Indium nitride and related alloys:
Gespeichert in:
| Format: | Buch |
|---|---|
| Sprache: | English |
| Veröffentlicht: |
Boca Raton
CRC Press/Taylor & Francis
2010
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| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | Includes bibliographical references and index |
| Beschreibung: | xviii, 628 S. Ill. |
| ISBN: | 9781420078091 1420078097 9781420078107 1420078100 |
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| 245 | 1 | 0 | |a Indium nitride and related alloys |c edited by T.D. Veal, C.F. McConville, W.J. Schaff |
| 264 | 1 | |a Boca Raton |b CRC Press/Taylor & Francis |c 2010 | |
| 300 | |a xviii, 628 S. |b Ill. | ||
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| 500 | |a Includes bibliographical references and index | ||
| 650 | 4 | |a Indium | |
| 650 | 4 | |a Indium alloys | |
| 650 | 4 | |a Nitrides | |
| 650 | 4 | |a Semiconductors |x Materials | |
| 700 | 1 | |a Veal, Tim D. |e Sonstige |4 oth | |
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Datensatz im Suchindex
| _version_ | 1804141139008159744 |
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| adam_text | INDIUM NITRIDE AND RELATED ALLOYS EDITED BY *. D. VEAL *. F. MCCONVILLE
W. J. SCHAFF LFLP) CRC PRESS W * J TAYLOR &. FRANCIS GROUP BOCA RATON
LONDON NEW YORK CRC PRESS IS AN IMPRINT OF THE TAYLOR & FRANCIS GROUP,
AN INFORMA BUSINESS CONTENTS PREFACE XIII LIST OF CONTRIBUTORS XV 1
MOLECULAR-BEAM EPITAXY OF INN 1 Y. NANISHI, T. ARAKI, AND T. YAMAGUCHI
1.1 INTRODUCTION 1 1.2 MBE GROWTH OF INN ONE-PLANE (0001) SAPPHIRE 2
1.2.1 NITRIDATION OF C-PLANE (0001) SAPPHIRE SUBSTRATE 2 1.2.2
LOW-TEMPERATURE INN BUFFER LAYER 3 1.2.3 V/III RATIO AND GROWTH
TEMPERATURE 4 1.2.4 OPTIMIZATION OF LOW-TEMPERATURE NITRIDATION PROCESS
5 1.2.5 REGROWTH ON MICRO-FACETED INN TEMPLATE 7 1.2.6 GROWTH OF
INN-BASED NANOSTRUCTURES 10 1.3 EFFECT OF SUBSTRATE POLARITY 16 1.3.1
GROWTH OF INN ON (0001) GA-FACE AND (OOOL) N-FACE FREE-STANDING GAN
SUBSTRATES 16 1.3.2 GROWTH OF INN ON (0001) SI-FACE AND (OOOL) C-FACE
6H-SIC SUBSTRATES . . 18 1.4 GROWTH OF NON-POLAR INN 20 1.4.1 GROWTH OF
A-PLANE INN ON NITRIDED R-PLANE SAPPHIRE 21 1.4.2 GROWTH OFM-PLANE INN
ON LIALO 2 (001) 25 1.5 GROWTH OF MG-DOPED INN 28 1.6 GROWTH OF IN-RICH
INGAN 31 1.6.1 GROWTH OF IN-RICH INGAN ON INN TEMPLATES 31 1.6.2 GROWTH
