Holdings: Fundamentals of RF and microwave transistor amplifiers

Fundamentals of RF and microwave transistor amplifiers:

Saved in:

Bibliographic Details
Main Author:	Bahl, Inder J. (Author)
Format:	Book
Language:	English
Published:	Hoboken, N.J. Wiley 2009
Subjects:	Amplifiers, Radio frequency Microwave amplifiers Transistor amplifiers Mikrowellenverstärker Schaltverstärker Hochfrequenzverstärker Schaltungsentwurf Leistungsverstärker
Online Access:	Inhaltsverzeichnis
Physical Description:	XXIII, 671 S. Ill., graph. Darst.
ISBN:	9780470391662

Staff View

MARC


LEADER	00000nam a2200000zc 4500
001	BV035604645
003	DE-604
005	20110518
007	t
008	090707s2009 xxuad\|\| \|\|\|\| 00\|\|\| eng d
010			\|a 2008049895
020			\|a 9780470391662 \|c cloth \|9 978-0-470-39166-2
035			\|a (OCoLC)244768433
035			\|a (DE-599)BVBBV035604645
040			\|a DE-604 \|b ger \|e aacr
041	0		\|a eng
044			\|a xxu \|c US
049			\|a DE-634 \|a DE-859 \|a DE-29T
050		0	\|a TK6565.A55
082	0		\|a 621.3815/35
084			\|a ZN 5470 \|0 (DE-625)157462: \|2 rvk
100	1		\|a Bahl, Inder J. \|e Verfasser \|4 aut
245	1	0	\|a Fundamentals of RF and microwave transistor amplifiers \|c Inder Bahl
264		1	\|a Hoboken, N.J. \|b Wiley \|c 2009
300			\|a XXIII, 671 S. \|b Ill., graph. Darst.
336			\|b txt \|2 rdacontent
337			\|b n \|2 rdamedia
338			\|b nc \|2 rdacarrier
650		4	\|a Amplifiers, Radio frequency
650		4	\|a Microwave amplifiers
650		4	\|a Transistor amplifiers
650	0	7	\|a Mikrowellenverstärker \|0 (DE-588)4169901-4 \|2 gnd \|9 rswk-swf
650	0	7	\|a Schaltverstärker \|0 (DE-588)4179393-6 \|2 gnd \|9 rswk-swf
650	0	7	\|a Hochfrequenzverstärker \|0 (DE-588)4160154-3 \|2 gnd \|9 rswk-swf
650	0	7	\|a Schaltungsentwurf \|0 (DE-588)4179389-4 \|2 gnd \|9 rswk-swf
650	0	7	\|a Leistungsverstärker \|0 (DE-588)4129735-0 \|2 gnd \|9 rswk-swf
689	0	0	\|a Leistungsverstärker \|0 (DE-588)4129735-0 \|D s
689	0	1	\|a Mikrowellenverstärker \|0 (DE-588)4169901-4 \|D s
689	0	2	\|a Hochfrequenzverstärker \|0 (DE-588)4160154-3 \|D s
689	0	3	\|a Schaltverstärker \|0 (DE-588)4179393-6 \|D s
689	0	4	\|a Schaltungsentwurf \|0 (DE-588)4179389-4 \|D s
689	0		\|5 DE-604
856	4	2	\|m GBV Datenaustausch \|q application/pdf \|u http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=017659898&sequence=000003&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA \|3 Inhaltsverzeichnis
999			\|a oai:aleph.bib-bvb.de:BVB01-017659898

