Extended abstracts of the 2001 International Conference on Solid State Devices and Materials: September 26 - 28, 2001, Tokyo, Diamond Hotel
Gespeichert in:
| Körperschaft: | |
|---|---|
| Format: | Tagungsbericht Buch |
| Sprache: | English |
| Veröffentlicht: |
Tokyo
Business Center for Academic Societies Japan
2001
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| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis Inhaltsverzeichnis |
| Beschreibung: | Literaturangaben |
| Beschreibung: | XXXVIII, 693 S. Ill., graph. Darst. |
| ISBN: | 489114016X |
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| adam_text | EXTENDED ABSTRACTS OF THE 2001 INTERNATIONAL CONFERENCE ON SOLID STATE
DEVICES AND MATERIALS SEPTEMBER 26-28, 2001 TOKYO DIAMOND HOTEL
SPONSORED BY THE JAPAN SOCIETY OF APPLIED PHYSICS TECHNICAL COSPONSORED
BY IEEE ELECTRON DEVICES SOCIETY IN COOPERATION WITH THE INSTITUTE OF
ELECTRONICS, INFORMATION AND COMMUNICATION ENGINEERS IEEEJAPAN CHAPTER
IEEETOKYO SECTION THE INSTITUTE OF ELECTRICAL ENGINEERS OF JAPAN THE
ELECTROCHEMICAL SOCIETY OF JAPAN THE JOURNAL OF THE INSTITUTE OF IMAGE
INFORMATION AND TELEVISION ENGINEERS CONTENTS WEDNESDAY, SEPTEMBER 26
DIAMOND HALL 9:45 (1) 10:30 (2) 11:15 (3) ROOMA PL: OPENING SESSION
(9:30-12:00) 9:30 (0) WELCOME ADDRESS AND AWARD PRESENTATION, Y.
HORIIKE, IIIV. OF TOKYO, ORGANIZING COMMITTEE CHAIRPERSON WEBTOP
COLLABORATION AND SEMICONDUCTOR INDUSTRY (PLENARY) S. KOHYAMA, TOSHIBA,
JAPAN 2 PROSPECTS OF SI ULSI DEVICES FOR THE NEXT TEN YEARS (PLENARY) Y.
TAUR, IBM, USA 4 NANOTECHNOLOGY STRATEGY AND GRAND CHALLENGES IN U.S
(PLENARY) M.C. ROCO, NSF, USA 6 A-L: SILICON PROCESS/MATERIALS
TECHNOLOGIES I (13:00-15:10) 13:00 (1) RECENT PROGRESS IN HIGH-K
DIELECTRIC FILMS FOR ULSIS (INVITED) S.I. LEE, SAMSUNG ELECTRONICS,
KOREA 8 13:30 (2) PERIODIC MESOPOROUS SILICATE GLASS AS LOW-K THIN FILM
Y. OKU, A. KAMISAWA, N. NISHIYAMA* AND K. UEYAMA*,ROHMAND *OSAKA UNIV.,
JAPAN 10 13:50 (3) GLOBAL PLANARIZATION WITH VISCOSITY CONTROL FOR AN
ADVANCED STP PROCESS N. SATO, K. MACHIDA, M. YANO*, K. KUDOU* AND H.
KYURAGI,NTT AND *NTT-AT, JAPAN 12 14:10 (4) DISHING-FREE CU CHEMICAL
MECHANICAL POLISHING PROCESS BASED ON ENDPOINT DETECTION WITH LASER BEAM
Y. TOKUYAMA, H. OGAWA, M. YANAGISAWA*, J. KIKUCHI**, H. NAKAGAWA*** AND
Y. HORIIKE, UNIV. OFTOKYO, *SPEEDFAM, **AXIOMATEC AND ***MATSUSHITA
ELECTRIC, JAPAN 14 14:30 (5) CMP USING FIXED ABRASIVE TOOL (FX-CMP) FOR
DIELECTRIC PLANARIZATION S. KATAGIRI, K. YASUI, Y. KAWAMURA, U.
YAMAGUCHI, M. NAGASAWA, F. KANAI, R. KAWAI, M. TOKUDA, S. MORIYAMA* AND
N. YAMADA**, HITACHI, INST, OF TECHNOLOGISTS AND **NIHON TOKUSHU KENTO,
JAPAN 16 14:50 (6) A STUDY ON RECLAIMED PHOTORESIST DEVELOPER USING AN
ELECTRODIALYSIS METHOD H. SUGAWARA, Y. TAJIMA* AND T. OHMI, TOHOKU UNIV.
AND *ORGANO, JAPAN 18 A-2: SILICON PROCESS/MATERIALS TECHNOLOGIES II
(15:15-17:55) 15:15 (1) RUTHENIUM FILM ETCHING AND CLEANING PROCESS
USINGCERIUMAMMONIUM NITRATE (CAN)- NITRIC ACID H. AOKI, K. WATANABE, T.
IIZUKA, N. ISHIKAWA* AND K. MORI*, NEC AND *KANTO CHEMICAL, JAPAN 20
15:35 (2) SPIN-DRYING WITH C02 GAS PURGE FOR 0.13 ^M DRAM S CONTACT
PROCESS Y. OGAWA, H. OKUCHI, H. TOMITA, K. MIYAZAKI, K. TAKASE AND S.
NADAHARA, TOSHIBA, JAPAN 22 15:55 (3) THE EFFECT OFORGANIC
CONTAMINATIONS MOLECULAR WEIGHTS IN THE CLEANROOM AIR ON MOS DEVICES
DEGRADATION*A CONTROLLED LAMINAR AIR FLOW EXPERIMENT T. OHKAWA, Y.
WAKAYAMA, S. KOBAYASHI*, S. SUGAWA, H. AHARONI AND T. OHMI, TOHOKU UNIV.
AND *TAISEI, JAPAN 24 16:15 (4) IMPACT OF GATE ETCH DAMAGE AND PROFILE
IN HIGH DENSITYDRAM CELL I.-G. KIM, J.-W. BAE, J.-H. CHOY, N.-S. KIM,
Y.-W. KWEON, S.-K. CHOI, S.-C. KIM, J.-S. PARK AND J.-B. KIM, HYNIX
SEMICONDUCTOR, KOREA 26 XVI 16:35 (5) EFFECT OF POLY METAL GATE ETCH
POST-CLEANING ON THE TAIL DISTRIBUTION OFDRAM DATA RETENTION TIME N.-S.
KIM, I.-G. KIM, J.-H. CHOY, S.-K. CHOI, J.-B. CHOI, Y.-W. KWEON, S.-C.
KIM, J.-S. PARK AND J.-B. KIM, HYNIX SEMICONDUCTOR, KOREA 28 16:55 (6) A
THERMALLY ROBUST TI-RICH TINX CONTACT METALLIZATION REALIZING AN
INTERCONNECT SYS TEM SUITABLE TO 0.10-/MI DRAMS AND BEYOND I. ASANO, Y.
NAKAMURA, H. AOKI*, N. FUKUDA*, S. YAMADA AND T. SEKIGUCHI, ELPIDA
MEMORYAND *HITACHI, JAPAN 30 17:15 (7) 240-NM PITCH ALUMINUM
INTERCONNECTS FORMATION BYUHF-ECR PLASMA ETCHING INCOR PORATING TM BIAS
AND NOVEL-GAS CHEMISTRY N. KOFUJI, T. TSUTSUMI, E. MATSUMOTO, *K.
FUJIMOTO, N. ITABASHI, M. IZAWA, T. FUJII AND S. TACHI, HITACHI AND
*HITACHI TECHNO ENG., JAPAN 32 17:35 (8) FILLING OF TUNGSTEN INTO DEEP
TRENCH USING TIME-MODULATION CVD METHOD Y. IGARASHI, T. MOROOKA, Y.
YAMADA, T. NAKAMURA, K.W. LEE*, K.T. PARK, H. KURINO AND M. KOYANAGI,
TOHOKU UNIV. AND VST, JAPAN 34 ROOM B B-L: SYSTEM-LEVEL INTEGRATION AND
PACKAGING TECHNOLOGIES I (13:30-15:30) 13:30 (1) ISSUES OF CURRENT LSI
TECHNOLOGY AND AN EXPECTATION FOR NEW SYSTEM-LEVEL INTEGRATION (INVITED)
T. SAKURAI, UNIV. OFTOKYO, JAPAN 36 14:00 (2) THREE-DIMENSIONAL
INTEGRATION OF FULLY DEPLETED SOI DEVICES T. MOROOKA, T. NAKAMURA, Y.
YAMADA, Y. IGARASHI, K.W. LEE*, K.T. PARK, H. KURINO AND M. KOYANAGI
TOHOKU UNIV. AND *JST, JAAPN 38 14:15 (3) ELECTROPLATING CU FILLING
STUDYFORTHOROUGH ELECTRODE IN SILICON WAFER OFTHREE DIMEN SIONAL LSI
CHIP STACKING M. TOMISAKA, H. YONEMURA, M. HOSHINO AND K. TAKAHASHI,
ASET, JAPAN 40 14:30 (4) FEASIBILITY
OFDIRECTBONDINGBETWEENCMP-CUFILMSATROOM TEMPERATUREFOR BUMPLESS
INTERCONNECT A. SHIGETOU, N. HOSODA, T. ITOH AND T. SUGA, UNIV. OF
TOKYO, JAPAN 42 14:45 (5) NEW PLASMA SURFACE TREATMENT FOR WIRE BONDING
PROCESS -EFFECT OF SUBLIMATION WITH ALKYI GROUP RADICALS- K. HONSHO, H.
TERAI, H. YAMAZOE, T. TATSUTA AND O. TSUJI, SAMCO INTERNATIONAL, JAPAN
44 15:00 (6) OXYGEN PLASMA ACTIVATED SILICON DIRECT BONDING INPECVD MODE
T.H. KIM, M.M.R. HOWLADER, T. ITOH AND T. SUGA, UNIV. OF TOKYO, JAPAN 46
15:15 (7) INFLUENCE ON ELECTRICAL CHARACTERISTIC OF DIRECT AU-BUMPING ON
MOSFET N. WATANABE AND T. ASANO, KYUSHU INST, OF TECHNOL., JAPAN 48 B-2:
SYSTEM-LEVEL INTEGRATION AND PACKAGING TECHNOLOGIES II (15:45-17:00)
15:45 (1) RECENT ADVANCES IN SOP INTEGRATION (INVITED) V. SUNDARAM, S.
DALMIA, J. HOBBS, S. BHATTACHARYA, M. SWAMINATHAN, G. WHITE AND R.
TUMMALA, GEORGIA INST, OF TECHNOL. USA 50 16:15 (2) INTERCONNECT LENGTH
DISTRIBUTION IN SI SYSTEM ULSI N. TAKAGI, H. SHINOKI, T. TSUSHIMA, Y
.YOKOYAMA AND K. MASU, TOKYO INST, OF TECHNOL., JAPAN 54 16:30 (3)
EFFECTS OF ON-CHIP CAPACITOR ON SWITCHING NOISE AND RADIATED EMISSION T.
SUDO, K. NAKANO, J. KUDO AND S. HAGA, ASET, JAPAN 56 16:45 (4) GHZ CLOCK
DISTRIBUTION USING TRANSMISSION LINE INTERCONNECT AND CMOS DIFFERENTIAL
DRIVER CIRCUIT IN SI ULSI Y. YOKOYAMA, T. TSUSHIMA, H. SHINOKI, N.
TAKAGI AND K. MASU, TOKYO INST, OF TECHNOL., JAPAN 58 LB-1: LATE NEWS
(SYSTEM-LEVEL INTEGRATION AND PACKAGING TECHNOLOGIES) (17:00-17:15)
17:00 (1) MICRO BUMP INTERCONNECTION TECHNOLOGIES IN 20 FUN PITCH ON 3D
SYSTEM IN PACKAGE T. MORIFUJI, Y. TOMITA, R. KAJIWARA AND K. TAKAHASHI,
ASET, JAPAN 60 XVU ROOM C C-L: SIGE/III-V/III-N DEVICES AND CIRCUITS FOR
WIRELESS AND OPTICAL COMMUNICATIONS I (13:30-15:15) 13:30 (1) RF POWER
PERFORMANCE OFALGAN/GAN HETEROJUNCTION FIELD EFFECT TRANSISTORS ON
SAPPHIRE SUBSTRATE (INVITED) H. MIYAMOTO, Y. ANDO, Y. OKAMOTO, N.
HAYAMA, T. NAKAYAMA, K. KASAHARA, Y. OHNO*, AND M. KAZUHARA, NEC AND
*UNIV. OF TOKUSHIMA, JAPAN 62 14:00 (2) STUDIES OFALGAN/GAN HIGH
ELECTRON MOBILITY TRANSISTORS ON SEMI-INSULATING SILICON CARBIDE AND
SAPPHIRE SUBSTRATES S. ARULKUMARAN, T. EGAWA, H. ISHIKAWA AND T. JIMBO,
NAGOYA INST, OF TECHNOL., JAPAN 64 14:15 (3) ELMINATION OFKINK PHENOMENA
IN INP-BASEDHEMTS BY FORMINGDIRECT OHMICCONTACTS IN THE CHANNEL K.
SAWADA, T. ARAI, T. TAKAHASHI AND N. HARA, FUJITSU LABS., JAPAN 66 14:30
(4) INVESTIGATION OF LOW-FREQUENCY NOISE BEHAVIOR OF
INO.52ALO.48AS/INO.60GAO.40AS META- MORPHIC HIGH ELECTRON MOBILITY
TRANSISTORS J.H. KIM, H.-S. YOON*, J.-H. LEE*, K.H. LEE* AND J.-I. SONG,
KJIST AND *ETRI, KOREA 68 14:45 (5) THEORETICAL AND EXPERIMENTAL STUDY
ON THERMAL CHARACTERISTICS OF INP/INGAAS SINGLE HETEROJUNCTION BIPOLAR
TRANSISTORS T. KIM, Y. SONG, H.-M. PARK, M. KIM, S. HONG AND K. YANG,
KAIST, KOREA 70 15:00 (6) A TRIAL OFDUAL EMITTER HBT FORMMIC POWER
AMPLIFIER APPLICATION Y.S. LEE AND C.S. PARK, INFORMATION AND
COMMUNICATIONS UNIV., KOREA 72 C-2: SIGE/III-V/III-N DEVICES AND
CIRCUITS FOR WIRELESS AND OPTICAL COMMUNICATIONS II (15:45-17:45) 15:45
(1) EVOLUTION AND CURRENT STATUS OFRF SEMICONDUCTOR DEVICES (INVITED)
J.J. LIOU AND F. SCHWIERZ*, UNIV. OF CENTRAL FLORIDA, USA AND
*TECHNISCHE UNIV. ILMENAU, GERMANY 74 16:15 (2) A LOW DISTORTION PHEMT
WITH NEWLY DEVELOPED COMPOSITE CHANNEL STRUCTURE Y. TATENO, M. NAGAHARA,
J. NIKAIDO, T. IGARASHI, H.A. EBRAHIM, Y. NAKASHA* AND K. JOSHIN,
FUJITSU QUANTUM DEVICES AND *FUJITSU LABS., JAPAN 76 16:30 (3) A2W HIGH
EFFICIENCY 4-12GHZ GAAS HFET MMIC POWER AMPLIFIER H. YUKAWA, M. NII, Y.
TSUKAHARA, Y. ITOH AND Y. IKEDA, MITSUBISHIELECTRIC, JAPAN 78 16:45 (4)
ALGAAS/GAASPHEMT MMIC BROADBAND POWER AMPLIFIER FROM 17GHZ TO 36GHZ FOR
K/KA-BAND APPLICATIONS Y.C. LEE AND C.S. PARK, INFORMATION AND
COMMUNICATIONS UNIV., KOREA 80 17:00 (5) KU-BAND MULTI-STAGEMMIC
LOW-NOISE AMPLIFIER LOADED WITH DOUBLE GAIN-EQUALIZING CIRCUITS K.
