Papers presented at the 7th International Conference of Nitride Semiconductors (ICNS-7): Las Vegas, Nevada, USA, 16 - 21 September 2007
Gespeichert in:
| Format: | Tagungsbericht Buch |
|---|---|
| Sprache: | English |
| Veröffentlicht: |
Weinheim
Wiley-VCH
2008
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| Schriftenreihe: | Physica status solidi : C, Current topics in solid state physics
5,6 |
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis Inhaltsverzeichnis |
| Beschreibung: | Einzelaufnahme eines Zs.-Heftes |
| Beschreibung: | S. 1447 - 2369 Ill., graph. Darst. |
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Datensatz im Suchindex
| _version_ | 1804139341895696384 |
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| adam_text | WWW.PSS-C.COM CURRENT TOPICS IN SOLID STATE PHYSICS PROPERTIES OF
ZNO(0001) LAYERS GROWN BY MOCVD ON GAN(0001) (T. IVEETAL.,P. 1733) WITH
CONTRIBUTIONS FROM THE GQFT. OFF TIONAL CONFERENCE WILEY-VCH ISSN
1862-6351, PHYS. STAT. SOL. (C) 5, NO. 6,1447-2370(2008) CONTENTS PHYS.
STAT. SOL. (C) 5, NO. 6, 1447-1469 (2008) / DOI 10.1002/PSSC.200860018
@W1LEY ITTTERSCIENCE D I S C O V E R S O M E T H I N G GREAT FUELL TEXT
ON OUR HOMEPAGE AT WWW.PSS-C.COM PAPERS PRESENTED AT THE 7TH
INTERNATIONAL CONFERENCE OF NITRIDE SEMICONDUCTORS (ICNS-7) LAS VEGAS,
NEVADA, USA 16-21 SEPTEMBER 2007 GUEST EDITORS: TOMAS PALACIOS AND
DEBDEEP JENA PAGE 1472 PREFACE PAGE 1473-1474 COMMITTEES AND SPONSORS
GROWTH AND CHARACTERIZATION PAGE 1475-1481 PAGE 1482-1484 PAGE 1485-1487
PAGE 1488-1490 PAGE 1491-1494 PAGE 1495-1498 PAGE 1499-1501 PAGE
1502-1504 R. A. OLIVER, M. J. KAPPERS, AND C. J. HUMPHREYS (INVITED)
GROSS WELL-WIDTH FLUCTUATIONS IN INGAN QUANTUM WELLS D. EMIROGLU, J.
EVANS-FREEMAN, M. J. KAPPERS, C. MCALEESE, AND C. J. HUMPHREYS HIGH
RESOLUTION LAPLACE DEEP LEVEL TRANSIENT SPECTROSCOPY STUDIES OF ELECTRON
AND HOLE TRAPS IN N-TYPE GAN G. FRANSSEN, T. SUSKI, M. KRYSKO, B.
TUCZNIK, I. GRZEGORY, S. KRUKOWSKI, A. KHACHAPURIDZE, R. CZERNECKI, S.
GRZANKA, P. MENSZ, M. LESZCZYHSKI, S. POROWSKI, AND M. ALBRECHT
INFLUENCE OF SUBSTRATE MISORIENTATION ON PROPERTIES OF INGAN LAYERS
GROWN ON FREESTANDING GAN G. FRANSSEN, A. KAMIHSKA, T. SUSKI, I.
GORCZYCA, N. E. CHRISTENSEN, A. SVANE, H. LU, W. J. SCHAFF, E. DIMAKIS,
A. GEORGAKILAS, S. B. CHE, Y. ISHITANI, AND A. YOSHIKAWA CONDUCTION BAND
FILLING IN IN-RICH INGAN AND INN UNDER HYDROSTATIC PRESSURE MICHAEL
JETTER AND PETER MICHLER PULSED LAYER GROWTH OF ALINGAN NANOSTRUCTURES
JUNXIA SHI, M. V. S. CHANDRASHEKHAR, JESSE REIHERZER, WILLIAM SCHAFF,
JIE LU, FRANCIS DISALVO, AND MICHAEL SPENCER HIGH INTENSITY RED EMISSION
FROM EU DOPED GAN POWDERS Y. K. FU, C.J.TUN, AND C. H. KUO DISLOCATION
ANNIHILATION IN GAN WITH MULTIPLE MG X N Y /GAN BUFFER LAYERS BY METAL
ORGANIC CHEMICAL VAPOR DEPOSITION M. BICKERMANN, B. M. EPELBAUM, 0.
FILIP, P. HEIMANN, S. NAGATA, AND A. WINNACKER STRUCTURAL PROPERTIES OF
ALUMINUM NITRIDE BULK SINGLE CRYSTALS GROWN BYPVT W1LEY INTERSCIENCE
2008 WILEY-VCH VERLAG GMBH & CO. KGAA, WEINHEIM 1448 CONTENTS PAGE
1505-1507 Y. WAKAMIYA, F. HASEGAWA, AND H. KAWANISHI INVESTIGATION ON
CONDUCTIVITY AT THE GAN/AIN/SIC SUBSTRATE INTERFACE FOR VERTICAL NITRIDE
POWER FETS PAGE 1508-1511 Z.-Q. FANG, B. CLAFLIN, D. C. LOOK, S.
ELHAMRI, H. E. SMITH, W. C. MITCHEL, D. HANSER, E. A. PREBLE, AND K. R.
EVANS DEEP CENTERS IN SEMI-INSULATING FE-DOPED NATIVE GAN SUBSTRATES
GROWN BY HYDRIDE VAPOUR PHASE EPITAXY PAGE 1512-1514 Y. KUMAGAI, T.
NAGASHIMA, H. MURAKAMI, K. TAKADA, AND A. KOUKITU CHARACTERIZATION OF A
FREESTANDING AIN SUBSTRATE PREPARED BY HYDRIDE VAPOR PHASE EPITAXY PAGE
1515-1517 J. TAJIMA, Y. KUBOTA, R. TOGASHI, H. MURAKAMI, Y. KUMAGAI, AND
A. KOUKITU GROWTH OF THIN PROTECTIVE AIN LAYERS ON SAPPHIRE SUBSTRATES
AT 1065 C FOR HYDRIDE VAPOR PHASE EPITAXY OF AIN ABOVE 1300 C PAGE
1518-1521 R. TOGASHI, T. KAMOSHITA, Y. NISHIZAWA, H. MURAKAMI, Y.
KUMAGAI, AND A. KOUKITU EXPERIMENTAL AND AB-INITIO STUDIES OF
TEMPERATURE DEPENDENT INN DECOMPOSITION IN VARIOUS AMBIENT PAGE
1522-1524 YU-HUAI LIU, SHINYA KOIDE, HIDETO MIYAKE, KAZUMASA HIRAMATSU,
ATSUSHI NAKAMURA, AND NOBUYOSHI NAMBU THERMAL ANALYSIS OF GAN POWDER
FORMATION VIA REACTION OF GALLIUM ETHYLENEDIAMINE TETRAACETIC ACID
COMPLEXES WITH AMMONIA PAGE 1525-1528 H. TAKEUCHI, T. SHIRAHAMA, Y.
YAMAMOTO, Y. KAMO, T. KUNII, T. OKU, H. TANAKA, AND M. NAKAYAMA HIGH
SENSITIVITY OF PHOTOLUMINESCENCE-EXCITATION SPECTROSCOPY FOR PROBING
EFFECTS OF PLASMA-INDUCED SURFACE DAMAGES ON CARRIER TRANSPORT IN AL X
GA,_ X N/GAN HETEROSTRUCTURES PAGE 1529-1531 X. J. WANG, I. A. BUYANOVA,
W. M. CHEN, Y. G. HONG, AND C. W. TU EFFECTS OF GROWN-IN DEFECTS ON
ELECTRON SPIN POLARIZATION IN DILUTE NITRIDE ALLOYS PAGE 1532-1535 S.
KIMURA, S. EMURA, K. TOKUDA, Y. HIROMURA, S. HAYAKAWA, Y. K. ZHOU, S.
HASEGAWA, AND H. ASAHI GROWTH AND CHARACTERIZATION OF INCRN AND
(LN,GA,CR)N PAGE 1536-1538 KUNG-LIANG LIN, EDWARD-YI CHANG, JUI-CHIEN
HUANG, WEI-CHING HUANG, YU-LIN HSIAO, CHEN-HAO CHIANG, TINGKAI LI, DOUG
TWEET, JER-SHEN MAA, AND SHENG-TENG HSU MOVPE HIGH QUALITY GAN FILM
GROWN ON SI(111) SUBSTRATES USING A MULTILAYER AIN BUFFER PAGE 1539-1542
M. BOCKOWSKI, P. STRAK, P. KEMPISTY, I. GRZEGORY, B. LUCZNIK, S.
KRUKOWSKI, AND S. POROWSKI LIQUID PHASE EPITAXY OF GAN ON MOCVD
GAN/SAPPHIRE AND HVPE FREE-STANDING SUBSTRATES UNDER HIGH NITROGEN
PRESSURE PAGE 1543-1546 H.-J. ROST, D. SIEHE, K. BOETTCHER, D. GOGOVA,
AND R. FORNARI GROWTH OF SINGLE CRYSTALLINE GAN FROM CHLORINE-FREE GAS
PHASE 2008 WILEY-VCH VERLAG GMBH & CO. KGAA, WEINHEIM WWW.PSS-C.COM
CONTENTS PHYS. STAT. SOL. (C) 5, NO. 6 (2008) 1449 PAGE 1547-1549 ; M.
VEIS, K. HAGIHARA, S. NAKAGAWA, Y. INOUE, AND A. ISHIDA ALN/GAN
SUPERLATTICE QUALITY IMPROVEMENT BY USING MULTIPLE SUPERLATTICE
STRUCTURE PAGE 1550-1552 W. C. MITCHEL, S. ELHAMRI, G. LANDIS, R. GASKA,
S. B. SCHUJMAN, AND L. J. SCHOWALTER ELECTRICAL CHARACTERIZATION OF
ALGAN/GAN ON AIN SUBSTRATES PAGE 1553-1555 C. MAUDER, L. RAHIMZADEH
KHOSHROO, M. V. RZHEUTSKI, E. V. LUTSENKO, G. YABLONSKII, V. I.
KOZLOVSKY, J. WOITOK, Y. DIKME, M. HEUKEN, H. KAIISCH, AND R. H. JANSEN
MOVPE GROWTH AND INVESTIGATION OF AI IN N/AI N MULTIPLE QUANTUM WELLS
PAGE 1556-1558 M. TCHEMYCHEVA, C. SARTEL, G. CIRLIN, L. TRAVERS, G.
PATRIARCHE, L LARGEAU, 0. MAUGUIN, J.-C. HARMAND, L_E SI DANG, J.
RENARD, B. GAYRAL, L NEVOU, AND F. JULIEN GAN/AIN FREE-STANDING
NANOWIRES GROWN BY MOLECULAR BEAM EPITAXY PAGE 1559-1561 NAOFUMI KATO,
S. SATO, H. SUGIMURA, T. SUMII, N. OKADA, M. IMURA, M. IWAYA, S.
KAMIYAMA, H. AMANO, I. AKASAKI, H. MARUYAMA, T. TAKAGI, AND A. BANDOH
GROWTH OF HIGH-QUALITY THICK ALGAN BY HIGH-TEMPERATURE METALORGANIC
VAPOR PHASE EPITAXY PAGE 1562-1564 S. LAZIC, E. GALLARDO, J. M. CALLEJA,
F. AGULLOE-RUEDA, J. GRANDAL, M. A. SAENCHEZ-GARCIA, AND E. CALLEJA RAMAN
SCATTERING BY COUPLED PLASMON-LO PHONONS IN INN NANOCOLUMNS PAGE
1565-1567 A. OUGAZZADEN, T. MOUDAKIR, T. AGGERSTAM, G. ORSAL, J. P.
SALVESTRINI, S. GAUTIER, AND A. A. SIRENKO GAN THIN FILMS ON Z- AND
X-CUT LINB0 3 SUBSTRATES BY MOVPE PAGE 1568-1570 T. AI TAHTAMOUNI, A.
SEDHAIN, J. Y. LIN, AND H. X. JIANG GROWTH AND OPTICAL PROPERTIES OF
A-PLANE AIN AND AI RIEH AIN/ALGA^N QUANTUM WELLS GROWN ON R-PLANE
SAPPHIRE SUBSTRATES PAGE 1571-1574 Y. HOUCHIN, A. HASHIMOTO, AND A.
