Best of Soviet semiconductor physics and technology, 1989-1990:
Gespeichert in:
| Format: | Buch |
|---|---|
| Sprache: | English Russian |
| Veröffentlicht: |
Singapore [u.a]
World Scientific
1995
|
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | Includes bibliographical references and index |
| Beschreibung: | XXIII, 638 S. Ill., graph. Darst. |
| ISBN: | 9810215797 |
Internformat
MARC
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| 040 | |a DE-604 |b ger |e aacr | ||
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| 044 | |a xxu |c US | ||
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| 245 | 1 | 0 | |a Best of Soviet semiconductor physics and technology, 1989-1990 |c edit. Mikhail Levinshtein ... |
| 264 | 1 | |a Singapore [u.a] |b World Scientific |c 1995 | |
| 300 | |a XXIII, 638 S. |b Ill., graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 500 | |a Includes bibliographical references and index | ||
| 650 | 4 | |a Semiconductors | |
| 650 | 4 | |a Semiconductors |x Research |z Soviet Union | |
| 650 | 0 | 7 | |a Halbleiterphysik |0 (DE-588)4113829-6 |2 gnd |9 rswk-swf |
| 651 | 4 | |a Sowjetunion | |
| 651 | 7 | |a Sowjetunion |0 (DE-588)4077548-3 |2 gnd |9 rswk-swf | |
| 689 | 0 | 0 | |a Halbleiterphysik |0 (DE-588)4113829-6 |D s |
| 689 | 0 | 1 | |a Sowjetunion |0 (DE-588)4077548-3 |D g |
| 689 | 0 | |5 DE-604 | |
| 700 | 1 | |a Levinštein, Michail E. |e Sonstige |4 oth | |
| 856 | 4 | 2 | |m Digitalisierung UB Regensburg |q application/pdf |u http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=017116969&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |3 Inhaltsverzeichnis |
| 999 | |a oai:aleph.bib-bvb.de:BVB01-017116969 | ||
Datensatz im Suchindex
| _version_ | 1804138616966873088 |
|---|---|
| adam_text | CONTENTS
INTRODUCTION
......................................
v
Section I. REVIEWS
.................................... 1
1-1.
M.
A. Alekseev,
I. Ya.
Karlik,
D.
N.
Mirlin,
and V.
F. Sapega,
Spectroscopy
of hot photoluminescence of semiconductors
,
Sov.
Phys. Semicond.
23 (1989) 479-490..................... 4
1-2.
V.
F.
Masterov and L. F. Zakharenkov,
Rare-earth elements in
III-V
semiconductors ,
Sov. Phys. Semicond.
24 (1990) 383-396 16
1-3.
T. A. Polyanskaya and Yu. V. Shmartsev, Quantum
corrections
to the conductivity of semiconductors with a two-dimensional and
a three-dimensional electron gas
,
Experiments,
Sov. Phys.
Semi¬
cond.
23 (1989) 1-19 ............................... 30
1-4.
A. R.
Regel ,
V. M.
Glazov, and V. B. Kol tsov, Magnetic suscepti¬
bility of semiconductors in the liquid state ,
Sov. Phys.
Semicond.
23 (1989) 707-714 ................................. 49
1-5.
I.
M.
Tsidü kovskiï,
Zero-gap semimagnetic HgFeSe semiconduc¬
tors (review) ,
Sov. Phys.
Semicond.
24 (1990) 373-382...... 57
Section II. SEMICONDUCTOR THEORY
.................. 67
II—
1.
S. D.
Baranovskiï, H.
Fritzsche,
E.
I. Levin, I. M. Ruzin, and
B. I.
Shklovskiï,
Theory of low-temperature photoconductivity
and photoluminescence in amorphous semiconductors
,
Sov. Phys.
JETP
69 (1989) 773-782............................. 71
II-2. Yu. A. Bychkov, V. I. Mel nikov, and
É.
I. Rashba, Effect of
spin-orbit coupling on the energy spectrum of a 2D electron system
in a tilted magnetic field ,
Sov. Phys.
JETP
71 (1990) 401-405 81
II—
3.
Yu. A. Bychkov and
É.
I. Rashba, Deexcitons in an inverted 2D
semiconductor magnetoplasma , JETP Lett
52 (1990) 624-629 86
II-4. A. S.
Furman,
Theory of field-even current in ferroelectrics
,
Sov.
Phys. JETP
70 (1990) 918-922 ........................ 92
Π-5.
Z.
S. Gribnikov
and O. É.
Raïchev,
Spectrum of electrons in a het-
erostructure quantum well and tunneling between size-quantization
subbands in a longitudinal electric field ,
Sov.
Phys. JETP
69
(1989) 564-573 ....................................
97
II-6. S. V.
Iordanskiï
and B.
A.
Muzykantskiï,
Phonon absorption by
two-dimensional electrons in a strong magnetic field
,
Sov.
Phys.
JETP
69 (1989) 1006-1011 ........................... 107
II—
7.
I. A. Larkin, Vertical transport and photoluminescence in super-
lattices ,
Sov. Phys.
Semicond.
23 (1989) 1028-1033 ........ 113
II-8.
I. B. Levinson,
Potential distribution in a quantum point contact
,
Sov. Phys.
JETP
68 (1989) 1257-1265 .................. 119
II-9. V. L.
Pokrovskiï,
L.
P. Pryadko, and A. L. Talapov, Resonance
tunneling and destruction of the quantum Hall effect in strong elec¬
tric fields ,
Sov. Phys.
JETP
68 (1989) 376-381 ........... 128
11-10.
M. É. Raïkh
and I. M. Ruzin, Fluctuations of the hopping con¬
ductance of one-dimensional systems ,
Sov. Phys.
JETP
68 (1989)
642-647 ......................................... 134
Section III. SEMICONDUCTOR PHYSICS
................. 140
III—
1.
D. I. Aladashvili, Z. A. Adamiya, K.
G. Lavdovskiï, E.
I. Levin,
and B. I.
Shklovskiï,
Nonohmic hopping conductivity of weakly
compensated semiconductors ,
Sov. Phys.
Semicond.
24 (1990)
143-152 ......................................... 147
Ш-2.
V.
N.
Astratov, A. V.
Il inskiï,
S. M. Repin, and
A. S. Furman,
Dynamics of screening of an electric field in high-resistivity ZnSe
semiconductors ,
Sov. Phys.
Solid State
32 (1990) 1749-1754 . . 157
111-3.
D.
N.
