Surfaces and interfaces of electronic materials:
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Buch |
| Sprache: | English |
| Veröffentlicht: |
Weinheim
Wiley
2010
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| Schlagworte: | |
| Online-Zugang: | Inhaltstext Inhaltsverzeichnis |
| Beschreibung: | XVII, 570 S. Ill., graph. Darst. |
| ISBN: | 9783527409150 |
Internformat
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Datensatz im Suchindex
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CONTENTS PREFACE XVII 1 INTRODUCTION 1 1.1 SURFACE AND INTERFACES IN
EVERYDAY LIFE 1 1.2 SURFACES AND INTERFACES IN ELECTRONICS TECHNOLOGY 2
PROBLEMS 7 REFERENCES 8 2 HISTORICAL BACKGROUND 9 2.1 CONTACT
ELECTRIFICATION AND THE DEVELOPMENT OF SOLID-STATE CONCEPTS 9 2.2
HIGH-PURITY SEMICONDUCTOR CRYSTALS 10 2.3 DEVELOPMENT OF THE TRANSISTOR
10 2.4 THE SURFACE SCIENCE ERA 12 2.5 ADVANCES IN CRYSTAL GROWTH
TECHNIQUES 13 2.6 FUTURE ELECTRONICS 15 PROBLEMS 15 REFERENCES 16 3
ELECTRICAL MEASUREMENTS 19 3.1 SCHOTTKY BARRIER OVERVIEW 19 3.2 IDEAL
SCHORTKY BARRIERS 20 3.3 REAL SCHORTKY BARRIERS 22 3.4 SCHOTTKY BARRIER
HEIGHT MEASUREMENTS 25 3.4.1 CURRENT-VOLTAGE (}-V) TECHNIQUE 25 3.4.2
CAPACITANCE-VOLTAGE (C-V) TECHNIQUE 28 3.4.3 INTERNAL PHOTOEMISSION
SPECTROSCOPY (IPS) 29 3.5 SUMMARY 33 PROBLEMS 33 BIBLIOGRAFISCHE
INFORMATIONEN HTTP://D-NB.INFO/996919317 DIGITALISIERT DURCH VI I
CONTENTS 4 INTERFACE STATES 37 4.1 INTERFACE STATE MODELS 37 4.2 SIMPLE
MODEL CALCULATION OF ELECTRONIC SURFACE STATES 39 4.3 INTRINSIC SURFACE
STATES 42 4.3.1 EXPERIMENTAL APPROACHES 42 4.3.2 THEORETICAL APPROACHES
43 4.3.3 INTRINSIC SURFACE-STATE MODELS 44 4.3.4 INTRINSIC SURFACE
STATES OF SILICON 45 4.3.5 INTRINSIC SURFACE STATES OF COMPOUND
SEMICONDUCTORS 45 4.3.6 DEPENDENCE ON SURFACE RECONSTRUCTION 48 4.3.7
INTRINSIC SURFACE-STATE SUMMARY 52 4.4 EXTRINSIC SURFACE STATES 52 4.4.1
WEAKLY INTERACTING METAL-SEMICONDUCTOR INTERFACES 52 4.4.2 EXTRINSIC
FEATURES 55 4.4.3 SCHORTKY BARRIER FORMATION AND THERMODYNAMICS 55 ***
EXTRINSIC SURFACE-STATE SUMMARY 62 4.5 CHAPTER SUMMARY 62 PROBLEMS 63
REFERENCES 63 5 ULTRAHIGH VACUUM TECHNOLOGY 67 5.1 ULTRAHIGH VACUUM
VESSELS 67 CONTENTS VII 7 PHOTOEMISSION SPECTROSCOPY 93 7.1 THE
PHOTOELECTRIC EFFECT 93 7.2 THE OPTICAL EXCITATION PROCESS 95 7.3
PHOTOIONIZATION CROSS SECTION 95 7.4 DENSITY OF STATES 96 7.5
