Basic semiconductor physics:
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Buch |
| Sprache: | English |
| Veröffentlicht: |
Berlin [u.a.]
Springer
2010
|
| Ausgabe: | 2. ed. |
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | Literaturverz. S. [549] - 562 |
| Beschreibung: | XV, 570 S. graph. Darst. |
| ISBN: | 9783642033025 9783642033032 |
Internformat
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| 250 | |a 2. ed. | ||
| 264 | 1 | |a Berlin [u.a.] |b Springer |c 2010 | |
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Datensatz im Suchindex
| _version_ | 1804141114788151296 |
|---|---|
| adam_text | 3.5.3 ELECTRON MOTION AND EFFECTIVE MASS 96 CONTENTS ENERGY BAND
STRUCTURES OF SEMICONDUCTORS 1 1.1 FREE-ELECTRON MODEL 1 1.2 BLOCH
THEOREM 3 1.3 NEARLY FREE ELECTRON APPROXIMATION 4 1.4 REDUCED ZONE
SCHEME 8 1.5 FREE-ELECTRON BANDS (EMPTY-LATTICE BANDS) 9 1.6
PSEUDOPOTENTIAL METHOD 13 1.7 K * P PERTURBATION 19 1.8 DENSITY OF
STATES 25 CYCLOTRON RESONANCE AND ENERGY BAND STRUCTURES 29 2.1
CYCLOTRON RESONANCE 29 2.2 ANALYSIS OF VALENCE BANDS 38 2.3 SPIN-ORBIT
INTERACTION 43 2.4 NON-PARABOLICITY OF THE CONDUCTION BAND 51 2.5
ELECTRON MOTION IN A MAGNETIC FIELD AND LANDAU LEVELS 54 2.5.1 LANDAU
LEVELS 54 2.5.2 LANDAU LEVELS OF A NON-PARABOLIC BAND 61 2.5.3 LANDAU
LEVELS OF THE VALENCE BANDS 65 WANNIER FUNCTION AND EFFECTIVE MASS
APPROXIMATION 73 3.1 WANNIER FUNCTION 73 3.2 EFFECTIVE-MASS
APPROXIMATION 75 3.3 SHALLOW IMPURITY LEVELS 80 3.4 IMPURITY LEVELS IN
GE AND SI 83 3.4.1 VALLEY-ORBIT INTERACTION 86 3.4.2 CENTRAL CELL
CORRECTION 87 3.5 ELECTRON MOTION UNDER AN EXTERNAL FIELD 89 3.5.1 GROUP
VELOCITY 90 3.5.2 ELECTRON MOTION UNDER AN EXTERNAL FORCE 93
BIBLIOGRAFISCHE INFORMATIONEN HTTP://D-NB.INFO/995338213 DIGITALISIERT
DURCH XII CONTENTS 4 OPTICAL PROPERTIES 1 99 4.1 REFLECTION AND
ABSORPTION 99 4.2 DIRECT TRANSITION AND ABSORPTION COEFFICIENT 103 4.3
JOINT DENSITY OF STATES 105 4.4 INDIRECT TRANSITION 110 4.5 EXCITON 116
4.5.1 DIRECT EXCITON 116 4.5.2 INDIRECT EXCITON 125 4.6 DIELECTRIC
FUNCTION 127 4.6.1 E O , E O + A O EDGE 130 4.6.2 E X AND E 1 + AX EDGE
132 4.6.3 E 2 EDGE 133 4.6.4 EXCITON 133 4.7 PIEZOBIREFRINGENCE 135
4.7.1 PHENOMENOLOGICAL THEORY OF PIEZOBIREFRINGENCE 135 4.7.2
DEFORMATION POTENTIAL THEORY 136 4.7.3 STRESS-INDUCED CHANGE IN ENERGY
BAND STRUCTURE 140 5 OPTICAL PROPERTIES 2 147 5.1 MODULATION
SPECTROSCOPY 147 5.1.1 ELECTRO-OPTIC EFFECT 147 5.1.2 FRANZ-KELDYSH
EFFECT 149 5.1.3 MODULATION SPECTROSCOPY 153 5.1.4 THEORY OF
ELECTROREFLECTANCE AND THIRD-DERIVATIVE FORM OF ASPNES 157 5.2 RAMAN
SCATTERING 161 5.2.1 SELECTION RULE OF RAMAN SCATTERING 167 5.2.2
QUANTUM MECHANICAL THEORY OF RAMAN SCATTERING .... 172 5.2.3 RESONANT
RAMAN SCATTERING 177 5.3 BRILLOUIN SCATTERING 180 5.3. CONTENTS XIII 6.3
SCATTERING PROBABILITY AND TRANSITION MATRIX ELEMENT 230 6.3.1
TRANSITION MATRIX ELEMENT 230 6.3.2 DEFORMATION POTENTIAL SCATTERING
(ACOUSTIC PHONON SCATTERING) 233 6.3.3 IONIZED IMPURITY SCATTERING 235
6.3.4 PIEZOELECTRIC POTENTIAL SCATTERING 240 6.3.5 NON-POLAR OPTICAL