YAMANAKA, K. SUGAYA, T. YAMAGUCHI, N. TANAHASHI, Y. ITOH AND T. TAKAGI,
MITSUBISHI ELECTRIC, JAPAN 82 17:15 (6) A ULTRA BROADBAND SPST GAASPIN
DIODE SWITCH WITH 30 DB ISOLATION AND 1.0DB INSER TION LOSS H. TAKASU,
F. SASAKI AND J. OZAKI, TOSHIBA, JAPAN 84 17:30 (7) RF INTEGRATED SPIRAL
INDUCTOR WITH DOUBLE-SIDED FERROMAGNETIC LAYERS M. YAMAGUCHI, M. BABA
AND K. ARAI, TOHOKU UNIV., JAPAN 86 ROOMD D-L: ADVANCED CONCEPTS IN
CIRCUITS AND SYSTEMS (13:30-15:20) 13:30 (1) BIO-INSPIRED VLSIS BASED ON
ANALOG/DIGITAL MERGED TECHNOLOGIES (INVITED) A. IWATA, T. MORIE ANDM.
NAGATA, HIROSHIMA UNIV., JAPAN 88 14:00 (2) A 1-D CMOSPWM CELLULAR
NEURAL NETWORK CIRCUIT AND RESISTIVE-FUSE NETWORK OPERA TION T. MORIE,
M. MIYAKE, M. NAGATA AND A. IWATA, HIROSHIMA UNIV., JAPAN 90 XVIN 14:20
(3) OPTIMIZING ASSOCIATIVE PROCESSOR ARCHITECTURE FOR INTELLIGENT
INTERNET SEARCH APPLICA TIONS H. XU, Y. MITA AND T. SHIBATA, UNIV. OF
TOKYO, JAPAN 92 14:40 (4) A HIGH-PERFORMANCE TIME-DOMAIN WINNER-TAKE-ALL
CIRCUIT EMPLOYING OR-TREE AR CHITECTURE K. ITO, M. OGAWA AND T.
SHIBATA, UNIV. OFTOKYO, JAPAN 94 15:00 (5) PHYSICAL RANDOM-NUMBER
GENERATOR USING SCHOTTKYMOSFET T. ASANO, Y. MAEDA, G. NAKAGAWA, ANDY.
ARIMA, KYUSHU INST, OFTECHNOL., JAPAN 96 D-2: LOW POWER AND HIGH
PERFORMANCE CIRCUITS (15:45-17:35) 15:45 (1) LOW POWER TECHNOLOGIES FOR
HIGH PERFORMANCE SYSTEMS (INVITED) T. KURODA, KEIO UNIV., JAPAN 98 16:15
(2) LOW-POWER DATA-PRESERVING COMPLEMENTARY PASS-TRANSISTOR-BASED
CIRCUIT FOR POWER- DOWN CIRCUIT SCHEME K.-T. PARK, T. MIZUKUSA, H.-S.
WON*, K.-M. CHOI*, J.-T. KONG*, H. KURINO AND M. KOYANAGI, TOHOKU UNIV.,
JAPAN AND *SAMSUNG, ELECTRONICS, KOREA 100 16:35 (3) AN
INDEPENDENT-SOURCE OVERDRIVEN SENSE AMPLIFIER FOR MULTI-GIGABITDRAMARRAY
R. TAKEMURA, T. SEKIGUCHI, H. FUJISAWA*, T. TAKAHASHI*, T. SAKATA AND M.
NAKAMURA*, HITACHI AND *ELPIDA MEMORY, JAPAN 102 16:55 (4) GAIN-BOOSTED
OPERATIONAL AMPLIFIER FORLOW SUPPLY VOLTAGE S. HATANAKA, T. OGAWA AND K.
TANIGUCHI, OSAKA UNIV., JAPAN 104 17:15 (5) ORIGIN OF CRITICAL SUBSTRATE
BIAS IN VARIABLE THRESHOLD VOLTAGECMOS T. INUKAI, H. IM AND T. HIRAMOTO,
UNIV. OF TOKYO, JAPAN 106 ROOME E-L: M-VLEDS AND DETECTORS (13:30-15:30)
13:30 (1) PRESENT AND FUTURE NITRIDE-BASED DEVICES (INVITED) H. AMANO,
S. KOMIYAMA AND I. AKASAKI, MEIJO UNIV., JAPAN 108 14:00 (2) HIGH
BRIGHTNESS GREEN LIGHT EMITTINGDIODE WITH CHARGE ASYMMETRIC
RESONANCETUNNEL ING STRUCTURE C.H. CHEN, Y.K. SU, S.J. CHANG, G.C.
CHI*, J.K. SHEU* AND J.F. CHEN, NATIONAL CHENGKUNG UNIV. AND *NATIONAL
CENTRAL UNIV., TAIWAN 110 14:15 (3) INTENSE ULTRAVIOLET
ELECTROLUMINESCENCE PROPERTIES OF THE HIGH-POWER INGAN-BASED LEDS
FABRICATED ON PATTERNED SAPPHIRE SUBSTRATES H. KUDO, K. MURAKAMI, R.
ZHENG, Y. YAMADA, T. TAGUCHI, K. TADATOMO*, H. OKAGAWA*, Y. OHUCHI*, T.
TSUNEKAWA*, Y. IMADA* AND M. KATO**, YAMAGUCHI UNIV., *MITSUBISHI CABLE
AND **STANLELEY ELECTRIC, JAPAN 112 14:30 (4) A P-DOWN INGAN/GANMQWLED
STRUCTURE GROWN BYMOVPE C.H. KO, S.J. CHANG, Y.K. SU, C.I. CHIANG*, W.J.
LIN*, W.H. LAN* AND Y.T. CHERNG*.NATIONAL CHENGKUNG UNIV. AND
*CHUNG-SHAN INST. OFSCI. & TECHNOL., TAIWAN 114 14:45 (5) PHOTOCURRENT
PROPERTIES OF ALGAN/GAN/ALGAN PHOTODETECTERS ON SI R.L. JIANG, Z.M.
ZHAO, P. CHEN, D.J. XI, B. SHEN, R. ZHANG AND Y.D. ZHENG, NANJING UNIV.,
CHINA 116 15:00 (6) INTERFACE PROPERTIES BETWEEN NI AND P-GAN STUDIED BY
PHOTOEMISSION SPECTROSCOPY Y. HAGIO, T. MARUYAMA*, Y. NANISHI*, K.
AKIMOTO, T. MIYAJIMA** AND S. KIJIMA**, UNIV. OF TSUKUBA, RITSUMEIKAN
UNIV. AND **SONY, JAPAN 118 15:15 (7) 10-16 URN BROADBAND
640X512GAAS/ALGAAS QUANTUM WELL INFRARED PHOTODETECTOR (QWIP) FOCAL
PLANE ARRAY S.D. GUNAPALA, S.V. BANDARA, J.K. LIU, S.B. RAFOL, J.M.
MUMOLO, F.M. REININGER, J.M. FASTENAU AND A.K. LIU, CALIFORNIA INST, OF
TECHNOL., USA 120 E-2: SPIN-ELECTRONICS MATERIALS (15:45-17:30) 15:45
(1) ELECTRIC FIELD CONTROL OF FERROMAGNETISM IN SEMICONDUCTORS (INVITED)
H. OHNO, TOHOKU UNIV., JAPAN 122 XIX 16:15 (2) PHOTO-CARRIER INDUCED
MAGNETISM IN III-V MAGNETIC ALLOY SEMICONDUCTOR HETEROSTRUC- TURES A.
OIWA, T. SLUPINSKIAND H. MUNEKATA*KANAGAWAACADEMY OFSCI. AND TECHNOL.
AND *TOKYO INST, OF TECHNOL., JAPAN 124 16:30 (3) CHARACTERIZATION OF
FERROMAGNETIC ELECTRODES FOR SPIN INJECTION INTO SEMICONDUCTOR USING
LOCAL HALL EFFECT J. NITTA, T. SCHAPERS*, H.B. HEERSCHE**, T. KOGA, Y.
SATO*** AND H. TAKAYANAGI NTT, JAPAN, *FORSCHUNGSZENTRUM JULICH,
GERMANY, **UNIV. OF GRONINGEN, THE NETERLANDS AND ***JAIST, JAPAN 126
16:45 (4) CONDITIONS FOR THE SPIN RECTIFICATION PHENOMENA PREDICTED FOR
SEMICONDUCTING TRIPLE BARRIER STRUCTURES IN THE PRESENCE OF RASHBA
SPIN-ORBIT COUPLING T. KOGA, J. NITTA, T. AKAZAKI AND H. TAKAYANAGI,
NTT, JAPAN 128 17:00 (5) MATERIAL DESIGN AND GROWTH OF ZINC-BLENDE
CRAS M. MIZUGUCHI, H. AKINAGA, T. MANAGO*, K. ONO,M. OSHIMA AND M.
SHIRAI**JRCAT, *UNIV. OF TOKYO AND **OSAKA UNIV., JAPAN 130 17:15 (6)
MAGNETIC AND OPTICAL PROPERTIES OF (GA,MN)N T. KONDO, H. OWA, S.
KUWABARA AND H. MUNEKATA, TOKYO INST, OF TECHNOL., JAPAN... 132 ROOMF
F-L: ADVANCED SILICON DEVICES AND DEVICE PHYSICS I (13:30-15:30) 13:30
(1) CARRIER TRANSPORT OF SIN GATE DIELECTRICS FOR DUAL-GATE CMOSFETS H.
FUKUI, M. TAKAYANAGI, S. MORI, T. SHIMIZU AND Y. TOYOSHIMA, TOSHIBA,
JAPAN ... 134 13:50 (2) SATURATION PHENOMENON OF STRESS INDUCED GATE
LEAKAGE CURRENT S. UENO, T. KUROI, A. TERAMOTO, H. UMEDA, Y. INOUE AND
M. INUISHI, MITSUBISHI ELECTRIC, JAPAN 136 14:10 (3) MONITORING
DEGRADATION OF SOURCE/DRAIN EXTENSION IN SUB-QUARTER-MICRON MOSFET S G.
CHEN, M.F. LI, X.M. LI AND X. YU* NATIONAL UNIV. OF SINGAPORE AND
*CHARTERED SEMICONDUCTOR MFG., SINGAPORE 138 14:30 (4) QUANTUM
MECHANICAL ANALYSIS OF ACCUMULATION LAYERS IN MOS STRUCTURES S. SAITO
AND K. TORII, HITACHI, JAPAN 140 14:50 (5) IMPACT OF TWO-DIMENSIONAL
STRUCTURE OFNMOSFETS ON DIRECT TUNNEL GATE CURRENT H. WATANABE, K.
MATSUZAWA AND S. TAKAGI, TOSHIBA, JAPAN 142 15:10 (6) A PHYSICALMODEL
FOR HOLE DIRECT TUNNELING CURRENTS THROUGH ULTRATHIN GATE DIELECTRICS IN
ADVANCED CMOS DEVICES Y.T. HOU, M.F. LI, W.H. LAI AND Y. JIN*, NATIONAL
UNIV. OFSINGAPOREAND *CHARTERED SEMICONDUCTOR, MANUFACTURING, SINGAPORE
144 F-2: ADVANCED SILICON DEVICES AND DEVICE PHYSICS II (15:45-17:35)
15:45 (1) SUB-50NM LOCAL CHANNEL MOSFETS BY SALVO PROCESS (INVITED)
C.-P. CHANG, S.N. ROGERS, H.-H. VOUNG, M.R. BAKER, C.S. PAI, F.P.
KLEMENS, W.W. TAI, M. BUDE, J.F. MINER, E.J. LLOYD, M. FREI, D.P.
MONROEW.M. MANSFIELD, T.W. SORSCH, A. KORNBLIT, J.T.-C. LEE AND C.S.
RAFFERTY, AGERE SYSTEMS, USA 146 16:15 (2) 80NM HIGH PERFORMANCECMOSFET
WITHLOW GATE LEAKAGE CURRENT USING CONVENTION AL THIN GATE NITRIC OXIDE
K. OTA, H. SAYAMA, H. ODA, Y. INOUE, M. INUISHI, H. NAKAOKA*, K.
NAKANISHI*, G. FUSE*, A. KAJIYA* AND M. OGURA*, MITSUBISHI ELECTRIC AMD
*MATSUSHITA ELECTRIC, JAPAN 148 16:35 (3) ELEVATED EXTENSION STRUCTURE
FOR 35NM MOSFETS Y. KAMATA, M. ONO AND A. NISHIYAMA, TOSHIBA, JAPAN 150
16:55 (4) A T-GATEMOSFET WITH REDUCED CHANNEL LENGTH BY INVERTED
SIDEWALLS FOR SUB-100NM RF APPLICATIONS K.H .TO AND J.C.S. WOO, UNIV.
OFCA, USA 152 17:15 (5) SIDE-GATE DESIGN FOR 50NM ELECTRICALLY INDUCED
SOURCE/DRAIN MOSFETS W.Y. CHOI, B.Y. CHOI, J.D. LEE AND B.-G. PARK,
SEOUL NATIONAL UNIV., KOREA 154 XX THURSDAY, SEPTEMBER 27 ROOM A A-3:
SILICON PROCESS/MATERIALS TECHNOLOGIES III (9:00-10:20) 9:00 (1)
ANALYSIS OFNON-UNIFORM BORON PENETRATION OFNITRIDED OXIDE IN PMOSFETS
CONSIDER ING TWO-DIMENSIONAL NITROGEN DISTRIBUTION T. AOYAMA, H.
FUKUTOME, S. OHKUBO, K. SUZUKI, H, TASHIRO, Y. TADA, H. ARIMOTO, K.
HORIUCHI, S. HASEGAWA* AND H. NAKASHIMA* FUJITSU LABS, AND *OSAKA UNIV.,
JAPAN 156 9:20 (2) INTERFACE STRUCTURES GENERATED BY NEGATIVE-BIAS
TEMPERATURE INSTABILITY IN SI/SI02 AND SI/SIOXNY INTERFACES J. USHIO, K.
KUSHIDA-ABDELGHAFAR AND T. MARUIZUMI, HITACHI, JAPAN 158 9:40 (3)
ULTRATHIN NITRIDE/OXIDE STACK GATE DIELECTRIC (14.9A TO 20.3A) FOR
SUB-0.13 NM CMOS AND BEYOND W.H. LIN, K.L. PEY, Z. DONG*, S.Y.M. CHOOI*,
M.S. ZHOU*, T.C. ANG*, C.H. ANG* AND W.S. LAU*, NATIONAL UNIV.
OFSINGAPORE AND ^CHARTERED SEMICONDUCTORMFG., SINGAPORE 160 10:00 (4)
IMPROVED J-E CHARACTERISTICS AND STRESS INDUCED LEAKAGE CURRENTS (SILC)
IN OXYNITRIDE FILMS GROWN AT 400C BY MICROWAVE-EXCITED HIGH-DENSITY
KR/02/NH3 PLASMA K. OHTSUBO, Y. SAITO, M. HIRAYAMA, S. SUGAWA, H.
AHARONI AND T. OHMI, TOHOKU UNIV., JAPAN 162 (5) WITHDRAWN A-4: SILICON
PROCESS/MATERIALS TECHNOLOGIES IV (10:45-12:25) 10:45 (1) HIGHLY
RELIABLEMOS TRENCH GATE FET BY OXYGEN RADICAL OXIDATION N. UEDA, Y.
SAITO*, M. HIRAYAMA*, Y. YAMAUCHI, S. SUGAWA* ANDT. OHMI* SHARP AND
*TOHOKU UNIV., JAPAN 164 11:05 (2) REPEATED SPIKE TECHNOLOGY EMPLOYED IN
RAPID THERMAL PROCESSING C.-C. HONG, C.-Y. CHANG, C.-H. CHEN AND J.-G.
HWU, NATIONAL TAIWAN UNIV., TAIWAN 166 11:25 (3) IMPROVED
TRANSCONDUCTANCE AND GATE INSULATOR INTEGRITY OFMISFETS WITH SI3N4 GATE
DIELECTRIC FABRICATED BY MICROWAVE-EXCITED HIGH-DENSITY PLASMA AT 400C
I. OHSHIMA, H. SHIMADA*, S. NAKAO, W. CHENG, *Y. ONO, M. HIRAYAMA, S.
SUGAWA, H. AHARONI AND T. OHMI, TOHOKU UNIV. AND *SEIKO EPSON, JAPAN 168
11:45 (4) A COMPARATIVE EXAMINATION OF POLYOXIDE FILMS PERFORMANCE GROWN
BY CONVENTIONAL DRY THERMAL (900C) OR PLASMAASSISTED (400C) OXIDATION
TECHNIQUES F. IMAIZUMI, T. HAMADA, S. SUGAWA, H. AHARONI AND T. OHMI,
TOHOKU UNIV., JAPAN... 170 12:05 (5) A STUDY ON THE GERMANO-SILICIDE
FORMATION IN THE NI/SIUGE* SYSTEM FORCMOS DEVICE APPLICATIONS H.-J.
