Oxide and nitride semiconductors: processing, properties and applications
Gespeichert in:
| Format: | Buch |
|---|---|
| Sprache: | English |
| Veröffentlicht: |
Berlin [u.a.]
Springer
2009
|
| Schriftenreihe: | Advances in materials research
12 |
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | XIV, 517 S. Ill., graph. Darst. |
| ISBN: | 9783540888468 |
Internformat
MARC
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| 245 | 1 | 0 | |a Oxide and nitride semiconductors |b processing, properties and applications |c Takafumi Yao ; Soon-Ku Hong (eds.) |
| 264 | 1 | |a Berlin [u.a.] |b Springer |c 2009 | |
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| 650 | 4 | |a Gallium nitride |x Electric properties | |
| 650 | 4 | |a Metal oxide semiconductors | |
| 650 | 4 | |a Zinc oxide |x Electric properties | |
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Datensatz im Suchindex
| _version_ | 1804138659724656640 |
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| adam_text | CONTENTS PREFACE V 1 BASIC PROPERTIES OF ZNO, GAN, AND RELATED MATERIALS
T. HANADA 1 1.1 INTRODUCTION 1 1.2 CRYSTAL STRUCTURE 1 1.2.1 CRYSTAL
STRUCTURE OF RELATED MATERIALS 1 1.2.2 HEXAGONAL LATTICE VECTORS AND
PLANES 4 1.3 ELASTIC STRAHL 6 1.3.1 ELASTIC CONSTANTS AND ELASTIC ENERGY
DENSITY 6 1.3.2 STRAIN IN HEXAGONAL- AND CUBIC-STRUCTURE FILMS 8 1.4
ELECTRONIC STRUCTURE 10 1.4.1 BANDGAP AND BAND-EDGE ELECTRONIC STRUCTURE
10 1.4.2 BIR-PIKUS HAMILTONIAN 12 1.4.3 VALENCE BAND-EDGE AND BANDGAP OF
STRAINED ZNO 15 1.4.4 EXCITON BINDING ENERGY 17 REFERENCES 18 2
SOLVOTHERMAL GROWTH OF ZNO AND GAN D. EHRENTRAUT, F. ORITO, Y. MIKAWA,
AND T. FUKUDA 21 2.1 INTRODUCTION 21 2.2 HYDROTHERMAL GROWTH 23 2.2.1
HYDROTHERMAL GROWTH TECHNOLOGY FOR ZNO 23 2.2.2 GROWTH MECHANISM 28
2.2.3 LIQUID PHASE EPITAXY AND GROWTH OF MICROCRYSTALS 30 2.2.4
PROPERTIES OF HYDROTHERMAL ZNO 32 2.2.5 FUTURE DEVELOPMENTS 46 2.3
AMMONOTHERMAL GROWTH 47 2.3.1 A BRIEF REVIEW OF THE GROWTH OF GAN BULK
CRYSTALS 47 2.3.2 AMMONOTHERMAL GROWTH TECHNOLOGY FOR GAN 48
BIBLIOGRAFISCHE INFORMATIONEN HTTP://D-NB.INFO/990586960 DIGITALISIERT
DURCH VIII CONTENTS 2.3.3 PROPERTIES OF AMMONOTHERMAL GAN 54 2.3.4
PROSPECTS FOR AMMONOTHERMAL GAN 60 REFERENCES 62 3 GROWTH OF ZNO AND GAN
FILMS J. CHANG, S.-K. HONG, K. MATSUMOTO, H. TOKUNAGA, A. TACHIBANA,
S.W. LEE, AND M.-W. CHO 67 3.1 MBE AND PLD OF ZNO AND RELATED MATERIALS
67 J. CHANG AND S.-K. HONG 67 3.1.1 INTRODUCTION 67 3.1.2 GENERAL
FEATURES OF THE PAMBE 68 3.1.3 PAMBE OF ZNO THIN FILMS ON VARIOUS
SUBSTRATES 71 3.1.4 OTHER GROWTH FACTORS IN PAMBE OF ZNO AND THEIR
PROPERTIES 84 3.1.5 BANDGAP ENGINEERING OF ZNO-BASED ALLOYS GROWN BY
PAMBE 101 3.1.6 GENERAL FEATURES OF THE PLD 112 3.1.7 DROPLET FORMATION
IN THE PLD PROCESS 113 3.1.8 GROWTH OF ZNO THIN FILMS ON VARIOUS
SUBSTRATES BY PLD 114 3.1.9 BANDGAP ENGINEERING OF ZNO-BASED ALLOYS
GROWN BY PLD 124 3.2 MOCVD GROWTH OF GAN AND RELATED MATERIALS 130 K.