EXPERIMENTAL SPECTRUM 96 7.6 EXPERIMENTAL ENERGY DISTRIBUTION CURVES 97
7.7 MEASURED PHOTOIONIZATION CROSS SECTIONS 100 7.8 PRINCIPLES OF X-RAY
PHOTOELECTRON SPECTROSCOPY 112 7.8.1 CHEMICAL SPECIES IDENTIFICATION 112
7.8.2 CHEMICAL SHIFTS IN BINDING 314 7.8.3 DISTINCTION BETWEEN NEAR-AND
SUBSURFACE SPECIES 114 7.8.4 CHARGING AND BAND BENDING 115 7.9
EXCITATION SOURCES 119 7.10 ELECTRON ENERGY ANALYZERS 122 7.11 SUMMARY
125 PROBLEMS 125 REFERENCES 126 8 PHOTOEMISSION WITH SOFT X-RAYS 129 8.1
SOFT X-RAY SPECTROSCOPY TECHNIQUES 129 8.2 SYNCHROTRON RADIATION SOURCES
129 8.3 SOFT *-RAY PHOTOEMISSION SPECTROSCOPY 132 8.3.1 BASIC SURFACE
AND INTERFACE TECHNIQUES 132 VIII CONTENTS 9.4.4 AUGER ELECTRON ENERGIES
158 9.4.5 QUANTITATIVE ELEMENTAL IDENTIFICATION 160 9.5 AUGER DEPTH
PROFILING 163 9.5 SUMMARY 165 PROBLEMS 267 REFERENCES 168 10 ELECTRON
ENERGY LOSS SPECTROSCOPY 169 10.1 OVERVIEW 169 10.2 DIELECTRIC RESPONSE
THEORY 171 10.3 SURFACE PHONON SCATTERING 172 10.4 BULK AND SURFACE
PLASMON SCATTERING 174 10.5 INTERFACE ELECTRONIC TRANSITIONS 177 10.6
ATOMIC-SCALE ELECTRON ENERGY LOSS SPECTROSCOPY 180 10.7 SUMMARY 181
REFERENCES 382 11 RUTHERFORD BACKSCATTERING SPECTROMETRY 283 11.1
OVERVIEW 183 11.2 THEORY OF RUTHERFORD BACKSCATTERING 184 11.3 DEPTH
PROFILING 187 11.4 CHANNELING AND BLOCKING 190 11.5 INTERFACE STUDIES
192 11.6 SUMMARY 295 PROBLEMS 295 REFERENCES 295 12 SECONDARY ION MASS
SPECTROMETRY 197 12. CONTENTS IX 13.6 SURFACE LATTICES AND
SUPERSTRUCTURES 229 13.7 SILICON RECONSTRUCTIONS 222 13.8 III-V COMPOUND
SEMICONDUCTOR RECONSTRUCTIONS 223 13.9 REFLECTION HIGH-ENERGY ELECTRON
DIFFRACTION 227 13.8.1 RHEED OSCILLATIONS 232 13.9 SUMMARY 233 PROBLEMS
234 REFERENCES 234 14 SCANNING TUNNELING MICROSCOPY 237 14.1 OVERVIEW
237 14.2 TUNNELING THEORY 239 14.3 SURFACE STRUCTURE 244 14.4 ATOMIC
FORCE MICROSCOPY 246 14.5 BALLISTIC ELECTRON EMISSION MICROSCOPY 249
14.6 ATOMIC POSITIONING 252 14.7 SUMMARY 253 PROBLEMS 254 REFERENCES 254
15 OPTICAL SPECTROSCOPIES 257 15.1 OVERVIEW 257 15.2 OPTICAL ABSORPTION
257 15.3 MODULATION TECHNIQUES 260 15.4 MULTIPLE SURFACE INTERACTION
TECHNIQUES 262 15.5 SPECTROSCOPIC ELLIPSOMETRY 263 15.6 SURFACE-ENHANCED
RAMAN SPECTROSCOPY 264 X CONTENTS 16.2.4 ELECTRON SCATTERING LENGTH 285
16.2.5 SEMICONDUCTOR IONIZATION ENERGIES 286 16.2.6 UNIVERSAL
RANGE-ENERGY RELATION 288 16.3 MONTE CARLO SIMULATIONS 292 16.4