YAMAMOTO ATMOSPHERIC-PRESSURE MOVPE GROWTH OF IN-RICH INAIN PAGE
1575-1578 DAISUKE LIDA, TAKESHI KAWASHIMA, MOTOAKI IWAYA, SATOSHI
KAMIYAMA, HIROSHI AMANO, AND ISAMU AKASAKI SIDEWALL EPITAXIAL LATERAL
OVERGROWTH OF NONPOLAR A-PLANE GAN BY METALORGANIC VAPOR PHASE EPITAXY
PAGE 1579-1581 T. INOUE, Y. IWAHASHI, S. OISHI, M. ORIHARA, Y. HIJIKATA,
H. YAGUCHI, AND S. YOSHIDA PHOTOLUMINESCENCE OF EUBIE INN FILMS ON
MGO(001) SUBSTRATES PAGE 1582-1584 M. IMURA, H. SUGIMURA, N. OKADA, M.
IWAYA, S. KAMIYAMA, H. AMANO, I. AKASAKI, AND A. BANDO MICROSTRUCTURE OF
THREADING DISLOCATIONS CAUSED BY GRAIN BOUNDARIES IN AIN ON SAPPHIRE
SUBSTRATES PAGE 1585-1588 K. Y. ZANG AND S. J. CHUA ORDERS OF MAGNITUDE
REDUETION IN DISLOCATION DENSITY IN GAN GROWN ON SI(111) BY NANO LATERAL
EPITAXIAL OVERGROWTH WWW.PSS-C.COM 2008 WILEY-VCH VERLAG GMBH & CO.
KGAA, WEINHEIM 1450 CONTENTS PAGE 1589-1593, PAGE 1594-1599 PAGE
1600-1602. PAGE 1603-1605. PAGE 1606-1608 PAGE 1609-1611 PAGE 1612-1614.
PAGE 1615-1617. PAGE 1618-1620. PAGE 1621-1623. PAGE 1624-1626. PAGE
1627-1629. PAGE 1630-1632 PAGE 1633-1638. S. J. CHUA, HAILONG ZHOU, D.
J. SROLOVITZ, AND DANXU DU ANISOTROPIE COALESCENCE BEHAVIORS OF GAN
ISLANDS GROWN BY METAL-ORGANIC CHEMICAL VAPOR DEPOSITION P. H. CHANG, Y.
Y. WEI, C. W. CHEN, H. C. PENG, D. C. LING, N. C. CHEN, AND C. A. CHANG
GROWTH AND CHARACTERIZATION OF INN THIN FILM BY METAL-ORGANIC VAPOR
PHASE EPITAXY (MOVPE) ON DIFFERENT BUFFERS KAI CHENG, M. LEYS, J.
DERLUYN, K. BALACHANDER, S. DEGROOTE, M. GERMAIN, AND G. BORGHS
ALGAN-BASED HETEROSTRUETURES GROWN ON 4 INCH SI(111) BY MOVPE G. ECKE,
CH. Y. WANG, V. CIMALLA, AND 0. AMBACHER OZONE AND UV ASSISTED OXIDATION
OF INN SURFACES NORIHIDE YAMADA, MAMORU IMADE, YOSHIHIRO KITANO, FUMIO
KAWAMURA, MASASHI YOSHIMURA, YASUO KITAOKA, TAKATOMO SASAKI, AND YUSUKE
MORI THE EFFECTS OF GROWTH TEMPERATURE ON THE CRYSTALLINITY OF GAN IN
GALLIUM HYDRIDE VAPOR PHASE EPITAXY METHOD M. NIEBELSCHUETZ, V. CIMALLA,
0. AMBACHER, T. MACHLEIDT, K.-H. FRANKE, J. RISTIC, J. GRANDAL, M. A.
SAENCHEZ-GARCIA, AND E. CALLEJA SPACE CHARGED REGION IN GAN AND INN
NANOCOLUMNS INVESTIGATED BY ATOMIC FORCE MICROSCOPY T. YU. CHEMEKOVA, 0.
V. AVDEEV, I. S. BARASH, E. N. MOKHOV, S. S. NAGALYUK, A. D. ROENKOV, A.
S. SEGAL, YU. N. MAKAROV, M. G. RAMM, S. DAVIS, G. HUMINIC, AND H.
HELAVA SUBLIMATION GROWTH OF 2 INCH DIAMETER BULK AIN CRYSTALS W. N. NG,
X. H. WANG, C. H. LEUNG, P. T. LAI, AND H. W. CHOI NANOPATTERNING GAN
WITH MICROSPHERES HONGBO YU, TAEIL JUNG, AND P. C KU FABRICATION AND
OPTICAL PROPERTIES OF NANO-STRUETURED SEMIPOLAR INGAN/GAN QUANTUM WELLS
ON C-PLANE GAN TEMPLATE T. A. KOMISSAROVA, D. S. PLOTNIKOV, V. N.
JMERIK, T. V. SHUBINA, A. M. MIZEROV, A. N. SEMENOV, S. V. IVANOV, L. I.
RYABOVA, AND D. R. KHOKHLOV ELECTRICAL PROPERTIES AND OPTICAL ABSORPTION
IN INN:IN STRUETURES KAI CHENG, V. MOTSNYI, M. LEYS, S. DEGROOTE, B.
SIJMUS, M. GERMAIN, AND G. BORGHS EPITAXIAL LATERAL OVERGROWTH OF GAN ON
4 INCH SI(111) BY MOVPE CH. Y. WANG, V. CIMALLA, V. LEBEDEV, TH. KUPS,
G. ECKE, S. HAUGUTH, O. AMBACHER, J. G. LOZANO, F. M. MORALES, AND D.
GONZALEZ LNN/LN 2 0 3 HETEROSTRUETURES DONG UK LEE, LIM-KYOUNG HA, JIN
SOAK KIM, EUN KYU KIM, EUI KWAN KOH, AND II KI HAN DISLOCATION RELATED
DEFECT STATES IN GAN IRRADIATED WITH 1 MEV ELECTRON-BEAM YONG SUN WON,
YOUNG SEOK KIM, OLGA KRYLIOUK, AND TIM ANDERSON GROWTH MECHANISM OF
CATALYST- AND TEMPLATE-FREE INN NANORODS ) 2008 WILEY-VCH VERLAG GMBH &
CO. KGAA, WEINHEIM WWW.PSS-C.COM I CONTENTS PHYS. STAT. SOL. (C) 5, NO.
6 (2008) 1451 PAGE 1639-1641 PAGE 1642-1644 PAGE 1645-1647 PAGE
1648-1651 PAGE 1652-1654 PAGE 1655-1658 PAGE 1659-1661 PAGE 1662-166 4
PAGE 1665-1667 PAGE 1668-1670 PAGE 1671-1674 PAGE 1675-1677 W. C. LAI,
Y. S. HUANG, Y. W. YEN, J. K. SHEU, T. H. HSUEH, C. H. KUO, AND S. J.
CHANG THE CL EMISSION OBSERVATION OF THE INGAN/GAN MQWS V SHAPED PITS
WITH DIFFERENT SUPERLATTICES UNDERLAYERS I. GHERASOIU, M. O STEEN, T.
BIRD, D. GOTTHOLD, A. CHANDOLU, D. Y. SONG, S. X. XU, M. HOLTZ, S.A.
NIKISHIN, AND W. J. SCHAFF GROWTH OF HIGH QUALITY INN ON PRODUCTION
STYLE PA-MBE SYSTEM L MESHI, D. CHERNS, I. GRIFFITHS, S. KHONGPHETSAK,
A. GOTT, C. LIU, S. DENCHITCHAROEN, P. SHIELDS, W. WANG, R. CAMPION, S.
NOVIKOV, AND T. FOXON THE REDUCTION OF THREADING DISLOCATIONS IN GAN
USING A GAN NANOCOLUMN INTERLAYER V. YU. DAVYDOV, A. A. KLOCHIKHIN, M.
B. SMIRNOV, YU. E. KITAEV, A. N. SMIRNOV, E. Y. LUNDINA, HAI LU, WILLIAM
J. SCHAFF, H.-M. LEE, H.-W. LIN, Y.-L HONG, AND S. GWO SIMS AND RAMAN
STUDIES OF MG-DOPED INN J. SUMNER, R. A. OLIVER, M. J. KAPPERS, AND C J.
HUMPHREYS ASSESSMENT OF SCANNING SPREADING RESISTANCE MICROSCOPY FOR
APPLICATION TO N-TYPE GAN S. M. O MALLEY, P. L BONANNO, T. WUNDERER, P.
BRUECKNER, B. NEUBERT, F. SCHOLZ, A. KAZIMIROV, AND A. A. SIRENKO X-RAY
DIFFRACTION STUDIES OF SELECTIVE AREA GROWN INGAN/GAN MULTIPLE QUANTUM
WELLS ON MULTI-FACET GAN RIDGES H. GOTO, S. W. LEE, H. J. LEE, HYO-JONG
LEE, J. S. HA, M. W. CHO, AND T. YAO CHEMICAL LIFT-OFF OF GAN EPITAXIAL
FILMS GROWN ON C-SAPPHIRE SUBSTRATES WITH CRN BUFFER LAYERS D. FUHRMANN,
H. JONEN, L. HOFFMANN, H. BREMERS, U. ROSSOW, AND A. HANGLEITER HIGH
QUALITY, HIGH EFFICIENCY AND ULTRAHIGH IN-CONTENT INGAN QWS- THE PROBLEM
OF THERMAL STABILITY TAKAO MIYAJIMA, SHIGEAKI UEMURA, YOSHIHIRO KUDO,
YOSHINORI KITAJIMA, AKIO YAMAMOTO, DAISUKE MUTO, AND YASUSHI NANISHI
DETERMINATION OF THE MG OCCUPATION SITE IN MOCVD- AND MBE-GROWN MG-DOPED
INN USING X-RAY ABSORPTION FINE-STRUCTURE MEASUREMENTS MAX XIANYUN MA
AND HELEN JINGHONG JIA EPIEL PROVIDES ADVANCED OPTICAL CHARACTERIZATION
FOR NITRIDE LED EPI-WAFERS PEI-LUN WU, HSIN-HSIUNG HUANG, HUNG-YU ZENG,
PO-CHUN LIU, CHIH-MING LAI, JENG-DAR TSAY, AND WEI-I LEE COMPARISON
BETWEEN EXTENDED MICROTUNNELS ALONG DIFFERENT CRYSTAL ORIENTATIONS IN
GAN F. RUIZ-ZEPEDA, 0. CONTRERAS, A. DADGAR, AND A. KROST GAN GROWTH ON
SILANE EXPOSED AIN SEED LAYERS WWW.PSS-C.COM 1 2008 WILEY-VCH VERLAG
GMBH & CO. KGAA, WEINHEIM 1452 CONTENTS PAGE 1678-1681 J. SEGURA-RUIZ,
N. GARRO, A. CANTARERO, C. DENKER, F. WERNER, J. MALINDRETOS, AND A.
RIZZI PHOTOLUMINESCENCE AND RAMAN SPECTROSCOPY OF MBE-GROWN INN
NANOCOLUMNS PAGE 1682-1684 S . HATAKENAKA, A. WAKAHARA, Y. NAKANISHI, Y.
FURUKAWA, H. OKADA, AND H. YONEZU LUMINESCENCE PROPERTIES OF GAPN LAYER
GROWN BY OMVPE PAGE 1685-1687 A. T. CHENG, Y. K. SU, AND W. C. LAI
CHARACTERIZATION OF MG-DOPED ALINN GROWN BY METALORGANIC VAPOR PHASE
EPITAXY PAGE 1688-1690 E. V. YAKOVLEV, A. V. LOBANOVA, R. A. TALALAEV,
I. M. WATSON, K. LORENZ, AND E. ALVES MECHANISMS OF ALINN GROWTH BY
MOVPE: MODELING AND EXPERIMENTAL STUDY PAGE 1691-1694 A. V. KONDRATYEV,
R. A. TALALAEV, A. S. SEGAL, E. V. YAKOVLEV, W. V. LUNDIN, E. E.
ZAVARIN, M. A. SINITSYN, A. F. TSATSULNIKOV, AND A. E. NIKOLAEV EFFECT
OF METALLIC SURFACE COVERAGE ON MATERIAL QUALITY IN LLL-NITRIDE MOVPE
PAGE 1695-1698 T. SAWADA, K. TAKAHASHI, K. IMAI, K. SUZUKI, N. KIMURA,
AND K. KITAMORI INFLUENCE OF SURFACE PREPARATION AND I-AIGAN THICKNESS
ON ELECTRICAL PROPERTIES OF I-AIGAN/GAN HETEROSTRUCTURES PAGE 1699-1701
HYEOKMIN CHOE, SANGHWA LEE, YURI SOHN, AND CHINKYO KIM IN-SITU
MEASUREMENT OF THE STRAIN RELAXATION OF GAN NANOGRAINS DURING X-RAY
IRRADIATION PAGE 1702-1705 WEN-CHE TSAI, HSUAN LIN, WEN-CHEN KE, WEN-HAO
CHANG, WU-CHING CHOU, WEI-KUO CHEN, AND MING-CHIH LEE STRUCTURAL AND
OPTICAL PROPERTIES OF INDIUM-RICH INGAN ISLANDS PAGE 1706-1708 CHRISTIAN
DENKER, JOERG MALINDRETOS, FLORIAN WERNER, FRIEDERICH LIMBACH, HENNING
SCHUHMANN, TORE NIERMANN, MICHAEL SEIBT, AND ANGELA RIZZI SELF-ORGANIZED
GROWTH OF INN-NANOCOLUMNS ON P-SI(111) BY MBE PAGE 1709-1711 V. JINDAL,
N. TRIPATHI, M. TUNGARE, 0. PASCHOS, P. HALDAR, AND F.
SHAHEDIPOUR-SANDVIK SELECTIVE AREA HETEROEPITAXY OF LOW DIMENSIONAL
A-PLANE AND C-PLANE INGAN NANOSTRUCTURES USING PULSED MOCVD PAGE
1712-1714 T. NAKAMURA, T. KATAOKA, R. KATAYAMA, T. YAMAMOTO, AND K.
