Crystal growth technology: semiconductors and dielectrics
Gespeichert in:
| Weitere Verfasser: | , |
|---|---|
| Format: | Buch |
| Sprache: | English |
| Veröffentlicht: |
Weinheim, Bergstr
Wiley-VCH
2010
|
| Schlagworte: | |
| Online-Zugang: | Inhaltstext Inhaltsverzeichnis |
| Beschreibung: | XXIV, 342 S. Ill., graph. Darst. |
| ISBN: | 9783527325931 |
Internformat
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Datensatz im Suchindex
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IX CONTENTS FOREWORD V PREFACE XVII LIST OF CONTRIBUTORS XIX PART I
BASIC CONCEPTS IN CRYSTAL GROWTH TECHNOLOGY 1 1 THERMODYNAMIC MODELING
OF CRYSTAL-GROWTH PROCESSES 3 EBERHARD BUHRIG, MANFREDJURISCH, JUERGEN
KORB, AND OLFPAETZOLD 1.1 INTRODUCTION 3 1.2 GENERAL APPROACH OF
THERMODYNAMIC MODELING 4 1.2.1 BASICS 4 1.2.1.1 STATE VARIABLES FOR THE
DESCRIPTION OF EQUILIBRIUM CONDITIONS 4 1.2.1.2 THE CHEMSAGE SOFTWARE
PACKAGE 5 1.3 CRYSTAL GROWTH IN THE SYSTEM SI-C-O-AR (EXAMPLE 1) 6 1.3.1
SELECTION OF SPECIES 7 1.3.2 TEST CALCULATION, CHECK OF CONSISTENCY 7
1.3.3 CALCULATION OF GIBBS FREE ENERGY FOR SELECTED REACTIONS 8 1.3.4
MINIMIZATION OF GIBBS FREE ENERGY OF COMPLEX SYSTEMS 9 1.3.5 THE
THERMODYNAMIC-TECHNOLOGICAL MODEL OF THE EDGE-DEFINED FILM-FED GROWTH OF
SILICON 10 1.4 CRYSTAL GROWTH OF CARBON-DOPED GAAS (EXAMPLE 2) 15 1.4.1
COMPONENTS AND SPECIES IN THE SYSTEM 16 1.4.2 RESULTS 17 1.4.3 EXTENDED
MODEL 19 1.5 SUMMARY AND CONCLUSIONS 22 ACKNOWLEDGMENT BIBLIOGRAFISCHE
INFORMATIONEN HTTP://D-NB.INFO/994011156 DIGITALISIERT DURCH X CONTENTS
2.2 MODEL DESCRIPTION 28 2.2.1 QUASI-THERMODYNAMIC MODEL OF A1N AND
ALGAN HVPE 29 2.2.2 MODELING OF GAS-PHASE NUCLEATION IN SIC CVD AND
HTCVD 30 2.3 RESULTS AND DISCUSSIONS 31 2.3.1 GAN, A1N, AND ALGAN HVPE
31 2.3.2 SIC HTCVD 35 2.4 CONCLUSIONS 38 REFERENCES 39 3 ADVANCED
TECHNOLOGIES OF CRYSTAL GROWTH FROM MELT USING VIBRATIONAL INFLUENCE 41
EVGENY V. ZHARIKOV 3.1 INTRODUCTION 41 3.2 AXIAL VIBRATIONAL CONTROL IN
CRYSTAL GROWTH 42 3.3 AVC-ASSISTED CZOCHRALSKI METHOD 49 3.4
AVC-ASSISTED BRIDGMAN METHOD 54 3.5 AVC-ASSISTED FLOATING ZONE METHOD 58
3.6 CONCLUSIONS 59 ACKNOWLEDGMENTS 60 REFERENCES 60 PART II
SEMICONDUCTORS 65 4 NUMERICAL ANALYSIS OF SELECTED PROCESSES IN
DIRECTIONAL SOLIDIFICATION OF SILICON FOR PHOTOVOLTAICS 67 KOICHI
KAKIMOTO 4.1 INTRODUCTION 67 4. CONTENTS I XI 5.8 OUTLOOK ON TMF-VCZ 91
5.9 CONCLUSIONS 94 ACKNOWLEDGMENTS 95 REFERENCES 95 6 THE GROWTH OF
SEMICONDUCTOR CRYSTALS (GE, GAAS) BY THE COMBINED HEATER MAGNET
