Fundamentals of RF and microwave transistor amplifiers:
Gespeichert in:
| 1. Verfasser: | |
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| Format: | Buch |
| Sprache: | English |
| Veröffentlicht: |
Hoboken, N.J.
Wiley
2009
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| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | XXIII, 671 S. Ill., graph. Darst. |
| ISBN: | 9780470391662 |
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| 245 | 1 | 0 | |a Fundamentals of RF and microwave transistor amplifiers |c Inder Bahl |
| 264 | 1 | |a Hoboken, N.J. |b Wiley |c 2009 | |
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| 650 | 4 | |a Microwave amplifiers | |
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Datensatz im Suchindex
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| adam_text | FUNDAMENTALS OF RF AND MICROWAVE TRANSISTOR AMPLIFIERS INDER J. BAHL
WILEY A JOHN WILEY & SONS, INC., PUBLICATION CONTENTS FOREWORD XVII
PREFACE XIX 1. INTRODUCTION 1 1.1. TRANSISTOR AMPLIFIER 1 1.2. EARLY
HISTORY OF TRANSISTOR AMPLIFIERS 3 1.3. BENEFITS OF TRANSISTOR
AMPLIFIERS 3 1.4. TRANSISTORS 4 1.5. DESIGN OF AMPLIFIERS 5 1.6.
AMPLIFIER MANUFACTURING TECHNOLOGIES 7 1.7. APPLICATIONS OF AMPLIFIERS 7
1.8. AMPLIFIER COST 12 1.9. CURRENT TRENDS 12 1.10. BOOK ORGANIZATION 13
REFERENCES 14 2. LINEAR NETWORK ANALYSIS 17 2.1. IMPEDANCE MATRIX 18
2.2. ADMITTANCE MATRIX 20 2.3. ABCD PARAMETERS 21 2.4. S-PARAMETERS 23
2.4.1. S-PARAMETERS FOR A ONE-PORT NETWORK 29 2.5. RELATIONSHIPS BETWEEN
VARIOUS TWO-PORT PARAMETERS 29 REFERENCES 31 PROBLEMS 31 3. AMPLIFIER
CHARACTERISTICS AND DEFINITIONS 33 3.1. BANDWIDTH 33 3.2. POWER GAIN 34
3.3. INPUT AND OUTPUT VSWR 38 3.4. OUTPUT POWER 38 3.5. POWER ADDED
EFFICIENCY 39 3.6. INTERMODULATION DISTORTION 40 3.6.1. IP3 40 3.6.2.
ACPR 41 3.6.3. EVM 41 3.7. HARMONIC POWER 43 VIII CONTENTS 3.8.
PEAK-TO-AVERAGE RATIO 43 3.9. COMBINER EFFICIENCY 44 3.10. NOISE
CHARACTERIZATION 46 3.10.1. NOISE FIGURE 47 3.10.2. NOISE TEMPERATURE 47
3.10.3. NOISE BANDWIDTH 48 3.10.4. OPTIMUM NOISE MATCH 48 3.10.5.
CONSTANT NOISE FIGURE AND GAIN CIRCLES 3.10.6. SIMULTANEOUS INPUT AND
NOISE MATCH 3.11. DYNAMIC RANGE 51 3.12. MULTISTAGE AMPLIFIER
CHARACTERISTICS 53 3.12.1. MULTISTAGE IP3 53 3.12.2. MULTISTAGE *** 54
3.12.3. MULTISTAGE NF 54 3.13. GATE AND DRAIN PUSHING FACTORS 56 3.14.
AMPLIFIER TEMPERATURE COEFFICIENT 57 3.15. MEAN TIME TO FAILURE 58
REFERENCES 59 PROBLEMS 59 4. TRANSISTORS 4.1. TRANSISTOR TYPES 61 4.2.
SILICON BIPOLAR TRANSISTOR 63 4.2.1. FIGURE OF MERIT 65 4.2.2.
HIGH-FREQUENCY NOISE PERFORMANCE OF SILICON BJT 66 4.2.3. POWER
PERFORMANCE 67 4.3. GAAS MESFET 68 4.3.1. SMALL-SIGNAL EQUIVALENT
CIRCUIT 71 4.3.2. FIGURE OF MERIT 72 4.3.3. HIGH-FREQUENCY NOISE
PROPERTIES OF MESFETS 75 4.4. HETEROJUNCTION FIELD EFFECT TRANSISTOR 77
4.4.1. HIGH-FREQUENCY NOISE PROPERTIES OF HEMTS 78 4.4.2. INDIUM
PHOSPHIDE PHEMTS 79 4.5. HETEROJUNCTION BIPOLAR TRANSISTORS 80 4.5.1.
