.9 HOLES 168
6.9.1 HOLE CONCEPT 168
6.9.2 HOLE DISPERSION RELATION 169
6.9.3 VALENCE-BAND FINE STRUCTURE 173
IMAGE 4
XIV CONTENTS
6.10 STRAIN EFFECT ON THE BAND STRUCTURE 176
6.10.1 STRAIN EFFECT ON BAND EDGES 176
6.10.2 STRAIN EFFECT ON EFFECTIVE MASSES 179
6.10.3 INTERACTION WITH A LOCALIZED LEVEL 179
6.11 DENSITY OF STATES 179
6.11.1 GENERAL BAND STRUCTURE 179
6.11.2 FREE-ELECTRON GAS 180
7 ELECTRONIC DEFECT STATES 185
7.1 INTRODUCTION 185
7.2 FERMI DISTRIBUTION 185
7.3 CARRIER CONCENTRATION 187
7.4 INTRINSIC CONDUCTION 190
7.5 SHALLOW DEFECTS 193
7.5.1 DONORS 193
7.5.2 ACCEPTORS 202
7.5.3 COMPENSATION 206
7.5.4 MULTIPLE IMPURITIES 208
7.5.5 AMPHOTERIC IMPURITIES 210
7.5.6 HIGH DOPING 211
7.6 QUASI-FERMI LEVELS 215
7.7 DEEP LEVELS 216
7.7.1 CHARGE STATES 217
7.7.2 DOUBLE DONORS 218
7.7.3 DOUBLE ACCEPTORS 219
7.7.4 JAHN-TELLER EFFECT 221
7.7.5 NEGATIVE-?/ CENTER 221
7.7.6 DX CENTER 224
7.7.7 EL2 DEFECT 226
7.7.8 SEMI-INSULATING SEMICONDUCTORS 227
7.7.9 ISOELECTRONIC IMPURITIES 228
7.7.10 SURFACE STATES 230
7.8 HYDROGEN IN SEMICONDUCTORS 231
8 TRANSPORT 235
8.1 INTRODUCTION 235
8.2 CONDUCTIVITY 236
8.3 LOW-FIELD TRANSPORT 238
8.3.1 MOBILITY 238
8.3.2 MICROSCOPIC SCATTERING PROCESSES 239
8.3.3 IONIZED IMPURITY SCATTERING 239
8.3.4 DEFORMATION POTENTIAL SCATTERING 240
8.3.5 PIEZOELECTRIC POTENTIAL SCATTERING 241
8.3.6 POLAR OPTICAL SCATTERING 241
8.3.7 DISLOCATION SCATTERING 241
IMAGE 5
CONTENTS XV
8.3.8 GRAIN BOUNDARY SCATTERING 242
8.3.9 TEMPERATURE DEPENDENCE 243
8.3.10 DOPING DEPENDENCE 243
8.3.11 PIEZORESISTIVITY 246
8.4 HALL EFFECT 247
8.5 HIGH-FIELD TRANSPORT 251
8.5.1 DRIFT-SATURATION VELOCITY 251
8.5.2 NEGATIVE DIFFERENTIAL RESISTIVITY 252
8.5.3 VELOCITY OVERSHOOT 254
8.5.4 IMPACT IONIZATION 254
8.6 HIGH-FREQUENCY TRANSPORT 257
8.7 DIFFUSION 257
8.8 CONTINUITY EQUATION 259
8.9 HEAT CONDUCTION 259
8.10 COUPLED HEAT AND CHARGE TRANSPORT 261
8.10.1 SEEBECK EFFECT 261
8.10.2 PELTIER EFFECT 262
OPTICAL PROPERTIES 265
9.1 SPECTRAL REGIONS AND OVERVIEW 265
9.2 REFLECTION AND DIFFRACTION 266
9.3 ABSORPTION 268
9.4 ELECTRON-PHOTON INTERACTION 269
9.5 BAND-BAND TRANSITIONS 271
9.5.1 JOINT DENSITY OF STATES 271
9.5.2 DIRECT TRANSITIONS 272
9.5.3 INDIRECT TRANSITIONS 274
9.5.4 URBACH TAIL 278
9.5.5 INTRAVALENCE-BAND ABSORPTION 278
9.5.6 AMORPHOUS SEMICONDUCTORS 279
9.5.7 EXCITONS 280
9.5.8 PHONON BROADENING 283
9.5.9 EXCITON POLARITON 285
9.5.10 BOUND-EXCITON ABSORPTION 288
9.5.11 BIEXCITONS 290
9.5.12 TRIONS 290
9.5.13 BURSTEIN-MOSS SHIFT 291
9.5.14 BAND GAP RENORMALIZATION 292
9.5.15 ELECTRON-HOLE DROPLETS 293
