III-nitride devices and nanoengineering:
Gespeichert in:
| Format: | Buch |
|---|---|
| Sprache: | English |
| Veröffentlicht: |
London
Imperial College Press
2008
|
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | XIV, 462 S. Ill., graph. Darst. |
| ISBN: | 1848162235 9781848162235 |
Internformat
MARC
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| 020 | |a 1848162235 |9 1-84816-223-5 | ||
| 020 | |a 9781848162235 |9 978-1-84816-223-5 | ||
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| 245 | 1 | 0 | |a III-nitride devices and nanoengineering |c Zhe Chuan Feng ed. |
| 264 | 1 | |a London |b Imperial College Press |c 2008 | |
| 300 | |a XIV, 462 S. |b Ill., graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 650 | 4 | |a Semiconductors / Materials | |
| 650 | 4 | |a Gallium nitride | |
| 650 | 4 | |a Nanotechnology | |
| 650 | 4 | |a Gallium nitride | |
| 650 | 4 | |a Nanotechnology | |
| 650 | 4 | |a Semiconductors |x Materials | |
| 700 | 1 | |a Feng, Zhe Chuan |e Sonstige |4 oth | |
| 856 | 4 | 2 | |m Digitalisierung UB Bayreuth |q application/pdf |u http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=017096339&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |3 Inhaltsverzeichnis |
| 999 | |a oai:aleph.bib-bvb.de:BVB01-017096339 | ||
Datensatz im Suchindex
| _version_ | 1804138587984232448 |
|---|---|
| adam_text | CONTENTS
Preface
v
Chapter
1
An Overview of the Development of Major Light Sources:
From Light Bulbs to Solid State Lighting
Y. S. Liu
1.
Introduction
1
1.1
Major milestones in the development of light sources
2
2.
Incandescence light bulbs
4
3.
Fluorescence light
6
4.
Coherent light sources: semiconductor lasers
7
5.
GaN-based blue and white LED
8
6.
DOE
ALITE
1995 10
7.
Japan MITI s 21st Century Solid State Lighting Project
1998 12
8.
USA Next Generation Lighting Initiative Alliance (NGLIA)
14
9.
China s National SSL Program
2006 15
10.
Taiwan s solid state lighting program
16
10.1
GaN-based solid state lighting research
16
10.2
Next Generation Semiconductor Lighting Research and
Development Consortium
(2002-2005) 17
11.
Conclusion
18
Chapter
2
High Pressure Bulk Crystal Growth of (Ga,Al)N
P.
Geiser,
J.
Jun,
В.
Batlogg and J. Karpinski
1.
Introduction
21
2.
The group-Ill nitrides A1N, GaN and InN
23
2.1
Crystal structure
23
2.2
Material properties, defects and dopants
24
2.3
Direct synthesis of group-HI nitrides
30
3.
Growth of group-Ill nitride bulk single crystals
33
3.1
High nitrogen pressure apparatus for crystal growth
(HNPSG)
34
3.2
Cubic anvil cell for ALGa^N crystal growth (CAC)
37
4.
Results and discussion
39
4.1
AljGa^N bulk single crystals, growth results
39
viii Contents
4.2
Material characterization
41
4.3 Parameters
influencing the
Al
content in AlrGa,.vN
45
4.4
Suppression of crystal growth in Ga|_,Alv. alloys with
y
> 0.01 48
4.5
GaN bulk single crystals
50
5.
Conclusions and outlook
51
Chapter
3
Structural and Optical Investigation of InGaN/GaN
Multiple Quantum Well Light Emitting Diodes Grown by
Metalorganic Chemical Vapor Deposition
Z.
С
Feng, J. R. Yang, A. G. Li and I. T. Ferguson
1.
Introduction
58
2.
Experimental
59
3.
Structural properties of InGaN/GaN MQWs
60
3.1
High resolution X-ray diffraction (HRXRD)
60
3.2
High resolution transmission electron microscopy
(HRTEM)
62
3.3
High-angle annular dark field (HAADF) images
63
4.
Optical properties of InGaN/GaN MQW
LEDs 64
4.1
Temperature dependent
photoluminescence
64
4.2
PL band shins and quantum efficiency
65
4.3
Excitation-power-dependent
photoluminescence
of
InGaN/GaN green LED wafer
66
4.4
Different
Т
-behavior of
photoluminescence
from
InGaN/GaN green and blue LED wafers
69
5.
