Chalcogenide photovoltaics: physics, technologies, and thin film devices
Gespeichert in:
| Hauptverfasser: | , |
|---|---|
| Format: | Buch |
| Sprache: | English |
| Veröffentlicht: |
Weinheim
Wiley-VCH
2011
|
| Schlagworte: | |
| Online-Zugang: | Inhaltstext Inhaltsverzeichnis |
| Beschreibung: | Hier auch später erschienene, unveränderte Nachdrucke |
| Beschreibung: | XV, 368 S. Ill., graph. Darst. |
| ISBN: | 9783527314591 |
Internformat
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| 245 | 1 | 0 | |a Chalcogenide photovoltaics |b physics, technologies, and thin film devices |c Roland Scheer ; Hans W. Schock |
| 264 | 1 | |a Weinheim |b Wiley-VCH |c 2011 | |
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Datensatz im Suchindex
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IMAGE 1
CONTENTS
PREFACE XI SYMBOLS AND ACRONYMS XIII
1 1.1 1.1.1 1.2 1.2.1 1.3
2 2.1 2.2 2.3 2.3.1 2.3.2 2.3.3
2.3.4 2.3.5 2.3.6 2.3.7 2.4 2.4.1 2.4.2 2.4.3 2.4.4 2.4.5 2.4.5 2.4.5
2.4.5 2.4.5 2.4.6 2.4.6
.1 .2 .3 .4
.1
INTRODUCTION 1 HISTORY OF CU(IN,GA)(S,SE) 2 SOLAR CELLS 1 MILESTONES OF
CU(IN,GA)(S,SE) 2 DEVELOPMENT 3
HISTORY OF CDTE SOLAR CELLS 5 MILESTONES OF CDTE DEVELOPMENT 6 PROSPECTS
OF CHALCOGENIDE PHOTOVOLTAICS 7
THIN FILM HETEROSTRUCTURES 9 ENERGIES AND POTENTIALS 9 CHARGE DENSITIES
AND FLUXES 11 ENERGY BAND DIAGRAMS 13
RULES AND CONVENTIONS 13 ABSORBER/WINDOW 17 ABSORBER/BUFFER/WINDOW 20
INTERFACE STATES 24
INTERFACE DIPOLES 29 DEEP BULK STATES 29 BANDGAP GRADIENTS 32 DIODE
CURRENTS 36
SUPERPOSITION PRINCIPLE AND SHIFTING APPROXIMATION REGIONS OF
RECOMBINATION 37 RADIATIVE RECOMBINATION 40 AUGER RECOMBINATION 43
DEFECT RELATED RECOMBINATION 44 SCR RECOMBINATION 50 QNR RECOMBINATION
60 BACK SURFACE RECOMBINATION 62
INTERFACE RECOMBINATION 63 PARALLEL PROCESSES 73 SCR AND QNR
RECOMBINATION 73
36
BIBLIOGRAFISCHE INFORMATIONEN HTTP://D-NB.INFO/100615003X
DIGITALISIERT DURCH
IMAGE 2
VI CONTENTS
2.4.6.2 SCR AND IF RECOMBINATION 75
2.4.7 BARRIERS FOR DIODE CURRENT 76 2.4.8 BIAS DEPENDENCE 78 2.4.9
NON-HOMOGENEITIES 79 2.5 LIGHT GENERATED CURRENTS 80
2.5.1 GENERATION CURRENTS 81 2.5.2 GENERATION FUNCTION 84 2.5.3 PHOTO
CURRENT 86
2.5.4 COLLECTION FUNCTION 87 2.5.4.1 ABSORBER QUASI NEUTRAL REGION 87
2.5.4.2 QNR WITH GRADED BANDGAP 90 2.5.4.3 QNR WITH BACK SURFACE FIELD
91
2.5.4.4 ABSORBER SPACE CHARGE REGION 92 2.5.4.5 BUFFER LAYER 94 2.5.4.6
