Verfügbarkeit: Technology of quantum devices

Technology of quantum devices:

Gespeichert in:

Bibliographische Detailangaben
1. Verfasser:	Razeghi, Manijeh (VerfasserIn)
Format:	Buch
Sprache:	English
Veröffentlicht:	New York [u.a.] Springer 2010
Schlagworte:	Quantenelektronik
Online-Zugang:	Inhaltsverzeichnis
Beschreibung:	XXV, 560 S. Ill., graph. Darst.
ISBN:	9781441910554

Internformat

MARC


LEADER	00000nam a2200000 c 4500
001	BV035807928
003	DE-604
005	20101215
007	t
008	091104s2010 gw ad\|\| \|\|\|\| 00\|\|\| eng d
015			\|a 09,N26,0902 \|2 dnb
016	7		\|a 994589530 \|2 DE-101
020			\|a 9781441910554 \|c GB. : ca. EUR 138.03 (freier Pr.), ca. sfr 165.00 (freier Pr.) \|9 978-1-4419-1055-4
024	3		\|a 9781441910554
028	5	2	\|a 12564897
035			\|a (OCoLC)634791914
035			\|a (DE-599)DNB994589530
040			\|a DE-604 \|b ger \|e rakddb
041	0		\|a eng
044			\|a gw \|c XA-DE-BE
049			\|a DE-703 \|a DE-11 \|a DE-83 \|a DE-20
084			\|a UH 5600 \|0 (DE-625)145666: \|2 rvk
084			\|a 620 \|2 sdnb
100	1		\|a Razeghi, Manijeh \|e Verfasser \|4 aut
245	1	0	\|a Technology of quantum devices \|c Manijeh Razeghi
264		1	\|a New York [u.a.] \|b Springer \|c 2010
300			\|a XXV, 560 S. \|b Ill., graph. Darst.
336			\|b txt \|2 rdacontent
337			\|b n \|2 rdamedia
338			\|b nc \|2 rdacarrier
650	0	7	\|a Quantenelektronik \|0 (DE-588)4137298-0 \|2 gnd \|9 rswk-swf
689	0	0	\|a Quantenelektronik \|0 (DE-588)4137298-0 \|D s
689	0		\|5 DE-604
776	0	8	\|i Erscheint auch als \|n Online-Ausgabe \|z 978-1-4419-1056-1
856	4	2	\|m SWB Datenaustausch \|q application/pdf \|u http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=018666904&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA \|3 Inhaltsverzeichnis
999			\|a oai:aleph.bib-bvb.de:BVB01-018666904

