Device applications of silicon nanocrystals and nanostructures:
Gespeichert in:
| Weitere Verfasser: | |
|---|---|
| Format: | Buch |
| Sprache: | English |
| Veröffentlicht: |
New York
Springer
2009
|
| Schriftenreihe: | Nanostructure Science and Technology
|
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis Klappentext |
| Beschreibung: | XII, 344 S. Ill., graph. Darst. |
| ISBN: | 9780387786889 9780387786896 |
Internformat
MARC
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| 264 | 1 | |a New York |b Springer |c 2009 | |
| 300 | |a XII, 344 S. |b Ill., graph. Darst. | ||
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| 490 | 0 | |a Nanostructure Science and Technology | |
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Datensatz im Suchindex
| _version_ | 1804139320250990592 |
|---|---|
| adam_text | Contents
1
Si-Rich Dielectrics for Active Photonic Devices
...................................... 1
L.
C. Kimerling,
L.
Dal Negro,
M. Stolfi, J. H. Yi, J.
Michel,
X.
Duan, E.
H.
Sargent,
T.
-W.
F.
Chang, V Sukhovatkin,
J. Haavisto, and J. LeBlanc
2
Nanocrystalline Si EL Devices
.................................................................. 25
B. Gelloz and
N.
Koshida
3
Surface and
Superlattice............................................................................ 71
Rabah Boukherroub
4
Optical Gain and Lasing in Low Dimensional Silicon:
The Quest for an Injection Laser
............................................................... 103
Lorenzo
Pavesi
5
Silicon Single-Electron Devices
................................................................ 125
Yasuo Takahashi, Yukinori
Ono, Akira
Fujiwara,
Katsuhiko Nishiguchi, and Hiroshi Inokawa
6
Room Temperature Silicon Spin-Based Transistors
.................................. 173
M. Cahay and S. Bandyopadhyay
7
Electron Transport in Nanocrystalline Silicon
.......................................... 197
H. Mizuta, S.
Uno,
N.
Morì, S. Oda,
and
N.
Koshida
8
Silicon Nanocrystal Nonvolatile Memories
............................................... 223
R. Muralidhar, M.A. Sadd, and BE. White Jr.
xii CONTENTS
9 Nanocrystalline Silicon
Ballistic
Electron Emitter.................................. 251
Takuya
Komoda
and
N. Koshida
10
Porous Silicon Optical Label-Free Biosensors
........................................ 293
Philippe M.
Fauchet
11
Ultrasonic Emission from Nanocrystalline Porous Silicon
..................... 325
Hiroyuki Shinoda and Nobuyoshi Koshida
Index
................................................................................................................ 337
Device Applications
of Silicon
Nanocry
stals
and
N
ano
structure
s
Edited by
Nobuyoshi
Koshida
Recent developments in the technology of silicon nanocrystals and silicon nanostruc-
tures. where quantum-size effects are important, are systematically described including
examples of device applications. Due to the strong quantum confinement effect, the
material properties are freed from the usual indirect- or direct-bandgap regime, and the
optical, electrical, thermal, and chemical properties of these nanocrystalline and nanos-
tructured semiconductors are drastically changed from those of bulk silicon. In addition
to efficient visible luminescence, various other useful material functions are induced in
nanocrystalline silicon and periodic silicon nanostructures. Some novel devices and
applications, in fields such as photonics (electroluminescence diode, microcavity. and
waveguide), electronics (single-electron device, spin transistor, nonvolatile memory, and
ballistic electron emitter), acoustics, and biology, have been developed by the use of
these quantum-induced functions in ways different from the conventional scaling princi¬
ple for ULSI.
