Rear surface conditioning and passivation for locally contracted crytalline silicon solar cells:
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Abschlussarbeit Buch |
| Sprache: | German |
| Veröffentlicht: |
München
Dr. Hut Verlag
2008
|
| Schriftenreihe: | Physik
|
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | VI, 273 S. 210 mm x 148 mm, 427 gr. |
| ISBN: | 9783899638813 |
Internformat
MARC
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Datensatz im Suchindex
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| adam_text | CONTENTS 1 INTRODUCTION 1 2 THEORETICAL BASICS OF SILICON SOLAR CELL
PHYSICS 5 2.1 STRUCTURE AND WORKING PRINCIPLE OF A CRYSTALLINE SILICON
SOLAR CELL 5 2.2 CHARACTERISTIC PARAMETERS DESCRIBING A SOLAR CELL 9 2.3
LOSS MECHANISMS 10 2.3.1 OPTICAL LOSSES 11 2.3.2 RESISTANCE AND SHUNT
LOSSES 14 3 CARRIER RECOMBINATION IN CRYSTALLINE SILICON 15 3.1 BULK
RECOMBINATION 15 3.1.1 RADIATIVE BAND-TO-BAND RECOMBINATION 17 3.1.2
BAND-TO-BAND AUGER RECOMBINATION 18 3.1.3 RECOMBINATION VIA DEFECTS 21
3.1.4 COMBINING THE RECOMBINATION MECHANISMS 23 3.2 SURFACE
RECOMBINATION 25 3.2.1 EXTENDED SRH FORMALISM AND SURFACE RECOMBINATION
VELOCITY 25 3.2.2 FIAT BAND CONDITIONS 26 3.2.3 BAND BENDING AT THE
SURFACE 28 3.2.4 EFFECTIVE CARRIER LIFETIME 32 3.2.5 APPROXIMATION
EQUATIONS FORTHE EFFECTIVE SURFACE RECOMBINATION VELOCITY 33 3.2.6
INJECTION LEVEL DEPENDENCY OF THE SURFACE RECOMBINATION VELOCITY 35
3.2.7 SURFACE PASSIVATION MECHANISMS 36 3.2.8 SIMPLE VISUAL MODEL OF
SURFACE PASSIVATION 37 3.2.9 INTERDEPENDENCE OF SOLAR CELL PARAMETERS,
REAR SURFACE RECOMBINATION VELOCITY AND CELL THICKNESS 38
BIBLIOGRAFISCHE INFORMATIONEN HTTP://D-NB.INFO/992163250 DIGITALISIERT
DURCH TABLE OF CONTENTS 4 COMPARISON OF INDUSTRIAL STANDARD AND PERC
TYPE SOLAR CELLS 45 4.1 SOLAR CELL STRUCTURES 45 4.2 PROCESS SEQUENCES
47 4.3 TYPICAL SOLAR CELL CHARACTERISTICS 51 4.4 SHORT SUMMARY 54 5
PLASMA TECHNOLOGY 55 5.1 BASIC PIASMA PHYSICS 55 5.1.1 BASIC EQUATIONS
55 5.1.2 CHEMICAL REACTIONS 59 5.1.3 SURFACE PROCESSES AND REACTION
KINETICS 62 5.1.3.1 POSITIVE ION NEUTRALISATION AND SECONDARY ELECTRON
EMISSION 62 5.1.3.2 ADSORPTION 63 5.1.3.3 DESORPTION 64 5.1.3.4
FRAGMENTATION 65 5.1.3.5 SPUTTERING 65 5.1.3.6 SURFACE KINETICS 65 5.2
PLASMA EXCITATION PRINCIPLES 66 5.2.1 THERMAL EXCITATION 67 5.2.2
RADIATIVE EXCITATION 67 5.2.3 ELECTROSTATIC FIELDS 67 5.2.3.1 DIRECT
CURRENT (DC, GLOW DISCHARGE) 67 5.2.3.2 WIRE EXPIOSION 69 5.2.4
ELECTROMAGNETIC FIELDS 69 5.2.4.1 CAPACITIVE DISCHARGE 70 5.2.4.2