TECHNOLOGY 101 PETER RUDOLPH, MATTHIAS CZUPALLA, CHRISTIANE
FRANK-ROTSCH, FRANK-MICHAEL KIESSLING AND BERND LUX 6.1 INTRODUCTION 101
6.2 SELECTED FUNDAMENTALS 102 6.2.1 CONVECTION-DRIVEN FORCES 102 6.2.2
THE FEATURES OF TRAVELING MAGNETIC FIELDS 104 6.3 TMF GENERATION IN
HEATER-MAGNET MODULES 106 6.4 THE HMM DESIGN 107 6.5 NUMERICAL MODELING
109 6.6 DUMMY MEASUREMENTS 111 6.7 GROWTH RESULTS UNDER TMF 112 6.7.1
LECOFGAAS 112 6.7.2 VGFOFGE 114 6.8 CONCLUSIONS AND OUTLOOK 118
ACKNOWLEDGMENT 118 REFERENCES 119 7 MANUFACTURING OF BULK AIN SUBSTRATES
121 OLEG V. AVDEEV, TATIANA YU. CHEMEKOVA, HEIKKI HELAVA, YURI N.
MAKAROV, EVGENII XII CONTENTS 8.2 CLASSIFICATION, NOMENCLATURE AND
CHARACTERIZATION OF DISLOCATIONS IN SIC AND GAN 138 8.3 CONVERSION OF
BASAL PLANE DISLOCATIONS DURING SIC EPITAXY 141 8.3.1 EXPERIMENTAL
STRATEGIES FOR OBTAINING HIGH CONVERSION RATES 141 8.3.2 DRIVING FORCE
FOR BPD CONVERSION 143 8.4 REDUCTION OF DISLOCATIONS DURING HOMOEPITAXY
OF GAN 144 8.4.1 OBJECTIVES AND TECHNIQUES 144 8.4.2 DRIVING FORCE FOR
DISLOCATION REDUCTION 145 8.5 CONCLUSIONS 148 ACKNOWLEDGMENT 148
REFERENCES 148 9 LOW-TEMPERATURE GROWTH OF TERNARY ILL-V SEMICONDUCTOR
CRYSTALS FROM ANTIMONIDE-BASED QUATERNARY MELTS 151 PARTHA.S. DUTTA 9.1
INTRODUCTION 151 9.2 CRYSTAL GROWTH FROM QUATERNARY MELTS 152 9.3
ADVANTAGES OF QUATERNARY MELTS 152 9.4 SYNTHESIS AND BULK CRYSTAL GROWTH
154 9.4.1 GROWTH FROM GA^IN^AS^SB,, MELT 158 9.4.1.1 GROWTH OF GA,_ % IN
% AS 158 9.4.1.2 GROWTH OF GAASI^SB,, 161 9.4. CONTENTS I XIII 10
MERCURY CADMIUM TELLURIDE (MCT) GROWTH TECHNOLOGY USING ACRT AND LPE 275
PETER CAPPER 10.1 INTRODUCTION 275 10.2 BRIDGMAN/ACRT GROWTH OF MCT 177
10.2.1 INTRODUCTION 177 10.2.2 PROCESSING 178 10.2.3 ACCELERATED
CRUCIBLE ROTATION TECHNIQUE (ACRT) 178 10.2.3.1 INTRODUCTION 278
10.2.3.2 HIGH-X MATERIAL 179 10.2.4 SUMMARY 182 10.3 LIQUID PHASE
EPITAXY OF MCT 284 10.3.1 INTRODUCTION 184 10.3.2 GROWTH 285 10.3.3
SUMMARY 292 REFERENCES 292 11 THE USE OF A PLATINUM TUBE AS AN AMPOULE
SUPPORT IN THE BRIDGMAN GROWTH OF BULK CZT CRYSTALS 1 95 NARAYANASAMY
VIJAYAN, VERONICA CARCELEN, AND ERNESTO DIEGUEZ 11.1 INTRODUCTION 195
11.2 THE IMPORTANCE OF THE SOLID/LIQUID INTERFACE 197 11.3 APPROACHES
FOR CRYSTAL GROWTH USING AMPOULE SUPPORT 199 11.4 RESULTS AND
DISCUSSIONS 201 11.5 CONCLUSIONS 208 ACKNOWLEDGMENTS 209 REFERENCES 209
PAR XIV CONTENTS 13 ADVANCED MATERIAL DEVELOPMENT FOR INER*IAL FUSION
ENERGY (IFE) 229 KATHLEEN SCHAFFERS, ANDREW J. BAYRAMIAN, JOSEPH A.