Bychkovskiï,
O. V. Konštantínov,
and B. V. Tsarenkov,
Heterojunction formed at a boundary characterized by an abrupt
change in the free-carrier density in a semiconductor with a
homogeneous composition ,
Sov. Phys.
Semicond.
24 (1990)
1151-1155 .......................................
163
III-4. V.
N.
Davydov, E. A. Loskutova, and
E. P. Naïden,
Magnetic-field-
stimulated delayed structural changes in semiconductors ,
Sov.
Phys. Semicond.
23 (1989) 989-991..................... 168
111-5.
A. P. Dmitriev, S. A. Emel yasiov, Ya. V. Terent ev, and I. D.
Yaroshetskiï,
Quantum-interference resonant photocurrent in
transitions between free-electron states , JETP Lett.
51 (1990)
445-448 ......................................... 171
111-6.
E. M. Gershenzon, Yu. A. Gurvich, A. P. Mel nikov, and L.
N.
Shestakov, High-temperature conductivity with variable hopping
length , JETP Lett.
51 (1990) 231-234 .................. 175
111—7.
B.
N.
Gresserov and
T. T.
Mnatsakanov, Relationship between
carrier mobilities in n- and p-type semiconductors ,
Sov. Phys.
Semicond.
23 (1989) 1025-1028........................ 179
III—
8.
I. V. Karpova,
V. I. Perel ,
and
S. M.
Syrovegin, Auger recombi¬
nation in heavily doped germanium ,
Sov. Phys.
Semicond.
23
(1989) 518-521 .................................... 183
Xl
ΙΠ-9. Ο. Ε.
Kvyatkovskiï,
Determination
of the critical points of band
spectrum from the carrier-density and temperature dependences of
the magnetic susceptibility in a weak magnetic field ,
Sov.
Phys.
Solid State
32 (1990) 1471-1476 ....................... 187
111-10.
S. F. Savikhin, A. M. Freiberg, and
V. V. Trávnikov,
Picosecond
kinetics of emission by surface
excitons
in ZnO , JETP Lett.
50
(1989) 122-126 .................................... 193
III—
11. N.
I. Zheludev and D. Yu. Parashchuk, First-order spatial dis¬
persion in hot gallium arsenide electron-hole plasma: picosecond-
resolution polarization diagnostics , JETP Lett.
52 (1990)
34-37........................................... 198
Phonon Physics
III-12. B. Kh. Bairamov,
T. Gant, M.
Delanejr, Yu.
É.
Kitaev, M. V.
Klein, D.
Levi,
H. Morkoç,
and
R.
A. Évarestov, A
theoretical
and experimental investigation of Raman scattering in the size-
quantizing heterostructure superlattices (GaAs)m(AlAs)n ,
Sov.
Phys. JETP
68 (1989) 1271-1276 ......................
202
III-13. V.
A. Gaïsler,
A. O. Govorov, T. V. Kurochkina,
N.
T. Moshe-
gov, S. I. Stenin, A. I. Toropov, and A. P. Shebanin, Phonon
spectrum of GaAs-InAs superlattices ,
Sov. Phys.
JETP
71
(1990) 603-609 .................................... 208
111-14.
A. M. Mintairov, K. E. Smekalin, V. M. Ustinov, and V. P.
Khvostikov, Raman scattering of light by mixed XO-phonon-
plasmon oscillations in two-mode w-type Al^Gai-^As (x
> 0.4)
solid solutions ,
Sov. Phys.
Semicond.
24 (1990) 962-968..... 215
Mesoscopics
111-15.
A. A. Býkov, G. M. Gusev, Z. D. Kvon, D.
I. Lubyshev, and V. P.
Migal ,
Interband
photoconductivity of a mesoscopic GaAs sam¬
ple , JETP Lett.
49 (1989) 135-138 .................... 222
III—
16.
A. K.
Geïm, S.
V. Dubonos, and I. Y.
Antonova,
Mesoscopic con¬
ductivity fluctuations in samples with magnetic impurities
,
JETP
Lett.
52 (1990) 247-251 ............................. 226
111-17.
A. O. Orlov,
M.
E.
Raikh, I.
M.
Ruzin, and
А. К.
Savchenko,
Statistical properties of mesoscopic conductivity fluctuations in a
short-channel GaAs field-effect transistor
,
SOt». Phys.
JETP
69
(1989) 1229-1236 .................................. 231
Noise
111-18.
V. V. Kuznetsov, E. I. Laiko, and A. K. Savchenko, Characteristic
features of the current noise in the mesoscopic channel of a field-
effect GaAs transistor , JETP Lett.
49 (1989) 453-457....... 239
111—19. N.
V. D yakonova and M. E. Levinshtein, Model of bulk
1/ƒ
noise
in semiconductors
,
Sov. Phys.
Semicond.
23 (1989) 175-180 . . 244
Xli
Laser Annealing
III-20. A.
N.
Vasil ev, S. Yu. Karpov, Yu. V. Koval chuk, V. E. Myachin,
Yu. V.
Pogorel skiï,
M. Yu.
Silová, I. A. Sokolov,
and G. A. Fokin,
Formation of metastable states of the liquid phase in the course
of melting of III-V semiconductor compounds by nanosecond laser
pulses ,
Sov.
Phys. JETP
69 (1989) 827-835..............
25°
III-21. S. V. Govorkov, I. L.
Shumaï,
W. Rudolph, and T.
Schröder,
Ini¬
tial stages of the melting of a GaAs surface by femtosecond laser
pulses: Study by second-harmonic-generation method , JETP Lett.
52 (1990) 117-121 .................................
259
A4B6 Semiconductors
ΙΠ-22.
B. A. Akimov, A. V. Nikorich, L. I. Ryabova, and
N.
A. Shirokova,
Metal-insulator transition in Pbi-xMn-cTe: In solid solutions ,
Sov. Phys.
Semicond.
23 (1989) 636-638................. 264
III-23. V. I.
Kaïdanov,
S. A. Rykov, M. A. Rykova, and
О.
V.
Syuris,
Investigation of metastable quasilocal states of indium in lead
telluride by tunnel spectroscopy
,
Sov. Phys.
Semicond.
24(1990)
87-91 ...........................................
267
Narrow-band Semiconductors
III—
24.
L. G.
Gerchikov and A. V. Subashiev, Nonmonotonic dependence
of the width of the band gap of a semiconductor film with a near-
zero band gap ,
5ου.
Phys. Semicond.
23 (1989) 1368-1370 ... 272
Ш-25.