Record in the Search Index

_version_	1804139273227599872
adam_text	FUNDAMENTALS OF RF AND MICROWAVE TRANSISTOR AMPLIFIERS INDER J. BAHL WILEY A JOHN WILEY & SONS, INC., PUBLICATION CONTENTS FOREWORD XVII PREFACE XIX 1. INTRODUCTION 1 1.1. TRANSISTOR AMPLIFIER 1 1.2. EARLY HISTORY OF TRANSISTOR AMPLIFIERS 3 1.3. BENEFITS OF TRANSISTOR AMPLIFIERS 3 1.4. TRANSISTORS 4 1.5. DESIGN OF AMPLIFIERS 5 1.6. AMPLIFIER MANUFACTURING TECHNOLOGIES 7 1.7. APPLICATIONS OF AMPLIFIERS 7 1.8. AMPLIFIER COST 12 1.9. CURRENT TRENDS 12 1.10. BOOK ORGANIZATION 13 REFERENCES 14 2. LINEAR NETWORK ANALYSIS 17 2.1. IMPEDANCE MATRIX 18 2.2. ADMITTANCE MATRIX 20 2.3. ABCD PARAMETERS 21 2.4. S-PARAMETERS 23 2.4.1. S-PARAMETERS FOR A ONE-PORT NETWORK 29 2.5. RELATIONSHIPS BETWEEN VARIOUS TWO-PORT PARAMETERS 29 REFERENCES 31 PROBLEMS 31 3. AMPLIFIER CHARACTERISTICS AND DEFINITIONS 33 3.1. BANDWIDTH 33 3.2. POWER GAIN 34 3.3. INPUT AND OUTPUT VSWR 38 3.4. OUTPUT POWER 38 3.5. POWER ADDED EFFICIENCY 39 3.6. INTERMODULATION DISTORTION 40 3.6.1. IP3 40 3.6.2. ACPR 41 3.6.3. EVM 41 3.7. HARMONIC POWER 43 VIII CONTENTS 3.8. PEAK-TO-AVERAGE RATIO 43 3.9. COMBINER EFFICIENCY 44 3.10. NOISE CHARACTERIZATION 46 3.10.1. NOISE FIGURE 47 3.10.2. NOISE TEMPERATURE 47 3.10.3. NOISE BANDWIDTH 48 3.10.4. OPTIMUM NOISE MATCH 48 3.10.5. CONSTANT NOISE FIGURE AND GAIN CIRCLES 3.10.6. SIMULTANEOUS INPUT AND NOISE MATCH 3.11. DYNAMIC RANGE 51 3.12. MULTISTAGE AMPLIFIER CHARACTERISTICS 53 3.12.1. MULTISTAGE IP3 53 3.12.2. MULTISTAGE * 54 3.12.3. MULTISTAGE NF 54 3.13. GATE AND DRAIN PUSHING FACTORS 56 3.14. AMPLIFIER TEMPERATURE COEFFICIENT 57 3.15. MEAN TIME TO FAILURE 58 REFERENCES 59 PROBLEMS 59 4. TRANSISTORS 4.1. TRANSISTOR TYPES 61 4.2. SILICON BIPOLAR TRANSISTOR 63 4.2.1. FIGURE OF MERIT 65 4.2.2. HIGH-FREQUENCY NOISE PERFORMANCE OF SILICON BJT 66 4.2.3. POWER PERFORMANCE 67 4.3. GAAS MESFET 68 4.3.1. SMALL-SIGNAL EQUIVALENT CIRCUIT 71 4.3.2. FIGURE OF MERIT 72 4.3.3. HIGH-FREQUENCY NOISE PROPERTIES OF MESFETS 75 4.4. HETEROJUNCTION FIELD EFFECT TRANSISTOR 77 4.4.1. HIGH-FREQUENCY NOISE PROPERTIES OF HEMTS 78 4.4.2. INDIUM PHOSPHIDE PHEMTS 79 4.5. HETEROJUNCTION BIPOLAR TRANSISTORS 80 4.5.1. HIGH-FREQUENCY NOISE PROPERTIES OF HBTS 83 4.5.2. SIGE HETEROJUNCTION BIPOLAR TRANSISTORS 85 4.6. MOSFET 86 REFERENCES 88 PROBLEMS 90 5. TRANSISTOR MODELS 91 5.1. TRANSISTOR MODEL TYPES 91 5.1.1. PHYSICS/ELECTROMAGNETIC THEORY BASED MODELS 91 5.1.2. ANALYTICAL OR HYBRID MODELS 92 5.1.3. MEASUREMENT BASED MODELS 92 5.2. MESFET MODELS 99 5.2.1. LINEAR MODELS 99 5.2.2. NONLINEAR MODELS 102 5.3. PHEMT MODELS 105 5.3.1. LINEAR MODELS 105 49 51 61 CONTENTS IX 5.3.2. NONLINEAR MODELS 106 5.4. HBT MODEL 109 5.5. MOSFET MODELS 110 5.6. BJT MODELS 111 5.7. TRANSISTOR MODEL SCALING 112 5.8. SOURCE-PULL AND LOAD-PULL DATA 113 5.8.1. THEORETICAL LOAD-PULL DATA 113 5.8.2. MEASURED POWER AND * SOURCE PULL AND LOAD PULL 116 5.8.3. MEASURED IP3 SOURCE AND LOAD IMPEDANCE 118 5.8.4. SOURCE AND LOAD IMPEDANCE SCALING 118 5.9. TEMPERATURE-DEPENDENT MODELS 120 REFERENCES 121 PROBLEMS 123 6. MATCHING NETWORK COMPONENTS 125 6.1. IMPEDANCE MATCHING ELEMENTS 12 5 6.2. TRANSMISSION