HIGH-FREQUENCY NOISE PROPERTIES OF HBTS 83 4.5.2. SIGE HETEROJUNCTION
BIPOLAR TRANSISTORS 85 4.6. MOSFET 86 REFERENCES 88 PROBLEMS 90 5.
TRANSISTOR MODELS 91 5.1. TRANSISTOR MODEL TYPES 91 5.1.1.
PHYSICS/ELECTROMAGNETIC THEORY BASED MODELS 91 5.1.2. ANALYTICAL OR
HYBRID MODELS 92 5.1.3. MEASUREMENT BASED MODELS 92 5.2. MESFET MODELS
99 5.2.1. LINEAR MODELS 99 5.2.2. NONLINEAR MODELS 102 5.3. PHEMT MODELS
105 5.3.1. LINEAR MODELS 105 49 51 61 CONTENTS IX 5.3.2. NONLINEAR
MODELS 106 5.4. HBT MODEL 109 5.5. MOSFET MODELS 110 5.6. BJT MODELS 111
5.7. TRANSISTOR MODEL SCALING 112 5.8. SOURCE-PULL AND LOAD-PULL DATA
113 5.8.1. THEORETICAL LOAD-PULL DATA 113 5.8.2. MEASURED POWER AND ***
SOURCE PULL AND LOAD PULL 116 5.8.3. MEASURED IP3 SOURCE AND LOAD
IMPEDANCE 118 5.8.4. SOURCE AND LOAD IMPEDANCE SCALING 118 5.9.
TEMPERATURE-DEPENDENT MODELS 120 REFERENCES 121 PROBLEMS 123 6. MATCHING
NETWORK COMPONENTS 125 6.1. IMPEDANCE MATCHING ELEMENTS 12 5 6.2.
TRANSMISSION LINE MATCHING ELEMENTS 125 6.2.1. MICROSTRIP 126 6.2.2.
COPLANAR LINES 134 6.3. LUMPED ELEMENTS 134 6.3.1. CAPACITORS 135 6.3.2.
INDUCTORS 136 6.3.3. RESISTORS 139 6.4. BOND WIRE INDUCTORS 141 6.4.1.
SINGLE WIRE 141 6.4.2. GROUND PLANE EFFECT 142 6.4.3. MULTIPLE WIRES 143
6.4.4. MAXIMUM CURRENT HANDLING OF WIRE 145 6.5. BROADBAND INDUCTORS 145
REFERENCES 147 PROBLEMS 147 7. IMPEDANCE MATCHING TECHNIQUES 149 7.1.
ONE-PORT AND TWO-PORT NETWORKS 149 7.2. NARROWBAND MATCHING TECHNIQUES
150 7.2.1. LUMPED-ELEMENT MATCHING TECHNIQUES 150 7.2.2. TRANSMISSION
LINE MATCHING TECHNIQUES 156 7.3. WIDEBAND MATCHING TECHNIQUES 163
7.3.1. GAIN-BANDWIDTH LIMITATIONS 164 7.3.2. LUMPED-ELEMENT WIDEBAND
MATCHING TECHNIQUES 169 7.3.3. TRANSMISSION LINE WIDEBAND MATCHING
NETWORKS 172 7.3.4. BALUN-TYPE WIDEBAND MATCHING TECHNIQUES 177 7.3.5.
BRIDGED-T MATCHING NETWORK 180 REFERENCES 182 PROBLEMS 183 8. AMPLIFIER
CLASSES AND ANALYSES 185 8.1. CLASSES OF AMPLIFIERS 18 5 8.2. ANALYSIS
OF CLASS-A AMPLIFIERS 188 X CONTENTS 8.3. ANALYSIS OF CLASS-B AMPLIFIERS
190 8.3.1. SINGLE-ENDED CLASS-B AMPLIFIER 191 8.3.2. PUSH-PULL CLASS-B
AMPLIFIER 192 8.3.3. OVERDRIVEN CLASS-B AMPLIFIER 194 8.4. ANALYSIS OF
CLASS-C AMPLIFIERS 196 8.5. ANALYSIS OF CLASS-E AMPLIFIERS 197 8.6.