SIMULATING THE COLLECTION FUNCTION 95 2.5.5 QUANTUM EFFICIENCY AND
CHARGE COLLECTION EFFICIENCY 96
2.5.6 BARRIERS FOR PHOTO CURRENT 97 2.5.7 VOLTAGE DEPENDENCE OF PHOTO
CURRENT 99 2.5.7.1 WIDTH OF SCR 99 2.5.7.2 INTERFACE RECOMBINATION 200
2.5.7.3 PHOTO CURRENT BARRIERS 100 2.6 DEVICE ANALYSIS AND PARAMETERS
101
2.6.1 EQUIVALENT CIRCUITS 101 2.6.1.1 DC EQUIVALENT CIRCUIT 101 2.6.1.2
AC EQUIVALENT CIRCUIT 103 2.6.1.3 MODULE EQUIVALENT CIRCUIT 105 2.6.2
CURRENT-VOLTAGE ANALYSIS 207 2.6.2.1 EXTERNAL COLLECTION EFFICIENCY 107
2.6.2.2 DIODE PARAMETERS 108 2.6.2.3 OPEN CIRCUIT VOLTAGE 112 2.6.2.4
FILL FACTOR 116
2.6.3 CAPACITANCE-VOLTAGE ANALYSIS 119 2.6.4 ADMITTANCE SPECTROSCOPY 122
3 DESIGN RULES FOR HETEROSTRUCTURE SOLAR CELLS AND MODULES 129 3.1
ABSORBER BANDGAP 129
3.2 BAND ALIGNMENT 131
3.3 EMITTER DOPING AND DOPING RATIO 137 3.4 FERMI LEVEL PINNING 140
3.5 ABSORBER DOPING 142
3.6 ABSORBER THICKNESS 147
3.7 GRAIN BOUNDARIES 150
3.8 BACK CONTACT BARRIER 156
3.9 BUFFER THICKNESS 159
3.10 FRONT SURFACE GRADIENT 162
IMAGE 3
CONTENTS VII
3.11 BACK SURFACE GRADIENTS 265
3.12 MONOLITHIC SERIES INTERCONNECTION 272
4 THIN FILM MATERIAL PROPERTIES 175
4.1 A"-B VI ABSORBERS 275
4.1.1 PHYSICO-CHEMICAL PROPERTIES 275 4.1.2 LATTICE DYNAMICS 279 4.1.3
ELECTRONIC PROPERTIES 280 4.1.3.1 PRACTICAL DOPING LIMITS 280 4.1.3.2
DEFECT SPECTROSCOPY 282 4.1.3.3 MINORITY CARRIER LIFETIME 182 4.1.4
OPTICAL PROPERTIES 285 4.1.4.1 CDTE 285
4.1.4.2 MULTINARY PHASES 287 4.1.5 SURFACE PROPERTIES 188 4.1.6
PROPERTIES OF GRAIN BOUNDARIES 189 4.2 A I -B III -C 2 YI ABSORBERS 292
4.2.1 PHYSICO-CHEMICAL PROPERTIES 293 4.2.1.1 TERNARY PHASE DIAGRAMS 193
4.2.1.2 MULTINARY PHASES 298
4.2.1.3 DIFFUSION COEFFICIENTS 200 4.2.2 LATTICE DYNAMICS 202 4.2.3
ELECTRONIC PROPERTIES 203 4.2.3.1 SINGLE POINT DEFECTS 204
4.2.3.2 DEFECT COMPLEXES 209 4.2.3.3 DEFECT SPECTROSCOPY 210 4.2.3.4
PRACTICAL DOPING LIMITS 224 4.2.3.5 CARRIER MOBILITY 215 4.2.3.6
MINORITY CARRIER LIFETIME 226
4.2.4 OPTICAL PROPERTIES 226 4.2.4.1 TERNARY SEMICONDUCTORS 227 4.2.4.2
MULTINARY SEMICONDUCTORS 228 4.2.5 SURFACE PROPERTIES 220 4.2.5.1
SURFACE COMPOSITION 220 4.2.5.2 SURFACE ELECTRONICS 222 4.2.6 PROPERTIES
OF GRAIN BOUNDARIES 224 4.3 BUFFER LAYERS 226
4.4 WINDOW LAYERS 226
4.4.1 LOW RESISTANCE WINDOWS 226 4.4.2 HIGH RESISTANCE WINDOWS 230 4.5
INTERFACES 230