CHOI, D.-H. KO, J.-H. KU*. C.-J. CHOI*, S. CHOI*, K. FUJIHARA*, H.-K.
KANG* AND C.-W. YANG** YONSEI UNIV., ^SAMSUNG ELECTRONICS AND
**SUNGKYUNKWAN UNIV., KOREA 172 LA-1: LATE NEWS (13:40-14:10) 13:40 (1)
DIRECT GROWTH OFSINGLE CRYSTALLINE CE02 HIGH-K GATE DIELECTRICS Y.
NISHIKAWA, N. FUKUSHIMA AND N. YASUDA, TOSHIBA, JAPAN 174 13:55 (2)
INFLUENCE OF ORGANIC CONTAMINATION ON RELIABILITY AND TRAP
GENERATIONINMOS DEVICES T. YOSHINO, S. YOKOYAMA, T. FUJII*, K.
SHIBAHARA, A. NAKAJIMA, T. KIKKAWA, H. SUNAMI AND Q.D.M. KHOSRU,
HIROSHIMA UNIV. AND *EBARA RES., JAPAN 176 A-5: SILICON
PROCESS/MATERIALS TECHNOLOGIES V (14:10-15:30) 14:10 (1) ULTRATHIN
NITRIDED-NANOLAMINATE (A^/ZROJ/ALA) FOR GATE DIELECTRICS APPLICATION S.
JEON, H. YANG, H. CHANG, D.-G. PARK*, K.-Y. LIM*. I.-S. YEO* H. KOH*,
H.W. YEOM** AND H. HWANG, KIST, *HYNIX SEMICONDUCTORAND **YONSEI UNIV.,
KOREA M XXI 14:30 (2) NEW CHARGE CONTROL TECHNOLOGY BY STENCIL MASK ION
IMPLANTATION T. SHIBATA, K. SUGURO, K. SUGIHARA, K. OKUMURA, T.
NISHIHASHI*, K. KASHIMOTO*, J. FUJIYAMA* AND Y. SAKURADA*, TOHSIBA AND
*ULVAC, JAPAN 180 14:50 (3) FLASH LAMP ANNEAL TECHNOLOGY FOR EFFECTIVELY
ACTIVATING ION IMPLANTED SI T. ITO, T. IINUMA, A. MURAKOSHI, H. AKUTSU,
K. SUGURO, T. ARIKADO, K. OKUMURA, M. YOSHIOKA*, T. OWADA*, Y. IMAOKA**,
H. MURAYAMA** AND T. KUSUDA**, TOSHIBA, USHIO AND **DAINIPPON SCREEN,
JAPAN 182 15:10 (4) INFLUENCE OF EXTENSION FORMATION PROCESS ON INDIUM
HALO PROFILE D. ONIMATSU AND K. SHIBAHARA, HIROSHIMA UNIV., JAPAN 184
A-6: SILICON PROCESS/MATERIALS TECHNOLOGIES VI (15:45-17:45) 15:45 (1)
MANUFACTURABLE 0.13PM DRAM TECHNOLOGY FOR 512M DDRDRAM Y.-H. KIM, D.-Y.
KIM, J.-B. PARK, S.-H. YI, B.-S. HONG, D.-G. YIM, J.-K. KIM, J.-M. CHOI,
D.-D. LEE AND G.-H. YOON, HYNIX SEMICONDUCTOR, KOREA 186 16:05 (2)
WITHDRAWN 16:25 (3) A TECHNOLOGY FOR SUPPRESSING INTER-LAYER DIELECTRIC
CRACK IN A HIGH DENSITYDRAM B.C. KIM, D.H. KIM,W.K. HUH, M.K. BAE, J.W.
NAM, S.C. LEE, J.S. KIM, T.K. KIM, Y.J. PARK, J.S. PARK AND K.N. KIM,
SAMSUNG ELECTRONICS, KOREA 188 16:45 (4) ADVANCED RETROGRADE WELL
TECHNOLOGY FOR 90-NM-NODE EMBEDDED SRAM BY HIGH- ENERGY PARALLEL BEAM T.
YAMASHITA, M. KITAZAWA, Y. KAWASAKI, H. TAKASHINO, T. KUROI, Y. INOUE
AND M. INUISHI, MITSUBISHI ELECTRIC, JAPAN 190 17:05 (5) SOURCE/DRAIN
DOPANT DEACTIVATION AND JUNCTION DEGRADATION BY ENERGETIC IONS IN PLASMA
PROCESSES Y. TAMAI AND T. OHMI, TOHOKU UNIV., JAPAN 192 17:25 (6) NEW
STI SCHEME TO COMPENSATE GATE OXIDE THINNING AT STI CORNER EDGE FOR
THEDEVICES USING THICK DUAL GATE OXIDE S.-H. KIM, S.-H. KIM, S.-E. KIM,
M.-S. KIM, J.-H. PARK AND E.-S. KIM, SAMSUNG ELECTRONICS, KOREA 194 ROOM
B B-3: CHARACTERIZATION (9:00-10:30) 9:00 (1) HIGH-SPACIAL-RESOLUTION
MICROANALYSIS USING MICORCALORIMETER EDS (INVITED) S.W. NAM, NIST, USA
196 9:30 (2) HIGH-RESOLUTION STRESS MAPPING OF 100-NM DEVICES MEASUREDBY
STRESS TEM M. KOGUCHI, K. NAKAMURA AND K. UMEMURA, HITACHI, JAPAN 198
9:50 (3) ADECOUPLED CAPACITANCE MEASUREMENT TECHNIQUE FOR
CHARACTERIZATION OFSMALL-GEOMET RYMOSFETS WITH ULTRA-THIN GATE OXIDES
C.-H. LIU, M.T. LEE, Y.-C. CHENG AND J. CHEN, UNITED MICROELECTRONICS,
TAIWAN 200 10:10 (4) EXTRACTION OF INTERFACE STATE DENSITY IN ULTRA-THIN
GATE DIELECTRICS: A COMPOSITION METHOD OF IDEALCV CURVES IN
HIGH-FREQUENCY CV ANALYSIS N. YASUDA AND H. SATAKE, TOSHIBA, JAPAN 202
B-4: GATE OXIDE RELIABILITY (10:45-12:25) 10:45 (1) ENHANCED
NEGATIVE-BIAS-TEMPERATURE INSTABILITY OF P-CHANNEL MOSFET BY PLASMA
CHARGING DAMAGE D.-Y. LEE, H.-C. LIN*, M.-F. WANG, M.-Y. TSAI, T.-Y.
HUANG AND T. WANG, NATIONAL CHIAO TUNG UNIV. AND NATIONALNANO DEVICE
LABS., TAIWAN 204 11:05 (2) MECHANISM OF THRESHOLD VOLTAGE SHIFT (AVUJ
CAUSED BY NEGATIVE BIAS TEMPERATURE IN STABILITY (NBTI) IN DEEP
SUB-MICRON PMOSFETS C.H. LIU, M.T. LEE, C.-Y. LIN, J. CHEN. K.
SCHRUEFER*, T. SCHIML*, A.A. KATSETOS**, Z. YANG**, N. ROVEDO**, T.B.
HOOK** AND C. WANN**, UNITEDMICROELECTRONICS, INFINEON TECHNOLOGIES AND
**IBM, TAIWAN 206 XXN 11:25 (3) POST-SOFT-BREAKDOWN CHARACTERISTICS OF
DEEP SUB-MICRONNMOSFETS WITH ULTRA-THIN GATE OXIDE D.-Y. LEE, H.-C.
LIN*, M.-Y. TSAI, T.-Y. HUANG AND T. WANG, NATIONAL CHIAO TUNG UNIV. AND
NATIONALNANO DEVICE LABS., TAIWAN 208 11:45 (4) ANALYSIS
OFOXIDEVOLTAGEAND FIELD DEPENDENCE OFTIME-DEPENDENTDIELECTRICSOFTBREAK
DOWN IN ULTRATHIN GATE OXIDES W. MIZUBAYASHI, Y. YOSHIDA, S. MIYAZAKI
AND M. HIROSE*, HIROSHIMA UNIV. AND *AIST, JAPAN 210 12:05 (5)
CURRENT-VOLTAGE CHARACTERISTICS OF GATE OXIDES AFTER HARD BREAKDOWN T.
BEARDA, P.H. WOERLEE*, H. WALLINGA*, P.W. MERTENS AND M.M. HEYNS, IMEC,
BELGIUM AND *UNIV. OF TWENTE, THENETHERLANDS 212 B-5: MRAM/CONTACT
METALLIZATION (13:30-15:00) 13:30 (1) MAGNETIC TUNNEL JUNCTIONS AND
ARCHITECTURES FOR THEIR USE IN MAGNETIC RAMS* (INVITED) W.J. GALLAGHER,
D.W. ABRAHAM, S.L. BROWN, A. GUPTA, J. HUMMEL, R.H. KOCH, Y. LU, E.J.
O SULLIVAN, W. REOHR, R. ROBBERTAZZI, P.L. TROUILLOUD, P.M. RICE, K.P.
ROCHE, M.G. SAMANT, R.E. SCHEUERLEIN, S.S.P. PARKIN, H. HOENIGSCHMID*,
G. LEE*, J. NUETZEL* AND G. MUELLER*, IBM AND INFINEON TECHNOLOGIES,
USA 214 14:00 (2) INTRINSIC JUNCTION LEAKAGE BY CO IN-DIFFUSION DURING
COSI2 FORMATION CHARACTERIZED WITH DAMAGE FREE N+/P SILICON DIODES M.
TSUCHIAKI AND K. OHUCHI, TOSHIBA, JAPAN 216 14:20 (3) CHARACTERIZATION
OF THE CO-SILICIDE PENETRATION DEPTH INTO THE JUNCTION AREA H.-D. LEE,
K.-K. KANG*, M.-J. JANG**, J.-H. LEE**, S.-H.. PARK**, K.-M. LEE**,
K.-S. YOON**, J.-H. CHOI**, G.-S. PARK** AND Y.-J. PARK**, CHUNGNAM
NATIONAL UNIV., CHUNGBUKNATIONAL UNIV. AND **HYNIX SEMICONDUCTOR, KOREA
218 14:40 (4) ELECTRICAL PROPERTIES AND SOLID-PHASE REACTIONS IN
NI/SI(100) CONTACTS Y. TSUCHIYA, A. TOBIOKA, O. NAKATSUKA, H. IKEDA, A.
SAKAI, S. ZAIMAANDY. YASUDA, NAGOYA UNIV., JAPAN 220 B-6: OXIDATION AND
NITRIDATION (15:15-17:15) 15:15 (1) INTERFACIAL SILICON EMISSION IN DRY
OXIDATION -THE EFFECT OFH AND CI M. UEMATSU, H. KAGESHIMA AND K.
SHIRAISHI*,NTTAND UNIV. OFTSUKUBA., JAPAN.. .222 15:35 (2) ATOMIC-SCALE
DEPTH PROFILING OF OXIDES/SI(LLL) AND OXYNITRIDES/SI(100) INTERFACE T.
NAKAMURA, K. NISHIZAKI, K. TAKAHASHI, H. NOHIRA AND T. HATTORI, MUSASHI
INST, OF TECHNOL., JAPAN 224 15:55 (3) HIGH-RESOLUTION PHOTOELECTRON
SPECTROSCOPYOF INTERFACIALNITROGEN IN ULTRATHIN SIOXYNI- TRIDE FILMS M.
OSHIMA, J.H. OH, K. ONO, H. KIWATA, K. NAKAMURA, M. NIWA*, K. USUDA*, N.
HIRASHITA*, H.W. YEOM**, Y.D. CHUNG** AND H.J. SHIN***, UNIV. OFTOKYO,
SEMICONDUCTOR TECHNOL. ACADEMICRES. CENTER, JAPAN, YONSEI UNIV. AND
POHANG UNIV. SCI. & TECHNOL., KOREA 226 16:15 (4) ELECTRICAL
CHARACTERIZATION OF ATOMIC-SCALE DEFECTS IN AN ULTRATHIN SI OXYNITRIDE
LAYER N. MIYATA AND M. ICHIKAWA, JRCAT, JAPAN 228 16:35 (5) MONOLAYER
NITRIDATION OF SI(001) SURFACES Y. MORITA, T. ISHIDA* AND H. TOKUMOTO,
JRCATAND AIST, JAPAN 230 16:55 (6) GROWTH PROCESSES AND ELECTRICAL
CHARACTERISTICS OF SILICON NITRIDE FILMS FORMED ON SI(100) BY RADICAL
NITROGEN H. IKEDA, D. MATSUSHITA, S. NAITO, K. OHMORI, A. SAKAI, S.
ZAIMA AND Y. YASUDA, NAGOYA UNIV., JAPAN 232 LB-2: LATE NEWS
(17:15-17:45) 17:15 (1) GIDL CURRENTS IN MOSFETS WITH HIGH-K DIELECTRIC
S.-I. CHANG, J. LEE* AND H. SHIN, KAIST AND WONKWANG UNIV., KOREA 234
XXM 17:30 (2) ANTIMONY BEHAVIOR IN LASER ANNEALING PROCESS FOR ULTRA
SHALLOW JUNCTION FORMATION K. SHIBAHARA, Y. ISHIKAWA, D. ONIMATSU, N.
MAEDA, A. MINEJI*, K. KAGAWA**, A. MATSUNO** AND T. NIRE**, HIROSHIMA
UNIV., KOMATSU* AND NEC, JAPAN 236 ROOM C C-3: SILICON-ON-INSULATOR
TECHNOLOGIES I (9:00-10:30) 9:00 (1) FUTURE SOI TECHNOLOGY AND DEVICES
(INVITED) J.-P. COLINGE AND J.-T. PARK*, UNIV. OFCA, USA AND UNIV.
OFINCHON, KOREA 238 9:30 (2) NOVEL SOI FABRICATION PROCESS BY LIGHT ION
IMPLANTATION AND ANNEALING IN OXYGEN IN CLUDING ATMOSPHERE A.
OGURA,NEC, JAPAN 240 9:50 (3) NOVEL FABRICATION TECHNIQUE FOR RELAXED
SIGE-ON-INSULATOR SUBSTRATES WITHOUT THICK SIGE BUFFER STRUCTURES T.
MIZUNO, N. SUGIYAMA, T. TEZUKA AND S. TAKAGI, TOSHIBA, JAPAN 242 10:10
(4) THINNER SOI USING PLASMA HYDROGENATION A.Y. USENKO, A.G. ULYASHIN*,
W.N. CARR***, W.R. FAHRNER*, A.V. FRANTSKEVICHI**, R. JOB* SILICON WAFER
TECHNOL., NEW JERSEY INST, OF TECHNOL., USA, **BELARUSSIAN STATE
POLYTECHNIC ACADEMY, BELARUS AND ***HAGEN UNIV., GERMANY 244 C-4:
SILICON-ON-INSULATOR TECHNOLOGIESH (10:45-12:05) 10:45 (1) NEW SOI FLASH
MEMORY WITH SIDE CHANNEL AND SIDE FLOATING GATE H. CHOI, T. TANABE, N.
KOTAKI, K.W. KOH, K.T. PARK, H. KURINO AND M. KOYANAGI, TOHOKU UNIV.,
JAPAN 246 11:05 (2) CMOS IMAGE SENSOR USING SOI-MOS/PHOTODIODE COMPOSITE
PHOTODETECTOR DEVICE Y. URYU AND T. ASANO, KYUSHU INST, OF TECHNOL.,
JAPAN 248 11:25 (3) THE INFLUENCE OF THE DEVICE MINIATURIZATION ON THE
ION ENHANCEMENT IN THE INTRINSIC SILICON BODY (I-BODY) SOI-MOSFET S R.