ANALYSIS OF CLASS-F AMPLIFIERS 201 8.7. COMPARISON OF VARIOUS AMPLIFIER
CLASSES 204 REFERENCES 207 PROBLEMS 208 9. AMPLIFIER DESIGN METHODS 9.1.
AMPLIFIER DESIGN 211 9.1.1. TRANSISTOR TYPE AND FABRICATION TECHNOLOGY
212 9.1.2. TRANSISTOR SIZE SELECTION 212 9.1.3. DESIGN METHOD 213 9.1.4.
CIRCUIT TOPOLOGY 213 9.1.5. CIRCUIT ANALYSIS AND OPTIMIZATION 214 9.1.6.
STABILITY AND THERMAL ANALYSES 215 9.2. AMPLIFIER DESIGN TECHNIQUES 215
9.2.1. LOAD-LINE METHOD 216 9.2.2. LOW LOSS MATCH DESIGN TECHNIQUE 218
9.2.3. NONLINEAR DESIGN METHOD 221 9.2.4. TAGUCHI EXPERIMENTAL METHOD
222 9.3. MATCHING NETWORKS 226 9.3.1. REACTIVE/RESISTIVE 226 9.3.2.
CLUSTER MATCHING TECHNIQUE 228 9.4. AMPLIFIER DESIGN EXAMPLES 230 9.4.1.
LOW-NOISE AMPLIFIER DESIGN 230 9.4.2. MAXIMUM GAIN AMPLIFIER DESIGN 232
9.4.3. POWER AMPLIFIER DESIGN 234 9.4.4. MULTISTAGE DRIVER AMPLIFIER
DESIGN 239 9.4.5. GAAS HBT POWER AMPLIFER 244 9.5. SILICON BASED
AMPLIFIER DESIGN 248 9.5.1. SILCLNA 248 9.5.2. SI 1* POWER AMPLIFIERS
249 REFERENCES 255 PROBLEMS 257 10. HIGH-EFFICIENCY AMPLIFIER TECHNIQUES
259 10.1. HIGH-EFFICIENCY DESIGN 259 10.1.1. OVERDRIVEN AMPLIFIER DESIGN
261 10.1.2. CLASS-B AMPLIFIER DESIGN 263 10.1.3. CLASS-E AMPLIFIER
DESIGN 269 10.1.4. CLASS-F AMPLIFIER DESIGN 274 10.2. HARMONIC REACTION
AMPLIFIER 282 10.3. HARMONIC INJECTION TECHNIQUE 282 10.4. HARMONIC
CONTROL AMPLIFIER 283 10.5. HIGH-PAE DESIGN CONSIDERATIONS 284 211
CONTENTS XI 10.5.1. HARMONIE TUNING BENCH 284 10.5.2. MATCHING NETWORK
LOSS CALCULATION 287 10.5.3. MATCHING NETWORK LOSS REDUCTION 289
REFERENCES 290 PROBLEMS 294 11. BROADBAND AMPLIFIER TECHNIQUES 295 11.1.
TRANSISTOR BANDWIDTH LIMITATIONS 29 5 11.1.1. TRANSISTOR GAIN ROLL-OFF
295 11.1.2. VARIABLE DEVICE INPUT AND OUTPUT IMPEDANCE 296 11.1.3.
POWER-BANDWIDTH PRODUCT 297 11.2. BROADBAND AMPLIFIER TECHNIQUES 297
11.2.1. REACTIVE/RESISTIVE TOPOLOGY 298 11.2.2. FEEDBACK AMPLIFIERS 303
11.2.3. BALANCED AMPLIFIERS 307 11.2.4. DISTRIBUTED AMPLIFIERS 310
11.2.5. ACTIVE MATCHING BROADBAND TECHNIQUE 320 11.2.6. CASCODE
CONFIGURATION 324 11.2.7. COMPARISON OF BROADBAND TECHNIQUES 325 11.3.
BROADBAND POWER AMPLIFIER DESIGN CONSIDERATIONS 325 11.3.1. TOPOLOGY
SELECTION 326 11.3.2. DEVICE ASPECT RATIO 326 11.3.3. LOW-LOSS MATCHING
NETWORKS 327 11.3.4. GAIN FLATNESS TECHNIQUE 327 11.3.5. HARMONIC
TERMINATION 327 11.3.6. THERMAL DESIGN 327 REFERENCES 328 PROBLEMS 328
12. LINEARIZATION TECHNIQUES 331 12.1. NONLINEAR ANALYSIS 332 12.1.1.
SINGLE-TONE ANALYSIS 332 12.1.2. TWO-TONE ANALYSIS 334 12.2. PHASE
DISTORTION 337 12.3. LINEARIZATION OF POWER AMPLIFIERS 339 12.3.1.