Key Features:
•
Offers the first comprehensive treatment of recent advances in quantum-sized silicon
device technology
•
Presents systematic and vivid descriptions from a technological view point, providing
a realistic perspective on forthcoming silicon device concepts in the post-scaling era
1
Shows how silicon nanocrwal technology is fundamental to the future of silicon elec¬
tronics, optoelectronics, and photonics
•
Reviews optimal strategies for developing the next generation of devices for micro¬
electronics, photonics, acoustics, and biology
|
| any_adam_object | 1 |
| author2 | Koshida, Nobuyoshi |
| author2_role | edt |
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| building | Verbundindex |
| bvnumber | BV035639917 |
| callnumber-first | T - Technology |
| callnumber-label | TK7871 |
| callnumber-raw | TK7871.15.S55 |
| callnumber-search | TK7871.15.S55 |
| callnumber-sort | TK 47871.15 S55 |
| callnumber-subject | TK - Electrical and Nuclear Engineering |
| classification_rvk | UP 3100 VE 9850 |
| ctrlnum | (OCoLC)297338604 (DE-599)DNB992154693 |
| dewey-full | 546.68322 |
| dewey-hundreds | 500 - Natural sciences and mathematics |
| dewey-ones | 546 - Inorganic chemistry |
| dewey-raw | 546.683 22 |
| dewey-search | 546.683 22 |
| dewey-sort | 3546.683 222 |
| dewey-tens | 540 - Chemistry and allied sciences |
| discipline | Chemie / Pharmazie Physik Allgemeine Naturwissenschaft |
| format | Book |
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| id | DE-604.BV035639917 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T21:42:12Z |
| institution | BVB |
| isbn | 9780387786889 9780387786896 |
| language | English |
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| oclc_num | 297338604 |
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| owner | DE-703 DE-11 |
| owner_facet | DE-703 DE-11 |
| physical | XII, 344 S. Ill., graph. Darst. |
| publishDate | 2009 |
| publishDateSearch | 2009 |
| publishDateSort | 2009 |
| publisher | Springer |
| record_format | marc |
| series2 | Nanostructure Science and Technology |
| spelling | Device applications of silicon nanocrystals and nanostructures Nobuyoshi Koshida Editor New York Springer 2009 XII, 344 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Nanostructure Science and Technology Nanostructured materials Silicon Electric properties Silicium (DE-588)4077445-4 gnd rswk-swf Nanostrukturiertes Material (DE-588)4342626-8 gnd rswk-swf Silicium (DE-588)4077445-4 s Nanostrukturiertes Material (DE-588)4342626-8 s DE-604 Koshida, Nobuyoshi edt Digitalisierung UB Bayreuth application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=017694725&sequence=000003&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis Digitalisierung UB Bayreuth application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=017694725&sequence=000004&line_number=0002&func_code=DB_RECORDS&service_type=MEDIA Klappentext |
| spellingShingle | Device applications of silicon nanocrystals and nanostructures Nanostructured materials Silicon Electric properties Silicium (DE-588)4077445-4 gnd Nanostrukturiertes Material (DE-588)4342626-8 gnd |
| subject_GND | (DE-588)4077445-4 (DE-588)4342626-8 |
| title | Device applications of silicon nanocrystals and nanostructures |
| title_auth | Device applications of silicon nanocrystals and nanostructures |
| title_exact_search | Device applications of silicon nanocrystals and nanostructures |
| title_full | Device applications of silicon nanocrystals and nanostructures Nobuyoshi Koshida Editor |
| title_fullStr | Device applications of silicon nanocrystals and nanostructures Nobuyoshi Koshida Editor |
| title_full_unstemmed | Device applications of silicon nanocrystals and nanostructures Nobuyoshi Koshida Editor |
| title_short | Device applications of silicon nanocrystals and nanostructures |
| title_sort | device applications of silicon nanocrystals and nanostructures |
| topic | Nanostructured materials Silicon Electric properties Silicium (DE-588)4077445-4 gnd Nanostrukturiertes Material (DE-588)4342626-8 gnd |
| topic_facet | Nanostructured materials Silicon Electric properties Silicium Nanostrukturiertes Material |
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