Properties of semiconductor alloys: group-IV, III-V and II-VI semiconductors
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| Format: | Buch |
| Sprache: | English |
| Veröffentlicht: |
Chichester
Wiley
2009
|
| Schriftenreihe: | Wiley series in materials for electronic & optoelectronic applications
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| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | XXII, 400 S. Ill., graph. Darst. |
| ISBN: | 9780470743690 |
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| 020 | |a 9780470743690 |9 978-0-470-74369-0 | ||
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| 084 | |a ZN 4800 |0 (DE-625)157408: |2 rvk | ||
| 100 | 1 | |a Adachi, Sadao |e Verfasser |4 aut | |
| 245 | 1 | 0 | |a Properties of semiconductor alloys |b group-IV, III-V and II-VI semiconductors |c Sadao Adachi |
| 264 | 1 | |a Chichester |b Wiley |c 2009 | |
| 300 | |a XXII, 400 S. |b Ill., graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 490 | 0 | |a Wiley series in materials for electronic & optoelectronic applications | |
| 650 | 4 | |a Semiconductors |x Materials | |
| 650 | 4 | |a Semiconductors |x Analysis | |
| 650 | 4 | |a Silicon alloys | |
| 650 | 0 | 7 | |a Zwei-Sechs-Halbleiter |0 (DE-588)4191263-9 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Drei-Fünf-Halbleiter |0 (DE-588)4150649-2 |2 gnd |9 rswk-swf |
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| 856 | 4 | 2 | |m Digitalisierung UB Bayreuth |q application/pdf |u http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=017162304&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |3 Inhaltsverzeichnis |
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Datensatz im Suchindex
| _version_ | 1804138683080638464 |
|---|---|
| adam_text | Contents
Seríes
Preface
xvii
Preface
xix
Abbreviations and Acronyms
xxi
Introductory Remarks
1
A.1 An Alloy and a Compound
1
A.2
Grimm-Sommerfeld
Rule
2
A.3 An Interpolation Scheme
4
References
7
1
Structural Properties
9
1.1
Ionicity
9
1.2
Elemental
Isotopie
Abundance and Molecular Weight
9
1.3
Crystal Structure
11
1.3.1
Random Alloy
11
1.3.2
Spontaneous Ordering
11
(a) Group-IV Semiconductor Alloy
11
(b) III-V Semiconductor Alloy
14
(c) II-VI Semiconductor Alloy
15
1.4
Lattice Constant and Related Parameters
15
1.4.1
CuAu Alloy: Ordered and Disordered States
15
1.4.2
Non-alloyed Semiconductor
16
1.4.3
Semiconductor Alloy
19
(a) Group-IV Semiconductor
19
(b)
Ш
-V
Semiconductor
22
(c) II-VI Semiconductor
29
1.5
Coherent Epitaxy and Strain Problem
32
1.5.1
Bilayer Model
32
1.5.2
Elastic Strain and Lattice Deformation
33
1.5.3
Critical Thickness
37
1.6
Structural Phase Transition
39
1.7
Cleavage Plane
41
1.7.1
Cleavage
41
1.7.2
Surface Energy
41
References
42
vi
CONTENTS
2
Thermal
Properties
45
2.1
Melting Point and Related Parameters