PULSED-DOPED DEVICES AND OPTIMUM MATCH 339 12.3.2. PREDISTORTION
TECHNIQUES 342 12.3.3. FEEDFORWARD TECHNIQUE 343 12.4. EFFICIENCY
ENHANCEMENT TECHNIQUES FOR LINEAR AMPLIFIERS 344 12.4.1. CHIREIX
OUTPHASING 345 12.4.2. DOHERTY AMPLIFIER 345 12.4.3. ENVELOPE
ELIMINATION AND RESTORATION 347 12.4.4. BIAS ADAPTATION 348 12.5. LINEAR
AMPLIFIER DESIGN CONSIDERATIONS 349 12.5.1. AMPLIFIER GAIN 349 12.5.2.
MINIMUM SOURCE AND LOAD MISMATCH 350 12.6. LINEAR AMPLIFIER DESIGN
EXAMPLES 350 REFERENCES 358 PROBLEMS 361 XII CONTENTS 13. HIGH-VOLTAGE
POWER AMPLIFIER DESIGN 363 13.1. PERFORMANCE OVERVIEW OF HIGH-VOLTAGE
TRANSISTORS 363 13.1.1. ADVANTAGES 366 13.1.2. APPLICATIONS 366 13.2.
HIGH-VOLTAGE TRANSISTORS 366 13.2.1. SI BIPOLAR JUNCTION TRANSISTORS 367
13.2.2. SI LDMOS TRANSISTORS 367 13.2.3. GAAS FIELDPLATE MESFETS 368
13.2.4. GAAS FIELDPLATE PHEMTS 370 13.2.5. GAASHBTS 370 13.2.6. SIC
MESFET 371 13.2.7. SIC GAN HEMTS 371 13.3. HIGH-POWER AMPLIFIER DESIGN
CONSIDERATIONS 372 13.3.1. THERMAL DESIGN OF ACTIVE DEVICES 373 13.3.2.
POWER HANDLING OF PASSIVE COMPONENTS 374 13.4. POWER AMPLIFIER DESIGN
EXAMPLES 382 13.4.1. HV HYBRID AMPLIFIERS 382 13.4.2. HV MONOLITHIC
AMPLIFIERS 386 13.5. BROADBAND HV AMPLIFIERS 38 8 13.6. SERIES FET
AMPLIFIERS 390 REFERENCES 394 PROBLEMS 397 14. HYBRID AMPLIFIERS 399
14.1. HYBRID AMPLIFIER TECHNOLOGIES 399 14.2. PRINTED CIRCUIT BOARDS 399
14.3. HYBRID INTEGRATED CIRCUITS 401 14.3.1. THIN-FILM MIC TECHNOLOGY
405 14.3.2. THICK-FILM MIC TECHNOLOGY 406 14.3.3. CORKED CERAMIC AND
GLASS-CERAMIC TECHNOLOGY 406 14.4. DESIGN OF INTERNALLY MATCHED POWER
AMPLIFIERS 408 14.5. LOW-NOISE AMPLIFIERS 410 14.5.1. NARROWBAND
LOW-NOISE AMPLIFIER 410 14.5.2. ULTRA-WIDEBAND LOW-NOISE AMPLIFIER 411
14.5.3. BROADBAND DISTRIBUTED LNA 412 14.6. POWER AMPLIFIERS 413 14.6.1.
NARROWBAND POWER AMPLIFIER 413 14.6.2. BROADBAND POWER AMPLIFIER 416
REFERENCES 416 PROBLEMS 417 15. MONOLITHIC AMPLIFIERS 419 15.1.
ADVANTAGES OF MONOLITHIC AMPLIFIERS 419 15.2. MONOLITHIC 1* TECHNOLOGY
420 15.2.1. MMIC FABRICATION 420 15.2.2. MMIC SUBSTRATES 421 15.2.3.
MMIC ACTIVE DEVICES 422 15.2.4. MMIC MATCHING ELEMENTS 423 CONTENTS XIII
15.3. 15.4. 15.5. MMIC DESIGN 428 15.3.1. 15.3.2. 15.3.3. DESIGN 15.4.1.