Datensatz im Suchindex

_version_	1804140757616951296
adam_text	IMAGE 1 XIII CONTENTS FOREWORD ................................................................................................... V PREFACE ..................................................................................................... VII LIST OF SYMBOLS .................................................................................... XXIII 1. SINGLE CRYSTAL GROWTH ................................................................... 1 1.1. INTRODUCTION ............................................................................ 1 1.2. BULK SINGLE CRYSTAL GROWTH TECHNIQUES ................................... 2 1.2.1. OVERVIEW ......................................................................... 2 1.2.2. CZOCHRALSKI TECHNIQUES ................................................... 3 1.2.3. BRIDGMAN TECHNIQUES ...................................................... 4 1.3. LIQUID PHASE EPITAXY .............................................................. 7 1.3.1. OVERVIEW ......................................................................... 7 1.3.2. MELT EPITAXY .................................................................... 9 1.3.3. LIQUID PHASE ELECTROEPITAXY (LPEE) ............................. 10 1.4. VAPOR PHASE EPITAXY (VPE) .................................................. 11 1.5. METALORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD) ........... 14 1.5.1. INTRODUCTION ................................................................... 14 1.5.2. MOCVD PRECURSORS ...................................................... 16 1.5.3. GROWTH CHAMBER DESIGNS ............................................... 18 1.5.4. IN SITU CHARACTERIZATION .................................................. 20 1.6. MOLECULAR BEAM EPITAXY (MBE)........................................... 27 1.6.1. INTRODUCTION ................................................................... 27 1.6.2. EFFUSION CELLS USED IN MBE SYSTEMS ............................. 28 1.6.3. GAS SOURCE MBE ........................................................... 33 1.6.4. METALORGANIC MBE ........................................................ 35 1.7. SUMMARY .............................................................................. 36 REFERENCES ................................................................................... 38 FURTHER READING ............................................................................ 39 PROBLEMS ..................................................................................... 39 2. SEMICONDUCTOR DEVICE TECHNOLOGY ............................................ 41 2.1. INTRODUCTION .......................................................................... 41 IMAGE 2 XIV TECHNOLOGY OF QUANTUM DEVICES 2.2. OXIDATION .............................................................................. 42 2.2.1. OXIDATION PROCESS .......................................................... 42 2.2.2. MODELING OF OXIDATION ................................................... 44 2.2.3. FACTORS INFLUENCING OXIDATION RATE ................................. 50 2.2.4. OXIDE THICKNESS CHARACTERIZATION .................................. 52 2.3. DIFFUSION OF DOPANTS ............................................................. 56 2.3.1. DIFFUSION PROCESS .......................................................... 57 2.3.2. CONSTANT-SOURCE DIFFUSION: PREDEPOSITION ..................... 62 2.3.3. LIMITED-SOURCE DIFFUSION: DRIVE-IN ................................ 64 2.3.4. JUNCTION FORMATION ........................................................ 65 2.4. ION IMPLANTATION OF DOPANTS ................................................. 68 2.4.1. ION GENERATION ............................................................... 69 2.4.2. PARAMETERS OF ION IMPLANTATION ..................................... 70 2.4.3. ION RANGE DISTRIBUTION .................................................... 71 2.5. CHARACTERIZATION OF DIFFUSED AND IMPLANTED LAYERS ............... 74 2.5.1. SHEET RESISTIVITY ............................................................. 74 2.5.2. JUNCTION DEPTH ............................................................... 76 2.5.3. IMPURITY CONCENTRATION .................................................. 78 2.6. SUMMARY .............................................................................. 79 REFERENCES ................................................................................... 80 FURTHER READING ............................................................................ 80 PROBLEMS ..................................................................................... 80 3. SEMICONDUCTOR DEVICE PROCESSING .............................................. 83 3.1. INTRODUCTION .......................................................................... 84 3.2. PHOTOLITHOGRAPHY .................................................................. 