V. F. Radantsev, Parameters of the spin-orbit interaction in a
two-dimensional electron gas in surface layers of
Hgi_xCda;Te ,
Sov.
Phys. JETP
69 (1989) 1012-1016 ...............> . . 275
Semimagnetic Semiconductors
III-26.
E. I. Georgitsé,
V. V. D yakonov, V. I. Ivanov-Omskii, V. M.
Pogorletskii,
N.
G. Romanov, and V. A. Smirnov, Optically de¬
tectable magnetic resonance in a semimagnetic semiconductor ,
Sov.
Tech. Phys. Lett.
16 (1990) 715-716 ................ 280
III-27. B. P. Zakharchenya and Yu. G. Kusraev, Optical manifestation of
spin-glass properties of semimagnetic semiconductors , JETP Lett.
50 (1989) 225-228 ................................. 282
Amorphous Semiconductors
III-28. S. B. Aldabergenova, V. G. Karpov, K. V. Kougiya, A. B. Pevtsov,
V.
N.
Solov ev, and
N.
A. Feoktistov, Electron states in an amor¬
phous semiconductor with mobile impurities. Thermally stimulated
processes in a-Si:H ,
Sov. Phys.
Solid State
32 (1990) 2087-2095 286
Chalcogenide Glassy Semiconductors
Ш-29.
V. M. Lyubin and V. K. Tikhomirov, Photoinduced dichroism in
glassy chalcogenide semiconductor films ,
5ου.
Phys. Solid State
32 (1990) 1069-1074................................ 295
хш
Ш-ЗО.
T.
F. Mazets and
K. D.
Tséndin,
Mechanism of doping of glassy
chalcogenide semiconductors ,
Sov. Phys.
Semicond.
24 (1990)
1214-1217 ....................................... 301
Organic Semiconductors
111-31.
O. V. Demicheva, D.
N.
Rogachev, S. G. Smirnova, E. I. Shkl-
yarova, M. Yu. Yablokov, V. M. Andreev, and L.
N.
Grigorov,
Destruction of ultrahigh conductivity of oxidized polypropylene
by critical current ,
Sov.
Phys. JETP
51 (1990) 258-263 ..... 305
III-32. A.
N.
Ionov and V. M. Tuchkevich, The ultrahigh conductivity of
polypropylene , Aon. Tech. Phys. Lett.
16 (1990) 638-640 ___ 311
Low-Dimensional Systems
a. Zero-Dimensional Systems
111—33.
A. I. Ekimov, I. A. Kudryavtsev,
M. G. Ivanov,
and
Al.
L. Éfros,
Photoluminescence of quasizero-dimensional semiconductor struc¬
tures ,
Sov. Phys.
Solid State
31 (1989) 1385-1393 ......... 314
b. One-Dimensional Systems
III-34. I. V. Kukushkin, A. S. Plaut, K.
von
Klitzing, K. Ploog, and D.
Heitmann, Magnetooptics of quasi-lD electrons at isolated GaAs-
AlGaAs heterojunction , JETP Lett.
51 (1990) 201-205...... 323
c. Two-Dimensional Systems
cl. 6-Doped Structures
Ш-35.
V. L. Aľperovich,
K. S. Zhuravlev, D. I. Lubyshev, V. P.
Migał ,
and
B.
R. Semyagin, Radiative recombination of photoholes lo¬
calized in potential of ¿-doped
nini superlattices ,
JETP Lett.
50
(1989) 510-513 .................................... 328
111-36.
A. M. Vasil ev, P. S. Kop ev,
M. Yu. Nadtochiï,
and V. M. Usti¬
nov, Transitions involving size-quantized subbands manifested in
the photoluminescence spectrum of ¿-doped GaAs , 50V. Phys.
Semicond.
23 (1989) 1320-1322........................ 332
c2. Superlattices
III-37.
S. V. Ivanov,
P. S. Kop ev, V. Yu. Nekrasov, A. G. Pakhomov, V.
N.
Trukhin, and I. D.
Yaroshetskiï,
Energy relaxation and trans¬
port of electrons and holes in short-period semiconductor superlat¬
tices ,
Sov. Phys.
Semicond.
23 (1989) 969-971............ 335
III-38. I. V. Kolesnikov, A.
N.
Koyalev, A. Yu. Sipatov, V. I. Paramonov,
A. I. Fedorenko, and A. E. Yunovich, Size-quantization effects
in the photoluminescence of lead chalcogenide superlattices ,
Sov.
Phys. Semicond.
23 (1989) 601-603..................... 338
XIV
сЗ.
Quantum
Hall Effect
Ш-39.
S. M. Chudinov,
V.
A. Kul bachinskiï, G.
Mancini,
B. K. Medvedev,
and D. Yu. Rodichev, Quantum
Hall effect and the
g
factor of 2£>
electrons in GaAs-based heterostructures
,
Sov.
Phys. Semicond.
24 (1990) 1185-1188 ................................ 341
III-40. V. T. Dolgopolov,
N.
B. Zhitenev, and A. A. Shashkin, Direct
experimental proof of the existence of delocalized states below the
Fermi level under conditions corresponding to the integer quantum
Hall effect , JETP Lett.
52 (1990) 196-200 ...............
345
I. V. Kukushkin, K.
von
Klitzing, A. S. Plaut, K. Ploog, H. Bu-
mann, W. Joss, G. Martinez, and V. B. Timofeev, Magnetooptics
of incompressible Fermi liquid in
ultraquantum
limit
,
JETP Lett.
51 (1990) 654-660 .................................
350
c4. Energy Spectrum
III-42. H. Buhmann, W. Joss, K.
von
Klitzing, I. V. Kukushkin, G. Mar¬
tinez, A. Plaut, K. Ploog, and V. B. Timofeev, Spectroscopic
observation of Wigner crystallization of 2D electrons in a strong
transverse magnetic field , JETP Lett.
52 (1990) 306-310..... 357
III-43. V. E. Kirpichev, I. V. Kukushkin, V. B. Timofeev, and V. I.
Fal ko, Energy spectrum of 2D electrons in inclined magnetic
field , JETP Lett.
51 (1990) 436-440.................... 362
сб.
Electrical Properties
V. T. Dolgopolov,
N.
B. Zhitenev, P. S. Kop ev, and V. M. Usti¬
nov, Time for establishing a Hall potential difference in a two-
dimensional electron system ,
Sov. Phys.
JETP
70 (1990) 1147-
1151............................................ 367
111—45.
A. K.
Geïm,
S. V. Dubonos, and A. V.
Khaetskiï,
The Hall effect
and magnetoresistance of 2D electron gas in the scattering by flux
quanta , JETP Lett.