PHONON SCATTERING 242 6.3.6 POLAR OPTICAL PHONON SCATTERING 243 6.3.7
INTER-VALLEY PHONON SCATTERING 248 6.3.8 DEFORMATION POTENTIAL IN
DEGENERATE BANDS 249 6.3.9 THEORETICAL CALCULATION OF DEFORMATION
POTENTIALS 251 6.3.10 ELECTRON-ELECTRON INTERACTION AND PLASMON
SCATTERING .256 6.3.11 ALLOY SCATTERING 263 6.4 SCATTERING RATE AND
RELAXATION TIME 264 6.4.1 ACOUSTIC PHONON SCATTERING 268 6.4.2 NON-POLAR
OPTICAL PHONON SCATTERING 271 6.4.3 POLAR OPTICAL PHONON SCATTERING 273
6.4.4 PIEZOELECTRIC POTENTIAL SCATTERING 274 6.4.5 INTER-VALLEY PHONON
SCATTERING 275 6.4.6 IONIZED IMPURITY SCATTERING 276 6.4.7 NEUTRAL
IMPURITY SCATTERING 277 6.4.8 PLASMON SCATTERING 278 6.4.9 ALLOY
SCATTERING 279 6.5 MOBILITY 279 6.5.1 ACOUSTIC PHONON SCATTERING 280
6.5.2 NON-POLAR OPTICAL PHONON SCATTERING 280 6.5.3 POLAR OPTICAL PHONON
SCATTERING 283 6.5.4 PIEZOELECTRIC POTENTIAL SCATTERING 283 6.5.5
INTER-VALLEY PHONON SCATTERING 284 6.5.6 IONIZED IMPURITY SCATTERING 285
6.5.7 NEUTRAL IMPURITY SCATTERING 286 6.5.8 ALLOY SCATTERING 286
MAGNETOTRANSPORT PHENOMENA 28 XIV CONTENTS 7.4.1 EXPERIMENTS AND THEORY
OF MAGNETOPHONON RESONANCE 312 7.4.2 VARIOUS TYPES OF MAGNETOPHONON
RESONANCE 319 7.4.3 MAGNETOPHONON RESONANCE UNDER HIGH ELECTRIC AND HIGH
MAGNETIC FIELDS 324 7.4.4 POLARON EFFECT 329 8 QUANTUM STRUCTURES 333
8.1 HISTORICAL BACKGROUND 333 8.2 TWO-DIMENSIONAL ELECTRON GAS SYSTEMS
334 8.2.1 TWO-DIMENSIONAL ELECTRON GAS IN MOS INVERSION LAYER 334 8.2.2
QUANTUM WELLS AND HEMT 343 8.3 TRANSPORT PHENOMENA IN A TWO-DIMENSIONAL
ELECTRON GAS.... 351 8.3.1 FUNDAMENTAL EQUATIONS 351 8.3.2 SCATTERING
RATE 353 8.3.3 MOBILITY OF A TWO-DIMENSIONAL ELECTRON GAS 378 8.4
SUPERLATTICES 386 8.4.1 KRONIG-PENNEY MODEL 386 8.4.2 EFFECT OF
BRILLOUIN ZONE FOLDING 388 8.4.3 TIGHT BINDING APPROXIMATION 391 8.4.4
SP 3 S* TIGHT BINDING APPROXIMATION 393 8.4.5 ENERGY BAND CALCULATIONS
FOR SUPERLATTICES 395 8.4.6 SECOND NEAREST-NEIGHBOR SP 3 TIGHT BINDING
APPROXIMATION 400 8.5 MESOSCOPIC PHENOMENA 406 8.5.1 MESOSCOPIC REGION
406 8.5.2 DEFINITION OF MESOSCOPIC REGION 410 8.5.3 LANDAUER FORMULA AND
BUETTIKER-LANDAUER FORMULA .... 412 8.5.4 RESEARCH IN THE MESOSCOPIC
REGION 417 8.5.5 AHARONOV-BOHM EFFECT (AB EFFECT) 417 8.5.6 BALLISTIC
ELECTRON TRANSPORT 419 8.6 QUANTUM HALL EFFECT 421 8. CONTENTS XV 9
LIGHT EMISSION AND LASER 455 9.1 EINSTEIN COEFFICIENTS A AND B 456 9.2
SPONTANEOUS EMISSION AND STIMULATED EMISSION 458 9.3 BAND TAIL EFFECT
464 9.4 LUMINESCENCE 468 9.4.1 LUMINESCENCE DUE TO BAND-TO-BAND
TRANSITION 469 9.4.2 LUMINESCENCE DUE TO EXCITONS 470 9.4.3 LUMINESCENCE
VIA IMPURITIES 472 9.4.4 LUMINESCENCE IN GAP AND GAASP VIA N TRAPS 477
9.4.5 LUMINESCENCE FROM GALNNAS 479 9.4.6 LIGHT EMITTING DIODES (LEDS)
IN VISIBLE REGION 481 9.5 HETEROSTRUCTURE OPTICAL WAVEGUIDE 482 9.5.1
WAVE EQUATIONS FOR PLANAR WAVEGUIDE 484 9.5.2 TRANSVERSE ELECTRIC MODES
487 9.5.3 TRANSVERSE MAGNETIC MODES 489 9.5.4 EFFECTIVE REFRACTIVE INDEX
490 9.5.5 CONFINEMENT FACTOR 492 9.5.6 LASER OSCILLATIONS 493 9.6
STIMULATED EMISSION IN QUANTUM WELL STRUCTURES 496 9.6.1 CONFINEMENT IN