84 3.2.1. WAFER PREPARATION ......................................................... 84 3.2.2. POSITIVE AND NEGATIVE PHOTORESISTS ................................ 85 3.2.3. MASK ALIGNMENT AND FABRICATION .................................... 89 3.2.4. EXPOSURE ....................................................................... 91 3.2.5. DEVELOPMENT ................................................................. 92 3.2.6. DIRECT PATTERNING AND LIFT-OFF TECHNIQUES ....................... 93 3.2.7. ALTERNATIVE LITHOGRAPHIC TECHNIQUES .............................. 95 3.3. ELECTRON-BEAM LITHOGRAPHY ................................................... 98 3.3.1. ELECTRON-BEAM LITHOGRAPHY SYSTEM ................................ 98 3.3.2. ELECTRON-BEAM LITHOGRAPHY PROCESS ............................. 100 3.3.3. PARAMETERS OF ELECTRON-BEAM LITHOGRAPHY ................... 102 3.3.4. MULTILAYER RESIST SYSTEMS ............................................. 104 3.3.5. EXAMPLES OF STRUCTURES ................................................ 106 3.4. ETCHING ............................................................................... 107 3.4.1. WET CHEMICAL ETCHING .................................................. 107 3.4.2. PLASMA ETCHING ............................................................ 110 3.4.3. REACTIVE ION ETCHING .................................................... 114 IMAGE 3 CONTENTS XV 3.4.4. SPUTTER ETCHING ............................................................ 114 3.4.5. ION MILLING ................................................................... 115 3.5. METALLIZATION ...................................................................... 116 3.5.1. METAL INTERCONNECTIONS ................................................ 116 3.5.2. VACUUM EVAPORATION ................................................... 118 3.5.3. SPUTTERING DEPOSITION .................................................. 121 3.6. PACKAGING OF DEVICES .......................................................... 122 3.6.1. DICING .......................................................................... 122 3.6.2. WIRE BONDING .............................................................. 123 3.6.3. PACKAGING .................................................................... 126 3.7. SUMMARY ............................................................................ 128 REFERENCES ................................................................................. 128 FURTHER READING .......................................................................... 128 PROBLEMS ................................................................................... 129 4. SEMICONDUCTOR P-N AND METAL-SEMICONDUCTOR JUNCTIONS .......... 133 4.1. INTRODUCTION ........................................................................ 133 4.2. IDEAL P-N JUNCTION AT EQUILIBRIUM ........................................ 134 4.2.1. IDEAL P-N JUNCTION ........................................................ 134 4.2.2. DEPLETION APPROXIMATION ............................................ 135 4.2.3. BUILT-IN ELECTRIC FIELD ................................................... 140 4.2.4. BUILT-IN POTENTIAL ......................................................... 141 4.2.5. DEPLETION WIDTH ........................................................... 145 4.2.6. ENERGY BAND PROFILE AND FERMI ENERGY ....................... 145 4.3. NON-EQUILIBRIUM PROPERTIES OF P-N JUNCTIONS ...................... 147 4.3.1. FORWARD BIAS: A QUALITATIVE DESCRIPTION ....................... 148 4.3.2. REVERSE BIAS: A QUALITATIVE DESCRIPTION ........................ 151 4.3.3. A QUANTITATIVE DESCRIPTION ........................................... 153 4.3.4. IDEAL P-N JUNCTION DIODE EQUATION ................................ 155 4.3.5. MINORITY AND MAJORITY CARRIER CURRENTS IN NEUTRAL REGIONS ..................................................................... 161 4.4. METAL-SEMICONDUCTOR JUNCTIONS .......................................... 163 4.4.1. FORMALISM ................................................................... 164 4.4.2. SCHOTTKY AND OHMIC CONTACTS....................................... 166 4.5. SUMMARY ............................................................................ 169 FURTHER READING .......................................................................... 170 PROBLEMS ................................................................................... 170 5. TRANSISTORS ................................................................................. 173 5.1. INTRODUCTION ........................................................................ 173 5.2. OVERVIEW OF AMPLIFICATION AND SWITCHING .......................... 174 5.3. BIPOLAR JUNCTION TRANSISTORS ................................................ 176 5.3.1. PRINCIPLES OF OPERATION FOR BIPOLAR JUNCTION TRANSISTORS ................................................................ 