9.5.16 TWO-PHOTON ABSORPTION 294
9.6 IMPURITY ABSORPTION 296
9.7 FREE-CARRIER ABSORPTION 299
9.8 LATTICE ABSORPTION 303
9.8.1 DIELECTRIC CONSTANT 304
9.8.2 RESTSTRAHLENBANDE 304
IMAGE 6
XVI CONTENTS
9.8.3 POLARITONS 304
9.8.4 PHONON-PLASMON COUPLING 307
10 RECOMBINATION 309
10.1 INTRODUCTION 309
10.2 BAND-BAND RECOMBINATION 309
10.2.1 SPONTANEOUS EMISSION 309
10.2.2 ABSORPTION 311
10.2.3 STIMULATED EMISSION 311
10.2.4 NET RECOMBINATION RATE 312
10.2.5 RECOMBINATION DYNAMICS 313
10.2.6 LASING 314
10.3 EXCITON RECOMBINATION 315
10.3.1 FREE EXCITONS 315
10.3.2 BOUND EXCITONS 317
10.3.3 ALLOY BROADENING 323
10.4 PHONON REPLICA 326
10.5 SELF-ABSORPTION 330
10.6 DONOR-ACCEPTOR PAIR TRANSITIONS 331
10.7 INNER-IMPURITY RECOMBINATION 331
10.8 AUGER RECOMBINATION 333
10.9 BAND-IMPURITY RECOMBINATION 335
10.9.1 SHOCKLEY-READ-HALL KINETICS 335
10.9.2 MULTILEVEL TRAPS 339
10.10 FIELD EFFECT 339
10.10.1 THERMALLY ACTIVATED EMISSION 339
10.10.2 DIRECT TUNNELING 340
10.10.3 ASSISTED TUNNELING 340
10.11 RECOMBINATION AT EXTENDED DEFECTS 340
10.11.1 SURFACES 340
10.11.2 GRAIN BOUNDARIES 341
10.11.3 DISLOCATIONS 341
10.12 EXCESS-CARRIER PROFILES 342
10.12.1 GENERATION AT SURFACE 343
10.12.2 GENERATION IN THE BULK 343
PART II SELECTED TOPICS
11 HETEROSTRUCTURES 347
11.1 INTRODUCTION 347
11.2 HETEROEPITAXY 347
11.2.1 GROWTH METHODS 347
11.2.2 SUBSTRATES 348
11.2.3 GROWTH MODES 351
IMAGE 7
CONTENTS XVII
11.2.4 HETEROSUBSTRATES 352
11.2.5 PSEUDOMORPHIC STRUCTURES 356
11.2.6 PLASTIC RELAXATION 356
11.2.7 SURFACTANTS 358
11.3 ENERGY LEVELS IN HETEROSTRUCTURES 359
11.3.1 BAND LINEUP IN HETEROSTRUCTURES 359
11.3.2 QUANTUM WELLS 361
11.3.3 SUPERLATTICES 366
11.3.4 SINGLE HETEROINTERFACE BETWEEN DOPED MATERIALS. . 368 11.4
RECOMBINATION IN QUANTUM WELLS 369
11.4.1 THICKNESS DEPENDENCE 369
11.4.2 BROADENING EFFECTS 370
11.4.3 QUANTUM CONFINED STARK EFFECT 374
11.5 ISOTOPE SUPERLATTICES 375
11.6 WAFER BONDING 377
12 EXTERNAL FIELDS 379
12.1 ELECTRIC FIELDS 379
12.1.1 BULK MATERIAL 379
12.1.2 QUANTUM WELLS 381
12.2 MAGNETIC FIELDS 382
12.2.1 FREE-CARRIER ABSORPTION 383
12.2.2 ENERGY LEVELS IN BULK CRYSTALS 384
12.2.3 ENERGY LEVELS IN A 2DEG 386
12.2.4 SHUBNIKOV-DE HAAS OSCILLATIONS 387
12.3 QUANTUM HALL EFFECT 389
12.3.1 INTEGRAL QHE 389
12.3.2 FRACTIONAL QHE 393
12.3.3 WEISS OSCILLATIONS 394
13 NANOSTRUCTURES 397
13.1 INTRODUCTION 397
13.2 QUANTUM WIRES 397
13.2.1 V-GROOVE QUANTUM WIRES 397
13.2.2 CLEAVED-EDGE OVERGROWTH QUANTUM WIRES 401 13.2.3 NANOWHISKERS 401
13.2.4 NANOBELTS 403
13.2.5 QUANTIZATION IN TWO-DIMENSIONAL POTENTIAL WELLS . 404 13.3
