Fundamentals of semiconductors: physics and materials properties
Gespeichert in:
| Hauptverfasser: | , |
|---|---|
| Format: | Buch |
| Sprache: | English |
| Veröffentlicht: |
Heidelberg [u.a.]
Springer
2010
|
| Ausgabe: | 4. ed. |
| Schriftenreihe: | Graduate texts in physics
|
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | Hier auch später erschienene, unveränderte Nachdrucke |
| Beschreibung: | XX, 775 S. Ill., graph. Darst. |
| ISBN: | 9783642007095 9783642007101 9783662517369 |
Internformat
MARC
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|---|---|---|---|
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| 020 | |a 9783642007095 |c GB. : EUR 74.15 (freier Pr.), sfr 109.00 (freier Pr.) |9 978-3-642-00709-5 | ||
| 020 | |a 9783642007101 |c eISBN |9 978-3-642-00710-1 | ||
| 020 | |a 9783662517369 |9 978-3-662-51736-9 | ||
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| 100 | 1 | |a Yu, Peter Y. |d 1944- |e Verfasser |0 (DE-588)137062419 |4 aut | |
| 245 | 1 | 0 | |a Fundamentals of semiconductors |b physics and materials properties |c Peter Y. Yu ; Manuel Cardona |
| 250 | |a 4. ed. | ||
| 264 | 1 | |a Heidelberg [u.a.] |b Springer |c 2010 | |
| 300 | |a XX, 775 S. |b Ill., graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 490 | 0 | |a Graduate texts in physics | |
| 500 | |a Hier auch später erschienene, unveränderte Nachdrucke | ||
| 650 | 4 | |a Semiconductors | |
| 650 | 0 | 7 | |a Halbleiterphysik |0 (DE-588)4113829-6 |2 gnd |9 rswk-swf |
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| 700 | 1 | |a Cardona, Manuel |d 1934-2014 |e Verfasser |0 (DE-588)119321777 |4 aut | |
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Datensatz im Suchindex
| _version_ | 1804139327255478272 |
|---|---|
| adam_text | Contents
1.
Introduction
■■■■■■■■■■■■■■■■■ШИИИИИИИИИИИ
1
1.1
A Survey of Semiconductors
............................... 2
1.1.1
Elemental Semiconductors
.......................... 2
1.1.2
Binary Compounds
................................ 2
1.1.3
Oxides
.......................................... 3
1.1.4
Layered Semiconductors
........................... 3
1.1.5
Organic Semiconductors
............................ 4
1.1.6
Magnetic Semiconductors
........................... 4
1.1.7
Other Miscellaneous Semiconductors
................. 4
1.2
Growth Techniques
....................................... 5
1.2.1
Czochralski Method
............................... 5
1.2.2
Bridgman Method
................................. 6
1.2.3
Chemical Vapor Deposition
......................... 7
1.2.4
Molecular Beam Epitaxy
........................... 8
1.2.5
Fabrication of Self-Organized Quantum Dots
by the Stranski-Krastanow Growth Method
........... 11
1.2.6
Liquid Phase Epitaxy
............................. 13
Summary
................................................... 14
Periodic Table of Semiconductor-Forming Elements
.............. 15
2.