51 (1990) 121-125.................. 372
III-46. P. S. Kop ev,
M. Yu. Nadtochiï,
and V. M. Ustinov, Mechanisms
of a persistent photoconductivity in selectively doped GaAs/n-
(Al, Ga)As heterostructures ,
Sov. Phys.
Semicond.
23 (1989)
859-861 ......................................... 377
III-47. S. G. Petrosyan and A. Ya. Shik, Contact phenomena in a two-
dimensional electron gas ,
Sov. Phys.
Semicond.
23 (1989) 696-
697............................................ 380
сб.
Optical Properties
111-48.
E. V. Beregulin, S. D. Ganichev, K. Yu. Glukh, G. M.
Gusev, Z. D.
Kvon, A. Ya. Shik, and I. D. Yaroshetskii, Rapid submillimeter
photoconductivity and the energy relaxation of a two-dimensional
electron gas at the surface of silicon ,
Sov. Phys.
JETP
70 (1990)
1138-1143 .......................................
382
XV
ΙΠ-^49.
V.
Κ.
Kalevich,
V.
L. Korenev, and O. M. Fedorova,
Optical polar¬
ization of nuclei in GaAs/AlGaAs quantum-well structures
,
JETP
Lett.
52 (1990) 349-354 ............................. 388
111-50.
P. S. Kop ev, D.
N.
Mirlin, D. G. Polyakov, I. I. Reshina, V.
F. Sapega, and A. A. Sirenko,
Photoluminescence
of hot two-
dimensional electrons in quantum wells and determination of the
polar scattering times ,
Sov. Phys.
Semicond.
24 (1990) 757-762
394
Section IV. MATERIAL GROWTH AND MATERIAL
PROPERTIES
............................... 400
Reviews
IV-1.
N.
S. Baryshev,
B. L. Geľmont,
and M. I. Ibragimova, Carrier
recombination processes in CdrnHgi^Te ,
Sov. Phys.
Semicond.
24 (1990) 127-137 ................................. 405
IV-2. Yu. M. Gal perin, E. M. Gershenzon, I. L. Drichko, and L.
B. Litvak-Gorskaya, Low-temperature transport phenomena in
compensated
га
-type
InSb ,
Sov. Phys.
Semicond.
24 (1990)
1-15............................................ 416
General Problems
rV-3. I. L. Aleiner and R.
A. Suris,
The shape and activation energy
of critical two-dimensional nuclei on the
(001)
surface of a III-V
crystal during epitaxial growth ,
Sov.
Tech. Phys. Lett.
16(1990)
547-548 ......................................... 431
IV-4. I. B. Snapiro and
N. N.
Tkachenko, Mechanism for nonlinear im¬
purity diffusion in semiconductors , JETP Lett.
50 (1989) 120-121 433
Measurements
rV-5. V. Balinas, A. T. Gorelenok, A. Krotkus, A. Stamenis, and
N.
M. Shmidt, Determination of the current-voltage characteristic of
InGaAs using picosecond electrooptic sampling apparatus ,
Sov.
Phys. Semicond.
24 (1990) 534-537..................... 435
TV-6.
S. D. Baranovskiï,
B. L. Geľmont, V. G. Golubev, V. I. Ivanov-
ОтѕШ,
and A. V. Osutin,
Spectroscopic determination of the
degree of compensation and concentration of impurities in high-
purity GaAs ,
Sov. Phys.
Semicond.
23 (1989) 891-894...... 439
IV-7. A. A. Bukharaev, A. V. Nazarov, V. Yu. Petukhov, and
K M.
Salikhov, Study of the surface of implanted silicon with a scanning
tunneling microscope ,
Sov.
Tech. Phys. Lett.
35 (1990) 207-
209 ............................................ 443
IV-8. S. G. Konnikov, V. A. Solov ev, V.
E.
Umanskiï,
and V. M.
Christyakov, Determination of electrophysical parameters of thin
heteroepitaxial films using a scanning electron microscope (the¬
ory) ,
Sov. Phys.
Semicond.
23 (1989) 878-880............ 446
XVI
Si
IV-9.
V. I. Fistuľ
and V. A. Shmugurov, Interstitial states of transition-
metal impurities in silicon
.
I. Migration theory ,
Sov. Phys.
Semicond.
23 (1989) 424-
428 ............................................ 449
II. Comparison of the migration theory with experiments ,
Sov.
Phys. Semicond.
23 (1989)
429-Ш
..................... 454
III. Theory of solubility ,
Sov. Phys.
Semicond.
23 (1989) 431-
434 ............................................ 456
A4B4
IV-10. M. M. Anikin, V. V. Evstropov, I. V. Popov, A. M. Strel chuk, and
A. L. Syr kin, Variant of a nonclassical thermal injection current
in silicon carbide
p
-п
structures ,
Sov. Phys.
Semicond.
23 (1989)
1122-1125 .......................................
460
IV-11. L. I. Berezhinskii, S. I. Vlaskina, V. E. Rodionov, and Kh. A.
Shamuratov, Films of cubic silicon carbide on a silicon substrate
,
5ου.
Tech. Phys. Lett.
15 (1989) 57-58.................. 464
IV-12. A. I. Girka, A. D. Mokrushin, E.
N.
Mokhov, V. M. Osadchiev, S.
V. Svirida, and A. V. Shishkin, Positron diagnostics of phase tran¬
sitions in a system formed by SiC, nitrogen, and vacancy defects
,
Sov. Phys.
JETP
70 (1990) 322-328 .................... 466
IV-13.
A. O. Konštantínov,
Influence of temperature on impact ioniza-
tion and avalanche breakdown in silicon carbide
,
Sov. Phys.
Semi¬
cond.
23 (1989) 31-34............................... 473
IV-14. Sh. A. Nurmagomedov, A.
N.
Pikhtin, V.
N.
Razbegaev,
G. K.
Safaraliev, Yu. M. Tairov, and V. F. Tsvetkov, Optical absorption
and luminescence of
(8іС)і_а;(АШ)ж
solid solutions ,
Sov. Phys.
Semicond.
23 (1989) 100-101 ......................... 477
IV-15. M.
V. Lupal,
K. L.
Lyutovich,
M. F. Pánov,
Α. Ν.
Pikhtin, and V.
A. Popov, Parameters of the energy band structure of Sis
Gei
-χ
solid solutions
,
Sov. Phys.
Semicond.