45
2.1.1
Phase Diagram
45
(a) Group-IV Semiconductor Alloy
45
(b)
ПІ
-V
Semiconductor Alloy
45
(c)
П
-VI
Semiconductor Alloy
48
2.1.2
Melting Point
51
2.2
Specific Heat
51
2.2.1
Group-IV Semiconductor Alloy
51
2.2.2
ПІ
-V
Semiconductor Alloy
54
2.2.3
П
-VI
Semiconductor Alloy
56
2.3
Debye Temperature
56
2.3.1
General Considerations
56
2.3.2
Group-IV Semiconductor Alloy
57
2.3.3
ΙΠ
-V
Semiconductor Alloy
58
2.3.4
П
-VI
Semiconductor Alloy
58
2.4
Thermal Expansion Coefficient
59
2.4.1
Group-IV Semiconductor Alloy
59
2.4.2
ΙΠ
-V
Semiconductor Alloy
61
2.4.3
П
-VI
Semiconductor Alloy
63
2.5
Thermal Conductivity and Difrusivity
63
2.5.1
Thermal Conductivity
63
(a) General Considerations
63
(b) Group-IV Semiconductor Alloy
66
(c)
ΙΠ
-V
Semiconductor Alloy
68
(d)
П
-VI
Semiconductor Alloy
74
2.5.2
Thermal Difrusivity
75
(a) General Considerations
75
(b) Alloy Value
75
References
76
3
Elastic Properties
81
3.1
Elastic Constant
81
3.1.1
General Considerations
81
3.1.2
Room-temperature Value
81
(a) Group-IV Semiconductor Alloy
81
(b)
Ш
-V
Semiconductor Alloy
81
(c)
П
-VI
Semiconductor Alloy
84
3.1.3
External Perturbation Effect
86
(a) Temperature Effect
86
(b) Pressure Effect
88
3.2
Third-order Elastic Constant
89
3.3
Young s Modulus, Poisson s Ratio and Similar Properties
89
3.3.1
Group-IV Semiconductor Alloy
89
3.3.2
Ш
-V
Semiconductor Alloy
89
3.3.3
П
-VI
Semiconductor Alloy
90
CONTENTS vü
3.4 Microhardness 92
3.4.1 Group-IV Semiconductor
Alloy
92
3.4.2
ПІ
-V
Semiconductor
Alloy
92
3.4.3 II-VI Semiconductor
Alloy
93
3.5 Sound Velocity 96
References
97
4 Lattice Dynamic
Properties
99
4.1 Phonon Dispersion
Relationships
99
4.2 Phonon
Frequency
99
4.2.1 General
Considerations
99
4.2.2
Room-temperature Value
100
(a) Group-IV Semiconductor Alloy
100
(b)
ПІ
-V
Semiconductor Alloy
104
(c) II-VI Semiconductor Alloy
109
4.2.3
External Perturbation Effect
112
(a) Group-IV Semiconductor Alloy
112
(b)
ПІ
-V
Semiconductor Alloy
113
(c) II-VI Semiconductor Alloy
115
4.3
Mode
Grüneisen
Parameter
119
4.3.1
Phonon Deformation Potential
121
References
123
5
Collective Effects and Some Response Characteristics
125
5.1
Piezoelectric Constant
125
5.1.1
General Considerations
125
5.1.2
Alloy Value
125
5.2 Fröhlich
Coupling Constant
129
5.2.1
General Considerations
129
5.2.2
Alloy Value
129
References
131
6
Energy-band Structure: Energy-band Gaps
133
6.1
Introductory Remarks
133
6.1.1
Quasi-cubic Band Model
133
6.1.2
Bowing Parameter
136
6.1.3
Ordered Alloy
136
6.2
Group-IV Semiconductor Alloy
139
6.2.1
Binary Alloy
139
(a) CSi
139
(b) CGe
140
(c) SiGe
141
(d) GeSn
144
6.2.2
Ternary Alloy
145
(a) CSiGe
145
(b) SiGeSn
147
6.2.3
Summary
147
viii
CONTENTS
ПІ
-V
Semiconductor
Ternary Alloy
6.3.1
(III,
HI)-N Alloy
(a)
c-AlGaN
(b)
w-AlGaN
(с)
c-AlInN
(d)
w-AlInN
(e)
c-GalnN
(f)
w-GalnN
6.3.2
(Ш,
Ш)-Р
Alloy