KOH, H. TAKEMURA, K. TAKEUCHI AND T. MOGAMI,NEC, JAPAN 250 11:45 (4) A
SIMPLE METHOD TO FABRICATE DOUBLE-GATE SOIMOSFET WITH DIFFUSION LAYER ON
BULK SILICON WAFER AS THE BOTTOM GATE X. LIN, C. FENG, S. ZHANG, W.-H.
HO AND M. CHAN, HONG KONG UNIV. OF SCI. AND TECHNOL., CHINA 252 LC-1:
LATE NEWS (12:05-12:20) 12:05 (1) STUDY ON SILICON OPTICAL SWITCH WITH
T-SHAPE SI02WAVEGUIDE AS AN OPTICAL CONTROL GATE H. KOBAYASHI, Y. IIDA
AND Y. OMURA, KANSAI UNIV., JAPAN 254 C-5: SILICON-ON-INSULATOR
TECHNOLOGIES III (13:30-15:30) 13:30 (1) SOI TECHNOLOGY FORMPU
APPLICASTIONS (INVITED) M.A. MENDICINO, MOTOROLA, USA 256 14:00 (2) LOW
VOLTAGE SOI CIRCUIT TECHNOLOGY (INVITED) T. DOUSEKI AND J. YAMADA, NTT,
JAPAN 258 14:30 (3) HIGHLY STABLE MICROPROCESSOR USING SIGE INSERTED SOI
MOSFET H.-S. KANG, Y.-W. KIM, K.-S. CHUNG, K.-M. NAM, G.-J. BAE, N.-I.
LEE AND K.-P. SUH, SAMSUNG ELECTRONICS, KOREA 260 14:50 (4) EFFECTS OF
GATE-TO-BODY TUNNELING CURRENT ON PD/SOI CMOS CIRCUITS C.T. CHUANG, R.
PURI AND K. BERNSTEIN, IBM, USA 262 15:10 (5) A 0.5-V, OVER 1-GHZ, 1-MW
MUX/DEMUX CORE WITH MULTI-THRESHOLD ZERO-VTH CMOS/SIMOX TECHNOLOGY T.
DOUSEKI, F. MORISAWA, S. NAKATA AND Y. OHTOMO, NTT, JAPAN 264 XXIV C-6:
SILICON-ON-INSULATOR TECHNOLOGIES IV (15:45-18:05) ROOM F 15:45 (1)
16:05 (2) 16:25 (3) 16:45 (4) 17:05 (5) 17:25 (6) 17:45 (7) SCENARIO OF
SOURCE/DRAIN EXTENSION AND HALO ENGINEERING FOR HIGH PERFORMANCE 50NM
SOI-PMOSFET N. HORIGUCHI, Y. TAGAWA, T. YAMAMOTO, M. KOJIMA AND T.
SUGII, FUJITSU LABS., JAPAN 266 ULTRA-HIGH SELECTIVITY SIDEWALL-SPACER
ETCHING AND CONTACT HOLE ETCHING TECHNOLOGIES FOR 0.1 /URN FD-SOI
DEVICES N. IKEGAMI, H. MATSUHASHI AND J. KANAMORI, OKI ELECTRIC, JAPAN
268 A HIGHLY RELIABLE 0.18 (AA SOI CMOS TECHNOLOGY FOR 3.3V/1.8V
OPERATION USING HYBRID TRENCH ISOLATION AND DUAL GATE OXIDE S. MAEDA, K.
SHIGA, H. NARUOKA, N. HATTORI, T. IWAMATSU, T. MATSUMOTO, Y. HIRANO, Y.
YAMAGUCHI, T. IPPOSHI, S. MAEGAWA AND M. INUISHI, MITSUBISHI ELECTRIC,
JAPAN 270 IMPACT OF HOT CARRIER STRESS ON LOW-FREQUENCY NOISE
CHARACTERISTICS IN FLOATING-BODY SOI MOSFETS T. TSUCHIYA, T. YOSHIDA AND
Y. SATO*, SHIMANE UNIV. AND NTT, JAPAN 272 RF NOISE CHARACTERISTICS OF
SOI MOSFET S A.O. ADAN, M. FUKUMI AND S. SHITARA, SHARP, JAPAN 274
ANOMALOUS NOISE DEGRADATION CAUSED BY DEVICE SIZE EFFECTS IN SOIMOSFETS
H. LEE, K.-S. CHUN, J.H. LEE*, Y.J. PARK AND H.S. MIN, SEOUL NATIONAL
UNIV. AND WONKWANG UNIV., KOREA 276 CONDUCTION MECHANISMS FOR OFF-STATE
LEAKAGE CURRENT OF SCHOTTKY BARRIER THIN-FILM TRANSISTORS (SBTFT) K.-L.
YEH, H.-C. LIN*, R.-G. HUANG, R.-W. TSAI AND T.-Y. HUANG, NATIONAL CHIAO
TUNG UNIV. AND NATIONALNANO DEVICES LABS., TAIWAN 278 ROOM D D-3: IMAGE
SENSING AND PROCESSING (9:00-10:20) 9:00 (1) ADVANCED SENSING CIRCUIT
AND SENSOR STRUCTURE FOR A HIGH-SENSITIVE CAPACITIVE FINGER PRINT
SENSOR LSI H. MORIMURA, S. SHIGEMATSU, T. SHIMAMURA, N. SATO, K. MACHIDA
AND H. KYURAGI, NTT, JAPAN 280 9:20 (2) WIDE DYNAMICRANGEPHOTO DETECTOR
FOR SMARTPOSITION SENSOR USINGLOG-RESPONSEAND CORRELATION CIRCUIT Y.
OIKE, M. IKEDA AND K. ASADA, UNIV. OF TOKYO, JAPAN 282 9:40 (3) PROPOSAL
OF APPLICATION OF PULSED VISION CHIP TO RETINAL PROSTHESIS J. OHTA, N.
YOSHIDA, K. KAGAWA AND M. NUNOSHITA, NARA INST, OFSCI. AND TECHNOL.,
JAPAN 284 10:00 (4) A NEW PHOTODIODE STRUCTURE WITH SPACER WINDOW FOR
HIGH SENSITIVITY 0.35-/MICMOS IMAGERS H.-Y. CHENG, H.-C. CHANG, S.-R.
LI, L.-W. LAI, S.-S. LIN AND Y.-C. KING, NATIONAL TSING-HUA UNIV.,
TAIWAN 286 D-4: SCII QUANTUM NANO-STRUCTURES/DEVICES/PHYSICS I
(10:45-12:15) 10:45 (1) QUANTUM DOT INTERSUBBAND DEVICES (INVITED) P.
BHATTACHARYA, S. KRISHNA AND A. STIFF, UNIV. OFMICHIGAN, USA 288 11:15
(2) REDUCED DARK CURRENT CHARACTERISTICS OF A NORMAN-INCIDENT
IN0.2GAO.8AS/GAASQWIP EMPLOYING A P-I-N-I-P CAMEL DIODE STRUCTURE J.
PARK, H. SON, S. HONG, S.-J. JO*, J.H. KIM* AND J.-I. SONG*,KAISTAND
KJIST, KOREA 290 11:30 (3) ULTRAFAST COHERENT CONTROL OF EXCITONS IN
QUANTUM NANO-STRUCTURES K. KOMORI, G. HAYES*, T. OKADA**, B. DEVEAUD*,
X.-L. WANG, M. OGURA AND M. WATANABE, AIST, JAPAN, SWISS FEDERAL INST,
OFTECHNOL. LAUSANNE, SWITZERLAND AND TOKAI UNIV. JUNIOR COLLEGE, JAPAN
292 XXV 11:45 (4) A PHOTO-DETECTOR HAVING A SILICON QUANTUM WIRE
EMBEDDED IN SILICON DIOXIDE H. KIM, S.-I. CHANG, M.-K. JE, H.-C. SHIN
AND Y. NAGAMUNE*, KAIST, KOREA AND AIST, JAPAN 294 12:00 (5) OPTICAL
PROPERTIES OF STRAIN-BALANCED SIO.73GE0.27 PLANAR MICROCAVITIES ON SI
SUBSTRATES K. KAWAGUCHI, K. KONISHI, S. KOH, Y. SHIRAKI AND J. ZHANG*,
UNIV. OF TOKYO, JAPAN AND IMPERIAL COLLEGE OFSCI., UK 296 D-5: SCII
QUANTUM NANO-STRUCTURES/DEVICES/PHYSICS II (13:30-15:30) 13:30 (1)
TWO-DIMENSIONAL FRIEDEL OSCILLATIONS AND ELECTRON CONFINEMENT TO
NANOSTRUCTURES AT A SEMICONDUCTOR SURFACE (INVITED) K. KANISAWA, M.J.
BUTCHER, Y. TOKURA, H. YAMAGUCHIAND Y. HIRAYAMA,NTT, JAPAN... 298 14:00
(2) QUANTUM RATCHETS AND ROOM TEMPERATURE NANO-DEVICES (INVITED) P.
OMLING, H. LINKE AND A.M. SONG, LUND UNIV., SWEDEN 300 14:30 (3)
NEAR-FIELD SCANNING OPTICAL MICROSCOPY OF QUANTUM DOT ARRAYS S. NOMURA,
K. MATSUDA*, T. SAIKI* AND Y. AOYAGI**, UNIV. OF TSUKUBA, KANAGAWA
ACADEMY OFSCIENCE& TECHNOL. AND RIKEN, JAPAN 302 14:45 (4) A NOVEL
GAAS BINARY DECISION DIAGRAM DEVICE HAVING QUANTUM WIRE BRANCH-SWITCHES
CONTROLLED BY WRAP GATES M. YUMOTO, S. KASAI AND H. HASEGAWA, HOKKAIDO
UNIV., JAPAN 304 15:00 (5) CHARACTERIZATION OF TUNNEL-BARRIERS IN
POLYCRYSTALLINE SI POINT-CONTACT SINGLE-ELECTRON TRANSISTORS Y. FURUTA,
H. MIZUTA, K. NAKAZATO, T. KAMIYA*, Y.T. TAN*, Z.A.K. DURRANI* AND K.
TANIGUCHI**, HITACHIEUROPE, UNIV. OFCAMBRIDGE, UKAND OSAKA UNIV.,
JAPAN... 306 15:15 (6) CHARGE INJECTION CHARACTERISTICS OF A SI QUANTUM
DOT FLOATIONG GATE IN MOS STRUCTURES M. IKEDA, E. YOSHIDA, A. KOHNO*, S.
MIYAZAKI AND M. HIROSE**, HIROSHIMA UNIV., FUKUOKA UNIV. AND AIST,
JAPAN 308 D-6: SCII QUANTUM NANO-STRUCTURES/DEVICES/PHYSICS III
(15:45-17:45) 15:45 (1) DIRECT FORMATION OF GAAS/ALGAAS QUANTUM DOTS BY
DROPLET EPITAXY (INVITED) N. KOGUCHI, NATIONAL INST, FOR MATERIALS SCI.,
JAPAN 310 16:15 (2) OPTICAL INVESTIGATION OF HIGH-DENSITY INGAAS/ALGAAS
QUANTUM WIRE BY CONSTANT MOCVD GROWTH N. TSURUMACHI, C.-S. SON, T.G.
KIM, Y. TAKASUKA AND M. OGURA, AIST, JAPAN 312 16:30 (3) LATTICE
DEFORMATION AND GA DIFFUSION CONCERNING INAS SELF-ASSEMBLED QUANTUM DOTS
ON GAAS(100) AS A FUNCTION OF GROWTH INTERRUPTION TIME N. MATSUMURA, T.
HAGA, S. MUTO, Y. NAKATA*, N. YOKOYAMA*, K. NUMATA** AND K. YABUTA**,
HOKKAIDO UNIV., FUJITSU LABS, AND KANAGAWA HIGH-TECHNOL. FOUNDATION,
JAPAN 314 16:45 (4) LIGHT-ILLUMINATED STM STUDIES ON INAS
NANO-STRUCTURES K. TAKADA, M. TAKEUCHI* AND T. TAKAHASHI, UNIV. OF TOKYO
AND RIKEN, JAPAN 316 17:00 (5) STRUCTURAL AND OPTICAL PROPERTIES OF
10NM-CLASS INGAAS RIDGE QUANTUM WIRE ARRAYS WITH SUB-MICRON PITCHES
GROWN BY SELECTIVEMBE ON PATTERNED INP SUBSTRATE C. JIANG, T. MURANAKA
AND H. HASEGAWA, HOKKAIDO UNIV., JAPAN 318 17:15 (6) REACTIVE ION BEAM
ETCHING OF GAN AND ALGAN FOR NANOSTRUCTURE FABRICATION USING
METHANE-BASED GAS MIXTURES M. ENDO, Z. JIN, S. KASAI AND H. HASEGAWA,
HOKKAIDO UNIV., JAPAN 320 17:30 (7) STRAIN ENGINEERING FOR CONTROL OF
SELF-ORGANIZED QUANTUM NANOSTRUCTURES T. OGINO, H. OMI, D. BOTTOMLEY, K.
SUMITOMO AND Z. ZHANG*, NTT, JAPAN AND PEKING UNIV., CHINA 322 ROOM E
E-3: GROWTH AND CHARACTERISTICS I (9:00-10:30) 9:00 (1) MATERIALS DESIGN
FOR THE DEVELOPMENT OFZNO-BASED DEVICES (INVITED) T. YAMAMOTO, KOCHI
UNIV. OF TECHNOL., JAPAN 324 XXVI 9:30 (2) ATOMISTIC CRYSTAL GROWTH
PROCESS OF METAL OXIDE ELECTRONICS MATERIALS: THEORETICAL SIMULATION
STUDIES M. KUBO, T. YOKOSUKA, H. KUROKAWA, K. SUZUKI, S. TAKAMI, A.
MIYAMOTO, M. KAWASAKI, M. YOSHIMOTO* AND H. KOINUMA*, TOHOKU UNIV. AND
TOKYO INST, OF TECHNOL., JAPAN 326 9:45 (3) GROWTH OF GAAS/INAS
ANTI-DOT STRUCTURE BY SOLID SOURCEMBE D. OKADA, H. HASEGAWA, Y.
HORIKOSHI AND *T. SAITOH, WASEDA UNIV. AND NTT, JAPAN 328 10:00 (4)
FORMATION OF INAS DOTS ON ALGAAS RIDGE WIRES STRUCTURE BY SELECTIVE
AREAMOVPE GROWTH T. KUSUHARA, F. NAKAJIMA, J. MOTOHISA AND T. FUKUI,
HOKKAIDO UNIV., JAPAN 330 10:15 (5) FABRICATION OF QUANTUM DOTS FOR
WAVELENGTH CONVERTER USING FOUR-WAVE MIXING K. YAMAZAKI, R. FUKUOKA AND
K. SHIMOMURA, SOPHIA UNIV., JAPAN 332 E-4: COMPOUND SEMICONDUCTOR HBTS
AND RELATED TECHNOLOGIES (10:45-12:00) 10:45 (1) GROWTH AND
CHARACTERISTICS OF ALGAN/GAN HBTS (INVITED) R.D. DUPUIS, D.J.H. LAMBERT,
U. CHOWDHURY, M.M. WONG, T.G. ZHU, B.S. SHELTON, J.J. HUANG*, D. CARUTH*
AND M. FENG*, UNIV. OFTEXAS AND UNIV. OFILLINOIS, USA.. .334 11:15 (2)
DC CHARACTERISTICS OF INP HBTS UNDER HIGH-TEMPERATURE AND BIAS STRESS K.