24 (1990) 1001-1003 ... 479
ASBS
IV-16. B. M. Ashkinadze, V. V. Bel kov, and A. G. Krasinskaya, Mi¬
crowave cyclotron resonance in pure GaAs crystals ,
Sov. Phys.
Semicond.
24 (1990) 361-362 ......................... 482
IV-17. Yu. K. Krutogolov, S. V. Dovzhenko, S. A. Diordiev, L. I. Kruto-
golova, Yu. I. Kunakin, and
S. S.
Ryzhikh, Investigation of the
energy band structure of In1_xGa3:P solid solutions by the photo¬
electric method ,
Sov. Phys.
Semicond.
23 (1989) 557-558 .... 484
IV-18.
É.
M. Omel yanovskiï,
A. V. Pakhomov, A. Ya. Polyakov, and S. V.
Shepekina, Atomic hydrogen passivation of donors and acceptors
in ternary and quaternary solutions of the InGaAsP system
,
Sov.
Phys. Semicond.
23 (1989) 1059-1060 ................... 486
XVII
IV-19.
V.
A. Terekhov,
V.
M. Kashkarov,
É.
P. Domashevskaya,
N. N.
Arsent ev, and T. M.
Ivanova,
Electron
structure
of the valence
band of AlyGai_j,As and GaAsi-^Pj, solid solutions determined
using x-ray spectroscopy ,
Sov. Phys.
Semicond.
23 (1989) 167-
170 ............................................ 488
A2Be
IV-20. T. I. Benyushis, M. I. Vasilevskii, B. V. Gurylev, S.
N.
Ershov,
A. D. Zorin, G. A. Karzhin, A. B. Ozerov, V. A. Panteleev, and
I. A. Feshchenko, Low-temperature stimulated heteroepitaxy of
II-VI semiconductor compounds from metalorganic compounds ,
Sov.
Tech. Phys. Lett.
15 (1989) 231-232 ................
492
IV-21. T. R.
Globus,
A. O. Olesk, and S. A. Olesk, Optical properties
of PbSe. Transitions to higher bands ,
Sov. Phys.
Semicond.
24
(1990) 22-27...................................... 494
Amorphous Semiconductors
IV-22. D. I. Bilenko, Yu.
N.
Galishnikova,
É.
A. Zharkova, O. Yu.
Koldobanova, and I. I. Nikolaeva, Conductivity of periodic multi¬
layer a-Si:H/a-SiN:H structures during their formation
,
Sov.
Tech.
Phys. Lett.
15 (1989) 607-609.........................
50°
Glassy Chalcogenide Semiconductors
IV-23. A. M. Andriesh, V. I. Nefedov, D. I. Tsiulyanu, A.
N.
Sokolov,
G.
M.
Tridukh, and
L. B.
Grinshpun, Anodic electrode process stimu¬
lated by external influences in glassy chalcogenide semiconductors ,
Sov.
Phys. Tech. Phys.
35 (1990) 725-727................
503
Organic Semiconductors
IV-24. A.
N.
Aleshin, A. V. Gribanov, A. V. Dobrodumov, A. V. Suvorov,
and I. S. Shlimak, Electrophysical properties of ion-bombarded
PM polyimide films ,
Sov. Phys.
Solid State
31 (1989) 6-Ю ... 506
Section
V. A3B5
COMPOUND SEMICONDUCTOR DEVICES
511
Device Physics
V-l. I.
N.
Dolmanov, V. I.
Ryzhiï,
and V. I. Tolstikhin, Transport
effects in an injector with resonant tunneling of electrons ,
Sov.
Phys. Semicond.
24 (1990) 983-988 ....................
516
V-2. B.
N.
Gresserov and T. T. Mnatsakanov, Estimate of the role of
the electron-hole scattering in the transport of carriers in multilayer
gallium arsenide structures , SO«. Phys. Semicond.
24 (1990)
1042-1043 .......................................
bM
V-3. A. S. Kyuregyan and S.
N.
Yurkov, Room-temperature avalanche
breakdown voltages of
p
-п
junctions made of Si, Ge, SiC, GaAs,
GaP, and InP ,
Sov. Phys.
Semicond.
23 (1989) 1126-1131 ... 524
XVIII
V-4.
В.
I. Lev,
T.
V.
Torchinskaya, P. M. Tomchuk, and M. K.
Sheïnkman,
Kinetics of injection-stimulated
transformation
of de¬
fects in light-emitting GaAs:Si structures
,
Sov.
Phys. Semicond.
23 (1989) 949-954 .................................
530
V-5. V. D. Pishchalko and V. I. Tolstikhin, Carrier heating effects in
InGaAsP/InP injection
heterolasers , Sov.
Phys. Semicond.
24
(1990) 288-294 ...................................
536
Devices
a. Light-Emitting Devices
GaAlAs/GaAs
V-6. Zh. I. Alferov,
S. V. Ivanov,
P. S. Kop ev,
N. N.
Ledentsov, B. Ya.
Meľtser,
and
M. É.
Lutsenko, Double-heterostructure separate-
confinement
(Al, Ga)As
lasers emitting at
0.8
μπι
(175
A/cm2)
and
0.73
μπα
(350
A/cm2) and characterized by a doped quantum
well ,
Sov. Phys.
Semicond.
24 (1990) 122-123 ...........
543
V-7. V. B. Afanas ev, S. A. Gurevich, A. L. Zakgeim, Yu. A. Lifshitz,
V. M. Marakhonov, V. P. Khvostikov, I.
É.
Chebunina, and B.
S. Yavich, Fast optoelectronic injection-laser/field-effect transis¬
tor integrated circuit based on an AlGaAs/GaAs heterostructure
,
Sov.
Tech. Phys. Lett.
16 (1990) 551-552 ................
545
V-8. A. Galvanauskas, A. Krotkus, E. L. Portnoi, and
N.
M. Stel makh,
Electrooptic sampling with the use of a picosecond injection laser
,
Sov.
Tech. Phys. Lett.
16 (1990) 54-55 .................
547
InGaAsSb
V-9.
V. G. Avetisov, A. N. Baranov,
A.
N.
Imenkov, A. I. Nadezhdin-
skii, A.
N.
Khusnutdinov, and Yu. P. Yakovlev, Measurement of
the emission linewidth of long-wavelength injection lasers based on
GalnAsSb ,
Sov.
Tech. Phys. Lett.
16 (1990) 549-550 ......
549
V-10. A.
N.
Imenkov,
О
.
P. Kapranchik, A. M. Litvak, A. A. Popov,
N.