INDUCTIVE DISCHARGE 75 5.2.4.3 MICROWAVE 76 5.3 PLASMA INDUCED LOSSES 78
5.3.1 SURFACE RESIDUES 79 5.3.2 CONTAMINATION 79 5.3.3 BREAKING OF
CHEMICAL BONDS 80 5.3.4 CHARGING EFFECTS 81 5.4 ETCHING TECHNOLOGIES 81
6.3 CONCLUSION 119 TABLE OF CONTENTS 5.4.1 PHYSICAL ETCHING 82 5.4.2
CHEMICAL ETCHING 82 5.4.3 COMBINATION OF CHEMICAL AND PHYSICAL ETCHING
82 5.4.4 LON-ENHANCED INHIBITOR ETCHING 83 5.4.5 PLASMA ETCHING
TECHNOLOGIES USED IN THIS THESIS 83 5.4.5.1 ELECTRON CYCLOTRON RESONANCE
- MICROWAVE DOWNSTREAM ETCHING (ECR-MWDSE) 83 5.4.5.2 MICROWAVE LINEAR
ANTENNA 85 5.5 DEPOSITION TECHNOLOGIES 90 5.5.1 PLASMA ENHANCED CHEMICAL
VAPOUR DEPOSITION (PECVD) 90 5.5.1.1 DIRECT PIASMA 90 5.5.1.2 REMOTE
PIASMA 90 5.5.2 EXPANDING THERMAL PIASMA (ETP) ENHANCED CHEMICAL VAPOUR
DEPOSITION 91 5.5.3 HOT-WIRE CHEMICAL VAPOUR DEPOSITION 92 5.5.4 PHOTO
CHEMICAL VAPOUR DEPOSITION 94 5.5.5 ATOMIC LAYER DEPOSITION (ALD) 95
5.5.6 SPUTTERING 96 5.5.7 DEPOSITION TECHNOLOGIES USED IN THIS THESIS 98
5.5.7.1 RF-PECVD 98 5.5.7.2 MW-PECVD 99 6 SURFACE CONDITIONING 101 6.1
WET CHEMICAL SURFACE CONDITIONING 101 6.1.1 RCACLEAN 101 6.1.2 HNO3 + HF
101 6.1.3 MIXTURE OF HNO 3 , HF AND H 2 O 102 6.2 PLASMA SURFACE
CONDITIONING 102 6.2.1 SILICON ETCHING USING SULPHUR HEXAFLUORIDE 102
6.2.2 ECR-MWDSE 104 6.2.3 MW LINEAR ANTENNA 106 IV TABLE OF CONTENTS 7
REVIEW OF SURFACE PASSIVATION LAYERS 121 7.1 SILICON NITRIDE (A-SIN X
:H) 121 7.1.1 STOICHIOMETRIC SILICON NITRIDE 122 7.1.2 BONDING IN
AMORPHOUS SILICON NITRIDE 122 7.1.3 ELECTRONIC STRUCTURE OF THE SILICON
NITRIDE BULK 123 7.1.4 DEFECTS IN THE SILICON NITRIDE BULK 124 7.1.5
PROPERTIES OF SILICON-SILICON NITRIDE INTERFACES 126 7.1.6 INFLUENCE OF
HYDROGEN ON THE PASSIVATION 128 7.1.7 PROBLEMS APPLYING SIN AS A REAR
PASSIVATION LAYER TO P-TYPE SI SURFACES OF SOLAR CELLS 128 7.2 SILICON
OXIDE 129 7.2.1 THERMALLY GROWN SILICON DIOXIDE (SIO 2 ) 129 7.2.1.1
GROWTHOFSIO 2 129 ..2.1,2 PROPERTIES OF SIO 2 LAYERS AND THE SI-SIO 2
INTERFACE 130 7.2.1.3 STACKS OF THERMAL SIO 2 AND PIASMA A-SIN X :H 131
7.2.2 CVD SILICON OXIDE (SIO X ) 132 7.3 SILICON CARBIDE (SIC X ) 134
7.4 ALUMINIUM OXIDE (AI 2 O 3 ) 135 7.5 CONCLUSION 137 8 HYDROGENATED
AMORPHOUS SILICON 139 8.1 BASIC PROPERTIES OF HYDROGENATED AMORPHOUS
SILICON 139 8.2 A-SI:H AND A-SI:H + A-SIO X :H PASSIVATION APPLYING WET
AND DRY SURFAC 9.1.2 SOLAR CELL PRECURSORS 206 TABLE OF CONTENTS V
8.4.2.3 X-RAY DIFFRACTOMETRY 156 8.4.2.4 SCANNING ELECTRON MICROSCOPY
(SEM) 157 8.4.2.5 NUCLEAR REACTION ANALYSIS (NRA) 158 8.4.2.6