QUANTUM DOTS 407
13.3.1 QUANTIZATION IN THREE-DIMENSIONAL POTENTIAL WELLS 407
13.3.2 ELECTRICAL AND TRANSPORT PROPERTIES 410
13.3.3 SELF-ASSEMBLED PREPARATION 413
13.3.4 OPTICAL PROPERTIES 419
IMAGE 8
XVIII CONTENTS
14 POLARIZED SEMICONDUCTORS 425
14.1 INTRODUCTION 425
14.2 SPONTANEOUS POLARIZATION 425
14.3 FERROELECTRICITY 427
14.3.1 MATERIALS 428
14.3.2 SOFT PHONON MODE 428
14.3.3 PHASE TRANSITION 429
14.3.4 DOMAINS 432
14.3.5 OPTICAL PROPERTIES 433
14.4 PIEZOELECTRICITY 433
14.4.1 PIEZOELECTRIC EFFECT 433
14.4.2 ZINCBLENDE CRYSTALS 434
14.4.3 WURTZITE CRYSTALS 435
14.4.4 PIEZOELECTRIC EFFECTS IN NANOSTRUCTURES 438
15 MAGNETIC SEMICONDUCTORS 441
15.1 INTRODUCTION 441
15.2 MAGNETIC SEMICONDUCTORS 441
15.3 DILUTED MAGNETIC SEMICONDUCTORS 442
15.4 SPINTRONICS 448
15.4.1 SPIN TRANSISTOR 448
15.4.2 SPIN LED 448
16 ORGANIC SEMICONDUCTORS 451
16.1 MATERIALS 451
16.1.1 SMALL ORGANIC MOLECULES, POLYMERS 451
16.1.2 ORGANIC SEMICONDUCTOR CRYSTALS 451
16.2 ELECTRONIC STRUCTURE 454
16.3 DOPING 456
16.4 TRANSPORT PROPERTIES 457
16.5 OPTICAL PROPERTIES 457
17 GRAPHENE AND CARBON NANOTUBES 465
17.1 GRAPHENE 465
17.1.1 STRUCTURE 465
17.1.2 BAND STRUCTURE 465
17.1.3 ELECTRICAL PROPERTIES 468
17.1.4 OTHER TWO-DIMENSIONAL CRYSTALS 472
17.2 CARBON NANOTUBES 473
17.2.1 STRUCTURE 473
17.2.2 BAND STRUCTURE 474
17.2.3 OPTICAL PROPERTIES 475
17.2.4 OTHER ANORGANIC NANOTUBES 476
IMAGE 9
CONTENTS XIX
18 DIELECTRIC STRUCTURES 481
18.1 PHOTONIC BAND GAP MATERIALS 481
18.1.1 INTRODUCTION 481
18.1.2 GENERAL ID SCATTERING THEORY 481
18.1.3 TRANSMISSION OF AN A^-PERIOD POTENTIAL 483
18.1.4 THE QUARTER-WAVE STACK 485
18.1.5 FORMATION OF A 3D BAND STRUCTURE 488
18.1.6 DISORDER 491
18.1.7 DEFECT MODES 493
18.1.8 COUPLING TO AN ELECTRONIC RESONANCE 497
18.2 MICROSCOPIC RESONATORS 500
18.2.1 MICRODISCS 500
18.2.2 PURCELL EFFECT 502
18.2.3 DEFORMED RESONATORS 503
18.2.4 HEXAGONAL CAVITIES 505
19 TRANSPARENT CONDUCTIVE OXIDE SEMICONDUCTORS 511
19.1 MATERIALS 511
19.2 PROPERTIES 512
PART III APPLICATIONS
20 DIODES 519
20.1 INTRODUCTION 519
20.2 METAL-SEMICONDUCTOR CONTACTS 520
20.2.1 BAND DIAGRAM IN EQUILIBRIUM 520
20.2.2 SPACE-CHARGE REGION 525
20.2.3 SCHOTTKY EFFECT 527
20.2.4 CAPACITANCE 529
20.2.5 CURRENT-VOLTAGE CHARACTERISTIC 532
20.2.6 OHMIC CONTACTS 543
20.2.7 METAL CONTACTS TO ORGANIC SEMICONDUCTORS 546 20.3
METAL-INSULATOR-SEMICONDUCTOR DIODES 548
20.3.1 BAND DIAGRAM FOR IDEAL MIS DIODE 548
20.3.2 SPACE-CHARGE REGION 551
20.3.3 CAPACITANCE 555
20.3.4 NONIDEAL MIS DIODE 556
20.4 BIPOLAR DIODES 558
