Extended abstracts of the 2003 International Conference on Solid State Devices and Materials: September 16 - 18, 2003, Tokyo, Keio Plaza Inter-Continental Tokyo
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| Format: | Tagungsbericht Buch |
| Sprache: | English |
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Tokyo
Publication Office, Inter Group Corp.
2003
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| Online-Zugang: | Inhaltsverzeichnis Inhaltsverzeichnis |
| Beschreibung: | Literaturangaben |
| Beschreibung: | XLVII, 950 S. Ill., graph. Darst. |
| ISBN: | 4901070088 |
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| adam_text | EXTENDED ABSTRACTS OF THE 2003 INTERNATIONAL CONFERENCE ON SOLID STATE
DEVICES AND MATERIALS SEPTEMBER 16-18,2003 TOKYO KEIO PLAZA
INTER-CONTINENTAL TOKYO SPONSORED BY THE JAPAN SOCIETY OFAPPLIED PHYSICS
TECHNICAL-COSPONSORED BY IEEE ELECTRON DEVICES SOCIETY IN COOPERATION
WITH THE INSTITUTE OF ELECTRONICS, INFORMATION AND COMMUNICATION
ENGINEERS IEEE EDS JAPAN CHAPTER IEEEJAPAN COUNCIL THE INSTITUTE OF
ELECTRICAL ENGINEERS OF JAPAN THE ELECTROCHEMICAL SOCIETY OF JAPAN THE
INSTITUTE OF IMAGE INFORMATION AND TELEVISION ENGINEERS SUPPORTED BY THE
COMMEMORATIVEASSOCIATION FOR THE JAPAN WORLD EXPOSITION (1970) CONTENTS
^ESDAIFT SEPTEIRIBER16 EMINENCEHALL PL: OPENING SESSION (9:30 - 12:00)
9:30 PL-0 WELCOME ADDRESS AND AWARD PRESENTATION M. NAKAMURA, HITACHI
LTD., JAPAN 9:45 PL-1 RESEARCH AND DEVELOPMENT STRATEGY FOR CREATION
OFCORPORATE VALUE (PLENARY) T. IKOMA,HITOTSUBASHI UNIV., JAPAN 10:30
PL-2 ROLE AND STRATEGY OFIMEC AS A EUROPEAN PLAYER IN A GLOBALIZED
RESEARCH ERA (PLENARY) G. DECLERCK, IMEC, BELGIUM 2 11:15 PL-3 PROSPECTS
OF NANOSTRUCTURE DEVICES FOR UBIQUITOUS INFORMATION NETWORK (PLENARY) Y.
ARAKAWA, UNIV. OFTOKYO, JAPAN 4 ROOM A A-L: ADVANCED SILICON DEVICES AND
DEVICE PHYSICS - GATE STACK TECHNOLOGIES - (14:00 - 15:50) 14:00 A-L-1
DUAL WORKFUNCTION METAL-GATE FINFET DEVICES FABRICATED USING TOTAL GATE
SILICIDATION (INVITED) J. KEDZIERSKI, E. NOWAK, M. IEONG, T. KANARSKY
AND D. BOYD, IBM, USA 6 14:30 A-1-2 INFLUENCES OFGATE-POLY IMPURITY
CONCENTRATION ON INVERSION-LAYERMOBILITY IN MOSFETS WITH ULTRATHIN GATE
OXIDE FILM J. KOGA, T. ISHIHARA AND S. TAKAGI, TOSHIBA CORP., JAPAN 8
14:50 A-L-3 NEW SELF-ALIGNED METAL-GATE MOSFETS USING ALUMINUM
SUBSTITUTION TECHNOLOGY S. NAKAMURA, H. SHIDO, T. KURAHASHI, S. KISHII,
T. NAGATA, B. KUMASAKA, T. USUKI, S. SATO AND Y. MISHIMA, FUJITSU LABS
LTD.,JAPAN 10 15:10 A-L-4 SCREENING EFFECT ON REMOTE COULOMB SCATTERING
DUE TO IMPURITIES IN POLYSILICON GATE OFMOSFET T. ISHIHARA, J. KOGA, S.
TAKAGI AND K. MATSUZAWA, TOSHIBA CORP., JAPAN 12 15:30 A-1-5 DIRECT
EVALUATION OF AN INTERFACIAL LAYER IN HIGH-/: GATE DIELECTRICS BY 1/F
NOISE MEASUREMENTS T. ISHIKAWA, S. TSUJIKAWA, S. SAITO, D. HISAMOTO AND
S. KIMURA, HITACHI, LTD., JAPAN 14 A-2: ADVANCED SILICON DEVICES AND
DEVICE PHYSICS - ADVANCED CMOS TECHNOLOGY I - (16:15 - 18:15) 16:15
A-2-1 ENHANCEMENT OF VT|1 DEGRADATION UNDERNBT STRESS DUE TO HOLE
CAPTURING Y. MITANI1, M. NAGAMINE1, H. SATAKE AND A. TORIUMI2, TOSHIBA
CORP. AND2THE UNIV. OFTOKYO, JAPAN 16 16:35 A-2-2 NEW MECHANISM FOR
NEGATIVE-BIAS-TEMPERATURE INSTABILITY AND ITS IMPACT ON SCALING OF
PMOSFETS D.-Y. LEE1, H.-C. LIN2, C.-C. CHEN1, C.-H. CHIEN2, T.-Y.
HUANG1, T. WANG1, T.-L. LEE3, S.-C. CHEN1 AND M.-S. LIANG1, NATIONAL
CHIAO-TUNG UNIV., 2NALIONAL NANA DEVICE LABS AND TAIWAN
SEMICONDUCTORMANUFACTURING COMPANY, TAIWAN 18 16:55 A-2-3 ORIGIN OF
ENHANCED THERMAL NOISE FOR 1 OONM-MOSFETS S. HOSOKAWA1, Y. SHIRAGA1, H.
UENO , M. MIURA-MATTAUSCH , H.J. MATTAUSCH1, T. OHGURO2, S. KUMASHIRO2,
M. TAGUCHI2, H. MASUDA2 AND S. MIYAMOTO2, HIROSHIMA UNIV. AND 2STARC,
JAPAN 20 17:15 A-2-4 COMPARISON OF THE INTERCONNECT CAPACITANCES FOR
VARIOUS SRAM CELL LAYOUTS TOACHIEVE HIGH SPEED, LOW POWERSRAM CELLS Y
TSUKAMOTO1, K. NII1, Y. YAMAGAMI2, T. YOSHIZAWA1, S. IMAOKA-1, T.
SUZUKI2, A. SHIBAYAMA2 AND H. MAKINO1, RENESAS TECHNOLOGY CORP.,
2MATSUSHITA ELECTRIC INDUSTRIAL CORP. AND RENESAS DEVICEDESIGN CORP.,
JAPAN 22 XVI 17 35 A-2-5 17 55 A-2-6 ELIMINATING THIESHOLD VOLTAGE
OFFSET OF PMOSFETS IN HIGH-DENSITYDRAM N TAKAURA .R TAKEMURA .H
MATSUOKA .R NAGAI2,S YAMADA2,H ASAKUIA ANDS KIMURA1, HITACHI, LTD AND
2ELPIDAMEMOIY, INC , JAPAN 24 GATE ENGINEERING TO PREVENTNMOS DOPANT
CHANNELING FOI NANO-SCALE CMOSFETTECHNOLOGY SH PARK .HD LEE2,JS KIM ,SH
BAEK .H CHANG1, JH LEE ,KC KIM ,BS SONG .HK BAE .MO KIM .HS LEE .YS
KANG1 AND D B KIM , //YM SEMICONDUITOI INC AND 2CHUNGNAM NATIONAL UMV,
KOIEA 26 ROOM B B-L: NON-VOLATILEMEMORY TECHNOLOGIES - NON-VOLATILE
MEMORY I - (14 00 - 16 00) 14 00 B-L-1 CURRENTFERAMTECHNOLOGY
DEVELOPMENTS AND SCALING TOWARDS 3-D CAPACITOR CELLS (INVITED) DJ
WOUTERS, IMEC, BELGIUM 28 14 30 B-L-2 32MB CHAIN FERAM-AN OVERVIEW
(INVITED) D TAKASHIMA1 ANDT ROHR2, TOSHIBA COIP AND 2INFINEON
TECHNOLOGIESJAPANKK JAPAN 30 15 00 B-L-3 APROPOSAL OFNEW FERROELECTRIC
GATE FIELD EFFECT TRANSISTOR MEMORY BASEDON FEIROELECTRIC- INSULATOR
INTERFACE CONDUCTION G HIROOKA,M NODA AND M OKUYAMA, OSAKA UMV, JAPAN 32
15 20 B-L-4 LONG-TERM STABILIZATION OF SENSE SIGNALS IN A
NON-DESTRUCTIVE READOUT FERAM BY INTENTIONAL MODIFICATION OF THE
POLARIZATION HYSTERESIS CURVE FORLOW VOLTAGE APPLICATIONS T YAMADA,Y
KATO, S KOYAMA AND Y SHIMADA, MATSUSHITA ELECTIJC INDUSTI NIL CO , LTD,
JAPAN 34 15 40 B-L-5 ALOW DIELECTRIC CONSTANT SR,(TA,^NB^^THIN FILM
CONTROLLING THE CRYSTAL ORIENTATIONON II02 SUBSTRATE FOR
ONETRANSISTORTYPE FERROELECTRIC MEMORY DEVICE I TAKAHASHI ,H SAKURAI ,A
YAMADA1,T GOTO ,M HIRAYAMA ,A TERAMOTO ,S SUGAWA1 AND T OHMI1, NICHE,
TOHOKU UMV AND ^TOHOKU UMV, LAPAN 36 B-2: NON-VOLATILE MEMORY
TECHNOLOGIES - NON-VOLATILE MEMORY II - (16 15 - 17 35) 16 15 B-2-1
NOVEL CAPACITOR STRUCTURE USING SIDEWALL SPACER FOR HIGHLY RELIABLE FRAM
DEVICE HH KIM, JH PARK,Y J SONG,NW JANG, H J JOO, S K KANG, S H JOO, S Y
LEE ANDK KIM, SAMS U/IG ELECTIONIC S CO LTD, KOIEA 38 16 35 B-2-2 HIGH
PERFORMANCE PZT CAPACITOR USING HIGHLY CRYSTALLINE SRO BOTTOM ELECTRODE
FOR MBIT FERAM DEVICES H ITOKAWA ,K NATON ,S YAMAZAKI ,G BEITEL2ANDK
YAMAKAWA1, TOSHIBA COIP AND ^INFINEON TECHNOLOGIES JAPAN, JAPAN 40 16
55 B-2-3 ANOVEL CHEMICAL SOLUTION DEPOSITION METHOD SUITABLE
FORHIGH-YIELD FABRICATION OF50 NM- THICK SRBI-,TA20,, CAPACITORS Y
KAWASHIMA ANDH ISHIWARA, TOKYO INST OFTECHNOLOGY, JAPAN 42 17 15 B-2-4
TWO-MODE BEHAVIOR IN TIME AND TEMPERATURE DEPENDENCE OFIMPRINT-INDUCED
CHARGELOSS IN INTEGRATED SRBI2(TA,NB)209 CAPACITORS A NOMA, T MIKAWA, Y
NAGANO, Y JUDAI ANDE FUJN, MATSUSHITA ELECTNC INDUSTIIAL CO , LTD, LAPAN
44 ROOMC C-L: SILICONPROCESS/MATERIALS TECHNOLOGIES - HIGH-K GATE
DIELECTRIC I - (14 00 - 15 50) 14 00 C-L-1 MOBILITY IN HIGH-K DIELECTRIC
BASED FIELD EFFECTTRANSISTORS (INVITED) L-A RAGNARSSON ,W TSAF,A
KERBER3, PJ CHEN4, E CARTIER1, L PANTISANO , S DEGENDT AND M HEYNS ,
IMEC, BELGIUM, HNTEL COIP , INFINEON, *TEXAS INSTI UMENTS AND 7BM,
USA 46 14 30 C-L-2 EFFECT OF THE FILM COMPOSITION OFHFAION GATE
DIELECTRIC ON THE STRUCTURAL TRANSFORMATION AND THE ELECTRICAL
PROPERTIES THROUGH HIGH-TEMPERATUREANNEALING M KOYAMA, Y KAMIMUTA,M
KOIKE,M SUZUKI ANDA NISHIYAMA, TOSHIBA COIP .JAPAN 48 XVN 14:50 C-L-3
PROJECTION OF MOBILITY DEGRADATION IN HFAIO/SI02NMOSFET TOWARDS THE
REDUCTION OF INTERFACIAL OXIDE THICKNESS N. YASUDA1, H. HISAMATSU1, H.
OTA2, K. IWAMOTO1, K. TOMINAGA1, K. YAMAMOTO1, W. MIZUBAYASHI2, N.
YAMAGISHI1, M. OHNO1, S. MIGITA2, Y. MORITA2,T. HORIKAWA2, T. NABATAME1
ANDA. TORIUMI2-3, MIRAI-ASET, AIST, 2MIRAI-ASRC, AISTAND- THE UNIV.
OFTOKYO, JAPAN ... 50 15:10 C-L-4 ULTRA-THIN(EOT L.ONM) AMORPHOUS
HFSION GATE INSULATOR WITH HIGH HFCONCENTRATION FOR
HIGH-PERFORMANCELOGICAPPLICATIONS M. KOIKE, T. INO, M. KOYAMA, Y
KAMATA,Y KAMIMUTA, M. SUZUKI,A. TAKASHIMA, Y. MITANI, A. NISHIYAMAAND Y.
TSUNASHIMA, TOSHIBA CORP., JAPAN 52 15:30 C-L-5 HAFNIUM CONTENT
DEPENDENCE OF BOTTOM INTERFACIAL LAYER AND ITS IMPACT ON HFXAL, XO
HIGH-K NMOSCAPS AND NMOSFETS CHARACTERISTICS Y TAMURA,Y SUGIYAMA, M.
YAMAGUCHI, H. MINAKATA, Y. TANIDA, T. SAKODA, M. NAKAMURA AND Y. NARA,
FUJITSU LABS LTD.,JAPAN 54 C-2: SILICON PROCESS/MATERIALS TECHNOLOGIES -
HIGH-K GATE DIELECTRIC II - (16:15 - 17:55) 16:15 C-2-1 FLATBAND VOLTAGE
SHIFT CAUSED BY DOPANTS DIFFUSED FROM POLY-SI GATE ELECTRODE IN
POLY-SI/HFSIO/ SI02/SI A. KANEKO, S. INUMIYA, K. SEKINE, M. SATO,Y
KAMIMUTA, K. EGUCHI AND Y. TSUNASHIMA, TOSHIBA CORP., JAPAN .. 56 16:35
C-2-2 CONTROLLED NITROGEN INCORPORATION INTO HFAIOX BY LAYER-BY-LAYER
DEPOSITION AND ANNEALING (LL- D&A) PROCESS AND ITS IMPACT ON ELECTRICAL
PROPERTIES OFMOSCAPS AND NMOSFETS K. TOMINAGA1, K. IWAMOTO1, H.
HISAMATSU1, T. YASUDA2, H. OTA2, N. YASUDA1, T. NABATAME1 AND A.
TORIUMI2-3, MIRAI-ASET, AIST, 2MIRAI-ASRC, AISTAND THE UNIV. OFTOKYO,
JAPAN 58 16:55 C-2-3 SUPPRESSION OF SILICIDATION IN POLY-SI/ZR02/SI02/SI
STRUCTURE BY HELIUM THROUGH PROCESS K. MURAOKA, TOSHIBA CORP., JAPAN 60
17:15 C-2-4 RELIABILITY CHARACTERISTICS OF AN HF02/SIO, STACK GATE
DIELECTRIC ANNEALED IN A DEUTERIUM AMBIENT H. PARK, H. YANG, H. SIM AND
H. HWANG, KWANGJU INST, OFSCIENCE AND TECHNOLOGY, KOREA 62 17:35 C-2-5
ENHANCEMENT OF DIELECTRIC CONSTANT DUE TO EXPANSION OFLATTICE SPACING IN
CE02 DIRECTLY GROWN ONSI(LLL) D. MATSUSHITA1, Y. NISHIKAWA1, N. SATOU2,
M. YOSHIKI2, T. SCHIMIZU1, T. YAMAGUCHI1, H. SATAKE AND N. FUKUSHIMA1,
TOSHIBA CORP. AND2TOSHIBA NANOANALYSIS CORP., JAPAN 64 ROOMD D-L: NEW
MATERIALS AND CHARACTERIZATION - OXIDE RELIABILITY AND SURFACE
CHARACTERIZATION - (14:00 - 16:00) 14:00 D-L-1 THE EFFECT OF BORON AND
FLUORINE INCORPORATION IN SION GATE INSULATOR ON NBTI T. SASAKI, F.
OOTSUKA, H. OZAKI, M. TOMIKAWA, M. YASUHIRA AND T. ARIKADO, SELETE,
JAPAN 66 14:20 D-L-2 NEW INSIGHTS INTO DYNAMIC NEGATIVE BIAS TEMPERATURE
INSTABILITY OF PMOSFETS S.S. TAN1, T.P. CHEN1, C.H. ANG2, W.Y. TEO2 AND
L. CHAN2, NANYANG TECHNOLOGICAL UNIV. AND -CHARTEREDSEMICONDUCTOR MANU.
LTD., SINGAPORE 68 14:40 D-L-3 NEIGHBORING EFFECT IN NITROGEN-ENHANCED
NEGATIVE BIAS TEMPERATURE INSTABILITY S.S. TAN1, T.P. CHEN1, J.M. SOON2,
K.P. LOH2, C.H. ANG3, W.Y. TEO3 AND L. CHAN3, NANYANG TECHNOLOGICAL
UNIV., 2NATIONAL UNIV. OFSINGAPORE AND CHARTEREDSEMICONDUCTOR MANU.
LTD., SINGAPORE 70 15:00 D-L-4 CONDUCTIVE ATOMIC FORCE MICROSCOPY
ANALYSIS FOR LOCAL ELECTRIC CHARACTERISTICS IN STRESSED SI02 GATE FILMS
Y. WATANABE1, A. SEKO2, H. KONDO2,A. SAKAI2, S. ZAIMA2 AND Y YASUDA2,
TOYOTA CENTRALR&D LABS.,INC. AND2NAGOYA UNIV., JAPAN 72 15:20 D-L-5
MEASUREMENT OFEXTENSION STRUCTURES IN DEEP SUB-MICRON MOSFETS BY
SCANNING CAPACITANCE MICROSCOPY BASED ON FREQUENCY MODULATION CONTROL Y
NAITOU AND N. OOKUBO,NEC CORP., JAPAN 74 XVIN 15 40 D-L-6 VALENCE-MENDED
SI(100) FORNANOELECTROMC APPLICATIONS M TAO,WP KIRK, D UDESHI, S
AGARWAL.E MALDONADO AND N BASIT, UMV OFTEXAS AT A) LINGTON, USA 76 D-2:
NEW MATERIALS AND CHARACTERIZATION - LOW K AND SILICIDE CHARACTERI7ATION
- (16 15 - 18 15) 16 15 D-2-1 NONDESTRUCTIVE CHARACTERIZATION OFPORE
SIZE DISTRIBUTIONS IN POROUS LOW-K FILMS BY M-SITU SPECTROSCOPIC
ELLIPSOMETRY IN VAPOR CELL C NEGORO .N HATAL2ANDT KIKKAWA2 ASRC AIST
2MIRAI-ASRC,AISTAND RCNS, 11 IIOSHIMA UMV, JAPAN 78 16 35 D-2-2
ACCUIATE MEASUREMENT OFMECHANICAL PROPEITIES OFNANOPOROUS SILICA
ULTRA-LOW-K FILMS Y SEINO ,R ICHIKAWA2, H TANAKA1 AND T KIKKAWA4,
MIRAI PIOJECT,ASRC, AIST, 2ASRC, AIST MIRAI PI OJEC T, ASET AND ^ RCNS
HUOSHIMA UMV, LAPAN 80 16 55 D-2-3 MECHANICAL PROPERTY AND SKELETAL
SILICATE STRUCTURE OF PERIODIC POROUS SILICA FILMS S TAKADA1,N HATA12, Y
SEINO1 K YAMADA3, Y OKU3 AND T KIKKAWA2 , ASRC,AIST M1RA1-ASRC, AIST,
MIRAI ASETAND RCNS,HUOSHIMA UM , JAPAN 82 17 15 D-2-4 DETERMINATION
OFTHE MECHANICAL PROPERTIES OFTHIN PERIODIC POROUS SILICA FILMS BY
LASER- GENERATED SURLACE ACOUSTIC WAVETECHNIQUE X XIAO .N HATA .K
YAMADA2, H TANAKA2 ANDT KIKKAWA MIRAI ASRC, AIST,2MIRAI- ASETANDJRCNS,
HUOSHINIA UNN , JAPAN 84 17 35 D-2-5 HRTEM AND EELS ANALYSES OF
INTERFACIAL NANOSTRUCTURES IN TI/SI, XGEX/SI(100) J YAMASAKI .N
TANAKA ,0 NAKATSUKA .A SAKAR, S ZAIMA3 AND Y YASUDA2, CIRSE, NAGOYA
UMV, NAGOYA UMV AND3CCRAST, NAGOYA UM ,JAPAN 86 17 55 D-2-6 IMPACT
OFNISI THERMAL INSTABILITY ON JUNCTION SHALLOWING CHARACTERIZED WITH
DAMAGE-FREE N+/P SILICON DIODES M TSUCHIAKI,K OHUCHI AND C HONGO,
TOSHIBA COIP , LAPAN 88 ROOM E E-L: QUANTUM NANOSTRUCTURE DEVICES AND
PHYSICS -FABRICATION AND MICROMECHANICS (14 00-16 00) 14 00 E-L-1
ELECTRONIC AND PHOTONIC DEVICES VIA ONE-DIMENSIONAL STACKING OF QUANTUM
STRUCTURES (INVITED) L SAMUELSON, LUND UNN , SOLID STATE PHYSIC SLTHE
NANOMETEI CONSOI TMM, SHEDEN 90 14 30 E-L-2 FORMATION OF LU.M-PENOD GAAS
KAGOME LATTICE STRUCTURE BY SELECTIVEAREA METALORGANICVAPOR PHASE
EPITAXY P MOHAN, J MOTOHISA ANDT FUKM, HOKKAIDO UNN , JAPAN 92 14 45
E-L-3 SELECTIVE MBE GROWTH OF GAAS HEXAGONAL NANO-WIRE NETWORKS ON
(LLL)B PATTERNED SUBSTRATES S YOSHIDA, I TAMAI.T SATO AND H HASEGAWA,
HOKKAIDO UMV, JAPAN 94 15 00 E-L-4 MIGRATION-INDUCEDGE DOT FORMATION S
KAECHI.D KITAYAMA ANDY SUDA, TOKVO UNN OFAGIICULTUIE AND TECHNOLOGY,
JAPAN % 15 15 E-L-5 DEMONSTRATION OFMEMS-CONTROLLED ELECTRONIC STATES IN
SINGLE QUANTUM DOTS T NAKAOKA1,T KAKITSUKA2, T SAITO1 ANDY ARAKAWA12,
RCAST, IIS, ANDCCR, THEUMV OF TOKVO AND 2NTT PHOTONIC TLABS, NTTCOIP
,JAPAN 98 15 30 E-L-6 DISPLACEMENT SENSING USING QUANTUM MECHANICAL
INTERFERENCE H YAMAGUCHI1, S MIYASHITA2 ANDY HIRAYAMA1 NTTBASIC
RESEARCH LABS, 2NTTAD ANCED TECHNOLOGY AND CRESTJST,JAPAN 100 15 45
E-L-7 ZNO METAL-LNSULATOR-SEMICONDUCTOR FIELD-EFFECT-TRANSISTORS J
NISHNL2,A OHTOMO .T FUKUMURA .K OHTANR.F MATSUKURA2,Y OHNO H OHNO1 AND
M KAWASAKI1, TOHOKU UNN AND2RIEC,TOHOKU UMV, JAPAN 102 E-2: QUANTUM
NANOSTRUCTURE DEVICES AND PHYSICS - NANOSTRUCTURED OPTICAL DEVICES - (16
15 - 18 15) 16 15 E-2-1 A LIGHT EMITTING DIODE FOR SINGLE PHOTONS
(INVITED) A J SHIELDS , Z YUAN1.MB WARD ,RM STEVENSON1, B E KARDYNAL .P
SEE .C LOBO2, P ATKINSON1 ANDDA RITCHIE1, TOSHIBA RESEAUH EMOPE LTD ,
CAMBNDQE RESEAICH LAB AND CCNENDISH LAB UNN O}CAMBNDGE,UK 104 XIX 16:45
E-2-2 COHERENT CONTROL OF EXITON IN A SINGLE QUANTUM DOT USING A
HIGH-RESOLUTION MICHELSON INTERFEROMETER T. OKADA1-21, K. KOMORI1-3, K.