AND CHARACTERIZATION OF INNAENO.SGAO^N QUANTUM WELL STRUCTURES 32 1.7
GROWTH OF INN ON SI 37 1.7.1 SUBSTRATE NITRIDATION 37 1.7.2 A1N BUFFER
38 1.7.3 MEEA1N BUFFER 40 1.8 CONCLUSION 42 REFERENCES 44 2 THERMAL
STABILITY, SURFACE KINETICS, AND MBE GROWTH DIAGRAMS FOR N- AND IN-FACE
INN 51 C. S. GALLINAT, G. KOBLMIILLER, AND J. S. SPECK 2.1 INTRODUCTION
51 2.2 THERMAL DECOMPOSITION OF INN 52 2.2.1 INN FILM POLARITY 52 2.2.2
EX SITU ANALYSIS 54 2.2.3 IN SITU ANALYSIS 55 2.3 DEVELOPMENT OF PAMBE
GROWTH DIAGRAMS 57 V VI INDIUM NITRIDE AND RELATED ALLOYS 2.3.1 METALLIC
IN ACCUMULATION AND DESORPTION 57 2.3.2 PAMBE GROWTH DIAGRAMS OF INN 59
2.3.3 IN ADLAYERS AND SURFACE RECONSTRUCTIONS 61 2.3.4 EFFECT OF IN
ADLAYER ON INN SURFACE MORPHOLOGIES 64 2.4 STRUCTURAL PROPERTIES OF INN
67 2.4.1 EVALUATION OF DISLOCATIONS 67 2.4.2 EFFECT OF GROWTH CONDITIONS
ON DISLOCATIONS 71 2.4.3 COMPARISON TO N-FACE INN 72 2.5 TRANSPORT
PROPERTIES OF INN 74 2.6 CONCLUDING REMARKS 76 REFERENCES 76 3
POLARITY-DEPENDENT EPITAXY CONTROL OF INN, INGAN AND INALN 83 X. Q. WANG
AND A. YOSHIKAWA 3.1 INTRODUCTION 83 3.2 METHODS TO DETERMINE AND
CONTROL THE POLARITY OF INN 84 3.3 EPITAXY CONTROL AND PROPERTIES OF INN
87 3.3.1 IN SITU INVESTIGATION OF GROWTH DIAGRAM BY SPECTROSCOPIC
ELLIPSOMETRY . . 87 3.3.2 N-POLARITY INN EPITAXY 89 3.3.3 IN-POLARITY
INN EPITAXY 92 3.4 P-TYPE DOPING OF IN- AND N-POLARITY INN 95 3.4.1
PROPERTIES OF MG-DOPING IN INN 95 3.4.2 INVESTIGATION OF/?-TYPE
CONDUCTION IN INN 98 3.4.3 HOLE MOBILITY IN/7-TYPE INN 102 3.5 INGAN
EPITAXY 105 3.5.1 PROPERTIES OF INGAN WITH DIFFERENT POLARITIES 105
3.5.2 EFFECT OF STOICHIOMETRY CONTROL ON IN-POLAR INGAN EPITAXY 106
3.5.3 BAND GAP ENERGY OF IN-POLARITY INGAN ALLOYS 110 3.6 INALN EPITAXY
ILL 3.6.1 EFFECT OF GROWTH TEMPERATURE ON N-POLAR INALN EPITAXY ILL
3.6.2 STRUCTURAL PROPERTIES OF N-POLAR INALN ALLOYS 113 3.6.3 BAND GAP
ENERGY OF N-POLAR INALN ALLOYS 113 3.7 CONCLUSIONS 116 REFERENCES 116 4
INN IN BRIEF: CONDUCTIVITY AND CHEMICAL TRENDS 121 P. D. C. KING, T. D.
VEAL, AND C. F. MCCONVILLE 4.1 INTRODUCTION 121 4.2 W-TYPE CONDUCTIVITY
IN INN 122 4.2.1 THREE-REGION MODEL 122 4.2.2 OVERRIDING ORIGIN OF THE
N-TYPE CONDUCTIVITY 126 4.3 INN WITHIN CHEMICAL TRENDS 128 4.4
CONCLUSIONS 131 REFERENCES 131 CONTENTS VLL 5 TRANSPORT PROPERTIES OF
INN 139 V. CIMALLA, V. LEBEDEV, O. AMBACHER, V. M. POLYAKOV, F.