20.4.1 BAND DIAGRAM 558
20.4.2 SPACE-CHARGE REGION 558
20.4.3 CAPACITANCE 563
20.4.4 CURRENT-VOLTAGE CHARACTERISTICS 565
20.4.5 BREAKDOWN 575
20.4.6 ORGANIC SEMICONDUCTOR DIODES 580
IMAGE 10
XX CONTENTS
20.5 APPLICATIONS AND SPECIAL DIODE DEVICES 582
20.5.1 RECTIFICATION 582
20.5.2 FREQUENCY MIXING 584
20.5.3 VOLTAGE REGULATOR 586
20.5.4 ZENER DIODES 588
20.5.5 VARACTORS 588
20.5.6 FAST-RECOVERY DIODES 589
20.5.7 STEP-RECOVERY DIODES 590
20.5.8 PIN-DIODES 591
20.5.9 TUNNELING DIODES 592
20.5.10 BACKWARD DIODES 595
20.5.11 GUNN DIODES 596
20.5.12 HETEROSTRUCTURE DIODES 597
21 LIGHT-TO-EIECTRICITY CONVERSION 599
21.1 PHOTOCATALYSIS 599
21.2 PHOTOCONDUCTORS 601
21.2.1 INTRODUCTION 601
21.2.2 PHOTOCONDUCTIVITY DETECTORS 601
21.2.3 ELECTROPHOTOGRAPHY 603
21.2.4 QWIPS 604
21.2.5 BLOCKED IMPURITY-BAND DETECTORS 608
21.3 PHOTODIODES 610
21.3.1 INTRODUCTION 610
21.3.2 PN PHOTODIODES 611
21.3.3 PIN PHOTODIODES 613
21.3.4 POSITION-SENSING DETECTOR 615
21.3.5 MSM PHOTODIODES 616
21.3.6 AVALANCHE PHOTODIODES 623
21.3.7 TRAVELING-WAVE PHOTODETECTORS 625
21.3.8 CHARGE COUPLED DEVICES 627
21.3.9 PHOTODIODE ARRAYS 633
21.4 SOLAR CELLS 637
21.4.1 SOLAR RADIATION 637
21.4.2 IDEAL SOLAR CELLS 638
21.4.3 REAL SOLAR CELLS 643
21.4.4 DESIGN REFINEMENTS 643
21.4.5 MODULES 645
21.4.6 SOLAR-CELL TYPES 646
21.4.7 COMMERCIAL ISSUES 651
22 ELECTRICITY-TO-LIGHT CONVERSION 653
22.1 RADIOMETRIE AND PHOTOMETRIC QUANTITIES 653
22.1.1 RADIOMETRIE QUANTITIES 653
22.1.2 PHOTOMETRIC QUANTITIES 653
IMAGE 11
CONTENTS XXI
22.2 SCINTILLATORS 654
22.2.1 CIE CHROMATICITY DIAGRAM 655
22.2.2 DISPLAY APPLICATIONS 658
22.2.3 RADIATION DETECTION 659
22.2.4 LUMINESCENCE MECHANISMS 660
22.3 LIGHT-EMITTING DIODES 661
22.3.1 INTRODUCTION 661
22.3.2 SPECTRAL RANGES 661
22.3.3 QUANTUM EFFICIENCY 662
22.3.4 DEVICE DESIGN 663
22.3.5 WHITE LEDS 668
22.3.6 QUANTUM DOT LED 671
22.3.7 ORGANIC LED 672
22.4 LASERS 674
22.4.1 INTRODUCTION 674
22.4.2 APPLICATIONS 676
22.4.3 GAIN 678
22.4.4 OPTICAL MODE 680
22.4.5 LOSS MECHANISMS 687
22.4.6 THRESHOLD 688
22.4.7 SPONTANEOUS EMISSION FACTOR 689
22.4.8 OUTPUT POWER 690
22.4.9 TEMPERATURE DEPENDENCE 692
22.4.10 MODE SPECTRUM 694
22.4.11 LONGITUDINAL SINGLE-MODE LASERS 695
22.4.12 TUNABILITY 697
22.4.13 MODULATION 698
22.4.14 SURFACE-EMITTING LASERS 703
22.4.15 OPTICALLY PUMPED SEMICONDUCTOR LASERS 707 22.4.16 QUANTUM
CASCADE LASERS 708
22.4.17 HOT-HOLE LASERS 709
22.5 SEMICONDUCTOR OPTICAL AMPLIFIERS 710
23 TRANSISTORS 713
23.1 INTRODUCTION 713
23.2 BIPOLAR TRANSISTORS 714
23.2.1 CARRIER DENSITY AND CURRENTS 715