GOSHIMA2-1, S. YAMAUCHI2-1, T. SUGAYA2-3, 0. YAMAZAKI4 AND T. HATTORI4,
TOKAI UNIV. JUNIOR COLLEGE, 2AIST, CREST-JSTAND4UNIV. OFTSUKUBA,JAPAN
106 17:00 E-2-3 VOLTAGE-CONTROLLED EMISSION WAVELENGTH SWITCHING IN A
PSEUDOMORPHIC SI, XGEX/SI DOUBLE QUANTUM WELL N. YASUHARA1 ANDS.
FUKATSU1-2, THE UNIV. OFTOKYO AND 2PRESTO-JST, JAPAN 108 17:15 E-2-4 A
SOLID-STATE MULTICOLOR LIGHT-EMITTING DEVICE BASED ON BALLISTIC ELECTRON
EXCITATIONS Y NAKAJIMA, T. UCHIDA, A. KOJIMA, B. GELLOZ AND N. KOSHIDA,
TOKYO UNIV. OFAGRICULTURE AND TECHNOLOGY, JAPAN 110 17:30 E-2-5 HIGH
BRIGHTNESS SI-BASED QUANTUM DOT LIGHT EMITTING DIODE M. JO1, N.
YASUHARA1, K. KAWAMOTO1 AND S. FUKATSU1-2, THE UNIV. OFTOKYO
AND2PRESTO-JST, JAPAN 112 17:45 E-2-6 GENERATION OF RADIATION PRESSURE
IN THERMALLY INDUCED ULTRASONIC EMITTER BASED ON NANOCRYSTALLINE SILICON
J. HIROTA1, PI. SHINODA2 AND N. KOSHIDA1, TOKYO UNIV. OFAGRICULTURE AND
TECHNOLOGYAND2THE UNIV. OFTOKYO, JAPAN 114 18:00 E-2-7L OPTICAL APPROACH
FOR SPIN DETECTION IN QUANTUM NANOSTRUCTURES B. KAESTNER AND J.
WUNDERLICH, HITACHI CAMBRIDGE LABAND CABENDISH LAB, UK 116 ROOM F F-L:
COMPOUND SEMICONDUCTOR MATERIALS AND DEVICES - III-V AND NITRIDE
ELECTRON DEVICES - (14:00-16:00) 14:00 F-L-1 ULTRAHIGH PERFORMANCE
INPHEMTS (INVITED) A. ENDOH1,Y YAMASHITA1, K. SHINOHARA2, K. HIKOSAKA1,
T. MATSUI2, S. HIYAMIZU3 AND T. MIMURA1, FUJITSULABS LTD.,
2COMMUNICATIONS RESEARCH LAB AND3OSAKA UNIV., JAPAN 118 14:30 F-L-2 HIGH
F, 30NM LN07GAASHEMT FABRICATED WITH SI02/SINX SIDEWALL GATE PROCESS AND
BCB PLANARIZATION D.-H. KIM, S.-J. YEON, S.-S. SONG AND K.-S. SEO,
SEOULNATIONAL UNIV., KOREA 120 14:45 F-L-3 OBSERVATION OFTHERMAL
RELIABILITY OFBCB PASSIVATED INALAS/INGAAS HEMTS M. YOON, T. KIM, D. KIM
AND K. YANG, KAIST, KOREA 122 15:00 F-L-4 HIGH FMAX 0.1 U,M T-GATE
INGAAS/INALAS/GAAS METAMORPHIC HEMT B.H. LEE1, B.O. LIM M.R. KIM1, S.D.
KIM1, J.K. RHEE1 AND H.S. YOON2, MINT, DONGGUK UNIV. AND 2ELECTRONICS
ANDTELECOMMUNICATIONS RESEARCH INST., KOREA 124 15:15 F-L-5 REDUCTION
OFTURN-ON VOLTAGE IN GALNNAS AND INGAAS BASE DOUBLE HETEROJUNCTION
BIPOLAR TRANSISTORS C.-H. WU, Y.-K. SU, S.-C. WEI AND S.-J. CHANG,
NATIONAL CHENG KUNG UNIV., TAIWAN 126 15:30 F-L-6 INP/INGAAS TUNNELING
EMITTER BIPOLARTRANSISTOR (TEBT) C.-Y. CHEN, H.-M. CHUANG, S.-I. FU,
P.-H. LAI,Y-Y TSAI, C.-I. KAO AND W.-C. LIU, NATIONAL CHENG-KUNG UNIV.,
TAIWAN 128 15:45 F-L-7 HIGH-QUALITY TWO-DIMENSIONAL ELECTRON GAS AT
LARGE SCALE GAN/ALGAN WAFER INTERFACE PREPARED BY MASS PRODUCTIONMOCVD
SYSTEMS S. YAMADA , T. OHNISHI , T. KAKEGAWA , M. AKABORI1, T. SUZUKI1,
H. SUGIURA2, F. NAKAMURA2, E. YAMAGUCHI2 AND H. KWAR, CNMT, JAISTAND
2POWDEC K.K.,JAPAN 130 F-2: COMPOUND SEMICONDUCTOR MATERIALS AND DEVICES
- NITRIDE ELECTRON DEVICES -(16:15-18:00) 16:15 F-2-1 MOVPE GROWTH OF
WURTZITE INN AND ITS CHARACTERISTICS (INVITED) T. MATSUOKA , H.
OKAMOTO2, M. NAKAO2, H. HARIMA3, H. TAKAHATA4, H. MITATE , S. MIZUNO4,
Y. UCHIYAMA5 AND T. MAKIMOTO , NTTBASIC RESEARCH LABS, 2NTTPHOTONICS
LABS, KYOTO INST, OF TECHNOLOGY, 1NTTADVANCEDTECHNOLOGY ANDSMEIJI
UNIV., JAPAN 132 16:45 F-2-2 EXTRINSIC BASE REGROWTH OF P-INGAN FOR
NPN-TYPE GAN/INGAN HETEROJUNCTION BIPOLAR TRANSISTOR T. MAKIMOTO , K.
KUMAKURA AND N. KOBAYASHI2, NTTBASIC RESEARCH LABS,NTT CORP. AND !THE
UNIV. OFELECTRO-COMMUNICATIONS, JAPAN 134 XX 17 00 F-2-3 IMPROVEMENT
OFDC ANDRF CHARACTERISTICS OFAIGAN/GANHEMTS BY THERMALLYANNEALED
NI/PT/AU SEHOTTKY GATE T NANJO .N MIURA ,T OISHI ,M SUITA1,Y ABE .T
OZEKI1, S NAKATSUKA .A INOUE1, T ISHIKAWA .Y MATSUDA .H ISHIKAWA2 ANDT
EGAWA2, MITSUBISHI ELECT)IC COIP AND 2NAGOYA INST OFTECHNOLOGY, JAPAN
136 17 15 F-2-4 THE IMPROVEMENT OFDC PERFORMANCE IN AIGAN/GAN HFETWITH
ISOELECTRONICAL DOPED CHANNEL CM JEON1, J -H LEE2,J -H LEE2 AND J -L
LEE , POSTECH AND KVUNGPOOK NATIONAL UNIX KOIEA 138 17 30 F-2-5 DIAIN
CURRENT DLTS OFAIGAN/GANMIS-HEMTS T OKINO,M OCHIAI, Y OHNO, S KISHIMOTO,
K MAEZAWAANDT MIZUTAM NAQOVAUMV JAPAN 140 17 45 F-2-6 LOW DAMAGE, HIGH
SELECTIVITY AR/CL2/CH4/02 GATE RECESS ETCHING FOR AIGAN/GAN HEMT
FABRICATION W-K WANG,Y-J LI, C K LIN,Y-J CHAN,G-T CHEN AND J-I CHYI,
NATIONAL CENTIAL UMV, TAIWAN 142 ROOMG G-L: ADVANCED SILICON CIRCUITS
AND SYSTEMS -ADVANCEDCMOS CIRCUITS AND SYSTEMS - (14 00 15 50) 14 00
G-L-1 SILICON INTEGIATION OFUWB CHOICES AND CHALLENGES (INVITED) S G
NARENDRA, CUCITITRESEAICH INTELLABI, USA 144 14 30 G-L-2 LOW-POWER
REAL-TIME REGION-GROWING IMAGE-SEGMENTATION IN 0 35U.MCMOS DUE TO
SUBDIVIDED- IMAGE AND BOUNDARY-ACTIVE-ONLYARCHITECTURES T MONMOTO,Y
HARADA, T KOIDE ANDH J MATTAUSCH, HUOSHIMAUMV JAPAN 146 14 50 G-L-3
BUTTEIFLY-UNIT BASED PROGRAMMABLE COMPUTATION ELEMENT USING MERGED
MODULE OF MULTIPLICATION, DIVISION AND SQUARE ROOT L KARNAN .N
MIYAMOTO , K MARUO2, K KOTANI1 ANDT OHMI3, TOHOKU UNIX, ADVANTEULABS
LTD ANDJNICHE, TOHOKU UMV, JAPAN 148 15 10 G-I-4 AHIERARCHICAL
512-KBITSRAM WITH 8 READ/WRITE PORTS IN 130NMCMOS S FUKAE .N OMON .T
KOIDE ,HJ MATTAUSCH1 ANDT HNONAKA2, RCNS, HUOSHIMA UMV AND 2HUOSHIMA
CITY UMV, JAPAN 150 15 30 G-L-5 COMBINED DATA/INSTRUCTION CACHE WITH
BANK-BASED MULTI-PORT ARCHITECTURE K JOHGUCHI .Z ZHU .T HIRAKAWA2,T
KOIDE , T HIRONAKA2 AND HJ MATTAUSCH1, RCNS PINOSHIMAUMV AND2HNOSLUMA
CITY UMV .JAPAN 152 G-2: ADVANCED SILICON CIRCUITS AND SYSTEMS -
COLLABORATION OF CIRCUITS AND DEVICES - (16 15 - 17 45) 16 15 G-2-1
PERFORMANCEOF DEEPLY-SCALED, POWER-CONSTRAINED CIRCUITS (INVITED) B
NIKOLIC,L CHANG ANDT-J KING, UMV OFCALIFORNIA, USA 154 16 45 G-2-2 ESD
CIRCUIT SIMULATION TECHNOLOGY USING PROTECTION DEVICE MODEL WITH
GENERATED-HOLE- DEPENDENT BASE RESISTANCE Y TOSAKA,H ANZAI,K SUZUKI ANDH
OKA, FUJITSU LABS LTD , JAPAN 156 17 05 G-2-3 ANEW PROTECTION CIRCUIT
OFIGBT (INSULATED GATE BIPOLAR TRANSISTOR) FOR SHORT-CIRCUIT
WITHSTANDING CAPABILITY B-C JEON , I H JI ,M K HAN ANDY-I CHOI1, SEOUL
NATIONAL UNIX AND AJOU UMV KOIEA 158 17 25 G-2-4 DYNAMIC HOLDING VOLTAGE
SCR (DHVSCR) DEVICE FOR ESD PROTECTION WITH HIGH LATCH-UP IMMUNITY Z-P
CHEN1 ANDM-D KER1, LNDITSTNALTECHNOLOGY RESEAICH INST AND^NATIONAL
CHIAO-TUNQ UMV, TAIWAN 160 XXI WEDNESDAY*SEPTEMBER 11 ROOMA A-3:
ADVANCED SILICON DEVICES AND DEVICE PHYSICS - HIGH-K TECHNOLOGY I -
(9:00 - 10:30) 9:00 A-3-1 INTEGRATION ISSUES OFHF02-AL203 LAMINATE FOR
GATE AND CAPACITOR DIELECTRIC (INVITED) J.-H. LEA, SAMSUNG ELECTRONICS
CO., LTD., KOREA 162 9:30 A-3-2 INFLUENCE OFCARRIER VELOCITY RELATED
PARAMETERS ON THE PROPAGATION DELAY TIME OFCMIS INVERTERS WITH HIGH-K
GATE DIELECTRICS M. ONO AND A. NISHIYAMA, TOSHIBA CORP., JAPAN 164 9:50
A-3-3 AHFALOX GATE DIELECTRIC FETTECHNOLOGY COMPATIBLE WITH A
CONVENTIONAL POLY-SI GATE CMOS PROCESS H. OHJI, A. MUTOH, K. TORII, R.
MITSUHASHI, A. HORIUCHI, T. MAEDA, H. ITOH, T. KAWAHARA, K. HAYASHI, T.
SASAKI, N. KASAI, H. KITAJIMA, M. YASUHIRA AND T. ARIKADO, SELETE,
JAPAN... 166 10:10 A-3-4 ANOVEL APPROACH FOR DETERMINATION OFTUNNELING
MASS, MO||-CONDUCLION BAND OFFSET ENEGY, EN, PRODUCTS FOR ADVANCED GATE
DIELECTRICS C.L. HINKLE, C. FULTON, R.J. NEMANICH AND G. LUCOVSKY, NORTH
CAROLINA STATE UNIV., USA ... 168 A-4: OPTOELECTRONIC DEVICES AND
PHOTONIC CRYSTAL DEVICES -VCSELS AND VISIBLE LASERS - (10:45 - 12:15)
10:45 A-4-1 I300NM-RANGE GALNNASSBVCSELS (INVITED) A. KASUKAWA, H.
SHIMIZU, C. SETIAGUNG, M. ARIGA,Y IKENAGA, K. KUMADA, T. HAMA AND N.
IWAI, THE FURUKAWA ELECTRIC CO., LTD., JAPAN 170 11:15 A-4-2 IMPROVEMENT
OF HIGH-SPEED OXIDE-CONFINED VERTICAL-CAVITY SURFACE-EMITTING LASERS
H.-C. YU1-2, S.-J. CHANG1, Y.-K. SU1, C.-P. SUNG2, H.-P. YANG2, C.-Y
HUANG2-3, Y.-W. LIN2, J.-M. WANG2, F.-I. LAI4 AND H.-C. KUO4,
NATIONALCHENG KUNG UNIV., 2INDUSTRIAL TECHNOLOGY RESEARCH INST.,
NATIONAL TSINGHUA UNIV. ANDV NATIONAL CHIAO TUNG UNIV., TAIWAN 172
11:30 A-4-3 FLIGH-POWER200-MW 660-NM ALGALNP LASER DIODES WITH ALOW
OPERATING CURRENT R. HIROYAMA , D. INOUE , S. KAMEYAMA1, A. TAJIRI1, M.
SHONO1, M. SAWADA2 AND A. IBARAKI1, SANYO ELECTRIC CO., LTD. AND
2TOTTORI SANYO ELECTRIC CO., LTD., JAPAN 174 11:45 A-4-4 HIGH POWER AND
HIGH TEMPERATURE OPERATION OF 660NM ALGALNP LASER DIODES FORDVD-R/RW Y.
YOSHIDA, H. NISHIGUCHI, M. SASAKI, S. ABE, A. OHNO, M. TAKEMI, K. ONO,
J. HORIE, H. MATSUOKA, Y. MIYAZAKI, T. YAGI AND E. OMURA, MITSUBISHI
ELECTRIC CORP., JAPAN 176 12:00 A-4-5L HIGH PERFORMANCE OF 1.54 U.M
INGAASPHIGH-POWER TAPERED LASER USING HIGH P-DOPED SEPARATE CONFINEMENT
LAYER AND STRAIN COMPENSATED MULTIPLE QUANTUM WELLS D.C. HEO , I.K.
HAN1, J.I. LEE AND J.C. JEONG2, KOREA INST, OFSCIENCE AND TECHNOLOGY
AND 2KOREA UNIV., KOREA 178 A-5: OPTOELECTRONIC DEVICES AND PHOTONIC
CRYSTAL DEVICES - OPTOELECTRONIC INTEGRATED DEVICES - (15:15 - 16:45)
15:15 A-5-1 MONOLITHICPD-EAM OPTICAL GATES FOR ULTRAFAST SIGNAL
PROCESSING (INVITED) S. KODAMA.T. YOSHIMATSU AND H. ITO, NTT CORP.,
JAPAN 180 15:45 A-5-2 INP-BASED OEIC PHOTORECEIVERS USING SHARED LAYER
INTEGRATION TECHNOLOGY OF HETEROJUNCTION BIPOLAR TIANSISTORS AND
REFRACTING-FACET PHOTODIODES B. LEE, Y. SONG AND K. YANG, KA/ST, KOREA
182 16:00 A-5-3 SOLID-STATE OPTICAL ROUTING DEVICE UTILIZING MINORITY
CARRIER DRIFT H. TSUKAMOTO, T.D. BOONE AND J.M. WOODALL, YALE UNIV., USA
184 16:15 A-5-4 ANALYSIS OFALGAAS/GAAS HETEROJUNCTION PHOTODETECTOR WITH
A TWO-DIMCNSIONAL CHANNEL MODULATED BY GATE VOLTAGE H. SONG AND H. KIM,
KOREA ELECTRONICS TECHNOLOGY INST., KOREA 186 16:30 A-5-5 ENHANCEMENT OF
MAGNETO-OPTIC EFFECT IN MAGNETO-OPTIC WAVEGUIDE WITH LOW REFRACTIVE
INDEX UNDERCLADDINGLAYER Y SHOJI , H. YOKOI -2 AND T. MIZUMOTO1, TOKYO
INST, OFTECHNOLOGY AND 2OITDA, JAPAN 188 XXN A-6: OPTOELECTRONIC DEVICES
AND PHOTONIC CRYSTAL DEVICES - LASERS FOR OPTICAL COMMUNICATION - (17 00
- 18 15) 17 00 A-6-1 ADVANCES IN WIDELY-TUNABLE OPTICAL TRANSMITTERS
(INVITED) LA COLDREN ANDG F SH,AGDITY COMMUNICATIONSANDUC SANTABAIBAIA,
USA 190 17 30 A-6-2 40GHZ ACTIVELY MODE-LOCKED DBR LASER DIODE MODULE
WITH AN IMPEDANCE MATCHING CIRCUIT S ARAHIRA ANDY OGAWA, OKI ELECT/IC
INDUSTIY CO , LTD JAPAN 192 17 45 A-6-3 VERY HIGH FREQUENCY
SELF-PULSATION AND STABLE OPTICAL INJECTION LOCKING FORWELL-DEFINED
MULTI- ELECTIODEDFB LASERS S NISHIKAWA12,M GOTODA 2,T NISHIMURA 2,Y
TOKUDA12 AND K MATSUMOTO12, MITSUBISHI ELECTI IC COIP AND - OTTDA,
JAPAN 194 18 00 A-6-4 LASING-WAVELENGTH-CHANGE-SUPPRESSION 980 NM PUMP
LASER DIODES FOI METRO APPLICATIONS K KAWASAKI, K SHIGIHARA,H MATSUOKA,Y
KUNITSUGU, T YAGI,E OMURA AND Y MITSUI, MITSUBISHI ELECT) IC COIP LAPAN
196 ROOM B B-3: NON-VOLATILE MEMORYTECHNOLOGIES - NON-VOLATILE MEMORY
III - (9 00 - 10 20) 9 00 B-3-1 FLOATING GATETYPE NONVOLATILE MEMORY
RELIABILITYISSUES (INVITED) G TEMPEL, INFINEON TECHNOLOGIES, GEIMANY 198
9 30 B-3-2 THE PIOSPECT OFNEW EMERGING MEMORIES (INVITED) H JEONG ANDK
KIM,SAMSUNG ELECT)ONUS, KOIEA 200 10 00 B-3-3 PROPOSAL OFNEW
NON-VOLATILE MEMORY WITH MAGNETIC NANO-DOTS T SAKAGUCHI.M KOBAYASHI,M
TAKATA, H CHOI,Y-G HONG, J-C SHIM H KUNNO AND M KOYANAGI, TOHOKUUMV,
JAPAN 202 B-4: NON-VOLATILEMEMORYTECHNOLOGIES - NON-VOLATILE MEMOIY IV -
(10 45 - 12 05) 10 45 B-4-1 A0 18-U.M EMBEDDEDMNOS-TYPE NON-VOLATILE
MEMORY FORHIGH-FREQUENCY AND LOW-VOLTAGE OPERATION N MATSUZAKI .T
ISHIMARU1,Y OKUYAMA1^ MME ,H KUME ,T HASHIMOTO2, Y KANAMARU2, T SAKAI Y
KAWASHIMA2, F ITO2,M MIZUNO2,K OKUYAMA2,Y SHINAGAWA2, K KURODA2, S
MEGURO2 ANDT TOYA2, HITACHI LTD AND2RENESAS TECHNOLOGY COIP .JAPAN 204
11 05 B-4-2 70 NM SONOS NONVOLATILE MEMORY DEVICES USING FN PROGRAMMING
AND HOT HOLEEIASE METHOD SD CHAE .CJ LEE2,JH KIM .SK SUNG2, J S SIM2,M K
KIM1, SW YOON1, YS JEONG1, WI RYU ,TH KIM2, B-G PARK2, JW LEE ANDCW
KIM1, SAMSUNGADXANCEDINST OF TECHNOLOGY AND 2SEOULNATIONAL UMV, KOIEA
206 11 25 B-4-3 EXCELLENT ELECTRICAL CHARACTENSTICS OFSONOS-TYPE FLASH
MEMORY WITH HIGH-K DIELECTRIC AS TRAPPING LAYER AND BLOCKING LAYER M
CHO1, S CHOI1, JW KIM2 AND H HWANG , KHANGJU INST OFSCIENCEAND
TECHNOLOGYAND SAMSUNGADVANCED INST OFTECHNOLOGY, KOIEA 208 11 45 B-4-4
DATA RETENTION IMPROVEMENT OFMONOS MEMORIES BY USING SIHCON-TETRACHLONDE
BASED SILICON NITRIDE WITH ULTRA-LOW SI-H BOND DENSITY K NOMOTO,G
ASAYAMA ANDT KOBAYASHI, SONY COIP , JAPAN 210 B-5: ORGANIC SEMICONDUCTOR
DEVICES AND MATERIALS - PIEPAIATION AND CHARACTERIZATION - (15 15 - 16
45) 15 15 B-5-1 CONTROLLING THE MORPHOLOGY OFNANOSTRUCTURED
POLY(FLUORENYLENEETHYNYLENE) FILM BY A SIMPLE METHOD K TADAANDM ONODA,
HIMEJI INST OFTECHNOLOGY, JAPAN 212 15 30 B-5-2 ANOMALOUS GROWTH
TEMPERATURE DEPENDENCE OF THE SURFACE ROUGHNESS OFPENTACENE THIN FILMS M
TEJIMA,T KOMODA,K KITA,K KYUNOANDA TORIUMI, THE UMV OFTOKYO,JAPAN 214 15
45 B-5-3 FABRICATION AND PHOTOELECTROCHEMICAL PROPERTIES OF
POLYTHIOPHENE-PORPHYNN COMPOSITE FILMS T AKIYAMA,K KAKUTANI AND S
YAMADA, KYUSHU UMV,JAPAN 216 XXM 16 00 B-5-4 HIGH RESOLUTION PATTERN
RECORDING ON PHOTOSENSITIVE URETHANE-UIEA COPOLYMER FILM SUIFACE BY