SCHWIERZ, M. NIEBELSCHIITZ, G. ECKE, T. H. MYERS, AND W. J. SCHAFF 5.1
INTRODUCTION 139 5.2 ELECTRON TRANSPORT IN BULK WURTZITE INN 140 5.2.1
STEADY-STATE AND TRANSIENT TRANSPORT CHARACTERISTICS 141 5.2.2 LOW-FIELD
ELECTRON MOBILITY 145 5.3 EXPERIMENTALLY OBSERVED ELECTRON
CONCENTRATIONS AND MOBILITIES 146 5.3.1 SINGLE-FIELD HALL MEASUREMENTS
147 5.3.2 VARIABLE-FIELD HALL MEASUREMENTS 150 5.3.3 C-V DEPTH PROFILING
154 5.3.4 SPUTTER DEPTH PROFILING 155 5.3.5 SUMMARY OF THE EXPERIMENTAL
OBSERVATIONS 159 5.4 CONTRIBUTIONS TO THE -TYPE CONDUCTIVITY OF INN 159
5.4.1 BULK CONCENTRATION OF ELECTRONS 160 5.4.2 SURFACE ELECTRON
ACCUMULATION 160 5.4.3 INFLUENCE OF DISLOCATIONS 162 5.5 IMPLICATIONS
FOR INN TECHNOLOGY 164 5.6 SUMMARY 168 REFERENCES 169 6 ELECTRONIC
STATES IN INN AND LATTICE DYNAMICS OF INN AND INGAN 181 V. YU. DAVYDOV
AND A. A. KLOCHIKHIN 6.1 INTRODUCTION 181 6.2 INTERBAND OPTICAL SPECTRA
OF HEAVILY DOPED INN 183 6.2.1 ABSORPTION SPECTRA 183 6.2.2 INTERBAND
LUMINESCENCE SPECTRA 183 6.2.3 EFFECT OF EXCHANGE INTERACTION ON THE
BAND GAP 185 6.3 PHOTOLUMINESCENCE AND ABSORPTION SPECTRA OF INN SAMPLES
WITH LOW ELECTRON CON- CENTRATIONS 187 6.4 MODEL DESCRIPTION OF
ABSORPTION AND LUMINESCENCE 190 6.4.1 DENSITY OF VALENCE BAND STATES AND
PHOTOHOLE DISTRIBUTION 190 6.4.2 CONDUCTION BAND STATES 193 6.4.3
INTERBAND ABSORPTION AND PHOTOLUMINESCENCE SPECTRA 194 6.5 RESULTS OF
CALCULATIONS AND DISCUSSION 197 6.5.1 STRUCTURE OF THE PHOTOLUMINESCENCE
SPECTRA 198 6.5.2 TEMPERATURE DEPENDENCE OF PHOTOLUMINESCENCE AND
ABSORPTION SPECTRA . 198 6.5.3 DEPENDENCE OF PHOTOLUMINESCENCE SPECTRA
ON EXCITATION POWER AND EXCI- TATION ENERGY 200 6.6 BAND BENDING OF
N-INN EPILAYERS AND EXACT SOLUTION OF THE CLASSICAL THOMAS-FERMI
EQUATION 202 6.7 BAND BENDING EFFECT ON OPTICAL SPECTRA OF NANO-SIZE
-INN SAMPLES 205 6.8 VIBRATIONAL SPECTROSCOPY OF HEXAGONAL INN AND
INGAN ALLOYS 207 6.8.1 INTRODUCTION 207 6.8.2 PHONONS IN HEXAGONAL INN.