(a)
AlGaP
(b)
AllnP
(с)
GalnP
6.3.3
(ΠΙ,
Ш)-Аѕ
Alloy
(а)
AlGaAs
(b)
AlInAs
(с)
GalnAs
6.3.4
(ΠΙ,
ІЩ
-Sb
Alloy
(а)
AlGaSb
(b)
AllnSb
(с)
GalnSb
6.3.5
Dilute-nitride
m-ÇV,
V) Alloy
(a)
General Considerations
(b)
GaNP
(с)
GaNAs
(d)
GaNSb
(e)
InNP
(f)
InNAs
(g)
InNSb
6.3.6
AHV
V) Alloy
6.3.7
Ga¬
(V, V) Alloy
ia)
GaPAs
(b)
GaPSb
(с)
GaAsSb
6.3.8
In-íV,
V) Alloy
(a)
InPAs
(b)
InPSb
(с)
InAsSb
6.3.9
Summary
m-v
Semiconductor Quaternary Alloy
6.4.1
Dilute-nitride Quaternary Alloy
(a)
AlGaNAs
(b)
GalnNP
(c)
GalnNAs
(d)
GaNPAs
6.4.2
(Ш,
niHV, V) Alloy
(a)
AlGaPAs
(b)
AlGaAsSb
6.3
ПІ
-V
Semiconductor Ternary Alloy
149
149
149
150
152
152
152
152
153
153
153
155
157
157
160
161
163
163
165
166
166
166
170
171
172
173
173
174
174
175
175
176
178
179
179
179
181
183
6.4
Ш
-V
Semiconductor Quaternary Alloy
184
184
184
185
185
185
186
186
187
CONTENTS
ix
(с)
AlInAsSb
188
(d) GalnPAs
189
(e) GalnAsSb
191
6.4.3
(III,
Ш,
ΠΙ)-ν
Alloy
193
(a) AlGalnP
193
(b) AlGalnAs
194
6.4.4
in-(V,
V, V) Alloy
195
6.4.5
Summary
196
6.5
II-VI
Semiconductor Alloy
197
6.5.1
(II, II)-O Ternary Alloy
197
(a) BeZnO
197
(b) MgZnO
197
(c) ZnCdO
198
6.5.2
(II, IlbS Ternary Alloy
198
(a) MgZnS
198
(b) ZnCdS
200
(c) ZnHgS
200
(d) CdHgS
200
6.5.3
(II, IlbSe Ternary Alloy
201
(a) BeZnSe
201
(b) BeCdSe
202
(c) MgZnSe
202
(d) MgCdSe
202
(e) ZnCdSe
203
(f) CdHgSe
203
6.5.4
(II, II)-Te Ternary Alloy
204
(a) BeZnTe
204
(b) MgZnTe
205
(c) MgCdTe
206
(d) ZnCdTe
206
(e) ZnHgTe
207
(f) CdHgTe
208
6.5.5
Zn-ÍVI,
VI) Ternary Alloy
208
(a) ZnOS
208
(b) ZnOSe
209
(c) ZnSSe
209
(d) ZnSTe
210
(e) ZnSeTe
210
6.5.6
Cd-(VI, VI) Ternary Alloy
210
(a) CdSSe
210
(b) CdSTe
211
(c) CdSeTe
211
6.5.7
(Π,
IIHVI, VI) Quaternary Alloy
212
(a) MgZnSSe
212
(b) MgZnSeTe
213
6.5.8
(Π,
II, n)-VI Quaternary Alloy
213
(a) BeMgZnSe
213
CONTENTS
(b) BeZnCdSe
(c) MgZnCdSe
6.5.9
Summary
References
Energy-band Structure: Effective Masses
7.1
Introductory Remarks
7.1.1
Electron Effective Mass
7.1.2
Hole Effective Mass
7.1.3
Interpolation Scheme
7.2
Group-IV Semiconductor Alloy
7.2.1
CSi Binary Alloy
7.2.2
SiGe Binary Alloy
7.3
ПІ
-V
Semiconductor Ternary Alloy
7.3.1
(III,
ΠΙ)-Ν
Alloy
7.3.2
(Ш,Ш)-Р
Alloy
7.3.3
(Ш,
IIIbAs Alloy
(a) AlGaAs
(b) AlInAs
(c) GalnAs
7.3.4
(Ш,
IID-Sb Alloy
7.3.5
Dilute-nitride
ΠΗΥ
V) Alloy
(a) Ga-W, V) Alloy
(b) In-(N, V) Alloy
7.3.6
Al-CV, V) Alloy
7.3.7
Ga4V, V) Alloy
(a) GaPAs
(b) GaAsSb
7.3.8
In-CV, V) Alloy
(a) InPAs
(b) InAsSb
7.4
m-v
Semiconductor Quaternary Alloy
7.4.1
Dilute-nitride Quaternary Alloy
7.4.2
(Ш, ШМЧ
V) Alloy
(a) GalnPAs
(b) GalnAsSb
7.4.3
(Ш, Ш,
ΙΠ)-ν
Alloy
(a) AlGalnP
(b) AlGalnAs
7.4.4
ПНУ,
V, V) Alloy
7.5
H-VI
Semiconductor Alloy
7.5.1
(Π,
ПУ-Щ
Ternary Alloy
7.5.2
n-iVI, VI) Ternary Alloy
7.5.3
(Π,
IIMVI, VI) Quaternary Alloy
7.6
Concluding Remarks
7.6.1
Composition Dependence
7.6.2
External Perturbation Effect
References