LASER IRRADIATION THROUGH PHOTO-MASK YCHE ,0 SUGIHAIA .N OKAMOTO ,M
TOMIKI .M TSUCHIMON2 ANDO WATANABE2, SHIZUOKA UMV AND 2TOYOTA CENT/ AL
RESEAI CH ANDDEVELOPMENT LABS INC ,JAPAN 218 16 15 B-5-5 ELECTRICAL
PROPEITIES AND GAS RESPONSE IN ALTERNATE LAYER-BY-LAYER FILMS OFCOPPER
PHTHALOCYANINE DYES K KATO ,N WATANABE1, S KATAGUI ,K SHINBO .F KANEKO1
ANDRC ADVMCULA2, NITGATA UMV, JAPAN AND2UMV OFHOUSTON, USA 220 16 30
B-5-6L ORGANIC THIN-FILM TIANSISTOIS WITH ALIGNMENT-FREE PNNTABLE
ELECTRODES M ANDO12,H SASAKI2,M KAWASAKI12,S IMAZEKI12 ANDT KAMATA1,
OITDA, 2HITACLV, LTD AND AIST, JAPAN 222 B-6: NON-VOLATILE MEMORY
TECHNOLOGIES - NON-VOLATILEMEMOIYV - (17 00 - 18 10) 17 00 B-6-1 HOT
CANLER INJECTION/FOWLEI NOIDHEIM EIASE SILICON NANOCIYSTAL MEMORY CELL
RA RAO, R F STEIMLE,M SADD, C SWIFT,R MUIALIDHAR, B HIADSKY, S STIAUB, E
PNNZ, J YATEI ANDB E WHITE JR, MOTOWLASPS, USA 224 17 20 B-6-2 ANEW
INVESTIGATION ON ERASE V, VARIATION OFNOR FLASH FABNCATED WITH 90 NM
TECHNOLOGY TY KIM,WH LEE, J I HAN, S E LEE,HG LEE, SY KIM, J H PARK, SW
PAI K, J H CHOI, M K CHO,YH SONG AND K KIM, SAMSIMS ELECT)ONIC S CO ,
LTD, KOIEA 226 17 40 B-6-3L VT DRIFT OF CYCLED TWO-BIT M/UOFLASH CELLS
P ZISMAN,Y ROIZM ANDM GUTMAN, LOWCI SEMICONDUCTOI L TD , HIAEL 228 17 55
B-6-4L ON THE READ STABILITY OF SSI FLASH C-M LIU, J DIRGA, B G LEE AND
PV VOORDE, WINBOIIDELECTIOMCSCOIP OFANIETICA USA 230 ROOM C C-3: SILICON
PROCESS/MATERIALS TECHNOLOGIES - MEMORYTECHNOLOGY - (9 00 - 10 30) 9 00
C-3-1 0 18 U.M EMBEDDEDFRAM FABRICATION PROCESS AND ITS CONSISTENCY WITH
CONVENTIONAL LOGIC LSI PROCESS (INVITED) Y HORN ANDT ESHITA,FUJITSU
LIMITED, JAPAN 232 9 30 C-3-2 W-POLYMETAL GATE WITHLOW W/POLY-SI
INTEIFACE RESISTANCE LOR HIGH-SPEED/HIGH-DENSITY EMBEDDED MEMORY T
YAMASHITA, Y NISHIDA,K HAYASHI,T EIMON,M INUISHIANDY OHJI, RENESAS
TECHNOLOGY COIP , JAPAN 234 9 50 C-3-3 SILICON SELECTIVE EPITAXIAL
GIOWTH FOR SELF-ALIGNED CELL CONTACT FEATURING HIGH PERFONNANCE
SUB-LOONM DRAM CELL TIANSISTORS TJ KIM,YP KIM, B C LEE, S CHOI,U I CHUNG
AND JT MOON, SAMSUNG ELECTIOMCS CO, LTD KOIEA 236 10 10 C-3-4 OPTIMUM
TISI2 OHMIC CONTACT PROCESS FOI SUB-LOONM DEVICES H S PAIK, JM LEE, SW
LEE, J H PARK,K J MOON, S B KANG, G H CHOI, U I CHUNG AND JT MOON,
SAMSUNG ELECTIOMCS CO LTD, KOIEA 238 C-4: SILICON PROCESS/MATERIALS
TECHNOLOGIES -DRAM - (10 45 - 12 05) 10 45 C-4-1 PT/BST/PT
CAPACITORTECHNOLOGY TOR 0 15U.M EMBEDDEDDRAM Y TSUNEMINE .T OKUDANA , K
KASHIHARA ,A YUTANI1, K YAMADA1, H SHINKAWATA1, MK MAZUMDEI .Y OHNO .H
ITOH , M YONEDA ,Y OKUNO2,A TSUZUMITAM2,H OGAWA2 ANDY MON2, MITSUBISHI
ELECT) IC COIP AND2MATSUSHITAELECTIOMCS COIP , LAPAN 240 11 05 C-4-2 LOW
RESISTIVE CONTACTS OFTIN-BARNEI AND RU-ELECTIODE USING PCM SPUTTENNG FOI
MIM-TA20, CAPACITORS IN GIGA-BITDRAMS YNAKAMUIA.T KAWAGOE, H SAKUMA, H
YAMAGUCHI, I ASANO,M HONKAWA, K KUIOKI, K TANAKA,Y UEDA ANDH GOTO,
ELPIDAMEMOI Y, INC , JAPAN 242 XXIV 11 25 C-4-3 A NOBLE SION/ALO
STIUCTURE AT HIGH-K/POLY-SI INTERFACE FOR STOIAGE CAPACITORS OF HIGH
DENSITY DRAMS O TONOMUIA ANDH MIKI,HITACHI LTD, JAPAN 244 11 45 C-4-4 A
HIGHLY RELIABLE TIN/AI203/TIN MIM TECHNOLOGY FOR EMBEDDED DRAMS L -L
CHAO, CD WU,HL LIN,YL TU, KY LIN,C -Y YU, CY CHEN, F J SHIU,C T HO, C -S
TSAI, S -G WUU ANDC WANG, TAIWAN SEMICONDUCTOI MANUFACTIUING COMPANY,
LTD , TAIWAN 246 C-5: SILICON PROCESS/MATERIALS TECHNOLOGIES -
INTERCONNECT - (15 15 - 16 45) 15 15 C-5-1 STRESS MIGIATION PHENOMENA
OFCU INTERCONNECTS (INVITED) T OSHIMA,K ISHIKAWA, T SAITO,H AOKI ANDK
HINODE, HITACHI, LTD , JAPAN 248 15 45 C-5-2 MECHANICAL PROPERTY CONTROL
OFLOW-K DIELECTRICS FOR DIMINISHING CMP-IELATED DEFECTS IN CU- DAMASCENE
INTERCONNECTS K HIJIOKA,F ITO,M TAGAMI, H OHTAKE,T TAKEUCHI, S SAITOH
ANDY HAYASHI,NEC COIP , JAPAN 250 16 05 C-5-3 THE DELAMINATION MECHANISM
OFPOROUS LOW-K FILM DURING THE CU-CMP PROCESS S RONDO1,T NASUNO .S
OGAWA ,S TOKITOU ,BU YOON1,A NAMIKF,Y SONE2, K MISAWA1, T YOSHIE ,K
YONEDA ,M SHIMADA .S SONE .HJ SHIN .N OHASHI ,1 MATSUMOTO AND N
KOBAYASHI1, SELETE AND2NOX EDITS SVSTEMS JAPAN INC ,JAPAN 252 16 25
C-5-4 IN-SITU MEASUREMENTOF FRICTION FORCE DURING CU CHEMICAL MECHANICAL
POLISHING H MATSUO .A ISHIKAWA1 ANDT KIKKAWA23, MIRAI ASET, AIST,
MIRAI-ASRC,AISTAND JRCNS, HUOSHIMA UMV, JAPAN 254 C-6: SILICON
PROCESS/MATERIALS TECHNOLOGIES - INTERCONNECT - (17 00 - 18 20) 17 00
C-6-1 HIGH-MODULUS POROUSMSQ FILMS FOR CU/LOW-K INTEGRATION (KEFF 2 7)
K MISAWA, S SONE,H J SHIN,K INUKAI,Y SUDO, S KONDO, B U YOON, S TOKITOH,
K YONEDA,T YOSHIE,N OHASHI ANDN KOBAYASHI,SELETE, JAPAN 256 17 20 C-6-2
CONTROL OFPORE SIZE AND POROSITY IN PERIODIC POROUS SILICA LOW-K FILMS N
HATA 2, C NEGORO2,K YAMADA3 AND T KIKKAWA 4, MIRAI-ASRC,AIST,
2ASRC,AIST, JMIRAI-ASET,AISTAND4 RCNS, HUOSHIMA UMV, JAPAN . 258 17 40
C-6-3 OFF-TIME DEPENDENCE OFPULSED DC ELECTROMIGRATIONMTFOF CU
MULTILEVEL INTERCONNECTION K OSHIMA,T ISHIDA, S MIYAZAKI, T TAKAHAGI AND
S SHINGUBARA, HUOSHIMA UNIX JAPAN 260 18 00 C-6-4 CVD-AL/FLOW-AL
TECHNOLOGY FOR FILLING LARGEASPECT RATIO CONTACT HOLES M SAKAMOTO ,T
AOKI ,K MASU , S J LIM2,M HATANAKA2, M ISHIKAWA2 ANDY FURUMURA3, TOKYO
INST OFTECHNOLOGX, 2ULVAC JNC AND3PLNLBIIDGE INC JAPAN 262 ROOM D D-3:
SILICON-ON-INSULATOR TECHNOLOGIES - SOI NOVEL DEVICES - (9 00 - 10 30) 9
00 D-3-1 STRAINED SIMOSFETS ON SIGE-ON-INSULATOR (SGOI) FOR HIGH
PERFORMANCECMOSTECHNOLOGY (INVITED) K RIM, BH LEE,A MOCUTA, K JENKINS, S
BEDELL, H CHEN,D SADANA,M GNBELYUK, J. OTT, K CHAN,L SHI, J CHU, D
BOYD,P MOONEY,P O NEIL, E LEOBANDUNG ANDJ J WEHEUSRDC IBM, USA 264 9 30
D-3-2 FABRICATION OFULTRA-THIN STRAINED GE-ON-INSULATOI SUBSTRATE BY
GE-CONDENSATION TECHNIQUE S NAKAHARAI.T TEZUKA,N SUGIYAMA,Y MONYAMA AND
S TAKAGI MIRAI ASET, JAPAN 266 9 50 D-3-3 IMPACTIONIZATION IN UMAXIALLY
STRAINED-SI MOSFET N WATANABE,Y MAEDA,M NISHISAKA ANDT ASANO, KYUSHU
INST OFTECHNOLOGY,JAPAN 268 10 10 D-3-4 QUANTUM CONFINEMENT EFFECT
OFULTRATHIN-SOI ON DOUBLE-GATE-NMOSFETS H WATANABE,K UCHIDA ANDA
KINOSHITA, TOSHIBA COIP , JAPAN 270 XXV D-4: SILICON-ON-INSULATOR
TECHNOLOGIES - SOI DEVICE PHYSICS - (10:45 - 12:05) 10:45 D-4-1 VARIABLE
BODY EFFECT FACTOR FD SOI MOSFET FOR ULTRA-LOW POWERVTCMOS APPLICATIONS
T. OHTOU, T. NAGUMO AND T. HIRAMOTO, THE UNIV. OFTOKYO, JAPAN 272 11:05
D-4-2 NOVEL SOIMOSFETS WITH BURIED BACK-GATE H. OH, H. CHOI, T.
SAKAGUCHI, J.C. SHIM, H. KURINO AND M. KOYANAGI, TOHOKU UNIV., JAPAN 274
11:25 D-4-3 MODELING OFFULLY-DEPLETEDSOI DEVICEVARIATION H.
KOMATSUBARA1, K. KISHIRO ,Y KAWAI2, N. MIURA1 AND K. FUKUDA , OKI
ELECTRIC INDUSTRY CO., LTD. AND2MIYAGI OKIELECTRIC INDUSTRY CO., LTD.,
JAPAN 276 11:45 D-4-4 TEMPERATURE DEPENDENCE OFTHRESHOLD VOLTAGE AND HOT
CARRIER DEGRADATION OF DYNAMIC THRESHOLD SOI-PMOSFETS Y.-J. LEE1, T.-S.
CHAO -2, C.-Y HUANG1, H.-C. LIN2 AND T.-Y HUANG1, NATIONAL CLIIAO TUNG
UNIV. AND2NATIONALNANO DEVICE LABS, TAIWAN 278 D-S:
SILICON-ON-INSULATORTECHNOLOGIES - FIN FET TECHNOLOGIES - (15:15 -
16:45) 15:15 D-5-1 FINFET PROMISE AND CHALLENGES (INVITED) T.-J. KING,
UNIV. OFCALIFORNIA, USA 280 15:45 D-5-2 HIGH-ASPECT RATIO GATE FORMATION
OF BEAM-CHANNEL MOS TRANSISTOR WITH IMPURITY-ENHANCED OXIDATION
OFSILICON GATE A. KATAKAMI1, K. KOBAYASHI2 AND H. SUNAMI2, FUJITSU LABS
LTD. AND2RCNS, HIROSHIMA UNIV., JAPAN 282 16:05 D-5-3 AN EXPERIMENTAL
STUDY OFTHE CROSS-SECTIONAL CHANNEL SHAPE DEPENDENCE OF SHORT-CHANNEL
EFFECTS IN FIN-TYPE DOUBLE-GATE MOSFETS Y LIU, K. ISHII, M. MASAHARA, T.
TSUTSUMI, H. TAKASHIMA AND E. SUZUKI, AIST, JAPAN 284 16:25 D-5-4
P-CHANNEL VERTICAL DOUBLE-GATEMOSFET FABRICATION BY
ION-BOMBARDMENT-RETARDED ETCHING M. MASAHARA, T. MATSUKAWA, S. HOSOKAWA,
K. ISHII, Y. LIU, H. TANOUE, K. SAKAMOTO, H. YAMAUCHI, S. KANEMARU AND
E. SUZUKI, AIST, JAPAN 286 D-6: NEW MATERIALS AND CHARACTERIZATION -
SI/SIGC DEVICES AND MATERIALS - (17:00 - 18:30) 17:00 D-6-1
SIGEINADVANCEDCMOS DEVICES -AN UNIQUE MATERIAL EQUALLY HELPFULWHEN
PRESENT ORABSENT (INVITED) T. SKOTNICKI, STMICROELECTRONICS, CROLLED,
FRANCE 288 17:30 D-6-2 STRUCTURAL CHARACTERIZATION OF STRAINED SILICON
SUBSTRATES BY X-RAY DIFFRACTION AND REFLECTIVITY M. ERDTMANN, T.A.
LANGDO, C.J. VINEIS, H. BADAWI AND M.T. BULSARA, AMBERWAVE SYSTEMS
CORP., USA 290 17:50 D-6-3 OXIDATION-INDUCEDDAMAGES ON GERMANIUMMIS
CAPACITORS WITH HF02 GATE DIELECTRICS K. KITA, M. SASAGAWA, K. TOMIDA,
K. KYUNO AND A. TORIUMI, THE UNIV. OFTOKYO, JAPAN 292 18:10 D-6-4
ENHANCED METAL-INDUCED LATERAL CRYSTALLIZATION IN AMORPHOUS GE/SI
LAYERED STRUCTURE BY PRECURSOR MODULATION H. KANNO, A. KENJO, T. SADOH
AND M. MIYAO, KYUSHU UNIV., JAPAN 294 ROOM E E-3: QUANTUM NANOSTRUCTURE
DEVICES AND PHYSICS - CHARACTERIZATION AND NANOPROBING - (9:00 - 10:30)
9:00 E-3-1 OPTICAL CHARACTERISTICS OFINAS/GAAS DOUBLE QUANTUM DOTS GROWN
BYMBE WITH INDIUM-FLUSH METHOD S. YAMAUCHI -2, K. KOMORI -2, T.
SUGAYA -2 AND K. GOSHIMA -2, AISTAND 2CREST-JST,JAPAN 296 9:15 E-3-2
MOLECULAR STATES OF COUPLED ZERO-DIMENSIONAL STRUCTURES IMAGED USING
LOW-TEMPERATURE SCANNING TUNNELING SPECTROSCOPY K. KANISAWA1, S.
PERRAUD1-2, H. YAMAGUCHI AND Y HIRAYAMA1-3, NITCORP., JAPAN, 2ESPCI,
FRANCE AND 3CREST-JST,JAPAN 298 XXVI 9 30 E-3-3 ELECTIONIC CHARGED
STATES OFSINGLE SI QUANTUM DOTS WITH GE CORE AS DETECTED BY AFM/KELVIN
PROBE TECHNIQUE Y DARMA,K TAKEUCHI AND S MIYAZAKI, HUOSHIMAUMV, JAPAN
300 9 45 E-3-4 MAGNETO-LUMINESCENCE OF INTERDIFFUSED SELF-ASSEMBLED
QUANTUM DOTS S AWIROTHANANON 2,W SHENG .A BABINSKI1, S STUDENIKIN , S
RAYMOND , P HAWRYLAK A SACHRAJDA1,M POTEMSKI3, G ORTNER4ANDM BAYER1,
NATIONAL RESEAICH COUNCIL OFCANADA, 2THE UMV OFOTTAWA,CANADA, MP1IFKF
ANDCNRS. FIANCE AND4 UNNEISITAT DOITMUND GEIMANY * 302 10 00 E-3-5
OPTICAL TIME-OF-FLIGHT STUDY OF LATERAL EXCITON TIANSPOIT IN A STIAINED
SI, XGEX/SI MULTIPLE QUANTUM WELL K SAWADA ,N YASUHARA1 AND S FUKATSU 2,
THEUMV OFTOKYOAND 2PRESTO-JST, JAPAN 304 10 15 E-3-6L ELECTRON SPIN
RELAXATION DURING TRANSPORT IN GAAS Y SATO ,Y TAKAHASHI2,Y KAWAMURA 3
ANDH KAWAGUCHI 2, CREST-JST, 2YAMAGATAUMV AND OSAKA PIEFECTUIE UMV,
JAPAN 306 E-4: QUANTUM NANOSTRUCTURE DEVICES AND PHYSICS - SPIN-IELATED
PHENOMENA - (10 45 - 12:15) 10 45 E-4-1 CONTROL OFFERROMAGNETIC ORDER IN
SELECTIVELYP-DOPED GAMNAS-BASED HETEIOSTRUCTUIES (INVITED) M TANAKA12
ANDA M NAZMUL12, THE UMV OFTOKYO AND2PRESTO-1ST, JAPAN 308 11 15 E-4-2
EFFECT OF INTERLAYEI EXCHANGE COUPLING ON THE CURIETEMPERATURE IN
GAUMNXASTNLAYER STRUCTURES SHU YULDASHEV ,Y KIM .N KIM ,H IM .TW KANG ,
S LEE2,Y SASAKI3, X LM3AND JK FURDYNA3, DONGGUK UMV, 2KOIEA UMV , KOIEA
AND UMV OFNOTIE DAME USA 310 11 30 E-4-3 MAGNETIC PROPERTIES OF
SUBMICRON-SIZED/;-INOG7MN003AS FERROMAGNETIC SEMICONDUCTORS YSEKME ,J
NITTAL2,T KOGA13,A OIWA14, S YANAGI4,T SLUPMSKI5 ANDH MUNEKATA4, NTT
COIP , 2CRESTJST, PRESTO-JST,4 TOKVO INST OFTECHNOLOGY JAPAN AND
^WAISAW UNIV.POLAND 312 11 45 E-4-4 ANALYSIS AND CONTROL OFRASHBA
SPIN-SPLITTING IN ONE-DIMENSIONAL CONDUCTORS AT NARROW-GAP SINGLE
HETEROJUNCTIONS T KAKEGAWA1, T KITA2,T SATO ,M AKABON AND S YAMADA ,
CNMT, JAISTAND2RIEC, TOHOKUUMV JAPAN 314 12 00 E-4-5 AU/GAAS
MAGNETORESISTIVE-SWITCH-EFFECT DEVICES FABRICATED BY WET ETCHING ZG
SUN,M MIZUGUCHI ANDH AKINAGA, SYNAF, AIST, JAPAN 316 E-5: QUANTUM
NANOSTRUCTURE DEVICES AND PHYSICS - SINGLE ELECTRONTRANSPORT - (15 15 -
16 30) 15 15 E-5-1 NUCLEAR SPIN DEPENDENT TRANSPORT IN QUANTUM DOTS
(INVITED) K ONO1 AND S TARUCHA 23, THEUMV OFTOKYO,2NTTBASIC RESEAICH
LABS AND ERATO JST, JAPAN 318 15 45 E-5-2 SINGLE ELECTION TRANSPORT
THROUGH SINGLE INAS QUANTUM DOTS PIOBED BY NANOGAP ELECTRODES M JUNG1
AND K HIRAKAWA 2, THE UMV OFTOKYO AND2CREST, JAPAN 320 16 00 E-5-3
INVESTIGATION OFELECTRON TRANSITION ENERGY FOR VERTICALLY COUPLED
INAS/GAAS SEMICONDUCTOR QUANTUM DOTS AND RINGS Y LI12 ANDH-M LU3,
NATIONAL NANO DEVICE LABS, 2NATWNAL CHIAO TUNG UMV, TAIWAN AND JUMV
OFILLINOIS AT CHICAQO, USA 322 16 15 E-5-4 1-BITBDD FULL ADDER CIRCUIT
USING SINGLE ELECTRON TRANSISTOIS BY SELECTIVEAREA METALORGANIC
VAPORPHASE EPITAXY Y MIYOSHI, F NAKAJIMA, J MOTOHISAANDT FUKU , HOKKAIDO
UMV JAPAN 324 E-6: NOVEL DEVICES, PHYSICS AND FABRICATION - NANOPROCESS
AND NANODEVICES - (17 00 - 18 30) 17 00 E-6-1 MULTI-LEVEL NANOIMPNNT
LITHOGRAPHY FOR SUB-10 NM, HIGH-THROUGHPUT, LOW-COST PATTERNING
(INVITED) SY CHOU, PIINCETON UMV, USA 926 17 30 E-6-2 PHOTON-INDUCED
EFFECT ON SINGLE-CHARGE-TUNNELING IN A SI MULTIDOT SCHOTTKY FET R
NURYADI, H IKEDA,Y ISHIKAWA ANDM UZBZ, SLUZUOKA UMV, JAPAN 326 XXVU
17:45 E-6-3 ROOM-TEMPERATURE OBSERVATION OF NEGATIVE DIFFERENTIAL
CONDUCTANCE DUE TO LARGE QUANTUM LEVEL SPACING IN SILICON
SINGLE-ELECTRON TRANSISTOR M. SAITOH AND T. HIRAMOTO, THE UNIV. OFTOKYO,
JAPAN 328 18:00 E-6-4 ANALYTICAL SPICE MODELING OF REALISTIC MOS-BASED
SINGLE-ELECTRON TRANSISTORS - MOSETS WITH A UNIQUE DISTRIBUTION
FUNCTION IN THE COULOMB OSCILLATION REGION K.R. KIM, K.-W. SONG, G.
