Introduction to space charge effects in semiconductors:
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Buch |
| Sprache: | English |
| Veröffentlicht: |
Berlin [u.a.]
Springer
2010
|
| Schriftenreihe: | Springer series in solid state sciences
160 |
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | XIII, 331 S. graph. Darst. |
| ISBN: | 9783642022357 |
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| 245 | 1 | 0 | |a Introduction to space charge effects in semiconductors |c Karl W. Böer |
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Datensatz im Suchindex
| _version_ | 1804141052323430400 |
|---|---|
| adam_text | Titel: Introduction to space charge effects in semiconductors
Autor: Böer, Karl W.
Jahr: 2010
Contents
Space Charges in Insulators ............................... 1
1.1 Basic Electrostatic Relations.............................. 1
1.1.1 The Poisson Equation.............................. 2
1.2 Fixed Space-Charge Distributions ......................... 5
1.2.1 Sinusoidal Continuous Space-Charge Distribution...... 5
1.2.2 Abruptly Changing Space-Charge Distribution........ 6
1-2.3 Space-Charge Double Layer with Neutral Interlayer.... 9
1.2.4 Asymmetric Space Charge Double Layer............. 10
1-2.5 Single Space-Charge Layer.......................... 11
1.2.6 Space-Charge Double Layer, Nonvanishing Net Charge . 12
Summary and Emphasis...................................... 13
Exercise Problems ........................................... 13
Creation of Space-Charge Regions in Solids................ 15
2.1 One Carrier Abrupt Step-Junction......................... 17
2.1.1 Electron Density, Space Charge, and Field Distribution 18
2.2 Significance of Basic Barrier or Junction Variables........... 31
2.2.1 Interdependence of Carrier Densities, Fields,
and Currents..................................... 31
2.3 Space-Charge Limited Current............................ 33
2.3.1 Majority Carrier Injection.......................... 35
2.3.2 Minority Carrier Injection.......................... 36
2.3.3 Trap-Controlled Space-Charge-Limited Currents....... 36
Summary and Emphasis...................................... 37
Exercise Problems ........................................... 38
The Schottky Barrier...................................... 41
3.1 The Classical Schottky Barrier............................ 41
3.1.1 Schottky Approximation: Field and Potential
Distributions ..................................... 42
3.1.2 Zero Current Solution of the Electron Distribution..... 46
X Contents
3.1.3 Nonvanishing Currents............................. 49
3.1.4 Current-Voltage Characteristics..................... 55
3.2 Modified Schottky Barrier................................ 57
3.2.1 The Schottky Barrier with Current-Dependent
Interface Density.................................. 57
3.2.2 Schottky Barrier with Two or More Donor Levels ..... 65
3.2.3 Schottky Barriers with Multiple Donors,
and Field Excitation .............................. 75
3.3 Schottky Barrier with Optical Excitation................... 77
3.3.1 Partially Compensated Schottky Barrier ............. 77
3.3.2 Compensated Barrier with Optical Excitation ........ 77
3.3.3 Schottky Barrier with Optical Excitation
and Field Quenching............................... 79
3.4 Quasi-Schottky Barrier as Part of a Heterojunction.......... 81
3.4.1 Electron Boundary Condition at the Heterojunction
Interface......................................... 83
3.4.2 Current-Voltage Characteristics for an Abrupt
Heterojunction.................................... 85
3.4.3 Heterojunction with Interface Recombination......... 87
Summary and Emphasis...................................... 88
Exercise Problems ........................................... 90
4 Minority Carriers in Barriers.............................. 93
4.1 Carrier Generation and Recombination..................... 94
4.1.1 Thermal Excitation................................ 95
4.1.2 Optical Excitation................................. 96
4.1.3 Field Ionization................................... 97
4.2 Trapping and Recombination .............................100
4.2.1 Electron and Hole Traps ...........................100
4.2.2 Recombination Centers.............................101
4.3 Quasi-Fermi Levels, Demarcation Lines.....................101
4.3.1 Thermal Equilibrium and Steady State...............104
4.3.2 Current Continuity................................106
4.4 Carrier Lifetimes........................................109
4.4.1 Large Generation, Optical Excitation................Ill
Summary and Emphasis......................................112
Exercise Problems ...........................................113