REHYDROGENATION OF A-SI:H LAYERS 160 8.4.3 THERMAL STABILITY OF PECVD
STACKS OF A-SI:H AND SIO X :H LAYERS 169 8.4.3.1 ANNEALING & LIFETIME
INVESTIGATION 169 8.4.3.2 NUCLEAR REACTION ANALYSIS INVESTIGATION 170
8.4.3.3 DISCUSSION 172 8.4.4 CONCLUSIONS 172 8.5 SOLAR CELLS 173 8.5.1
EXPERIMENTAL 173 8.5.2 RESULTS 174 8.5.2.1 I-V CHARACTERISATION 174
8.5.2.2 INTERNAL QUANTUM EFFICIENCY 175 8.5.2.3 REFLECTION 181 8.5.3
CONCLUSION 182 8.6 TRANSFER OF THE A-SI:H DEPOSITION PROCESS TO AN
INDUSTRIAL INLINE PECVD SYSTEM 183 8.6.1 LIFETIME INVESTIGATION 183
8.6.2 FTIR ANALYSIS 185 8.6.3 ERDA CHARACTERISATION 185 8.6.4
SPECTROSCOPIC ELLIPSOMETRY 186 8:7 AMORPHOUS SILICON PASSIVATION ON
ROUGH SURFACES 187 8.8 IN-SITU PIASMA CLEANING AND A-SI:H DEPOSITION 189
8.9 SURFACE DEGRADATION DURING SCREEN-PRINTED CONTACT FIRING 191 8.9.1
P-TYPEWAFERS 192 8.9.2 P-TYPE WAFERS WITH PHOSPHORUS EMITTER 195 8.10
CONCLUSION 200 9 STACKS OF A-SIO X :H AND A-SIN X :H 203 9.1 LIFETIME
INVESTIGATION 203 9.1.1 SYMMETRIE SAMPLE STRUETURE 204 REFERENCES 251 VI
TABLE OF CONTENTS 9.2 HYDROGEN DEPTH PROFILING 208 9.3 INTERFACE DEFECTS
209 9.4 SOLAR CELL FABRICATION 211 9.5 CONCLUSION 214 10 CONCLUSION 215
11 DEUTSCHE ZUSAMMENFASSUNG (GERMAN CONCLUSION) 219 A APPENDIX 223 A.1
CHARACTERISATION METHODS 223 A.1.1 LIFETIME MEASUREMENT USING QSSPC 223
A.1.1.1 MEASUREMENT TECHNIQUE 223 A. 1.1.2 EXPERIMENTAL DETERMINATION OF
THE OPTICAL FACTOR 227 A.1.2 SPECTRALLY RESOLVED ELLIPSOMETRY 228 A.1.3
I-V MEASUREMENTS 230 A.1.4 QUANTUM EFFICIENCY MEASUREMENTS 230 A.1.5
REFLECTOMETRY 231 A.1.6 NUCLEAR REACTION ANALYSIS (NRA) 232 A. 1.7 X-RAY
PHOTOELECTRON SPECTROSCOPY (XPS) 232 A.1.8 FOURIER TRANSFORM INFRARED
SPECTROSCOPY (FTIR) 234 A.1.9 ELECTRON SPIN RESONANCE (ESR) 235 A.2 LIST
OF ABBREVIATIONS AND SYMBOLS 237 PUBLICATIONS 245 ACKNOWLEDGEMENTS 249
|
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| author_facet | Hofmann, Marc |
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| dewey-search | 621.31244 |
| dewey-sort | 3621.31244 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Physik Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Thesis Book |
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| indexdate | 2024-07-09T21:31:06Z |
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| isbn | 9783899638813 |
| language | German |