BAEK, H.H. KIM, J.L HUH, J.D. LEE AND B.-G. PARK, SEOUL NATIONAL UNIV.,
KOREA 330 18:15 E-6-5 ANALYSIS OF BACK-GATE VOLTAGE DEPENDENCE
OF.THRESHOLD VOLTAGE OFTHIN SOI MOSFET AND ITS APPLICATION TO SI
SINGLE-ELECTRON TRANSISTOR S. HORIGUCHI, A. FUJIWARA, H. INOKAWA ANDY
TAKAHASHI,NTTCORP., JAPAN 332 ROOM F F-3: COMPOUND SEMICONDUCTOR
MATERIALS AND DEVICES - NOVEL COMPOUND SEMICONDUCTORS DEVICES - (9:00 -
10:30) 9:00 F-3-1 OPTICAL AND ELECTRICAL CONTROL OF FERROINAGNELISM IN
II-VI QUANTUM WELLS (INVITED) T. DIETL, INST, OFPHYSICS, POLISH ACADEMY
OFSCIENCE. POLAND 334 9:30 F-3-2 TYPE-II INAS-BASED QUANTUM CASCADE
LASERS (INVITED) K. OHTANI AND H. OHNO, RIEC, TOHOKU UNIV., JAPAN 336
10:00 F-3-3 FABRICATION OFGAN/ALUMINA/GAN STRUCTURE TO REDUCE
DISLOCATIONS INGAN M. HIROKI1, K. KUMAKURA .T. MAKIMOTO1, N. KOBAYASHI2
ANDT. KOBAYASHI1, NTTCORP. AND 2THE UNIV. OFELECTRO-COMMUNICATIONS,
JAPAN 338 10:15 F-3-4L UNIFORMITY STUDIES OFMOCVD GROWN AIGAN/GANHEMTS
ON 100-MM DIAMETER SAPPHIRE S.ARULKUMARAN1, M. MIYOSHI1-2, T. EGAWA1, H.
ISHIKAWA1 AND T. JIMBO , NAGOYA INST, OF TECHNOLOGY AND 2NGK INSULATROS
LTD., JAPAN 340 F-4: COMPOUND SEMICONDUCTOR MATERIALS AND DEVICES
-OPTICAL DEVICES - (10:45 - 12:15) 10:45 F-4-1 DEVELOPMENTS OF HIGH
EFFICIENCY IN GAN-BASED LIGHT-EMITTING DIODES (INVITED) J.-I. CHYI,
C.-C. PAN, C.-M. LEE, W.-J. HSU AND C.-S. FANG,NATIONALCENTRAL UNIV.,
TAIWAN 342 11:15 F-4-2 INGAN-BASED HORIZONTAL CAVITY SURFACE EMITTING
LASER DIODE WITH SELECTIVELY GROWN CAVITY AND OUTER MICROMIRRORS T.
AKASAKA, T. NISHIDA, T. MAKIMOTO AND N. KOBAYASHI, NTTCORP., JAPAN 344
11:30 F-4-3 SUB-MILLIWATT OPERATION OF308NM DEEP UVLED USING QUATERNARY
INAIGAN H. HIRAYAMA AND Y. AOYAGI2, RJKENAND2TOKYO INST,
OFTECLUIOLOGY, JAPAN 346 11 ;45 F-4-4 LOW TEMPERATURE P-GAN ROUGH LAYER
ON IN023GAU*N/GANMQW LEDS L.W. WU1, S.J. CHANG1, Y.K. SU1,W.C. LAI2 AND
J.K. SHEU3, NATIONAL CHENG KUNG UNIV., 2SOUTH EPITAXY CORP. AND
- NATIONAL CENTRAL UNIV., TAIWAN 348 12:00 F-4-5 IMPROVEMENT
OFALGALNPMQW LIGHT EMITTING DIODES BY MODIFICATION OF OHMIC CONTACT
LAYER H.C. WANG1, Y.K. SU1, C.L. LIN1, W.B. CHEN1, S.M. CHEN2 AND W.L.
LI2, NATIONAL C/WNG KUNG UNIV. AND2EPITECH TECHNOLOGY CORP., TAIWAN 350
F-5: MICRO-NANO ELECTROMECHANICAL DEVICES FOR BIO- AND CHEMICAL
APPLICATIONS - MICRO-NANO ELECTRO MECHANICAL DEVICES FOR BIO- AND
CHEMICAL APPLICATIONS -I - (15:15 - 16:45) 15:15 F-5-1 DNACHIPS AND
THEIR MEDICAL APPLICATIONS (INVITED) P. FORTINA1, L.J. KRICKA2 AND S.
SURREY1, THOMAS JEFFERSON UNIV. AND 2HOSPITAL OFTHE UNIV. OF
PENNSYLVANIA, USA 352 15:45 F-5-2 BIOLUMINOMETRY BY CMOS-BASED ACTIVE
PIXEL PHOTODIODEARRAY WITH ACCURATE BACKGROUND NOISE COMPENSATION Y.
YAZAWA, M. KAMAHORI AND H. KAMBARA, HITACHI. LTD., JAPAN 354 16:00 F-5-3
DETECTION OFDNA MOLECULES USING INSULATED GATE FIELD EFFECT TRANSISTOR
AND INTERCALATOR T. SAKATA, H. OTSUKA ANDY MIYAHARA, NATIONAL INST,
FORMATERIALS SCIENCE, JAPAN 356 16:15 F-5-4 ELECTROSTATIC IMMOBILIZATION
OF BIOMOLECULES USING NANO-ELECTRODE ARRAY T. YAMAMOTO AND T. FUJII, THE
UNIV. OFTOKYO, JAPAN 358 XXVM 16 30 F-5-5 MICROFLUIDIC DEVICES
INTEGRATED WITH PARMALLOY MICROPATTERNS FOR MANIPULATING MAGNETIC BEADS
N ICHIKAWA .F OMASU2,Y NAGASAKI1 ANDT CH K 2, TOYOUMV ,2PRESTO-1STAND
TOKYO UMV OFSCIENCE LAPAN 360 F-6: MICRO-NANO ELECTROMECHANICAL DEVICES
FOR BIO- AND CHEMICALAPPLICATIONS - MICRO-NANO ELECTRO MECHANICAL
DEVICES FOR BIO- AND CHEMICAL APPLICATIONS - II - (17 00 - 18 00) 17 00
F-6-1 DEVELOPMENT OFAN INTEGRATED A-SI H PHOTODIODE DETECTOI AND ITS
EVALUATION FOR CHEMICAL AND BIOCHEMICAL MICIOFLUIDICANALYSIS (INVITED)
TKARNEI 3,BM PAEGEL ,E T LAGALLY1,A M SKELLEY JR SCHERER1, R A
STIEET2AND RA MATHIES1, UMV OFCALIFORNIA ATBAIKELEY, PALOALTORESEAICH
CENTEI, USA AND 3AIST, JAPAN 362 17 30 F-6-2 RESONANT CAVITY THIN FILM
PHOTODIODE FOR COMPACT DISPLACEMENT SENSOR M SASAKI, F NAKAI, X MI ANDK
HANE, TOHOKU UMV, JAPAN 364 17 45 F-6-3 RF PROPAGATION CHARACTERISTICS
AND PH MEASUREMENT FOR IN VIVO WIRELESS HEALTHCARE CHIP T YAMADA ,H
UESUGI ,K OKADA .K MASU .H NAKASE2,K TSUBOUCHI2,A OKI3 AND Y HORNKE3,
TOKYO INST OFTECHNOLOGY, 2RIEC, TOHOKU UMV AND NATIONAL INST FOI
MATENATS SCIENCE, JAPAN 366 ROOMG G-3: ADVANCED SILICON CIRCUITS AND
SYSTEMS - CIRCUIT TECHNIQUES FOI EMERGING TECHNOLOGIES - (9 00 - 10 30)
9 00 G-3-1 THE CHALLENGE OF ANALOG MIX-MODE INTEGRATED CIRCUIT DESIGN
FOI BRAIN COMPUTER INTERFACE (INVITED) Z WANG,C ZHANG ANDD LI, TSTNGHUA
UNIX , CHINA 368 9 30 G-3-2 THEVISION CHIP WITH ELECTNCAL FOVEA MOTION Y
NAKAGAWA, J DEGUCHI, J -C SHIM,H KUNNO ANDM KOYANAGI, TOHOKUUMV ,JAPAN
370 9 50 G-3-3 APERIODIC COMPARATOR OPERATING AT 80GHZBASED ON
SINGLE-FLUX-QUANTUM TECHNOLOGY WITH HIGH TEMPEIATURE SUPERCONDUCTOR H
SUGIYAMA12, H WAKANA2,S ADACHI2,Y TARUTAM1 ANDK TANABE2, TOSHIBA COIP
AND SUPEICONDUCTIVITY RESEAICH LAB, JAPAN 372 10 10 G-3-4 ULTI A SMALL
RANDOM NUMBER GENERATING CIRCUITS WITHANOVEL NOISE SOURCE DEVICE S
YASUDA,H SATAKE,H NOZAKI,T TANAMOTO,R OHBA,K UCHIDA, A KINOSHITA AND S
FUJITA, TOSHIBA COIP , JAPAN 374 G-4: SYSTEM-LEVEL INTEGRATION AND
PACKAGING TECHNOLOGIES - SYSTEM-LEVEL INTEGRATION AND PACKAGING
TECHNOLOGIES I -(10 45 -12 00) 10 45 G-4-1 3D SYSTEM INTEGRATION BY
CHIP-TO-WAFER STACKING TECHNOLOGIES (INVITED) PRAMM, A KLUMPP,R MERKEL.J
WEBER, R WIELANDANDG EKI.FIAITITHOFEI INST FOI RELIABILITY
ANDMICIOINTEGIATTON GEIMANY 376 11 15 G-4-2 MICRO CU BUMP
INTERCONNECTION ON 3D CHIP STACKINGTECHNOLOGY K TAMDA,M UMEMOLO,N
TANAKA,Y TOMITA ANDK TAKAHASHI.ASFR, JAPAN 378 11 30 G-4-3 COPPER
ELECTRODEPOSITION OF HIGH-ASPECT-RATIO VIAS FOR THREE DIMENSIONAL
PACKAGING K KONDO ,T YONEZAWA .M TOMISAKA2,H YONEMUIA2, M HOSHINO2, Y
TAGUCHI AND K TAKAHASHI2, OKAYAMA UNN AND2ASET,JAPAN 380 11 45 G-4-4L
FABRICATION OFHIGH-DENSITY WIRING INTERPOSER FOR 10GHZ 3D PACKAGING
USING A PHOTOSENSITIVE MULTIBLOCK COPOLYMENZED POLYIMIDE K KIKUCHI ,S
SEGAWA2,E-S JUNG ,Y NEMOTO3, H NAKAGAWA ,K TOKORO ANDM AOYAGI1, AIST,
2PIRESEAICH ANDDEVELOPMENTCO , LTD AND ASET, JAPAN 382 G-5:
SYSTEM-LEVEL INTEGRATION AND PACKAGING TECHNOLOGIES - SYSTEM-LEVEL
INTEGIATION AND PACKAGING TECHNOLOGIES II - (15 15 - 16 45) 15 15 G-5-1
DESIGN, MANUFACTURING AND INFRASTRUCTURE FORALL-IN-ONE SIPSOLUTION
(INVITED) T FUJITSU1, T KATSUMATD1 ANDH KAWAGUCHI2, 1-SIP WALTON COIP
AND2SIMUTOMOBAKEHTE CO , LTD , JAPAN 384 XXIX 15:45 G-5-2 SYSTEM
PACKAGING AND EMBEDDED WLPTECHNOLOGIES FOR MOBILE PRODUCTS (INVITED) T.
WAKABAYASHI, CASIO COMPUTER CO., LTD., JAPAN 386 16:15 G-5-3 EVALUATION
OFHOT-CARRIER HARDNESS AND THICK-FILM FORMATION WITH STPTECHNIQUE FOR
SEAMLESS INTEGRATION TECHNOLOGY N. SATO , N. SHIMOYAMA1, T. KAMEI2, K.
KUDOU2, M. YANO2, H. ISHII1 AND K. MACHIDA , NTT CORP.,
2NTTADVANCEDTECHNOLOGY CORP., JAPAN 388 16:30 G-5-4 NEW PROCESS OF
SELF-ORGANIZED INTERCONNECTION IN PACKAGING BY CONDUCTIVE ADHESIVE WITH
LOW MELTING POINT FILLER K. YASUDA,J.-M. KIM, M. YASUDA AND K. FUJIMOTO,
OSAKA UNIV.,JAJJAN 390 G-6: SYSTEM-LEVEL INTEGRATION AND PACKAGING
TECHNOLOGIES - SYSTEM-LEVEL INTEGRATION AND PACKAGING TECHNOLOGIES
III-(17:00- 18:15) 17:00 G-6-1 AC COUPLED INTERCONNECT FOR HIGH-DENSITY
HIGH-BANDWIDTH PACKAGING (INVITED) P. FRANZON, S. MICK, J. WILSON, L.
LUO AND K. CHANDRASAKHAR,NC STATE UNIV., USA 392 17:30 G-6-2 INTER-CHIP
WIRELESS INTERCONNECTION USING SI INTEGRATED ANTENNA A.B.M.H. RASHID, S.
WATANABE AND T. KIKKAWA, RCNS, HIROSHIMA UNIV., JAPAN 394 17:45 G-6-3
MAGNETIC NEAR-FIELD MAPPINGS OVER FINE CIRCUITS BY FIBER-EDGE
MAGNETO-OPTIC PROBE M. IWANAMI1, S. HOSHINO , M. KISHI2 AND M.
TSUCHIYA2, ASET AND 2THE UNIV. OFTOKYO, JAPAN ...396 18:00 G-6-4
VARIABLERF INDUCTOR ON SI CMOS CHIP S. GOMI , Y.YOKOYAMA , H. SUGAWARA ,
H. ITO , K. OKADA , H. HOSHINO2, H. ONODERA2 AND K. MASU , TOKYO INST,
OFTECHNOLOGYAND2KYOTO UNIV., JAPAN 398 OHGI POSTER SESSION (13:00-15:00)
PI: ADVANCED SILICON CIRCUITS AND SYSTEMS PI -1 BANK-TYPE MULTIPORT
REGISTER FILE FOR HIGHLY-PARALLEL PROCESSORS T. SUEYOSHI .H. UCHIDA1,Y
MITANI2, K. HIRAMATSU2, H.J. MATTAUSCH , T. KOIDE1 ANDT. HIRONAKA2,
RCNS,HIROSHIMA UNIV. AND2HIROSHIMA CITY UNIV., JAPAN 400 PI-2
THREE-DIMENSIONALLY STACKED ANALOG RETINAL PROSTHESIS CHIP J. DEGUCHI,
T. WATANABE, T. NAKAMURA,Y NAKAGAWA, J.-C. SHIM, H. KURINO AND M.
KOYANAGI, TOHOKU UNIV., JAPAN 402 PL-3 LOW-VOLTAGE-TRIGGERED PNP FORESD
PROTECTION IN MIXED-VOLTAGE I/O INTERFACE M.-D. KER1, W.-J. CHANG AND
W.-Y LO2, NATIONAL CHIAO-TUNG UNIV. AND2SILICON INTERGRATEDSYSTEMS
(SIS) CORP., TAIWAN 404 PI-4 75- QUBIT QUANTUMCOMPUTING EMULATOR M.
FUJISHIMA , K. INAI .T. KITASHO AND K. HOH -2, THE UNIV. OFTOKYO
AND2CREST-JST, JAPAN 406 PL-5 EFFICIENT SUPPRESSION OF SUBSTRATE NOISE
COUPLING IN CMOS TECHNOLOGY W.-K. YEH , S.-M. CHEN2, C.-M. LAI2 AND
Y.-K. FANG2, NATIONAL UNIV. OFKAOHSIUNG AND2NATIONAL CHENG KUNG UNIV.,
TAIWAN 408 *PL-6 ALL DIGITAL ONE-CHIP WIRELESS MODEM LSI WITH
ACQUISITION CIRCUIT Y SAKAI, H. NAKASE,Y ISOTA AND K. TSUBOUCHI, RIEC,
TOHOKU UNIV.,JAPAN 410 P2: ADVANCED SILICON DEVICES AND DEVICE PHYSICS
P2-1 EFFICIENTIMPROVEMENT OF HOT-CARRIER-INDUCED DEGRADATION FOR SUB-0.1
P.M CMOSFET C.-M. LAI1, C.-C. HU2, J.-C. LIN3, S.-T. PAN2 AND W.-K.