5 Minority Carrier Currents.................................115
5.1 Minority Carrier Currents in the Bulk......................116
5.1.1 Thermal Excitation GR-Currents....................116
5.2 GR-Current with Surface Recombination...................121
5.2.1 Thermal GR-Current with Surface Recombination.....122
5.2.2 The Effective Diffusion Velocity.....................124
Contents XI
5.2.3 Optical Excitation GR-Currents with Surface
Recombination....................................125
5.2.4 Optical Excitation GR-Currents with Recombination
at Right and Barrier at Left........................126
5.2.5 Effective Diffusion Velocity for Optical Excitation.....131
5.2.6 Optical vs. Thermal Carrier Generation..............132
5.3 Drift-Assisted GR-Currents...............................132
5.3.1 Field-Influence in the Bulk .........................132
5.3.2 Analytical Solution of Diffusion with Constant Field ... 133
5.3.3 Drift-Assisted GR-Currents Without Surface
Recombination at Right Electrode...................134
5.3.4 Total Drift-Assisted Minority Carrier Current.........136
Summary and Emphasis......................................139
Exercise Problems ...........................................140
6 Schottky Barrier in Two-Carrier Model....................143
6.1 Electron and Hole Currents in Barriers.....................143
6.1.1 Divergence-Free Electron and Hole Currents..........144
6.1.2 GR-Currents in Schottky Barrier Devices.............145
6.2 Schottky Barrier with Two Carriers .......................150
6.2.1 The Governing Set of Equations.....................151
6.2.2 Example Solutions for a Thin Device ................154
6.2.3 Schottky Barrier Device............................163
6.2.4 The Relative Contribution of Divergence-Free
and GR-Currents in Schottky Barrier Devices.........166
Summary and Emphasis......................................168
Exercise Problems ...........................................168
7 pn-Homojunctions.........................................171
7.1 Simplified pn-Junction Model.............................I71
7.1.1 Basic Features of the Simplified Model...............172
7.1.2 Simplified Junction Model in Steady State ...........174
7.1.3 Junction Capacitance..............................1^5
7.1.4 The Current-Voltage Characteristic of the Simplified
Junction.........................................I D
7.1.5 Relevance to Actual pn-Junctions...................1 8
7.2 Abrupt pn-Junction in Ge................................^
7.2.1 Governing Set of Equations and Example Parameters .. 179
7.2.2 Solution Curves for Thin Germanium pn-Junction.....180
7.2.3 The Current-Voltage Characteristic.................188
7.3 Thick pn-Junction Device (Ge) ...........................^9
7.3.1 Changes in Current Contributions
with Device Thickness.............................189
7.3.2 The Quasi-Fermi Levels of the Thicker Device.........191
7.4 Si-Homojunction........................................193
XII Contents
7.5 More Complex Homojunctions............................195
7.5.1 Linearly Doped Junction ..........................196
7.5.2 High Minority Carrier Injection.....................197
7.5.3 Series Resistance Limitation .......................197
7.5.4 Position-Dependent Material Parameters ............198
Summary and Emphasis......................................198
Exercise Problems ...........................................199
8 The Photovoltaic Effect....................................201
8.1 Enhanced Carrier Generation and Recombination
with Light..............................................202
8.1.1 Photoconductors..................................203
8.1.2 Photo-emf and Photocurrents.......................204
8.1.3 Quasi-Equilibrium Approximation ..................205
8.2 Reaction Kinetic, Balance................................206
8.2.1 Trap-Controlled Carrier Densities ...................208
8.3 Simple Model of the Photodiode...........................210
8.3.1 Derived Photodiode Parameters.....................213
8.3.2 Resistive Network Influence on the Diode
Characteristics....................................214
Summary and Emphasis......................................217
Exercise Problems ...........................................217
9 The Schottky Barrier Photodiode..........................219
9.1 A Thin Schottky-Barrier Photodiode.......................219
9.1.1 Solution Curves of the Transport Equations ..........220
9.1.2 Current-Voltage Characteristics.....................223
9.1.3 Lessons Learned from a Thin Schottky-Barrier
Photodiode.......................................223
9.1.4 Thicker Schottky Barrier Device.....................224
Summary and Emphasis......................................225