177 IMAGE 4 XVI TECHNOLOGY OF QUANTUM DEVICES 5.3.2. AMPLIFICATION PROCESS USING BJTS .............................. 178 5.3.3. ELECTRICAL CHARGE DISTRIBUTION AND TRANSPORT IN BJTS ... 179 5.3.4. CURRENT GAIN ................................................................ 183 5.3.5. TYPICAL BJT CONFIGURATIONS ......................................... 186 5.3.6. DEVIATIONS FROM THE IDEAL BJT CASE ............................ 189 5.4. HETEROJUNCTION BIPOLAR TRANSISTORS ...................................... 190 5.4.1. ALGAAS/GAAS HBT .................................................... 191 5.4.2. GAINP/GAAS HBT ....................................................... 193 5.5. FIELD EFFECT TRANSISTORS ........................................................ 196 5.5.1. JFETS .......................................................................... 196 5.5.2. JFET GATE CONTROL ........................................................ 197 5.5.3. JFET CURRENT-VOLTAGE CHARACTERISTICS ........................... 198 5.5.4. MOSFETS ................................................................... 200 5.5.5. DEVIATIONS FROM THE IDEAL MOSFET CASE ................... 202 5.6. APPLICATION SPECIFIC TRANSISTORS .......................................... 203 5.7. SUMMARY ............................................................................ 204 REFERENCES ................................................................................. 204 PROBLEMS ................................................................................... 205 6. SEMICONDUCTOR LASERS ............................................................... 209 6.1. INTRODUCTION ........................................................................ 209 6.2. TYPES OF LASERS ................................................................... 210 6.3. GENERAL LASER THEORY ........................................................... 211 6.3.1. STIMULATED EMISSION .................................................... 212 6.3.2. RESONANT CAVITY ........................................................... 215 6.3.3. WAVEGUIDES ................................................................. 216 6.3.4. LASER PROPAGATION AND BEAM DIVERGENCE ..................... 225 6.3.5. WAVEGUIDE DESIGN CONSIDERATIONS ............................... 228 6.4. RUBY LASER .......................................................................... 228 6.5. SEMICONDUCTOR LASERS ......................................................... 232 6.5.1. POPULATION INVERSION ................................................... 233 6.5.2. THRESHOLD CONDITION AND OUTPUT POWER ....................... 234 6.5.3. LINEWIDTH OF SEMICONDUCTOR LASER DIODES ................... 238 6.5.4. HOMOJUNCTION LASERS ................................................... 239 6.5.5. HETEROJUNCTION LASERS .................................................. 239 6.5.6. DEVICE FABRICATION ....................................................... 241 6.5.7. SEPARATE CONFINEMENT AND QUANTUM WELL LASERS .......... 246 6.5.8. LASER PACKAGING .......................................................... 249 6.5.9. DISTRIBUTED FEEDBACK LASERS ......................................... 249 6.5.10. MATERIAL CHOICES FOR COMMON INTERBAND LASERS ......... 251 6.5.11. INTERBAND LASERS ......................................................... 252 6.5.12. QUANTUM CASCADE LASERS ............................................ 255 6.5.13. TYPE II LASERS ............................................................. 257 IMAGE 5 CONTENTS XVII 6.5.14. VERTICAL CAVITY SURFACE EMITTING LASERS ...................... 260 6.5.15. LOW-DIMENSIONAL LASERS ............................................ 262 6.5.16. RAMAN LASERS ............................................................. 264 6.6. SUMMARY ............................................................................ 265 REFERENCES ................................................................................. 266 FURTHER READING .......................................................................... 268 PROBLEMS ................................................................................... 269 7. QUANTUM CASCADE LASERS .......................................................... 271 7.1. INTRODUCTION ........................................................................ 272 7.2. BASIC OPERATION PRINCIPLES .................................................. 273 7.2.1. INTERSUBBAND TRANSITIONS .............................................. 274 7.2.2. CASCADING .................................................................... 275 7.2.3. RATE EQUATION .............................................................. 276 7.2.4. POLAR OPTICAL PHONON RESONANCE .................................. 283 7.3. THE COMPONENTS OF A QUANTUM CASCADE LASER ..................... 285 7.3.1. CORE HETEROSTRUCTURE .................................................... 285 7.3.2. LASER WAVEGUIDE ......................................................... 