KURISHIMA, M. IDA, N. WATANABE, H. NAKAJIMA, Y. YAMANE AND E. SANO, NTT,
JAPAN 336 11:30 (3) A NOVEL HBT WITH COMPOSITE COLLECTOR FOR POWER
AMPLIFIER APPLICATION S.-T. SU, K.-W. TU, C.-L. CHENG, F.-T. CHIEN,
T.-H. CHIEN, J.-H. DUNG AND Y.-M. HSIN*, CHINO-EXCEL TECHNOL. AND
NATIONAL CENTRAL UNIV., TAIWAN 338 11:45 (4) OPTIMIZATION OFOVERGROWN
EX-SITU PROCESSED GAAS INTERFACES FOR A RESONANTTUNNELING PBT E. LIND,
I. PIETZONKA, W. SEIFERT AND L.-E. WERNERSSON, LUND UNIV., SWEDEN 340
E-5: COMPOUND SEMICONDUCTORFETS AND RELATED TECHNOLOGIES (13:30-15:30)
13:30 (1) HBTS AND HEMT BASED ON INGAP/GAAS HETEROSTRUCTURES (INVITED)
T. KIKKAWA, FUJITSU LABS., JAPAN 342 14:00 (2) ROBUST 0.13-PM GATE HJFET
WITH LOW FRINGING CAPACITANCE T. INOUE, A. WAKEJIMA, K. YAMANOGUCHI AND
N. SAMOTO, NEC, JAPAN 344 14:15 (3) LATERAL P-N JUNCTION IN HIGH
ELECTRON-MOBILITY STRUCTURE B. KAESTNER, D.G. HASKO AND D.A. WILLIAMS*,
UNIV. OF CAMBRIDGE AND HITACHI CAMBRIDGE LAB., UK 346 14:30 (4) A
DEPLETION-MODE INO.53GAO.47ASMOSFET WITH A LIQUID PHASE OXIDIZED GATE
S.-J. KANG, J.-C. HAN, S.-J. JO, J.H. KIM, S.-W. PARK* AND J.-I. SONG,
KJISTAND NEOPTEK, KOREA 348 14:45 (5) INGAP/INGAASP-HEMTS HAVING
CHANNEL LAYERS OVER THE CRITICAL LAYER THICKNESS GROWN ON PATTERNED GAAS
SUBSTRATES S.-J. JO, J.H. KIM, S.-S. KIM* AND J.-I.. SONG, KJISTAND
SAMSUNG ELECTRONICS., KOREA 350 15:00 (6) TEMPERATURE CHARACTERISTICS
ALGAN/GAN HETEROJUNCTION FIELD EFFECT TRANSISTORS T. IDE, M. SHIMIZU*,
A. SUZUKI**, X.-Q. SHEN*. H. OKUMURA* AND T. NEMOTO, MEIJI UNIV.,
AISTAND **TOKAI UNIV., JAPAN 352 15:15 (7) SIC/SIOA STRUCTURE FORMED AT
-200C WITH EXCELLENT ELECTRICAL CHARACTERISTICS T. SAKURAI, J.W. PARK,
Y. NISHIOKA*. M. NISHIYAMA AND H. KOBAYASHI, OSAKA UNIV. AND JAPAN
TEXAS INSTRUMENTS, JAPAN 354 E-6: GROWTH AND CHARACTER -ISTICSD
(15:45-17:30) 15:45 (1) APPLICATION OF INAS FREE-STANDING MEMBRANES FOR
ELECTROMECHANICAL SYSTEMS (INVITED) H. YAMAGUCHI, R. DREYFUS, S.
MIYASHITA* AND Y. HIRAYAMA,NTTAND NTT-AT, JAPAN 356 16:15 (2) N/GE
CO-IMPLANTATION INTO GAN FOR N-TYPE DOPING Y. NAKANO, T. KACHI AND T.
JIMBO*, TOYOTA CENTRAL R &D LABS, AND NAGOYA INST, OFTECHNOL., JAPAN
358 XXVII 16:30 (3) INFLUENCE OFTHEFERROELECTRIC POLARIZATION ON
THEPROPERTIES OFTHE TWO-DIMENSIONAL ELEC TRON GAS IN
PB(ZR0.53TIO.47)03/ALXGAI.XN/GAN STRUCTURES B. SHEN, W.P. LI, X.S. WANG,
Z.X. BI, R. ZHANG, Y.G. ZHOU, F. YAN, Y. SHI, Z.G. LIU, Y.D. ZHENG. T.
SOMEYA* AND Y. ARAKAWA*, NANJING UNIV., CHINA AND UNIV. OF TOKYO, JAPAN
360 16:45 (4) INVESTIGATION OF THE POLARIZATION-INDUCED CHARGES IN
MODULATION-DOPED ALX- GAI.XN/ GAN HETEROSTRUCTURES THROUGH
CAPACITANCE-VOLTAGE PROFILING AND SIMULATION Y.G. ZHOU, B. SHEN, H.Q.
YU, R. ZHANG, Y.D. ZHENG, T. SOMEYA* AND Y. ARAKAWA*, NANJING UNIV.,
CHINA AND UNIV. OF TOKYO, JAPAN 362 17:00 (5) THERMODYNAMIC STABILITY
OF GAAS/INAS HETEROSTRUCTURE S. VANNARAT, M. SLUITER AND Y. KAWAZOE,
TOHOKU UNIV., JAPAN 364 17:15 (6) STRONG PHOTOLUMINESCENCE ANDLOW
SURFACE STATEDENSITIES ON CLEAN AND SILICON DEPOSIT ED (001) SURFACES
OF GAAS WITH (4X6) RECONSTRUCTION Y. NAKANO, N. NEGORO AND H. HASEGAWA,
HOKKAIDO UNIV., JAPAN 366 ROOM F F-3: SIGE/III-V/III-N DEVICES AND
CIRCUITS FOR WIRELESS AND OPTICAL COMMUNICATIONS III (9:15-10:30) 9:15
(1) INP HBT DEVICE TECHNOLOGIES FOR ULTRA HIGH-SPEED OPTICAL
COMMUNICATION ICS (INVITED) T. TANOUE, K. OUCHI, K. WATANABE AND R.
TAKEYARI, HITACHI, JAPAN 368 9:45 (2) AFULLY MONOLITHIC INTEGRATED
43-GBIT/S CLOCK AND DATA RECOVERY CIRCUIT USING INALAS/ INGAAS/INP HEMTS
K. MURATA, K. SANO, E. SANO, S. SUGITANI AND T. ENOKI, NTT, JAPAN 370
10:00 (3) HCI-FREE SELECTIVE EPITAXIAL SIGE GROWTH BYLPCVD FOR 80-GHZ
BICMOS PRODUCTION Y. KIYOTA, T. UDO*, T. HASHIMOTO, A. KODAMA**, H.
SHIMAMOTO**, R. HAYAMI, E. OHUE AND K. WASHIO, HITACHI, HITACHI
ULSISYSTEMS AND HITACHI DEVICEENG., JAPAN 372 10:15 (4) A NOBLE
CAPACITIVE-PEAKING TRANSIMPEDANCE AMPLIFIER WITH HIGH LINEARITY GAIN
ACTIVE FEEDBACK DESIGN F.-T. CHIEN, C.-L. CHENG AND K.-W. TU,
CHINO-EXCEL TECHNOL., TAIWAN 374 F-4: ADVANCED SILICON DEVICES AND
DEVICE PHYSICS III (10:45-11:55) 10:45 (1) DEVICE PHYSICS OF SUB-100NM
TRANSISTORS (INVITED) M. LUNDSTROM, PURDUE UNIV., USA 376 11:15 (2)
EXPERIMENTAL EVIDENCE OF INVERSION-LAYER MOBILITY LOWERING IN ULTRATHIN
GATE OXIDE MOSFETS WITH DIRECT TUNNELING CURRENT S. TAKAGI AND M.
TAKAYANAGI, TOSHIBA, JAPAN 378 11:35 (3) COMPREHENSIVE UNDERSTANDING
OFELECTRON ANDHOLE MOBILITY LIMITED BY SURFACE ROUGH NESS SCATTERING IN
PURE OXIDES AND OXYNITRIDES BASED ON CORRELATION FUNCTION OF SURFACE
ROUGHNESS T. ISHIHARA, K. MATSUZAWA, M. TAKAYANAGI AND S. TAKAGI,
TOSHIBA, JAPAN 380 F-5: ADVANCED SILICON DEVICES AND DEVICE PHYSICS IV
(13:30-15:30) 13:30 (1) 70NMMOSFET DEVICE SIMULATION CONSIDERING TWO
DIMENSIONAL CHANNEL QUANTIZATION AND SELF-CONSISTENT NON-EQUILIBRIUM
CARRIER TRANSPORT T. EZAKI, P. WERNER ANDM. HANE, NEC, JAPAN 382 13:50
(2) ENHANCEDQUANTUM EFFECT FOR SUB-0.1NM POCKET TECHNOLOGIES AND ITS
RELEVANCE FOR THE ON-CURRENT CONDITION K. MORIKAWA, H. UENO, D.
KITAMARU, M. TANAKA, T. OKAGAKI, M. MIURA-MATTAUSCH, H.J. MATTAUSCH, S.
KUMASHIRO*, T. YAMAGUCHI*, K. YAMASHITA* AND N. NAKAYAMA*, HIROSHIMA
UNIV. AND SEMICONDUCTOR TECHNOL. ACADEMIC RES. CENTER, JAPAN 384 14:10
(3) HIGH-ACCURACY ANALYSIS OF INTERCONNECT CAPACITANCE FOR FLOATING
METAL FILLS T. TAMESHIGE, Y. TAKEMURA, K. YAMAGUCHI, N. KONISHI, S.
FUKADA AND T. MARUIZUMI, HITACHI, JAPAN 386 XXVUI 14:30 (4) MINIMUM
VALUEOF THE SPECIFIC CONTACTRESISTANCE OF SI-METAL CONTACTS*THE ORIGIN
AND THE MAGNITUDE* K. NATORI, T. SHIMIZU AND N. SANO, UNIV. OF TSUKUBA,
JAPAN 388 14:50 (5) SIGNIFICANT IMPACT OF TRANSPORT NOISE ENHANCEMENT IN
SCALED-DOWN MOSFET S D. SUMINO AND Y. OMURA, KANSAI UNIV., JAPAN 390
15:10 (6) INVESTIGATION ON SWITCHING KINETICS OF INTERFACE TRAPS
THROUGHMOSFETS WITH ULTRA NARROW CHANNELS Y. SHI, B. SHEN, H.M. BU, X.L.
YUAN, S.L. GU, P. HAN, R. ZHANG AND Y.D. ZHENG, NANJING UNIV., CHINA 392
LF-1: LATE NEWS (ORGANIC SEMICONDUCTOR DEVICES AND MATERIALS)
(17:00-17:45) 17:00 (1) EXCIMER LASER CRYSTALLIZATION OF AMORPHOUS ITO
THIN FILM DEPOSITED ON PES Y.H. SON, M.S. PARK, S.J. HAN, J.H. LEE, Y.H.
KIM, S.E. NAM AND H.J. KIM, HONG-IK UNIV., KOREA 394 17:15 (2) SURFACE
MODIFICATION EFFECTS ON THEFET PROPERTY OF PENTACENETHIN FILM M.
YOSHIDA, H. USHIJIMA, T. KAMATA AND S. KOBAYASHI, AIST, JAPAN 396 17:30
(3) FIELD-DEPENDENT MOBILITY OF HIGHLY ORIENTED PENTACENE (C^HU) THIN
FILM FETS T. KOMODA, Y. ENDO, K. KYUNO AND A. TORIUMI, UNIV. OFTOKYO,
JAPAN 398 ROSE ROOM P-L: POSTER SESSION I (13:30-15:30) P-L-L*P-L-5 :
ADVANCED SILICON CIRCUITS AND SYSTEMS P-1-6~P-1-15 : SILICON
PROCESS/MATERIAL TECHNOLOGIES P-L-16~P-L-22: NOVEL DEVICES, PHYSICS&
FABRICATION P-1-23-P-1-25: SIGE/III-V/III-N DEVICES AND CIRCUITS FOR
WIRELESS AND OPTICAL COMMUNICATIONS (1) ANEW CMOS PASSIVE MIXER WITH
HIGH LINEARITY Y. CHO*, J. GIL, I. KWON AND H. SHIN,KAISTAND HAVIN,
KOREA 400 (2) A PROGRAMMABLE SIMD PROCESSOR FOR UNIVERSAL
QUANTUM-CIRCUIT SIMULATOR S. O UCHI, M. FUJISHIMA AND K. HOH, UNIV. OF
TOKYO, JAPNA 402 (3) REACTION-DIFFUSION DEVICES USING MINORITY-CARRIER
TRANSPORT IN SEMICONDUCTORS Y. NISHIMIYA, T. ASAI AND Y. AMEMIYA,
HOKKAIDO UNIV., JAPAN 404 (4) ALL DIGITAL WIRELESS MODEM LSI FOR
SOFTWARE DEFINED RADIO H. NAKASE, S. UEDA AND K. TSUBOUCHI, TOHOKU
UNIV., JAPAN 406 (5) ERROR ANALYSIS ON SIMULTANEOUS DATA TRANSFERS IN
CDMA WIRED INTERFACE H. IWAMURA, R. YOSHIMURA, T.B. KEAT, T. MATSUOKA
AND K. TANIGUCHI, OSAKA UNIV., JAPAN 408 (6) COMPREHENSIVE STUDY ON
RELIABILITY OF LOW-TEMPERATURE POLY-SI TFTS UNDER DYNAMIC CMOS
OPERATIONS Y. URAOKA, H. YANO, T. HATAYAMA AND T. FUYUKI, NARA INST, OF
SCI. AND TECHNOL., JAPAN 410 (7) INVESTIGATION OF INTERCONNECT
TEMPERATURE RISE DUE TO JOULE HEATING AND ITS EFFECT ON ELECTROMIGRATION
RELIABILITY S. MIYAZAKI, H. SAKAUE, S. SHINGUBARA AND T. TAKAHAGI,
HIROSHIMA UNIV., JAPAN *412 (8) LOW TEMPERATUREBST-CVD PROCESS FOR THE
CONCAVE-TYPE CAPACITORS DESIGNED FOR LOGIC-BASE-EMBEDDEDDRAMS A.
TSUZUMITANI, Y. OKUNO, H. OGAWA, Y. MORI, C.N. DORNFEST*, X. JIN*, S.
KHER*, J. TAO*, Y. WANG* AND J. ZHAO*, MATSUSHITA ELECTRIC, JAPAN AND
APPLIED MATERIALS, USA 414 (9) HIGH-PERFORMANCE LOW-K DIELECTRIC USING
ADVANCED EB-CURE PROCESS M. SHIMADA, H. MIYAJIMA, R. NAKATA AND T. YODA,
TOSHIBA, JAPAN 416 (10) EFFECT OF PLASMA NITRIDATION ON THE CONDUCTION
MECHANISM OF TA205 GATE DIELECTRIC W.H. LEE, K. IM, S. JOEN AND H.
HWANG, KJIST, KOREA 418 (11) NUCLEATION AND GROWTH CONTROL OF AL-CVD FOR
DUAL-DAMASCENE APPLICATION T. LINO, M. SUGIYAMA, H. ITOH*, J. AOYAMA*,
H. KOMIYAMA AND Y. SHIMOGAKI, UNIV. OF TOKYO AND SEMICONDUCTOR TECHNOL.
ACADEMIC RES. CTR, JAPAN 420 XXIX (12) NOVEL METHODS TO INCORPORATE
DEUTERIUM IN THEMOS STRUCTURES AND ISOTOPE EFFECTS ON SOFT BREAKDOWN AND
INTERFACE STATES C.-H. LIN, M.H. LEE, B.-C. HSU AND C.W. LIU, NATIONAL
TAIWAN UNIV., TAIWAN 422 (13) DEVELOPMENT OF NEW TIGHT-BINDING MOLECULAR
DYNAMICSPROGRAM TO SIMULATE CHEMICAL- MECHANICAL POLISHING PROCESSES T.
YOKOSUKA, H. KUROKAWA, S. TAKAMI, M. KUBO, A. MIYAMOTO AND A. IMAMURA*,
TOHOKU UNIV. AND HIROSHIMA KOKUSAI GAKUIN UNIV., JAPAN 424 (14)
OPTIMIZATION OF LOW POWER SHALLOW TRENCH ISOLATION BICMOS TECHNOLOGY FOR
MIXED ANALOG/DIGITAL APPLICATION SYSTEMS H. NAKAJIMA, H. KAWAI, C.
YOSHINO,H .MIYAKAWA, H. SUGAYA, H. TAKIMOTO, H. NII, K. INOH, Y.
KATSUMATA AND H. ISHIUCHI, TOSHIBA, JAPAN 426 (15) ULTRATHIN SILICON
OXYNITRIDE LAYERS WITH ALOW LEAKAGE CURRENT DENSITY FORMED BY PLASMA
NITRIDATION USING LOW ENERGY ELECTRON IMPACT AND CHEMICAL OXIDATION M.