23.2.2 CURRENT AMPLIFICATION 718
23.2.3 EBERS-MOLL MODEL 719
23.2.4 CURRENT-VOLTAGE CHARACTERISTICS 721
23.2.5 BASIC CIRCUITS 723
23.2.6 HIGH-FREQUENCY PROPERTIES 725
23.2.7 HETEROBIPOLAR TRANSISTORS 725
23.2.8 LIGHT-EMITTING TRANSISTORS 726
23.3 FIELD-EFFECT TRANSISTORS 727
IMAGE 12
XXII CONTENTS
23.4 JFET AND MESFET 729
23.4.1 GENERAL PRINCIPLE 729
23.4.2 STATIC CHARACTERISTICS 730
23.4.3 NORMALLY ON AND NORMALLY OFF FETS 733
23.4.4 FIELD-DEPENDENT MOBILITY 734
23.4.5 HIGH-FREQUENCY PROPERTIES 736
23.5 MOSFETS 737
23.5.1 OPERATION PRINCIPLE 737
23.5.2 CURRENT-VOLTAGE CHARACTERISTICS 738
23.5.3 MOSFET TYPES 743
23.5.4 COMPLEMENTARY MOS 743
23.5.5 LARGE-SCALE INTEGRATION 746
23.5.6 TUNNELING FETS 753
23.5.7 NONVOLATILE MEMORIES 755
23.5.8 HETEROJUNCTION FETS 757
23.6 THIN-FILM TRANSISTORS 763
23.6.1 ANNEALING OF AMORPHOUS SILICON 763
23.6.2 TFT DEVICES . . '. 765
23.6.3 OFETS 765
PART IV APPENDICES
A TENSORS 769
B SPACE GROUPS 773
C KRAMERS-KRONIG RELATIONS 775
D OSCILLATOR STRENGTH 777
E QUANTUM STATISTICS 783
F THE K * P PERTURBATION THEORY 787
G EFFECTIVE-MASS THEORY 791
REFERENCES 793
INDEX 843 |
| any_adam_object | 1 |
| author | Grundmann, Marius 1964- |
| author_GND | (DE-588)112740014 |
| author_facet | Grundmann, Marius 1964- |
| author_role | aut |
| author_sort | Grundmann, Marius 1964- |
| author_variant | m g mg |
| building | Verbundindex |
| bvnumber | BV036751901 |
| classification_rvk | UP 2800 |
| classification_tum | PHY 685f |
| ctrlnum | (OCoLC)845759167 (DE-599)DNB1002680425 |
| dewey-full | 537.622 |
| dewey-hundreds | 500 - Natural sciences and mathematics |
| dewey-ones | 537 - Electricity and electronics |
| dewey-raw | 537.622 |
| dewey-search | 537.622 |
| dewey-sort | 3537.622 |
| dewey-tens | 530 - Physics |
| discipline | Maschinenbau / Maschinenwesen Physik |
| edition | 2. ed. |
| format | Book |
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| genre_facet | Lehrbuch |
| id | DE-604.BV036751901 |
| illustrated | Illustrated |
| indexdate | 2024-07-20T10:50:34Z |
| institution | BVB |
| isbn | 9783642138836 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-020669142 |
| oclc_num | 845759167 |
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| owner_facet | DE-706 DE-1050 DE-11 DE-634 DE-19 DE-BY-UBM DE-20 DE-83 DE-91G DE-BY-TUM DE-29T DE-M347 |
| physical | XXXVII, 864 S. Ill., graph. Darst. |
| publishDate | 2010 |
| publishDateSearch | 2010 |
| publishDateSort | 2010 |
| publisher | Springer |
| record_format | marc |
| series2 | Graduate texts in physics |