DEPTH-RESOLVED CATHODOLUMINESCENCE SPECTROSCOPY 293 16.4.1 SURFACE
ELECTRONIC STATES 295 16.4.2 INTERFACE ELECTRONIC STATES 295 16.4.3
LOCALIZED CLS IN THREE DIMENSIONS 297 16.4.3.1 WAFER-SCALE ANALYSIS OF
2-DEG LAYERS 298 16.4.3.2 SCHOTTKY BARRIERS 300 16.4.3.3 ELECTRONIC
DEVICES 301 16.5 SUMMARY 302 PROBLEMS 303 REFERENCES 304 FURTHER READING
304 17 ELECTRONIC MATERIALS'SURFACES 305 17.1 OVERVIEW 305 17.2
GEOMETRIC STRUCTURE 305 17.2.1 SURFACE RELAXATION AND RECONSTRUCTION 305
17.2.2 EXTENDED GEOMETRIC STRUCTURES 306 17.2.2.1 DOMAINS 306 17.2.2.2
STEPS 306 17.2.2.3 DEFECTS 310 17.,3 CHEMICAL STRUCTURE 312 17.3.1
CRYSTAL GROWTH 311 CONTENTS XI 18.2.3 METAL ADSORBATES ON GAAS 329
18.2.4 EPITAXICAL OVERLAYERS 332 18.2.4.1 ELEMENTAL METAL OVERLAYERS 332
18.2.4.2 METAL SUICIDES ON SI 332 18.2.4.3 METAL EPITAXY ON COMPOUND
SEMICONDUCTORS 333 18.2.4.4 EPITAXICAL METAL-SEMICONDUCTOR APPLICATIONS
335 18.3 CHEMICAL PROPERTIES 336 18.3.1 METAL OVERLAYERS ON
SEMICONDUCTORS 336 18.3.1.1 OVERLAYER GROWTH MODES 337 18.3.1.2
THERMODYNAMIC FACTORS 337 18.3.1.3 NONEQUILIBRIUM ENERGY PROCESSING 338
18.3.2 MACROSCOPIC INTERFACE REACTION KINETICS 339 18.3.2.1 SUICIDE
PHASE FORMATION 339 18.3.2.2 THIN FILM VERSUS BULK DIFFUSION 341
18.3.2.3 MECHANICAL AND MORPHOLOGICAL EFFECTS 343 18.3.2.4 DIFFUSION
BARRIERS 343 18.3.2.5 ATOMIC-SCALE METAL-SI REACTIONS 345 18.3.3
COMPOUND SEMICONDUCTOR REACTIONS 345 18.4 ELECTRONIC PROPERTIES 346
18.4.1 PHYSISORPTION 346 18.4.2 CHEMISORPTION 347 18.4.3 WORK FUNCTION
EFFECTS 350 18.4.3.1 CHARGE TRANSFER 350 XII CONTENTS 19.2.4.2 SENSOR
SENSITIVITY 377 19.2.5 OTHER TRANSDUCERS 377 19.2.6 ELECTRONIC MATERIALS
FOR SENSORS 379 19.3 SUMMARY 379 PROBLEMS 380 REFERENCES 381 20
SEMICONDUCTOR HETEROJUNCTIONS 383 20.1 OVERVIEW 383 20.2 GEOMETRIC
STRUCTURE 383 20.2.1 EPITAXIAL GROWTH 383 20.2.2 LATTICE MATCHING 384
20.2.2.1 LATTICE MATCH AND ALLOY COMPOSITION 384 20.2.2.2
LATTICE-MISMATCHED INTERFACES 386 20.2.2.3 DISLOCATIONS AND STRAIN 389
20.2.3 TWO-DIMENSIONAL ELECTRON GAS HETEROJUNCTIONS 393 20.2.4 STRAINED
LAYER SUPERLATTICES 394 20.2.4.1 SUPERLATTICE ENERGY BANDS 394 20.2.4.2
STRAIN-INDUCED POLARIZATION FIELDS 396 20.3 CHEMICAL STRUCTURE 397
20.3.1 INTERDIFFUSION 397 20.3.1.1 IV-IV INTERFACES 397 20.3.1.2 1II-V
COMPOUND HETEROJUNCTIONS 398 CONTENTS XIII 20.4.6 INTERFACE
CONTRIBUTIONS TO BAND OFFSETS 423 20.4.6.1 GROWTH SEQUENCE 424 20.4.6.2