Electronic Band Structures
ІШ^ШШвШЯЯвШШШЯШЯШвШЯШв^ШШЯШ
17
2.1
Quantum Mechanics
..................................... 18
2.2
Translational Symmetry and Brillouin Zones
................. 20
2.3
A Pedestrian s Guide to Group Theory
..................... 25
2.3.1
Definitions and Notations
.......................... 25
2.3.2
Symmetry Operations of the Diamond
and Zinc-Blende Structures
........................ 30
2.3.3
Representations and Character Tables
............... 32
2.3.4
Some Applications of Character Tables
............... 40
2.4
Empty Lattice or Nearly Free Electron Energy Bands
......... 48
2.4.1
Nearly Free Electron Band Structure
in a Zinc-Blende Crystal
........................... 48
2.4.2
Nearly Free Electron Energy Bands in Diamond Crystals
52
2.5
Band Structure Calculations by Pseudopotential Methods
...... 58
2.5.1
Pseudopotential Form Factors
in Zinc-Blende- and Diamond-Type Semiconductors
.... 61
2.5.2
Empirical and Self-Consistent Pseudopotential Methods
66
XVI Contents
2.6
The k-p Method of Band-Structure Calculations
.............. 68
2.6.1
Effective Mass of
a Nondegenerate
Band
Using the k-p Method
............................. 69
2.6.2
Band Dispersion near a Degenerate
Extrémům:
Top Valence Bands in
Diamond-
and
Zinc-Blende-Type Semiconductors
............... 71
2.7
Tight-Binding or LCAO Approach to the Band Structure
of Semiconductors
...................................... 83
2.7.1
Molecular
Orbitals
and Overlap Parameters
........... 83
2.7.2
Band Structure of Group-IV Elements
by the Tight-Binding Method
....................... 87
2.7.3
Overlap Parameters and Nearest-Neighbor Distances
... 94
Problems
................................................... 96
Summary
.................................................. 105
Vibrational Properties of Semiconductors,
and Electron-Phonon Interactions
ШШЕЕШШШЕ/ЕНЕ/ЕШШЕЕЕШЕЕШИШШЛ
107
3.1
Phonon Dispersion Curves of Semiconductors
............... 110
3.2
Models for Calculating Phonon Dispersion Curves
of Semiconductors
..................................... 114
3.2.1
Force Constant Models
........................... 114
3.2.2
Shell Model
.................................... 114
3.2.3
Bond Models
................................... 115
3.2.4
Bond Charge Models
............................ 117
3.3
Electron-Phonon Interactions
............................ 121
3.3.1
Strain Tensor and Deformation Potentials
............ 122
3.3.2
Electron-Acoustic-Phonon Interaction
at Degenerate Bands
............................. 127
3.3.3
Piezoelectric Electron-Acoustic-Phonon Interaction
.... 130
3.3.4
Electron-Optical-Phonon
Deformation Potential Interactions
................. 131
3.3.5 Fröhlich
Interaction
............................. 133
3.3.6
Interaction Between Electrons and Large-
Wavevector
Phonons: Intervalley Electron-Phonon Interaction
.... 135
Problems
................................................... 137
Summary
...................................................158
Electronic Properties of Defects
ШШИШШЕШШШШШШЕЕШЕШЕШШЕШЕШ
159
4.1
Classification of Defects
................................. 160
4.2
Shallow or Hydrogenic Impurities
......................... 161
4.2.1
Effective Mass Approximation
..................... 162
4.2.2
Hydrogenic or Shallow Donors
.................... 166
4.2.3
Donors Associated with
Anisotropie
Conduction Bands
171
4.2.4
Acceptor Levels in Diamond-
and Zinc-Blende-Type Semiconductors
.............. 174
4.3
Deep Centers
......................................... 180
Contents XVII
4.3.1
Green s Function Method
for Calculating Defect Energy Levels
............... 183
4.3.2
An Application of the Green s Function Method:
Linear Combination of Atomic
Orbitals............. 188
4.3.3
Another Application of the Green s Function Method:
Nitrogen in GaP and GaAsP Alloys
................ 192
4.3.4
Final Note on Deep Centers
....................... 197
Problems
.................................................. 198
Summary
.................................................. 202
5.
Electrical Transport
ШЕЕЕШЕШШШЕШШ^ШШШШШШІ^ШЯШШЕ
203
5.1
Quasi-Classical Approach
............................... 203
5.2
Carrier Mobility for
a Nondegenerate
Electron Gas
.......... 206
5.2.1
Relaxation Time Approximation
................... 206
5.2.2
Nondegenerate
Electron Gas in a Parabolic Band
..... 207
5.2.3
Dependence of Scattering and Relaxation Times
on Electron Energy
.............................. 208
5.2.4
Momentum Relaxation Times
..................... 209
5.2.5
Temperature Dependence of Mobilities
............. 220
5.3
Modulation Doping
.................................... 223
5.4
High-Field Transport and Hot Carrier Effects
............... 225
5.4.1
Velocity Saturation
.............................. 227
5.4.2
Negative Differential Resistance
................... 228
5.4.3
Gunn Effect
.................................... 230
5.5
Magneto-Transport and the Hall Effect
.................... 232
5.5.1
Magneto-Conductivity Tensor
..................... 232
5.5.2
Hall Effect
..................................... 234
5.5.3
Hall Coefficient for Thin Film Samples
(van
der Pauw
Method)
.......................... 235
5.5.4
Hall Effect for a Distribution of Electron Energies
___ 236
Problems
.................................................. 237
Summary
.................................................. 241
6.