Special electron microscopy of InGaN/GaN MQWs
72
5.1
V-shape defects
72
5.2
ТЕМ
digital analysis of lattice images
(DALI)
73
5.3
Different
ТЕМ
Studies on InGaN-based
LEDs 74
6.
Special luminescence spectroscopy of InGaN/GaN MQWs
75
6.1
Photoluminescence
excitation (PLE) spectroscopy
75
6.2
PLE fitting and quantum confined Stokes effect
77
6.3
Temperature dependent time resolved
photo-luminescence
78
6.4
Decay time versus temperature
81
6.5
Detection energy dependent time resolved
Photoluminescence
82
7.
Summary
83
Contents ix
Chapter
4 MOCVD
Growth and Efficiency Improvement for Ultraviolet
Light Emitting Diodes
S. J. Park and M. K. Kwon
1.
Introduction
89
2.
Issue of InGaN, AlInGaN, AlGaN material system
90
2.1
InGaN
90
2.2
AlInGaN
91
2.3
AlGaN layer
92
3.
Substrate issue
93
3.1
Homoepitaxy on GaN substrate
93
3.2
A1N substrate
97
4.
Defect control of epi-layer
98
4.1
Epitaxial lateral over-growth (ELOG)
98
4.2
Delta doping
99
4.3
Facet control technique
100
4.4 Superlattice
buffer
103
5.
Internal quantum efficiency
104
5.1
Band offset between well and barrier layer
105
5.2
Pulsed atomic layer epitaxy (PALE)
107
5.3
Ga droplet layer
109
5.4
Si delta doped barrier layer
111
6.
External quantum efficiency
112
6.1
Patterned sapphire substrate
(PSS)
113
6.2
Mesh electrode
114
6.3
DBR
114
6.4
Photonic crystal (PC)
115
6.5
PEC etching (phtoelectrochemical etching)
118
7.
Summary
121
Chapter
5
Fabrication of GaN Light Emitting Diodes by
Laser-off
Technique
С
F. Chu,
J.
T. Chu, H.
С. Кио
and S.
С.
Wang
1.
Introduction
127
2.
Current
issues
of conventional LED
129
2.1
Thermal stable metallization of P-type ohmic contact
129
2.2
Growth substrate
130
2.3
Light output power
131
2.3.1
Emitting area of GaN
LEDs 131
2.3.2
The reflectivity of GaN/material interface
134
χ
Contents
2.4
Laser lift-off setup and process
conditions
134
2.4.1
Laser system
134
2.4.2
Laser interaction on GaN material
136
2.4.3
Thermal model of laser interactions
139
2.4.4
LLO process
141
3.
Major considerations and approaches for LLO of GaN
LEDs 144
3.1
Laser energy requirements and modification
144
3.2
Selection of substrate and bonding metal
145
3.3
Two types of LLO-LEDs configurations
148
3.3.1
P-side up GaN LLO-LEDs
148
3.3.2
P-side down GaN LLO-LEDs
148
4.
Fabrication of LLO-LEDs
149
4.1
Fabrication of freestanding P-side up GaN LLO-LEDs
on conductive substrate
149
4.2
Fabrication steps of P-side down LLO-LEDs on Cu
151
4.3
Performance of P-side down LLO-LEDs on Cu
152
Chapter
6
High-Resolution Electron Microscopy Observations of
GaN-Based Laser Diodes
M. Shiojiri
1.
Introduction
159
2.
HAADF-STEM imaging
161
3.
Structural and compositional analysis of MQW InGaN/GaN
layers and strained AlGaN/GaN superlattices
168
3.1
MQW InGaN/GaN layers
170
3.2
Strained AlGaN/GaN superlattices
178
Chapter
7
Growth and Development of Ill-Nitride Photodetectors
U. Chowdhury, C. J. Collins and P. Li
1.
Introduction
190
1.1
Applications
190
1.2
Suitability
191
1.3
Types of photodetectors
192
1.4
Performance criteria
195
2.
Visible-blind photodetectors
197
2.1
Early work
197
2.2
AlGaN based devices
-
towards solar-blindness
202
2.3
Devices grown on Si substrates
203
2.4
Avalanche detectors and
phototransistors
204
Contents xi
2.5
Vacuum
UV
performance
206
2.6
Other miscellaneous works
207
3.