288 7.4. MAKING A QUANTUM CASCADE LASER ........................................ 289 7.4.1. EPITAXIAL GROWTH AND MATERIAL CHARACTERIZATION........... 289 7.4.2. PROCESSING AND PACKAGING ........................................... 290 7.5. DEVICE PERFORMANCE ........................................................... 292 7.5.1. POWER-CURRENT-VOLTAGE CHARACTERISTICS ......................... 292 7.5.2. TEMPERATURE DEPENDENT CHARACTERISTICS ....................... 294 7.5.3. WALL PLUG EFFICIENCY .................................................... 296 7.5.4. SPECTRA AND FAR FIELD .................................................... 299 7.6. WALL PLUG EFFICIENCY OPTIMIZATION ...................................... 300 7.6.1. ELECTRICAL CONTACT RESISTANCE ........................................ 300 7.6.2. WAVEGUIDE GEOMETRY .................................................. 301 7.6.3. BONDING METHOD .......................................................... 304 7.7. POWER SCALING ..................................................................... 306 7.8. PHOTONIC CRYSTAL DISTRIBUTED FEEDBACK QUANTUM CASCADE LASERS ................................................................................ 308 7.8.1. PATTERN DESIGN .............................................................. 309 7.8.2. COUPLING COEFFICIENTS .................................................. 311 7.8.3. TESTING RESULTS ............................................................. 312 7.9. QUANTUM CASCADE LASERS AT DIFFERENT WAVELENGTHS .............. 314 7.9.1. SHORT WAVELENGTH QUANTUM CASCADE LASERS ( 4 * M) .... 314 7.9.2. MID WAVELENGTH QUANTUM CASCADE LASERS (4-9 * M) .... 315 7.9.3. LONG WAVELENGTH QUANTUM CASCADE LASERS ( 9 * M) .... 315 7.10. SUMMARY .......................................................................... 316 REFERENCES ................................................................................. 316 FURTHER READING .......................................................................... 317 IMAGE 6 XVIII TECHNOLOGY OF QUANTUM DEVICES PROBLEMS ................................................................................... 318 8. PHOTODETECTORS: GENERAL CONCEPTS ............................................ 321 8.1. INTRODUCTION ........................................................................ 321 8.2. ELECTROMAGNETIC RADIATION .................................................. 323 8.3. PHOTODETECTOR PARAMETERS ................................................... 325 8.3.1. RESPONSIVITY ................................................................ 326 8.3.2. NOISE IN PHOTODETECTORS ............................................... 326 8.3.3. NOISE MECHANISMS ...................................................... 329 8.3.4. DETECTIVITY ................................................................... 332 8.3.5. DETECTIVITY LIMITS AND BLIP ........................................ 333 8.3.6. FREQUENCY RESPONSE ..................................................... 335 8.4. THERMAL DETECTORS ............................................................... 335 8.5. SUMMARY ............................................................................ 339 REFERENCES ................................................................................. 339 FURTHER READING .......................................................................... 339 PROBLEMS ................................................................................... 339 9. PHOTON DETECTORS ....................................................................... 343 9.1. INTRODUCTION ........................................................................ 343 9.2. TYPES OF PHOTON DETECTORS .................................................. 345 9.2.1. PHOTOCONDUCTIVE DETECTORS .......................................... 345 9.2.2. PHOTOVOLTAIC DETECTORS ................................................. 348 9.3. EXAMPLES OF PHOTON DETECTORS ............................................ 351 9.3.1. P-I-N PHOTODIODES ........................................................ 351 9.3.2. AVALANCHE PHOTODIODES ............................................... 353 9.3.3. SCHOTTKY BARRIER PHOTODIODES ...................................... 355 9.3.4. METAL-SEMICONDUCTOR-METAL PHOTODIODES .................... 357 9.3.5. TYPE II SUPERLATTICE PHOTODETECTORS ............................. 357 9.3.6. PHOTOELECTROMAGNETIC DETECTORS .................................. 360 9.3.7. QUANTUM WELL INTERSUBBAND PHOTODETECTORS ................ 361 9.3.8. QUANTUM DOT INFRARED PHOTODETECTORS ......................... 362 9.4. FOCAL PLANE ARRAYS ............................................................. 363 9.5. SUMMARY ............................................................................ 364 REFERENCES ................................................................................. 364 FURTHER READING .......................................................................... 