Optical Properties
І ^^^^ШЙЕШШШ^^ШШШШШЕШ^ШШШ
243
6.1
Macroscopic Electrodynamics
............................ 244
6.1.1
Digression: Units for the Frequency
of Electromagnetic Waves
........................ 247
6.1.2
Experimental Determination of Optical Functions
.... 247
6.1.3
Kramers-Kronig Relations
........................ 250
6.2
The Dielectric Function
................................. 253
6.2.1
Experimental Results
............................ 253
6.2.2
Microscopic Theory of the Dielectric Function
......., 254
6.2.3
Joint Density of States and Van Hove Singularities
.... 261
6.2.4
Van Hove Singularities in
e¡
....................... 262
6.2.5
Direct Absorption Edges
......................... 268
6.2.6
Indirect Absorption Edges
........................ 269
XVIII
Contents
6.2.7
Forbidden Direct Absorption Edges
.............. 273
6.3
Excitons
.............................................. 276
6.3.1
Exciton Effect at Mo Critical Points
................. 279
6.3.2
Absorption Spectra of
Excitons
.................... 282
6.3.3
Exciton Effect at M1 Critical Points
or Hyperbolic
Excitons
........................... 288
6.3.4
Exciton Effect at M3 Critical Points
................. 291
6.4
Phonon-Polaritons and Lattice Absorption
.................. 292
6.4.1
Phonon-Polaritons
............................... 295
6.4.2
Lattice Absorption and Reflection
.................. 298
6.4.3
Multiphonon Lattice Absorption
................... 299
6.4.4
Dynamic Effective Ionic Charges
in
Heteropolar
Semiconductors
.................... 303
6.5
Absorption Associated with Extrinsic Electrons
............. 305
6.5.1
Free-Carrier Absorption in Doped Semiconductors
.... 306
6.5.2
Absorption by Carriers Bound
to Shallow Donors and Acceptors
.................. 311
6.6
Modulation Spectroscopy
................................ 315
6.6.1
Frequency Modulated Reflectance
and Thermoreflectance
........................... 319
6.6.2
Piezoreflectance
................................ 321
6.6.3
Electroreflectance (Franz-Keldysh Effect)
........... 322
6.6.4
Photoreflectance
................................ 329
6.6.5
Reflectance Difference Spectroscopy
............... 332
6.7
Addendum (Third Edition): Dielectric Function
............. 333
Problems
.................................................. 334
Summary
.................................................. 343
7.
Optical Properties
Π
ШШШЕШШШШЕШЕеШЯееШеШЕШЕЕ^Ш^^Ш
345
7.1
Emission Spectroscopies
................................. 345
7.1.1
Band-to-Band Transitions
......................... 351
7.1.2
Free-to-Bound Transitions
........................ 354
7.1.3
Donor-Acceptor Pair Transitions
.................. 356
7.1.4
Excitons
and Bound
Excitons
..................... 362
7.1.5
Luminescence Excitation Spectroscopy
.............. 369
7.2
Light Scattering Spectroscopies
........................... 375
7.2.1
Macroscopic Theory
of Inelastic Light Scattering by Phonons
............. 375
7.2.2
Raman Tensor and Selection Rules
................. 378
7.2.3
Experimental Determination of Raman Spectra
...... 385
7.2.4
Microscopic Theory of Raman Scattering
............ 394
7.2.5
A Detour into the World of Feynman Diagrams
...... 395
7.2.6
Brillouin Scattering
.............................. 398
7.2.7
Experimental Determination of Brillouin Spectra
..... 400
7.2.8
Resonant Raman and Brillouin Scattering
........... 401
Problems
.................................................. 422
Summary
.................................................. 426
Contents XIX
8. Photoelectron Spectroscopy
^ШЕШШЕІШШШЕІ^^ШЕШШ^ШШЯШЯі
427
8.1 Photoemission......................................... 431
8.1.1
Angle-Integrated
Photoelectron
Spectra
of the Valence Bands
............................. 440
8.1.2
Angle-Resolved Photoelectron Spectra
of the Valence Bands
............................. 443
8.1.3
Core Levels
.................................... 451
8.2
Inverse
Photoemission.................................. 456
8.3
Surface Effects
........................................ 457
8.3.1
Surface States and Surface Reconstruction
........... 457
8.3.2
Surface Energy Bands
............................ 458
8.3.3
Fermi Level Pinning and Space Charge Layers
....... 460
Problems
.................................................. 465
Summary
.................................................. 468
9.