LINE MATCHING ELEMENTS 125 6.2.1. MICROSTRIP 126 6.2.2. COPLANAR LINES 134 6.3. LUMPED ELEMENTS 134 6.3.1. CAPACITORS 135 6.3.2. INDUCTORS 136 6.3.3. RESISTORS 139 6.4. BOND WIRE INDUCTORS 141 6.4.1. SINGLE WIRE 141 6.4.2. GROUND PLANE EFFECT 142 6.4.3. MULTIPLE WIRES 143 6.4.4. MAXIMUM CURRENT HANDLING OF WIRE 145 6.5. BROADBAND INDUCTORS 145 REFERENCES 147 PROBLEMS 147 7. IMPEDANCE MATCHING TECHNIQUES 149 7.1. ONE-PORT AND TWO-PORT NETWORKS 149 7.2. NARROWBAND MATCHING TECHNIQUES 150 7.2.1. LUMPED-ELEMENT MATCHING TECHNIQUES 150 7.2.2. TRANSMISSION LINE MATCHING TECHNIQUES 156 7.3. WIDEBAND MATCHING TECHNIQUES 163 7.3.1. GAIN-BANDWIDTH LIMITATIONS 164 7.3.2. LUMPED-ELEMENT WIDEBAND MATCHING TECHNIQUES 169 7.3.3. TRANSMISSION LINE WIDEBAND MATCHING NETWORKS 172 7.3.4. BALUN-TYPE WIDEBAND MATCHING TECHNIQUES 177 7.3.5. BRIDGED-T MATCHING NETWORK 180 REFERENCES 182 PROBLEMS 183 8. AMPLIFIER CLASSES AND ANALYSES 185 8.1. CLASSES OF AMPLIFIERS 18 5 8.2. ANALYSIS OF CLASS-A AMPLIFIERS 188 X CONTENTS 8.3. ANALYSIS OF CLASS-B AMPLIFIERS 190 8.3.1. SINGLE-ENDED CLASS-B AMPLIFIER 191 8.3.2. PUSH-PULL CLASS-B AMPLIFIER 192 8.3.3. OVERDRIVEN CLASS-B AMPLIFIER 194 8.4. ANALYSIS OF CLASS-C AMPLIFIERS 196 8.5. ANALYSIS OF CLASS-E AMPLIFIERS 197 8.6. ANALYSIS OF CLASS-F AMPLIFIERS 201 8.7. COMPARISON OF VARIOUS AMPLIFIER CLASSES 204 REFERENCES 207 PROBLEMS 208 9. AMPLIFIER DESIGN METHODS 9.1. AMPLIFIER DESIGN 211 9.1.1. TRANSISTOR TYPE AND FABRICATION TECHNOLOGY 212 9.1.2. TRANSISTOR SIZE SELECTION 212 9.1.3. DESIGN METHOD 213 9.1.4. CIRCUIT TOPOLOGY 213 9.1.5. CIRCUIT ANALYSIS AND OPTIMIZATION 214 9.1.6. STABILITY AND THERMAL ANALYSES 215 9.2. AMPLIFIER DESIGN TECHNIQUES 215 9.2.1. LOAD-LINE METHOD 216 9.2.2. LOW LOSS MATCH DESIGN TECHNIQUE 218 9.2.3. NONLINEAR DESIGN METHOD 221 9.2.4. TAGUCHI EXPERIMENTAL METHOD 222 9.3. MATCHING NETWORKS 226 9.3.1. REACTIVE/RESISTIVE 226 9.3.2. CLUSTER MATCHING TECHNIQUE 228 9.4. AMPLIFIER DESIGN EXAMPLES 230 9.4.1. LOW-NOISE AMPLIFIER DESIGN 230 9.4.2. MAXIMUM GAIN AMPLIFIER DESIGN 232 9.4.3. POWER AMPLIFIER DESIGN 234 9.4.4. MULTISTAGE DRIVER AMPLIFIER DESIGN 239 9.4.5. GAAS HBT POWER AMPLIFER 244 9.5. SILICON BASED AMPLIFIER DESIGN 248 9.5.1. SILCLNA 248 9.5.2. SI 1* POWER AMPLIFIERS 249 REFERENCES 255 PROBLEMS 257 10. HIGH-EFFICIENCY AMPLIFIER TECHNIQUES 259 10.1. HIGH-EFFICIENCY DESIGN 259 10.1.1. OVERDRIVEN AMPLIFIER DESIGN 261 10.1.2. CLASS-B AMPLIFIER DESIGN 263 10.1.3. CLASS-E AMPLIFIER DESIGN 269 10.1.4. CLASS-F AMPLIFIER DESIGN 274 10.2. HARMONIC REACTION AMPLIFIER 282 10.3. HARMONIC INJECTION TECHNIQUE 282 10.4. HARMONIC CONTROL AMPLIFIER 283 10.5. HIGH-PAE DESIGN CONSIDERATIONS 284 211 CONTENTS XI 10.5.1. HARMONIE TUNING BENCH 284 10.5.2. MATCHING NETWORK LOSS CALCULATION 287 10.5.3. MATCHING NETWORK LOSS REDUCTION 289 REFERENCES 290 PROBLEMS 294 11. BROADBAND AMPLIFIER TECHNIQUES 295 11.1. TRANSISTOR BANDWIDTH LIMITATIONS 29 5 11.1.1. TRANSISTOR GAIN ROLL-OFF 295 11.1.2. VARIABLE DEVICE INPUT AND OUTPUT IMPEDANCE 296 11.1.3. POWER-BANDWIDTH PRODUCT 297 11.2. BROADBAND AMPLIFIER TECHNIQUES 297 11.2.1. REACTIVE/RESISTIVE TOPOLOGY 298 11.2.2. FEEDBACK AMPLIFIERS 