15.4.2. 15.4.3. 15.4.4. 15.4.5. 15.4.6. 15.4.7. 15.4.8. 15.4.9. CAD
TOOLS 428 DESIGN PROCEDURE 428 EM SIMULATORS 429 EXAMPLES 431 LOW-NOISE
AMPLIFIER 431 HIGH-POWER LIMITER/LNA 431 NARROWBAND PA 432 BROADBAND PA
434 ULTRA-WIDEBAND PA 437 HIGH-POWER AMPLIFIER 440 HIGH-EFFICIENCY PA
441 MILLIMETER-WAVE PA 441 WIRELESS POWER AMPLIFIER DESIGN EXAMPLE CMOS
FABRICATION 448 REFERENCES PROBL ;MS 449 452 442 16. THERMAL DESIGN 453
16.1. THERMAL BASICS 454 16.2. TRANSISTOR THERMAL DESIGN 456 16.2.1.
COOKE MODEL 456 16.2.2. SINGLE-GATE THERMAL MODEL 457 16.2.3.
MULTIPLE-GATE THERMAL MODEL 458 16.3. AMPLIFIER THERMAL DESIGN 461 16.4.
PULSED OPERATION 464 16.5. HEAT SINK DESIGN 467 16.5.1. CONVECTIONAL AND
FORCED COOLING 470 16.5.2. DESIGN EXAMPLE 471 16.6. THERMAL RESISTANCE
MEASUREMENT 472 16.6.1. IR IMAGE MEASUREMENT 472 16.6.2. LIQUID CRYSTAL
MEASUREMENT 473 16.6.3. ELECTRICAL MEASUREMENT TECHNIQUE 475 REFERENCES
476 PROBLEMS 477 17. STABILITY ANALYSIS 479 17.1. EVEN-MODE OSCILLATIONS
480 17.1.1. EVEN-MODE STABILITY ANALYSIS 480 17.1.2. EVEN-MODE
OSCILLATION SUPPRESSION TECHNIQUES 487 17.2. ODD-MODE OSCILLATIONS 490
17.2.1. ODD-MODE STABILITY ANALYSIS 491 17.2.2. ODD-MODE OSCILLATION
SUPPRESSION TECHNIQUES 499 17.2.3. INSTABILITY IN DISTRIBUTED AMPLIFIERS
500 17.3. PARAMETRIC OSCILLATIONS 500 17.4. SPURIOUS PARAMETRIC
OSCILLATIONS 501 17.5. LOW-FREQUENCY OSCILLATIONS 502 XIV CONTENTS
REFERENCES 503 PROBLEMS 504 18. BIASING NETWORKS 507 18.1. BIASING OF
TRANSISTORS 507 18.1.1. TRANSISTOR BIAS POINT 507 18.1.2. BIASING
SCHEMES 509 18.2. BIASING NETWORK DESIGN CONSIDERATIONS 513 18.2.1.
MICROSTRIP BIASING CIRCUIT 514 18.2.2. LUMPED-ELEMENT BIASING CIRCUIT
516 18.2.3. HIGH-PAE BIASING CIRCUIT 519 18.2.4. ELECTROMIGRATION
CURRENT LIMITS 520 18.3. SELF-BIAS TECHNIQUE 520 18.4. BIASING
MULTISTAGE AMPLIFIERS 523 18.5. BIASING CIRCUITRY FOR LOW-FREQUENCY
STABILIZATION 524 18.6. BIASING SEQUENCE 524 REFERENCES 525 PROBLEMS 526
19. POWER COMBINING 527 19.1. DEVICE-LEVEL POWER COMBINING 527 19.2.
CIRCUIT-LEVEL POWER COMBINING 530 19.2.1. GRACEFUL DEGRADATION 532
19.2.2. POWER COMBINING EFFICIENCY 534 19.3. POWER DIVIDERS, HYBRIDS,
AND COUPLERS 537 19.3.1. POWER DIVIDERS 537 19.3.2. 90 HYBRIDS 540
19.3.3. COUPLED-LINE DIRECTIONAL COUPLERS 541 19.4. N-WAY COMBINERS 545
19.5. CORPORATE STRUCTURES 546 19.6. POWER HANDLING OF ISOLATION
RESISTORS 550 19.7. SPATIAL POWER COMBINERS 551 19.8. COMPARISON OF
POWER COMBINING SCHEMES 553 REFERENCES 553 PROBLEMS 555 20. INTEGRATED
FUNCTION AMPLIFIERS 557 20.1. INTEGRATED LIMITER/LNA 557 20.1.1.