ONABE RF-MBE GROWTH OF CUBIC INN FILMS ON YSZ(001) VICINAL SUBSTRATES
PAGE 1715-1718 S. KUBOYA, S. TAKAHASHI, Q. T. THIEU, F. NAKAJIMA, R.
KATAYAMA, AND K. ONABE MOVPE GROWTH AND PHOTOLUMINESCENCE PROPERTIES OF
INASN QDS PAGE 1719-1722 MAMORU IMADE, NORIHIDE YAMADA, YOSHIHIRO
KITANO, FUMIO KAWAMURA, MASASHI YOSHIMURA, YASUO KITAOKA, YUSUKE MORI,
AND TAKATOMO SASAKI INCREASE IN THE GROWTH RATE OF GAN SINGLE CRYSTALS
GROWN BY GALLIUM HYDRIDE VAPOR PHASE EPITAXY METHOD 2008 WILEY-VCH
VERLAG GMBH & CO. KGAA, WEINHEIM WWW.PSS-C.COM CONTENTS ********I PHYS.
STAT. SOL. (C) 5, NO. 6 (2008) 1453 PAGE 1723-1725 DANIEL BILLINGSLEY,
DAVID PRITCHETT, WALTER HENDERSON, ALEXANDER G. CARVER, SHAWN D.
BURNHAM, AND W. ALAN DOOLITTLE INVESTIGATION INTO THE USE OF MOLECULAR
HYDROGEN ON THE GROWTH OF GALLIUM NITRIDE VIA METAL-ORGANIC MOLECULAR
BEAM EPITAXY PAGE 1726-1729 D. PRITCHETT, W. HENDERSON, D. BILLINGSLEY,
AND W. A. DOOLITTLE INGAN COMPOSITIONAL PATTEMING BY ULTRAVIOLET
PHOTOEXCITATION DURING NH 3 -BASED MOMBE - A PATHWAY TO 3D EPITAXY PAGE
1730-1732 S. HIRANO, T. INOUE, G. SHIKATA, M. ORIHARA, Y. HIJIKATA, H.
YAGUCHI, S. YOSHIDA, AND Y. HIRABAYASHI PHOTOLUMINESCENCE STUDY OF
HEXAGONAL INN/INGAN QUANTUM WELL STRUCTURES GROWN ON 3C-SIC(001)
SUBSTRATES BY MOLECULAR BEAM EPITAXY PAGE 1733-1735 T. IVE, T.
BEN-YAACOV, H. ASAMIZU, C. G. VAN DE WALLE, U. MISHRA, S. P. DENBAARS,
AND J. S. SPECK PROPERTIES OF ZNO(0001) LAYERS GROWN BY METALORGANIC
CHEMICAL VAPOR DEPOSITION ON GAN(0001) TEMPLATES PAGE 1736-1739 SHEN-JIE
WANG, NOLA LI, EUN-HYUN PARK, ZHE CHUAN FENG, ADRIANA VALENCIA, JEFF
NAUSE, MATTHEW KANE, CHRIS SUMMERS, AND LAN FERGUSON MOCVD GROWTH OF
GAN-BASED MATERIALS ON ZNO SUBSTRATES PAGE 1740-1742 SHALINI GUPTA, HUN
KANG, MATTHEW H. KANE, EUN-HYUN PARK, AND LAN T. FERGUSON GROWTH AND
MAGNETIZATION STUDY OF TRANSITION METAL DOPED GAN NANOSTRUCTURES PAGE
1743-1745 R. DATTA, C MCALEESE, P. CHERNS, F. D. G. RAYMENT, AND C J.
HUMPHREYS ORIGIN OF ADDITIONAL THREADING DISLOCATIONS IN ALGAN GROWN ON
GAN USING AIN AS AN INTERLAYER PAGE 1746-1749 J. SAIDA, E. H. KIM, T.
HIKOSAKA, Y. HONDA, M. YAMAGUCHI, AND N. SAWAKI ENERGY RELAXATION
PROCESSES OF PHOTO-GENERATED CARRIERS IN MG DOPED (0001)GANAND(LT01)GAN
PAGE 1750-1752 A. R. AREHART, A. CORRION, C POBLENZ, J. S. SPECK, U. K.
MISHRA, S. P. DENBAARS, AND S. A. RINGEL COMPARISON OF DEEP LEVEL
INCORPORATION IN AMMONIA AND RF-PLASMA ASSISTED MOLECULAR BEAM EPITAXY
N-GAN FILMS PAGE 1753-1755 C. B. SOH, S. J. CHUA, S. H. SIM, S.
TRIPATHY, AND E. ALVES LUMINESCENCE AND VIBRATIONAL PROPERTIES OF
ERBIUM-IMPLANTED NANOPOROUS GAN PAGE 1756-1758 NESTOR PEREA-LOPEZ,
JONATHAN H. TAO, JOANNA MCKITTRICK, JAN B. TALBOT, M. RAUKAS, J. LASKI,
K. C MISHRA, AND GUSTAVO HIRATA EU 3+ ACTIVATED GAN THIN FILMS GROWN ON
SAPPHIRE BY PULSED LASER DEPOSITION PAGE 1759-1761 K. KURIHARA, K.
FUKUI, T. YANAGAWA, AND A. YAMAMOTO INFRARED MICRO OPTICAL REFLECTANCE
SPECTRA OF INN WWW.PSS-C.COM 2008 WILEY-VCH VERLAG GMBH & CO. KGAA,
WEINHEIM 1454 CONTENTS PAGE 1762-1764. PAGE 1765-1767 PAGE 1768-1770,
PAGE 1771-1773 PAGE 1774-1776. PAGE 1777-1779 PAGE 1780-1782. PAGE
1783-1785. PAGE 1786-1788. PAGE 1789-1791. PAGE 1792-1794 PAGE 1795-1798
PAGE 1799-1801 A. YAMAMOTO, K. SUGITA, Y. NAGAI, AND A. HASHIMOTO
ETCHING AND OPTICAL DETERIORATION OF NITROGEN-FACE OF WURTZITE INN IN NH
3 AMBIENT K. SUGITA, Y. NAGAI, D. MATSUOKA, A. HASHIMOTO, H. HARIMA, AND
A. YAMAMOTO MARKED IMPROVEMENTS IN ELECTRICAL AND OPTICAL PROPERTIES FOR
MOVPE INN ANNEALED AT A LOW TEMPERATURE (300 C) IN 0 2 ATMOSPHERE P. P.
PASKOV, B. MONEMAR, D. LIDA, T. KAWASHIMA, M. IWAYA, S. KAMIYAMA, H.
AMANO, AND I. AKASAKI NONPOLAR GAN LAYERS GROWN BY SIDEWALL EPITAXIAL
LATERAL OVERGROWTH: OPTICAL EVIDENCES FOR A REDUCED STACKING FAULT
DENSITY K. IWAO, A. YAMAMOTO, AND A. HASHIMOTO NEW NITRIDATION TECHNIQUE
FOR MOSAICITY CONTROL IN RF-MBE INN GROWTH S. B. THAPA, J. HERTKORN, F.
SCHOLZ, G. M. PRINZ, M. FENEBERG, M. SCHIRRA, K. THONKE, R. SAUER, J.
BISKUPEK, AND U. KAISER MOVPE GROWTH OF HIGH QUALITY AIN LAYERS AND
EFFECTS OF SI DOPING L. M. ZHU, T. DETCHPROHM, S. YOU, Y. WANG, Y. XIA,
W. ZHAO, Y. LI, J. SENAWIRATNE, Z. ZHANG, AND C WETZEL V-DEFECT ANALYSIS
IN GREEN AND DEEP GREEN LIGHT EMITTING DIODE STRUCTURES S.-L. WANG,
B.-C. YEH, H.-M. WU, L.-H. PENG, C.-M. LAI, T.-S. KO, T.-C. LU, S.-C.
WANG, AND A.-H. KUNG OPTICAL PROPERTIES OF A-PLANE GAN STRAINED BY
PHOTO-CHEMICALLY GROWN GALLIUM HYDROXIDE K. HARA, T. MORI, H. KOMODA, Y.
OOGI, H. KOMINAMI, AND Y. NAKANISHI FABRICATION OF GAN/AIN BILAYER
PARTICLES BY A VAPOR PHASE METHOD C. F. JOHNSTON, M. J. KAPPERS, J. S.
BARNARD, AND C. J. HUMPHREYS MORPHOLOGICAL STUDY OF NON-POLAR (11 20)
GAN GROWN ON R-PLANE (LT02)SAPPHIRE T. KITAMURA, S. NAKASHIMA, N.
NAKAMURA, K. FURUTA, AND H. OKUMURA RAMAN SCATTERING ANALYSIS OF GAN
WITH VARIOUS DISLOCATION DENSITIES A. L. SYRKIN, V. IVANTSOV, A. USIKOV,
V. A. DMITRIEV, G. CHAMBARD, P. RUTERANA, A. V. DAVYDOV, S. G.
SUNDARESAN, E. LUTSENKO, A. V. MUDRYI, E. D. READINGER, G. D.
CHERN-METCALFE, AND M. WRABACK INN LAYERS GROWN BY THE HVPE Z.
LILIENTAL-WEBER, M. HAWKRIDGE, J. MANGUM, AND 0. KRYLIOUK INN NANORODS
AND NANOWIRES GROWN ON DIFFERENT SUBSTRATES F. BRUNNER, H. PROTZMANN, M.
HEUKEN, A. KNAUER, M. WEYERS, AND M. KNEISSL HIGH-TEMPERATURE GROWTH OF
AIN IN A PRODUCTION SCALE 11 X 2 MOVPE REACTOR 2008 WILEY-VCH VERLAG
GMBH S CO. KGAA, WEINHEIM WWW.PSS-C.COM CONTENTS : I: : ^:- : - - IK.
PHYS. STAT. SOL. (C) 5, NO. 6 (2008) 1455 PAGE 1802-1804 Y. ZHANG, C.
MCALEESE, H. XIU, C. J. HUMPHREYS, R. R. LIETEN, S. DEGROOTE, AND G.
BORGHS STRUCTURAL FEATURES IN GAN GROWN ON A GE(111) SUBSTRATE PAGE
1805-1807 M. KOHNO, T. NAKAMURA, T. KATAOKA, R. KATAYAMA, AND K. ONABE
ELECTRICAL CONDUCTION IN CUBIC GAN FILMS GROWN ON GAAS(001) BY RF-MBE
PAGE 1808-1810 G. SHIKATA, S. HIRANO, T. INOUE, M. ORIHARA, Y. HIJIKATA,
H. YAGUCHI, AND S. YOSHIDA IMPROVEMENT OF THE SURFACE MORPHOLOGY OF
A-PLANE INN USING LOW-TEMPERATURE INN BUFFER LAYERS PAGE 1811-1814 KEJIA
(ALBERT) WANG, THOMAS KOSEL, AND DEBDEEP JENA STRUCTURAL AND TRANSPORT
PROPERTIES OF INN GROWN ON GAN BY MBE PAGE 1815-1817 TIM WERNICKE,
CARSTEN NETZEL, MARKUS WEYERS, AND MICHAEL KNEISSL SEMIPOLAR GAN GROWN
ON M-PLANE SAPPHIRE USING MOVPE PAGE 1818-1821 DA-BING LI, MASAKAZU
AOKI, HIDETO MIYAKE, AND KAZUMASA HIRAMATSU IMPROVED SURFACE MORPHOLOGY
OF FLOW-MODULATED MOVPE GROWN AIN ON SAPPHIRE USING THIN
MEDIUM-TEMPERATURE AIN BUFFER LAYER PAGE 1822-1824 HIDETO MIYAKE,
TAKEHARU ISHII, ATSUSHI MOTOGAITO, AND KAZUMASA HIRAMATSU IMPROVED
OPTICAL PROPERTIES OF ALGAN USING PERIODIC STRUCTURES PAGE 1825-1828 A.
USIKOV, V. SOUKHOVEEV, L. SHAPOVALOVA, A. SYRKIN, 0. KOVALENKOV, A.
VOLKOVA, V. SIZOV, V. IVANTSOV, AND V. DMITRIEV NEW RESULTS ON HVPE
GROWTH OF AIN, GAN, INN AND THEIR ALLOYS PAGE 1829-1831 A. USIKOV, 0.