FIRST-ORDER RAMAN SCATTERING 208 6.8.3 PHONON-PLASMON MODES 210 6.8.4
PHONON DISPERSION IN HEXAGONAL INN 213 6.8.5 RAMAN STUDIES OF MG-DOPED
INN 215 6.8.6 BEHAVIOR OF PHONON MODES IN HEXAGONAL INGAN ALLOYS 220
VLLL INDIUM NITRIDE AND RELATED ALLOYS 6.8.7 COMPOSITIONAL DEPENDENCE OF
RAMAN LINE BROADENING IN INGAN 225 6.8.8 RESONANT RAMAN SCATTERING IN
INGAN ALLOYS 227 6.9 CONCLUDING REMARKS 229 REFERENCES 232 7 OPTICAL
PROPERTIES OF INN AND RELATED ALLOYS 243 J. W. L. YIM AND J. WU 7.1
INTRODUCTION 243 7.2 NARROW BAND GAP OF INN EVIDENCED FROM OPTICAL
MEASUREMENTS 245 7.3 CONDUCTION BAND STRUCTURE OF INN AND ITS EFFECTS ON
OPTICAL PROPERTIES 252 7.4 OPTICAL PROPERTIES OF INGAN AND INAIN ALLOYS
257 7.5 OPTICAL PROPERTIES OF RELATED NANOSTRUCTURES 261 7.6 CONCLUSION
AND OUTLOOK 265 REFERENCES 266 8 THEORY OF INN BULK BAND STRUCTURE 273
J. FURTHMUELLER, F. FUCHS, AND F. BECHSTEDT 8.1 INTRODUCTION 273 8.1.1 A
SHORT HISTORY 273 8.1.2 DEVIATION OF INN FROM THE COMMON CATION RULE 274
8.1.3 GAP REDUCTION DUE TO P-D REPULSION EFFECTS 275 8.2 METHODS OF
PARAMETER-FREE BAND STRUCTURE CALCULATIONS 275 8.2.1 DENSITY FUNCTIONAL
THEORY 275 8.2.2 QUASIPARTICLE BAND STRUCTURE THEORY WITHIN THE GW
APPROACH 277 8.2.3 IMPROVED STARTING POINT FOR GW 278 8.2.4
BETHE-SALPETER EQUATION AND EXCITONIC SPECTRA 284 8.3 QUASIPARTICLE
BANDS AND DENSITY OF STATES 285 8.3.1 BAND STRUCTURES 285 8.3.2
EFFECTIVE MASSES 290 8.3.3 DENSITY OF STATES 291 8.4 OPTICAL PROPERTIES
AND EXCITONS 295 8.4.1 OVERALL SPECTRA: EXCITONIC EFFECTS AND CRITICAL
POINTS 295 8.4.2 PLATEAU-LIKE REGION 301 8.4.3 ABSORPTION EDGE: ENERGY
SPLITTINGS 302 8.4.4 ABSORPTION EDGE: EXCITONIC EFFECTS 304 8.5 OUTLOOK
305 REFERENCES 307 9 ELLIPSOMETRY OF INN AND RELATED ALLOYS 315 R.
GOLDHAHN, P. SCHLEY, AND M. ROPPISCHER 9.1 INTRODUCTION 315 9.1.1 A
BRIEF REVIEW ON RECENT ELLIPSOMETRY RESULTS 315 9.1.2 OPEN QUESTIONS 317
9.1.3 OUTLINE 318 9.2 THEORETICAL BACKGROUND 319 9.2.1 FUNDAMENTAL
RELATIONS 319 9.2.2 INFLUENCE OF STRAIN ON THE OPTICAL PROPERTIES 321
9.2.3 VALENCE BAND ORDERING AND OPTICAL SELECTION RULES FOR WURTZITE