Effect of Quantum Confinement on Electrons
and Phonons in Semiconductors
■¡■■■■^■■■^■И^ШИИИ^И
469
9.1
Quantum Confinement and Density of States
............... 470
9.2
Quantum Confinement of Electrons and Holes
.............. 473
9.2.1
Semiconductor Materials
for Quantum Wells and Superlattices
............... 474
9.2.2
Classification of Multiple Quantum Wells
and Superlattices
................................ 478
9.2.3
Confinement of Energy Levels of Electrons and Holes
. 479
9.2.4
Some Experimental Results
....................... 489
9.3
Phonons in Superlattices
................................ 494
9.3.1
Phonons in Superlattices:
Folded Acoustic and Confined Optic Modes
.......... 494
9.3.2
Folded Acoustic Modes: Macroscopic Treatment
...... 499
9.3.3
Confined Optical Modes: Macroscopic Treatment
..... 500
9.3.4
Electrostatic Effects
in Polar Crystals: Interface Modes
.................. 502
9.4
Raman Spectra of Phonons in Semiconductor Superlattices
.... 511
9.4.1
Raman Scattering by Folded Acoustic Phonons
....... 511
9.4.2
Raman Scattering by Confined Optical Phonons
...... 516
9.4.3
Raman Scattering by Interface Modes
.............. 518
9.4.4
Macroscopic Models of Electron-LO Phonon
(Fröhlich)
Interaction in Multiple Quantum Wells
..... 521
9.5
Electrical Transport: Resonant Tunneling
................... 525
9.5.1
Resonant Tunneling
Through a Double-Barrier Quantum Well
........... 526
9.5.2
I-V Characteristics of Resonant Tunneling Devices
___ 529
9.6
Quantum Hall Effects in Two-Dimensional Electron Gases
.... 533
9.6.1
Landau Theory of Diamagnetism
in a Three-Dimensional Free Electron Gas
........... 534
9.6.2
Magneto-Conductivity
of a Two-Dimensional Electron Gas: Filling Factor
----- 537
XX
Contents
9.6.3 The Experiment
of
von Klitzing,
Pepper and Dorda
... 538
9.6.4
Explanation of the Hall Plateaus
in the Integral Quantum Hall Effect
................ 541
9.7
Concluding Remarks
................................... 545
Problems
.................................................. 546
Summary
.................................................. 551
Appendix A: Pioneers of Semiconductor Physics Remember... i^^^^H
553
Ultra-Pure Germanium: From Applied to Basic Research
or an Old Semiconductor Offering New Opportunities
By Eugene E.
Haller
.................................. 555
Two Pseudopotential Methods: Empirical and
Ab Initio
By Marvin L. Cohen
.................................. 558
The Early Stages of Band-Structures Physics
and Its Struggles for a Place in the Sun
By Conyers Herring
.................................. 560
Cyclotron Resonance and Structure of Conduction
and Valence Band Edges in Silicon and Germanium
By Charles
Kittel..................................... 563
Optical Properties of Amorphous Semiconductors
and Solar Cells
By
Jan Taue......................................... 566
Optical Spectroscopy of Shallow Impurity Centers
By
Elias Burstein .................................... 569
On the Prehistory of Angular Resolved
Photoemission
By Neville V. Smith
................................... 574
The Discovery and Very Basics of the Quantum Hall Effect
By Klaus
von Klitzing ................................ 576
The Birth of the Semiconductor
Superlattice
By Leo Esaki
....................................... 578
Appendix B: Solutions to Some of the Problems
Ш^Ш^^ШЕ^ШЕЕШЕ^Ш
583
Appendix C: Recent Development
^^^^^^^^^Ш^^ШЕ^ШІ^^ШШ
673
Appendix D: Recent Developments and References IHHH^^HHM
687
References
ШІШШШЕЕІЕ^^Ш^^Ш^ШШШ^^ШЕШЕ^^^^^ШІ^ШЕШШ^ШШ
719
Subject Index
ШЕШЕЕ^^^ШШЕШШШШЙ^ШЕЕ^^^^ШШ^ШЕ^ШШ
755
Physical Parameters of Tetrahedral Semiconductors (Inside Front Cover)
Table of Fundamental Physical Constants (Inside Back Cover)
Table of Units (Inside Back Cover)
|
| any_adam_object | 1 |
| author | Yu, Peter Y. 1944- Cardona, Manuel 1934-2014 |
| author_GND | (DE-588)137062419 (DE-588)119321777 |
| author_facet | Yu, Peter Y. 1944- Cardona, Manuel 1934-2014 |
| author_role | aut aut |
| author_sort | Yu, Peter Y. 1944- |