303 11.2.3. BALANCED AMPLIFIERS 307 11.2.4. DISTRIBUTED AMPLIFIERS 310 11.2.5. ACTIVE MATCHING BROADBAND TECHNIQUE 320 11.2.6. CASCODE CONFIGURATION 324 11.2.7. COMPARISON OF BROADBAND TECHNIQUES 325 11.3. BROADBAND POWER AMPLIFIER DESIGN CONSIDERATIONS 325 11.3.1. TOPOLOGY SELECTION 326 11.3.2. DEVICE ASPECT RATIO 326 11.3.3. LOW-LOSS MATCHING NETWORKS 327 11.3.4. GAIN FLATNESS TECHNIQUE 327 11.3.5. HARMONIC TERMINATION 327 11.3.6. THERMAL DESIGN 327 REFERENCES 328 PROBLEMS 328 12. LINEARIZATION TECHNIQUES 331 12.1. NONLINEAR ANALYSIS 332 12.1.1. SINGLE-TONE ANALYSIS 332 12.1.2. TWO-TONE ANALYSIS 334 12.2. PHASE DISTORTION 337 12.3. LINEARIZATION OF POWER AMPLIFIERS 339 12.3.1. PULSED-DOPED DEVICES AND OPTIMUM MATCH 339 12.3.2. PREDISTORTION TECHNIQUES 342 12.3.3. FEEDFORWARD TECHNIQUE 343 12.4. EFFICIENCY ENHANCEMENT TECHNIQUES FOR LINEAR AMPLIFIERS 344 12.4.1. CHIREIX OUTPHASING 345 12.4.2. DOHERTY AMPLIFIER 345 12.4.3. ENVELOPE ELIMINATION AND RESTORATION 347 12.4.4. BIAS ADAPTATION 348 12.5. LINEAR AMPLIFIER DESIGN CONSIDERATIONS 349 12.5.1. AMPLIFIER GAIN 349 12.5.2. MINIMUM SOURCE AND LOAD MISMATCH 350 12.6. LINEAR AMPLIFIER DESIGN EXAMPLES 350 REFERENCES 358 PROBLEMS 361 XII CONTENTS 13. HIGH-VOLTAGE POWER AMPLIFIER DESIGN 363 13.1. PERFORMANCE OVERVIEW OF HIGH-VOLTAGE TRANSISTORS 363 13.1.1. ADVANTAGES 366 13.1.2. APPLICATIONS 366 13.2. HIGH-VOLTAGE TRANSISTORS 366 13.2.1. SI BIPOLAR JUNCTION TRANSISTORS 367 13.2.2. SI LDMOS TRANSISTORS 367 13.2.3. GAAS FIELDPLATE MESFETS 368 13.2.4. GAAS FIELDPLATE PHEMTS 370 13.2.5. GAASHBTS 370 13.2.6. SIC MESFET 371 13.2.7. SIC GAN HEMTS 371 13.3. HIGH-POWER AMPLIFIER DESIGN CONSIDERATIONS 372 13.3.1. THERMAL DESIGN OF ACTIVE DEVICES 373 13.3.2. POWER HANDLING OF PASSIVE COMPONENTS 374 13.4. POWER AMPLIFIER DESIGN EXAMPLES 382 13.4.1. HV HYBRID AMPLIFIERS 382 13.4.2. HV MONOLITHIC AMPLIFIERS 386 13.5. BROADBAND HV AMPLIFIERS 38 8 13.6. SERIES FET AMPLIFIERS 390 REFERENCES 394 PROBLEMS 397 14. HYBRID AMPLIFIERS 399 14.1. HYBRID AMPLIFIER TECHNOLOGIES 399 14.2. PRINTED CIRCUIT BOARDS 399 14.3. HYBRID INTEGRATED CIRCUITS 401 14.3.1. THIN-FILM MIC TECHNOLOGY 405 14.3.2. THICK-FILM MIC TECHNOLOGY 406 14.3.3. CORKED CERAMIC AND GLASS-CERAMIC TECHNOLOGY 406 14.4. DESIGN OF INTERNALLY MATCHED POWER AMPLIFIERS 408 14.5. LOW-NOISE AMPLIFIERS 410 14.5.1. NARROWBAND LOW-NOISE AMPLIFIER 410 14.5.2. ULTRA-WIDEBAND LOW-NOISE AMPLIFIER 411 14.5.3. BROADBAND DISTRIBUTED LNA 412 14.6. POWER AMPLIFIERS 413 14.6.1. NARROWBAND POWER AMPLIFIER 413 14.6.2. BROADBAND POWER AMPLIFIER 416 REFERENCES 416 PROBLEMS 417 15. MONOLITHIC AMPLIFIERS 419 15.1. ADVANTAGES OF MONOLITHIC AMPLIFIERS 419 15.2. MONOLITHIC 1* TECHNOLOGY 420 15.2.1. MMIC FABRICATION 420 15.2.2. MMIC SUBSTRATES 421 15.2.3. MMIC ACTIVE DEVICES 422 15.2.4. MMIC MATCHING ELEMENTS 423 CONTENTS XIII 15.3. 15.4. 15.5. MMIC DESIGN 428 15.3.1. 15.3.2. 15.3.3. DESIGN 15.4.1. 15.4.2. 15.4.3. 15.4.4. 15.4.5. 15.4.6. 15.4.7. 15.4.8. 