TAKAHASHI, M. TAMURA, A. ASANO, 0. MAIDA AND H. KOBAYASHI, OSAKA UNIV.,
JAPAN 428 (16) SINGLE ELECTRON TRANSISTOR USING GAN COUPLED QUANTUM DOTS
FORMED ON SI02/SI SUBSTRATE K. KAWASAKI, D. YAMAZAKI, M. SUZUKI*, K.
TSUTSUI AND Y. AOYAGI, TOKYO INST, OF TECHNOL. AND RIKEN, JAPAN 430
(17) SINGLE ELECTRON MEMORY WITH A DEFINED POLY-SI DOT BASED ON
CONVENTIONAL VLSI TECHNOLGY S.-K. SUNG, J.-S. SIM, D.H. KIM, J.D. LEE
AND B.-G. PARK, SEOUL NATIONAL UNIV., KOREA 432 (18) OPTIMISATION OF
TUNNEL BARRIERS FOR NC-SI SINGLE-ELECTRON TRANSISTORS Y.T. TAN, T.
KAMIYA, Z.A.K. DURRANI AND H. AHMED, UNIV. OFCAMBRIDGE, UK 434 (19)
THREE DIMENSIONAL SIZE EVALUATION OF ISLAND IN SI SINGLE-ELECTRON
TRANSISTOR M. NAGASE, S. HORIGUCHI, A. FUJIWARA AND Y. TAKAHASHI, NTT,
JAPAN 436 (20) CONDUCTION MECHANISM IN EXTREMELY THIN POLY-SI WIRES
-WIDTH DEPENDENCE OFCOULOMB BLOCKADE EFFECT- K. KAWAMURA, T. KIDERA, A.
NAKAJIMA AND S. YOKOYAMA, HIROSHIMA UNIV., JAPAN ... 438 (21) HIGH
FREQUENCY APPLICATIONS OF POLYCRYSTALLINE DIAMOND FIELD-EFFECT
TRANSISTORS H. UMEZAWA, N. FUJIHARA, T. ARIMA, H. TANIUCHI, H. ISHIZAKA,
Y. OHBA, M. TACHIKI, P. KOIDL AND H. KAWARADA, WASEDA UNIV., JAPAN 440
(22) AFM ANDKFM MEASUREMENTS OF SEMICONDUCTOR SURFACE USING CARBON
NANOTUBE TIP FABRICATED BY ELECTROPHORESIS T. MAEDA, N. OZEKI, S.
KISHIMOTO, T. SUGAI, T. MIZUTANI AND H. SHINOHARA, NAGOYA UNIV., JAPAN
442 (23) PHYSICAL MODELING OF SUBSTRATE RESISTANCE IN RF CMOS M. KWON,
M. JE, J. HAN AND H. SHIN, KAIST, KOREA 444 (24) EVALUATION OF THE
IMPACT OF NON-QUASI-STATIC EFFECTS IN RF APPLICATIONS A.F.-L. NG, P.K.
KO AND M. CHAN, HONGKONG UNIV. OFSCI. AND TECHNOL., CHINA .. .446 (25) A
TRIAL OF DUAL EMITTERHBT FORMMIC POWER AMPLIFIER APPLICATION Y.S. LEE
AND C.S. PARK, INFORMATION AND COMMUNICATIONS UNIV., KOREA 72 FRIDAY,
SEPTEMBER 28 ROOMA A-7: SPECIAL SESSION RECENT DEVELOPMENT OF RF-,
OPTICAL, PROBE, POWER, BIO-MEMS TECHNOLOGIES CHANGING DEVICES IN 21
CENTURY I (9:00-11:20) 9:00 (1) CREATION OF HIGH PERFORMANCE
BIOCOMPATIBLE SURFACE Y. NAGASAKI, C. KUWAHARA, M. KANEKO, K. EMOTO, Y.
AKIYAMA*, H. OTSUKA* AND K. KATAOKA*, SCI. UNIV. OF TOKYO AND UNIV. OF
TOKYO, JAPAN 448 9:20 (2) ELECTROLYTE-SOLUTION-GATE DIAMOND FETS
OPERATED IN CI IONIC SOLUTIONS T. SAKAI, Y. ARAKI, H. UMEZAWA, M.
TACHIKI AND H. KAWARADA. WASEDA UNIV., JAPAN... 450 9:40 (3)
MICRO-LIQUID HANDLING DEVICES FOR MINIATURIZED CHEMICAL ANALYSIS SYSTEMS
R. MIYAKE, A. KOIDE, Y. SASAKI AND Y. YOSHIMURA, HITACHI, JAPAN 452 XXX
10:00 (4) MICRO- AND NANOFABRIDCATED DEVICE TECHNOLOGY FOR SINGLE
BIOMOLECULE ANALYSIS M. UEDA, K. HIRANO, N. KAJI, A. MIZUNO* AND Y.
BABA, UNIV. OF TOKUSHIMA AND TOYOHASHI UNIV. OF TECHNOL., JAPAN 454
10:20 (5) INTEGRATED PHOTODIODEDNA IDENTIFICATION SYSTEM FOR GENETIC
CHIP APPLICATIONS M. XUE, W. XU, R. LENIGK, M. CARLES, N.J. SUCHER, N.Y.
IP AND M. CHAN, HONGKONG UNIV. OFSCI. AND TECHNOL., CHINA 456 10:40 (6)
A PORTABLE BIOCHEMICAL ANALYSIS SYSTEM INTEGRATED WITH MICROCAPILLARY
ELECTROPHORESIS AND MICROPLASMA EMISSION SPECTROSCOPY T. ICHIKI, T.
KOIDESAWA, M. WATANABE, T. UJIIE AND Y. HORIIKE*, TOYO UJNV. AND UNIV.
OF TOKYO, JAPAN 458 11:00 (7) BIOCHIP CHECKING HEALTH CONDITION FROM
ANALYSIS OF TRACE BLOOD COLLECTED BY PAINLESS NEEDLE A. OKI, H. OGAWA,
Y. TAKAMURA, M. TAKAI, T. FUKASAWA, J. KIKUCHI*, Y. ITO**, T. ICHIKI***
AND Y. HORIIKE, UNIV. OF TOKYO, AXIOMATEC, SHINDENGEN KOGYO AND
TOYO UNIV., JAPAN 460 A-8: SPECIAL SESSION RECENT DEVELOPMENT OF
RF-, OPTICAL, PROBE, POWER, BIO-MEMS TECHNOLOGIES CHANGING DEVICES IN 21
CENTURY II (11:20-12:30) 11:20 (1) RF-MEMS FOR LOW-POWER COMMUNICATIONS
(INVITED) C.T.-C. NGUYEN, UNIV. OFMICHIGAN, USA 462 12:00 (2) NANO-PROBE
SENSING AND MULTI-PROBE DATA STORAGE (INVITED) T. ONO AND M. ESASHI,
TOHOKU UNIV., JAPAN 464 A-9: SPECIAL SESSION RECENT DEVELOPMENT OF RF-,
OPTICAL, PROBE, POWER, BIO-MEMS TECHNOLOGIES CHANGING DEVICES IN 21
CENTURY HI (13:30-15:10) 13:30 (1) UNCOOLED INFRARED FOCAL PLANE ARRAYS
USING MICROMACHINING TECHNOLOGY (INVITED) M. KIMATA, T. ISHIKAWA, Y.
NAKAKI, M. UENO, H. YAGI, H. HATA, O. KANEDA AND T. SONE, MITSUBISHI
ELECTRIC, JAPAN 466 14:00 (2) OPTICAL MEMS (INVITED) H. KUWANO, NTT,
JAPAN 468 14:30 (3) MICRO POWER GENERATION PROGRAMS AT DARPA (INVITED)
W.C. TANG, DARPA, USA 470 A-10: SPECIAL SESSION RECENT DEVELOPMENT OF
RF-, OPTICAL, PROBE, POWER, BIO-MEMS TECHNOLOGIES CHANGING DEVICES IN 21
CENTURY IV (15:25-16:35) 15:25 (1) BIO-NANOTECHNOLOGY THROUGH
MICROSYSTEMS (INVITED) M. WASHIZU, O. KUROSAWA AND H. KABATA, KYOTO
UNIV., JAPAN 472 15:55 (2)-L ELECTROSTATICALLY LEVITATED ROTATIONAL
GYROSCOPE (INVITED) T. MURAKOSHI, K. FUKATSU AND M. ESASHI*, TOKIMEC AND
TOHOKU UNIV., JAPAN... .474 16:15 (2)-2 ELECTROSTATICALLY LEVITATED
BALL MEMS (INVITED) R. TODA, N. TAKEDA, T. MURAKOSHI*, S. NAKAMURA* AND
M. ESASHI**, BALL SEMICONDUCTOR, USA, TOKIMEC AND TOHOKU UNIV., JAPAN
476 ROOMB B-7: SIGE (C) HETEROSTRUCTURE & MATERIALS (9:00-10:20) 9:00
(1) EXTREMELY HIGH HOLE MOBILITY IN SIGE/GE/SIGE/ HETEROSTRUCTURES
CHARACTERIZED BY MOBILITY SPECTRUM ANALYSIS T. IRISAWA, O.A. MIRONOV*,
M. MYRONOV*, S. KOH AND Y. SHIRAKI, UNIV. OF TOKYO, JAPAN AND UNIV. OF
WARWICK, UK 478 9:20 (2) NOVEL SIGE-ON-INSULATOR VIRTUAL SUBSTRATE
FABRICATED BY SELF-MELT-SOLIDIFICATION N. SUGII, S. YAMAGUCHI AND K.
WASHIO, HITACHI, JAPAN 480 9:40 (3) MECHANISM OF IMPROVED THERMAL
STABILITY OF B IN POLY-SIGE GATE ON SION T. SADOH, FITRIANTO, A. KENJO,
A. MIYAUCHI*, H. INOUE* AND M. MIYAO, KYUSHU UNIV. AND HITACHI, JAPAN
482 XXXI 10:00 (4) P-DOPING INTO STRAIN-INDUCED SI[.YCY EPITAXIAL FILMS
GROWN BYLOW TEMPERATURE CHEMICAL VAPOR DEPOSITION S. YAGI, K. ABE, T.
OKABAYASHI, A. YAMADA AND M. KONAGAI, TOKYO INST, OFTECHNOL., JAPAN 484
B-8: HIGH-K MATERIALS I (10:40-12:20) 10:40 (1) THE RELATION BETWEEN
DIELECTRIC CONSTANT AND FILM COMPOSITION OF ULTRA-THIN SILICON
OXYNITRIDE FILMS: EXPERIMENTAL EVALUATION AND ANALYSIS OF NONLINEARITY
N. YASUDA, K. MURAOKA, M. KOIKE AND H. SATAKE, TOSHIBA, JAPAN 486 11:00
(2) DEFECTTERMINATION BY NITROGEN BONDING DUE TO NO NITRIDATION INMOS
STRUCTURES K. KUSHIDA-ABDELGHAFAR, K. WATANABE, T. KIKAWA, Y. KAMIGAKI
AND E. MURAKAMI, HITACHI, JAPAN 488 11:20 (3) PHYSICAL AND ELECTRICAL
CHARACTERISTICS OF POLY-SI/ZR02/SI02/SI MOS STRUCTURES K.-Y. LIM, D.-G.
PARK, H.-J. CHO, J.-J. KIM, J.-M. YANG, I.-S. CHOI, J.-K. KO, J.-Y. KIM,
I.-S. YEO, J.W. PARK AND H.-K. YOON, HYUNDAI ELECTRONICS, KOREA 490
11:40 (4) INTERFACIAL REACTIONS OF ZR02/SI02/SI LAYERED STRUCTURES H.
WATANABE, NEC, JAPAN 492 12:00 (5) PREPARATION AND CHARACTERIZATION OF
HIGH-K LANTHANOID OXIDE THIN FILMS DEPOSITED BY PULSED LASER DEPOSITION
S. KITAI, O. MAIDA, T. KANASHIMA AND M. OKUYAMA, OSAKA UNIV., JAPAN 494
B-9: HIGH-K MATERIALS II (13:30-15:10) 13:30 (1) LOW LEAKAGE LA203 GATE
INSULATOR FILM WITH EOTS OF 0.8-1.2NM S. OHMI, C. KOBAYASHI, E.
TOKUMITSU, H. ISHIWARA AND H. IWAI, TOKYO INST, OF TECHNOL., JAPAN 496
13:50 (2) STRUCTURAL AND ELECTRICAL CHARACTERISTICS OF HF02 FILMS
FABRICATED BY PULSED LASER DEPOSITION H. IKEDA, S. GOTO, K. HONDA, M.
SAKASHITA, A. SAKAI, S. ZAIMA AND Y. YASUDA, NAGOYA UNIV., JAPAN 498
14:10 (3) SCANNING TUNNELING MICROSCOPY STUDY OF HF SILICATE FORMED BY
ULTTRATHIN HF METAL ON SI02:EFFECT OF HF/SI02 THICKNESS RATIO J.-H. LEE
AND M. ICHIKAWA, JRCAT, JAPAN 500 14:30 (4) PVD TANTALUM OXIDE WITH
BUFFER SILICON NITRIDE STACKED HIGH-K MIS STRUCTURE USING LOW
TEMPERATURE AND HIGH DENSITY PLASMA PROCESSING S. NAKAO, M. NAKAGAWA, I.
OHSHIMA, H. SHIMADA AND T. OHMI, TOHOKU UNIV., JAPAN 502 14:50 (5)
SUPPRESSED BORON PENETRATION IN P+ POLY-SI/AL203/SI
METAL-OXIDE-SEMICONDUCTOR SYSTEM BY REMOTE PLASMA NITRIDATION OF A1203
SURFACE H.-J. CHO, D.-G. PARK, K.-Y. LIM, J.-K. KO, I.-S. YEO, J.W. PARK
AND H.-K. YOON, HYUNDAI ELECTRONICS, KOREA 504 B-10: HIGH-K MATERIALS
III (15:25-16:45) 15:25 (1) SYNTHESIS OF FLUORINATED SINX GATE
DIELECTRIC FILMS USINGECR-PECVD EMPLOYING SIF4/N2/H2 GASES R. MORIOKA,
H. OHTA, M. HORI AND T. GOTO, NAGOYA UNIV., JAPAN 506 15:45 (2)
PRECURSOR CONTROL IN ZR02-CVD FOR BETTER CHARACTERISTICS AS HIGH-K GATE
APPLICATION T. KAWAMOTO AND Y. SHIMOGAKI, UNIV. OF TOKYO, JAPAN 508
16:05 (3) CHARACTERIZATION OF OXYGEN VACANCIES IN SRTI03 THIN FILMS BY
AUGER ELECTRON SPEC TROSCOPY AND ITS APPLICATION TO LEAKAGE CURRENT
REDUCTION OF RU/SRTI03/RU CAPACITOR S. NIWA, S. YAMAZAKI, M. KIYOTOSHI,
J. NAKAHIRA*, M. NAKABAYASHI*, CM. CHU** AND K. EGUCHI, TOSHIBA,
FUJITSU AND WINBONDELECTRONICS, JAPAN 510 16:25 (4) THE ATOMISTIC
ORIGIN OF HIGH DIELECTRIC CONSTANTS OF TA205 THIN FILM DEPOSITED ON RU
ELECTRODES T. HAMADA, T. MARUIZUMI ANDM. HIRATANI, HITACHI, JAPAN 512
XXXN ROOM C C-7: NONVOLATILE MEMORY TECHNOLOGIES (9:00-10:30) 9:00 (1)
KEY ISSUES FOR MANUFACTURABLEFERAM DEVICES (INVITED) T. YAMAZAKI,
FUJITSU, JAPAN 514 9:30 (2) MULTI LEVEL FLASHMEMORY TECHNOLOGY (INVITED)
A. MODELLI, R. BEZ AND A. VISCONTI, STMICROELECTRONICS, ITALY 516 10:30
(3) SI-DOT NON-VOLATILE MEMORY DEVICE (INVITED) J. DE BLAUWE AND M.
OSTRAAT, AGERE SYSTEMS, USA 518 C-8: NONVOLATILE MEMORY TECHNOLOGIES II
(10:45-12:05) 10:45 (1) NOVELPZT CRYSTALLIZATION TECHNIQUE BY USING
FLASH LAMP FORFERAM EMBEDDED LSLS AND LTRFERAM DEVICES K. YAMAKAWA, K.