MATSUMOTO, H. TOKUNAGA, AND A. TACHIBANA 130 3.2.1 INTRODUCTION 130
3.2.2 HETEROEPITAXY OF GAN AND ALLOYS: MATERIALS PROPERTY AND GROWTH
CONDITION 130 3.2.3 REACTION MECHANISM: EXPERIMENTS AND THEORY 140 3.2.4
GROWTH EQUIPMENT 146 3.2.5 ATMOSPHERIC PRESSURE REACTOR FOR NITRIDE 149
3.3 HVPE OF GAN AND RELATED MATERIALS 156 S.W. LEE AND M.-W. CHO 156
3.3.1 INTRODUCTION 156 3.3. CONTENTS IX 4.4 DETERMINATION OF POLARITY
191 4.4.1 DETERMINATION BASED ON DIFFRACTION 192 4.4.2 DETERMINATION
BASED ON SPECTROSCOPY 195 4.4.3 DETERMINATION BASED ON MICROSCOPY 198
4.4.4 DETERMINATION BASED ON DIFFERENCES IN ETCHING AND GROWTH RATES 201
4.5 CONTROL OF POLARITY 205 4.5.1 POLARITY CONTROL OF GAN FILMS 205
4.5.2 POLARITY CONTROL OF ZNO FILMS 207 4.5.3 POLARITY OF A1N AND INN
FILMS 210 4.6 EFFECTS OF POLARITY ON MATERIAL PROPERTIES 211 4.7 DEVICE
APPLICATIONS OF POLARIZATION INDUCED PROPERTIES 213 4.7.1 ELECTRONIC
DEVICES 214 4.7.2 NONLINEAR OPTICAL DEVICES 216 REFERENCES 218 5 GROWTH
OF NONPOLAR GAN AND ZNO FILMS S.-K. HONG AND H.-J. LEE 225 5.1
INTRODUCTION 225 5.2 POLAR SURFACE, NONPOLAR SURFACE, AND
HETEROSTRUCTURES 226 5.3 GROWTH OF NONPOLAR GAN FILMS 229 5.3.1 M-PLANE
GAN FILMS 229 5.3.2 A-PLANE GAN FILMS 233 5.3.3 SEMIPOLAR GAN FILMS 238
5.4 LATERAL EPITAXIAL OVERGROWTH OF NONPOLAR GAN FILMS 239 5.4.1 LEO OF
A-PLANE GAN 239 5.4.2 LEO OF M-PLANE GAN 245 5.5 GROWTH OF NONPOLAR ZNO
FILMS 247 5.5.1 A-PLANE ZNO FILMS 247 5.5.2 M-PLANE ZNO FILMS 254
REFERENCES 258 6 STRUCTURAL DEFECTS IN GAN AND ZNO S.-K. HONG AND H.K.