CRYSTALLOGRAPHIC ORIENTATION 426 20.4.6.3 SURFACE RECONSTRUCTION: BAND
BENDING VERSUS OFFSETS 427 20.4.6.4 SURFACE RECONSTRUCTION: INTERFACE
BONDING 428 20.4.7 THEORETICAL METHODS IN BAND OFFSET ENGINEERING 429
20.4.7.1 FIRST-PRINCIPLES CALCULATIONS 429 20.4.7.2 MATHEMATICAL
APPROACH 429 20.4.7.3 ALTERNATIVE METHODS 432 20.4.8 APPLICATION TO
HETEROVALENT INTERFACES 432 20.4.8.1 POLARITY DEPENDENCE 432 20.4.8.2
INTERFACE ATOMIC MIXING 433 20.4.8.3 ATOMIC INTERLAYERS 434 20.4.9
PRACTICAL BAND OFFSET ENGINEERING 435 20.4.9.1 SPATIALLY-CONFINED
NONSTOICHIOMETRY 436 20.4.9.2 CHEMICAL STABILITY, CROSS-DOPING, AND
INTERFACE STATES 437 20.4.9.3 "DELTA" DOPING 438 20.5 SUMMARY 439
PROBLEMS 440 REFERENCES 441 FURTHER READING 445 2 XIV CONTENTS 21.6.1.3
N VERSUS P-TYPE BARRIERS 474 21.6.1.4 SI, GE SUMMARY 475 21.6.2 METALS
ON III*V COMPOUND SEMICONDUCTORS 475 21.6.2.1 GAAS(LLO) PINNED SCHOTTKY
BARRIERS 476 21.6.3 INP(LLO) UNPINNED SCHOTTKY BARRIERS 479 21.6.3.1
CLEAN SURFACES 479 21.6.3.2 MACROSCOPIC MEASUREMENTS 479 21.6.4 GAN
SCHOTTKY BARRIERS 480 21.6.4.1 OTHER BINARY III-V SEMICONDUCTORS 481
21.6.5 TERNARY III-V SEMICONDUCTORS 482 21.6.6 METALS ON *-VI COMPOUND
SEMICONDUCTORS 484 21.6.6.1 SULFIDES, SELENIDES, AND TELLURIDES 485
21.6.6.2 ZNO: DEPENDENCE ON METALS 485 21.6.6.3 ZNO: DEPENDENCE ON
NATIVE POINT DEFECTS 485 21.6.6.4 ZNO: DEPENDENCE ON POLARITY 490 21.6.7
METALS ON IV-IV, IV-VI, AND III-VI COMPOUND SEMICONDUCTORS 490 21.6.8
COMPOUND SEMICONDUCTOR SUMMARY 491 21.7 INTERFACE PASSIVATION AND
CONTROL 492 21.7.1 MACROSCOPIC METHODS OF CONTACT FORMATION 492 21.7.2
PROCESSING CONTACTS 493 CONTENTS XV 22.3 NEW DIRECTIONS 528 22.3.1
HIGH-K DIELECTRICS 529 22.3.2 COMPLEX OXIDES 530 22.3.3 SPINTRONICS 532
22.3.4 NANOSCALE CIRCUITS 534 22.3.5 QUANTUM-SCALE INTERFACES 534 22.4
SYNOPSIS 536 REFERENCES 537 APPENDICES 539 APPENDIX 1 : GLOSSARY OF
COMMONLY USED SYMBOLS 542 APPENDIX 2: TABLE OF ACRONYMS 544 APPENDIX 3:
TABLE OF PHYSICAL CONSTANTS AND CONVERSION FACTORS 548 APPENDIX 4:
SEMICONDUCTOR PROPERTIES 549 APPENDIX 5: TABLE OF PREFERRED WORK
FUNCTIONS 552 APPENDIX 6: DERIVATION OF FERMI'S GOLDEN RULE 552 APPENDIX
7: DERIVATION OF PHOTOEMISSION CROSS SECTION FOR A SQUARE WELL 555 INDEX
557 |
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| dewey-tens | 620 - Engineering and allied operations |
| discipline | Physik Elektrotechnik Elektrotechnik / Elektronik / Nachrichtentechnik |