QUANTUM WELL 499 9.6.2 OPTICAL TRANSITION IN QUANTUM WELL STRUCTURES 503
9.6.3 REDUCED DENSITY OF STATES AND GAIN 507 9.6.4 STRAIN EFFECT 510 9.7
WURTZITE SEMICONDUCTOR LASERS 515 APPENDICES 525 A DELTA FUNCTION AND
FOURIER TRANSFORM 525 A.I DIRAC DELTA FUNCTION 525 A.2 CYCLIC BOUNDARY
CONDITION AND DELTA FUNCTION 527 A.3 FOURIER TRANSFORM 530 B UNIAXIAL
STRESS AND STRAIN COMPONENTS IN CUBIC CRYSTALS .... 531 C BOSON
OPERATORS 535 D
|
| any_adam_object | 1 |
| author | Hamaguchi, Chihiro 1937- |
| author_GND | (DE-588)122813251 |
| author_facet | Hamaguchi, Chihiro 1937- |
| author_role | aut |
| author_sort | Hamaguchi, Chihiro 1937- |
| author_variant | c h ch |
| building | Verbundindex |
| bvnumber | BV036066792 |
| classification_rvk | UP 2800 |
| classification_tum | PHY 685f |
| ctrlnum | (OCoLC)541040847 (DE-599)DNB995338213 |
| dewey-full | 537.622 |
| dewey-hundreds | 500 - Natural sciences and mathematics |
| dewey-ones | 537 - Electricity and electronics |
| dewey-raw | 537.622 |
| dewey-search | 537.622 |
| dewey-sort | 3537.622 |
| dewey-tens | 530 - Physics |
| discipline | Physik |
| edition | 2. ed. |
| format | Book |
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| id | DE-604.BV036066792 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T22:10:44Z |
| institution | BVB |
| isbn | 9783642033025 9783642033032 |
| language | English |
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| owner_facet | DE-703 DE-1050 DE-83 DE-29T DE-11 DE-91G DE-BY-TUM DE-634 DE-20 DE-573 DE-19 DE-BY-UBM |
| physical | XV, 570 S. graph. Darst. |
| publishDate | 2010 |
| publishDateSearch | 2010 |
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| publisher | Springer |
| record_format | marc |
| spelling | Hamaguchi, Chihiro 1937- Verfasser (DE-588)122813251 aut Basic semiconductor physics Chihiro Hamaguchi 2. ed. Berlin [u.a.] Springer 2010 XV, 570 S. graph. Darst. txt rdacontent n rdamedia nc rdacarrier Literaturverz. S. [549] - 562 Halbleiterphysik (DE-588)4113829-6 gnd rswk-swf 1\p (DE-588)4123623-3 Lehrbuch gnd-content Halbleiterphysik (DE-588)4113829-6 s DE-604 DNB Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=018958148&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
| spellingShingle | Hamaguchi, Chihiro 1937- Basic semiconductor physics Halbleiterphysik (DE-588)4113829-6 gnd |
| subject_GND | (DE-588)4113829-6 (DE-588)4123623-3 |
| title | Basic semiconductor physics |
| title_auth | Basic semiconductor physics |
| title_exact_search | Basic semiconductor physics |
| title_full | Basic semiconductor physics Chihiro Hamaguchi |
| title_fullStr | Basic semiconductor physics Chihiro Hamaguchi |
| title_full_unstemmed | Basic semiconductor physics Chihiro Hamaguchi |
| title_short | Basic semiconductor physics |
| title_sort | basic semiconductor physics |
| topic | Halbleiterphysik (DE-588)4113829-6 gnd |
| topic_facet | Halbleiterphysik Lehrbuch |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=018958148&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
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