| spelling | Grundmann, Marius 1964- Verfasser (DE-588)112740014 aut The physics of semiconductors an introduction including nanophysics and applications Marius Grundmann 2. ed. Berlin [u.a.] Springer 2010 XXXVII, 864 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Graduate texts in physics Halbleiter (DE-588)4022993-2 gnd rswk-swf Nanotechnologie (DE-588)4327470-5 gnd rswk-swf Festkörperphysik (DE-588)4016921-2 gnd rswk-swf Halbleiterphysik (DE-588)4113829-6 gnd rswk-swf 1\p (DE-588)4123623-3 Lehrbuch gnd-content Halbleiterphysik (DE-588)4113829-6 s DE-604 Halbleiter (DE-588)4022993-2 s Festkörperphysik (DE-588)4016921-2 s Nanotechnologie (DE-588)4327470-5 s 2\p DE-604 text/html http://deposit.dnb.de/cgi-bin/dokserv?id=3480848&prov=M&dok_var=1&dok_ext=htm Inhaltstext DNB Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=020669142&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk 2\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
| spellingShingle | Grundmann, Marius 1964- The physics of semiconductors an introduction including nanophysics and applications Halbleiter (DE-588)4022993-2 gnd Nanotechnologie (DE-588)4327470-5 gnd Festkörperphysik (DE-588)4016921-2 gnd Halbleiterphysik (DE-588)4113829-6 gnd |
| subject_GND | (DE-588)4022993-2 (DE-588)4327470-5 (DE-588)4016921-2 (DE-588)4113829-6 (DE-588)4123623-3 |
| title | The physics of semiconductors an introduction including nanophysics and applications |
| title_auth | The physics of semiconductors an introduction including nanophysics and applications |
| title_exact_search | The physics of semiconductors an introduction including nanophysics and applications |
| title_full | The physics of semiconductors an introduction including nanophysics and applications Marius Grundmann |
| title_fullStr | The physics of semiconductors an introduction including nanophysics and applications Marius Grundmann |
| title_full_unstemmed | The physics of semiconductors an introduction including nanophysics and applications Marius Grundmann |
| title_short | The physics of semiconductors |
| title_sort | the physics of semiconductors an introduction including nanophysics and applications |
| title_sub | an introduction including nanophysics and applications |
| topic | Halbleiter (DE-588)4022993-2 gnd Nanotechnologie (DE-588)4327470-5 gnd Festkörperphysik (DE-588)4016921-2 gnd Halbleiterphysik (DE-588)4113829-6 gnd |
| topic_facet | Halbleiter Nanotechnologie Festkörperphysik Halbleiterphysik Lehrbuch |
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