YEH4, NATIONAL CHENG KUNG UNIV., 2SLW-TE UNIV., 3NATIONAL CLIIAO-TUNG
UNIV. AND4 NATIONAL UNIV. OFKAOLISIUNG, TAIWAN 412 P2-2 OPTIMIZATION
OFSTI STRESS AND ACTIVE GEOMETRY CONFIGURATION FORADVANCED CMOS DEVICES
T. LIN, Y GONG, J.T. TSENG , L. YU, T. SHEN, D. CHEN, T.P. CHEN, C.L.
KUO, W.T. SHIAU, J.K. CHEN, S.C. CHIEN ANDS.W SUN,
UNITEDMICROELECTRONICSCORP., TAIWAN 414 XXX P2-3 MODELING OF POCKET
IMPLANT EFFECT ON DRAIN CURRENT FHCKEI NOISE IN HIGH
PERFORMANCEANALOGCMOS DEVICES J-W WU , J -C GUO2,K -L CHIU1, C -C
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INUISHIANDY OHJI, RENESAS TECLMOLOGY COIP JAPAN 418 P2-5 ANEW STABLE
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ONE-BIPOLAI (1T1B) CAPACITOI-LESSDRAM CELL J -K PARK AND JC S WOO, UMV
OFCALIFOIMA, LOS ANGELES, USA 428 P2-10 ON-CUNENT MODELING OF POLY-SITFT
KC MOON,S -H KANGANDM -K HAN SEOULNATIONAL UMV, KOIEA 430 P2-11
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SPIRAL INDUCTORS WITH 6 U.M THICK TOP-METAL FORRF-IC APPLICATIONS Y-S
LIN1, H -W CHIU2, S -H WU1 AND S -S LU2, NATIONAL CLU NAN UNIX AND
NATIONAL TAIWAN UNA , TAIWAN 432 P2-12 DESIGN ISSUES FOR SUB-LOONM
ANALOGCMOS M GARG,SS SURYAGANDH ANDJCS WOO, UMV OF CALIFORNIA, LOS
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IN SUB 50 NMNMOSFET J YUAN AND J C S WOO,UMV OF CALIFORNIA, LOS ANGELES
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AND THE EFFECT OFSUBSTRATE GROUNDED SHIELDS S -S SONG1, S -W LEE1, J
GIL1 AND H SHIN2, KAISTAND 2SEOULNATIONAL UMV,KOIEA 438 P2-15
IMPROVEMENT ON TURN-ON SPEED OFSUBSTRATE-TRIGGERED SCR DEVICE BY USING
DUMMY-GATE STRUCTURE FOR ON-CHIPESD PROTECTION K -C HSU ANDM -D KER,
NATIONAL CHIAO-LUNG UMV, TAIWAN 440 P2-16 ANEWCONDUCTIVITY
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M -K HAN , SEOULNATIONALUMV AND AJOU UMV, KOIEA AAA P2-18L
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TECHNIQUE S-C WANG,G-W HUANG, S-D WU,A-S PENG ANDM-H
CHO,NATIONALNANODEVICELABS, TAMAN 446 P2-19L IMPROVED MODELINGTECHNIQUE
FOR ON-CHIP SILICON SPIRAL INDUCTORS M -H CHO,G-W HUANG,K -M CHEN, S Y
WEN AND S C WANG,NATIONALNANO DEVICE LABS, TAIWAN 448 P3: SILICON
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NAKANISHI, ELPIDA MEMOIY, INC JAPAN 450 P3-2 VERY HIGH RELIABILITYOF
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SUGAWA AND T OHMF-, TOHOKU UMV AND NICHE, TOLWKU UMV JAPAN 452 XXXI
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PLASMA M OOKAANDS YOKOYAMA, RCNS, HUOSHIMAUMV , JAPAN 454 P3-4
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CU INTERCONNECTIONS Z WANG, O YAEGASHI , H SAKAUE, T TAKAHAGI AND S
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HYDIOGEN-TERMINATED SI(L 10) SUBSTIATE FOR NEXT GENERATION ULSI DEVICES
H AKAHON ,K NN1, A TERAMOTO ,S SUGAWA2ANDT OHMI1, NICHE TOHOKUUMV AND
2TOHOKU UMV, JAPAN 458 P3-6 AN INTEGRATED GATE STACK PROCESS FOI
SUB-90NMCMOS TECHNOLOGY SJ CHANG, S Y WU,C L CHEN.TL LEE,YM LIN,YS
TSAI,H D SU,SB CHEN.YS CHEN, MS LIANG,YC SEEANDYC SUN, TAIWAN
SEMICONDUCTOI MANUFACTUIMG COMPANY, TAIWAN 460 P3-7 PIECUISORS FOR
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CHO ,CC YEO .SJ WHOANG2, S MATTHEW1, L K BEIA1,N BALASUBIAMAMAN3 AND D
-L KWONG4, NATIONAL UNIX OFSMQAPOIE SINGAPOIE 2IUSUNG ENGMEEIUIG CO ,
LTD , KOIEA 3LNST OFMICIOELECTIONICS, SINGAPOIE AND4 THE UMV OFTEXAS
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ISODA .K SASATA ,T YOKOSUKA1,A ENDOU ,M KUBO .A IMAMURA2 ANDA
MIYAMOTO11, TOHOKUUMV, 2HUOSLUMA KOKUSAI GAKUIN UMV AND3NICHE, TOHOKU
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DIELECTI IC FILM S KUIOKI1,T HNOTA2 ANDT KIKKAWA1, RCNS, HUOSHIMA UNIX
AND21AZM0 CO , LTD , JAPAN 468 P3-11 INCIEASE
OFCIYSTALLIZATIONTEMPEIATURES OF ULTIATHM A1,03 FILMS CAUSED BY SI
DIFFUSION DUNNGANNEALING S MIGITA:,JW PAIK2,T YASUDA1,M NISHIZAWA R
KUSE2,T NABATAME2 ANDA TONUMI1 MIRAL-AIST.AIST2MIRAI-ASET,AISTAND THE
UMV OFTOKYO LAPAN 470 P3-12 NEUTIAL BEAM ETCHING FOI DAMAGE-FIEE 50 NM
GATE ELECTIODE PATTERNING S NODA12, H NISHIMON2,T IDA2,T ANKADO2,K
ICHIKI1 AND S SAMUKAWA1, LOHOKU UMV. 2SELETE AND EBAIA RESEAICH CO ,
LTD JAPAN 472 P3-I3 DEFECT GENERATION IN GALE OXIDE BY SELECTIVE
OXIDATION IN HYDIOGEN-RICH WETAMBIENT H-J CHO, K -Y LIM, S -A JANG, J-H
LEE, J-G OH,Y-S KIM, H-S YANG AND H-C SOHN, HYNT SEMICONDUC TOI INC ,
KOI EA A1A P3-14 IMPROVING ELECTRICAL PROPEITIES OFCVD HF02 BY
MULTI-STEP DEPOSITION AND ANNEALING IN A GATE CLUSTER TOOL CC YEO ,BJ
CHO1,MS JOO .SJ WHOANG2, D-L KWONG1, LK BERA4, S MATHEW1 AND N
BALASUBRAMAMAN4, NATIONAL UMV OFSINGAPOIE, SINGAPOIE, 2JUSUNGENGMEENNG
CO , LTD , KOIEA, THEUMV OFTEXAS ATAUSTIN, USA AND4 INSTS
OFMICIOELECTIONICS SINGAPOIE ALB P3-15 INFLUENCE OFHUMIDITY ON
ELECTRICAL CHARACTERISTICS OF POROUS SILICA FILMS S SAKAMOTO, S KUROKI
ANDT KIKKAWA, RCNS, HUOSHIMA UMV, JAPAN 478 P3-16 CHEMICAL STRUCTURE OFN
ATOMS IN THETRANSITION REGION OF THE SIO(N)/SI INTERFACE ANEW
SPECTROSCOPIC METHOD WITH HYDIOGENATION REACTION IN HFACID N MIZUTA AND
S WATANABE, FUJITSU LABS LTD , JAPAN 480 P3-17 THE SHEET RESISTANCE
INSTABILITY IN THE SUB-100 NM TUNGSTEN POLY-METAL WOIDHNE DUE TO AN
IN-SITUNH3 PRE-ANNEALING DURING THE SEALING NITNDE DEPOSITION K -Y LIM,
J -H LEE,H -J CHO, J -G OH, B -S HONG, S -A JANG, Y-S KIM, H -S YANG AND
H-C SOHN, HYNIA SEMICONDUCTOI INC , KOIEA 482 P3-18 INFLUENCE OF
INTERFACE LAYERS AND BOTTOM ELECTIODES ON (BA,SI)TI03 THIN FILM LEAKAGE
CUIIENT M YAMATO, H YAMADA AND T KIKKAWA, RCNS, HUOSHIMA UMV , JAPAN 484
P3-19 INTERFACE OXIDATION MECHANISM IN IIFO:/SIHCON SYSTEM WITH
POST-DEPOSITION ANNEALING H SHIMIZU,M SASAGAWA,K KITA, K KYUNOANDA
TONUMI, THE UMV OFTOKYO, JAPAN 486 P3-20L A NOVEL PIOCESS FOROXYMTNDE BY
POST-OXIDATION OF NH3 PLASMA NITNDATION C S LAI ANDK M FAN, CHANG GUNG
UMV, TAIWAN 488 P3-21L ONGIN OF INTEIFACIAL REACTION CONSTANT FOR SI
THEIMAL OXIDATION T AKIYAMA12 ANDH KAGESHIMA1, NTTCOIP AND 2MIE UMV,
JAPAN 490 XXXU P4:NEWMATERIALSAND CHARACTERIZATION P4-1 IMPROVING
THEACCUIACY OFMODIFIED SHIFT-AND-RATIO CHANNEL LENGTH EXTIACTION METHOD
USINGSCANNING CAPACITANCE MICIOSCOPY C-W ENG 2,W-S LAU ,Y.-Y JIANG1, D
VIGAI2,K-C TEE2 L CHAN2,VS-W LIM3ANDA TRIGG1, NANYANG
TECHNOLOGICALUMV,2CHAITEIEDSEMICONDUCTOI MANUFACTUNNG LTD AND3LNST OF
MICIOELECTIONICS, SINGAPOIE 492 P4-2 INFLUENCE OF NITROGENPIOFILE ON
METAL WORKFUNCTION IN MO/SI02/SI MOS STRUCTURE M HINO, T AMADA,N MAEDA
ANDK SHIBAHARA, RCNS, HUOSHIMA UNN , JAPAN 494 P4-3 COMPACT ELECTRICAL
CHARACTERIZATION OF NANO-CMOS TRANSISTOR WITH 1 2NM ULTRATHIN GATE
DIELECTRIC HS KANG .W-YQUAN2,KS KIM1,C B OH ,HJ RYU .CK BAEK2,B KIM2,YW
KIM1, K P SUH1 ANDDM KIM2, SAMSUNG ELEC TIOMES AND 2KOIEA INST FOI
ADVANCED STUDY, KENEA 496 P4-4 CROSS-HATCH RELATED OXIDATION AND
RELIABILITY OF GATE OXIDE OFSTRAINED-SI/SIGE M NISHISAKA ANDT ASANO,
KYUSHU INST OFTECHNOLOGY, JAPAN 498 P4-5 VISIBLE LIGHT II RADIATION
EFFECTS ON ATOMIC-SCALE OBSERVATIONS OF HYDROGENATED AMORPHOUS SILICON
FILMS BY SCANNINGTUNNELING MICROSCOPY K ANMA,H KAKIUCHI, M IKEDA, K
ENDO, M MONTAANDY MORI, OSAKA UMV, JAPAN 500 P4-6 INFLUENCE OF
STRUCTURAL VARIATION OFNI SIHCIDETHIN FILMS ON ELECTRICAL PROPERTY FOR
CONTACT MATERIALS K OKUBO, Y TSUCHIYA, 0 NAKATSUKA,A SAKAI.S ZAIMA ANDY
YASUDA, NAGOYA UMV, JAPAN 502 P4-7 ULTRA-SHALLOW BOION PROFILE FITTING
COMPENSATING FOR SURFACE CONTAMINATION BY UTILIZING GENETIC ALGORITHMS M
MURAKAWA1, K SHIBAHARA2,Y ODA3, T HIGUCHI1 ANDK NISLN3, MIRAI
ASRC,AIST, 2RCNS, HUOSHIMAUMV AND 3SELETE, JAPAN 504 P4-8
NUCLEATION-CONTROL IN SOLID-PHASE-CRYSTALLIZATION OFA-SI/SI02 BY LOCAL
GE INSERTION I TSUNODA ,K NAGATOMO ,A KENJO ,T SADOH ,S YAMAGUCHI2 ANDM
MIYAO , KYUSHU UMV AND 2HITACJII LTD , JAPAN 506 P4-9
ATOMIC-SCALEADSORBENT STIUCTUIE OFCONTAMINANT METAL ON SI(100) SURFACE
AND ITS EFFECT ONTHEIMAL OXIDATION T OMZAWA T NAIUSHIMA 34, K
MIKI 3ANDK YAMABE2, NRI,AIST, UMV OFTSIIKUBA 3NML,NIMS, JAPAN AND
4TIIMTY COLLEGEDUBLIN, LIELAND 508 P4-10 EFFECT OFVACUUMANNEALING
ONHIGH-K DY,03THIN FILMS DEPOSITED ON SI(100) S OHMI, H YAMAMOTO, J
TAGUCHI, K TSUTSUI AND H IWAI, TOKYO INST OFTECHNOLOGY, JAPAN 510 P4-11
FOTMATION OF STRAINED (3-FESI2(GE) BY GE-SEGREGATION CONTROLLED
SOLID-PHASE GROWTH OF [AMORPHOUS SI/ FESIGE]N MULTI-LAYERED STIUCTURE T
SADOH,M OWATAN.Y MURAKAMI,A KENJO,T YOSHITAKE,M ITAKURA ANDM MIYAO,
KYUSHU UMV, JAPAN 512 P4-12 ELECTRICAL PROPERTIES OF CRYSTALLINE Y-A1,03
FILMS USING CONDUCTIVE-AFM AND MISFETS WITH ALUMINUM GATES T OKADA,R
ITO,M SHAHJAHAN,K SAWADA ANDM ISHIDA, TOYOHASHIUMV OFTECHNOLOGY JAPAN
514 P4-13 WET ETCHING CHARACTERISTICS OF BOTHAS-DEPOSITED ANDANNEALED
AL.,0, AND HFA10X FILMS T NISHIMUIA ,R KUSE2,K TOMINAGA2,T NABATAME2ANDA
TORIUMI 1, MIRAI ASRC,AIST, MIRAI- ASET,AISTAND3THE UMV OFTOKYO, JAPAN
516 P4-14 IMPACT OFTI/TIN (GLUE/BARNEI LAYER) FOTMATION ON ULTRA-THIN
GATE OXIDE RELIABILITY (HCI AND NBTI) FOR DEEP SUB-MICRON CMOS
TIANSISTORS CH LIU.MG CHEN.YR YANG ANDYT LOH, UNITED MICIOELECTIONICS
COIP (UMC), TAIWAN . 518 P4-15 CHARACTERIZATION AND COMPARISON
OFSTRAINED SI,^ MOSFETGROWN BY GASSOURCEMBE ANDHOTWIRE CELL METHOD T
WATAHIKI ,K ABE2, A YAMADA1 ANDM KONAGAI1, TOKYO INST OFTECHNOLOGY
AND SHMSHU UMV, JAPAN * 520 P4-16 EFFECT OFNITROGENANNEALING ON THE
ELECTRICAL PROPERTIES OF ULTRATHIN CRYSTALLINE Y-A1203 HIGH-K DIELECTRIC
FILMS DEPOSITED ON SI(LLL) SUBSTRATES M SHAHJAHAN,T OKADA,K SAWADA AND M
ISHIDA, TOYOHASHI UMV OFTECHNOLOGY, JAPAN 522 P4-17 ELECTRICAL
PROPERTIES AND CONDUCTION MECHANISM OFZR02 FILMS ON SI, YC; GK
DALAPATI .SK SAMANTA1, S CHATTERJEE1,PK BOSE2,S VARMA S PATIPANDCK
MAITI1, I1TKHAIAGPMRJADAVPUI UMV AND3LNST OFPHYSICS, BHUBANESWAI, INDIA
524 XXXIN P4-18 FAILURE MECHANISM OFNANO-CRYSLALLINEVN BARRIER IN
CU/VN/SI02/SI SYSTEM T. ITOI2, 0. YANADA3, K. SATOH4, M.B. TAKEYAMA1 AND
A. NOYA1, KITAMI INST, OFTECHNOLOGY, 2CHIBA UNIV., SEC LTD. AND4
HITACHI KOKUSAI ELECTRIC INC., JAPAN 526 P4-19L NEAR-FIELD RAMAN
MICROSCOPY OF SI AND SI-BASED STRUCTURES USING AFM-TIP-INDUCED BREAKING
OF SELECTION RULES V. POBORCHII, T. TADA AND T. KANAYAMA,
M1RAI-ASRC,AIST, JAPAN 528 P5: COMPOUND SEMICONDUCTOR MATERIALS AND
DEVICES P5-1 METAL-SEMICONDUCTOR-METAL UV PHOTODETECTOR BASED ON
AIGAN/GAN HETEROSTRUCTURE H. JIANG, T. EGAWA, H. ISHIKAWA,Y DOU, C. SHAO
ANDT. JIMBO, NAGOYA INST, OFTECHNOLOGY, JAPAN ... 530 P5-2 LOW FREQUENCY
NOISE CAUSED BY SUBSTRATE CURRENT IN ALGAAS/INGAAS HEMTS M. WADA, S.
NISHIYAMA, T. NAKAMOTO AND K. HIGUCHL, HIROSHIMA UNIV., JAPAN 532 P5-3
ELECTRO STATICDISCHARGE EFFECTS ON AIGAN/GANHEMTS ON SAPPHIRE SUBSTRATES
S.-C. LEE, J.-C. HER, K.-S. SEO AND M.-K. HAN, SEOUL NATIONAL UNIV.,
KOREA 534 P5-4 STUDY OFINGAP/INGAAS DOUBLE DOPED CHANNEL HETEROSTRUCTURE
FIELD-EFFECT TRANSISTOR (DDCHFET) H.-M. CHUANG, C.-Y CHEN, P.-H. LAI,
S.-I. FU, Y.-Y. TSAI, C.-I. KAO AND W.-C. LIU, NATIONAL CLIENG- KUNG
UNIV., TAIWAN 536 P5-5 NITRIDE-BASED BLUE LEDS WITH GAN/SIN DOUBLE
BUFFER LAYERS C.-H. KUO -3, S.-J. CHANG , Y.-K. SU1, C.-K. WANG , L.-W.
WU1-3, J.-K. SHEU2 AND J.-M. TSAI3, NATIONAL CHENG KUNG UNIV.,
-NATIONAL CENTRAL UNIV. AND3SOUTH EPITAXY CORP., TAIWAN 538 P5-6
THERMAL ANNEALING EFFECT IN GALNNAS THIN FILMS ESTIMATED BY X-RAY
ABSORPTION FINE STRUCTURE SPECTROSCOPY K. UNO1, M. YAMADA1, T. TAKIZAWA2
AND I. TANAKA1, WAKAYAMA UNIV. AND2MATSUSHITA ELECTRIC INCL. CO.,
LTD..JAPAN 540 P5-7 A DOUBLE-BARRIER-EMITTER TRIANGULAR BARRIER
OPTOELECTRONIC SWITCH J.-Y CHEN1, D.-F GUO2, K.-M. LEE1, H.-M. CHUANG1,
C.-Y CHEN1 AND W.-C. LIU1, NATIONAL CLIENG- KUNG UNIX1, AND 2CHINESE
AIR FORCEACADEMY, TAIWAN 542 P5-8 GAAS-MISFETS WITH NM-THIN GATE
INSULATING FILMS FORMED BY OXI-NITRIDALION PROCESS M. TAKEBE, N.C. PAUL,
K. NAKAMURA, K. LIYAMA AND S. TAKAMIYA, KANCUAWA UNIV.,JAPAN 544 P5-9
CHARACTERIZATION OFTHREADING DISLOCATION IN SI-DOPEDGAN FILMS BY HIGH
SPATIAL RESOLUTION CATHODOLUMINESCENCE SPECTROSCOPY R. SUGIE , M.
YOSHIKAWA AND H. HARIMA2, TORAY RESEARCH CENTER INC. AND2KYOTO INST,
OF TECHNOLOGY, JAPAN 546 P5-10 CHARACTERIZATION OFALINASSB/GALNASSB
MULTIPLE QUANTUM WELLS GROWN BY MOVPE Y.-K. SU1, C.-H. WU1 AND J.-R.
CHANG2, NATIONAL CHENG KUNG UNIV. AND2EPISTAR CORP., TAIWAN 548 P5-11
GROWTH TEMPERATURE DEPENDENCE OFNITROGEN INCORPORATION INGANAS GROWN BY
CHEMICAL BEAM EPITAXY Y. SUN, M. YAMAMORI, T. EGAWA AND H. ISHIKAWA,
NAGOYA INST, OFTECHNOLOGY, JAPAN 550 P5-12 AL-DOPED ZNO INTERMEDIATE
LAYER FOR AIGAN/GANHEMT OHMIC CONTACT K. NISHIZONO, M. OKADA, M. KAMEI,
D. KIKUTA, J.P. AO, K. TOMINAGA ANDY OHNO, TJ E UNIV. OF TOKUSHIMA,
JAPAN 552 P6: OPTOELECTRONIC DEVICES AND PHOTONIC CRYSTAL DEVICES P6-1
INVESTIGATION OFNONRECIPROCAL PHASE SHIFT CHARACTERISTICS FOR INTEGRATED
OPTICAL WAVEGUIDE ISOLATORS UTILIZING MAGNETIC PHOTONIC CRYSTALS J.S.
YANG1, G. LEE , T.H. LEE , Y-I. KIM1, M.C. PARK1, YT. BYUN , D.H. WOO1,
S. LEE1, S.H. SONG2 AND S.H. KIM1, KISTAND -HANYANG UNIV., KOREA 554
P6-2 MAGNETOOPTIC SPATIAL LIGHT MODULATOR WITH ONE-STEP PATTERN GROWTH
ON ION-MILLED SUBSTRATES BY LIQUID-PHASE EPITAXY J.-H. PARK -3, J.-K.
CHO2, K. NISHIMURA1, H. UCHIDA AND M. INOUE -4, TOYOHASHI UNIV.
OFTECHNOLOGY, JAPAN, 2GYEONGSANG NATIONAL UNIV., KOREA, - ASTF AND4
CREST-JST, JAPAN 556 P6-3 OPTICAL PROPERTIES OFACRYLATE-BASED
NEGATIVE-TYPE PHOTORESIST AND FABRICATION OF OPTICAL WAVEGUIDES P.
GUSTAFIK1, 0. SUGIHARA2 AND N. OKAMOTO1, SHIZUOKA UNIV. AND 2TOHOKU
UNIV.,JAPAN 558 P6-4 OPTICALLY TUNING OFDEFECT-INDUCED PASS-BAND IN
PHOTONIC CRYSTAL WAVEGUIDE M. TSUJI,Y IIDA AND Y OMURA, KANSAI UNIV.,
JAPAN 560 XXXIV P6-5 NUMERICALANALYSIS OFWAVEGUIDES IN THREE-DIMENSIONAL
PHOTONICCRYSTAL WITH FINITE THICKNESS Y. WATANABE , N. YAMAMOTO1-2 AND
K. KOMORI1, AISTAND2CREST-.IST, JAPAN 562 P6-6 FABRICATION OFWIDE AREA
TWO-DIMENSIONAL PHOTONIC CRYSTAL USING HOLOGRAPHIC LITHOGRAPHY J.I.
MOON, S.H. KIM, S.H. PARK AND Y.T. LEE, KWANGJU INST, OFSCIENCE
TECLMOLOGY, KOREA 564 P6-7 ASTUDY OF MAGNETOSTRICTION AND
ITSAPPLICATIONS TO SILICON-ON-INSULATOR WAVEGUIDES PS. CHAN AND H.K.
TSANG, THE CHINESE UNIV. OFHONGKONG, HONG KONG 566 P6-8 BLUE
LUMINESCENCE OF POROUS ALUMINA MEMBRANES PREPARED BYANODIC OXIDATION T.
ECHIZENYA, K. TAKASE, Y. TAKAHASHI, Y. TAKANO AND K. SEKIZAWA, NIHON
UNIV., JAPAN 568 P6-9 ALGAAS/INGAAS DFB LASERBY ONETIME SELECTIVEMOCVD
GROWTH ON A GRATING SUBSTRATE Y TAKASUKA -2, K. YONEI2, H. YAMAUCHI1 AND
M. OGURA1, AISTAND2SHIBAURA INST, OFTECHNOLOGY, JAPAN ... 570 P6-10
INGAN/GAN LIGHT EMITTING DIODES WITH A LATERAL CURRENT BLOCKING
STRUCTURE W.-B. CHEN1, Y.-K. SU , C-L. LIN1, H.-C. WANG AND S.-M.
CHEN2, NATIONAL CHENG KUNG UNIV. AND 2EPITECH TECHNOLOGY CORP., TAIWAN
572 P6-11 CHARACTERISTICS OFP-I-I-I-N GAAS/AL035GA065AS PHASE MODULATOR
AND MULTIMODE INTERFERENCE USED IN THE TE/TM MODE SPLITTER S.-P. KIM1,
J.-M. SON1, S.-S. LEE , S. LEE2, D.-H. WOO2 AND S.-H. KIM2, HANYANG
UNIV. AND 2KOREA INST, OFSCIENCE ANDTECHNOLOGY, KOREA 574 P6-12 SURFACE
PLASMON RESONANCE AND EMISSION LIGHT PROPERTIES OF POLYSTYRENE SPHERE
THIN FILMS K. SHINBO, S. MIYABAYASHI, K. YOSHIZAWA, H. SHIRASAWA, K.
KATO AND F. KANEKO, NIIGATA UNIV., JAPAN ....576 P6-13 ENHANCED
FREQUENCY RESPONSEASSOCIATED WITH NEGATIVE PHOTOCONDUCTANCE IN AN
INGAAS/INALAS AVALANCHEPHOTODETECTOR G. KIM, I.G. KIM, J.H. BAEK AND
O.K. KWON, ELECTRONICS AND TELECOMMUNICATION RESEARCH INST., KOREA 578
P6-14 THE CHARACTERISTIC OFINGAN/GAN MULTIPLE-QUANTUM-WELL
METAL-INSULATOR-SEMICONDUCTOR PHOTODIODES USING SIO, FABRICATED BY
PHOTOCHEMICAL VAPOR DEPOSITION P.C. CHANG1, C.H. CHEN2, S.J. CHANG1,
Y.K. SU , P.C. CHEN , YD. JHOU1, H. HUNG1, S.L. WU2 AND K.C. HUANG2,
NATIONAL CHENG KUNG UNIV. AND2CHENG-SHIU INST, OFTECHNOLOGY, TAIWAN 580
P7: NOVEL DEVICES, PHYSICS AND FABRICATION P7-1 NOVEL COMB-TYPE
DIFFERENTIAL PRESSURE SENSOR WITH SILICON BEAMS EMBEDDED IN A SILICONE
RUBBER MEMBRANE C.T. SEO, J.K. SHIN AND J.H. LEE, KYUNGPOOKNATIONAL
UNIV., KOREA 582 P7-2 PERIODIC COULOMB OSCILLATION IN HIGHLY DOPED SI
SINGLE-ELECTRON TRANSISTOR T. KITADE, K. OHKURA ANDA. NAKAJIMA, RCNS,
HIROSHIMA UNIV., JAPAN 584 P7-3 ACTIVE PIXEL SENSOR USING AN SOIMOSFET
PHOTODETECTOR WITH A QUANTUM WIRE J.-H. PARK , S.-H. SEO , I.-S. WANG ,
J.-H. KIM , J.-K. SHIN1, P. CHOI1, Y.-C. JO2 AND H. KIM2, KYUNGPOOK
NATIONAL UNIV. AND -KOREAELECTRONICS TECHNOLOGY INST., KOREA 586 P7-4
SIDE GATING PHENOMENON IN GAAS QUANTUM WIRE TRANSISTORS R. JIA , S.
KASAI AND H. HASEGAWA, RCIQE, HOKKAIDO UNIV., JAPAN 588 P7-5 OBSERVATION
OF CURRENT MODULATION IN SAM-FET FABRICATED BY AN AIR-BRIDGE STRUCTURE
K. SASAO, Y. AZUMA, N. KANEDA, E. HASE,Y MIYAMOTO AND Y. MAJIMA, TOKYO
INST, OFTECHNOLOGY,JAPAN....590 P7-6 GENERATION OFLOCAL MAGNETIC FIELD
BY NANO ELECTRO-MAGNETS H.K. KIM1-2, S.H. HONG , B.C. KIM , J.S. HWANG2,
S.W HWANG -2 AND D. ANN2, KOREA UNIV. AND -UNIV. OFSEOUL, KOREA 592
P7-7 ATOMIC-SCALE SMOOTHING AND STRUCTURAL ANALYSIS OF LINB03 SURFACE A.
SAITO1-2, H. MATSUMOTO , S. OHNISI1, M.AKAI-KASAYA ,Y KUWAHARA -2 AND M.
AONO -3, OSAKA UNIV., 2RIKENAND3NATIONAL INST,FORMATERIALS SCIENCE,
JAPAN 594 P7-8 ELECTRON TRANSPORT IN MOLECULARENAMEL WIRES R.V
BELOSLUDOV, A.A. FARAJIAN, H. MIZUSEKI, K. ICHINOSEKI ANDY KAWAZOE,
TOHOKU UNIV.,JAPAN ... 596 P8: QUANTUM NANOSTRUCTURE DEVICESAND PHYSICS
P8-1 SPIN DEPOLARIZATION VIATUNNELING EFFECTS INASYMMETRIC DOUBLE
QUANTUM DOT STRUCTURE H. SASAKURA , S. ADACHI1, S. MUTO , H. SONG2,T.
MIYAZAWA2 ANDT. USUKI2, HOKKAIDO UNIV. AND CREST-JSTAND 2FUJITSU LABS
LTD., JAPAN 598 XXXV P8-2 MECHANICAL PROPERTIES OFNANOMETER-SIZED CU
CONTACTS T. KIZUKA1, M. MORI1, S. FUJISAWA2 ANDA. YABE2, UNIV.
OFTSUKUBA AND2AIST, JAPAN 600 P8-3 A STUDY ON DOPING DENSITY IN
INAS/GAAS QUANTUM DOT INFRARED PHOTODETECTOR U.H. LEE , YH. KANG1, J.H.