KOVALENKOV, V. SOUKHOVEEV, V. IVANTSOV, A. SYRKIN, V. DMITRIEV, A. YU.
NIKIFOROV, S. G. SUNDARESAN, S. J. JELIAZKOV, AND A. V. DAVYDOV
ELECTRICAL AND OPTICAL PROPERTIES OF THICK HIGHLY DOPED P-TYPE GAN
LAYERS GROWN BY HVPE PAGE 1832-1835 D. MAI, T. NIERMANN, J. ZENNECK, M.
ROEVER, A. BEDOYA PINTO, J. MALINDRETOS, M. SEIBT, AND A. RIZZI
INFLUENCE OF THE MN COMPOSITIONAL DISTRIBUTION ON THE MAGNETIC ORDER IN
DILUTED GAMNN LAYERS PAGE 1836-1838 T. ASCHENBRENNER, K. GOEPEL, C
KRUSE, S. FIGGE, AND D. HOMMEL DIRECT MOVPE- AND MBE-GROWTH OF A-PLANE
GAN ON R-PLANE SAPPHIRE PAGE 1839-184 2 STEPHAN FIGGE, HEIKO DARTSCH,
TIMO ASCHENBRENNER, CARSTEN KRUSE, AND DETLEF HOMMEL DISTRIBUTED BRAGG
REFLECTORS IN COMPARISON TO RUGATE AND NESTED SUPER LATTICES - GROWTH,
REFLECTIVITY, AND CONDUCTIVITY PAGE 1843-1845 E. TRYBUS, 0. JANI, S.
BURNHAM, I. FERGUSON, C HONSBERG, M. STEINER, AND W. A. DOOLITTLE
CHARACTERISTICS OF INGAN DESIGNED FOR PHOTOVOLTAIC APPLICATIONS PAGE
1846-1848 G. D. CHERN-METCALFE, E. D. READINGER, H. SHEN, M. WRABACK, G.
KOBLMUELLER, C S. GALLINAT, AND J. S. SPECK INTENSITY-DEPENDENT
PHOTOLUMINESCENCE STUDIES OF THE ELECTRIC FIELD IN N-FACE AND IN-FACE
INN/INGAN MULTIPLE QUANTUM WELLS WWW.PSS-C.COM 2008 WILEY-VCH VERLAG
GMBH & CO. KGAA, WEINHEIM 1456 CONTENTS PAGE 1849-1851 PAGE 1852-1854
PAGE 1855-1858. PAGE 1859-1862 PAGE 1863-1865 PAGE 1866-1869 PAGE
1870-1872. PAGE 1873-1875. PAGE 1876-1878. PAGE 1879-1882 PAGE 1883-1885
PAGE 1886-1888. PAGE 1889-1891 J.-H. RYOU, J. P. LIU, Y. ZHANG, C. A.
HOME, W. LEE, S.-C. SHEN, AND R. D. DUPUIS SURFACE TREATMENT ON THE
GROWTH SURFACE OF SEMI-INSULATING GAN BULK SUBSTRATE FOR LLL-NITRIDE
HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS S. NIKISHIN, B. BORISOV, V.
KURYATKOV, D. SONG, M. HOLTZ, G. A. GARRETT, W. L. SARNEY, A. V.
SAMPATH, H. SHEN, AND M. WRABACK LUMINESCENCE PROPERTIES OF AL X GA,_ X
N (0.4 X 0.5)/AL Y GA,_ N (0.6 EPITAXY S. D. BURNHAM, W. HENDERSON,
AND W. A. DOOLITTLE CLOSED-IOOP MBE GROWTH OF DROPLET-FREE GAN WITH VERY
METAL RIEH CONDITIONS USING METAL MODULATED EPITAXY WITH MG AND IN V.
DARAKCHIEVA, M. BECKERS, L. HULTMAN, M. XIE, B. MONEMAR, J.-F. CARLIN,
AND N. GRANDJEAN STRAIN AND COMPOSITIONAL ANALYSES OF AL-RICH AL R JN X
N FILMS GROWN BY MOVPE: IMPACT ON THE APPLICABILITY OF VEGARD S RULE K.
D. MATTHEWS, X. CHEN, D. HAO, W. J. SCHAFF, AND L. F. EASTMAN MBE GROWTH
AND CHARACTERIZATION OF MG-DOPED INGAN AND INALN N. MILLER, R. E. JONES,
K. M. YU, J. W. AGER, Z. LILIENTAL-WEBER, E. E. HALLER, W. WALUKIEWICZ,
T. L. WILLIAMSON, AND M. A. HOFFBAUER LOW-TEMPERATURE GROWN
COMPOSITIONALLY GRADED INGAN FILMS H. SAKUTA, T. FUKUI, T. MIYACHI, S.
KURAI, AND T. TAGUCHI HIGH-RESOLUTION RUTHERFORD BACKSCATTERING
SPECTROMETRY FOR INAIGAN/AIGAN SINGLE QUANTUM WELL STRUETURE YU CAO,
KEJIA WANG, AND DEBDEEP JENA ELECTRON TRANSPORT PROPERTIES OF LOW
SHEET-RESISTANCE TWO-DIMENSIONAL ELECTRON GASES IN ULTRATHIN ALN/GAN
HETEROJUNETIONS GROWN BY MBE A. HASHIMOTO, K. IWAO, AND A. YAMAMOTO A
TRADE-OFF RELATION BETWEEN TILT AND TWIST ANGLE FLUETUATIONS IN INN
GROWN BY RF-MBE SHUNSUKE ISHIZAWA, AKIHIKO KIKUCHI, AND KATSUMI KISHINO
SELECTIVE GROWTH OF GAN NANOCOLUMNS ON PREDEPOSITED AI PATTEMS BY
RF-PLASMA-ASSISTED MOLECULAR-BEAM EPITAXY K. SEBALD, H. LOHMEYER, S.
HERLUFSEN, J. KALDEN, J. GUTOWSKI, C TESSAREK, T. YAMAGUCHI, AND D.
HOMMEL OPTICAL PROPERTIES OF SINGLE AND MULTI-LAYER INGAN QUANTUM DOTS
K. Y. LAI, V. D. WHEELER, J. A. GRENKO, M. A. L. JOHNSON, A. D. HANSER,
E. A. PREBLE, L. LIU, T. PASKOVA, AND K. R. EVANS ENLARGEMENT OF BULK
NON-POLAR GAN SUBSTRATES BY HVPE REGROWTH JONATHAN H. TAO, NESTOR
PEREA-LOPEZ, JOANNA MCKITTRICK, JAN B. TALBOT, KEITH KLINEDINST, MADIS
RAUKAS, JOSEPH LASKI, KAILASH C. MISHRA, AND GUSTAVO HIRATA SYNTHESIS OF
RARE-EARTH ACTIVATED AIN AND GAN POWDERS VIA A THREE-STEP CONVERSION
PROCESS 2008 WILEY-VCH VERLAG GMBH & CO. KGAA, WEINHEIM WWW.PSS-C.COM
CONTENTS MMMMM PHYS. STAT. SOL. (C) 5, NO. 6 (2008) 1457 ELECTRONIC
DEVICES PAGE 1892-1894 B. K. LI, K. J. CHEN, K. M. LAU, W. K. GE, AND J.
N. WANG (INVITED) CHARACTERIZATION OF FLUORINE-PLASMA-INDUCED DEEP
CENTERS IN ALGAN/GAN HETEROSTRUCTURE BY PERSISTENT PHOTOCONDUCTIVITY
PAGE 1895-189 7 H. CHEN, Z. LAI, S. KUNG, R. PENNER, AND G. P. LI
(INVITED) ELECTROLUMINESCENCE CHARACTERISTICS OF GAN HEMT AT OFF-STATE
PAGE 1898-1901 K. HORIO AND A. NAKAJIMA ANALYSIS OF BUFFER-TRAPPING
EFFECTS ON GATE LAG, DRAIN LAG AND CURRENT COLLAPSE IN ALGAN/GAN HEMTS
PAGE 1902-1905 R. AIDAM, L. KIRSTE, M. KUNZER, S. MUELLER, AND P.
WALTEREIT PLASMA ASSISTED MOLECULAR BEAM EPITAXY OF ALGAN/GAN HIGH
ELECTRON MOBILITY TRANSISTORS PAGE 1906-1909 T. FUJII, S. NAKAMURA, K.
MIZUNO, R. NEGA, M. IWAYA, S. KAMIYAMA, H. AMANO, AND I. AKASAKI HIGH
DRAIN CURRENT AND LOW ON RESISTANCE NORMALLY-OFF-MODE ALGAN/GAN JUNCTION
HFETS WITH A P-TYPE GAN GATE CONTACT PAGE 1910-1913 K. TONISCH, C
BUCHHEIM, F. NIEBELSCHUETZ, M. DONAHUE, R. GOLDHAHN, V. CIMALLA, AND 0.
AMBACHER PIEZOELECTRIC ACTUATION OF ALL-NITRIDE MEMS PAGE 1914-1916 F.
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STEPHAN, M. HEIN, AND 0. AMBACHER ALGAN/GAN-BASED MEMS WITH
TWO-DIMENSIONAL ELECTRON GAS FOR NOVEL SENSOR APPLICATIONS PAGE
1917-1919 AKIRA ENDOH, ISSEI WATANABE, YOSHIMI YAMASHITA, TAKASHI
MIMURA, AND TOSHIAKI MATSUI CRYOGENIC CHARACTERISTICS OF SUB-100-NM-GATE
ALGAN/GAN MIS-HEMTS PAGE 1920-1922 NARIAKI IKEDA, KAZUO KATO, JIANG LI,
SYUSUKE KAYA, TAKEHIKO NOMURA, MITSURU MASUDA, AND SEIKOH YOSHIDA POWER
ALGAN/GAN HFETS WITH EXCELLENT V B /R ON FOR HIGH SPEED SWITCHING PAGE
1923-1925 S. SUGIURA, S. KISHIMOTO, T. MIZUTANI, M. KURODA, T. UEDA, AND
T. TANAKA NORMALLY-OFF ALGAN/GAN MOSHFETS WITH HF0 2 GATE OXIDE PAGE
1926-1928 M. FIEGER, M. EICKELKAMP, W. ZHANG, L. RAHIMZADEH KHOSHROO, C.
MAUDER, Y. DIKME, M. HEUKEN, A. NOCULAK, H. KAIISCH, R. H. JANSEN, AND
A. VESCAN AHNN/GAN HEMTS ON SAPPHIRE: DE AND PULSED CHARACTERISATION
PAGE 1929-1931 M. ITO, S. KISHIMOTO, F. NAKAMURA, AND T. MIZUTANI
ENHANCEMENT-MODE ALGAN/GAN HEMTS WITH THIN INGAN CAP LAYER PAGE
1932-1934 SEIKOH YOSHIDA, MITSURU MASUDA, YUKI NIIYAMA, HIROSHI
KAMBAYASHI, TAKEHIKO NOMURA, AND NARIAKI IKEDA POWER FACTOR CORRECTION
CIREUIT APPLICATION USING ALGAN/GAN HFETS WWW.PSS-C.COM 2008 WILEY-VCH
VERLAG GMBH & CO. KGAA, WEINHEIM 1458 CONTENTS PAGE 1935-1937. PAGE
1938-1940. PAGE 1941-1943 PAGE 1944-1946. PAGE 1947-1949 PAGE 1950-1952.
PAGE 1953-1955 PAGE 1956-1958 PAGE 1959-1961 PAGE 1962-1964. PAGE
1965-1967 PAGE 1968-1970 R. STOKLAS, S. GAZI, D. GREGUSOVAE, J. NOVAEK,
AND P. KORDOS ENHANCEMENT OF EFFECTIVE CARRIER VELOCITY IN ALGAN/GAN
MOSHFETS WITH AL 2 0 3 GATE OXIDE M. KOCAN, G. A. UMANA-MEMBRENO, F.
RECHT, A. BAHARIN, N. A. FICHTENBAUM, L. MCCARTHY, S. KELLER, R.
MENOZZI, U. K. MISHRA, G. PARISH, AND B. D. NENER GAN VERTICAL N-P
JUNCTIONS PREPARED BY SI ION IMPLANTATION F. R. HU, R. ITO, Y. ZHAO, AND
K. HANE GAN-SI-MEMS STRUCTURE FABRICATED FROM NANO-COLUMN GAN QUANTUM
WELL CRYSTAL GROWN ON SI SUBSTRATE JING YAO ZHENG, JENQ SHINN WU, DER
YUH LIN, AND HUNG JI LIN A COMPARATIVE STUDY ON SINGLE AND DOUBLE
CHANNEL ALGAN/GAN HIGH ELECTRON MOBILITY TRANSISTOR A. EL FATIMY, F.
TEPPE, S. BOUBANGA, N. DYAKONOVA, B. GIL, D. COQUILLAT, D. SELIUTA, G.