15.4.9. CAD TOOLS 428 DESIGN PROCEDURE 428 EM SIMULATORS 429 EXAMPLES 431 LOW-NOISE AMPLIFIER 431 HIGH-POWER LIMITER/LNA 431 NARROWBAND PA 432 BROADBAND PA 434 ULTRA-WIDEBAND PA 437 HIGH-POWER AMPLIFIER 440 HIGH-EFFICIENCY PA 441 MILLIMETER-WAVE PA 441 WIRELESS POWER AMPLIFIER DESIGN EXAMPLE CMOS FABRICATION 448 REFERENCES PROBL ;MS 449 452 442 16. THERMAL DESIGN 453 16.1. THERMAL BASICS 454 16.2. TRANSISTOR THERMAL DESIGN 456 16.2.1. COOKE MODEL 456 16.2.2. SINGLE-GATE THERMAL MODEL 457 16.2.3. MULTIPLE-GATE THERMAL MODEL 458 16.3. AMPLIFIER THERMAL DESIGN 461 16.4. PULSED OPERATION 464 16.5. HEAT SINK DESIGN 467 16.5.1. CONVECTIONAL AND FORCED COOLING 470 16.5.2. DESIGN EXAMPLE 471 16.6. THERMAL RESISTANCE MEASUREMENT 472 16.6.1. IR IMAGE MEASUREMENT 472 16.6.2. LIQUID CRYSTAL MEASUREMENT 473 16.6.3. ELECTRICAL MEASUREMENT TECHNIQUE 475 REFERENCES 476 PROBLEMS 477 17. STABILITY ANALYSIS 479 17.1. EVEN-MODE OSCILLATIONS 480 17.1.1. EVEN-MODE STABILITY ANALYSIS 480 17.1.2. EVEN-MODE OSCILLATION SUPPRESSION TECHNIQUES 487 17.2. ODD-MODE OSCILLATIONS 490 17.2.1. ODD-MODE STABILITY ANALYSIS 491 17.2.2. ODD-MODE OSCILLATION SUPPRESSION TECHNIQUES 499 17.2.3. INSTABILITY IN DISTRIBUTED AMPLIFIERS 500 17.3. PARAMETRIC OSCILLATIONS 500 17.4. SPURIOUS PARAMETRIC OSCILLATIONS 501 17.5. LOW-FREQUENCY OSCILLATIONS 502 XIV CONTENTS REFERENCES 503 PROBLEMS 504 18. BIASING NETWORKS 507 18.1. BIASING OF TRANSISTORS 507 18.1.1. TRANSISTOR BIAS POINT 507 18.1.2. BIASING SCHEMES 509 18.2. BIASING NETWORK DESIGN CONSIDERATIONS 513 18.2.1. MICROSTRIP BIASING CIRCUIT 514 18.2.2. LUMPED-ELEMENT BIASING CIRCUIT 516 18.2.3. HIGH-PAE BIASING CIRCUIT 519 18.2.4. ELECTROMIGRATION CURRENT LIMITS 520 18.3. SELF-BIAS TECHNIQUE 520 18.4. BIASING MULTISTAGE AMPLIFIERS 523 18.5. BIASING CIRCUITRY FOR LOW-FREQUENCY STABILIZATION 524 18.6. BIASING SEQUENCE 524 REFERENCES 525 PROBLEMS 526 19. POWER COMBINING 527 19.1. DEVICE-LEVEL POWER COMBINING 527 19.2. CIRCUIT-LEVEL POWER COMBINING 530 19.2.1. GRACEFUL DEGRADATION 532 19.2.2. POWER COMBINING EFFICIENCY 534 19.3. POWER DIVIDERS, HYBRIDS, AND COUPLERS 537 19.3.1. POWER DIVIDERS 537 19.3.2. 90 HYBRIDS 540 19.3.3. COUPLED-LINE DIRECTIONAL COUPLERS 541 19.4. N-WAY COMBINERS 545 19.5. CORPORATE STRUCTURES 546 19.6. POWER HANDLING OF ISOLATION RESISTORS 550 19.7. SPATIAL POWER COMBINERS 551 19.8. COMPARISON OF POWER COMBINING SCHEMES 553 REFERENCES 553 PROBLEMS 555 20. INTEGRATED FUNCTION AMPLIFIERS 557 20.1. INTEGRATED LIMITER/LNA 557 20.1.1. LIMITER/LNA TOPOLOGY 558 20.1.2. LIMITER REQUIREMENTS 559 20.1.3. SCHOTTKY DIODE DESIGN AND LIMITER CONFIGURATION 560 20.1.4. 10-W LIMITER/LNA DESIGN 562 20.1.5. TEST DATA AND DISCUSSIONS 565 20.2. TRANSMITTER CHAIN 567 20.2.1. VARIABLE GAIN AMPLIFIER 569 20.2.2. VARIABLE POWER AMPLIFIER 571 20.2.3. AMPLIFIER TEMPERATURE COMPENSATION 573 20.2.4. POWER MONITOR/DETECTOR 575 20.2.5. PROTECTION AGAINST LOAD MISMATCH 580 CONTENTS XV 20.3. CASCADING OF AMPLIFIERS 581 REFERENCES 581 PROBLEMS 583 21. AMPLIFIER PACKAGES 585 21.1. AMPLIFIER PACKAGING OVERVIEW 585 21.1.1. BRIEF HISTORY 587 21.1.2. TYPES OF PACKAGES 590 21.2. MATERIALS FOR PACKAGES 592 21.2.1. CERAMICS 592 21.2.2. POLYMERS 592 21.2.3. METALS 592 21.3. CERAMIC PACKAGE DESIGN 593 21.3.1. DESIGN OF RF FEEDTHROUGH 593 21.3.2. CAVITY DESIGN 595 21.3.3. BIAS LINES 597 21.3.4. CERAMIC