CHO 261 6.1 INTRODUCTION 261 6.2 DISLOCATION AND STACKING FAULTS 262
6.2. X CONTENTS 6.3.4 MISFIT DISLOCATION 277 6.3.5 NANOPIPE 281 6.3.6
STACKING FAULT 281 6.3.7 INVERSION DOMAIN BOUNDARY 285 6.4 DISLOCATION
REDUCTION OF EPITAXIAL FILMS BY PROCESS 286 6.4.1 DEFECTS IN EPITAXIAL
LATERAL OVERGROWTH (ELOG) 286 6.4.2 DEFECTS IN PENDEO EPITAXY (PE) 293
6.4.3 DEFECTS IN FACET-CONTROLLED EPITAXIAL LATERAL OVERGROWTH (FACELO)
297 6.4.4 DEFECTS IN OTHER OVERGROWTH TECHNIQUES 299 6.4.5 OTHER GROWTH
AND PROCESS TECHNIQUES FOR DEFECT REDUCTION 302 REFERENCES 306 7 OPTICAL
PROPERTIES OF GAN AND ZNO J.-H. SONG 311 7.1 INTRODUCTION 311 7.1.1
BASICS 313 7.1.2 VALENCE BAND STRUCTURE 313 7.2 EMISSION PROPERTIES OF
GAN 315 7.2.1 BAND EDGE EMISSIONS 315 7.2.2 DEFECT-RELATED EMISSIONS 320
7.2.3 DEEP LEVEL EMISSIONS 323 7.2.4 EMISSION PROPERTIES OF INGAN/GAN
QUANTUM WELLS 324 7.3 EMISSION PROPERTIES OF ZNO 331 7.3.1 BAND EDGE
EMISSIONS 332 7.3.2 DEFECT-RELATED EMISSIONS 334 7.3.3 DEEP-LEVEL
EMISSIONS 338 7.3.4 EMISSION PROPERTIES OF MGZNO/ZNO QUANTUM WELLS 338
7.4 EMISSION PROPERTIES OF NONPOLAR GAN AND ZNO 339 7.4.1 POLARIZED
EMISSION 340 7.4.2 STRAIN EFFECTS 340 7.5 RAMAN SCATTERING PROPERTIES OF
GAN AND ZNO 344 7.5.1 STRAIN EFFECTS 344 7.5.2 CARRIER CONCENTRATION 346
REFERENCES 349 8 ELECTRICAL PROPERTIE CONTENTS XI 8.3.2 SCHOTTKY
CONTACTS TO GAN 369 8.3.3 SCHOTTKY CONTACTS TO ZNO 373 8.4 ELECTRICAL
PROPERTIES 382 8.4.1 ELECTRON TRANSPORT MECHANISM 382 8.4.2 ELECTRICAL
PROPERTIES OF GAN 383 8.4.3 ELECTRICAL PROPERTIES OF ZNO 391 8.5 DEEP
LEVELS OF GAN AND ZNO 397 8.5.1 CHARACTERIZATION OF DEEP LEVELS 397
8.5.2 DEEP LEVELS IN GAN 399 8.5.3 DEEP LEVELS IN ZNO 405 REFERENCES 411
9 GAN AND ZNO LIGHT EMITTERS J.-S. HA 415 9.1 INTRODUCTION 415 9.2
LIGHT-EMITTING DIODES BASIC 416 9.3 LIGHT-EMITTING DIODES BASED ON GAN
419 9.3.1 ISSUES FOR HIGH INTERNAT QUANTUM ENICIENCY 419 9.3.2 ISSUES
FOR HIGH EXTERNAL QUANTUM EFFICIENCY 429 9.3.3 PACKAGING 437 9.3.4
VERTICAL LIGHT-EMITTING DIODE 440 9.4 LIGHT-EMITTING DIODES BASED ON ZNO
444 9.4.1 HYBRID LED 444 9.4.2 ZNO LEDS WITH HOMO P-N JUNCTION 449
REFERENCES 454 10 ZNO AND GAN NANOSTRUCTURES AND THEIR APPLICATIONS S.H.
LEE 459 10.1 INTRODUCTION 459 10.2 CONTROL OF ZNO AND GAN NANOSTRUCTURES
460 10.2.1 SYNTHETIC METHODS 460 10.2.2 PROCESSING AND ASSEMBLY 465 10.3
ZNO AND GAN NANOSTRUCTURES FOR PHOTONIC DEVICE APPLICATIONS 469 10.3.1
OPTICAL CAVITY AND LASING 470 10.3.2 NANOSTRUCTURE-BASED LED 479 10.4
ZNO AND GAN NANOSTRUCTURES FOR ELECTRONIC AND SENSING DEVIC
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| id | DE-604.BV035342730 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T21:31:42Z |
| institution | BVB |
| isbn | 9783540888468 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-017147004 |
| oclc_num | 269435375 |
| open_access_boolean | |
| owner | DE-703 DE-29T DE-92 DE-1043 DE-11 DE-91G DE-BY-TUM |
| owner_facet | DE-703 DE-29T DE-92 DE-1043 DE-11 DE-91G DE-BY-TUM |
| physical | XIV, 517 S. Ill., graph. Darst. |
| publishDate | 2009 |
| publishDateSearch | 2009 |
| publishDateSort | 2009 |
| publisher | Springer |
| record_format | marc |
| series | Advances in materials research |
| series2 | Advances in materials research |