213
214
214
216
229
229
229
230
232
234
234
237
238
238
238
239
239
241
241
242
243
243
244
245
245
245
246
246
246
247
248
248
248
248
249
250
250
250
250
251
251
253
253
254
254
254
256
CONTENTS xi
8 Deformation Potentials 259
8.1 Intravalley Deformation Potential:
Γ
Point 259
8.1.1 Group-IV
Semiconductor
Alloy
259
8.1.2
ΙΠ
-V
Semiconductor Ternary Alloy
261
(a) AlGaN
261
(b) GalnN
262
(c) AllnP
262
(d) GalnP
263
(e) AlGaAs
263
(f) AlInAs
264
(g) GalnAs
265
(h) GaNAs
265
(i) GaPAs
266
8.1.3
III-V Semiconductor Quaternary Alloy
266
8.1.4
II-VI Semiconductor Alloy
266
8.2
Intravalley Deformation Potential: High-symmetry
Points
267
8.2.1
Group-IV Semiconductor Alloy
267
8.2.2
ПІ
-V
Semiconductor Alloy
269
8.2.3
II-VI Semiconductor Alloy
270
8.3
Intervalley Deformation Potential
270
8.3.1
Group-IV Semiconductor Alloy
270
8.3.2
ПІ
-V
Semiconductor Alloy
271
8.3.3
П
-VI
Semiconductor Alloy
272
References
272
9
Heterojunction Band Offsets and Schottky Barrier
Height
275
9.1
Heterojunction Band Offsets
275
9.1.1
General Considerations
275
9.1.2
Group-IV Semiconductor Heterostructure System
275
(a) CSi/Si
275
(b) SiGe/Si
276
(c) CSiGe/Si
276
(d) CSi/SiGe
277
9.1.3
ПІ
-V
Semiconductor Heterostructure System:
Lattice-matched Ternary-alloy System
277
(a) GalnP/GaAs
277
(b) GalnP/AlInP
277
(c) GalnP/AlGaAs
278
(d) AlGaAs/GaAs
278
(e) AlInAs/InP
279
(f) GalnAs/InP
279
(g) GalnAs/AlInAs
280
(h) InAsSb/GaSb
280
9.1.4
Ш
-V
Semiconductor Heterostructure System:
Lattice-matched Quaternary Alloy
280
(a) GalnPAs/InP
280
ні
CONTENTS
(b) AlGaAsSb/GaSb
281
(c)
AlGaAsSMInP
281
(d)
AlGaAsSbflnAs
281
(e)
GalnAsSb/GaSb 281
(f)
GalnAsSMInP
281
(g)
GalnAsSb/InAs 281
(h) AlGaAsSb/GalnAsSb
282
(i) AlInAsSb/GalnAsSb
282
(j) AlGalnP/AlInP
282
(k) AlGalnP/GalnP
282
(1)
AlGalnAs/GalnAs
283
9.1.5
ΙΠ
-V
Semiconductor Heterostructure System:
Lattice-mismatched Alloy
System
283
(a) w-AlGaN/w-GaN
283
(b) w-AHnN/w-InN
284
(c) w-GalnN/w-GaN
284
(d) GalnAs/GaAs
284
(e) Dilute-nitride-based Heterostructure System
286
9.1.6
II-VI Semiconductor Heterostructure System
287
(a)
(П,
Щ-О
-based
Heterostructure System
287
(b)
(П,
HbS-based Heterostructure System
287
(c) (П,
IlbSe-based Heterostructure System
287
(d)
(II,
IlbTe-based Heterostructure System
288
(e) Zn-(VI, VI)-based Heterostructure System
289
(f)
(II, nbVI-based and
H-fVI,
VI)-based Heterostructure
Systems
289
(g)
(II,
HHVI, VD-based Heterostructure System
289
(h)
(П, П,
ID-VI-based Heterostructure System
289
9.2
Schottky
Barrier Height
289
9.2.1
General
Considerations
289
9.2.2
Group-rV Semiconductor
Alloy
290
(a) SiGe
Binary Alloy
290
(b) CSiGe
Ternary Alloy
291
9.2.3
ΙΠ
-V
Semiconductor Ternary Alloy
291
(a) (Ш,
HI)-N Alloy
291
(b)
(Ш,Ш)-Р
Alloy
292
(c)
(Ш,
Ш)-Аѕ
Alloy
292
(d)
(Ш,
my-Sb Alloy
294
(e) Ga-íV,
V) Alloy
295
9.2.4
ΙΠ
-V
Semiconductor Quaternary Alloy