| author_variant | p y y py pyy m c mc |
| building | Verbundindex |
| bvnumber | BV035644542 |
| classification_rvk | UP 2800 |
| classification_tum | PHY 685f |
| ctrlnum | (OCoLC)390878032 (DE-599)DNB993291147 |
| dewey-full | 537.622 |
| dewey-hundreds | 500 - Natural sciences and mathematics |
| dewey-ones | 537 - Electricity and electronics |
| dewey-raw | 537.622 |
| dewey-search | 537.622 |
| dewey-sort | 3537.622 |
| dewey-tens | 530 - Physics |
| discipline | Maschinenbau / Maschinenwesen Physik |
| edition | 4. ed. |
| format | Book |
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| genre | (DE-588)4123623-3 Lehrbuch gnd-content |
| genre_facet | Lehrbuch |
| id | DE-604.BV035644542 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T21:42:19Z |
| institution | BVB |
| isbn | 9783642007095 9783642007101 9783662517369 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-017699273 |
| oclc_num | 390878032 |
| open_access_boolean | |
| owner | DE-20 DE-703 DE-83 DE-355 DE-BY-UBR DE-11 DE-1050 DE-92 DE-634 DE-19 DE-BY-UBM DE-91G DE-BY-TUM DE-29T |
| owner_facet | DE-20 DE-703 DE-83 DE-355 DE-BY-UBR DE-11 DE-1050 DE-92 DE-634 DE-19 DE-BY-UBM DE-91G DE-BY-TUM DE-29T |
| physical | XX, 775 S. Ill., graph. Darst. |
| publishDate | 2010 |
| publishDateSearch | 2010 |
| publishDateSort | 2010 |
| publisher | Springer |
| record_format | marc |
| series2 | Graduate texts in physics |
| spelling | Yu, Peter Y. 1944- Verfasser (DE-588)137062419 aut Fundamentals of semiconductors physics and materials properties Peter Y. Yu ; Manuel Cardona 4. ed. Heidelberg [u.a.] Springer 2010 XX, 775 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Graduate texts in physics Hier auch später erschienene, unveränderte Nachdrucke Semiconductors Halbleiterphysik (DE-588)4113829-6 gnd rswk-swf Halbleiter (DE-588)4022993-2 gnd rswk-swf Stoffeigenschaft (DE-588)4192147-1 gnd rswk-swf (DE-588)4123623-3 Lehrbuch gnd-content Halbleiterphysik (DE-588)4113829-6 s DE-604 Halbleiter (DE-588)4022993-2 s 1\p DE-604 Stoffeigenschaft (DE-588)4192147-1 s 2\p DE-604 Cardona, Manuel 1934-2014 Verfasser (DE-588)119321777 aut Erscheint auch als Online-Ausgabe 978-3-642-00710-1 Digitalisierung UB Regensburg application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=017699273&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk 2\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
| spellingShingle | Yu, Peter Y. 1944- Cardona, Manuel 1934-2014 Fundamentals of semiconductors physics and materials properties Semiconductors Halbleiterphysik (DE-588)4113829-6 gnd Halbleiter (DE-588)4022993-2 gnd Stoffeigenschaft (DE-588)4192147-1 gnd |
| subject_GND | (DE-588)4113829-6 (DE-588)4022993-2 (DE-588)4192147-1 (DE-588)4123623-3 |
| title | Fundamentals of semiconductors physics and materials properties |
| title_auth | Fundamentals of semiconductors physics and materials properties |
| title_exact_search | Fundamentals of semiconductors physics and materials properties |
| title_full | Fundamentals of semiconductors physics and materials properties Peter Y. Yu ; Manuel Cardona |
| title_fullStr | Fundamentals of semiconductors physics and materials properties Peter Y. Yu ; Manuel Cardona |
| title_full_unstemmed | Fundamentals of semiconductors physics and materials properties Peter Y. Yu ; Manuel Cardona |
| title_short | Fundamentals of semiconductors |
| title_sort | fundamentals of semiconductors physics and materials properties |
| title_sub | physics and materials properties |
| topic | Semiconductors Halbleiterphysik (DE-588)4113829-6 gnd Halbleiter (DE-588)4022993-2 gnd Stoffeigenschaft (DE-588)4192147-1 gnd |
| topic_facet | Semiconductors Halbleiterphysik Halbleiter Stoffeigenschaft Lehrbuch |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=017699273&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| work_keys_str_mv | AT yupetery fundamentalsofsemiconductorsphysicsandmaterialsproperties AT cardonamanuel fundamentalsofsemiconductorsphysicsandmaterialsproperties |