IMAI, O. ARISUMI, T. ARIKADO, M. YOSHIOKA*, T. OWADA AND K. OKUMURA,
TOSHIBA AND USHIO, JAPAN 520 11:05 (2) NOVEL CAPACITOR TECHNOLOGY FOR
SUB-QUARTER MICRON 1T1C FRAM Y.J. SONG, N.W. JANG, D.J. JUNG, H.H. KIM,
H.J. JOO, S.Y. LEE, K.M. LEE, S.H. JOO, S.O. PARK AND K. KIM, SAMSUNG
ELECTRONICS, KOREA 522 11:25 (3) MODELING OF POLARIZATION RELAXATION
EFFECTS IN FERROELECTRIC MEMORY C.W. TSAI, S.Y. LEE*, S.L. LUNG AND T.
WANG, MACRONIX INTERNATIONAL AND NATIONAL CHIAO-TUNG UNIV., TAIWAN 524
11:45 (4) IMPROVEDRETENTION CHARACTERISTICS
OFMETAL-FERROELECTRIC-INSULATOR-SEMICONDUCTOR STRUC TURE USING A
POST-OXYGEN ANNEALING TREATMENT K. KODAMA, M. TAKAHASHI, M. NODA AND M.
OKUYAMA, OSAKA UNIV., JAPAN 526 LC-2: LATE NEWS (12:05-12:20) 12:05 (1)
A NEW CIRCUIT SIMULATION MODEL OF FERROELECTRIC CAPACITORS T. TAMURA, Y.
ARIMOTO* AND H. ISHIWARA, TOKYO INST, OFTECHNOL. AND FUJITSULABS.,
JAPAN 528 C-9: NONVOLATILE MEMORY TECHNOLOGIES III (13:30-14:50) 13:30
(1) TRAP DENSITY DEPENDENT INELASTIC TUNNELING IN STRESS-INDUCED LEAKAGE
CURRENT S. UNO, K. DEGUCHI, Y. KAMAKURA AND K. TANIGUCHI, OSAKA UNIV.,
JAPAN 530 13:50 (2) ADVANTAGE OF A QUASI-NONVOLATILEMEMORY WITH ULTRA
THIN OXIDE T. USUKI, N. HORIGUCHI AND T. FUTATSUGI, FUJITSU LABS., JAPAN
532 14:10 (3) ELECTRON DISCHARGE MODEL OF LOCALLY-TRAPPED CHARGE IN
OXIDE-NITRIDE-OXIDE (ONO) GATES FORNROM NON-VOLATILE SEMICONDUCTOR
MEMORY DEVICES E. LUSKY, Y. SHACHAM-DIAMAND, I. BLOOM* AND B. EITAN*,
TELAVIV UNIV. AND SAIFUN SEMICONDUCTORS, ISRAEL 534 14:30 (4) TIME
DEPENDENT ANOMALOUS CHARGE LOSS MODELING IN FLASH MEMORIES AND AN
ACCELERAT ED TESTING PROCEDURE F. SCHULER, G. TEMPEL, H. MELZNER, P.
HENDRICKX*, D. WELLEKENS*,M. LORENZINI* AND J.V. HOUDT*, INFINEON
TECHNOLOGIES, GERMANY AND IMEC, BELGIUM 536 C-10: NONVOLATILE MEMORY
TECHNOLOGIES IV (15:05-16:45) 15:05 (1) ANEW TWO-STEP ROUND OXIDATION
STI TECHNOLOGY FOR HIGHLY RELIABLEFLASH MEMORY N. UEDA, Y. YAMAUCHI AND
T. OHMI*, SHARP AND TOHOKU UNIV., JAPAN 538 15:25 (2) LOW-VOLTAGE
EMBEDDED FLASH-EEPROM IN 0.18 /MI CMOS D. DORMANS, D. BOTER, A.
CACCIATO, M. DIEKEMA, C. DIJKSTRA, M. HENDRICKS, R. VAN DER LINDE, G.
TAO, H. VALK, E. VAN DER VEGT AND R. VERHAAR, PHILIPS SEMICONDUCTORS,
THE NETHERLANDS 540 15:45 (3) MACRO GATE CURRENT MODEL AND MODELING
PARAMETER EXTRACTION OF THE SSI FLASH CELL C.-M. LIU, M.-B. CHANG, P.
GUO, A.V. KORDESCH, B. LEE AND K.-Y. SU, WINBOND ELECTRONICS, USA 542
XXXM 16:05 (4) ANEW TWO-TRANSISTORMACRO MODELING OF SOURCE SIDE
INJECTION (SSI) FLASH CELL CON SIDERING REMOTE-ELECTRODE INDUCED
BARRIER LOWERING (RIBL) S.-P. SIM, A. KORDESCH*, B. LEE*, C.-M. LIU*, K.
LEE** AND C.Y. YANG, SANTA CLARA UNIV., WINBONDELECTRONICS, USA AND
KAIST, KOREA 544 16:25 (5) A NOVEL METHOD FOR EXTRACTING THE COUPLING
COEFFICIENT WITHOUT A REFERENCE CELL FOR A SPLIT-GATE FLASH EEPROM H.
FUJIWARA, M. ARIMOTO, T. KAIDA, S. SUDO, K. KUROOKA, M. HIRASE, T.
HIROSHIMA AND K. MAMENO, SANYO ELECTRIC, JAPAN 546 ROOMD D-7: SINGLE
ELECTRON DEVICES (9:00-10:30) 9:00 (1) A MERGEDSET-MOSFET LOGIC FOR
INTERFACE AND MULTIPLE-VALUED FUNCTIONS H. INOKAWA, A. FUJIWARA AND Y.
TAKAHASHI, NTT, JAPAN 548 9:15 (2) OBSERVATION OFNEGATIVE
DIFFERENTIALCONDUCTANCE AND ITS IMPACT ON SINGLE-ELECTRON-TRAN SISTOR
CHARACTERISTICS Y. ONO AND Y. TAKAHASHI, NTT, JAPAN 550 9:30 (3) SINGLE
ELECTRON TRANSISTORS WITH SIDEWALL DEPLETION GATES ON A
SILICON-ON-INSULATOR NANO-WIRE K.R. KIM, D.H. KIM, S.K. SUNG, J.D. LEE,
B.G. PARK, B.H. CHOI*, S.W. HWANG* AND D. AHN*, SEOUL NATIONAL UNIV. AND
UNIV. OF SEOUL, KOREA 552 9:45 (4) ROOM TEMPERATURE COULOMB DIAMOND
CHARACTERISTIC OF SINGLE ELECTRON TRANSISTOR Y. GOTOH, K. MATSUMOTO*, M.
ISHII** AND T. MAEDA, UNIV. OF TSUKUBA, AIST AND CREST, JAPAN 554
10:00 (5) FABRICATIONOFSINGLEELECTRON TRANSISTORS ONHYDROGEN-TERMINATED
DIAMOND SURFACE US ING ATOMIC FORCE MICROSCOPE M. TACHIKI, H. SEO, T.
FUKUDA, K. SUGATA, T. BANNO, H. UMEZAWA AND H. KAWARADA, WASEDA UNIV.,
JAPAN 556 10:15 (6) NANO-DEVICE FORMATION IN A MULTI-WALL CARBON
NANOTUBE N. YONEYA, E. WATANABE, K. TSUKAGOSHI AND Y. AOYAGI, RIKEN,
JAPAN 558 D-8: SCANNING PROBE (10:45-12:00) 10:45 (1) IMAGING COHERENT
ELECTRON FLOW (INVITED) R.M. WESTERVELT, M.A. TOPINKA, B.J. LEROY,
S.E.J. SHAW, R. FLEISCHMANN*, E.J. HELLER, K.D. MARANOWSKI** AND A.C.
GOSSARD**, HARVARD UNIV., MAX-PLANCK, INST, FUR STRBMUNGSFORSCHUNG
GERMANY AND UNIV. OF CA, USA 560 11:15 (2) NANOMETER-SCALE
CHARACTERIAZATION BY SCANNING TUNELING MICROSCOPY (INVITED) G. MEYER, J.
REPP*, F. MORESCO*, S.W. HLA*, S. FOLSCH*, K.H. RIEDER* H. TANG**, A.
GOURDON**, C. JOACHIM**, PAUL-DRUDE INST, FUR FESTKORPERELEKTRONIK,
FREIE UNIV. BERLIN, GERMANY AND CEMES-CNRS, FRANCE 562 11:45 (3)
QUANTUM POINT CONTACT SWITCH USING SOLID ELECTROCHEMICAL REACTION T.
HASEGAWA, K. TERABE, T. NAKAYAMA AND M. AONO, RIKEN, JAPAN 564 LD-1:
LATE NEWS (NOVEL DEVICES, PHYSICS, & FABRICATION) (12:00-12:30) 12:00
(1) PERFORMANCE OFSILICON BASED BI-DIRECTIONAL ELECTRON PUMPS CONSISTING
OFTWO COULOMB BLOCKADE DEVICES T. ALTEBAEUMER AND H. AHMED, UNIV.
OFCAMBRIDGE, UK 566 12:15 (2) SINGLE-ELECTRON DETECTION IN SI-WIRE
TRANSISTORS ATROOM TEMPERATURE A. FUJIWARA, K. YAMAZAKI AND Y.
TAKAHASHI, NTT, JAPAN 568 D-9: NOVEL DEVICE &PHENOMENA (13:30-15:00)
13:30 (1) EXTRAORDINARY MAGNETORESISTANCE OF AN OFF-CENTER VAN DER PAUW
DISK (INVITED) S.A. SOLIN AND T. ZHOU, NEC RES. INST., USA 570 XXXIV
14:00 (2) GIANT SURFACE ACOUSTIC WAVE ATTENUATIONIN THE QUANTUMHALL
REGIME INDUCED BY ADC CURRENT Y. TAKAGAKI, E. WIEBICKE, K.-J. FRIEDLAND
AND K.H. PLOOG, PAUL DRUDE INST., GERMANY 572 14:15 (3) SELECTIVE
PROCESSING OF INDIVIDUAL CARBON-NANOTUBES USINGATOMIC FORCE MICROSCOPY
INSTALLED IN TRANSMISSION ELECTRON MICROSCOPE T. KUZUMAKI, T. KIZUKA*
AND Y. HORIIKE, UNIV. OFTOKYO AND NAGOYA UNIV., JAPAN... 574 14:30 (4)
TRANSIENTAND STATIONARY CHARACTERISTICS
OFTHERMALLYINDUCEDULTRASONICEMISSION FROM NANOCRYSTAUINE POROUS SILICON
T. MIGITA, H. SHINODA* ANDN. KOSHIDA, TOKYO UNIV. OFAGRICULTUREAND
TECHNOL., AND UNIV. OF TOKYO, JAPAN 576 14:45 (5) SIMPLE FABRICATION OF
SILICON NANOPYRAMIDS FOR HIGH PERFORMANCE FIELD EMITTER ARRAY T. TANII,
T. GOTO, T. IIDA, M. KOH-MASAHARA* AND I. OHDOMARI, WASEDA UNIV. AND
AIST, JAPAN 578 D-10: RESONANT TUNNELING DEVICES (15:15-16:30) 15:15
(1) HIGH FREQUENCY PERFORMANCE OF DIAMOND FIELD-EFFECT TRANSISTOR H.
TANIUCHI, H. UMEZAWA, H. ISHIZAKA, T. ARIMA AND H. KAWARADA, WASEDA
UNIV., JAPAN 580 15:30 (2) SII.XGEX/SI TRIPLE-BARRIER RTD WITH A
PEAK-TO-VALLEY RATIO OF S; 180 ATRT FORMED USING AN ANNEALED THIN
MULTILAYER BUFFER S. YAMAGUCHI, A. MEGURO AND Y. SUDA, TOKYO UNIV.
OFAGRICULTURE AND TECHNOL., JAPAN 582 15:45 (3) RESONANT TUNNELING
EFFECT IN SI/SI02 DOUBLE BARRIER STRUCTURE Y. ISHIKAWA, T. ISHIHARA, M.
IWASAKI AND M. TABE, SHIZUOKA UNIV., JAPAN 584 16:00 (4) FLUORIDE
RESONANTTUNNELING DIODES CO-INTEGRATED WITH SI-MOSFETS K. TSUTSUI, T.
TERAYAMA, H. SEKINE AND H. KAMBAYASHI, TOKYO INST, OF TECHNOL., JAPAN
586 16:15 (5) THE FORMATION OF RESONANCE TUNNELDEVICE BY R-AL203/SI
MULTIPLE HETROSTRUCTURE Y. KOJI, M. SHAHJAHAN, R. ITO, K. SAWADA AND M.
ISHIDA, TOYOHASHI UNIV. OF TECHNOL., JAPAN 588 LD-2: LATE NEWS
(16:30-16:45) 16:30 (1) NON-VOLATILE DOUBLY STACKED SI DOT MEMORY WITH
SI NANO-CRYSTALLINE LAYER R. OHBA, N. SUGIYAMA, K. UCHIDA, J. KOGA AND
S. FUJITA, TOSHIBA, JAPAN 590 ROOME E-7: OPTICAL INTERCONNECTION AND
PROCESSING DEVICES (9:00-10:30) 9:00 (1) RECENT PROGRESS OF LONG
WAVELENGTHVCSEL RESEARCH (INVITED) M. ORTSIEFER AND M.-C. AMANN,
TECHNISCHE UNIV. OFMUNCHEN, GERMANY 592 9:30 (2) OPTICAL DATA TRANSFER
IN MULTICHIP MODULE WITH OPTICAL INTERCONNECTION T. HASHIMOTO, K.T.
PARK, H. KURINO, AND M. KOYANAGI TOHOKU UNIV., JAPAN 594 9:45 (3)
STACKED OPTICAL BRANCHED WAVEGUIDES FOR OPTICAL INTERCONNECTION ON SI
CHIPS S. YOKOYAMA, Y. HARA AND K. UMEDA, HIROSHIMA UNIV., JAPAN 596
10:00 (4) LPE-GARNET BASE MAGNETO-OPTIC SPATIAL LIGHT MODULATOR J.H.
PARK, D.H. LEE*, T. KUWABARA, J.K. CHO* AND M. INOUE, TOYOHASHI UNIV. OF
TECHNOL., JAPAN AND GYEONGSANGNATIONAL UNIV., KOREA 598 10:15 (5) EXCESS
NOISE CHARACTERISTICS OFA-SI:H P-I-N PHOTODIODE FILMS M. AKIYAMA, M.
HANADA, H. TAKAO, K. SAWADA AND M. ISHIDA, TOYOHASHI UNIV. OF TECHNOL.,
JAPAN 600 XXXV E-8: SEMICONDUCTOR PHOTONIC DEVICES (10:45-12:00) 10:45
(1) INTEGRATED LIGHT SOURCES FOR 40 GBIT/S AND BEYOND (INVITED) H.
TAKEUCHI AND Y. AKAGE, NTT, JAPAN 602 11:15 (2) FABRICATION OF
INGAASP/INP TWIN-GUIDE LASER DIODE WITH RECTANGULAR RING CAVITY S.K.
JEON, B.J. KIM, M.J. KIM, J.H. CHA, J.H. KIM AND Y.S. KWON, KAIST,
KOREA...604 11:30 (3) CURRENT AND WAVELENGTH CHARACTERISTICS OF
POLARIZATION-INSENSITIVE SOAS WITH STRAINED- BULK ACTIVE LAYERS M. ITOH,
Y. SHIBATA, T. KAKITSUKA, Y. KADOTA, Y. KONDO AND Y. TOHMORI, NTT, JAPAN
606 11:45 (4) REDUCTIONIN OPERATING CURRENT OFHIGH-POWER 660-NM
LASERDIODES USING A TRANSPARENT ALGAAS CAP LAYER R. HIROYAMA, D. INOUE,
Y. NOMURA, Y. UEDA, M. SHONO AND M. SAWADA, SANYO ELECTRIC, JAPAN 608
E-9: OPTICAL SWITCHES, FILTERS, AND AMPLIFIERS (13:30-15:15) 13:30 (1)
STRATEGIES FOR ULTRA-WIDE BAND OPTICAL AMPLIFIER DEVELOPMENT (INVITED)
S. NAMIKI, FURUKAWA ELECTRIC, JAPAN 610 14:00 (2) RELIABILITY OF
TELLURITE FIBER MODULE FOR FIBER AMPLIFIER APPLICATIONS H. ONO, Y.