365 PROBLEMS ................................................................................... 365 10. TYPE-II INAS/GASB SUPERLATTICE PHOTON DETECTORS ................... 367 10.1. INTRODUCTION ...................................................................... 367 10.2. MATERIAL SYSTEM AND VARIANTS OF TYPE II SUPERLATTICES ...... 368 10.2.1. THE 6.1 ANGSTROM FAMILY ........................................... 368 10.2.2. TYPE II INAS/GASB SUPERLATTICE ................................. 370 IMAGE 7 CONTENTS XIX 10.2.3. VARIANTS OF SB-BASED SUPERLATTICES ............................ 370 10.3. HISTORIC DEVELOPMENT OF TYPE II SUPERLATTICE PHOTODETECTORS ................................................................. 374 10.4. PHYSICS OF TYPE II INAS/GASB SUPERLATTICES .................... 376 10.4.1. QUALITATIVE DESCRIPTION .............................................. 376 10.4.2. QUANTITATIVE CALCULATIONS OF ELECTRONIC BANDSTRUCTURE ........................................................... 378 10.5. ADVANTAGES OF TYPE II SUPERLATTICE .................................. 381 10.5.1. BAND GAP ENGINEERING ............................................... 381 10.5.2. AUGER SUPPRESSION ..................................................... 382 10.5.3. LARGE EFFECTIVE MASS ................................................. 382 10.5.4. NORMAL INCIDENT, BROAD BAND ABSORPTION ................... 383 10.5.5. GOOD UNIFORMITY ........................................................ 384 10.6. MATERIAL GROWTH AND CHARACTERIZATION ............................... 385 10.7. DEVICE FABRICATION ............................................................ 387 10.7.1. SINGLE ELEMENT DEVICE FOR TESTING .............................. 387 10.7.2. FOCAL PLANE ARRAY FABRICATION..................................... 388 10.8. SUMMARY .......................................................................... 390 REFERENCES ................................................................................. 390 FURTHER READING .......................................................................... 392 PROBLEMS ................................................................................... 392 11. QUANTUM DOT INFRARED PHOTODETECTORS ...................................... 395 11.1. INTRODUCTION ...................................................................... 396 11.1.1. OPERATING PRINCIPLES OF QWIPS AND QDIPS .............. 396 11.1.2. PHOTOCURRENT .............................................................. 397 11.1.3. DARK CURRENT .............................................................. 399 11.1.4. NOISE ......................................................................... 399 11.2. ADVANTAGES OF QDIPS ....................................................... 400 11.2.1. INTRODUCTION ............................................................... 400 11.2.2. HIGH GAIN AND THE PHONON BOTTLENECK ....................... 400 11.2.3. LOW DARK CURRENT ....................................................... 401 11.2.4. NORMAL INCIDENCE ABSORPTION .................................... 402 11.2.5. VERSATILITY .................................................................. 403 11.2.6. SUMMARY ................................................................... 403 11.3. QUANTUM DOT FABRICATION FOR QDIPS ................................. 404 11.3.1. INTRODUCTION ............................................................... 404 11.3.2. THE FORMATION OF QUANTUM DOTS IN THE STRANSKIKRASTANOV GROWTH MODE .......................................... 405 11.3.3. PROPERTIES OF STRANSKI-KRASTANOV GROWN DOTS AND THEIR EFFECT ON QDIP PERFORMANCE ........................... 406 11.3.4. QUANTUM DOT SIZE ...................................................... 407 11.3.5. QUANTUM DOT SHAPE ................................................... 408 11.3.6. QUANTUM DOT DENSITY ................................................. 409 IMAGE 8 XX TECHNOLOGY OF QUANTUM DEVICES 11.3.7. QUANTUM DOT UNIFORMITY ........................................... 410 11.3.8. CONCLUSION AND FUTURE DIRECTIONS FOR DOT FABRICATION ............................................................... 412 11.4. REVIEW OF ACTUAL QDIP PERFORMANCE ............................... 412 11.4.1. INTRODUCTION ............................................................... 412 11.4.2. HIGH OPERATING TEMPERATURE ...................................... 412 11.4.3. FPA IMAGING ............................................................. 416 11.4.4. SUMMARY ................................................................... 420 11.5. SUMMARY .......................................................................... 420 REFERENCES ................................................................................. 421 FURTHER READING .......................................................................... 422 PROBLEMS ................................................................................... 