A. Charykov, and Yu. P. Yakovlev, Long-wavelength light-
emitting diodes based on GalnAsSb near the immiscibility region
(λ
= 2.4-2.6
џт, Т
= 300
Κ) , 5ου.
Tech. Phys. Lett.
16 (1990)
931-934 .........................................
551
V-ll.
V. L Vasiľev, N. D. Eľinskaya, D.
V. Kuksenkov,
V. I.
Kuchin-
skii, V. A. Mishurnyi, V. V. Sazonov, V. V. Smirnitskii, and
N. N.
Faleev, Distributed-feedback injection heterojunction lasers in the
system InGaAsSb/GaAs ,
Sov.
Tech. Phys. Lett.
16 (1990) 67-
68 .............................................
555
InGaAsP
V-12. I.
É.
Berishev, D. Z. Garbuzov, S. E. Goncharov, Ya. V. fl in, A. V.
Mikhailov, A. V. Ovchinnikov,
N.
A. Pikhtin,
É. U.
Rafailov, and I.
S. Tarasov, Optical module based on an InGaAsP/InP quantum-
XIX
well
laser
with power in the watt region
(λ
= 1.3
μτη) ,
Sov. Tech.
Phys. Lett.
16 (1990) 821-823 ........................ 557
InAsSbP
V-13. A.
N. Baranov,
A.
N.
Imenkov,
0.
P. Kapranchik,
Valer.
V.
Negreskul, A. G. Chernyavskii, V. V. Sherstnev, and Yu. P.
Yakovlev, Long-wavelength light-emitting diodes based on
InAsi-^SbsPy/InAs heterostructures
(λ
= 3.0-4.8
μτα
at
300
К)
with a wide-gap window ,
Sov.
Tech. Phys. Lett.
16 (1990)
618-620 .........................................
560
b. Photoreceivers
GaAs
V-14. Yu. A. Gol dberg, T. V. L vova, O. A. Mezrin, S. I. Troshkov, and
B. V. Tsarenkov, Short-wavelength photosensitivity of surface-
barrier GaAs structures ,
Sov. Phys.
Semicond.
24 (1990) 1143-
1146 ...........................................
563
V-15. S. D. Ganichev, K. Yu. Glukh, I.
N.
Kotel nikov,
N.
A. Mordovets,
A. Ya. Shul man, and I. D. Yaroshetskii, Fast point-size photode-
tector for submillimeter radiation ,
Sov.
Tech. Phys. Lett.
15
(1989) 290-291 ...................................
567
GaAlAs/GaAs
V-16. D. M. Butusov, G. G. Gotsadze, V. R. Larionov, B. S. Ryvkin, E.
M. Tanklevskaya, and F.
N.
Timofeev, Fast GaAs/AlGaAs p-i-n
photodetector in rectifier operation ,
5ου.
Tech. Phys. Lett.
15
(1989) 369-370 ...................................
V-17. V. I. Polyakov, P. I. Perov, M. G. Ermakov, O.
N.
Ermakova, V.
G. Mokerov, and
В. К.
Medvedev, Photoelectric characteristics of
multilayer
Р+-І-П+
GaAs-AlGaAs quantum-well structures ,
Sov.
Phys. Semicond.
24 (1990) 1253-1256..................
InGaAsSb
V-18. I. A. Andreev, M. A. Afrailov,
A. N. Baranov,
S. G.
Konmkov,
M.
A. Mirsagatov, M. P. Mikhailova, O.
V.
Sałata,
V. B. Umanskii,
G. M. Filaretova, and Yu. P. Yakovlev, Ultrafast GalnAsSb p-i-n
photodiode
for the
spectral
interval
1.5-2.3
jim ,
Äw.
Tech. Phys.
Lett.
15 (1989) 253-254 .............................
V-19.
I.
A. Andreev, M. A. Afrailov, A.
N. Baranov,
N. N.
Mar mskaya,
M. A. Mirsagatov, M. P. Mikhailova, and Yu. P. Yakovlev, Low-
noise avalanche photodiodes
with separated
absorption and multi¬
plication
regions for the
spectral
interval
1.6-2.4
/m ,
Sov.
Tech.
Phys.
Lett.
15 (1989) 692-694 ........................
XX
InAsSbP
V-20.
Ι. Α.
Andreev,
Μ. Α.
Afrailov,
A. N. Baranov,
M. P. Mikhaïlova,
K. D. Moiseev,
I.
N.
Timchenko,
V.
E. Shestnev,
V.
E. Umanskii,
and Yu. P. Yakovlev, Uncooled InAs/InAsSbP photodiodes
,
Sov.
Tech. Phys. Lett.
16 (1990) 135-137 ...................
58°
Other Semiconductors
V-21. A.
I. Malik, V.
A. Grechko, and
V.
E. Anikin,
Threshold detec¬
tors of
short-
wavelength
radiation
based
on III-V Schottky diodes
,
Sov. Phys.
Tech. Phys.
34 (1989) 1289-1290 ............. 583
Section
VI. OTHER SEMICONDUCTOR
DEVICES
......... 585
Si
VI-1.
V.
A. Kuz min, A. S. Kyuregyan, T. T. Mnatsakanov, and L.
I.
Pomortseva,
Fundamental physical
limitations on
the parameters
of power semiconductor devices , Radiotekhnika
i Elektronika
(in
Russian)
34 (1989) 609-617;
Sov. J.
Commun. Technol
Electron.
34 (1989) 4-11 ....................................
587
VI-2. A. F. Vil yanov, Yu. V. Vyzhigin, B.
N.
Gresserov, V. V. Eliseev,
V. M. Likunova, S. A. Maksutova, and
N.
A. Sobolev, Large-area
high-voltage avalanche diode structures ,
Sov. Phys.
Tech. Phys.
34 (1989) 1184-1185 ................................
595
VI-3. V. M. Voile, V. B. Voronkov, I. V. Grekhov, and V. A. Kozlov,
Direct bonding of silicon in a non-dustfree environment ,
Sov.
Tech. Phys. Lett.
16 (1990) 668-669 .................... 597
SiC
VI-4. M. M. Anikin, P.
A. Ivanov,
A. L. Syrkin, B. V. Tsarenkov, and
V. E. Cheinokov,
SiC-öH
field-effect transistor with record high
transconductance for silicon carbide transistors
,
Sov.
Tech. Phys.
Lett.
15 (1989) 636-638 ............................. 599
VI-5. V. A. Dmitriev, L. M. Kogan, Ya. V. Morozenko, B. V. Tsarenkov,
V. E. Cheinokov, and A. E. Cherenkov, Violet-Ught-emitting SiC-
4H diodes ,
Sov. Phys.