2%
(a) (Ш,
ШИХ
V) Alloy
2%
(b)
(Ш, Ш,
ΙΠ)-ν
Alloy
297
9.2.5
П
-VI
Semiconductor Alloy
299
(a)
(Π,
ПЬТе
Ternary Alloy
299
(b) ZiHVI, VI) Ternary Alloy
300
References
300
CONTENTS
хні
10
Optical Properties
307
10.1
Introductory Remarks
307
10.1.1
Optical Dispersion Relations
307
10.1.2
Static and High-frequency Dielectric Constants
308
10.2
Group-IV Semiconductor Alloy
308
10.2.1
Binary Alloy
308
(a) CSi
308
(b) CGe
309
(c) SiGe
309
(d) GeSn
310
10.2.2
Ternary Alloy
311
10.3
ΙΠ
-V
Semiconductor Ternary Alloy
311
10.3.1
(III, III)-N Alloy
311
(a) c-(IH, IIIbN Alloy
311
(b) w-AlGaN
312
(c) w-AlInN
313
(d) w-GalnN
313
10.3.2
(III, III)-P Alloy
314
(a) AlGaP
314
(b) AllnP
314
(c) GalnP
315
10.3.3
(Ш,
III)-As Alloy
316
(a) AlGaAs
316
(b) AlInAs
316
(c) GalnAs
318
10.3.4
(Ш,
m)-Sb Alloy
319
(a) AlGaSb
319
(b) GalnSb
319
10.3.5
Dilute-nitride
Ш-(У,
V) Alloy
320
(a) GaNP
320
(b) GaNAs
321
(c) GaNSb
321
(d) InNP
322
(e) InNAs
322
10.3.6
AHV, V) Alloy
322
10.3.7
Ga-(V, V) Alloy
323
(a) GaPAs
323
(b) GaPSb
324
(c) GaAsSb
324
10.3.8
In-(V, V) Alloy
324
(a) InPAs
324
(b) InPSb
325
(c) InAsSb
325
10.4
Ш
-V
Semiconductor Quaternary Alloy
326
10.4.1
Dilute-nitride Quaternary Alloy
326
(a) GalnNP
326
(b) GalnNAs
326
xiv CONTENTS
10.4.2
(III, IHHV,
V) Alloy
326
(a) AlGaPAs
326
(b) AlGaAsSb
327
(c) GalnPAs
327
(d) GalnAsSb
328
10.4.3
(ΠΙ, ΙΠ, ΠΙ)-ν
Alloy
330
(a) AlGalnP
330
(b) AlGalnAs
331
10.4.4
IIHV, V, V) Alloy
332
10.5
П
-VI
Semiconductor Alloy
332
10.5.1
(П, Щ-О
Ternary Alloy
332
(a) BeZnO
332
(b) MgZnO
332
(c) ZnCdO
333
10.5.2
(П,
lïy-S
Ternary Alloy
333
(a) MgZnS
333
(b) ZnCdS
334
10.5.3
(П,
II)-Se Ternary Alloy
335
(a) BeZnSe
335
(b) BeCdSe
335
(c) MgZnSe
335
(d) MgCdSe
337
(e) ZnCdSe
337
(f) CdHgSe
338
10.5.4
(П, П)-Те
Ternary Alloy
339
(a) BeZnTe
339
(b) MgZnTe
339
(c) MgCdTe
340
(d) ZnCdTe
340
(e) ZnHgTe
342
(f) CdHgTe
342
10.5.5
ZrKVI, VI) Ternary Alloy
343
(a) ZnOS
343
(b) ZnSSe
343
(c) ZnSTe
343
(d) ZnSeTe
344
10.5.6
Cd-CVI, VI) Ternary Alloy
344
(a) CdSSe
344
(b) CdSTe
345
(c) CdSeTe
346
10.5.7
(П,
IIHVI, VI) Quaternary Alloy
346
(a) MgZnSSe
346
(b) MgZnSeTe
346
10.5.8
(Π, Π,
Щ
-VI
Quaternary Alloy
346
(a) BeMgZnSe
346
(b) BeZnCdSe
346
(c) MgZnCdSe
346
References
347
CONTENTS xv
11 Elasto-optic,
Electr
o-optic and Nonlinear Optical
Properties
357
11.1 Elasto-optic
Effect
357
11.1.1 Group-IV
Semiconductor Alloy
357
11.1.2 III-V
Semiconductor Alloy
357
11.1.3
II-VI Semiconductor Alloy
357
11.2
Linear Electro-optic Constant
358
11.2.1
Group-IV Semiconductor Alloy
358
11.2.2 III-V
Semiconductor Alloy
358
11.2.3
II-VI Semiconductor Alloy
358
11.3
Quadratic Electro-optic Constant
360
11.3.1
Group-IV Semiconductor Alloy
360
11.3.2
III-V Semiconductor Alloy
360
11.3.3
П
-VI
Semiconductor Alloy
360
11.4
Franz-Keldysh Effect
360
11.4.1
Group-IV Semiconductor Alloy
360
11.4.2
III-V Semiconductor Alloy