422 12. SINGLE-PHOTON AVALANCHE PHOTODIODES ..................................... 425 12.1. INTRODUCTION ...................................................................... 425 12.2. AVALANCHE PHOTODETECTORS, LINEAR MODE ........................... 427 12.2.1. DEVICE FABRICATION. .................................................... 427 12.2.2. LINEAR-MODE OPERATION. ............................................. 429 12.2.3. EXCESS NOISE. ............................................................. 433 12.3. EXAMPLES OF APD STRUCTURES ............................................ 434 12.3.1. REACH-THROUGH AVALANCHE PHOTODIODES. .................... 435 12.3.2. SEPARATE ABSORPTION CHARGE MULTIPLICATION (SACM) APD ......................................................................... 436 12.4. GEIGER MODE OPERATION ..................................................... 436 12.4.1. BASIC THEORY. ............................................................. 436 12.4.2. PASSIVE AVALANCHE QUENCHING .................................... 440 12.4.3. ACTIVE AVALANCHE QUENCHING ..................................... 441 12.4.4. GATED DETECTION ......................................................... 442 12.4.5. DEVICE LIMITATIONS ..................................................... 445 12.4.6. AFTER-PULSING ............................................................. 446 12.5. EXAMPLES OF SINGLE-PHOTON AVALANCHE PHOTODIODES ......... 447 12.5.1. SILICON SINGLE-PHOTON AVALANCHE DIODES .................... 447 12.5.2. INGAAS/INP SINGLE-PHOTON AVALANCHE DIODES ............ 449 12.5.3. GAN SINGLE-PHOTON AVALANCHE DIODES ........................ 450 12.6. SUMMARY .......................................................................... 452 REFERENCES ................................................................................. 453 FURTHER READING .......................................................................... 454 PROBLEMS ................................................................................... 454 13. TERAHERTZ DEVICE TECHNOLOGY ................................................... 457 13.1. INTRODUCTION ...................................................................... 457 13.2. APPLICATIONS ..................................................................... 458 13.2.1. THZ SPECTROSCOPY ...................................................... 458 IMAGE 9 CONTENTS XXI 13.2.2. T-RAY IMAGING ............................................................ 460 13.2.3. THZ RESEARCH TOOL ...................................................... 462 13.3. BROADBAND TERAHERTZ SOURCES ............................................ 464 13.4. NARROW BAND TERAHERTZ SOURCES ......................................... 466 13.4.1. OPTICAL CONVERTER ....................................................... 466 13.4.2. OPTICALLY PUMPED GAS LASERS ..................................... 469 13.4.3. SEMICONDUCTOR SOURCE BASED ON SILICON AND GERMANIUM .............................................................. 469 13.5. QUANTUM CASCADE TERAHERTZ SOURCES ................................. 472 13.5.1. GAAS BASED TERAHERTZ QCLS ...................................... 472 13.5.2. INP BASED TERAHERTZ QCLS ......................................... 473 13.6. MAGNETIC FIELD EFFECTS ....................................................... 474 13.7. DIFFERENCE FREQUENCY GENERATION ...................................... 480 13.8. GAN QCLS FOR HIGH TEMPERATURE OPERATION ...................... 481 13.9. SUMMARY .......................................................................... 487 REFERENCES ................................................................................. 488 FURTHER READING .......................................................................... 493 PROBLEMS ................................................................................... 493 APPENDICES ............................................................................................ 497 A.1. PHYSICAL CONSTANTS ............................................................ 499 A.2. INTERNATIONAL SYSTEM OF UNITS (SI UNITS) ........................... 501 A.3. PHYSICAL PROPERTIES OF ELEMENTS IN THE PERIODIC TABLE ...... 503 A.4. PHYSICAL PROPERTIES OF IMPORTANT SEMICONDUCTORS ............ 517 A.5. THERMIONIC EMISSION ....................................................... 521 A.6. MINORITY CARRIER LIFETIME MEASUREMENT ............................ 525 A.7. ADVANCED TOPICS IN TYPE-II PHOTODETECTORS .................... 533 A.8. PHYSICAL PROPERTIES AND SAFETY INFORMATION OF METALORGANICS................................................................... 543
any_adam_object	1
author	Razeghi, Manijeh
author_facet	Razeghi, Manijeh
author_role	aut
author_sort	Razeghi, Manijeh
author_variant	m r mr
building	Verbundindex
bvnumber	BV035807928
classification_rvk	UH 5600
ctrlnum	(OCoLC)634791914 (DE-599)DNB994589530