VALUSIS, M.-A. POISSON, E. MORVAN, CH. GAQUIERE, D. THERON, A. CAPPY,
AND W. KNAP NITRIDE BASED NANOTRANSISTORS AS NEW SOURCES AND DETECTORS
OF THZ RADIATIONS J. HERTKORN, P. BRUECKNER, C. GAO, F. SCHOLZ, A.
CHUVILIN, U. KAISER, U. WURSTBAUER, AND W. WEGSCHEIDER TRANSPORT
PROPERTIES IN N-TYPE ALGAN/ALN/GAN-SUPERLATTICES F. TIAN AND E. F. CHOR
RHODIUM-BASED SCHOTTKY CONTACTS ON N-DOPED GALLIUM NITRIDE G. POZZOVIVO,
J. KUZMIK, S. GOLKA, K. OECO, K. FROEHLICH, J.-F. CARLIN, M. GONSCHOREK,
N. GRANDJEAN, W. SCHRENK, G. STRASSER, AND D. POGANY INFLUENCE OF GAN
CAPPING ON PERFORMANCE OF INALN/ALN/GAN MOS-HEMT WITH AL 2 0 3 GATE
INSULATION GROWN BY CVD M. AKAZAWA AND H. HASEGAWA HIGH TEMPERATURE
SENSING CHARACTERISTICS OF A HIGH PERFORMANCE PD/AIGAN/GAN SCHOTTKY
DIODE HYDROGEN SENSOR OBTAINED BY OXYGEN GETTERING S. ELHAMRI, W. C.
MITCHEL, R. BERNEY, M. AHOUJJA, J. C. ROBERTS, P. RAJAGOPAL, J. W. COOK
JR., E. L. PINER, AND K. J. LINTHICUM IMPACT OF AIN INTERLAYER ON THE
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LORENZ, V. LEBEDEV, F. NIEBELSCHUETZ, S. HAUGUTH, 0. AMBACHER, J. A.
SCHAEFER, AND S. KRISCHOK CHARACTERIZATION OF GAN-BASED LATERAL POLARITY
HETEROSTRUCTURES NORIMICHI NOGUCHI, TOMOAKI OHASHI, NORIHIKO KAMATA, AND
HIDEKI HIRAYAMA IMPROVEMENT OF SURFACE ROUGHNESS AND REDUCTION OF
THREADING DISLOCATION DENSITY IN ALN/AIGAN TEMPLATES ON SAPPHIRE BY
EMPLOYING TRIMETHYLALUMINUM PULSED SUPPLY GROWTH » 2008 WILEY-VCH VERLAG
GMBH & CO. KGAA, WEINHEIM WWW.PSS-C.COM CONTENTS PHYS. STAT. SOL. (C) 5,
NO. 6 (2008) 1459 PAGE 1971-1973 R. CUERDO, F. CALLE, A. F. BRANA, Y.
CORDIER, M. AZIZE, N. BARON, S. CHENOT, AND E. MUNOZ HIGH TEMPERATURE
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1974-1976 E. SILLERO, D. LOEPEZ-ROMERO, A. BENGOECHEA, M. A.
SAENCHEZ-GARCIA, AND F. CALLE FABRICATION AND STRESS RELIEF MODELLING OF
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RAMOEN COLLAZO, SEIJI MITA, ANTHONY RICE, RAFAEL DALMAU, PATRICK
WELLENIUS, JOHN MUTH, AND ZLATKO SITAR FABRICATION OF A GAN P/N LATERAL
POLARITY JUNCTION BY POLAR DOPING SELECTIVITY PAGE 1980-1982 K. A.
BULASHEVICH, S. YU. KARPOV, YU. N. MAKAROV, T. S. ZHELEVA, P. B. SHAH,
M. A. DERENGE, AND K. A. JONES ASSESSMENT OF THE PENDEO-EPITAXY EFFECT
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HYUN, S.-L. AHN, K.-W. KIM, H.-L. CHO, J.-B. HA, AND J.-H. LEE INTERFACE
CHARACTERIZATION OF ALD DEPOSITED AL 2 0 3 ON GAN BY CV METHOD PAGE
1995-1997 X. Q. SHEN, H. SAZAWA, AND H. OKUMURA RF-MBE GROWTH AND
CHARACTERIZATIONS OF ALGAN/GAN HEMTS ON VICINAL SAPPHIRE (0001)
SUBSTRATES PAGE 1998-2000 T. IDE, M. SHIMIZU, S. YAGI, M. INADA, G.
PIAO, Y. YANO, N. AKUTSU, H. OKUMURA, AND K. ARAI LOW ON-RESISTANCE
ALGAN/GAN HEMTS BY REDUCING GATE LENGTH AND SOURCE-GATE LENGTH PAGE 2001
-2003 H. Y. KIM, T. V. CUONG, H. G. KIM, 0. H. CHA, J. Y. PARK, Y. S.
LEE, H. JEONG, C.-H. HONG, E.-K. SUH, M. S. JEONG, AND H. S. CHEONG
GROWTH OF PERIODIC MICROPITS INGAN-BASED LED STRUCTURE ON WET-ETCH
PATTERNED SAPPHIRE SUBSTRATE PAGE 2004-2006 S. YAGI, M. SHIMIZU, T. IDE,
Y. YANO, AND N. AKUTSU EFFECTS OF SURFACE PASSIVATION FILMS ON ALGAN/GAN
HEMT WITH MIS GATE STRUCTURE WWW.PSS-C.COM 2008 WILEY-VCH VERLAG GMBH
& CO. KGAA, WEINHEIM 1 ****: ^ M LIMMMMMM 1460 CONTENTS PAGE
2007-2009. PAGE 2010-2012 PAGE 2013-2015_ PAGE 2016-2018. PAGE
2019-2021. PAGE 2022-2025. PAGE 2026-2029 -2032 PAGE 2030- PAGE 2033-
PAGE2037-2040 -2036 PAGE 2041 -2043 PAGE 2044-2046. PAGE 2047-2049 A.
NAKAMURA, N. YANAGITA, T. MURATA, K. HOSHINO, AND K. TADATOMO EFFECTS OF
SAPPHIRE SUBSTRATE MISORIENTATION ON THE GAN-BASED LIGHT EMITTING DIODE
GROWN BY METALORGANIC VAPOUR PHASE EPITAXY M. GERMAIN, K. CHENG, J.
DERLUYN, S. DEGROOTE, J. DAS, A. LORENZ, D. MARCON, M. VAN HOVE, M.
LEYS, AND G. BORGHS LN-SITU PASSIVATION COMBINED WITH GAN BUFFER
OPTIMIZATION FOR EXTREMELY LOW CURRENT DISPERSION AND LOW GATE LEAKAGE
IN SI 3 N 4 /AIGAN/GAN HEMT DEVICES ON SI(111) JUNXIA SHI, Y. C. CHOI,
M. POPHRISTIC, M. G. SPENCER, AND L. F. EASTMAN HIGH BREAKDOWN VOLTAGE
ALGAN/GAN HETEROJUNCTION FIELD EFFECT TRANSISTORS ON SAPPHIRE W. HUANG,
T. KHAN, AND T. P. CHOW OPTIMIZATION OF GAN MOS CAPACITORS AND FETS V.
TILAK, K. MATOCHA, AND G. DUENNE FABRICATION AND CHARACTERIZATION OF
M-PLANE (1100) GAN BASED METAL-OXIDE-SEMICONDUCTOR CAPACITORS K. S.
BOUTROS, K. SHINOHARA, W. HA, A. PANIAGUA, AND B. BRAR LATERALLY
ENGINEERED FIELD-PLATE GAN HEMTS FOR MILLIMETER-WAVE APPLICATIONS DANIEL
S. GREEN, BHARATH VEMBU, DAVID HEPPER, SHAWN R. GIBB, DANIEL JIN, RAMA
VETURY, JEFFREY B. SHEALY, L. THOMAS BEECHEM, AND SAMUEL GRAHAM GAN HEMT
THERMAL BEHAVIOR AND IMPLICATIONS FOR RELIABILITY TESTING AND ANALYSIS
TOM ZIMMERMANN, DAVID DEEN, YU CAO, DEBDEEP JENA, AND HUILI GRACE XING
FORMATION OF OHMIC CONTACTS TO ULTRA-THIN CHANNEL ALN/GAN HEMTS TAMARA
BAKSHT, YARON KNAFO, LLANIT YEHUDA, AND GREGORY BUNIN PERFORMANCE
STABILITY OF ALGAN/GAN HFET: EFFECT OF PLASMA PROCESSING M. KANAMURA, T.
OHKI, K. IMANISHI, K. MAKIYAMA, N. OKAMOTO, T. KIKKAWA, N. HARA, AND K.
JOSHIN HIGH POWER AND HIGH GAIN ALGAN/GAN MIS-HEMTS WITH HIGH-K
DIELECTRIC LAYER L. RAHIMZADEH KHOSHROO, C. MAUDER, W. ZHANG, M. FIEGER,
M. EICKELKAMP, Y. DIKME, J. WOITOK, P. NIYAMAKOM, A. VESCAN, H. KAIISCH,
M. HEUKEN, AND R. H. JANSEN OPTIMISATION OF ALINN/GAN HEMT STRUCTURES M.
MICOVIC, A. KURDOGHLIAN, P. HASHIMOTO, M. HU, M. ANTCLIFFE, P. J.
WILLADSEN, W. S. WONG, R. BOWEN, I. MILOSAVLJEVIC, Y. YOON, A. SCHMITZ,
M. WETZEL, AND D. H. CHOW GAN MMICS FOR RF POWER APPLICATIONS IN THE 50
GHZ TO 110 GHZ FREQUENCY RAENGE DAVID DEEN, TOM ZIMMERMANN, YU CAO,
DEBDEEP JENA, AND HUILI GRACE XING 2.3 NM BARRIER ALN/GAN HEMTS WITH
INSULATED GATES I 2008 WILEY-VCH VERLAG GMBH & CO. KGAA, WEINHEIM
WWW.PSS-C.COM CONTENTS :::;; : ;:; ; ;:IIL.;:::.;;::,;,:.;:::
**..,::;::. .-T::,:::».,:: :::, . -: : ;;::^: : - = :^ IIUBIIWII J
^^SHRMHH PHYS. STAT. SOL. (C) 5, NO. 6 (2008) 1461 OPTICAL DEVICES PAGE
2050-2052 M. PETER, A. LAUBSCH, P. STAUSS, A. WALTER, J. BAUR, AND B.
HAHN (INVITED) GREEN THINGAN POWER-LED DEMONSTRATES 100 IM PAGE
2053-2055 MEREDITH L REED, MICHAEL WRABACK, A. LUNEV, Y. BILENKO, X. HU,
A. SATTU, J. DENG, M. SHATALOV, AND R. GASKA DEVICE SELF-HEATING EFFECTS
IN DEEP UV LEDS STUDIED BY SYSTEMATIC VARIATION IN PULSED CURRENT
INJECTION PAGE 2056-2058 B. CORBETT, D. ZHU, B. ROYCROFT, P. MAASKANT,
M. AKHTER, C. MCALEESE, M. J. KAPPERS, AND C. J. HUMPHREYS HIGH
BRIGHTNESS NEAR-ULTRAVIOLET RESONANT LEDS PAGE 2059-2062 T. WUNDERER, F.
LIPSKI, J. HERTKORN, P. BRUECKNER, F. SCHOLZ, M. FENEBERG, M. SCHIRRA, K.
THONKE, A. CHUVILIN, AND U. KAISER BLUISH-GREEN SEMIPOLAR GALNN/GAN
LIGHT EMITTING DIODES ON {1T01} GAN SIDE FACETS PAGE 2063-2065 KANG JEA
LEE, TAE SU OH, EUN KYUNG SUH, KYU HWAN SHIM, AND KEE YOUNG LIM OPTICAL
PROPERTIES OF INGAN/GAN MQW MICRODISK ARRAYS ON GAN/SI(111)TEMPLATE PAGE
2066-2069 K. A. BULASHEVICH AND S. YU. KARPOV IS AUGER RECOMBINATION
RESPONSIBLE FOR THE EFFICIENCY ROLLOVER IN LLL-NITRIDE LIGHT-EMITTING
DIODES? PAGE 2070-2072 M. V. BOGDANOV, K. A. BULASHEVICH, I. YU.