360
11.4.3
П
-VI
Semiconductor Alloy
360
11.5
Nonlinear Optical Constant
361
11.5.1
Group-IV Semiconductor Alloy
361
11.5.2
III-V Semiconductor Alloy
361
11.5.3
II-VI Semiconductor Alloy
362
References
362
12
Carrier
Iransport
Properties
365
12.1
Introductory Remarks
365
12.2
Low-field Mobility
367
12.2.1
Group-IV Semiconductor Alloy
367
(a) CSi Binary Alloy
367
(b) SiGe Binary Alloy
367
12.2.2
III-V Semiconductor Ternary Alloy
368
(a) (III,
ΙΠ)-Ν
Alloy
368
(b)
(Ш, Ш)-Р
Alloy
369
(c) (III,
Ш)-Аѕ
Alloy
369
(d) (III, III)-Sb Alloy
369
(e) Dilute-nitride IIHV, V) Alloy
371
(f) Ga-CV, V) Alloy
371
(g) In-iV, V) Alloy
371
12.2.3
III-V Semiconductor Quaternary Alloy
371
(a) Dilute-nitride Alloy
371
(b)
(ΙΠ,
IIIMV, V) Alloy
372
(c)
(ΙΠ, ΠΙ,
HI)-V Alloy
373
12.2.4
П
-VI
Semiconductor Alloy
374
(a) (II,
ПУ-О
Ternary Alloy
374
(b)
(Π,
П)-Ѕе
Ternary Alloy
374
(c)
(П, ПУ-Те
Ternary Alloy
375
(d) Zn-(V, V) Ternary Alloy
376
xvi CONTENTS
12.3
High-field
Transport 376
12.3.1 Group-IV
Semiconductor Alloy
376
12.3.2
Ш
-V
Semiconductor Ternary Alloy
376
(a) (Ш,
UlbN Alloy
376
(b)
(Ш,Ш)-Р
Alloy
376
(c) (III, mbAs Alloy
377
(d) Dilute-nitride IIHV, V) Alloy
378
12.3.3
Ш
-V
Semiconductor Quaternary Alloy
378
12.3.4
II-VI Semiconductor Alloy
379
12.4
Minority-carrier Transport
379
12.4.1
Group-IV Semiconductor Alloy
379
(a) SiGe Binary Alloy
379
(b) CSiGe Ternary Alloy
380
12.4.2
Ш
-V
Semiconductor Ternary Alloy
380
(a) (III,
ІЩ
-N
Alloy
380
(b)
(Ш, Ш)-Аѕ
Alloy
380
(c) Ga-(V, V) Alloy
381
12.4.3
Ш
-V
Semiconductor Quaternary Alloy
381
(a) (III,
ШНУ,
V) Alloy
381
(b)
(ΠΙ,
III,
ΙΠ)-ν
Alloy
382
12.4.4
II-VI Semiconductor Alloy
382
12.5
Impact Ionization Coefficient
382
12.5.1
Group-IV Semiconductor Alloy
382
12.5.2
Ш
-V
Semiconductor Ternary Alloy
382
(a) (HI,
ΙΠ)-Ν
Alloy
382
(b)
(Ш,ШЬР
Alloy
383
(c) (HI,
ІЩ
-As
Alloy
383
(d) (HI, HlbSb Alloy
384
(e) Dilute-nitride HI-(V, V) Alloy
384
(f) Ga-(V, V) Alloy
385
(g)
Іп-ЧУ
V) Alloy
385
12.5.3
Ш
-V
Semiconductor Quaternary Alloy
385
(a) (ПІ, ШНЧ
V) Alloy
385
(b)
(ПІ, Ш,
IH)-V Alloy
385
12.5.4
II-VI Semiconductor Alloy
386
References
386
Index
391
|
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| callnumber-subject | TK - Electrical and Nuclear Engineering |
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| dewey-full | 621.3815/2 |
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| dewey-ones | 621 - Applied physics |
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| dewey-search | 621.3815/2 |
| dewey-sort | 3621.3815 12 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Physik Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Book |
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| id | DE-604.BV035358265 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T21:32:04Z |
| institution | BVB |
| isbn | 9780470743690 |