5 THIN FILM TECHNOLOGY 235
5.1 CDTE CELLS AND MODULES 235
5.1.1 SUBSTRATES 235
IMAGE 4
VIM CONTENTS
5.1.2 WINDOW LAYERS FOR CDTE CELLS 236
5.1.3 BUFFER LAYERS FOR CDTE CELLS 23 7 5.1.4 CDTE ABSORBER LAYER 240
5.1.5 ACTIVATION BY CHLORINE TREATMENT 243 5.1.6 INFLUENCE OF OXYGEN 245
5.1.7 INFLUENCE OF COPPER 246 5.1.8 BACK CONTACT 249
5.1.8.1 SURFACE MODIFICATION 249 5.1.8.2 PRIMARY AND SECONDARY CONTACTS
250 5.1.9 MODULE FABRICATION AND LIFE CYCLE ANALYSIS 251 5.2
CU(IN,GA)(S,SE) 2 CELLS AND MODULES 252
5.2.1 SUBSTRATES 253
5.2.2 BACK CONTACTS 253
5.2.3 CU(IN,GA)(S,SE) 2 ABSORBER LAYERS 255 5.2.3.1 CO-EVAPORATION 257
5.2.3.2 DEPOSITION REACTION 260 5.2.3.3 SPUTTERING 262
5.2.3.4 EPITAXY, CHEMICAL VAPOR DEPOSITION, AND VAPOR TRANSPORT
PROCESSES 262 5.2.4 INFLUENCE OF SODIUM 262
5.2.5 INFLUENCE OF GALLIUM 265 5.2.6 INFLUENCE OF SULFUR 265
5.2.7 INFLUENCE OF OXYGEN 266 5.2.8 BUFFER LAYERS OF CIGS 268 5.2.8.1
CHEMICAL BATH DEPOSITED CDS 268 5.2.8.2 ALTERNATIVE BUFFER LAYERS 270
5.2.9 WINDOW LAYERS OF CIGS 272 5.2.10 MODULE FABRICATION 273
6 PHOTOVOLTAIC PROPERTIES OF STANDARD DEVICES 277 6.1 CDTE DEVICE
PROPERTIES 277
6.1.1 SOLAR CELL PARAMETERS 277 6.1.2 DIODE CURRENTS 277
6.1.3 COLLECTION FUNCTIONS 279 6.1.4 DEVICE ANOMALIES 280 6.1.5
TRANSIENT EFFECTS AND METASTABILITY 282 6.1.6 DEVICE MODEL 282
6.1.7 STABILITY 285
6.2 A I -B III -C 2 /I DEVICE PROPERTIES 286
6.2.1 SOLAR CELL PARAMETERS 286 6.2.2 DIODE CURRENTS 288
6.2.3 COLLECTION FUNCTION 290 6.2A TRANSIENT EFFECTS AND METASTABILITY
292 6.2.4.1 RELAXED STATE 292 6.2.4.2 MODELS FOR RELAXED STATE 293
IMAGE 5
CONTENTS IX
6.2.4.3 RED LIGHT EFFECT 294
6.2.4.4 FORWARD BIAS EFFECT 295 6.2.4.5 BLUE LIGHT EFFECT 295 6.2.4.6
WHITE LIGHT EFFECT 296 6.2.4.7 REVERSE BIAS EFFECT 296
6.2.4.8 MODELS FOR METASTABILITY 297 6.2.4.9 IMPLICATIONS FOR MODULE
TESTING 298 6.2.5 DEVICE MODEL 299
6.2.6 STABILITY 302
7 APPENDIX A: FREQUENTLY OBSERVED ANOMALIES 305 7.1 JV CURVES 305
7.1.1 ROLL OVER EFFECT 305 7.1.2 CROSS OVER 306
7.1.3 KINK IN LIGHT JV CURVE 306 7.1.4 VIOLATION OF SHIFTING
APPROXIMATION 307 7.2 SOLAR CELL PARAMETERS 308
7.2.1 REDUCED J SC BUT HIGH V OC 308
7.2.2 REDUCED V OC BUT HIGH T SC 308
7.2.3 HIGH J SC BUT LOW FF 309
7.3 DIODE PARAMETERS 309
7.3.1 DIODE PARAMETER A 2 309
7.3.2 ACTIVATION ENERGY E A E G , A 309
7.3.3 DIODE QUALITY FACTOR ILLUMINATION DEPENDENT 320 7.3.4 DIODE