Exercise Problems ...........................................226
10 The pn-Junction with Light ...............................227
10.1 Open Circuit Conditions___.............................227
10.1.1 Thin, Symmetric Si-Diode with Abrupt Junction......228
10.2 Thin Asymmetric Si Diodes with Abrupt Junction ..........241
10.2.1 Recombination Through Charged Recombination
Centers..........................................242
10.2.2 Inhomogeneous Optical Excitation...................244
10.2.3 Asymmetric Doping...............................249
10.2.4 Thick Asymmetric Devices, Si Solar Cells ............251
10.3 Nonvanishing Bias.......................................254
10.3.1 Thin Symmetrical pn-Junction Device With Bias......255
Summary and Emphasis......................................259
Exercise Problems ...........................................261
Contents XIII
11 The Heterojunction with Light............................265
11.1 The Cu2S/CdS Solar Cell ................................267
11.1.1 The Current-Voltage Characteristics.................268
11.1.2 Space Charge Effects in the Heterojunction...........270
11.1.3 Kinetic Effects of Solar Cell Characteristics...........276
11.1.4 Influence of Interface Recombination.................281
11.1.5 Information from the Exponential A-Factor...........283
11.1.6 Lessons Learned from the CdS/Cu2S Solar Cell.......286
Summary and Emphasis......................................287
Exercise Problems ...........................................288
A External and Built-in Fields...............................289
A.l Penalties for a Simple Transport Model....................290
A.2 Built-in or External Fields................................291
A.2.1 Distributions in Built-in or External Fields...........291
A.2.2 Mobilities in Built-in or External Fields..............293
A.3 Device Cooling when Electric Energy Is Extracted
from Devices Exited with Light ...........................293
A.3.1 Detailed Energy Balance...........................294
Summary and Emphasis......................................296
B Generalized Transport Equations..........................299
B.l Modified Poisson Equation ...............................300
B.2 Continuity Equation.....................................300
A Few Words at the End .....................................300
Bibliography...................................................303
Index..........................................................317
|
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| spelling | Böer, Karl W. 1926-2018 Verfasser (DE-588)121969657 aut Introduction to space charge effects in semiconductors Karl W. Böer Berlin [u.a.] Springer 2010 XIII, 331 S. graph. Darst. txt rdacontent n rdamedia nc rdacarrier Springer series in solid state sciences 160 Photoconductivity Semiconductors Space charge Halbleiter (DE-588)4022993-2 gnd rswk-swf Sperrschicht-Fotoeffekt (DE-588)4262274-8 gnd rswk-swf Raumladung (DE-588)4177073-0 gnd rswk-swf Halbleiter (DE-588)4022993-2 s Raumladung (DE-588)4177073-0 s Sperrschicht-Fotoeffekt (DE-588)4262274-8 s DE-604 Springer series in solid state sciences 160 (DE-604)BV000016582 160 HBZ Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=018922413&sequence=000004&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Böer, Karl W. 1926-2018 Introduction to space charge effects in semiconductors Springer series in solid state sciences Photoconductivity Semiconductors Space charge Halbleiter (DE-588)4022993-2 gnd Sperrschicht-Fotoeffekt (DE-588)4262274-8 gnd Raumladung (DE-588)4177073-0 gnd |
| subject_GND | (DE-588)4022993-2 (DE-588)4262274-8 (DE-588)4177073-0 |
| title | Introduction to space charge effects in semiconductors |
| title_auth | Introduction to space charge effects in semiconductors |
| title_exact_search | Introduction to space charge effects in semiconductors |
| title_full | Introduction to space charge effects in semiconductors Karl W. Böer |
| title_fullStr | Introduction to space charge effects in semiconductors Karl W. Böer |
| title_full_unstemmed | Introduction to space charge effects in semiconductors Karl W. Böer |
| title_short | Introduction to space charge effects in semiconductors |
| title_sort | introduction to space charge effects in semiconductors |
| topic | Photoconductivity Semiconductors Space charge Halbleiter (DE-588)4022993-2 gnd Sperrschicht-Fotoeffekt (DE-588)4262274-8 gnd Raumladung (DE-588)4177073-0 gnd |
| topic_facet | Photoconductivity Semiconductors Space charge Halbleiter Sperrschicht-Fotoeffekt Raumladung |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=018922413&sequence=000004&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
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