NISHIDA, K. SHIKANO, A. MORI, K. HOSHINO*. T. KANAMORI*, Y. OHISHI* AND
M. SHIMIZU,NTT AND NTTELECTRONICS, JAPAN 612 14:15 (3) HIGHLY RELIABLE
PHOTOSENSITIVE PHASE TRIMMING TECHNIQUE FOR NARROW CHANNEL SPACED
ARRAYED-WAVEGUIDE GRATING MULTI/DEMULTIPLEXER M. ABE, K. TAKADA, M. ITO,
T. TANAKA, Y. INOUE, T. KITOH, T. SHIBATA AND Y. HIBINO, NTT, JAPAN ,
614 14:30 (4) LOW SWITCHING POWER SILICA-BASED SUPER HIGH DELTA
THERMO-OPTIC SWITCH WITH HEAT INSULATING GROOVES S. SOHMA, T. GOH, H.
OKAZAKI, M. OKUNO AND A. SUGITA, NTT, JAPAN 616 14:45 (5) OPTICAL SWITCH
BASED ON THERMOCAPILLARITY (INVITED) T. SAKATA, M. MAKIHARA, H. TOGO, F.
SHIMOKAWA AND K. KANEKO,NTT, JAPAN 618 ROOM F F-6: ORGANIC ELECTRIC
DEVICES AND MATERIALS I (9:00-10:30) 9:00 (1) ALL-POLYMER THIN FILM
TRANSISTORS FABRICATED BY HIGH-RESOLUTION INK-JET PRINTING (INVITED) H.
SIRRINGHAUS, T. KAWASE*, T. SHIMODA* AND R. FRIEND, UNIV. OFCAMBRIDGE,
AND EPSON CAMBRIDGE LAB., UK 620 9:30 (2) CONTROL OF FET
CHARACTERISTICS BY ELECTRIC FIELD DURING CT COMPLEX DEPOSITION M.
IIZUKA, M. NAKAMURA AND K. KUDO, CHIBA UNIV., JAPAN 622 9:45 (3)
ELECTRON SPECTROSCOPY OF ORGANIC THIN FILM FET STRUCTURES T. SHIMADA AND
A. KOMA, UNIV. OF TOKYO, JAPAN 624 10:00 (4) FABRICATION OF FET USING
CHARGE-TRANSFER-COMPLEX LB FILMS H. SAKUMA, M. IIZUKA, M. NAKAMURA AND
K. KUDO, CHIBA UNIV., JAPAN 626 10:15 (5) HYDROPHOBIC TREATMENT EFFECT
ON HOLE MOBILITY IN PENTACENE THIN FILM TRANSISTOR C.-K. SONG, B.-W.
KOO, S.-B. LEE AND D.-H. KIM, DONG-A UNIV., KROEA 628 F-7: ORGANIC
ELECTRIC DEVICES AND MATERIALS N (10:45-11:15) 10:45 (1) ANEW CO GAS
SENSOR USING FERROCENYL DENDRIMER C.-K. SONG, B.-W. KOO, S.-B. LEE AND
D.-H. KIM, DONG-A UNIV., KOREA 630 11:00 (2) THEORETICAL STUDY ON
INCLUSION COMPLEX OF POLYANILINE COVERED BY CYCLODEXTRINS FOR MOLECULAR
DEVICE R.V. BELOSLUDOV, H. MIZUSEKI, K. ICHINOSEKI AND Y. KAWAZOE,
TOHOKU UNIV., JAPAN... 632 XXXVI F-8: ORGANIC PHOTONIC DEVICES AND
MATERIALS (13:30-15:00) 13:30 (1) ORGANIC SOLID STATE LASERS (INVITED)
J.H. SCHON, LUCENT TECHNOL., USA 634 14:00 (2) ELECTROLUMINESCENT
PROPERTIES OF OLEDS WITH A RUBRENE SUB-MONOLAYER INSERTED BETWEEN
ELECTRON-AND HOLE-TRANSPORT LAYERS M. MATSUMURA AND T. FURUKAWA, OSAKA
UNIV., JAPAN 636 14:15 (3) OBSERVATION OF PHOTOASSISTED
ELECTROLUMINESCENT EMISSION ENHANCED BY NEAR-INFRARED IRRADIATION T.
TANO, N. TAKADA, M. YOSHIDA, T. KODZASA, H. USHIJIMA, K. YASE AND T.
KAMATA, AIST, JAPAN 638 14:30 (4) TRANSIENT PROPERTIES OF ORGANIC
ELECTROLUMINESCENT DIODES USING 8-HYDROXYQUINOLINE ALUMINUM AS A LIGHT
SOURCE FOR POLYMERIC INTEGRATED DEVICES H. KAJII, T. TSUKAGAWA, T.
TANEDA, K. YOSHINO, M. OZAKI, A. FUJII, M. HIKITA*, S. TOMARU*, S.
IMAMURA*, H. TAKENAKA*, J. KOBAYASHI*, F. YAMAMOTO* AND Y. OHMORI, OSAKA
UNIV. AND NTT-AT, JAPAN 640 14:45 (5) CARRIER MOBILITIES IN ORGANIC
ELECTRON TRANSPORTMATERIALS DETERMINEDFROM SPACE CHARGE LIMITED CURRENT
T. YASUDA, Y. YAMAGUCHI*, D.-C. ZOU AND T. TSUTSUI, KYUSHU UNIV. AND
KUMAMOTO TECHNO RES. PARK, JAPAN 642 F-9: ORGANIC THIN FILMS AND
CHARACTERIZATION (15:15-16:45) 15:15 (1) ELECTRON TUNNELING DEVICES
USING ORGANIC ULTRA-THIN FILMS AND SPECIFIC DIELECTRIC PROPERTY OF
ORGANIC MONOLAYERS (INVITED) M. IWAMOTO, TOKYO INST, OFTECHNOL., JAPAN
644 15:45 (2) PHOTO-INDUCED IN-PLANE ALIGNMENTS OF NEMATIC LIQUID
CRYSTAL MOLECULES ON AZO-DYE CONTAINING ALTERNATE SELF-ASSEMBLED FILMS
INVESTIGATED USING ATTENUATED TOTAL REFLEC TION METHOD K. SHINBO, J.
ISHIKAWA, A. BABA, F. KANEKO, K. KATO AND R.C. ADVINCULA*, NIIGATA
UNIV., JAPAN AND UNIV. OFALABAMA AT BIRMINGHAM, USA 646 16:00 (3)
OPTICAL BEHAVIOR AND SURFACE MORPHOLOGY OF THE AZOBENZENE FUNCTIONALIZED
DENDRIMER IN ORGANIC THIN MONOLAYERS H.-K. SHIN, E. PARK, C. KIM AND
Y.-S. KWON, DONG-A UNIV., KOREA 648 16:15 (4) PHOTOVOLTAIC PROPERTIES OF
ULTRAMICROSTRUCTURE-CONTROLLED ORGANIC CO-DEPOSITED FILMS M. HIRAMOTO,
K. SUEMORI AND M. YOKOYAMA, OSAKA UNIV., JAPAN 650 16:30 (5) A
PHOTORESPONSIVE RUTHENIUM COMPLEX-TITANIUM OXIDE-VIOLOGEN FILM PREPARED
BY THE COMBINATION OF SELF-ASSEMBLY AND SURFACE SOL-GEL PROCESSES S.
YAMADA, S. NITAHARA AND T. AKIYAMA, KYUSHU UNIV., JAPAN 652 P-2: POSTER
SESSION II (10:00-12:00) P-2-L~P-2-7: QUANTUM
NANOSTRUCTURES/DEVICES/PHYSICS (1) EFFECT OF SHAPE AND SIZE ON ELECTRON
TRANSITION ENERGIES OF INAS SEMICONDUCTOR QUANTUM DOTS Y. LI, O.
VOSKOBOYNIKOV, C.P. LEE, S.M. SZE AND O. TRETYAK*, NATIONAL CHIAO TUNG
UNIV., TAIWAN AND KIEV TARAS SHEVCHENKO UNIV., UKRAINE 654 (2)
ELECTROOPTIC CHARACTERIZATION OF FIVE-LAYERASYMMETRIC COUPLED QUANTUM
WELL T. SUZUKI, J.-H. NOH, T. ARAKAWA, K. TADA, Y. OKAMIYA AND Y.
MIYAGI, YOKOHAMA NATIONAL UNIV., JAPAN 656 (3) INDIUM ADATOM MIGRATION
IN INAS/GAAS QUANTUM-DOT GROWTH K. SHIRAMINE, T. ITOH, S. MUTO, T.
KOZAKI AND S. SATO, HOKKAIDO UNIV., JAPAN 658 (4) ASOLID-STATE
LIGHT-EMITTINGDEVICEBASED ON EXCITATIONS OF BALLISTIC ELECTRONSGENERATED
IN NANOCRYSTALLINE POROUS POLY-SILICON FILMS Y. NAKAJIMA, A. KOJIMA, H.
TOYAMA AND N. KOSHIDA, TOKYO UNIV. OFAGRICULTURE& TECHNOL., JAPAN 660
XXXVII (5) EXCITATION WAVELENGTH DEPENDENCE OF TERAHERTZ
ELECTROMAGNETICWAVE GENERATION FROM QUANTUM WIRE I. MOROHASHI, K.
KOMORI*, T. HIDAKA, X.L. WANG*, M. OGURA* AND M. WATANABE*, SHONAN INST,
OFTECHNOL. AND AIST, JAPAN 662 (6) 100K OPERATED PHOTOVOLTAIC INAS/GAAS
QUANTUM-DOT INFRARED PHOTODETECTOR WITH UNIFORM DOT DENSITY S.-Y. LIN,
Y.-J. TSAI AND S.-C. LEE, NATIONAL TAIWAN UNIV., TAIWAN 664 (7)
PHOTOLUMINESCENCE OF FIELD-EFFECT QUANTUM DOT ARRAYS BASED ON A BE-DELTA
DOPED SINGLE HETEROJUNCTION S. NOMURA AND Y. AOYAGI*, UNIV. OF TSUKUBA
AND RIKEN, JAPAN 666 P-3: POSTER SESSION III (10:00-12:00) P-3-L~P-3-7:
QUANTUM NANOSTRUCTURES/DEVICES/PHYSICS (1) THEORETICAL ANALYSIS FOR A
MOLECULAR RESONANT TUNNELING DIODE C. MAJUMDER, H. MIZUSEKI AND Y.
KAWAZOE, TOHOKU UNIV., JAPAN 668 (2) LIGHT EMISSION PROPERTY FROM
ORGANIC DYE THIN FILMS DUE TO EXCITATION OF MULTIPLE SURFACE PLASMONS T.
NAKANO, M. TERAKADO, K. SHINBO, K. KATO, F. KANEKO, T. KAWAKAMI AND T.
WAKAMATSU*, NIIGATA UNIV. AND IBARAKI NATIONAL COLLEGE OF TECHNOL.,
JAPAN 670 (3) EVALUATION OF STRUCTURE AND GAS RESPONSE IN PORPHYRIN
LANGMUIR-BLODGETT FILMS BY ATTENUATED TOTAL REFLECTION MEASUREMENTS K.
KATO, H. ARAKI, K. SHINBO, F. KANEKO, CM. DOOLING* AND T.H. RICHARDSON*,
NIIGATA UNIV., JAPAN AND UNIV. OF SHEFFIELD, UK 672 (4) MOLECULAR
ORDERING AND ELECTRICAL CHARACTERISTICS OF PENTACENE THIN-FILM C.-K.
SONG, B.-W. KOO, S.-B. LEE AND D.-H. KIM,DONG-A UNIV., KOREA 674 (5)
EFFECT OF COMPLEX ON ELECTRICAL PROPERTIES OF DENDRIMER LB FILMS
CONTAINING 48 PYRIDINEALDOXIME S.-B. JUNG, S.-Y. YOO, E. PARK, C. KIM
AND Y.-S. KWON, DONG-A UNIV., KOREA 676 (6) THE OPTICAL BEHAVIOR OF
THICKNESS-SHEAR-MODE QUARTZ RESONATOR H.-C. YOON, J.-M. KIM AND Y.-S.
KWON, DONG-A UNIV., KOREA 678 (7) SHARPLY DIRECTED AND SPECTRAL
NARROWING EMISSION IN ORGANIC LIGHT EMITING DIODES WITH A MICROCAVITY
STRUCTURE F.-S. JUANG AND L.-H. LAIH*, NATIONALHUWEI INST, OF TECHNOL.
AND CHUNGHWA TELECOM, TAIWAN 680 XXXVIII
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| spelling | International Conference on Solid State Devices and Materials 2001 Tokio Verfasser (DE-588)5544480-5 aut Extended abstracts of the 2001 International Conference on Solid State Devices and Materials September 26 - 28, 2001, Tokyo, Diamond Hotel sponsored by the Japan Society of Applied Physics. Technical co-sponsored by IEEE Electron Devices Society ... [Chairperson: Yasuhiro Horiike] Tokyo Business Center for Academic Societies Japan 2001 XXXVIII, 693 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Literaturangaben Semiconductors Congresses Integrierte Schaltung (DE-588)4027242-4 gnd rswk-swf (DE-588)1071861417 Konferenzschrift 2001 Tokyo gnd-content Integrierte Schaltung (DE-588)4027242-4 s DE-604 Horiike, Yasuhiro Sonstige oth Ōyō-Butsuri-Gakkai Sonstige (DE-588)20046-3 oth IEEE Electron Devices Society Sonstige (DE-588)121920-0 oth http://www.gbv.de/dms/tib-ub-hannover/34145575X.pdf lizenzfrei Inhaltsverzeichnis GBV Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=018659108&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Extended abstracts of the 2001 International Conference on Solid State Devices and Materials September 26 - 28, 2001, Tokyo, Diamond Hotel Semiconductors Congresses Integrierte Schaltung (DE-588)4027242-4 gnd |
| subject_GND | (DE-588)4027242-4 (DE-588)1071861417 |
| title | Extended abstracts of the 2001 International Conference on Solid State Devices and Materials September 26 - 28, 2001, Tokyo, Diamond Hotel |
| title_auth | Extended abstracts of the 2001 International Conference on Solid State Devices and Materials September 26 - 28, 2001, Tokyo, Diamond Hotel |
| title_exact_search | Extended abstracts of the 2001 International Conference on Solid State Devices and Materials September 26 - 28, 2001, Tokyo, Diamond Hotel |
| title_full | Extended abstracts of the 2001 International Conference on Solid State Devices and Materials September 26 - 28, 2001, Tokyo, Diamond Hotel sponsored by the Japan Society of Applied Physics. Technical co-sponsored by IEEE Electron Devices Society ... [Chairperson: Yasuhiro Horiike] |
| title_fullStr | Extended abstracts of the 2001 International Conference on Solid State Devices and Materials September 26 - 28, 2001, Tokyo, Diamond Hotel sponsored by the Japan Society of Applied Physics. Technical co-sponsored by IEEE Electron Devices Society ... [Chairperson: Yasuhiro Horiike] |
| title_full_unstemmed | Extended abstracts of the 2001 International Conference on Solid State Devices and Materials September 26 - 28, 2001, Tokyo, Diamond Hotel sponsored by the Japan Society of Applied Physics. Technical co-sponsored by IEEE Electron Devices Society ... [Chairperson: Yasuhiro Horiike] |
| title_short | Extended abstracts of the 2001 International Conference on Solid State Devices and Materials |
| title_sort | extended abstracts of the 2001 international conference on solid state devices and materials september 26 28 2001 tokyo diamond hotel |
| title_sub | September 26 - 28, 2001, Tokyo, Diamond Hotel |
| topic | Semiconductors Congresses Integrierte Schaltung (DE-588)4027242-4 gnd |
| topic_facet | Semiconductors Congresses Integrierte Schaltung Konferenzschrift 2001 Tokyo |
| url | http://www.gbv.de/dms/tib-ub-hannover/34145575X.pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=018659108&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
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