| language | English |
| lccn | 2008046980 |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-017162304 |
| oclc_num | 268957354 |
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| owner | DE-703 DE-29T DE-1050 DE-83 DE-355 DE-BY-UBR |
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| physical | XXII, 400 S. Ill., graph. Darst. |
| publishDate | 2009 |
| publishDateSearch | 2009 |
| publishDateSort | 2009 |
| publisher | Wiley |
| record_format | marc |
| series2 | Wiley series in materials for electronic & optoelectronic applications |
| spelling | Adachi, Sadao Verfasser aut Properties of semiconductor alloys group-IV, III-V and II-VI semiconductors Sadao Adachi Chichester Wiley 2009 XXII, 400 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Wiley series in materials for electronic & optoelectronic applications Semiconductors Materials Semiconductors Analysis Silicon alloys Zwei-Sechs-Halbleiter (DE-588)4191263-9 gnd rswk-swf Drei-Fünf-Halbleiter (DE-588)4150649-2 gnd rswk-swf Zwei-Sechs-Halbleiter (DE-588)4191263-9 s DE-604 Drei-Fünf-Halbleiter (DE-588)4150649-2 s Digitalisierung UB Bayreuth application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=017162304&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Adachi, Sadao Properties of semiconductor alloys group-IV, III-V and II-VI semiconductors Semiconductors Materials Semiconductors Analysis Silicon alloys Zwei-Sechs-Halbleiter (DE-588)4191263-9 gnd Drei-Fünf-Halbleiter (DE-588)4150649-2 gnd |
| subject_GND | (DE-588)4191263-9 (DE-588)4150649-2 |
| title | Properties of semiconductor alloys group-IV, III-V and II-VI semiconductors |
| title_auth | Properties of semiconductor alloys group-IV, III-V and II-VI semiconductors |
| title_exact_search | Properties of semiconductor alloys group-IV, III-V and II-VI semiconductors |
| title_full | Properties of semiconductor alloys group-IV, III-V and II-VI semiconductors Sadao Adachi |
| title_fullStr | Properties of semiconductor alloys group-IV, III-V and II-VI semiconductors Sadao Adachi |
| title_full_unstemmed | Properties of semiconductor alloys group-IV, III-V and II-VI semiconductors Sadao Adachi |
| title_short | Properties of semiconductor alloys |
| title_sort | properties of semiconductor alloys group iv iii v and ii vi semiconductors |
| title_sub | group-IV, III-V and II-VI semiconductors |
| topic | Semiconductors Materials Semiconductors Analysis Silicon alloys Zwei-Sechs-Halbleiter (DE-588)4191263-9 gnd Drei-Fünf-Halbleiter (DE-588)4150649-2 gnd |
| topic_facet | Semiconductors Materials Semiconductors Analysis Silicon alloys Zwei-Sechs-Halbleiter Drei-Fünf-Halbleiter |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=017162304&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
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