ALLOYS . . . 326 IX 9.2.4 CARRIER-INDUCED BAND GAP RENORMALIZATION AND
BURSTEIN-MOSS SHIFT .... 328 9.2.5 ANALYSIS OF ELLIPSOMETRIC DATA 331
9.3 EXPERIMENTAL RESULTS FOR WURTZITE INN 333 9.3.1 SAMPLES 333 9.3.2
INFRARED SPECTROSCOPIC ELLIPSOMETRY 334 9.3.3 INTERBAND DIELECTRIC
FUNCTION OF WURTZITE INN 336 9.3.4 EXPERIMENTAL DATA AROUND THE BAND GAP
339 9.3.5 ANALYSIS OF THE DF AROUND THE BAND GAP 340 9.3.6 ZERO-DENSITY
STRAIN-FREE GAP OF WURTZITE INN 343 9.3.7 HIGH-ENERGY CRITICAL POINTS OF
THE BAND STRUCTURE 345 9.4 PROPERTIES OF IN-RICH WURTZITE ALLOYS 348
9.4.1 INTERBAND DIELECTRIC FUNCTION OF INAIN ALLOYS 349 9.4.2 ANALYSIS
OF THE INAIN DF AROUND THE BAND GAP 350 9.4.3 HIGH-ENERGY CRITICAL
POINTS OF INAIN ALLOYS 352 9.4.4 PROPERTIES OF INGAN ALLOYS 353 9.5
EXPERIMENTAL RESULTS FOR ZINC-BLENDE INN 354 9.5.1 SAMPLES 354 9.5.2
INFRARED SPECTROSCOPIC ELLIPSOMETRY 355 9.5.3 INTERBAND DIELECTRIC
FUNCTION OF ZINC-BLENDE INN 356 9.5.4 ANALYSIS OF THE DF AROUND THE BAND
GAP 357 9.5.5 HIGH-ENERGY CRITICAL POINTS OF THE BAND STRUCTURE 359
9.5.6 BOWING PARAMETER OF ZINC-BLENDE INGAN 361 9.6 SUMMARY AND OUTLOOK
363 REFERENCES 365 10 ELECTRONIC PROPERTIES OF INN AND INGAN: DEFECTS
AND DOPING 377 W. WALUKIEWICZ, K. M. YU, J. W. AGER III, R. E. JONES,
AND N. MILLER 10.1 INTRODUCTION 377 10.2 N-TYPE DOPING AND ELECTRON
TRANSPORT 378 10.2.1 AMPHOTERIC DEFECT MODEL 378 10.2.2 UNINTENTIONAL
AND INTENTIONAL *-TYPE DOPING 380 10.2.3 ELECTRON MOBILITY 382 10.3
SURFACE ELECTRON ACCUMULATION 385 10.4 *-TYPE DOPING BY HIGH ENERGY
PARTICLE IRRADIATION 387 10.4.1 POINT DEFECT GENERATION 388 10.4.2
EFFECT ON ELECTRON CONCENTRATION 390 10.4.3 TRIPLY-CHARGED NATIVE
DEFECTS 392 10.4.4 EFFECT ON OPTICAL PROPERTIES 393 10.5 /J-TYPE DOPING
398 10.5.1 CHALLENGES OF STANDARD CHARACTERIZATION 398 10.5.2 EVIDENCE
OF/7-TYPEINN:MG 399 10.5.3 /?-TYPE INGAN ALLOYS 405 10.6 CONCLUSIONS AND
OUTLOOK 406 REFERENCES 408 X INDIUM NITRIDE AND RELATED ALLOYS 11 THEORY
OF NATIVE POINT DEFECTS AND IMPURITIES IN INN 419 A. JANOTTI AND C. G.