LIMITER/LNA TOPOLOGY 558 20.1.2. LIMITER REQUIREMENTS 559 20.1.3.
SCHOTTKY DIODE DESIGN AND LIMITER CONFIGURATION 560 20.1.4. 10-W
LIMITER/LNA DESIGN 562 20.1.5. TEST DATA AND DISCUSSIONS 565 20.2.
TRANSMITTER CHAIN 567 20.2.1. VARIABLE GAIN AMPLIFIER 569 20.2.2.
VARIABLE POWER AMPLIFIER 571 20.2.3. AMPLIFIER TEMPERATURE COMPENSATION
573 20.2.4. POWER MONITOR/DETECTOR 575 20.2.5. PROTECTION AGAINST LOAD
MISMATCH 580 CONTENTS XV 20.3. CASCADING OF AMPLIFIERS 581 REFERENCES
581 PROBLEMS 583 21. AMPLIFIER PACKAGES 585 21.1. AMPLIFIER PACKAGING
OVERVIEW 585 21.1.1. BRIEF HISTORY 587 21.1.2. TYPES OF PACKAGES 590
21.2. MATERIALS FOR PACKAGES 592 21.2.1. CERAMICS 592 21.2.2. POLYMERS
592 21.2.3. METALS 592 21.3. CERAMIC PACKAGE DESIGN 593 21.3.1. DESIGN
OF RF FEEDTHROUGH 593 21.3.2. CAVITY DESIGN 595 21.3.3. BIAS LINES 597
21.3.4. CERAMIC PACKAGE CONSTRUCTION 597 21.3.5. CERAMIC PACKAGE MODEL
599 21.4. PLASTIC PACKAGE DESIGN 599 21.4.1. PLASTIC PACKAGES 600
21.4.2. PLASTIC PACKAGE MODEL 600 21.5. PACKAGE ASSEMBLY 601 21.5.1. DIE
ATTACH 602 21.5.2. DIE WIRE BONDING 603 21.5.3. ASSEMBLY OF CERAMIC
PACKAGES 605 21.5.4. ASSEMBLY OF PLASTIC PACKAGES 606 21.5.5. HERMETIC
SEALING AND ENCAPSULATION 607 21.6. THERMAL CONSIDERATIONS 608 21.7. CAD
TOOLS FOR PACKAGES 609 21.8. POWER AMPLIFIER MODULES 609 REFERENCES 611
PROBLEMS 611 22. TRANSISTOR AND AMPLIFIER MEASUREMENTS 613 22.1.
TRANSISTOR MEASUREMENTS 613 22.1.1. I-V MEASUREMENTS 614 22.1.2.
S-PARAMETER MEASUREMENTS 615 22.1.3. NOISE PARAMETER MEASUREMENTS 619
22.1.4. SOURCE-PULL AND LOAD-PULL MEASUREMENTS 620 22.2. AMPLIFIER
MEASUREMENTS 623 22.2.1. MEASUREMENTS USING RF PROBES 624 22.2.2. DRIVER
AMPLIFIER AND HPA TEST 625 22.2.3. LARGE-SIGNAL OUTPUT VSWR 626 22.2.4.
NOISE FIGURE MEASUREMENTS 626 22.3. DISTORTION MEASUREMENTS 627 22.3.1.