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| spelling | Hofmann, Marc Verfasser aut Rear surface conditioning and passivation for locally contracted crytalline silicon solar cells Marc Hofmann München Dr. Hut Verlag 2008 VI, 273 S. 210 mm x 148 mm, 427 gr. txt rdacontent n rdamedia nc rdacarrier Physik Zugl.: Konstanz, Univ., Diss., 2008 Polykristall (DE-588)4188261-1 gnd rswk-swf Silicium (DE-588)4077445-4 gnd rswk-swf Passivierung (DE-588)4173500-6 gnd rswk-swf Rückseite (DE-588)4468345-5 gnd rswk-swf Lasertechnologie (DE-588)4166821-2 gnd rswk-swf Solarzelle (DE-588)4181740-0 gnd rswk-swf (DE-588)4113937-9 Hochschulschrift gnd-content Solarzelle (DE-588)4181740-0 s Silicium (DE-588)4077445-4 s Polykristall (DE-588)4188261-1 s Rückseite (DE-588)4468345-5 s Passivierung (DE-588)4173500-6 s Lasertechnologie (DE-588)4166821-2 s DE-604 DNB Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=017119847&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Hofmann, Marc Rear surface conditioning and passivation for locally contracted crytalline silicon solar cells Polykristall (DE-588)4188261-1 gnd Silicium (DE-588)4077445-4 gnd Passivierung (DE-588)4173500-6 gnd Rückseite (DE-588)4468345-5 gnd Lasertechnologie (DE-588)4166821-2 gnd Solarzelle (DE-588)4181740-0 gnd |
| subject_GND | (DE-588)4188261-1 (DE-588)4077445-4 (DE-588)4173500-6 (DE-588)4468345-5 (DE-588)4166821-2 (DE-588)4181740-0 (DE-588)4113937-9 |
| title | Rear surface conditioning and passivation for locally contracted crytalline silicon solar cells |
| title_auth | Rear surface conditioning and passivation for locally contracted crytalline silicon solar cells |
| title_exact_search | Rear surface conditioning and passivation for locally contracted crytalline silicon solar cells |
| title_full | Rear surface conditioning and passivation for locally contracted crytalline silicon solar cells Marc Hofmann |
| title_fullStr | Rear surface conditioning and passivation for locally contracted crytalline silicon solar cells Marc Hofmann |
| title_full_unstemmed | Rear surface conditioning and passivation for locally contracted crytalline silicon solar cells Marc Hofmann |
| title_short | Rear surface conditioning and passivation for locally contracted crytalline silicon solar cells |
| title_sort | rear surface conditioning and passivation for locally contracted crytalline silicon solar cells |
| topic | Polykristall (DE-588)4188261-1 gnd Silicium (DE-588)4077445-4 gnd Passivierung (DE-588)4173500-6 gnd Rückseite (DE-588)4468345-5 gnd Lasertechnologie (DE-588)4166821-2 gnd Solarzelle (DE-588)4181740-0 gnd |
| topic_facet | Polykristall Silicium Passivierung Rückseite Lasertechnologie Solarzelle Hochschulschrift |
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