discipline	Maschinenbau / Maschinenwesen Physik
format	Book
fullrecord	<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01486nam a2200397 c 4500</leader><controlfield tag="001">BV035807928</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">20101215 </controlfield><controlfield tag="007">t</controlfield><controlfield tag="008">091104s2010 gw ad\|\| \|\|\|\| 00\|\|\| eng d</controlfield><datafield tag="015" ind1=" " ind2=" "><subfield code="a">09,N26,0902</subfield><subfield code="2">dnb</subfield></datafield><datafield tag="016" ind1="7" ind2=" "><subfield code="a">994589530</subfield><subfield code="2">DE-101</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9781441910554</subfield><subfield code="c">GB. : ca. EUR 138.03 (freier Pr.), ca. sfr 165.00 (freier Pr.)</subfield><subfield code="9">978-1-4419-1055-4</subfield></datafield><datafield tag="024" ind1="3" ind2=" "><subfield code="a">9781441910554</subfield></datafield><datafield tag="028" ind1="5" ind2="2"><subfield code="a">12564897</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)634791914</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)DNB994589530</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">rakddb</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="044" ind1=" " ind2=" "><subfield code="a">gw</subfield><subfield code="c">XA-DE-BE</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-703</subfield><subfield code="a">DE-11</subfield><subfield code="a">DE-83</subfield><subfield code="a">DE-20</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">UH 5600</subfield><subfield code="0">(DE-625)145666:</subfield><subfield code="2">rvk</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">620</subfield><subfield code="2">sdnb</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Razeghi, Manijeh</subfield><subfield code="e">Verfasser</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Technology of quantum devices</subfield><subfield code="c">Manijeh Razeghi</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">New York [u.a.]</subfield><subfield code="b">Springer</subfield><subfield code="c">2010</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">XXV, 560 S.</subfield><subfield code="b">Ill., graph. Darst.</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Quantenelektronik</subfield><subfield code="0">(DE-588)4137298-0</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">Quantenelektronik</subfield><subfield code="0">(DE-588)4137298-0</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="776" ind1="0" ind2="8"><subfield code="i">Erscheint auch als</subfield><subfield code="n">Online-Ausgabe</subfield><subfield code="z">978-1-4419-1056-1</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="m">SWB Datenaustausch</subfield><subfield code="q">application/pdf</subfield><subfield code="u">http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=018666904&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA</subfield><subfield code="3">Inhaltsverzeichnis</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-018666904</subfield></datafield></record></collection>
id	DE-604.BV035807928
illustrated	Illustrated
indexdate	2024-07-09T22:05:03Z
institution	BVB
isbn	9781441910554
language	English
oai_aleph_id	oai:aleph.bib-bvb.de:BVB01-018666904
oclc_num	634791914
open_access_boolean
owner	DE-703 DE-11 DE-83 DE-20
owner_facet	DE-703 DE-11 DE-83 DE-20
physical	XXV, 560 S. Ill., graph. Darst.
publishDate	2010
publishDateSearch	2010
publishDateSort	2010
publisher	Springer
record_format	marc
spelling	Razeghi, Manijeh Verfasser aut Technology of quantum devices Manijeh Razeghi New York [u.a.] Springer 2010 XXV, 560 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Quantenelektronik (DE-588)4137298-0 gnd rswk-swf Quantenelektronik (DE-588)4137298-0 s DE-604 Erscheint auch als Online-Ausgabe 978-1-4419-1056-1 SWB Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=018666904&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis
spellingShingle	Razeghi, Manijeh Technology of quantum devices Quantenelektronik (DE-588)4137298-0 gnd
subject_GND	(DE-588)4137298-0
title	Technology of quantum devices
title_auth	Technology of quantum devices
title_exact_search	Technology of quantum devices
title_full	Technology of quantum devices Manijeh Razeghi
title_fullStr	Technology of quantum devices Manijeh Razeghi
title_full_unstemmed	Technology of quantum devices Manijeh Razeghi
title_short	Technology of quantum devices
title_sort	technology of quantum devices
topic	Quantenelektronik (DE-588)4137298-0 gnd
topic_facet	Quantenelektronik
url	http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=018666904&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA
work_keys_str_mv	AT razeghimanijeh technologyofquantumdevices

Verfügbarkeit

Es ist kein Print-Exemplar vorhanden.

Fernleihe Bestellen Achtung: Nicht im THWS-Bestand! Inhaltsverzeichnis

MARC

Datensatz im Suchindex

Es ist kein Print-Exemplar vorhanden.

Ähnliche Einträge