PACKAGE CONSTRUCTION 597 21.3.5. CERAMIC PACKAGE MODEL 599 21.4. PLASTIC PACKAGE DESIGN 599 21.4.1. PLASTIC PACKAGES 600 21.4.2. PLASTIC PACKAGE MODEL 600 21.5. PACKAGE ASSEMBLY 601 21.5.1. DIE ATTACH 602 21.5.2. DIE WIRE BONDING 603 21.5.3. ASSEMBLY OF CERAMIC PACKAGES 605 21.5.4. ASSEMBLY OF PLASTIC PACKAGES 606 21.5.5. HERMETIC SEALING AND ENCAPSULATION 607 21.6. THERMAL CONSIDERATIONS 608 21.7. CAD TOOLS FOR PACKAGES 609 21.8. POWER AMPLIFIER MODULES 609 REFERENCES 611 PROBLEMS 611 22. TRANSISTOR AND AMPLIFIER MEASUREMENTS 613 22.1. TRANSISTOR MEASUREMENTS 613 22.1.1. I-V MEASUREMENTS 614 22.1.2. S-PARAMETER MEASUREMENTS 615 22.1.3. NOISE PARAMETER MEASUREMENTS 619 22.1.4. SOURCE-PULL AND LOAD-PULL MEASUREMENTS 620 22.2. AMPLIFIER MEASUREMENTS 623 22.2.1. MEASUREMENTS USING RF PROBES 624 22.2.2. DRIVER AMPLIFIER AND HPA TEST 625 22.2.3. LARGE-SIGNAL OUTPUT VSWR 626 22.2.4. NOISE FIGURE MEASUREMENTS 626 22.3. DISTORTION MEASUREMENTS 627 22.3.1. AM-AM AND AM-PM 627 22.3.2. 1***** MEASUREMENT 628 22.3.3. ACPR MEASUREMENT 629 22.3.4. NPR MEASUREMENT 630 22.3.5. EVM MEASUREMENT 630 XVI CONTENTS 22.4. PHASE NOISE MEASUREMENT 630 22.5. RECOVERY TIME MEASUREMENT 632 REFERENCES 635 PROBLEMS 636 APPENDIX A. PHYSICAL CONSTANTS AND OTHER DATA 637 APPENDIX B. UNITS AND SYMBOLS 639 APPENDIX C. FREQUENCY BAND DESIGNATIONS 641 APPENDIX D. DECIBEL UNITS (DB) 643 APPENDIX E. MATHEMATICAL RELATIONSHIPS 647 APPENDIX F. SMITH CHART 649 APPENDIX G. GRAPHICAL SYMBOLS 651 APPENDIX H. ACRONYMS AND ABBREVIATIONS 653 APPENDIX I. LIST OF SYMBOLS 657 APPENDIX J. MULTIPLE ACCESS AND MODULATION TECHNIQUES 661 INDEX 663
any_adam_object	1
author	Bahl, Inder J.
author_facet	Bahl, Inder J.
author_role	aut
author_sort	Bahl, Inder J.
author_variant	i j b ij ijb
building	Verbundindex
bvnumber	BV035604645
callnumber-first	T - Technology
callnumber-label	TK6565
callnumber-raw	TK6565.A55
callnumber-search	TK6565.A55
callnumber-sort	TK 46565 A55
callnumber-subject	TK - Electrical and Nuclear Engineering
classification_rvk	ZN 5470
ctrlnum	(OCoLC)244768433 (DE-599)BVBBV035604645
dewey-full	621.3815/35
dewey-hundreds	600 - Technology (Applied sciences)
dewey-ones	621 - Applied physics
dewey-raw	621.3815/35
dewey-search	621.3815/35
dewey-sort	3621.3815 235
dewey-tens	620 - Engineering and allied operations
discipline	Elektrotechnik / Elektronik / Nachrichtentechnik
format	Book
fullrecord	<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01941nam a2200493zc 4500</leader><controlfield tag="001">BV035604645</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">20110518 </controlfield><controlfield tag="007">t</controlfield><controlfield tag="008">090707s2009 xxuad\|\| \|\|\|\| 00\|\|\| eng d</controlfield><datafield tag="010" ind1=" " ind2=" "><subfield code="a">2008049895</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9780470391662</subfield><subfield code="c">cloth</subfield><subfield code="9">978-0-470-39166-2</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)244768433</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV035604645</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">aacr</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="044" ind1=" " ind2=" "><subfield