| spelling | Oxide and nitride semiconductors processing, properties and applications Takafumi Yao ; Soon-Ku Hong (eds.) Berlin [u.a.] Springer 2009 XIV, 517 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Advances in materials research 12 Verbindungshalbleiter - Galliumnitrid - Zinkoxid Gallium nitride Electric properties Metal oxide semiconductors Zinc oxide Electric properties Zinkoxid (DE-588)4190864-8 gnd rswk-swf Verbindungshalbleiter (DE-588)4062623-4 gnd rswk-swf Drei-Fünf-Halbleiter (DE-588)4150649-2 gnd rswk-swf Zwei-Sechs-Halbleiter (DE-588)4191263-9 gnd rswk-swf Oxide (DE-588)4126202-5 gnd rswk-swf Galliumnitrid (DE-588)4375592-6 gnd rswk-swf Nitride (DE-588)4171929-3 gnd rswk-swf Verbindungshalbleiter (DE-588)4062623-4 s Galliumnitrid (DE-588)4375592-6 s Zinkoxid (DE-588)4190864-8 s DE-604 Drei-Fünf-Halbleiter (DE-588)4150649-2 s Nitride (DE-588)4171929-3 s Zwei-Sechs-Halbleiter (DE-588)4191263-9 s Oxide (DE-588)4126202-5 s Yao, Takafumi Sonstige oth Hong, Soon-Ku Sonstige oth Erscheint auch als Online-Ausgabe 978-3-540-88847-5 Advances in materials research 12 (DE-604)BV012271346 12 DNB Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=017147004&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Oxide and nitride semiconductors processing, properties and applications Advances in materials research Verbindungshalbleiter - Galliumnitrid - Zinkoxid Gallium nitride Electric properties Metal oxide semiconductors Zinc oxide Electric properties Zinkoxid (DE-588)4190864-8 gnd Verbindungshalbleiter (DE-588)4062623-4 gnd Drei-Fünf-Halbleiter (DE-588)4150649-2 gnd Zwei-Sechs-Halbleiter (DE-588)4191263-9 gnd Oxide (DE-588)4126202-5 gnd Galliumnitrid (DE-588)4375592-6 gnd Nitride (DE-588)4171929-3 gnd |
| subject_GND | (DE-588)4190864-8 (DE-588)4062623-4 (DE-588)4150649-2 (DE-588)4191263-9 (DE-588)4126202-5 (DE-588)4375592-6 (DE-588)4171929-3 |
| title | Oxide and nitride semiconductors processing, properties and applications |
| title_auth | Oxide and nitride semiconductors processing, properties and applications |
| title_exact_search | Oxide and nitride semiconductors processing, properties and applications |
| title_full | Oxide and nitride semiconductors processing, properties and applications Takafumi Yao ; Soon-Ku Hong (eds.) |
| title_fullStr | Oxide and nitride semiconductors processing, properties and applications Takafumi Yao ; Soon-Ku Hong (eds.) |
| title_full_unstemmed | Oxide and nitride semiconductors processing, properties and applications Takafumi Yao ; Soon-Ku Hong (eds.) |
| title_short | Oxide and nitride semiconductors |
| title_sort | oxide and nitride semiconductors processing properties and applications |
| title_sub | processing, properties and applications |
| topic | Verbindungshalbleiter - Galliumnitrid - Zinkoxid Gallium nitride Electric properties Metal oxide semiconductors Zinc oxide Electric properties Zinkoxid (DE-588)4190864-8 gnd Verbindungshalbleiter (DE-588)4062623-4 gnd Drei-Fünf-Halbleiter (DE-588)4150649-2 gnd Zwei-Sechs-Halbleiter (DE-588)4191263-9 gnd Oxide (DE-588)4126202-5 gnd Galliumnitrid (DE-588)4375592-6 gnd Nitride (DE-588)4171929-3 gnd |
| topic_facet | Verbindungshalbleiter - Galliumnitrid - Zinkoxid Gallium nitride Electric properties Metal oxide semiconductors Zinc oxide Electric properties Zinkoxid Verbindungshalbleiter Drei-Fünf-Halbleiter Zwei-Sechs-Halbleiter Oxide Galliumnitrid Nitride |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=017147004&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| volume_link | (DE-604)BV012271346 |
| work_keys_str_mv | AT yaotakafumi oxideandnitridesemiconductorsprocessingpropertiesandapplications AT hongsoonku oxideandnitridesemiconductorsprocessingpropertiesandapplications |