The silicon carbide MOS capacitor: a study of defects, generation lifetimes, leakage currents, and other interesting nonidealities in the non-equilibrium SiC/SiO2 MOS capacitor
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Buch |
| Sprache: | English |
| Veröffentlicht: |
Saarbrücken
VDM Verlag Dr. Müller
2008
|
| Schlagworte: | |
| Beschreibung: | Includes bibliographical references (p. [117]-128) |
| Beschreibung: | XI, 128 S. Ill. 22 cm |
Internformat
MARC
| LEADER | 00000nam a2200000 c 4500 | ||
|---|---|---|---|
| 001 | BV035819443 | ||
| 003 | DE-604 | ||
| 005 | 20091113 | ||
| 007 | t | ||
| 008 | 091110s2008 a||| |||| 00||| eng d | ||
| 020 | |z 9783639089059 |9 978-3-639-08905-9 | ||
| 020 | |z 3639089057 |9 3-639-08905-7 | ||
| 035 | |a (OCoLC)351305917 | ||
| 035 | |a (DE-599)BVBBV035819443 | ||
| 040 | |a DE-604 |b ger |e rakwb | ||
| 041 | 0 | |a eng | |
| 049 | |a DE-29T | ||
| 050 | 0 | |a TK7871.99.M44 | |
| 082 | 0 | |a 621.38152 |b M33 | |
| 084 | |a ZN 4960 |0 (DE-625)157426: |2 rvk | ||
| 100 | 1 | |a Marinella, Matthew |e Verfasser |4 aut | |
| 245 | 1 | 0 | |a The silicon carbide MOS capacitor |b a study of defects, generation lifetimes, leakage currents, and other interesting nonidealities in the non-equilibrium SiC/SiO2 MOS capacitor |c Matthew Marinella |
| 264 | 1 | |a Saarbrücken |b VDM Verlag Dr. Müller |c 2008 | |
| 300 | |a XI, 128 S. |b Ill. |c 22 cm | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 500 | |a Includes bibliographical references (p. [117]-128) | ||
| 650 | 4 | |a Silicon carbide | |
| 650 | 4 | |a Metal oxide semiconductors | |
| 650 | 4 | |a Metal oxide semiconductors | |
| 650 | 4 | |a Silicon carbide | |
| 650 | 0 | 7 | |a MOS |0 (DE-588)4130209-6 |2 gnd |9 rswk-swf |
| 689 | 0 | 0 | |a MOS |0 (DE-588)4130209-6 |D s |
| 689 | 0 | |5 DE-604 | |
| 999 | |a oai:aleph.bib-bvb.de:BVB01-018678219 | ||
Datensatz im Suchindex
| _version_ | 1804140775025410048 |
|---|---|
| any_adam_object | |
| author | Marinella, Matthew |
| author_facet | Marinella, Matthew |
| author_role | aut |
| author_sort | Marinella, Matthew |
| author_variant | m m mm |
| building | Verbundindex |
| bvnumber | BV035819443 |
| callnumber-first | T - Technology |
| callnumber-label | TK7871 |
| callnumber-raw | TK7871.99.M44 |
| callnumber-search | TK7871.99.M44 |
| callnumber-sort | TK 47871.99 M44 |
| callnumber-subject | TK - Electrical and Nuclear Engineering |
| classification_rvk | ZN 4960 |
| ctrlnum | (OCoLC)351305917 (DE-599)BVBBV035819443 |
| dewey-full | 621.38152 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
| dewey-raw | 621.38152 |
| dewey-search | 621.38152 |
| dewey-sort | 3621.38152 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Book |
| fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01359nam a2200397 c 4500</leader><controlfield tag="001">BV035819443</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">20091113 </controlfield><controlfield tag="007">t</controlfield><controlfield tag="008">091110s2008 a||| |||| 00||| eng d</controlfield><datafield tag="020" ind1=" " ind2=" "><subfield code="z">9783639089059</subfield><subfield code="9">978-3-639-08905-9</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="z">3639089057</subfield><subfield code="9">3-639-08905-7</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)351305917</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV035819443</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-29T</subfield></datafield><datafield tag="050" ind1=" " ind2="0"><subfield code="a">TK7871.99.M44</subfield></datafield><datafield tag="082" ind1="0" ind2=" "><subfield code="a">621.38152</subfield><subfield code="b">M33</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">ZN 4960</subfield><subfield code="0">(DE-625)157426:</subfield><subfield code="2">rvk</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Marinella, Matthew</subfield><subfield code="e">Verfasser</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">The silicon carbide MOS capacitor</subfield><subfield code="b">a study of defects, generation lifetimes, leakage currents, and other interesting nonidealities in the non-equilibrium SiC/SiO2 MOS capacitor</subfield><subfield code="c">Matthew Marinella</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">Saarbrücken</subfield><subfield code="b">VDM Verlag Dr. Müller</subfield><subfield code="c">2008</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">XI, 128 S.