code="a">xxu</subfield><subfield code="c">US</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-634</subfield><subfield code="a">DE-859</subfield><subfield code="a">DE-29T</subfield></datafield><datafield tag="050" ind1=" " ind2="0"><subfield code="a">TK6565.A55</subfield></datafield><datafield tag="082" ind1="0" ind2=" "><subfield code="a">621.3815/35</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">ZN 5470</subfield><subfield code="0">(DE-625)157462:</subfield><subfield code="2">rvk</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Bahl, Inder J.</subfield><subfield code="e">Verfasser</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Fundamentals of RF and microwave transistor amplifiers</subfield><subfield code="c">Inder Bahl</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">Hoboken, N.J.</subfield><subfield code="b">Wiley</subfield><subfield code="c">2009</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">XXIII, 671 S.</subfield><subfield code="b">Ill., graph. Darst.</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Amplifiers, Radio frequency</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Microwave amplifiers</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Transistor amplifiers</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Mikrowellenverstärker</subfield><subfield code="0">(DE-588)4169901-4</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Schaltverstärker</subfield><subfield code="0">(DE-588)4179393-6</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Hochfrequenzverstärker</subfield><subfield code="0">(DE-588)4160154-3</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Schaltungsentwurf</subfield><subfield code="0">(DE-588)4179389-4</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Leistungsverstärker</subfield><subfield code="0">(DE-588)4129735-0</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">Leistungsverstärker</subfield><subfield code="0">(DE-588)4129735-0</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="1"><subfield code="a">Mikrowellenverstärker</subfield><subfield code="0">(DE-588)4169901-4</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="2"><subfield code="a">Hochfrequenzverstärker</subfield><subfield code="0">(DE-588)4160154-3</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="3"><subfield code="a">Schaltverstärker</subfield><subfield code="0">(DE-588)4179393-6</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="4"><subfield code="a">Schaltungsentwurf</subfield><subfield code="0">(DE-588)4179389-4</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="m">GBV Datenaustausch</subfield><subfield code="q">application/pdf</subfield><subfield code="u">http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=017659898&sequence=000003&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA</subfield><subfield code="3">Inhaltsverzeichnis</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-017659898</subfield></datafield></record></collection>
id	DE-604.BV035604645
illustrated	Illustrated
indexdate	2024-07-09T21:41:28Z
institution	BVB