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| spelling | Brillson, Leonard J. Verfasser aut Surfaces and interfaces of electronic materials Leonard J. Brillson Weinheim Wiley 2010 XVII, 570 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Electronics Materials Surfaces (Technology) Grenzfläche (DE-588)4021991-4 gnd rswk-swf Elektronisches Bauelement (DE-588)4014360-0 gnd rswk-swf Halbleitergrenzfläche (DE-588)4158802-2 gnd rswk-swf (DE-588)4123623-3 Lehrbuch gnd-content Halbleitergrenzfläche (DE-588)4158802-2 s DE-604 Elektronisches Bauelement (DE-588)4014360-0 s Grenzfläche (DE-588)4021991-4 s text/html http://deposit.dnb.de/cgi-bin/dokserv?id=3357029&prov=M&dok_var=1&dok_ext=htm Inhaltstext DNB Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=018956073&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Brillson, Leonard J. Surfaces and interfaces of electronic materials Electronics Materials Surfaces (Technology) Grenzfläche (DE-588)4021991-4 gnd Elektronisches Bauelement (DE-588)4014360-0 gnd Halbleitergrenzfläche (DE-588)4158802-2 gnd |
| subject_GND | (DE-588)4021991-4 (DE-588)4014360-0 (DE-588)4158802-2 (DE-588)4123623-3 |
| title | Surfaces and interfaces of electronic materials |
| title_auth | Surfaces and interfaces of electronic materials |
| title_exact_search | Surfaces and interfaces of electronic materials |
| title_full | Surfaces and interfaces of electronic materials Leonard J. Brillson |
| title_fullStr | Surfaces and interfaces of electronic materials Leonard J. Brillson |
| title_full_unstemmed | Surfaces and interfaces of electronic materials Leonard J. Brillson |
| title_short | Surfaces and interfaces of electronic materials |
| title_sort | surfaces and interfaces of electronic materials |
| topic | Electronics Materials Surfaces (Technology) Grenzfläche (DE-588)4021991-4 gnd Elektronisches Bauelement (DE-588)4014360-0 gnd Halbleitergrenzfläche (DE-588)4158802-2 gnd |
| topic_facet | Electronics Materials Surfaces (Technology) Grenzfläche Elektronisches Bauelement Halbleitergrenzfläche Lehrbuch |
| url | http://deposit.dnb.de/cgi-bin/dokserv?id=3357029&prov=M&dok_var=1&dok_ext=htm http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=018956073&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| work_keys_str_mv | AT brillsonleonardj surfacesandinterfacesofelectronicmaterials |