QUALITY FACTOR TEMPERATURE-DEPENDENT 310 7.4 QUANTUM EFFICIENCY 322
7.4.1 HIGH J SC BUT LOW EQE 322
7.4.2 LOW J SC BUT HIGH EQE 322
7.4.3 LOW BLUE RESPONSE IN IQE 322 7.4.4 LOW RED RESPONSE IN IQE 322
7.4.5 QUANTUM EFFICIENCY LOW AT ALL WAVELENGTHS 322
7.4.6 APPARENT QUANTUM EFFICIENCY 323 7.5 TRANSIENT EFFECTS 323
7.5.1 VOC TIME-DEPENDENT WITH DV 0C /DT 0 323
7.5.2 V OC TIME-DEPENDENT WITH DV 0C /DT 0 324
8 APPENDIX B: TABLES 315
REFERENCES 322
INDEX 362 |
| any_adam_object | 1 |
| author | Scheer, Roland Schock, Hans-Werner 1946- |
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| spellingShingle | Scheer, Roland Schock, Hans-Werner 1946- Chalcogenide photovoltaics physics, technologies, and thin film devices Dünnschichtsolarzelle (DE-588)4150833-6 gnd Chalkogenide (DE-588)4147541-0 gnd Verbindungshalbleiter (DE-588)4062623-4 gnd |
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| title | Chalcogenide photovoltaics physics, technologies, and thin film devices |
| title_auth | Chalcogenide photovoltaics physics, technologies, and thin film devices |
| title_exact_search | Chalcogenide photovoltaics physics, technologies, and thin film devices |
| title_full | Chalcogenide photovoltaics physics, technologies, and thin film devices Roland Scheer ; Hans W. Schock |
| title_fullStr | Chalcogenide photovoltaics physics, technologies, and thin film devices Roland Scheer ; Hans W. Schock |
| title_full_unstemmed | Chalcogenide photovoltaics physics, technologies, and thin film devices Roland Scheer ; Hans W. Schock |
| title_short | Chalcogenide photovoltaics |
| title_sort | chalcogenide photovoltaics physics technologies and thin film devices |
| title_sub | physics, technologies, and thin film devices |
| topic | Dünnschichtsolarzelle (DE-588)4150833-6 gnd Chalkogenide (DE-588)4147541-0 gnd Verbindungshalbleiter (DE-588)4062623-4 gnd |
| topic_facet | Dünnschichtsolarzelle Chalkogenide Verbindungshalbleiter |
| url | http://deposit.dnb.de/cgi-bin/dokserv?id=3527466&prov=M&dok_var=1&dok_ext=htm http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=020656285&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| work_keys_str_mv | AT scheerroland chalcogenidephotovoltaicsphysicstechnologiesandthinfilmdevices AT schockhanswerner chalcogenidephotovoltaicsphysicstechnologiesandthinfilmdevices |