VAN DE WALLE 11.1 INTRODUCTION 419 11.2 THEORETICAL APPROACH 420 11.2.1
FORMATION ENERGIES 421 11.2.2 DEFECT TRANSITION LEVELS 423 11.2.3 DEFECT
AND IMPURITY CONCENTRATIONS 424 11.2.4 LDA DEFICIENCY AND POSSIBLE WAYS
TO OVERCOME IT 424 11.3 RESULTS AND DISCUSSION 427 11.3.1 BASIC
STRUCTURAL AND ELECTRONIC PROPERTIES OF INN 427 11.3.2 NATIVE POINT
DEFECTS IN INN 427 11.3.3 IMPURITIES IN INN 433 11.4 SUMMARY 438
REFERENCES 438 12 SURFACE ELECTRONIC PROPERTIES OF INN AND RELATED
ALLOYS 445 T. D. VEAL, P. D. * KING, AND * F. MCCONVILLE 12.1
INTRODUCTION 445 12.2 ELECTRON ACCUMULATION AT INN SURFACES 446 12.2.1
INITIAL EVIDENCE 446 12.2.2 INTRINSIC ELECTRON ACCUMULATION AT CLEAN
SURFACES 447 12.2.3 SURFACE SPACE-CHARGE CALCULATIONS: SOLUTION OF THE
POISSON EQUATION . . . 452 12.2.4 UNIVERSAL ELECTRON ACCUMULATION 456
12.2.5 QUANTIZED ELECTRON SUBBANDS IN THE ACCUMULATION LAYER 460 12.2.6
ORIGIN OF ELECTRON ACCUMULATION - THE LOW *-POINT CBM 467 12.3 INVERSION
LAYERS AT THE SURFACES OF/7-TYPE INN 472 12.4 STRUCTURAL PROPERTIES OF
INN SURFACES 475 12.4.1 MICROSCOPIC ORIGINS OF SURFACE ELECTRON
ACCUMULATION? 475 12.4.2 IN ADLAYERS AT INN SURFACES 476 12.4.3
STRUCTURE OF IN-POLARITY INN(OOOL) SURFACE UNDER IN-RICH CONDITIONS . .
. . 478 12.5 SURFACE ELECTRONIC PROPERTIES OF INGAN AND INAIN ALLOYS 480
12.5.1 UNDOPED AND MG-DOPED INGAN ALLOYS 481 12.5.2 UNDOPED AND MG-DOPED
INAIN ALLOYS 484 12.6 CONCLUSIONS 486 REFERENCES 488 13 THEORY OF INN
SURFACES 497 C. G. VAN DE WALLE 13.1 INTRODUCTION 497 13.2 COMPUTATIONAL
METHODOLOGY 498 13.2.1 DENSITY FUNCTIONAL THEORY 498 13.2.2 SURFACE
ENERGIES 499 13.2.3 THE BAND-GAP PROBLEM 500 13.2.4 ELECTRONIC STRUCTURE
502 13.3 RESULTS FOR SURFACE RECONSTRUCTIONS 503 13.3.1 POLAR SURFACES
503 13.3.2 NON-POLAR SURFACES 503 13.4 RESULTS FOR ELECTRONIC STRUCTURE
505 CONTENTS XI 13.4.1 POLAR SURFACES 505 13.4.2 NON-POLAR SURFACES 507
13.5 SUMMARY AND OUTLOOK 509 REFERENCES 510 14 STRUCTURE OF INN AND
INGAN: TRANSMISSION ELECTRON MICROSCOPY STUDIES 515 Z. LILIENTAL-WEBER
14.1 INTRODUCTION 515 14.2 STRUCTURAL DEFECTS IN AS-GROWN INN 516 14.3
GROWTH POLARITY OF THE INN EPI-LAYERS 521 14.4 MG-DOPED LAYERS 522 14.5
IRRADIATED INN 526 14.6 ANNEALED SAMPLES 528 14.7 STRUCTURE OF NON-POLAR
INN 529 14.8 COMPOSITIONAL MODULATION OF MBE-GROWN INGAN ALLOYS WITH
HIGH IN CONTENT . . 531 14.9 SUMMARY 535 REFERENCES 536 15 INN-BASED
DILUTE MAGNETIC SEMICONDUCTORS 541 S. M. DURBIN 15.1 INTRODUCTION 541
15.2 FERROMAGNETISM IN NITRIDE SEMICONDUCTORS 543 15.3 OVERVIEW OF
TRANSITION METAL DOPING EXPERIMENTS IN GAN AND A1N 544 15.4 MANGANESE
DOPING OF INDIUM NITRIDE 545 15.5 CHROMIUM DOPING OF INDIUM NITRIDE 549
15.6 THE ISSUE OF CLUSTERING 553 15.7 CONCLUSIONS 553 REFERENCES 554 16
INN-BASED LOW DIMENSIONAL STRUCTURES 561 S. B. CHE AND A. YOSHIKAWA 16.1
INTRODUCTION 561 16.2 INN-BASED QUANTUM WELL STRUCTURES 563 16.2.1
INN/GAN SINGLE QUANTUM WELL 563 16.2.2 INN-BASED MULTIQUANTUM WELLS WITH
IN-RICH INGAN BARRIERS 568 16.2.3 IN POLARITY GROWTH OF INN/INGAN MQWS
FOR IMPROVED CRYSTAL QUALITY . . 570 16.2.4 CRITICAL THICKNESS OF INN
WELL IN INNNN 0 .7GAO. 3 N MQW 572 16.2.5 QUANTUM CONFINED STARK EFFECT
IN INN/IN 0 .7GAO. 3 N MQW 576 16.3 NOVEL NANOSTRACTURE ONE MONOLAYER
INN QUANTUM WELLS IN GAN MATRIX 579 16.4 INN-BASED QUANTUM DOTS 586 16.5
INN-BASED NANOCOLUMNS 588 16.6 CONCLUSIONS 592 REFERENCES 593 XLL INDIUM
NITRIDE AND RELATED ALLOYS 17 INN NANOCOLUMNS 599 /. GRANDAL, M. A.