Semicond.
23 (1989) 23-25 ......... 602
VI-6. V. A. Dmitriev, L. M. Kogan, Ya. V. Morozenko, V. E. Chei¬
nokov, aad A. E. Cherenkov, A light-emitting diode with
Хтлх ~
398
nm , Sov.
Tech. Phys. Lett.
16 (1990) 828 ............ 605
VI-?. B.
I. Vishnevskaya, V. A. Dmitriev, L. M. Kogan, Ya. V. Moro¬
zenko, V. E. Cheinokov, and A. E. Cherenkov, Green
SiC
-бН
light-
emitting diodes ,
Sov.
Tech. Phys. Lett.
16 (1990) 908-909 ... 606
XXI
VI-8. Yu. A.
Vodákov, E. N. Mokhov, A. D. Semenov, A. L. Roenkov,
and V. I. Sokolov,
Violet
light-emitting diodes based on heteroepi-
taxial
öH/ffl-SiC (Ga, N)
layers, grown by the sublimation sand¬
wich method ,
Sov.
Tech. Phys. Lett.
16 (1990) 528-529 ..... 608
Other Semiconductors
VI-9. A. I. Malik and
G. G.
Grushka, Self-calibrated
radiometrie IR
photodiode
based on the defect semiconductor Hg3ln2Te6 for the
spectral range
0.85-1.5
μηι ,
Sov.
Phys. Tech. Phys.
35 (1990)
1227-1228 ....................................... 610
Section
VII.
BOOK REVIEWS (by
V. I. Kozub)
............. 612
VII-l. Injection Lasers in Data Transmission and Processing Systems,
Sov. Phys.
Semicond.
23 (1989) 240 ................... 615
VII-2. Image Conversion in Semiconductor-Insulator Structures by Yu.
D.
Dumarevskiï,
N.
F. Kovtonyuk, and A. M. Savin,
Sov. Phys.
Semicond.
23 (1989) 240-241 ........................ 615
VII-3.
Electronic Processes on Semiconductor Surfaces Under Chemi-
sorption Conditions by
F. F. Vol kenshteïn,
Sov. Phys.
Semi¬
cond.
23 (1989) 241 ............................... 616
VII-4. Solar Cells by M. M.
Kołtun,
SOt;. Phys.
Semicond.
23 (1989)
241 ........................................... 616
VII-5. Physics and Materials Science of Semiconductors with Deep Lev¬
els, Ed.
V. I. Fistuľ, Sov. Phys.
Semicond.
23 (1989) 241 ... 616
VII-6. Fundamental Problems in Ion Implantation,
Sov. Phys.
Semi¬
cond.
23 (1989) 241-242 ............................ 617
VII-7. Semiconductors and Heterojunctions, Ed. A. I. Rozental ,
Sov.
Phys. Semicond.
23 (1989) 242 ....................... 617
VII-8. Electrons in Semiconductors, No.
6,
Electron Structure and Op¬
tical Spectra of Semiconductors, Ed. Yu. Pozhela,
Sov. Phys.
Semicond.
23 (1989) 243............................ 617
VII-9. Determination of the Drift Velocity in Solids by A. Yu. Dargis,
Sov. Phys.
Semicond.
23 (1989) 584 ................... 618
VII-10.
Acoustoelectronic Methods for Investigation of Semiconductor
Surfaces by V. A. V yun, A. V. Rzhanov, and I. B. Yakovkin,
Sov. Phys.
Semicond.
23 (1989) 584 ................... 618
VII-l
1.
Physical Properties of Irradiated Silicon by
M. A. Zaïkovskaya, M.
Karimov, and
Z.
M. Khakimov et ai,
Sov. Phys.
Semicond.
23
(1989) 585...................................... 618
VII-12.
Semiconductor
Devices
vritíi
Ambipolar Conduction
by V. B.
Kvaskov, Sov. Phys. Semicond.
23 (1989) 585 ............ 618
V1I-13. Detection Properties of Infrared Systems by P. A. Bogomolov, V.
I. Sidorov, and
I. F. Usoľtsev, Sov. Phys.
Semicond.
23 (1989)
586 ........................................... 619
VII-14. Electrical Conductivity of Narrow-gap Semiconductors, (Electrons
in Semiconductors, Vol.
7)
by A. Krotkus and
Z. Dobrovoľskis,
Sov. Phys.
Semicond.
23 (1989) 705 ................... 619
XXII
VII-lö.
Physics of Metal-Doped Semiconductor Surfaces by V. E. Pri-
machenko and
O. V. Snitko, Sov. Phys.
Semicond.
23 (1989)
705-706 .........................................
619
VII-16.
Paramagnetic Resonance in Semiconductors by S. I. Rembeza,
Sov. Phys.
Semicond.
23 (1989) 1063 .................. 620
VII-17. Mercury
Sulfide;
Preparation and Properties by B.
F.
Bilen kiï
and
A. K. Filatova, Sov. Phys.
Semicond.
23 (1989) 1303 ... 620
VII-18.
Introduction to Physicochemistry of Ferromagnetic Semiconduc¬
tors by V. G. Bamburov, A. S. Borukhovich, and A. A.
Samokhvalov,
Sov. Phys.
Semicond.
23 (1989) 1304-1305------ 620
VII-19. Electronics of SiO2 Layers on Silicon by A. P. Barabin, V. V.
Bulavinov, and P. P. Konorov,
Sov. Phys.
Semicond.
23 (1989)
1307...........................................
621
VII-20. Complex Semiconductors (Collection),
Sov. Phys.
Semicond.
23
(1989) 1308 ..................................... 621
¥11-21.
Indium Phosphide in Semiconductor Electronics, Ed. S.
N.
Radautsan,
Sov. Phys.
Semicond.
23 (1989) 1308 ......... 622
VII-22. Theory of Radiation Effects in Semiconductors by V. A. Telezhkin,
Sov. Phys.
Semicond.
24 (1990) 594 ................... 622
VII-23. Fundamentals of Reliability of Semiconductor Devices and Inte¬
grated
Microcircuits
by A. A. Chernyshev,
Sov. Phys.
Semicond.
24 (1990) 595 .................................... 623
VII-24. Synthetic Epitaxy as a Promising Technology for Microelectronics
Components by E. I. Givargizov,
Sov. Phys.
Semicond.
24 (1990)
596 ........................................... 623
VII-25. Semiconductor Sensor Potentiometric Components by A.
N.