OUM , S.-J. LEE2, M. KIM2, S.K. NOH2, YD. JANG3, D. LEE3 AND S. HONG1,
KAIST, -KOREA RESEARCH INST, OFSTANDARDS AND SCIENCE AND CHUNGNAM
NATIONAL UNIV., KOREA 602 P8-4 ENHANCED OPTICAL PROPERTIES OF HIGH
DENSITY ( 10 /CNR) INAS/ALAS QUANTUM DOTS BY USING HYDROGEN PASSIVATION
S.-K. PARK1, J. TATEBAYASHI1, Y.J. PARK2 AND Y ARAKAWA1, RCASTAND IIS,
THE UNIV. OFTOKYO, JAPAN AND2KOREA INST, OFSCIENCE ANDTECHNOLOGY, KOREA
604 P8-5 CONTROLLING THE OPTICAL PROPERTIES OF SELF-ASSEMBLED INAS
QUANTUM DOTS BY VARIOUS ANNEALING TREATMENTS J.-J. YOON , S.-I. JUNG1,
H. CHOI1, J.W. LEE1, G.S. CHO1, M.H. JEON1, J.-Y LCEM1, D.Y. LEE2, J.S.
KIM1, J.S. SON4, S.I. BAN1, J.I. LEE5 AND J.S. KIM6, INJE UNIV.,
2YEUNGNANI UNIV., KOREA, JNIMS, JAPAN, 4KYUNGWOON UNIV., SKRISS
AND6ETRI, KOREA 606 P8-6 CONTROL OFGASB/GAAS QUANTUM NANOSTRUCTURES BY
MOLECULARBEAM EPITAXY T. NAKAI, S. IWASAKI AND K. YAMAGUCHI, THE UNIV.
OFELECTRO-COMMUNICATIONS,JAPAN 608 P8-7 FORMATION OFGE QUANTUM DOTS BY
SELECTIVE OXIDATION OFSIGE ALLOYS FOR SINGLE-ELECTRON DEVICES P.W.
LI1,W.M. LIAO1, S.W. LIN , PS. CHEN2 AND M.J. TSAI2, NATIONAL CENTRAL
UNIV. AND 2ITRL, TAIWAN 610 P8-8 INVESTIGATION OF ULTRAFASL CARRIER
DYNAMICS IN QUANTUM WIRE BY TERAHERTZ SPECTROSCOPY I. MOROHASHI 2, K.
KOMORI -2,T. HIDAKA3, X.L. WANG , M. OGURA1 AND M. WATANABE1, AIST,
-CREST- JSTAND- SHONAN INST, OFTECHNOLOGY, JAPAN 612 P8-9 INFLUENCE OF
DEEP-LEVEL CONCENTRATIONS ON STRONG RED PHOTOLUMINESCENCE FROM
NANO-POROUS SILICON FORMED ON FE-CONTAMINATED SILICON SUBSTRATE D.-Y.
LEE1, J.-W PARK1, S.-S. CHOI1, D.-H. KIM1,1.-H. BAE1, J.-Y. LEEM2, J.-S.
KIM3, S.-K. KANG4, J.-S. SON5, AND I.-S. KIM5, YEUNGNAM UNIV., 2INJE
UNIV., KOREA, NIMS, JAPAN, 4KYUNGHEE UNIV. AND KYUNGWOON UNIV., KOREA
614 P8-10 IDENTIFICATION OFVALENCE-BAND ORDERING IN ZNO BY USING
FOUR-WAVE MIXING S.ADACHI1, S. MUTO , K. HAZU2, T. SOTA2, K. SUZUKI2,
SF. CHICHIBU3, G. CANTWELL4, D.B. EASON4, D.C. REYNOLDS5 ANDC.W LITTON5,
HOKKAIDO UNIV., 2WASEDA UNIV., - UNIV. OFTSUKUBA, JAPAN, 4EAGLE- PICHER
IND. AND WRIGHT-PATTERSON AIRFORCE BASE, USA 616 P8-11L DEMONSTRATION
OFENHANCED TUNNELING MAGNETO RESISTANCE RATIO FOR A MAGNETIC TUNNEL
JUNCTION CONNECTED IN PARALLEL WITH A TUNNEL DIODE T. UEMURA, S.
HONMA,T. MARUKAME AND M. YAMATNOTO, HOKKAIDO UNIX:, JAPAN 618 P9:
SILICON-ON-INSULATOR TECHNOLOGIES P9-I SOISRAM /DRAM CELLS FOR0.5 VOLT
OPERATION M. TERAUCHI, HIROSHIMA CITY UNIV., JAPAN 620 P9-2 A COMPLETE
SURFACE-POTENTIAL-BASED SOI-MOSFET MODEL FOR CIRCUIT SIMULATION D.
KITAMARU,Y UETSUJI AND M. MIURA-MATTAUSCH, HIROSHIMA UNIV., JAPAN 622
P9-3 COMPLEMENTARY OPERATION OF SCHOTTKY SOURCE/DRAIN SOI MOSFET WITH
SHALLOW DOPED EXTENSION S. MATSUMOTO, M. NISHISAKA ANDT. ASANO, KYUSHU
INST, OFTECHNOLOGY, JAPAN 624 P9-4 AWORKABLE USE OF FLOATING-BODYSOS
MOSFET AS A TRANSCONDUCTANCE MIXER S. LAM, A.C.-K. CHAN, W.-K. LEE,
P.K.T. MOK, P.K. KO AND M. CHAN, HONG KONG UNIV. OFSCIENCE AND
TECHNOLOGY, HONG KONG 626 P9-5 THRESHOLD VOLTAGE CONTROL ON THE
BODY-TIED FINFET(OMEGAMOSFET) H.J. JO , T. PARK2, J.D. CHOE1, S.Y HAN1,
J.H. JEONG1, M.C. CHAE1, D. PARK1, K. KIM1, E. YOON2 AND J.-H. LEE3,
SAMSUNG ELECTRONICS CO., LTD., 2SEOULNATIONAL UNIV. AND KYUNGPOOK
NATIONAL UNIV., KOREA 628 P9-6 HIGH PERFORMANCE BURIED GATE SURROUNDING
GATETRANSISTOR (BG-SGT) FOR FUTURE THREE-DIMENSIONAL DEVICES M. IWAI,Y
YAMAMOTO, R. NISHI, H. SAKURABA, T. ENDOH AND F. MASUOKA, RIEC, TOHOKU
UNIV., JAPAN.... 630 P9-7 THERMAL CONDUCTIVITY OF HIGH-INTEGRITY
NANOMETER BURIED OXIDES BYSIMOX Y DONG1, X. WANG1, J. CHEN1, M. CHEN1-2,
X. WANG1-2, P. HE3, L. TIAN3 AND Z. LI3, SIMTT, CLIINESE ACADEMY
OFSCIENCES, -SHANGHAI SIMGUI TECHNOLOGY CO., LTD. ANDJTSINGHUA UNIV.,
CHINA 632 XXXVI P9-8 LOW-FREQUENCY NOISE IN PARTIALLY-DEPLETEDSOI
MOSFETS OPERATING FROM LINEARREGION TO SATURATION REGION AT VARIOUS
TEMPERATURES K-M CHEN1,H -H HU2,G-W HUANG , S -Y HUANG2, A S PENG ,W-K
YEH1 AND C -Y CHANG2, NATIONALNANODEVICE LABS, NATIONAL CHIAO TUNG
UNIX AND NATIONALUMV OFKUOHSIUNQ TAIWAN 634 P9-9L PATTERNED SIMOX SOI
MATERIALS WITH HIGH DEGREE OFSURFACE PLANANTY AND LOW DEFECT DENSITY
YDONG ,X WANG 1,M CHEN 2, J CHEN1, X WANG W YI 3, B JIN ANDE ZHANG ,
SIM1T, CHINESEACADEMY OFSCIENCES, 2SHANGLIAI SIMGUI TECHNOLOGY CO LTD
AND GIATE SEMICONDUCTOI MANUFACTUIING COIP , CHINA 636 P9-10L A
SURFACE-POTENTIAL-BASED CYLINDRICAL SURROUNDING-GATE MOSFET MODEL S
AMAKAWA .K NAKAZATO2ANDH MIZUTA2, UMV OFCAMBIIDQE AND2HITACHI
CAMBIIDGELAB, UK 638 P10: NON-VOLATILEMEMORY TECHNOLOGIES P10-1
IMPROVEMENT OF DATARETENTION IN FLOATING GATE FLASH EEPROM S WITH
P-DOPED FLOATING GATE BC WU ,HWTSAI , SS CHUNG , CJ LIN2,D S KUO1 ANDM S
LIANG2, NATIONAL CHIAOTUNG UMV 2TAIWANSEMICONDUCTOI MANUFAC TINING
COMPANY, SC WNCE BASEDINDUSTI LALPENK TAIWAN AND 3NE FLASH INC USA 640
P10-2 NEW THREE DIMENSIONAL HIGH DENSITY S-SGT FLASH MEMORY ARCHITECTURE
USING SELF-ALIGNED INTEICONNECTION FABRICATINGTECHNOLOGY WITHOUT PHOTO
LITHOGRAPHY PROCESS FORTERA BITS AND BEYOND H SAKURABA .K KINOSHITA1,T
TANIGAMI2,T YOKOYAMA1, S HORU .M SAITOH1, K SAKIYAMA2, T ENDOH ANDF
MASUOKA1, RIEC, TOHOKUUMV AND SHAIP COIP ,JAPAN 642 PI0-3 THE IMPACT
OFTECHNOLOGY PAIAMETERS AND SCALING ON THE PROGRAMMING PERFORMANCE AND
DRAM DISTURB IN CHISELFLASHEEPROMS DR NAIR .NR MOHAPATRA1, S MAHAPATRA
AND S SHUKURR, INDIAN INST OFTECHNOLOGY INDIA AND 2HITACHI LTD , JAPAN
644 P10-4 KEY TECHNOLOGIES OF FIRST CHAIN -32MBIT FERROELECTRICRAM T
OZAKI N NAGEL2, Y KUMURA .J LIAN2,A HILLIGER.T TSUCHIYA1,R BRUCHHAUS, H
KANAYA , H KOYAMA, U WELLHAUSEN, 0 HIDAKA, S SHUTO, S GEMHARDT,Y
SHIMOJO,B K MOON,H ITOKAWA, U EGGER, H ZHUANG,K TOMIOKA, M FUKUSHIMA, K
YAMAKAWA, D TAKASHIMA, I KUNISHIMA1, Y OOWAKI1 ANDG BEITEL2, TOSHIBA
COIP AND 2INFINEON TECHNOLOGIES JAPANKK, JAPAN 646 P10-5 HIGH
PERFORMANCE PT/SRBI1TA20I/HF02/SI STRUCTURE FOR ITFEIROELECTNC
RANDOMACCESS MEMORY D -Y WANG ,C -H CHIEN2,M -J YANG2, P LEHNEN1, C -C
LEU2, S -H CHUANG2, T-Y HUANG1 AND CY CHANG1, NATIONAL CHIAO TUNG UMV,
2NATIONAL NANO DEX ICE LABS, TAIWAN AND AIXTRONAG GEIMANY 648 PI0-6
IMPROVEMENT IN READ ENDURANCE OF FERROELECTRIC GATE FIELD-EFFECT
TRANSISTOR MEMORY WITH AN INTERMEDIATE ELECTRODE TD KHOAANDS TTONTEJAHT
JAPAN 650 PI0-7 A NOVEL SENSING CIRCUIT FOR HIGH SPEED SYNCHRONOUS MRAM
H KIM .S LEE .S LEE ,H SHIN ANDD KIM2, EWHA WOMANS UNIX AND KOOKMIN UNN
KOIEA 652 P10-8 ELECTRICAL CHARACTERIZATION SUB-MICRON MTJ CELLS
USINGSPM S PARK , J HEO .T KIM2 AND I CHUNG1, SUNGKYUNKWAN UNIX
AND SAMSUNGADVANCED INST OF TECHNOLOGY, KOIEA 654 PI0-9
HIGHLYANISOTROPIC AND CORROSION-LESS PTMN ETCHING USING NEGATIVE IONS IN
PULSE-TIME-MODULATED CHLORINE PLASMA S KUMAGAI .T SHIRAIWA2AND S
SAMUKAWA1, TOHOKU UMV AND2SONY COIP .JAPAN 656 PLL: SIGE/III-V/III-N
DEVICES AND CIRCUITS FOR WIRELESS AND OPTICAL COMMUNICATIONS PI 1-1
BALANCED-TYPE PEAK POWER INJECTIONAMPLIFIER FORSIMULTANEOUS HIGH
EFFICIENCY AND LARGESATURATION POWEI K IYOMASA,M NAKAYAMA, K HONGUCHI,Y
IKEDA ANDY SAKAI, MITSUBISHI ELECTNC COIP JAPAN 658 PI1-2 INDIUM
CONTENTDEPENDENCE OFELECTRON VELOCITY AND IMPACT IONIZATION IN
INAIAS/INGAAS METAMORPHIC HEMTS H ONO1, S TAMGUCHI1 ANDT SUZUKI1, SONY
COIP AND JAIST,JAPAN 660 PI 1 -3 TWO-STEP ELECTRODE SELF-ALIGNED
PROCESS OFINP-BASED RTDS FOR HIGHLY INTEGRATEDRTD/HEMT CIRCUITS T OHKI,
N OKAMOTO, T TAKAHASHI,K MAKIYAMA, K IMANISHI ANDN HARD FUJITSU LABSLTD
JAPAN 662 XXXVU PI 1-4 THE FABRIC ENHANCEMENT-MODE METAMORPHIC
INALAS/INGAAS HEMTBY PT SCHOTTKY METAL DIFFUSION C.-K. LIN, J.-C. WU,
W.-K. WANG, H.-C. CHIU AND Y-J. CHAN, NATIONAL CENTRAL UNIV., TAIWAN 664
PI 1-5L DYNAMIC THERMAL CHARACTERIZATION AND MODELING OF SILICON BIPOLAR
JUNCTION TRANSISTORS USING PULSEDRF MEASUREMENT SYSTEM G.-W. HUANG,
A.-S. PENG, K.-M. CHEN AND L.-H. CHANG, NATIONALNANO DEVICE LABS, TAIWAN
666 P12: SYSTEM-LEVEL INTEGRATION AND PACKAGING TECHNOLOGIES PI 2-1
EFFECT OF HIGH RESISTIVITY SI SUBSTRATE ON ANTENNA TRANSMISSION GAIN FOR
ON-CHIP WIRELESS INTERCONNECTS S. WATANABE, A.B.M.H. RASHID AND T.
KIKKAWA, RCNS,HIROSHIMA UNIV., JAPAN 668 PI 2-2 STACKED N-TYPE
EQUIVALENT CIRCUITANALYSIS OF FERROMAGNETICRF INTEGRATED INDUCTOR M.
YAMAGUCHI , S. IKEDA1, S. BAE , S. TANABE2, K. SUGAWARA2 AND A. KONRAD3,
TOHOKU UNIV., 2MITSUBISHI ELECTRIC CORP., JAPAN AND3UNIV. OFTORONTO,
CANADA 670 PI2-3 A STUDY OFESD PROTECTION UNDER PAD DESIGN FOR
COPPER-LOW K VLSI CIRCUITS J.-W. LEE1,A. CHAO Y. LI1-2 AND H. TANG-1,
NATIONALNANO DEVICELABS, 2NATIONAL CHIAO TUNG UNIV. AND3UNITED
MICROELECTRONICS CORP., TAIWAN 672 P13: ORGANIC SEMICONDUCTOR DEVICES
AND MATERIALS P13-1 CHARACTERIZATION OF HYDROGEN TREATED PENTACENEOTFT
S.-C. SUEN1, W.-T. WHANG2 AND J.-Y. YANG , NATIONAL NANO DEVICE LABS
AND -NATIONAL CHIAO-TUNG UNIV., TAIWAN 674 P13-2 THICKNESS DEPENDENT
DEVICE OPERATION OF SUBLIMED MOLECULAR FIELD-EFFECT TRANSISTORS S.
HOSHINO, M. YOSHIDA, S. UEMURA, T. KODZASA, T. KAMALA AND K. YASE,AIST,
JAPAN 676 P13-3 A STUDY ON MORPHOLOGY AND ELECTRICAL PROPERTIES OF
DENDRIMER COMPLEX WITH PT IONS K.-H. JUNG, H.-K. SHIN, C. KIM AND Y-S.
KWON, DONG-A UNIV., KOREA 678 PI3-4 HIGH RESOLUTION PERIODICAL STRUCTURE
FABRICATED BY LASER MACHINING IN PHOTOSENSITIVE POLYMERS S. SHIBATA1, Y
CHE12, O. SUGIHARA3, N. OKAMOTO AND T. KAINO3. SHIZUOKA UNIV., -NEDO
AND- TOLIOKU UNIV., JAPAN 680 P13-5 FABRICATION OFA PHOIOELECTROCHEMICAL
CELL USING A SELF-ASSEMBLED MONOLAYER OF TRIS(2,2 -
BIPYRIDINE)RUTHENIUM(II)-VIOLOGEN LINKED THIOL ON MULTISTRUCTURED GOLD
NANOPARTICLES N. TERASAKI1, K. OTSUKA2, T. AKIYAMA2 AND S. YAMADA2,
AISTAND -KYUSHU UNIV., JAPAN 682 PI3-6 ELECTROCHEMICAL STUDIES ON A
SELF-ASSEMBLED VIOLOGEN MONOLAYER USING QUARTZ CRYSTAL MICROBALANCE J.Y
OCK1, H.K. SHIN1, D.J. QIAN2, J. MIYAKE2 AND Y.S. KWON , DONG-A UNIV.,
KOREA AND2AIST, JAPAN .... 684 PI 3-7L PASSIVATION OF ORGANIC LIGHT
EMITTING DIODES WITH PLASMA POLYMERIZED P-XYLENE THIN FILMS DEPOSITED BY
PECVD S. SOHN, S. KHO, D. CHO, J. KIM AND D. JUNG, SUNGKYUNKWAN UNIV.,
KOREA 686 P13-8L FIELD EFFECT TRANSISTORS FORMED WITH THIN FILMS OFALKYL
SUBSTITUTED HEXABENZOCORONENE T. MINAKATA -2, OITDA AND2ASALII KASEI
CORP., JAPAN 688 P13-9L BOTTOM CONTACT ORGANIC THIN-FILM TRANSISTORS
WITH REDUCED CONTACT RESISTANCE M. KAWASAKI -2, S. IMAZEKI1-2, T.
KAMATA3 AND M. ANDO1-2, OITDA, 2HITACHI, LTD. AND AIST, JAPAN.... 690
P14: MICRO-NANO ELECTROMECHANICAL DEVICES FOR BIO- AND CHEMICAL
APPLICATIONS PI4-1 INCIDENT ANGLE EFFECT ON DEEP MEMS STRUCTURE IN
RESIST SPRAY COATING TECHNIQUE V.K. SINGH, M. SASAKI AND K. HANE, TOHOKU
UNIV., JAPAN 692 P14-2 A HIGH RESOLUTION HEMOGLOBIN MEASUREMENT CELL
INTEGRATED WITH SIGNAL PROCESSING CIRCUIT T. NODA , H. TAKAO1, M.
ASHIKI , H. EBI2, K. SAWADA1 AND M. ISHIDA1, TOYOHASHI UNIV.