AM-AM AND AM-PM 627 22.3.2. 1***** MEASUREMENT 628 22.3.3. ACPR
MEASUREMENT 629 22.3.4. NPR MEASUREMENT 630 22.3.5. EVM MEASUREMENT 630
XVI CONTENTS 22.4. PHASE NOISE MEASUREMENT 630 22.5. RECOVERY TIME
MEASUREMENT 632 REFERENCES 635 PROBLEMS 636 APPENDIX A. PHYSICAL
CONSTANTS AND OTHER DATA 637 APPENDIX B. UNITS AND SYMBOLS 639 APPENDIX
C. FREQUENCY BAND DESIGNATIONS 641 APPENDIX D. DECIBEL UNITS (DB) 643
APPENDIX E. MATHEMATICAL RELATIONSHIPS 647 APPENDIX F. SMITH CHART 649
APPENDIX G. GRAPHICAL SYMBOLS 651 APPENDIX H. ACRONYMS AND ABBREVIATIONS
653 APPENDIX I. LIST OF SYMBOLS 657 APPENDIX J. MULTIPLE ACCESS AND
MODULATION TECHNIQUES 661 INDEX 663
|
| any_adam_object | 1 |
| author | Bahl, Inder J. |
| author_facet | Bahl, Inder J. |
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| author_sort | Bahl, Inder J. |
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| classification_rvk | ZN 5470 |
| ctrlnum | (OCoLC)244768433 (DE-599)BVBBV035604645 |
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| dewey-search | 621.3815/35 |
| dewey-sort | 3621.3815 235 |
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| discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Book |
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| id | DE-604.BV035604645 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T21:41:28Z |
| institution | BVB |
| isbn | 9780470391662 |
| language | English |
| lccn | 2008049895 |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-017659898 |
| oclc_num | 244768433 |
| open_access_boolean | |
| owner | DE-634 DE-859 DE-29T |
| owner_facet | DE-634 DE-859 DE-29T |
| physical | XXIII, 671 S. Ill., graph. Darst. |
| publishDate | 2009 |
| publishDateSearch | 2009 |
| publishDateSort | 2009 |
| publisher | Wiley |
| record_format | marc |
| spelling | Bahl, Inder J. Verfasser aut Fundamentals of RF and microwave transistor amplifiers Inder Bahl Hoboken, N.J. Wiley 2009 XXIII, 671 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Amplifiers, Radio frequency Microwave amplifiers Transistor amplifiers Mikrowellenverstärker (DE-588)4169901-4 gnd rswk-swf Schaltverstärker (DE-588)4179393-6 gnd rswk-swf Hochfrequenzverstärker (DE-588)4160154-3 gnd rswk-swf Schaltungsentwurf (DE-588)4179389-4 gnd rswk-swf Leistungsverstärker (DE-588)4129735-0 gnd rswk-swf Leistungsverstärker (DE-588)4129735-0 s Mikrowellenverstärker (DE-588)4169901-4 s Hochfrequenzverstärker (DE-588)4160154-3 s Schaltverstärker (DE-588)4179393-6 s Schaltungsentwurf (DE-588)4179389-4 s DE-604 GBV Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=017659898&sequence=000003&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Bahl, Inder J. Fundamentals of RF and microwave transistor amplifiers Amplifiers, Radio frequency Microwave amplifiers Transistor amplifiers Mikrowellenverstärker (DE-588)4169901-4 gnd Schaltverstärker (DE-588)4179393-6 gnd Hochfrequenzverstärker (DE-588)4160154-3 gnd Schaltungsentwurf (DE-588)4179389-4 gnd Leistungsverstärker (DE-588)4129735-0 gnd |
| subject_GND | (DE-588)4169901-4 (DE-588)4179393-6 (DE-588)4160154-3 (DE-588)4179389-4 (DE-588)4129735-0 |
| title | Fundamentals of RF and microwave transistor amplifiers |
| title_auth | Fundamentals of RF and microwave transistor amplifiers |
| title_exact_search | Fundamentals of RF and microwave transistor amplifiers |
| title_full | Fundamentals of RF and microwave transistor amplifiers Inder Bahl |
| title_fullStr | Fundamentals of RF and microwave transistor amplifiers Inder Bahl |
| title_full_unstemmed | Fundamentals of RF and microwave transistor amplifiers Inder Bahl |
| title_short | Fundamentals of RF and microwave transistor amplifiers |
| title_sort | fundamentals of rf and microwave transistor amplifiers |
| topic | Amplifiers, Radio frequency Microwave amplifiers Transistor amplifiers Mikrowellenverstärker (DE-588)4169901-4 gnd Schaltverstärker (DE-588)4179393-6 gnd Hochfrequenzverstärker (DE-588)4160154-3 gnd Schaltungsentwurf (DE-588)4179389-4 gnd Leistungsverstärker (DE-588)4129735-0 gnd |
| topic_facet | Amplifiers, Radio frequency Microwave amplifiers Transistor amplifiers Mikrowellenverstärker Schaltverstärker Hochfrequenzverstärker Schaltungsentwurf Leistungsverstärker |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=017659898&sequence=000003&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| work_keys_str_mv | AT bahlinderj fundamentalsofrfandmicrowavetransistoramplifiers |