MENAPACE, GREGORY T. ROGOWSKI, THOMAS F. SOULES, CHRISTOPHER A. STOLZ,
STEVE B. SUTTON, JOHN B. TASSANO, PETER A. THELIN, CHRISTOPHER A.
EBBERS, JOHN A. CAIRD, CHRISTOPHER P.J. BARTY, MARK A. RANDIES, CHARLES
PORTER, YITING FEI, AND BRUCE H.T. CHAI 13.1 INTRODUCTION 229 13.2
PRODUCTION OF NDRPHOSPHATE LASER GLASS AND KDP FREQUENCY- CONVERSION
CRYSTALS 233 13.2.1 ND:PHOSPHATE LASER GLASS 233 13.2.2 KDP
FREQUENCY-CONVERSION CRYSTALS 235 13.3 YB:S-FAP CRYSTALS 235 13.3.1
CRYSTAL GROWTH 237 13.3.2 MODELING 238 13.3.3 SLAB FABRICATION 239 13.4
YCOB CRYSTALS 241 13.4.1 YCOB CRYSTAL GROWTH AND FABRICATION 242 13.5
ADVANCED MATERIAL CONCEPTS FOR POWER-PLANT DESIGNS 243 13.6 SUMMARY 246
REFERENCES 246 14 MAGNETO-OPTIC GARNET SENSOR FILMS: PREPARATION,
CHARACTERIZATION, APPLICATION 249 PETER CONTENTS XV 15.3.2.1 CRUCIBLE
270 15.3.2.2 ATMOSPHERE 271 15.3.2.3 SETUP 272 15.3.2.4 GROWTH PROCEDURE
273 15.3.2.5 RESULTS 274 15.4 SPECTROSCOPIE CHARACTERIZATION 276 15.5
LASER EXPERIMENTS 279 15.6 SUMMARY AND OUTLOOK 280 ACKNOWLEDGMENT 280
REFERENCES 281 16 CONTINUOUS GROWTH OF ALKALI-HALIDES: PHYSICS AND
TECHNOLOGY 283 OLEG SIDLETSKIY 16.1 MODERN REQUIREMENTS TO LARGE
ALKALI-HALIDE CRYSTALS 283 16.2 CONDITIONS OF STEADY-STATE
CRYSTALLIZATION IN CONVENTIONAL MELT- GROWTH METHODS AND IN THEIR
MODIFICATIONS 284 16.2.1 CONVENTIONAL METHODS 284 16.2.2 MELT-FEEDING
METHODS 285 16.2.3 GROWTH-PROCESS CONTROL 286 16.3 MACRODEFECT FORMATION
IN AHC 287 16.4 DYNAMICS OF THERMAL CONDITIONS DURING CONTINUOUS GROWTH
290 16.5 ADVANCED GROWTH-CONTROL ALGORITHMS 292 16.6 SUMMARY 295
ACKNOWLEDGEMENTS 296 REFERENCES 296 XVI CONTENTS 18.2.3.1 BACKGROUND 317
18.2.3.2 APPARATUS AND EXPERIMENTAL METHOD 327 18.2.3.3 RESULTS AND
DISCUSSION 318 18.2.3.4 SUMMARY OF BEVELING OF SIC WAFER 320 18.2.4
THINNING OF SIC WAFER 320 18.2.4.1 BACKGROUND 320 18.2.4.2 SAMPLE
PREPARATION AND EXPERIMENTAL CONDITIONS 320 18.2.4.3 RESULTS AND
DISCUSSION 320 18.2.4.4 SUMMARY OF THINNING OF SIC WAFER 322 18.3
NUMERICALLY CONTROLLED SACRIFICIAL OXIDATION 322 18.3.1 BASIC CONCEPTS
322 18.3.2 BASIC EXPERIMENTS 323 18.3.2.1 EXPERIMENTAL APPARATUS 323
18.3.2.2 OXIDATION MARK 323 18.3.2.3 OXIDATION RATE 324 18.3.2.4 SURFACE
ROUGHNESS 324 18.3.2.5 SUMMARY OF THE BASIC EXPERIMENTS 326 18.3.3