Marchenko, S. V. Svechnikov, and
A. K. Smovzh, Sov. Phys.
Semicond.
24 (1990) 599-600 ........................ 624
VII-26. Methods for the Investigation of Properties of Liquid Metals and
Semiconductors by V. M. Glazov and M.
Wobst,
Sov. Phys.
Semi¬
cond.
24 (1990) 600 ............................... 624
VII-27. Phase Equilibria between Phosphorus, Arsenic, Antimony, and
Bismuth by A. Ya.
Ugaï,
E. G. Goncharov, G. V.
Semenova,
and V. B. Lazarev,
Sov. Phys.
Semicond.
24 (1990) 600..... 625
VII-28.
Fluctuation Phenomena in Semiconductors under Nonequilibrium
Conditions by V. Bareikis, R. Katilyus, and R. Milyushite,
Sov.
Phys. Semicond.
24 (1990) 1179 ...................... 625
VII-29. Cooperative and Nonequilibrium Processes in a System with a High
Density of
Excitons
by
V. A. Moskaienko, Sov. Phys.
Semicond.
24 (1990) 1180 ................................... 626
VII-30.
High-Frequency Properties of
Superlattice
Semiconductors by F.
G. Bass, A. A. Bulgakov, and A. P. Tetervov,
Sov. Phys.
Semi¬
cond.
24 (1990) 1181 .............................. 626
УІІ-ЗІ.
Liquid Phase Epitaxy of Silicon by L. V. Kozhitov, V. V. Lipatov,
A. S. Timoshin, and M. P. Volkov,
Sov. Phys.
Semicond.
24
(1990) 1181 ..................................... 627
VII-32. Semiconductor and Semimetal
Microconnections
by A. M. Ioshter
and B. P. Kotrubenko,
Sov. Phys.
Semicond.
24 (1990) 1381 . 627
XXIU
VII-33.
Radiation Stability of Silicon by
N.
V. Kuznetsov and G. G.
Solov ev,
Sov.
Phys. Semicond.
24 (1990) 1382 ........... 628
VII-34. Semiconductor Detectors in Experimental Physics, Ed. Yu. K.
Akimov,
Sov. Phys.
Semicond.
24 (1990) 1382............ 628
VII-35. Modeling of Integral Microtechnology, Devices, and Circuits by A.
N.
Bubennikov,
Sov. Phys.
Semicond.
24 (1990) 1382 ...... 629
VII-36. Materials Science of Narrow-Gap and Layer Semiconductors,
Sov.
Phys. Semicond.
24 (1990) 1383 ...................... 629
VII-37.
Surface Polaritons in Semiconductors and Insulators by
N.
L.
Dmitruk, V. G. Litovchenko, and V.
L.
Strizhevskiï,
Sov. Phys.
Semicond.
24 (1990) 1383-1384....................... 630
VII-38. Semiconducting Silicon and Germanium Phosphides and Ar¬
senides by E. G. Goncharov,
Sov. Phys.
Semicond.
24 (1990)
1384........................................... 630
VII-39. Piezoresistance Effect in Lead and Bismuth
Chälcogenides,
Part I
by
É.
A. Abdullaev and
N.
Kh. Yuldashev,
Sov. Phys.
Semicond.
24 (1990) 1384-1385............................... 631
VII-^40. Physics of Fast-Response Transistors by Yu. Pozhela,
Sov. Phys.
Semicond.
24 (1990) 1385 ........................... 631
INDEX
............................................... 633
|
| any_adam_object | 1 |
| building | Verbundindex |
| bvnumber | BV035312243 |
| callnumber-first | Q - Science |
| callnumber-label | QC611 |
| callnumber-raw | QC611 |
| callnumber-search | QC611 |
| callnumber-sort | QC 3611 |
| callnumber-subject | QC - Physics |
| ctrlnum | (OCoLC)635084078 (DE-599)BVBBV035312243 |
| format | Book |
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| geographic | Sowjetunion Sowjetunion (DE-588)4077548-3 gnd |
| geographic_facet | Sowjetunion |
| id | DE-604.BV035312243 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T21:31:02Z |
| institution | BVB |
| isbn | 9810215797 |
| language | English Russian |
| lccn | 90048849 |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-017116969 |
| oclc_num | 635084078 |
| open_access_boolean | |
| owner | DE-355 DE-BY-UBR |
| owner_facet | DE-355 DE-BY-UBR |
| physical | XXIII, 638 S. Ill., graph. Darst. |
| publishDate | 1995 |
| publishDateSearch | 1995 |
| publishDateSort | 1995 |
| publisher | World Scientific |
| record_format | marc |
| spelling | Best of Soviet semiconductor physics and technology, 1989-1990 edit. Mikhail Levinshtein ... Singapore [u.a] World Scientific 1995 XXIII, 638 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Includes bibliographical references and index Semiconductors Semiconductors Research Soviet Union Halbleiterphysik (DE-588)4113829-6 gnd rswk-swf Sowjetunion Sowjetunion (DE-588)4077548-3 gnd rswk-swf Halbleiterphysik (DE-588)4113829-6 s Sowjetunion (DE-588)4077548-3 g DE-604 Levinštein, Michail E. Sonstige oth Digitalisierung UB Regensburg application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=017116969&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Best of Soviet semiconductor physics and technology, 1989-1990 Semiconductors Semiconductors Research Soviet Union Halbleiterphysik (DE-588)4113829-6 gnd |
| subject_GND | (DE-588)4113829-6 (DE-588)4077548-3 |
| title | Best of Soviet semiconductor physics and technology, 1989-1990 |
| title_auth | Best of Soviet semiconductor physics and technology, 1989-1990 |
| title_exact_search | Best of Soviet semiconductor physics and technology, 1989-1990 |
| title_full | Best of Soviet semiconductor physics and technology, 1989-1990 edit. Mikhail Levinshtein ... |
| title_fullStr | Best of Soviet semiconductor physics and technology, 1989-1990 edit. Mikhail Levinshtein ... |
| title_full_unstemmed | Best of Soviet semiconductor physics and technology, 1989-1990 edit. Mikhail Levinshtein ... |
| title_short | Best of Soviet semiconductor physics and technology, 1989-1990 |
| title_sort | best of soviet semiconductor physics and technology 1989 1990 |
| topic | Semiconductors Semiconductors Research Soviet Union Halbleiterphysik (DE-588)4113829-6 gnd |
| topic_facet | Semiconductors Semiconductors Research Soviet Union Halbleiterphysik Sowjetunion |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=017116969&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
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