EVSTRATOV, AND S. YU. KARPOV CURRENT SPREADING, HEAT TRANSFER, AND LIGHT
EXTRACTION IN MULTI-PIXEL LED ARRAY PAGE 2073-2076 HARALD BRAUN, TOBIAS
MEYER, DOMINIK SCHOLZ, ULRICH T. SCHWARZ, STEFANIE BRUENINGHOFF, ALFRED
LELL, AND UWE STRAUSS SPECTRAL AND TIME RESOLVED SCANNING NEAR-FIELD
MICROSCOPY OF BROAD AREA 405 NM INGAN LASER DIODE DYNAMICS PAGE
2077-2079 UWE STRAUSS, CHRISTOPH EICHLER, CHRISTIAN RUMBOLZ, ALFRED
LELL, STEPHAN LUTGEN, SOENKE TAUTZ, MARC SCHILLGALIES, AND STEFANIE
BRUENINGHOFF BEAM QUALITY OF BLUE INGAN LASER FOR PROJECTION PAGE
2080-2082 C. W. KUO, C. M. CHEN, H. C FENG, AND C. H. KUO RELIABLE
NITRIDE-BASED NEAR-ULTRAVIOLET LIGHT-EMITTING DIODES WITH MESHED P-GAN
PAGE 2083-2085 FUMI O ISHIDA, KAZUMASA YOSHIMURA, KATSUYUKI HOSHINO, AND
KAZUYUKI TADATOMO IMPROVED LIGHT EXTRACTION EFFICIENCY OF GAN-BASED
LIGHT EMITTING DIODES BY USING NEEDLE-SHAPE INDIUM TIN OXIDE P-CONTACT
PAGE 2086-2088 H. ISHIKAWA, T. JIMBO, AND T. EGAWA GALNN LIGHT EMITTING
DIODES WITH ALINN/GAN DISTRIBUTED BRAGG REFLECTOR ON SI WWW.PSS-C.COM
2008 WILEY-VCH VERLAG GMBH & CO. KGAA, WEINHEIM 1462 CONTENTS PAGE
2089-2091 PAGE 2092-2095 PAGE 2096-2098 PAGE 2099-2101 PAGE 2102-2104.
PAGE 2105-2107 PAGE 2108-2110. PAGE 2111-2113 PAGE 2114-2116. PAGE
2117-2119 PAGE 2120-2122 PAGE 2123-2125 PAGE 2126-2128 MARTIN FENEBERG,
FRANK LIPSKI, MARTIN SCHIRRA, ROLF SAUER, KLAUS THONKE, THOMAS WUNDERER,
PETER BRUECKNER, AND FERDINAND SCHOLZ HIGH QUANTUM EFFICIENCY OF
SEMIPOLAR GALNN/GAN QUANTUM WELLS D. J. AS, J. SCHOERMANN, E. TSCHUMAK,
K. LISCHKA, E. A. DECUIR, AND M. 0. MANASREH GROWTH OF NONPOLAR CUBIC
GAN/AIN MULTIPLE QUANTUM WELLS WITH INTERSUBBAND TRANSITIONS FOR 1.5 JIM
APPLICATIONS G. TAMULAITIS, J. MICKEVICIUS, E. KUOKSTIS, K. LIU, M. S.
SHUR, J. P. ZHANG, AND R. GASKA CARRIER DYNAMICS IN WIDE-BAND-GAP
ALGAN/AIGAN QUANTUM WELLS CHUN-FENG LAI, H. C. KUO, C. H. CHAO, H. T.
HSUEH, J.-F. T. WANG, W. Y. YEH, J. Y. CHI, T. C. LU, AND S. C. WANG
AZIMUTHAI ANISOTROPY OF LIGHT EXTRACTION FROM PHOTONIC CRYSTAL
LIGHT-EMITTING DIODES T. TAKANO, S. FUJIKAWA, Y. KONDO, AND H. HIRAYAMA
REMARKABLE IMPROVEMENT IN OUTPUT POWER FOR AN INAIGAN BASED ULTRAVIOLET
LED BY IMPROVING THE CRYSTALLINE QUALITY OF AIN/AIGAN TEMPLATES H. JIMI,
T. INADA, M. HORIGUCHI, A. SATAKE, AND K. FUJIWARA COMPARATIVE STUDY OF
TEMPERATURE-DEPENDENT ELECTROLUMINESCENCE EFFICIENCY IN BLUE AND GREEN
(LN,GA)N MULTIPLE-QUANTUM-WELL DIODES ANURAG TYAGI, HONG ZHONG, ROY B.
CHUNG, DANIEL F. FEEZELL, MAKOTO SAITO, KENJI FUJITO, JAMES S. SPECK,
STEVEN P. DENBAARS, AND SHUJI NAKAMURA INGAN/GAN LASER DIODES ON
SEMIPOLAR (10 1 1) BULK GAN SUBSTRATES E. Y. LIN, C. Y. CHEN, T. S. LAY,
T. C. WANG, J. D. TSAY, P. X. PENG, AND T. Y. LIN INTERNAL QUANTUM
EFFICIENCY AND OPTICAL POLARIZATION ANALYSIS OF INGAN/GAN MULTIPLE
QUANTUM WELLS ON A-PLANE GAN T. ISHIGURO, Y. TODA, S. ADACHI, K.
HOSHINO, AND Y. ARAKAWA DEPHASING STUDIES OF EXCITON FINE STRUCTURE IN
UNIAXIALLY-STRAINED GAN S. HAUGUTH-FRANK, V. LEBEDEV, H.-J. BUECHNER, G.
JAEGER, AND O. AMBACHER ULTRA-THIN INGAN PHOTODETECTORS FOR STANDING WAVE
INTERFEROMETRY L. NEVOU, F. H. JULIEN, M. TCHERNYCHEVA, F. GUILLOT, E.
SARIGIANNIDOU, AND E. MONROY NEAR-INFRARED INTERSUBBAND EMISSION FROM
GAN/AIN QUANTUM DOTS AND QUANTUM WELLS A. SATAKE, K. SOEJIMA, H. AIZAWA,
AND K. FUJIWARA ENHANCED CAPTURE OF PHOTOGENERATED CARRIERS BY OPTIMUM
FORWARD BIAS CONDITION IN BLUE AND GREEN (LN,GA)N SINGLE-QUANTUM-WELL
DIODES KAZUNOBU KOJIMA, MITSURU FUNATO, YOICHI KAWAKAMI, HARALD BRAUN,
ULRICH SCHWARZ, SHINICHI NAGAHAMA, AND TAKASHI MUKAI INHOMOGENEOUSLY
BROADENED OPTICAL GAIN SPECTRA OF INGAN QUANTUM WELL LASER DIODES AE 2008
WILEY-VCH VERLAG GMBH & CO. KGAA, WEINHEIM WWW.PSS-C.COM CONTENTS PHYS.
STAT. SOL. (C) 5, NO. 6 (2008) 1463 PAGE 2129-2132 PAGE 2133-2135 PAGE
2136-2138 PAGE 2139-2141 PAGE 2142-2144 PAGE 2145-2147 PAGE 2148-2151
PAGE 2152-2154 PAGE 2155-2157 PAGE 2158-2160 PAGE 2161-2163 TAKUYA
HOSHI, TAKAHIRO KOYAMA, MARIKO SUGAWARA, AKIRA UEDONO, JOHN F. KAEDING,
RAJAT SHARMA, SHUJI NAKAMURA, AND SHIGEFUSA F. CHICHIBU CORRELATION
BETWEEN THE VIOLET LUMINESCENCE INTENSITY AND DEFECT DENSITY IN AIN
EPILAYERS GROWN BY AMMONIA-SOURCE MOLECULAR BEAM EPITAXY M. MAIER, K.
KOEHLER, M. KUNZER, J. WIEGERT, S. LIU, U. KAUFMANN, AND J. WAGNER
ENHANCEMENT OF (AIGALN)N NEAR-UV LED EFFICIENCY USING FREESTANDING GAN
SUBSTRATE Y. F. CHEN, W. C. CHEN, R. W. CHUANG, Y. K. SU, AND H. L. TSAI
EFFECT OF ALGAAS CLADDING LAYER ON GALNNAS/GAAS MQW P-I-N PHOTODETECTOR
WEN-CHIEN YU, SHU-MEI YE, FENG-KE HSIAO, CHI-UENG LEE, AND WEI-I LEE
FORMATION OF NITRIDE LASER CAVITIES WITH CLEAVED FACETS ON TRANSFERRED
LASER DIODES ON GAAS SUBSTRATES K. LIDA, H. WATANABE, K. TAKEDA, F.
MORI, H. TSUZUKI, Y. YAMASHITA, M. IWAYA, S. KAMIYAMA, H. AMANO, I.
AKASAKI, H. MARUYAMA, T. TAKAGI, AND A. BANDOH OPTIMIZATION OF
UNDERLYING LAYER AND THE DEVICE STRUCTURE FOR GROUP-LLL-NITRIDE-BASED UV
EMITTERS ON SAPPHIRE T. KAWASHIMA, T. HAYAKAWA, M. HAYASHI, T. NAGAI, D.
LIDA, A. MIURA, Y. KASAMATSU, M. IWAYA, S. KAMIYAMA, H. AMANO, AND I.
AKASAKI IMPROVEMENT IN PERFORMANCE OF M-PLANE GALNN LIGHT EMITTING DIODE
GROWN ON M-PLANE SIC BY SIDEWALL EPITAXIAL LATERAL OVERGROWTH R. DAHAL,
J. LI, Z. Y. FAN, M. L. NAKARMI, T. M. AI TAHTAMOUNI, J. Y. LIN, AND H.
X. JIANG AIN MSM AND SCHOTTKY PHOTODETECTORS H. H. YEN, H. C. KUO, AND
W. Y. YEH IMPROVEMENT OF GAN-BASED LED WITH SI0 2 PHOTONIC CRYSTAL ON AN
ITO FILM BY HOLOGRAPHIC LITHOGRAPHY TRAN VIET CUONG, HYUNG GU KIM, MIN
GYU NA, HYUN KYU KIM, HEE YUN KIM, JAE HYOUNG RYU, AND CHANG-HEE HONG
CHARACTERIZATION OF PLASMA DAMAGE-FREE INGAN/GAN LED WITH PERIODIC
DEFLECTORS KOICHI TACHIBANA, HAJIME NAGO, AND SHIN-YA NUNOUE DIRECT
OBSERVATION OF UNIFORM OPTICAL PROPERTIES FROM MICROPHOTOLUMINESCENCE
MAPPING OF INGAN QUANTUM WELLS GROWN ON SLIGHTLY MISORIENTED GAN
SUBSTRATES TE-CHUNG WANG, TSUNG-SHINE KO, TIEN-CHANG LU, HAO-CHUNG KUO,
RUN-CI GAO, JENQ-DAR TSAY, AND SING-CHUNG WANG INTERNAL QUANTUM
EFFICIENCY BEHAVIOR OF A-PLANE AND C-PLANE INGAN/GAN MULTIPLE QUANTUM
WELL WITH DIFFERENT INDIUM COMPOSITIONS WWW.PSS-C.COM 2008 WILEY-VCH
VERLAG GMBH & CO. KGAA, WEINHEIM 1464 CONTENTS PAGE 2164-2166 PAGE
2167-2169 PAGE 2170-2172. PAGE 2173-2175. PAGE 2176-2178. PAGE 2179-2182
PAGE 2183-2185. PAGE 2186-2188. PAGE 2189-2191. PAGE 2192-2194. PAGE
2195-2197. PAGE 2198-2200 PAGE 2201-2203 PAGE 2204-2206. U. JAHN, E.
CALLEJA, J. RISTIC, A. TRAMPERT, AND C. RIVERA SPATIALLY RESOLVED
LUMINESCENCE SPECTROSCOPY OF SINGLE GAN/(AI,GA)N QUANTUM DISKS SHIN-LI
TSAI, JENQ-SHINN WU, HUNG-JI LIN, DER-YUH LIN, AND JIN-YAO ZHENG
SIMULATION AND DESIGN OF INGAASN METAL-SEMICONDUCTOR-METAL
PHOTODETECTORS FOR LONG WAVELENGTH OPTICAL COMMUNICATIONS M. KUNZER,
C.-C. LEANCU, M. MAIER, K. KOEHLER, U. KAUFMANN, AND J. WAGNER WELL WIDTH
DEPENDENT LUMINESCENCE CHARACTERISTICS OF UV-VIOLET EMITTING GALNN QW
LED STRUCTURES H. TEISSEYRE, M. SZYMAHSKI, A. KHACHAPURIDZE, T.
SWIETLIK, C SKIERBISZEWSKI, A. FEDUNIEWICZ-ZMUDA, M. SIEKACZ, B.
TUCZNIK, G. KAMLER, M. KRYSKO, T. SUSKI, P. PERLIN, I. GRZEGORY, AND S.
POROWSKI OPTICALLY PUMPED LASING OF GAN/AIGAN STRUCTURES GROWN ALONG A
NON-POLAR CRYSTALLOGRAPHIC DIRECTION M. ARAI, K. SUGIMOTO, S. EGAWA, AND
T. HONDA FABRICATION OF GAN-BASED UV TF-ELDS BY CS-MBE TECHNIQUE AND
THEIR APPLICATION TO RGB LIGHT-EMITTING PIXELS SUNGMIN HWANG, JOOSUN
YOON, JONGIN SHIM, AND KYUNGYUL YOO EFFECT OF ELECTRODE PATTERN ON LIGHT
EMISSION DISTRIBUTION IN INGAN/GAN LIGHT EMITTING DIODE C. B. SOH, S. J.