isbn	9780470391662
language	English
lccn	2008049895
oai_aleph_id	oai:aleph.bib-bvb.de:BVB01-017659898
oclc_num	244768433
open_access_boolean
owner	DE-634 DE-859 DE-29T
owner_facet	DE-634 DE-859 DE-29T
physical	XXIII, 671 S. Ill., graph. Darst.
publishDate	2009
publishDateSearch	2009
publishDateSort	2009
publisher	Wiley
record_format	marc
spelling	Bahl, Inder J. Verfasser aut Fundamentals of RF and microwave transistor amplifiers Inder Bahl Hoboken, N.J. Wiley 2009 XXIII, 671 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Amplifiers, Radio frequency Microwave amplifiers Transistor amplifiers Mikrowellenverstärker (DE-588)4169901-4 gnd rswk-swf Schaltverstärker (DE-588)4179393-6 gnd rswk-swf Hochfrequenzverstärker (DE-588)4160154-3 gnd rswk-swf Schaltungsentwurf (DE-588)4179389-4 gnd rswk-swf Leistungsverstärker (DE-588)4129735-0 gnd rswk-swf Leistungsverstärker (DE-588)4129735-0 s Mikrowellenverstärker (DE-588)4169901-4 s Hochfrequenzverstärker (DE-588)4160154-3 s Schaltverstärker (DE-588)4179393-6 s Schaltungsentwurf (DE-588)4179389-4 s DE-604 GBV Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=017659898&sequence=000003&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis
spellingShingle	Bahl, Inder J. Fundamentals of RF and microwave transistor amplifiers Amplifiers, Radio frequency Microwave amplifiers Transistor amplifiers Mikrowellenverstärker (DE-588)4169901-4 gnd Schaltverstärker (DE-588)4179393-6 gnd Hochfrequenzverstärker (DE-588)4160154-3 gnd Schaltungsentwurf (DE-588)4179389-4 gnd Leistungsverstärker (DE-588)4129735-0 gnd
subject_GND	(DE-588)4169901-4 (DE-588)4179393-6 (DE-588)4160154-3 (DE-588)4179389-4 (DE-588)4129735-0
title	Fundamentals of RF and microwave transistor amplifiers
title_auth	Fundamentals of RF and microwave transistor amplifiers
title_exact_search	Fundamentals of RF and microwave transistor amplifiers
title_full	Fundamentals of RF and microwave transistor amplifiers Inder Bahl
title_fullStr	Fundamentals of RF and microwave transistor amplifiers Inder Bahl
title_full_unstemmed	Fundamentals of RF and microwave transistor amplifiers Inder Bahl
title_short	Fundamentals of RF and microwave transistor amplifiers
title_sort	fundamentals of rf and microwave transistor amplifiers
topic	Amplifiers, Radio frequency Microwave amplifiers Transistor amplifiers Mikrowellenverstärker (DE-588)4169901-4 gnd Schaltverstärker (DE-588)4179393-6 gnd Hochfrequenzverstärker (DE-588)4160154-3 gnd Schaltungsentwurf (DE-588)4179389-4 gnd Leistungsverstärker (DE-588)4129735-0 gnd
topic_facet	Amplifiers, Radio frequency Microwave amplifiers Transistor amplifiers Mikrowellenverstärker Schaltverstärker Hochfrequenzverstärker Schaltungsentwurf Leistungsverstärker
url	http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=017659898&sequence=000003&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA
work_keys_str_mv	AT bahlinderj fundamentalsofrfandmicrowavetransistoramplifiers

Holdings

There is no print copy available.

Interlibrary loan Place Request Caution: Not in THWS collection! Indexes

MARC

Record in the Search Index

There is no print copy available.

Similar Items