SAENCHEZ-GARCIA, E. CALLEJA, S. LAZIC, E. GALLARDO, J. M. CALLEJA, E.
LUNA, A. TRAMPERT, M. NIEBELSCHIITZ, V. CIMALLA, AND O. AMBACHER 17.1
INTRODUCTION 599 17.2 GROWTH OF INN NANOCOLUMNS ON SILICON SUBSTRATES
601 17.3 STRAIN RELAXATION IN INN NANOCOLUMNS GROWN ON SI( 111) 603 17.4
INN NANOCOLUMNS GROWN ON SI( 100) 605 17.5 ELECTRON ACCUMULATION IN INN
NANOCOLUMNS 607 17.6 PHONON-PLASMON COUPLING IN INN NANOCOLUMNS 609 17.7
CONCLUSIONS 611 REFERENCES 612 INDEX 617
|
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| discipline | Chemie / Pharmazie |
| format | Book |
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| id | DE-604.BV036081409 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T22:11:07Z |
| institution | BVB |
| isbn | 9781420078091 1420078097 9781420078107 1420078100 |
| language | English |
| lccn | 2009018061 |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-018972480 |
| oclc_num | 698808354 |
| open_access_boolean | |
| owner | DE-83 |
| owner_facet | DE-83 |
| physical | xviii, 628 S. Ill. |
| publishDate | 2010 |
| publishDateSearch | 2010 |
| publishDateSort | 2010 |
| publisher | CRC Press/Taylor & Francis |
| record_format | marc |
| spelling | Indium nitride and related alloys edited by T.D. Veal, C.F. McConville, W.J. Schaff Boca Raton CRC Press/Taylor & Francis 2010 xviii, 628 S. Ill. txt rdacontent n rdamedia nc rdacarrier Includes bibliographical references and index Indium Indium alloys Nitrides Semiconductors Materials Veal, Tim D. Sonstige oth GBV Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=018972480&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Indium nitride and related alloys Indium Indium alloys Nitrides Semiconductors Materials |
| title | Indium nitride and related alloys |
| title_auth | Indium nitride and related alloys |
| title_exact_search | Indium nitride and related alloys |
| title_full | Indium nitride and related alloys edited by T.D. Veal, C.F. McConville, W.J. Schaff |
| title_fullStr | Indium nitride and related alloys edited by T.D. Veal, C.F. McConville, W.J. Schaff |
| title_full_unstemmed | Indium nitride and related alloys edited by T.D. Veal, C.F. McConville, W.J. Schaff |
| title_short | Indium nitride and related alloys |
| title_sort | indium nitride and related alloys |
| topic | Indium Indium alloys Nitrides Semiconductors Materials |
| topic_facet | Indium Indium alloys Nitrides Semiconductors Materials |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=018972480&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| work_keys_str_mv | AT vealtimd indiumnitrideandrelatedalloys |