CHUA, AND H. HARTONO VOLTAGE TUNABLE WAVELENGTH LEDS S. E. WU, T. H.
HSUEH, C. P. LIU, J. K. SHEU, W. C LAI, AND S. J. CHANG NON-IITHOGRAPHIC
NANOPATTERNING OF INGAN/GAN MULTIPLE QUANTUM WELL NANOPILLARS BY FOCUSED
ION BEAMS S. J. CHUA, C B. SOH, W. LIU, J. H. TENG, S. S. ANG, AND S. L.
TEO QUANTUM DOTS EXCITED INGAN/GAN PHOSPHOR-FREE WHITE LEDS M.
SCHILLGALIES, A. LAUBSCH, ST. LUTGEN, A. AVRAMESCU, G. BRUEDERL, D.
QUEREN, AND U. STRAUSS DEFECT-RELATED RECOMBINATION IN INGAN-LASERS
SHINJI SAITO, TETSUO NARITA, KOTARO ZAIMA, KOICHI TACHIBANA, HAJIME
NAGO, GEN-ICHI HATAKOSHI, AND SHINYA NUNOUE ESTIMATION OF INTERNAL
QUANTUM EFFICIENCY IN INGAN-BASED LIGHT EMITTING DIODES USING
ELECTROLUMINESCENCE DECAY TIMES W. N. NG, C. H. LEUNG, P. T. LAI, AND H.
W. CHOI MICRO-PIXEL LIGHT EMITTING DIODES WITH WAVELENGTH-TUNABLE OUTPUT
K. N. HUI, W. N. NG, C H. LEUNG, P. T. LAI, AND H. W. CHOI POLYCHROMATIC
EMISSION FROM FLUORESCENT-MICROSPHERE-COATED LEDS H. XIU, E. J. THRUSH,
M. KAUER, T. M. SMEETON, S. E. HOOPER, J. HEFFERNAN, AND C J. HUMPHREYS
DEGRADATION OF LLL-NITRIDE LASER DIODES GROWN BY MOLECULAR BEAM EPITAXY
2008 WILEY-VCH VERLAG GMBH & CO. KGAA, WEINHEIM WWW.PSS-C.COM CONTENTS
PHYS. STAT. SOL. (C) 5, NO. 6 (2008) 1465 PAGE 2207-2209 T. DETCHPROHM,
M. ZHU, Y. XIA, Y. LI, W. ZHAO, J. SENAWIRATNE, AND C. WETZEL IMPROVED
PERFORMANCE OF GALNN BASED DEEP GREEN LIGHT EMITTING DIODES THROUGH
V-DEFECT REDUCTION PAGE 2213-2215 JUNGGEUN JHIN, JONG HYEOB BAEK, AND
JAE SANG LEE EFFECTS OF PATTERNED ION IMPLANTED SAPPHIRE SUBSTRATE FOR
LED PAGE 2216-2218 NATALIE FELLOWS, HISASHI MASUI, HITOSHI SATO,
HIROKUNI ASAMIZU, MICHAEL IZA, HONG ZHONG, SHUJI NAKAMURA, AND STEVEN P.
DENBAARS ENHANCEMENT OF EXTERNAL QUANTUM EFFICIENCY IN GAN-BASED LIGHT
EMITTING DIODES USING A SUSPENDED GEOMETRY PAGE 2219-2221 C 0. SAICIANU,
E. J. THRUSH, R. G. PLUMB, A. R. BOYD, 0. ROCKENFELLER, D. SCHMITZ, M.
HEUKEN, AND C. J. HUMPHREYS PALLADIUM-BASED ON-WAFER ELECTROLUMINESCENCE
STUDIES OF GAN-BASED LED STRUCTURES PAGE 2222-2224 TAKAO MIYAJIMA,
SHIGEAKI UEMURA, YOSHIHIRO KUDO, YASUKO TERADA, AND NORIYUKI FUUTAGAWA
DIRECT OBSERVATION OF INDIUM COMPOSITIONAL FLUCTUATION IN GALNN/GAN
MULTI-QUANTUM WELLS USING AN X-RAY MICRO-BEAM FROM THE 8-GEV STORAGE
RING PAGE 2225-2227 T. HONDA, T. KOBAYASHI, S. KOMIYAMA, Y. MASHIYAMA,
M. ARAI, AND K. YOSHIOKA FABRICATION OF GAN-BASED SCHOTTKY-TYPE
LIGHT-EMITTING DIODES FOR MICROPIXELS IN FLAT-PANEL DISPLAYS PAGE
2228-2230 N. TRIPATHI, L. D. BELL, J. R. GRANDUSKY, V. JINDAL, AND F.
SHAHEDIPOUR-SANDVIK GROWTH AND CHARACTERIZATION OF A NOVEL HYPERSPECTRAL
DETECTOR USING THE LLL-NITRIDES PAGE 2231-2233 SHIH-WEI FENG,
TZONG-LIANG TSAI, WEN-HOW LAN, C J. HUANG, AND MING-CHANG SHIH
TIME-RESOLVED ELECTRO-LUMINESCENCE STUDIES OF INGAN BLUE LEDS WITH CHIP
SIZE VARIATIONS PAGE 2234-2237 T. HIKOSAKA, T. TANIKAWA, Y. HONDA, M.
YAMAGUCHI, AND N. SAWAKI FABRICATION AND PROPERTIES OF SEMI-POLAR (1
101) AND (11 22) INGAN/GAN LIGHT EMITTING DIODES ON PATTERNED SI
SUBSTRATES PAGE 2238-2240 F. SCHULZE, A. DADGAR, A. KRTSCHIL, C HUMS, L.
REISSMANN, A. DIEZ, J. CHRISTEN, AND A. KROST MOVPE GROWTH OF BLUE LN X
GA,_ X N/GAN LEDS ON 150 MM SI(001) PAGE 2241-2243 L. F. VOSS, L.
STAFFORD, M. HLAD, B. P. GILA, C. R. ABERNATHY, S. J. PEARTON, F. REN,
AND I. KRAVCHENKO HIGH TEMPERATURE OHMIC CONTACTS TO P-TYPE GAN FOR USE
IN LIGHT EMITTING APPLICATIONS PAGE 2244-2246 A. SYRKIN, V. IVANTSOV, 0.
KOVALENKOV, A. USIKOV, V. DMITRIEV, Z. LILIENTAL-WEBER, M. L. REED, E.
D. READINGER, H. SHEN, AND M. WRABACK FIRST ALL-HVPE GROWN INGAN/INGAN
MQW LED STRUCTURES FOR 460-510 NM WWW.PSS-C.COM 2008 WILEY-VCH VERLAG
GMBH & CO. KGAA, WEINHEIM 1466 CONTENTS PAGE 2247-2249 J. SENAWIRATNE,
W. ZHAO, T. DETCHPROHM, A. CHATTERJEE, Y. LI, M. ZHU, Y. XIA, J. L.
PLAWSKY, AND C. WETZEL JUNCTION TEMPERATURE ANALYSIS IN GREEN LIGHT
EMITTING DIODE DIES ON SAPPHIRE AND GAN SUBSTRATES PAGE 2250-2253 M.
MENEGHINI, L TREVISANELLO, U. ZEHNDER, G. MENEGHESSO, AND E. ZANONI
THERMAL DEGRADATION OF INGAN/GAN LEDS OHMIC CONTACTS PAGE 2254-2256 F.
STOKKER-CHEREGI, A. VINATTIERI, E. FELTIN, D. SIMEONOV, J.-F. CARLIN, R.
BUTTE, N. GRANDJEAN, AND M. GURIOLI BIEXCITON RECOMBINATION IN HIGH
QUALITY GAN/AIGAN QUANTUM WELLS PAGE 2257-2259 F. STOKKER-CHEREGI, A.
VINATTIERI, M. COLOCCI, F. SEMOND, M. LEROUX, J. MASSIES, I. R. SEILERS,
AND M. GURIOLI TEMPERATURE DEPENDENCE OF THE POLARITON RELAXATION
BOTTLENECK IN A GAN MICROCAVITY PAGE 2260-2262 SACHIE FUJIKAWA,
TAKAYOSHI TAKANO, YUKIHIRO KONDO, AND HIDEKI HIRAYAMA REALIZATION OF 340
NM-BAND HIGH-POWER INAIGAN-BASED ULTRAVIOLET LIGHT-EMITTING DIODES BY
THE SUPPRESSION OF ELECTRON OVERFLOW PAGE 2263-2266 E. V. LUTSENKO, A.
V. DANILCHYK, N. P. TARASUK, A. V. ANDRYIEUSKI, V. N. PAVIOVSKII, A. L.
GURSKII, G. P. YABLONSKII, H. KAIISCH, R. H. JANSEN, Y. DIKME, B.
SCHINELLER, AND M. HEUKEN LASER THRESHOLD AND OPTICAL GAIN OF BLUE
OPTICALLY PUMPED INGAN/GAN MULTIPLE QUANTUM WELLS (MQW) GROWN ON SI PAGE
2267-2269 HYUNG GU KIM, TRAN VIET CUONG, HYUN KYU KIM, HEE YUN KIM, JAE
HYUNG RYU, MIN GYU NA, AND CHANG-HEE HONG INGAN/GAN LIGHT EMITTING DIODE
WITH R-PLANE POLYGONAL FACET DEFLECTORS PAGE 2270-2273 P. DAWSON, N. P.
HYLTON, M. J. KAPPERS, C. MCALEESE, AND C. J. HUMPHREYS EFFECTS OF
RESONANT LO PHONON ASSISTED EXCITATION ON THE PHOTOLUMINESCENCE SPECTRA
OF INGAN/GAN QUANTUM WELLS PAGE 2274-2276 HIDEAKI MUROTANI, TAKUYA
SAITO, NOBUO KATO, YOICHI YAMADA, AND TSUNEMASA TAGUCHI RECOMBINATION
DYNAMICS OF LOCALIZED EXCITONS IN ALGAN-BASED QUANTUM WELLS PAGE
2277-2279 A. DRAEGER, D. FUHRMANN, C NETZEL, U. ROSSOW, H. P. D. SCHENK,
AND A. HANGLEITER COMPARISON OF GALNN LASER STRUCTURES GROWN ON
DIFFERENT SUBSTRATES PAGE 2280-2282 SACHIE FUJIKAWA, TAKAYOSHI TAKANO,
YUKIHIRO KONDO, AND HIDEKI HIRAYAMA 340 NM-BAND HIGH-POWER INAIGAN
QUANTUM WELL ULTRAVIOLET LIGHT-EMITTING DIODE USING P-TYPE INAIGAN
LAYERS PAGE 2283-2285 HIDEKI HIRAYAMA, TOHRU YATABE, TOMOAKI OHASHI, AND
NORIHIKO KAMATA REMARKABLE ENHANCEMENT OF 254-280 NM DEEP ULTRAVIOLET
EMISSION FROM ALGAN QUANTUM WELLS BY USING HIGH-QUALITY AIN BUFFER ON
SAPPHIRE 2008 WILEY-VCH VERLAG GMBH & CO. KGAA, WEINHEIM WWW.PSS-C.COM
CONTENTS PHYS. STAT. SOL. (C) 5, NO. 6 (2008) 1467 PAGE 2286-2289 P.
MISRA, C. BONEY, R. PILLAI, D. STARIKOV, AND A. BENSAOULA M-PLANE
LLL-NITRIDE MATERIALS FOR POLARIZATION SENSITIVE DEVICES GROWN BY PAMBE
WITH REAL TIME ANALYSIS BY SPECTROSCOPIC ELLIPSOMETRY PAGE 2290-2292 YUN
ZHANG, DONGWON YOO, JAE-BOUM LIMB, JAE-HYUN RYOU, RUSSELL D. DUPUIS, AND
SHYH-CHIANG SHEN GAN ULTRAVIOLET AVALANCHE PHOTODIODES FABRICATED ON
FREE-STANDING BULK GAN SUBSTRATES PAGE 2293-2295 Y. LI, J. SENAWIRATNE,
Y. XIA, W. ZHAO, M. ZHU, T. DETCHPROHM, AND C. WETZEL PHOTON MODULATED
ELECTROLUMINESCENCE OF GALNN/GAN MULTIPLE QUANTUM WELL LIGHT EMITTING
DIODES PAGE 2296-2298 G. A. GARRETT, M. L. REED, H. SHEN, M. WRABACK, C.
CHUA, AND N. M. JOHNSON TIME-RESOLVED PHOTOLUMINESCENCE STUDIES OF
HIGH-BRIGHTNESS 340-NM LEDS UNDER CURRENT INJECTION PAGE 2299-2302 H.
XU, K. M. DAVITT, W. DONG, Y.-K. SONG, W. R. PATTERSON III, A. V.
NURMIKKO, AND C. D. AIZENMAN INTEGRATION OF A MATRIX ADDRESSABLE
BLUE/GREEN LED ARRAY WITH MULTICORE IMAGING FIBER FOR SPATIOTEMPORAL
EXCITATION IN ENDOSCOPIC BIOMEDICAL APPLICATIONS PAGE 2303-2305 A. V.