OFTECHNOLOGY AND -HORIBA LTD., JAPAN 694 P14-3 VERTICALLY BUCKLED
BRIDGES FORTHREE-DIMENSIONAL SOI-MEMS M. SASAKI1, D. BRIAND2, W. NOELL2
AND N. DE ROOIJ2, TOHOKU UNIV.,JAPAN AND -UNIX: OFNEUCHATEL,
SWITZERLAND 696 P14-4 AN INVESTIGATION ON THE MECHANISM OFEHD PHENOMENA
IN HIGH INTENSITY AND ASYMMETRIC ELECTRIC FIELD S. SUZUKI, T. NAKASONE
AND K. ISHIKAWA, SEIKEI UNIV., JAPAN 698 XXXVLLL THURSDAY,SEPTEMBER 18
ROOMA A-7: ADVANCED SILICON DEVICES AND DEVICE PHYSICS - HIGH-K
TECHNOLOGY II - (9 00 - 10 30) 9 00 A-7-1 HIGH-K/OXYMTNDE GATE DIELECTI
IC - SEARCHING FOI SERENDIPITOUS MATERIALS - (INVITED) M HIRATANI,S
SAITO,Y SHIMAMOTO, S TSUJIKAWA,Y MATSUI, O TONOMURA, K TOM, J YUGAMI
ANDS KIMUIA, HITACHI, LTD JAPAN . 700 9 30 A-7-2 EFFECTOFCOULOMB
SCATTERING ON STRESS-INDUCED MOBILITY DEGRADATION IN NMOSFETS WITH
HFA10X/ SIO, DIELECTRICS W MIZUBAYASHI ,N YASUDA2,H HISAMATSU2,H OTA .K
TOMINAGA2,K IWAMOTO2, K YAMAMOTO2,T HONKAWA ,T NABATAME2 ANDA TONUMI 3,
MIRAI-ASRC, AIST, 2MIRAL- ASET, AISTAND3THE UMV OFTOKYO, JAPAN 702 9 50
A-7-3 INFLUENCE OF DIELECTRIC CONSTANT DISTRIBUTION IN STACKED GATE
DIELECTRICS ON ELECTRON MOBILITY IN INVERSION LAYEIS M ONO.T ISHIHARA
ANDA NISHIYAMA, TOSHIBA COIP ,JAPAN 704 10 10 A-7-4 CHAIACTENZATION OF
SOFT BREAKDOWN EFFECTS FOR POST-DEPOSITION NH, PLASMA TREATED HFON GATE
DIELECTRICS JC WANG, D C SHIE,TF LEI ANDC L LEE, NATIONALCHIAO TUNG UNIX
, TAIWAN 706 A-8: ADVANCED SILICON DEVICES AND DEVICE PHYSICS -ADVANCED
CMOS TECHNOLOGY II - (10 45 -12 05) 10 45 A-8-1 SCHOTTKY BARRIER HEIGHT
REDUCTION AND DRIVE CURRENT IMPROVEMENT IN METAL SOURCE/DRAIN MOSFET
WITH STRAINED-SI CHANNEL A YAGISHITA ,T-J KING2 AND J BOKOR2, TOSHIBA
COIP JAPANAND 2UNIV OFCALIFORNIA, BEIKELEY.USA 708 11 05 A-8-2
EXPERIMENTAL EVIDENCE OFGATE-INDUCED SCHOTTKY BAINER HEIGHTLOWERING DUE
TO IMAGE FORCE IN GATED SCHOTTKY DIODES A KINOSHITA, K UCHIDA AND J
KOGA, TOSHIBA COIP JAPAN 710 11 25 A-8-3 INTELLIGENTBSIM4 MODEL
PARAMETER EXTRACTION FOR SUB-100 NMMOSFETS ERA Y LI 2 ANDY-Y CHO2,
NATIONAL NANO DEVICE LABSAND NATIONALCHIAO TUNG UMV, TAIWAN 712 11 45
A-8-4 0 13PM LOW-K/CU LOGIC CMOS BASEDTECHNOLOGY FOR HIGH PERFORMANCE
ANALOG DEVICES JC GUO1,WY LIEN2,TL TSAI2, SM CHEN2, CM WU2,YC SUN1 AND P
YANG2, NATIONAL CHIAO TUNG UMV AND2TAIWAN SEMICONDUCTOI MANUFACLUUNG
CO P , TAIWAN 714 A-9: ADVANCED SILICON DEVICES AND DEVICE PHYSICS -
ELECTRON MOBILITY CHARACTENSTICS - (13 30 - 14 50) 13 30 A-9-1
RE-EXAMINATION ON THE UNIVERSALITY OFSI-MOS INVERSION LAYER MOBILITY H
INE .K KITA .K KYUNO ,S TAKAGI2,K TAKASAKI2,M KUBOTA2, S SAITO2, S
NISHIKAWA2 AND A TONUMI , THE UMV OFTOKYO AND 2STARC, JAPAN 716 13 50
A-9-2 CHANNEL DIRECTIONIMPACT OF(110) SURFACE SI SUBSTRATE ON
PERFORMANCE IMPROVEMENT IN SUB-100 NMMOSFETS H NAKAMURA,T EZAKI,T
IWAMOTO, M TOGO,N IKARASHI,M HANEANDT YAMAMOTO, NEC COIP , JAPAN 718 14
10 A-9-3 CHARACTERIZATION OF PLASMA NITNDATION IMPACT ON
LATERALEXTENSION PROFILE IN 50NMN-MOSFETBY SCANNING TUNNELING MICROSCOPY
H FUKUTOME .T SAIKI2,M HON2,T TANAKA2,R NAKAMURA2 AND H ANMOTO2,
FUJITSU LABS LTD AND 2FUJITSU LTD , JAPAN 720 14 30 A-9-4 HIGH
PERFORMANCE STRAINED SI/SIGE N-CHANNEL MOSFETS IMPACT OFALLOY
COMPOSITION AND LAYER ARCHITECTURE SH OLSEN,LS DNSCOLL,KSK KWA, S
CHATTOPADHAY ANDAG O NEILL, UNN OFNEWCASTLE, UK 722 XXXIX A-10: ADVANCED
SILICON DEVICES AND DEVICE PHYSICS - POLY-SI DEVICE AND SENSOR - (15 00
- 16 00) 15 00 A-10-1 HIGH PEIFOIMANCE POLY-SI DEVICE WITH THIN GATE
OXIDE FILM GIOWN BY PLASMA OXIDATION TECHNOLOGY F IMAIZUMI .T HAYASHI .K
ISHII2, A TERAMOTO ,M HNAYAMA ,S SUGAWA2ANDT OHMI , NICHE, TOHOKU UMV
AND -TOHOKU UNIX 724 15 20 A-10-2 ANOVEL HIGH PERFOIMANCE POWERMOSFET
WITH SPLIT WELL AND SPLIT POLY STRUCTURE F-T CHIEN K-W TU2 S-T SU2, C-L
CHENG2, J-H DUNG2,C-Y KUNG3 ANDY-C HUANG3, FENG CHIA UMV , 2CHUIO EXCEL
TECHNOLOGY COIP AND CHUNG USING UMV , TAIWAN 726 15 40 A-10-3
OPTIMIZATION OFTHE ULTRA-LOW DARK CURRENT CMOS IMAGE SENSOR CELL USING
N+ RING RESET P-H HUANG ANDY-C KING, STAR, NATIONAL ISINQ-HUA UMV ,
TAWAN 728 ROOM B B-7: SILICON PROCESS/MATERIALS TECHNOLOGIES - METAL
GATE, GATE OXIDE - (9 00-10 20) 9 00 B-7-1 LOW TMV (SI 8 NM) METAL-GATED
MOSFETS ON SI02 BASED GATE DIELECTNCS FOI HIGH PEIFOIMANCE LOGIC
APPLICATIONS V KU, R AMOS,A STEEGEN,C CABRAL, JR, V NARAYANAN, P
JAMISON, P NGUYEN,Y LI, M GNBELYUK, Y WANG, J CAI.A CALLEGAN, F MCFEELY,
F JAMIN, K WONG, E WU,A CHOU, D BOYD,H NG M LEONG C WANN, R LAMMY ANDW
HAENSCH, IBM, USA 730 9 20 B-7-2 NEW DUAL METAL GATE BY USING WSIX FOI
NMOS AND PT-ALLOYEDWSIX TOI PMOS K MATSUO, O ANSUMI AND K SUGUIO,
TOSHIBA COIP , JAPAN 732 9 40 B-7-3 HIGHLY SELECTIVE ETCHING OFTA/TANX
METAL ELECTIODE TO SI3N4 GALE DIELECTI IC EMPLOYING SICL4-NF3 GAS
MIXTURE PLASMA H SHIMADA AND K MARUYAMA, SEIKOEPSON COIP , JAPAN 734 10
00 B-7-4 HIGH QUALITY SILICON NILNDE FILM FOIMED BY MICIOWAVE-EXCITED
PLASMA ENHANCED CHEMICAL VAPOI DEPOSITION WITH DUAL GAS SHOWEI HEAD H
TANAKA , C ZHONG2,Y HAYAKAWA1, M HNAYAMA2,A TERAMOTO1, S SUGAWA ANDT
OHMI2, TOHOKU UNN AND2NLCHE IOHOKUUMV JAPAN 736 B-8: SILICON
PROCESS/MATERIALS TECHNOLOGIES - SI PIOCESS - (10 45 - 12 05) 10 45
B-8-1 NI-SAHCIDED POLY-SI/POLY-SIGE LAYERED GATE TECHNOLOGY FOR
65NM-NODE CMOSFETS A MUTO, H OHJI,T MAEDA AND K TORN, SELEIE, JAPAN 738
11 05 B-8-2 PIE-AMORPHIZATION AND CO-IMPLANTATION SUITABILITY FOI
ADVANCEDPMOS DEVICES INTEGRATION R SURDEANU ,BJ PAWLAK1,R LINDSAY2, M
VAN DAL1, G DOOMBOS1, C J J DACHS1, YV PONOMAREV1, J J LOO1, K
HENSON2,MA VERHEIJEN3,M KAISER1,X PAGES4,M JURCZAK2 AND P STOLK1,
PHILIPS RESEAICH LEUVEN, -JMEC, BELGIUM, PHILIPS RESEAICH LABS AND
4ASM INTEL NATIONAL THE NETHEILANDS 740 1125 B-8-3 KINETICS OF BORON
ACTIVATION BY FLASH LAMP ANNEALING K YAMASHITA ,M NOGUCHI .H NISHIMOII1,
T IDA1,M YOSHIOKA2,T KUSUDA1,T ANKADO1 AND K OKUMUIA4, SELETE,2USHIO
INC , DAUUJIPON SCIEEN MFG CO LTD AND4 THE UNIX OF TOKYO, JAPAN 742 11
45 B-8-4 HIGH-SPEED DAMAGE-FICE CONTACT HOLE ETCHING USING DUAL SHOWEI
HEAD MICIOWAVE-EXCITED HIGH-DENSITY PLASMA EQUIPMENT T GOTO ,H
YAMAUCHI T KATO .A TEIAMOTO .M HNAYAMA , S SUGAWA2ANDT OHMI1, NICHE,
TOHOKU UMV AND TOLWKU UMV, LAPAN 744 B-9: SILITON-ON-INSULATOR
TECHNOLOGIES - SOILOW POWEI APPLICATIONS - (13 30 - 14 40) 13 30 B-9-1
ULTRALOW-POWEI CMOS/SOI CUCUIT TECHNOLOGY FOR UBIQUITOUS COMMUNICATIONS
(INVITED) Y KADO,Y MATSUYA, S MUTOH, J TERADA, H MONSAWA,Y SATO, T
DOUSEKI ANDH KYURAGI, NITMICIOSYSTEM INTEGIATION LABS JAPAN LAD XL 14 00
B-9-2 ON THE PERFORMANCE ADVANTAGE OFUNDOPED ULTRA THIN-FILM FD-SOI
MOSFETS H MATSUHASHI .T OKAMURA ,T DOUSEKI2,N MUIRA .T CHIBA1 AND S
BABA1, OKI ELECT)IC INDUSTIY CO , LTD AND2NTTMICIOSYSTEM INTEGIATWN
LABS, JAPAN 748 14 20 B-9-3 A0 5-VNOISE-SHAPINGA/D CONVERTER USING
LOW-THRESHOLD FD-SOI TRANSISTORS Y MATSUYA ANDT DOUSEKI,NTTMICIOSYSTEM
INTEGIATION LABS, JAPAN 750 B-10: SILICON-ON-INSULATOR TECHNOLOGIES -
SOICMOS TECHNOLOGIES - (15 00 - 17 00) 15 00 B-L0-1 QUALITY COMPARISON
OF COMMERCIAL SIHCON-ON-INSULATORWAFERS BY PHOTOLUMINESCENCE (INVITED) M
TAJIMA, INST OFSPACE ANDASTIONAUTICAL SCIENCE, JAPAN 752 15 30 B-L0-2
LOW-NOISE AND HIGH-FREQUENCY0 10U.M BODY-TIED SOI-CMOS TECHNOLOGY WITH
HIGH-RESISTIVITY SUBSTRATE FOR LOW-POWER LOGBPS NETWORK LSI T
IWAMATSU ,M TUJIUCHI .Y HIRANO .T MATSUMOTO ,H TAKASHINO ,T IKEDA ,T
YOSFNMURA2, D CHEN2,T OKA2, H KONDOH2,T IPPOSHI .S MAEGAWA ,Y INOUE ,M
INUISHI ANDY OHJI , RENESAS TECHNOLOGY COIP AND -MITSUBISHI ELECTI IC
COIP , JAPAN 754 15 50 B-L0-3 FULLY DEPLETED SOICMOS DEVICE WITH RAISED
SOURCE/DRAIN FOR90NM EMBEDDEDSRAM TECHNOLOGY M-H OH,C-H PARK,HS KANG,
C-B OH,Y-W KIM AND K-P SUH, SAMSUNGELECTIOMCS CO, LTD, KOIEA 756 16 10
B-10-4 BODY CONTACT STRUCTURE USING ELEVATED FIELD INSULATOR FOR
ULTRA-THIN FILM SOI-MOSFETS S YAMAGAMI, R KOH.H WAKABAYASHI,J-W LEE,Y
SAITO,A OGURA,M NAUHIRO.K ARAI, H TAKEMURA,Y OCHIAI,K TAKEUCHIANDT
MOGAMI,NEC COIP JAPAN 758 16 30 B-10-5L HIGH PEIFOIMANCE45NMCMOS
TECHNOLOGY WITH 20NM MULTI-GATE DEVICES Z KNVOKAPIC, C TABERY,W
MASZARA,Q XIANG ANDM -R LIN, AMD, USA 760 16 45 B-10-6L DOUBLE GATE
MOSFET BY ESS (EMPTY SPACE IN SILICON) ARCHITECTURE T SATO, H NU,M
HATANO,Y KATO, K ISHIGO,K TAKENAKA, H HAYASHI,T HIRANO, K IDA, T
WATANABE,N AOKI, K INO, S KAWANAKA, I MIZUSHIMA ANDY TSUNASHIMA, TOSHIBA
COIP , JAPAN 762 ROOM C C7: ORGANIC SEMICONDUCTOR DEVICES AND MATERIALS
- OIGANIC THIN FILMTRANSISTOR -(9 15 - 10 30) 9 15 C-7-1 TOWARDS PUNTED
ORGANIC ELECTRONICS SEMICONDUCTOR MATERIALS DESIGN FOR PLASTIC
TRANSISTORS (INVITED) BS OR G,XEIO RESEAICH CENTIE OFCANADA, CANADA 764
9 45 C-7-2 SELF-ALIGNMENT ORGANIC FIELD-EFFECT TRANSISTOR USING
BACK-SIDE EXPOSURE METHOD T HYODO, F MONTA, S NAKA,H OKADA ANDH
ONNAGAWA, TOVAMA UMV, JAPAN 766 10 00 C-7-3 AWATER-SOLUBLE
PHOTOLITHOGRAPHY PROCESS AND THEAPPLICATION TOOTFT FABRICATION K H KIM
ANDCK SONG, DONG-A UMV, KOIEA 768 10 15 C-7-4 MEASUREMENT OF LATERAL
CARRIER MOBILITY IN ORGANIC THIN FILMS USING TIME OF FLIGHT METHOD M
KITAMURA, T IMADA, S KAKO ANDY ARAKAWA, I LIE UMV OFTOKYO, JAPAN 770 C8:
ORGANIC SEMICONDUCTOR DEVICES AND MATERIALS - ORGANIC OPTICS - (10 45 -
12 00) 10 45 C-8-1 ELECTI IC FIELDINDUCED SECOND HARMONIC GENERATION
FROM VACUUM EVAPORATED METAL- PHTHALOCYANINE FILM/METAL ELECTRODE
INTERFACE C-Q LI.T MANAKA ANDM IWAMOTO, TOKYO INST OFTECHNOLOGYJAPAN 772
11 00 C-8-2 CONVERSION BETWEEN THREE AND TWO DIMENSIONAL OPTICAL WAVES
INATTENUATED TOTALREFLECTION KRETSCHMANN CONFIGURATION WITH
NANOSTRUCTURED LANGMUIR-BLODGETT FILMS F KANEKO .K WAKUI , H
HATAKEYAMA , S TOYOSHIMA .K SHINBO ,K KATO .T KAWAKAMI1, Y OHDAIRA AND
T WAKAMATSU2, NUQATA UMV AND2IBAIUKI NATIONAL COLLEGE OFTECH , JAPAN
774 11 15 C-8-3 LOW-BIREFRMGENT SLAB WAVEGUIDE FABRICATED WITH
HOT-EMBOSSING FOR SOL-GEL DERIVED PHENYL- METHYL SILSESQUIOXANE FILMS K
HASUI12,M TOMIKI ANDN OKAMOTO , SLUZUOKA UNIX AND COININGJAPANKK JAPAN
776 XH 11:30 C-8-4 WATERPROOF ANTI-REFLECTION FILMS FABRICATED BY
LAYER-BY-LAYER ADSORPTION PROCESS S. FUJITA AND S. SHIRATORI, KEIO
UNIV.,JAPAN 778 11:45 C-8-5 OPTICAL WAVEGUIDE CHARACTERIZATION OFSOME
PYROELECTRIC POLYMER THIN FILMS G.K. TIWARI AND H.V TIWARY, PANDIT
RAVISHANKAR SHUKLA UNIV., INIDIA 780 C9: ORGANIC SEMICONDUCTOR DEVICES
AND MATERIALS - MOLECULAR DEVICES AND MATERIALS - (13:30 - 14:45) 13:30
C-9-1 POTENTIAL PROFILE AND OPTO-ELECTRONIC PROPERTIES AT NANO INTERFACE
OF CONDUCTING POLYMER AND METALS (INVITED) K. KANETO AND W. TAKASHIMA,
KYUSHU INST, OFTECHNOLOGY, JAPAN 782 14:00 C-9-2 EFFECTS OFDIFFERENT
MATERIALS USE FORINTERNAL FLOATING ELECTRODE ON THE PHOTOVOLTAIC
PROPERTIES OFTANDEMTYPE ORGANIC SOLAR CELL K. TRIYANA, T. YASUDA, K.
FUJITA AND T. TSUTSUI, KYUSHU UNIV., JAPAN 784 14:15 C-9-3 PHOTOINDUCED
GATE OPERATION AND TEMPERATURE DEPENDENCE IN THE COULOMB STAIRCASE OF
ORGANIC SINGLE ELECTRON TUNNELING JUNCTIONS Y. NOGUCHI, T. MANAKA AND M.
IWAMOTO, TOKYO INST, OFTECHNOLOGY, JAPAN 786 14:30 C-9-4 THIN FILM
TRANSISTORS WITH ORIENTED CUPPER PHTHALOCYANINE MICRO-CRYSTALS
FABRICATED BY PHYSICAL VAPORDEPOSITION UNDERDC ELECTRIC FIELD M. SAKAI,
M. LIZUKA, M. NAKAMURA AND K. KUDO, CHIBA UNIV., JAPAN 788 C10: ORGANIC
SEMICONDUCTOR DEVICES AND MATERIALS - ELECTROLUMINESCENT DEVICES AND
MATERIALS - (15:00 - 16:00) 15:00 C-10-1 ANALYSIS OF A CHARGED BIO
MOLECULAR PARTICLE PASSING THROUGH SEMI CONDUCTIVE ION CHANNEL ON
BIOLOGICAL MEMBRANE H. HIRAYAMA, ASALUKAWAMEDICAL COLLEGE, JAPAN 790
15:15 C-L0-2 FABRICATION AND CHARACTERISTICS OF INCREASED EFFICIENCY OF
LAYERED POLYMERIC ELECTROLUMINESCENT DIODES Y. HINO, M. YAMAZAKI, H.
KAJII AND Y. OHMORI, OSAKA UNIV., CRCAST, JAPAN 792 15:30 C-10-3
PASSIVATION OF ORGANIC LIGHT EMITTING DIODES WITH PLASMA POLYMERIZED
P-XYLENETHIN FILMS DEPOSITED BYPECVD S. SOHN, S. KHO, D. CHO AND D.
JUNG, SUNGKYUNKWAN UNIV., KOREA 794 15:45 C-10-4 HIGH EFFICIENCY
FLUORESCENT ORGANIC LIGHT EMITTING DEVICES UTILIZING A PHOSPHORESCENT
SENSITIZER S. LIU AND J. FENG, JILIN UNIV., CHINA 796 ROOM D D7: NEW
MATERIALS AND CHARACTERIZATION - CARBON NANOTUBE DEVICES AND MATERIALS -
(9:05 - 10:30) 9:05 D-7-0L SIMULTANEOUS FORMATION OFMULTI-WALL CARBON
NANOTUBES AND THEIR LOW-RESISTANCE OHMIC CONTACTS FOR FUTURE ULSI VIA
INTERCONNECTS M. NIHEI, A. KAWABATA, M. HORIBE ANDY AWANO, FUJITSU LTD.,
JAPAN 798 9:20 D-7-1 CHARACTERISTICS OF A CARBON NANOTUBE FETANALYZED AS
A BALLISTIC NANOWIRE FET Y KIMURA1, T. SHIMIZU1 AND K. NATORI1-2, UNIV.
OFTSUKUBA AND -CREST-JST,JAPAN 800 9:40 D-7-2 PERFORMANCE ESTIMATION AND
BENCHMARKING FOR CARBON NANOTUBE FETS AND NANODIODE ARRAYS (INVITED)
H.-S.P. WONG , G.S. DITLOW1, P.M. SOLOMON AND X. WANG2, IBM RESEARCH.
T.J. WATSON RESEARCH CENTER AND2IBM MICROELECTRONICS,SRDC, USA 802 10:10
D-7-3 ULTRA-LOW ENERGY NITROGEN-ION IRRADIATION FOR IMPROVEMENT OF
CARBON NANOTUBE CHANNEL SINGLE ELECTRON TRANSISTOR T. KAMIMURA - , K.