IMPROVING THICKNESS UNIFORMITY OF SOI 326 18.3.3.1 BACKGROUND 326
18.3.3.2 PROCEDURE FOR UNIFORMIZING 327 18.3.3.3 UNIFORMIZING OF 300MM
SOI 327 18.3.3.4 SUMMARY OF IMPROVING THICKNESS UNIFORMITY OF SOI 328 |
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| spelling | Crystal growth technology semiconductors and dielectrics Ed. by Peter Capper and Peter Rudolph Weinheim, Bergstr Wiley-VCH 2010 XXIV, 342 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Dielektrikum (DE-588)4149716-8 gnd rswk-swf Halbleiterwerkstoff (DE-588)4158817-4 gnd rswk-swf Kristallzüchtung (DE-588)4140616-3 gnd rswk-swf Kristallzüchtung (DE-588)4140616-3 s Halbleiterwerkstoff (DE-588)4158817-4 s Dielektrikum (DE-588)4149716-8 s DE-604 Capper, Peter edt Rudolph, Peter 1933- (DE-588)139007768 edt text/html http://deposit.dnb.de/cgi-bin/dokserv?id=3294527&prov=M&dok_var=1&dok_ext=htm Inhaltstext DNB Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=020494452&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Crystal growth technology semiconductors and dielectrics Dielektrikum (DE-588)4149716-8 gnd Halbleiterwerkstoff (DE-588)4158817-4 gnd Kristallzüchtung (DE-588)4140616-3 gnd |
| subject_GND | (DE-588)4149716-8 (DE-588)4158817-4 (DE-588)4140616-3 |
| title | Crystal growth technology semiconductors and dielectrics |
| title_auth | Crystal growth technology semiconductors and dielectrics |
| title_exact_search | Crystal growth technology semiconductors and dielectrics |
| title_full | Crystal growth technology semiconductors and dielectrics Ed. by Peter Capper and Peter Rudolph |
| title_fullStr | Crystal growth technology semiconductors and dielectrics Ed. by Peter Capper and Peter Rudolph |
| title_full_unstemmed | Crystal growth technology semiconductors and dielectrics Ed. by Peter Capper and Peter Rudolph |
| title_short | Crystal growth technology |
| title_sort | crystal growth technology semiconductors and dielectrics |
| title_sub | semiconductors and dielectrics |
| topic | Dielektrikum (DE-588)4149716-8 gnd Halbleiterwerkstoff (DE-588)4158817-4 gnd Kristallzüchtung (DE-588)4140616-3 gnd |
| topic_facet | Dielektrikum Halbleiterwerkstoff Kristallzüchtung |
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