SAMPATH, M. L. REED, C. CHUA, G. A. GARRETT, G. DANG, E. D. READINGER,
H. SHEN, A. USIKOV, 0. KOVALENKOV, L. SHAPOVALOVA, V. A. DMITRIEV, N. M.
JOHNSON, AND M. WRABACK DOUBLE HETEROSTRUCTURE ULTRAVIOLET LIGHT
EMITTING DIODES WITH NANOMETER SCALE COMPOSITIONALLY INHOMOGENEOUS
ACTIVE REGIONS PAGE 2306-2308 YONG-SEOK CHOI, MICHAEL IZA, GREGOR
KOBLMUELLER, CHRISTOPHE HURNI, JAMES S. SPECK, CLAUDE WEISBUCH, AND
EVELYN L. HU MICROCAVITY INGAN LIGHT EMITTING DIODES WITH A SINGLE
FABRY-PEROT MODE PAGE 2309-2311 C. THOMIDIS, A. YU. NIKIFOROV, TAO XU,
AND THEODORE D. MOUSTAKAS INGAN-BASED LEDS GROWN BY PLASMA-ASSISTED MBE
ON (0001) SAPPHIRE WITH GAN QDS IN THE NUCLEATION LAYER PAGE 2312-2315
HIDEKI HIRAYAMA AND SACHIE FUJIKAWA QUATERNARY INALGAN QUANTUM-DOT
ULTRAVIOLET LIGHT-EMITTING DIODE EMITTING AT 335 NM FABRICATED BY
ANTI-SURFACTANT METHOD PAGE 2316-2319 TURGUT TUT, MUTLU GOKKAVAS, AND
EKMEL OZBAY ALGA^N-BASED AVALANCHE PHOTODIODES WITH HIGH REPRODUCIBLE
AVALANCHE GAIN PAGE 2320-2322 C. KRUSE, S. FIGGE, H. DARTSCH, C.
TESSAREK, D. HOMMEL, H. LOHMEYER, J. KALDEN, K. SEBALD, AND J. GUTOWSKI
INTEGRATION OF INGAN QUANTUM DOTS INTO NITRIDE-BASED MICROCAVITIES
WWW.PSS-C.COM 2008 WILEY-VCH VERLAG GMBH & CO. KGAA, WEINHEIM 1 UM IA»
A» 1468 CONTENTS PAGE 2323-2325 ASAF ALBO, DAN FEKETE, AND GAD BAHIR
UNPOLARIZED INTERSUBBAND PHOTOCURRENT IN TE DOPED GALNASN/GAALAS QUANTUM
WELL IR PHOTODETECTOR THEORY AND NOVEL APPLICATIONS PAGE 2326-2328 ARON
WALSH AND SU-HUAI WEI FILLING THE GREEN GAP: A FIRST-PRINCIPLES STUDY OF
THE LIMG^NJM ALLOY PAGE 2329-2332 A. ATSUSHI YAMAGUCHI ANISOTROPIE
OPTICAL MATRIX ELEMENTS IN STRAINED GAN-QUANTUM WELLS WITH VARIOUS
SUBSTRATE ORIENTATIONS PAGE 2333-2335 KATSUSHI FUJII, HITOSHI NAKAYAMA,
KEIICHI SATO, TAKASHI KATO, MEOUNG-WHAN CHO, AND TAKAFUMI YAO
IMPROVEMENT OF HYDROGEN GENERATION EFFICIENCY USING GAN
PHOTOELECTROCHEMICAL REACTION IN ELECTROLYTES WITH ALCOHOL PAGE
2336-2338 SHIH-WEI FENG, KUEI-HSIEN CHEN, AND CHIH-MING LAI QUANTUM-SIZE
EFFECT AND INTERSUBBAND TRANSITIONS IN ZINC BLEND AL X GA, J L QUANTUM
CUBES EMBEDDED IN AIN MATRIX PAGE 2339-2341 N. TANG, B. SHEN, X. W. HE,
K. HAN, Y. Q. TANG, Z. J. YANG, Z. X. QIN, G. Y. ZHANG, T. LIN, B. ZHU,
W. Z. ZHOU, L. Y. SHANG, AND J. H. CHU INFLUENCE OF THE ILLUMINATION ON
THE SPIN SPLITTING OF THE TWO-DIMENSIONAL ELECTRON GAS IN AL X GA,_ X
N/GAN HETEROSTRUCTURES PAGE 2342-2344 P. SCHLEY, C NAPIERALA, R.
GOLDHAHN, G. GOBSCH, J. SCHOERMANN, D. J. AS, K. LISCHKA, M. FENEBERG, K.
THONKE, F. FUCHS, AND F. BECHSTEDT BAND GAP AND EFFECTIVE ELECTRON MASS
OF EUBIE INN PAGE 2345-2348 E. GALLARDO, S. LAZIC, J. M. CALLEJA, J.
MIGUEL-SAENCHEZ, M. MONTES, A. HIERRO, R. GARGALLO-CABALLERO, A. GUZMAEN,
E. MUHOZ, A. M. TEWELDEBERHAN, AND S. FAHY LOCAL VIBRATION MODES AND
NITROGEN INCORPORATION IN AIGAAS:N LAYERS PAGE 2349-2351 YASUHIRO IWAKI,
MASATO ONO, KAZUKI YAMAGUCHI, KAZUHIDE KUSAKABE, KATSUSHI FUJII, AND
KAZUHIRO OHKAWA NITRIDE PHOTOCATALYST TO GENERATE HYDROGEN GAS FROM
WATER PAGE 2352-2354 M. ROEVER, D.-D. MAI, A. BEDOYA-PINTO, J.
MALINDRETOS, AND A. RIZZI ELECTRON STABILIZED FERROMAGNETISM IN GAGDN
PAGE 2355-2357 C BRIMONT, M. GALLART, 0. CREGUT, B. HOENERLAGE, AND P.
GILLIOT EXCITONIC SPIN RELAXATION IN GAN PAGE 2358-2360 SIMONE SANNA, B.
HOURAHINE, TH. FRAUENHEIM, AND U. GERSTMANN THEORETICAL STUDY OF RARE
EARTH POINT DEFECTS IN GAN PAGE 2361-2363 B. LUEBBERS, G. KITTLER, P.
ORT, S. LINKOHR, D. WEGENER, B. BAUR, M. GEBINOGA, F. WEISE, M.
EICKHOFF, S. MAROLDT, A. SCHOBER, AND 0. AMBACHER A NOVEL GAN-BASED
MULTIPARAMETER SENSOR SYSTEM FOR BIOCHEMICAL ANALYSIS 2008 WILEY-VCH
VERLAG GMBH & CO. KGAA, WEINHEIM WWW.PSS-C.COM CONTENTS PHYS. STAT. SOL.
(C) 5, NO. 6 (2008) 1469 2364-2366 PAGE 2368-2369 A. ATSUSHI YAMAGUCHI
VALENCE BAND ENGINEERING FOR REMARKABLE ENHANCEMENT OF SURFACE EMISSION
IN ALGAN DEEP-ULTRAVIOLET LIGHT EMITTING DIODES INFORMATION FOR AUTHORS
MOST ACCESSED ARTICLES IN MARCH INVITED ARTICIE HYDROGEN IN
SEMICONDUCTORS: FROM BASIC PHYSICS TO TECHNOLOGY J. WEBER, PHYS. STAT.
SOL. (C) 5, 535 (2008) OPTICAL AND ELECTRICAL CHARACTERIZATION OF THE
BAND STRUCTURE OF POLYANILINE NANOFILMS AND POLYANILINE/SILICON
HETEROJUNCTIONS E. A. DE VASCONCELOS, E. F. DASILVA JR., J. M. G.
LARANJEIRA, W. M. DE AZEVEDO, I. M. PEPE, AND A. FERREIRA DA SILVA,
PHYS. STAT. SOL. (C) 2, 2982 (2005) PHOTOLUMINESENCE AND FTIR STUDY OF
ZNO NANOPARTICLES: THE IMPURITY AND DEFECT PERSPECTIVE G. XIONG, U. PAL,
J. G. SERRANO, K. B. UCER, AND R. T. WILLIAMS, PHYS. STAT. SOL. (C) 3,
3577 (2006) CALCULATION OF THE EXTERNAL QUANTUM EFFICIENCY OF LIGHT
EMITTING DIODES WITH DIFFERENT CHIP DESIGNS T. V. CUONG, H. S. CHEONG,
AND C.-H. HONG, PHYS. STAT. SOL. (C) 1, 2433 (2004) MICROSTRUCTURE OF
NANOPORES IN AAO TEMPLATES FAVORING THE GROWTH OF NICKEL NANOWIRES BY
ELECTRODEPOSITION JONG-HYUN JEONG, SUN-HONG KIM, Y. CHOI, AND SUNG-SOO
KIM, PHYS. STAT. SOL. (C) 4, 4429 (2007) PHYSICA STATUS SOLIDI (C) IS
INDEXED IN CAMBRIDGE SCIENTIFIC ABSTRACTS; CSA TECHNOLOGY RESEARCH
DATABASE (CSA/CIG); CHEMICAL ABSTRACTS SERVICE/SCIFINDER (ACS);
COMPENDEX (ELSEVIER); FIZ KARLSRUHE DATABASES (FIZ KARLSRUHE); GOOGLE
SCHOLAR; INSPEC; PHYSICS ABSTRACTS (IET); ISI INDEX TO SCIENTIFIC &
TECHNICAL PROCEEDINGS; PASCAL DATABASE (INIST/CNRS); SCOPUS (ELSEVIER);
VINITI (ALL-RUSSIAN INSTITUTE OF SCIENCE & TECHNOLOGICAL INFORMATION).
WWW.PSS-C.COM 2008 WILEY-VCH VERLAG GMBH & CO. KGAA, WEINHEIM
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| spelling | Papers presented at the 7th International Conference of Nitride Semiconductors (ICNS-7) Las Vegas, Nevada, USA, 16 - 21 September 2007 guest ed.: Tomas Palacios ... Weinheim Wiley-VCH 2008 S. 1447 - 2369 Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Physica status solidi : C, Current topics in solid state physics 5,6 Einzelaufnahme eines Zs.-Heftes Halbleiter (DE-588)4022993-2 gnd rswk-swf Nitride (DE-588)4171929-3 gnd rswk-swf (DE-588)1071861417 Konferenzschrift gnd-content Nitride (DE-588)4171929-3 s Halbleiter (DE-588)4022993-2 s DE-604 Palacios, Tomás 1978- Sonstige (DE-588)135630584 oth International Conference on Nitride Semiconductors 7 2007 Las Vegas, Nev. Sonstige (DE-588)6520837-7 oth http://www.gbv.de/dms/ilmenau/toc/567112403.PDF lizenzfrei Inhaltsverzeichnis GBV Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=017709141&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Papers presented at the 7th International Conference of Nitride Semiconductors (ICNS-7) Las Vegas, Nevada, USA, 16 - 21 September 2007 Halbleiter (DE-588)4022993-2 gnd Nitride (DE-588)4171929-3 gnd |
| subject_GND | (DE-588)4022993-2 (DE-588)4171929-3 (DE-588)1071861417 |
| title | Papers presented at the 7th International Conference of Nitride Semiconductors (ICNS-7) Las Vegas, Nevada, USA, 16 - 21 September 2007 |
| title_auth | Papers presented at the 7th International Conference of Nitride Semiconductors (ICNS-7) Las Vegas, Nevada, USA, 16 - 21 September 2007 |
| title_exact_search | Papers presented at the 7th International Conference of Nitride Semiconductors (ICNS-7) Las Vegas, Nevada, USA, 16 - 21 September 2007 |
| title_full | Papers presented at the 7th International Conference of Nitride Semiconductors (ICNS-7) Las Vegas, Nevada, USA, 16 - 21 September 2007 guest ed.: Tomas Palacios ... |
| title_fullStr | Papers presented at the 7th International Conference of Nitride Semiconductors (ICNS-7) Las Vegas, Nevada, USA, 16 - 21 September 2007 guest ed.: Tomas Palacios ... |
| title_full_unstemmed | Papers presented at the 7th International Conference of Nitride Semiconductors (ICNS-7) Las Vegas, Nevada, USA, 16 - 21 September 2007 guest ed.: Tomas Palacios ... |
| title_short | Papers presented at the 7th International Conference of Nitride Semiconductors (ICNS-7) |
| title_sort | papers presented at the 7th international conference of nitride semiconductors icns 7 las vegas nevada usa 16 21 september 2007 |
| title_sub | Las Vegas, Nevada, USA, 16 - 21 September 2007 |
| topic | Halbleiter (DE-588)4022993-2 gnd Nitride (DE-588)4171929-3 gnd |
| topic_facet | Halbleiter Nitride Konferenzschrift |
| url | http://www.gbv.de/dms/ilmenau/toc/567112403.PDF http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=017709141&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
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