YAMAMOTO2 AND K. MATSUMOTO1-4, UNIV. OFTSUKUBA, 2AIST, OSAKA UNIV. AND
4CREST-JST, JAPAN 804 XLII D8:NEW MATERIALS AND CHARACTERIZATION -
HIGH-K DIELECTRICS I - (10 45 - 12 10) 10 45 D-8-1 THERMAL INSTABILITY
OF POLY-SI GATE A1203MOSFETS WS KIM.T KAWAHAIA.H ITOH, H HONUCHI.A MUTO,
T MAEDA, R MITSUHASHI, K TORN AND H KITAJNNA, SELETE JAPAN 806 11 05
D-8-2 W/HT02 GATE STACKS WITH TINV~L 2NM ANDLOW CHARGETRAPPING A
CALLEGAN .P JAMISON1,BH LEE1,D NEUMAYEI .V NARAYANAN1 S ZAFAI .E
GOUSEV1, C D EMIC^D LACEY .M GNBELYUK2,C CABIAL .A STEEGEN2,V KU2, R
AMOS2,Y LI2, P NGUYEN2,FMC FEELY ,G SINGCO J CAI ,S-H KU2,YY WANG2, C
WAJDA1, D O MEARA3, H SHINNKI3 AND T TAKAHASHI3, IBM SRDC, -IBM T J
WATSON RESEAICH CENTEI AND 3TOKYO ELEC TION AMEI ICA, USA 808 11 25
D-8-3L CHARACTERIZATION OF HAFNIUM DIFFUSION INTO THERMALLY-GROWN SIO,
ON SI(100) M YAMAOKA.A OHTA AND S M YAZAK , HUOSHIMA UNIX JAPAN 810 11
40 D-8-4L NANOSCALE PROFILING OFSURFACE POTENTIAL ACROSS SILICON P-N
JUNCTIONS BY SCANNING RESONANCE TUNNELING SPECTIOSCOPY L BOLOTOV,T OKUI,
H ITOH AND T KANAYAMA, MIRAIAIST JAPAN 812 11 55 D-8-5L ADVANCED
SIGE-FIEESTRAINED SI ON INSULATORSUBSTRATES THEIMAL STABILITY AND
CARRIER MOBILITY ENHANCEMENT TA LANGDO,M ERDTMANN.CW LEITZ,M T CURNE.A
LOCHTEFELD, Z CHENG,JA CARLIN, VK YANG,C J VINEIS, C MAJOR, G
BRAITHWAITE, H BADAWIANDMT BUKUA.AMBEIWAVE SYSTEMS COIP , USA 814 D9:
NEW MATERIALS AND CHARACTERIZATION HIGH-KDIELECTI ICS II - (13 30 - 14
30) 13 30 D-9-1 SEPARATE AND INDEPENDENTCONTROL OF INTERFACIAL
BANDALIGNMENTS AND DIELECTRIC CONSTANTS IN TRANSITION METAL-RARE EARTH
TERNARY OXIDES G LUCOVSKY Y ZHANG , JL WHITTEN .DG SCHOLM2ANDJL FREEOUF,
NOT TH CAIOLMA STATE UMV, 2PENNSYHAMASTATEUMV AND OIEGON GIADUATE INST
USA 816 13 50 D-9-2 CHEMICAL STRUCTURES OFHFOVSI INTERFACIAL TRANSITION
LAYER H NOHIRA .YTAKATA2, K KOBAYASHI3,MB SEMAN .S JOUMON4, K NAKAJIMA4
M SUZUKI4, K KIMUIA4, Y SUGITA5, O NAKATSUKA6,A SAKAI6, S ZAIMA6, T
ISHIKAWA1, S SHIN2 AND T HATTON , MUSASHI INST OFTECHNOLOGY, -RIKEN,
JASR1,4 KYOTO UNIX FUJITSU LID AND NAGOYA UMV, JAPAN 818 14 10 D-9-3
PULSED-SOURCEMOCVD HFO, ULTRATHIN FILM GROWTH OPTIMIZED BY IN SITU
ELLIPSOMETRY MONITORING Y TSUCHIYA,M ENDOH AND S ODA, TOKYO INST
OFTECHNOLOGY, JAPAN . 820 D10: NEW MATERIALS AND CHARACTERIZATION -
HIGH-K DIELECTRICS III - (15 00 - 16 20) 15 00 D-10-1 MOLECULAR DYNAMIC
SIMULATION ON THE CRYSTALLIZATION OFHFO,, HF-ALUMMATE, AND HF-SIHCATE Y
KOSAKA, T YAMASAKI AND C KANETA,FUJITSULABS LTD ,JAPAN 822 15 20 D-10-2
THEORETICAL ANALYSIS OFOXYGEN DIFFUSION IN MONOCLMIC HF02 M IKEDA .G
KRESSE2,T NABATAME AND A TONUMI14, MIRAI ASET,AIST JAPAN, 2UMXEISITAT
WIEN, GEIMANAY, MIRAI-ASRC,AISTAND4 TLIE UMV OFTOKYO,JAPAN 824 15 40
D-L0-3 ETCHING YIELDS OFHF02 UNDERAR* AND CFN+ (X = 1, 2, 3)ION BEAM
IRRADIATION K KARAHASHI .N YAMAGISH^T HONKAWA2 ANDA TORIUMI23, MIRAI
ASET,AIST, MIRAI- ASRC,AISTAND3THE UNIX OFTOKYOJAPAN 826 16 00 D-L0-4
SELECTIVE DRY ETCHING OF HF02 IN CF4, CI2 AND HBR BASED CHEMISTRY T
MAEDA, H ITO,R MITSUHASHI,A HONUCHUT KAWAHARA.A MUTO,T SASAKI,K TORN AND
H KITAJIMA,SELETE JAPAN 828 XHN ROOM E E7: NOVEL DEVICES, PHYSICS AND
FABRICATION - NOVEL MATERIALS AND DEVICES - (9 30 - 10 30) 9 30 E-7-1
SOLID-ELECTROLYTE NANOMETER SWITCH T SAKAMOTO12, H SUNAMURA12,H
KAWAUIA12,T HASEGAWA23,T NAKAYAMA21 AND M AONO21, NEC COIP , 2SORST,
1ST AND 3NIMS, JAPAN 830 9 45 E-7-2 PIEZORESISTIVE NANOMECHANICAL
CANTILEVER BASED ON INAS/ALGASB HETEROSTRUCTURE L F HOULET1,H
YAMAGUCHI , S MIYASHITA2 ANDY HIRAYAMA 3, NTTBASIC RESEAICH LABS,
-NTT-ATAND CREST-1ST, JAPAN 832 10 00 E-7-3 INP HOT ELECTRON
TRANSISTORS MODULATED BY GATE ELECTRODES SANDWICHING EMITTER MESA K
TAKEUCHI ,H MAEDA ,R NAKAGAWA ,Y MIYAMOTO12 AND K FURUYA 2, TOKYOINST
OF TECHNOLOGY AND2CREST-JST JAPAN 834 10 15 E-7-4 SINGLE-ELECTRON
TIANSISTORS WITH LARGE-ENEGRY BINAIY STATES IN AGAN QUANTUM DOT K
KAWASAKI12,Y KITAICHI 2, M TAKEUCHI2 AND Y AOYAGI12, TOKYO INST
OFTECHNOLOGY AND 2CREST-JST, JAPAN 836 E8: NOVEL DEVICES, PHYSICS AND
FABRICATION - CAIBON NANOTUBES - (10 45 - 12 00) 10 45 E-8-1 CARBON
NANOTUBE SPM PIOBE FABRICATED BY NANOENGINEENNG (INVITED) S AKITA1 ANDY
NAKAYAMA12, OSAKA PIEF UMV AND -OSAKA UMV .JAPAN 838 1115 E-8-2
TOP-GATE CARBON-NANOTUBE FIELD-EFFECT TIANSISTOIS WITH VEIY HIGH
INTNNSIC TIANSCONDUCTANCE FNIHEY13,H HONGO 3,Y OCHIAI13,M YUDASAKA12 AND
S IIJIMA1245, NEC COIP , 2!ST, JAPAN FINE CEIAMIES CENTEI,4AISTAND
MEIJO UMV, JAPAN 840 11 30 E-8-3 FABRICATION OFTWO-DIMENSIONAL CAIBON
NANOSTRUCTUICS USING RADIO-FREQUENCY PLASMA-ENHANCED CHEMICAL VAPOI
DEPOSITION M HUAMATSU1, K SHIJI1, H AMANO ,Y ANDO ANDM HON2, MEIJO UMV
ANCL2NAGOYA UMV, JAPAN 842 11 45 E-8-4 CONTROL OF ELECTI ICAL PROPERTY
IN MULTI-WALL CARBON NANOTUBE USING ELECTRICAL BREAKDOWN N AOKI ,K
MIYAMOTO ,N OGUN .T SASAKI1, K ISHIBASHI2 ANDY OCHIAI , CLUBAUMV AND
-RIKEN, JAPAN 844 E9: NOVEL DEVICES, PHYSICS AND FABRICATION - SI
NANOWIRE AND DOTS - (13 30 - 14 45) 13 30 E-9-1 MULTIPLE-STEP ELECTRON
CHARGING IN SI QUANTUM-DOT FLOATING GATE NMOSFETS M IKEDA, Y SHIMIZU,T
SHIBAGUCHI, H MURAKAMI AND S MIYAZAKI, HUOSHIMAUMV JAPAN 846 13 45 E-9-2
HYBRID SILICON NANOCRYSTAL SILICON NITRIDE MEMOIY R F STEIMLE,R A RAO, B
HRADSKY, R MURAHDHAR,M SADD,M RAMON, S STRAUB, S BAGCHI, XD WANG, J
HOOKER AND B E WHITE JR, MOTOIOLA SPS, USA 848 14 00 E-9-3 MONTE-CAILO
SIMULATION OFSINGLE-ELECTRON NANOCRYSTAL MEMORIES J S SIM, J KONG, J D
LEE AND B -G PARK, SEOUL NATIONAL UMV, KOIEA 850 14 15 E-9-4 GIOWTH OF
SI NANOWIRE USING METAL-INDUCED LATEIAL CIYSTALLIZATION K MAKIHIRA ANDT
ASANO, KYUSHU INST OF TECHNOLOGY, JAPAN 852 14 30 E-9-5L IMPROVED
ELECTION EMISSION PROPEITIES OF SCREEN-PRINTED CAIBON NANOTUBE FILM BY
HYDROGEN PLASMA SURFACE TREATMENT T FENG1, J ZHANG1,X WANG .X LIU ,S
ZOU .Q LI2 AND J XU2, SHANGLIAI INST OF MUCOSYSTEM AND INFOIMOTION
TECHNOLOGY AND2EASTCHINA NOIMAL UMV , CHINA 854 E10: NOVEL DEVICES,
PHYSICS, AND FABRICATION - QUANTUM COMPUTING DEVICES - (15 00 - 16 15)
15 00 E-10-1 QUANTUM OSCILLATIONS IN TWO COUPLED CHAIGE QUBITS (INVITED)
Y PASHKUAT YAMAMOTO12 O ASTAFIEV1,Y NAKAMURA12, D AVERIN1 AND J -S
TSAI12, RIKEN 2NEC COIP , JAPAN AND STATE UNN OFNEW YOIK, USA 856 15
30 E-L0-2 MEASUIEMENT OF TWO-QUBIT STATES DETECTED BY QUANTUM POINT
CONTACTS T TANAMOTO1 AND X HU2, TOSHIBA COIP , JAPAN AND 2UMV AT
BUFFALO, SUNY USA 858 XLIV 15 45 E-L0-3 COHEIENT CONTROL IN
INHOMOGENEOUSLY BROADENED QUANTUM DOTS ENSEMBLE AND ITS COHERENT
TRANSIENT PHENOMENA N TSURUMACHI12,K KOMON 2ANDT HATTON1, AIST
2CRESTJSTAND INST OFAPPLIED PHYSICS, UNN OFTSUKUBA, JAPAN 860 16 00 E-L
0-4 OBSERVATION OF THE SPIN-RELATED EVEN-ODD EFFECT IN SINGLE-WALL
CAIBON NANOTUBE QUANTUM DOTS H MAKI,M SUZUKI,Y ISHIWATA ANDK
ISHIBASHI,RIKEN,JAPAN 862 ROOM F F7: OPTOELECTRONIC DEVICES AND PHOTONIC
CRYSTAL DEVICES - PHOTONIC CRYSTAL DEVICES I - (9 00 - 10 30) 9 00 F-7-1
3D PHOTONIC CRYSTAL AS ANOVEL DIELECTRIC MATERIAL (INVITED) S
KAWAKAMI .T KAWASHIMA2,T SATO12, T AOYAMA2,W ISHIKAWA2,Y OHTERA .H
OHKUBO1, K MIURA1 ANDY HONMA2, NICHE, TOHOKU UMV AND2PHOTOMC LATTICE
INC JAPAN 864 9 30 F-7-2 COUPLED WAVEGUIDE DEVICES BASED ONAUTOCLONED
PHOTONIC CIYSTALS M SHIRANE .A GOMYO1, K MIURA2, Y OHTERA2, H YAMADA1
AND S KAWAKAMI1-, NEC COIP AND NICHE TOHOKU UMV, JAPAN 866 9 45 F-7-3
REFLECTION CHARACTERISTICS OF COUPLED DEFECT WAVEGUIDES IN PHOTONIC
CRYSTALS T KATSUYAMA12,K HOSOMI123,T FUKAMACHI 23 ANDY ARAKAWA , THEUMV
OFTOKYO, -OITDA AND HITACHI LTD , JAPAN 868 10 00 F-7-4 ENHANCEMENT OF
CAVITY-Q IN A QUASI-THREE DIMENSIONAL PHOTONIC CRYSTAL M ITO, S IWAMOTO
AND Y ARAKAWA, THE UMV OFTOKYOJAPAN 870 10 15 F-7-5 PROPOSAL OF A NOVEL
RING WAVEGUIDE DEVICE OF 2D PHOTONICCRYSTAL SLAB THETRANSMITTANCE
SIMULATED BY FDTD ANALYSIS K FURUYA 2,N YAMAMOTO1,Y WATANABE ANDK
KOMON1 AISTAND2CREST-JST, JAPAN 872 F8: OPTOELECTRONIC DEVICES AND
PHOTONIC CRYSTAL DEVICES - PHOTONIC CIYSTAL DEVICES II - (10 45 - 11:45)
10 45 F-8-1 SEMICONDUCTOR PHOTONIC CRYSTAL DEVICES (INVITED) T BABA,
YOKOHAMA NATIONAL UNIX , JAPAN 874 11 15 F-8-2 ULTRAVIOLETSECOND
HARMONIC GENERATION AND SUM-FREQUENCYMIXING IN NONLINEAR-OPTICAL POLYMER
PHOTONIC-CRYSTAL WAVEGUIDES S INOUE, K KAJIKAWA ANDY AOYAGI, TOKXOLNST
OFTECHNOLOGY, LAPAN 876 11 30 F-8-3 ENHANCED LIGHT EXTRACTION EFFICIENCY
OFGAN-BASED BLUELED USING EXTENDED-PITCH SURFACE PHOTONIC CRYSTAL K
ONTA, S TAMURA, T TAKIZAWA, T UEDA,M YURI, S TAKIGAWA AND D UEDA,
MATSUSHITA ELECTI IC INDUSTI LAL CO , LID,JAPAN 878 F9: OPTOELECTRONIC
DEVICES AND PHOTONIC CRYSTAL DEVICES - ULTIAFAST PHOTONIC DEVICES - (13
30 - 14 45) 13 30 F-9-1 SOA-BASED FUNCTIONAL DEVICES FOR FUTURE OPTICAL
NETWORKS (INVITED) ML NIELSEN, J D BUION,M NORDANDMN PETERSEN, RESEAICH
CENTERCOM, TECHNICALUMV OFDENMAI K, DENMAI K 880 14 00 F-9-2 100-GBIT/S
FULL-RATE OPERATION OFPD-EAM OPTICAL GATE FOR RETIMING FUNCTION T
YOSHIMATSU, S KODAMA,K YOSHINO ANDH ITO,NTTCOIP , JAPAN 882 14 15 F-9-3
SEMICONDUCTOR DISPERSION COMPENSATORS BASED ONASYMMETRICALLY COUPLED
WAVEGUIDES Y LEE,T SHIOTA,A TAKEI,T TANIGUCHI ANDH UCHIYAMA,HITACHI,
LTD, JAPAN 884 14 30 F-9-4 LINEAR AND NONLINEARFEMTOSECOND PULSE
PROPAGATION THROUGH A QUANTUM NANO-STRUCTURE OPTICAL WAVEGUIDE OBSERVED
WITHXFROG SPECTROSCOPY N TSURUMACHI 2,N WATANABE3,K HIKOSAKA1 X-L
WANG12, K KOMON 2,T HATTON1AND M OGURA12, AIST, 2CREST-JSTAND 3UNN
OFTSUKUBAJAPAN 886 XLV F10: OPTOELECTRONIC DEVICES AND PHOTONIC CRYSTAL
DEVICES - NEW PHOTONIC MATERIALS - (15:00 - 16:00) 15:00 F-I0-1
INTERSUBBAND TRANSITION BASED ON A NOVEL II-VI QUANTUM WELL STRUCTURE
FOR ULTRAFAST ALL-OPTICAL SWITCHING R. AKIMOTO, B. LI, F. SASAKI AND T.
HASAMA, AIST, PHOTONICS RESEARCH INST., JAPAN 888 15:15 F-10-2 CONTROL
OFINXGA, XAS CAPPING LAYER INDUCED OPTICAL POLARIZATION IN EDGE-EMITTING
PHOTOLUMINESCENCE OFINAS QUANTUM DOTS P. JAYAVEL1, H. TANAKA1, T. KITA1,
O. WADA1, H. EBE2, M. SUGAWARA2, J. TATEBAYASHI2, Y. ARAKAWA2, Y.
NAKATA3 AND T. AKIYAMA3, KOBE UNIV., -THE UNIV. OFTOKYO AND FUJITSU
LABS LTD.,JAPAN 890 15:30 F-10-3 HIGH PERFORMANCE ELECTROLUMINESCENCE
FROM NANOCRYSTALLINE SI WITH CARBON BUFFER B. GELLOZ AND N. KOSHIDA,
TOKYO UNIV. OFAGRICULTURE ANDTECHNOLOGY, JAPAN 892 15:45 F-L0-4 OPTICAL
COMPONENT COUPLING USING SELF-WRITTEN WAVEGUIDES N. HIROSE AND O.
IBARAGI, ASET,JAPAN 894 ROOM G G-7: SIGE/III-V/III-N DEVICES AND
CIRCUITS FOR WIRELESS AND OPTICAL COMMUNICATIONS - III-V DEVICES &
CIRCUITS-(9:00-10:30) 9:00 G-7-1 OVER65% EFFICIENCY 300MHZ BANDWIDTH
C-BAND INTERNALLY-MATCHED GAASFET H. OHTSUKA, K. MORI, H. YUKAWA, H.
MINAMIDE, Y. KITTAKA, T. TSUNODA, S. OGURA AND T. TAKAGI,
MITSUBISHIELECTRIC CORP., JAPAN 896 9:15 G-7-2 HIGH-PERFORMANCE INPHBTS
WITH A COMPOSITE COLLECTOR K. KURISHIMA, M. IDA, K. ISHII AND N.
WATANABE, NTTCORP.,JAJXM 898 9:30 G-7-3 A HIGH RELIABILITY AND HIGH GAIN
INP-HEMT WITH COMPOSITE CHANNEL STRUCTURE S. KURACHI, Y. NONAKA AND J.
NIKAIDO, FUJITSU QUANTUM DEVICES LIMITED, JAPAN 900 9:45 G-7-4 75-GHZ
OPTICAL CLOCK DIVIDE-BY-TWOOEIC USING INPHEMTS AND UNI-TRAVELING-CARRIER
PHOTODIODE K. SANO, K. MURATA, H. MATSUZAKI, H. KITABAYASHI, T.
AKEYOSHI, H. ITO, T. ENOKI AND H. SUGAHARA, NTT CORP.,JAIMN 902 10:00
G-7-5 HIGH-SPEED III-VHEMT ANDHBT DEVICES AND CIRCUITS FORETDM
TRANSMISSION BEYOND 80 GBIT/S (INVITED) R. QUAY, M. SCHLECHTWEG, A.
LEUTHER, M. LANG, U. NOWOTNY, O. KAPPELER, W. BENZ, M. LUDWIG, M. LEICH,
R. DRIAD, W. BRONNER AND G. WEIMANN, FRAUNHOFER INSTITUTFIIR ANGEWANDTE
FESTKDRPERPHYSIK, GERMANY 904 G-8: SIGE/III-V/III-N DEVICES AND CIRCUITS
FOR WIRELESS AND OPTICAL COMMUNICATIONS - SIGE TECHNOLOGIES - (10:45-
11:45) 10:45 G-8-1 HIGH-PERFORMANCE, LOW-COST SIGE:C BICMOS TECHNOLOGY
(INVITED) B. TILLACK, D. KNOLL, B. HEINEMANN, K.-E. EHWALD, H. RIICKER,
R. BARLH, J. BAUER, K. BLUM, D. BOLZE, J. BORNGRABER, J. DREWS, G.
FISCHER, A. FOX, F. FUERNHAMMER, O. FURSCNKO, T. GRABOLLA, U. HAAK, W.
HOPPNER, K. KOPKE, D. KRLIGER, B. KUCK, R. KURPS, M. MARSCHMEYER, H.H.
RICHTER, D. SCHMIDT, P. SCHLEY, R. SCHOLZ, W. WINKLER, D. WOLANSKY,
H.-E. WULF, Y. YAMAMOLO AND P. ZAUMSEIL, IHP, GERMANY 906 11:15 G-8-2
BASE CURRENT CONTROL IN LOW VUE OPERATED SIGEC HETEROJUNCTION BIPOLAR
TRANSISTORS USING SIGE- CAP STRUCTURE AND HIGH CARBON CONTENT BASE T.
SAITOH, T. KAWASHIMA,Y KANZAWA, J. SATO-IWANAGA, K. IDOLA, T. TAKAGI, T.
OHNISHI, K. YUKI, T. SANO AND S. SAWADA, MATSUSHITA ELECTRIC INDUSTRIAL
CO., LTD., JAPAN 908 11:30 G-8-3 ALOW POWER SIGE MICROMIXER FOR
2.4/5.2/5.7GHZ MULTI-BAND WLAN APPLICATIONS C.Y WANG1, H.W. CHIU1, H.C.
CHEN1, S.S. LU1 AND C.C. MENG2, NATIONAL TAIWAN UNIV. AND 2NATIONAL
CLIIAO-TUNG UNIV., TAIWAN 910 XLVI G-9: SIGE/III-V/III-N DEVICES AND
CIRCUITS FOR WIRELESS AND OPTICAL COMMUNICATIONS - GAN DEVICES - (13:30-
14:45) 13:30 G-9-1 GAN-BASED MICROWAVE POWER DEVICES:A SURVEY ON THE
ACTIVITIES IN EUROPE (INVITED) J. WIIRFL, FERDINAND-BRAUN-INSTITUT FIB-
HOCJISTFRECPIENZTECHNIK, GERMANY 912 14:00 G-9-2L NON-RECESSED-GATE
ENHANCEMENT-MODE AIGAN/GANHEMTS WITH HIGHRFPERFORMANCE A.
ENDOH1,YYAMASHITA1, K. IKEDA1, M. HIGASHIWAKI2, K. HIKOSAKA .T. MATSUI2,
S. HIYAMIZU3 AND T. MIMURA , FUJITSU LABS LTD., -COMMUNICATIONS
RESEARCH LAB AND OSAKA UNIV., JAPAN 914 14:15 G-9-3 AIGAN/GAN POWERHEMTS
USING SURFACE-CHARGE-CONTROLLED STRUCTURE WITH RECESSED OHMIC TECHNIQUE
M. KANAMURA1, T. KIKKAWA1, N. ADACHI2, T. KIMURA1, S. YOKOGAWA2, M.
NAGAHARA2, N. HARA AND K. JOSHIN1, FUJITSU LABS LTD. AND2FUJITSU
QUANTUM DEVICES LTD., JAPAN 916 14:30 G-9-4 ALGAN/GAN/GRADED-AIGAN
DOUBLE-HETEROSTRUCTURE HEMTS Y. ZHOU, R. CHU , K.J. CHEN AND K.M. LAU,
HONG KONG UNIV. OFSCIENCE ANDTECLMOLOGY, HONG KONG 918 G-10:
SIGE/III-V/III-N DEVICES AND CIRCUITS FORWIRELESS AND OPTICAL
COMMUNICATIONS - HIGH VOLTAGE DEVICES-(15:00- 16:00) 15:00 G-10-1
DEVELOPMENT OFAIGAN/GAN POWERHFET FOR THE APPLICATION OFAN INVERTER
CIRCUIT (INVITED) S. YOSHIDA, YOKOLIAMAR&D LABS, TLIEFURUKAWAELECTRIC
CO.. LTD.,JAPAN 920 15:30 G-L0-2 SI/SIGE HETEROJUNCTION COLLECTOR FOR
LOW LOSS OPERATION OF CARRIER STOREDTRENCH-GATE BIPOLAR TRANSISTOR T.
KUDOH ANDT. ASANO, KYUSHU INST, OFTECHNOLOGY, JAPAN 922 15:45 G-10-3
DESIGN AND DEMONSTRATION OFHIGH BREAKDOWN VOLTAGEGAN-HEMT USING FIELD
PLATE STRUCTURE FOR POWER ELECTRONICS APPLICATIONS W. SAITO, Y. TAKADA,
M. KURAGUCHI, K. TSUDA, I. OMURA AND T. OGURA, TOSHIBA CORP., JAJ:AN
....924 XLVII
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| spelling | International Conference on Solid State Devices and Materials 2003 Tokio Verfasser (DE-588)5561534-X aut Extended abstracts of the 2003 International Conference on Solid State Devices and Materials September 16 - 18, 2003, Tokyo, Keio Plaza Inter-Continental Tokyo sponsored by the Japan Society of Applied Physics. Technical co-sponsored by IEEE Electron Devices Society Tokyo Publication Office, Inter Group Corp. 2003 XLVII, 950 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Literaturangaben Integrierte Schaltung (DE-588)4027242-4 gnd rswk-swf (DE-588)1071861417 Konferenzschrift 2003 Tokyo gnd-content Integrierte Schaltung (DE-588)4027242-4 s DE-604 Ōyō-Butsuri-Gakkai Sonstige (DE-588)20046-3 oth IEEE Electron Devices Society Sonstige (DE-588)121920-0 oth http://www.gbv.de/dms/tib-ub-hannover/376436689.pdf lizenzfrei Inhaltsverzeichnis GBV Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=018659146&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Extended abstracts of the 2003 International Conference on Solid State Devices and Materials September 16 - 18, 2003, Tokyo, Keio Plaza Inter-Continental Tokyo Integrierte Schaltung (DE-588)4027242-4 gnd |
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| title | Extended abstracts of the 2003 International Conference on Solid State Devices and Materials September 16 - 18, 2003, Tokyo, Keio Plaza Inter-Continental Tokyo |
| title_auth | Extended abstracts of the 2003 International Conference on Solid State Devices and Materials September 16 - 18, 2003, Tokyo, Keio Plaza Inter-Continental Tokyo |
| title_exact_search | Extended abstracts of the 2003 International Conference on Solid State Devices and Materials September 16 - 18, 2003, Tokyo, Keio Plaza Inter-Continental Tokyo |
| title_full | Extended abstracts of the 2003 International Conference on Solid State Devices and Materials September 16 - 18, 2003, Tokyo, Keio Plaza Inter-Continental Tokyo sponsored by the Japan Society of Applied Physics. Technical co-sponsored by IEEE Electron Devices Society |
| title_fullStr | Extended abstracts of the 2003 International Conference on Solid State Devices and Materials September 16 - 18, 2003, Tokyo, Keio Plaza Inter-Continental Tokyo sponsored by the Japan Society of Applied Physics. Technical co-sponsored by IEEE Electron Devices Society |
| title_full_unstemmed | Extended abstracts of the 2003 International Conference on Solid State Devices and Materials September 16 - 18, 2003, Tokyo, Keio Plaza Inter-Continental Tokyo sponsored by the Japan Society of Applied Physics. Technical co-sponsored by IEEE Electron Devices Society |
| title_short | Extended abstracts of the 2003 International Conference on Solid State Devices and Materials |
| title_sort | extended abstracts of the 2003 international conference on solid state devices and materials september 16 18 2003 tokyo keio plaza inter continental tokyo |
| title_sub | September 16 - 18, 2003, Tokyo, Keio Plaza Inter-Continental Tokyo |
| topic | Integrierte Schaltung (DE-588)4027242-4 gnd |
| topic_facet | Integrierte Schaltung Konferenzschrift 2003 Tokyo |
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