</subfield><subfield code="b">Ill.</subfield><subfield code="c">22 cm</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">Includes bibliographical references (p. [117]-128)</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Silicon carbide</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Metal oxide semiconductors</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Metal oxide semiconductors</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Silicon carbide</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">MOS</subfield><subfield code="0">(DE-588)4130209-6</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">MOS</subfield><subfield code="0">(DE-588)4130209-6</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-018678219</subfield></datafield></record></collection> |
| id | DE-604.BV035819443 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T22:05:20Z |
| institution | BVB |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-018678219 |
| oclc_num | 351305917 |
| open_access_boolean | |
| owner | DE-29T |
| owner_facet | DE-29T |
| physical | XI, 128 S. Ill. 22 cm |
| publishDate | 2008 |
| publishDateSearch | 2008 |
| publishDateSort | 2008 |
| publisher | VDM Verlag Dr. Müller |
| record_format | marc |
| spelling | Marinella, Matthew Verfasser aut The silicon carbide MOS capacitor a study of defects, generation lifetimes, leakage currents, and other interesting nonidealities in the non-equilibrium SiC/SiO2 MOS capacitor Matthew Marinella Saarbrücken VDM Verlag Dr. Müller 2008 XI, 128 S. Ill. 22 cm txt rdacontent n rdamedia nc rdacarrier Includes bibliographical references (p. [117]-128) Silicon carbide Metal oxide semiconductors MOS (DE-588)4130209-6 gnd rswk-swf MOS (DE-588)4130209-6 s DE-604 |
| spellingShingle | Marinella, Matthew The silicon carbide MOS capacitor a study of defects, generation lifetimes, leakage currents, and other interesting nonidealities in the non-equilibrium SiC/SiO2 MOS capacitor Silicon carbide Metal oxide semiconductors MOS (DE-588)4130209-6 gnd |
| subject_GND | (DE-588)4130209-6 |
| title | The silicon carbide MOS capacitor a study of defects, generation lifetimes, leakage currents, and other interesting nonidealities in the non-equilibrium SiC/SiO2 MOS capacitor |
| title_auth | The silicon carbide MOS capacitor a study of defects, generation lifetimes, leakage currents, and other interesting nonidealities in the non-equilibrium SiC/SiO2 MOS capacitor |
| title_exact_search | The silicon carbide MOS capacitor a study of defects, generation lifetimes, leakage currents, and other interesting nonidealities in the non-equilibrium SiC/SiO2 MOS capacitor |
| title_full | The silicon carbide MOS capacitor a study of defects, generation lifetimes, leakage currents, and other interesting nonidealities in the non-equilibrium SiC/SiO2 MOS capacitor Matthew Marinella |
| title_fullStr | The silicon carbide MOS capacitor a study of defects, generation lifetimes, leakage currents, and other interesting nonidealities in the non-equilibrium SiC/SiO2 MOS capacitor Matthew Marinella |
| title_full_unstemmed | The silicon carbide MOS capacitor a study of defects, generation lifetimes, leakage currents, and other interesting nonidealities in the non-equilibrium SiC/SiO2 MOS capacitor Matthew Marinella |
| title_short | The silicon carbide MOS capacitor |
| title_sort | the silicon carbide mos capacitor a study of defects generation lifetimes leakage currents and other interesting nonidealities in the non equilibrium sic sio2 mos capacitor |
| title_sub | a study of defects, generation lifetimes, leakage currents, and other interesting nonidealities in the non-equilibrium SiC/SiO2 MOS capacitor |
| topic | Silicon carbide Metal oxide semiconductors MOS (DE-588)4130209-6 gnd |
| topic_facet | Silicon carbide Metal oxide semiconductors MOS |
| work_keys_str_mv | AT marinellamatthew thesiliconcarbidemoscapacitorastudyofdefectsgenerationlifetimesleakagecurrentsandotherinterestingnonidealitiesinthenonequilibriumsicsio2moscapacitor |