Solar-blind photodetectors
209
3.1
Schottky devices and top-illuminated p-i-n devices
209
3.2
Back-illuminated p-i-n devices and focal-plane array
211
4.
Conclusion
215
Chapter
8
Laser Diodes Grown on Bulk GaN Substrate
P.
Perlin,
M.
Leszczyński,
P. Prystawko,
M.
Boćkowski,
I. Grzegory,
C. Skierbiszewski and T.
Suski
1.
Introduction
223
2.
GaN
substrates for laser diodes applications
226
2.1
High nitrogen pressure solution growth method and its
experimental set up
228
2.2
Habit and morphology of HNP-GaN crystals grown
without seeding
230
2.3
Seeded growth by HNPS method
231
2.4
HVPE growth on HNP-GaN crystals
232
3.
Homoepitaxial MOVPE growth of laser structures on bulk
GaN substrates
232
4.
Laser diodes grown on bulk GaN by molecular beam epitaxy
235
5.
Performance of nitride laser diodes grown on bulk gallium
nitride substrates
239
5.1
Overview
239
5.2
High-pressure grown GaN substrates for the future
generation of high power laser diodes
240
6.
Crystallographic defects in laser diode structures
243
6.1
Mismatch problem of AlGaN layers
243
6.2
Mg-related defects
245
6.3
In-related defects
246
7.
Reliability of nitride laser diodes
246
Chapter
9
Ill-Nitride Lighting Emitting Diodes on Si
N.
С
Chen and
С
F.
Shih
1.
Introduction
253
2.
Growth
254
2.1
Challenge of growing GaN on Si
254
2.2
Nucleation layers
256
2.3
Control of stress and reduction of dislocations
259
Contents
3.
Recent
development of the
LEDs
on Si
264
4.
Conclusion
276
ptei
r
10
Nitride
Microdisplay
and Micro-Scale Light Emitting
Diode Arrays
H. W.
Choi
1.
Introduction
280
2.
Light extraction in nitride materials
281
3.
Micron-scale light emitting diodes
282
4.
Micro-LED
processing
285
5.
Micro-displays
287
6.
Interconnected micro-LEDs
288
7.
Micro-optics and its integration to micro-LEDs
293
8.
Novel geometry and configuration of micro-LEDs
295
9.
Applications of micro-LED arrays
298
10.
The future of micro-LEDs
300
Chapter
11
Ill-Nitride Films and Devices on Lithium Metal Oxides
by Molecular Beam Epitaxy
G. Namkoong, S. Huang and A. Doolittle
1.
Introduction
305
2.
Ill-Nitride optoelectronic devices on LiGaO2
306
2.1
Lithium
gallate
(LiGaO2) substrates
306
2.2
Polarity
308
2.3
Strain in Ill-nitrides on LiGaO2
309
2.4
Ill-nitrides on LiGaO-,
315
2.5
State of art MSM devices on LiGaCb
316
3.
Ill-Nitride power transistor integration onto ferroelectric
materials
320
3.1
Integration of Ill-nitride based amplifiers/drivers on
optical modulators
320
3.2
Crystalline relationship between Ill-nitrides and
LiNbCyLiTaCb
321
3.3
Surface preparation
325
3.4
Surface stability of LiNbO3 and LiTaO3
327
3.5
Polarity
328
3.6
AlGaN/GaN power transistor integration on LiNbO3
331
4.
Conclusions and outlook
333
Contents xiii
Chapter
12 III-Nitride
Light-Emitting Devices on Patterned Sapphire
Substrates
D. S. Wuu, W. K. Wang and R. H. Horng
1.
Introduction
337
2.
Experimental details
339
2.1
Fabrication of dry-etched patterned sapphire substrates
339
2.2
Fabrication of wet-etched patterned sapphire substrates
340
3.
Results and discussion
343
3.1
Characterization of nitride-based
LEDs
grown on
dry-etched patterned sapphire substrates
343
3.2
Characterization of nitride-based
LEDs
grown on
wet-etched patterned sapphire substrates
349
3.3
Characteristics of flip-chip InGaN-based
LEDs
on
patterned sapphire substrates
353
3.4
Defect reduction and efficiency improvement of
near-UV emitters via laterally overgrowth on
GaN/patterned sapphire templates
357
4.
Conclusions and outlook
362
Chapter
13
Bandgap
Engineering of III-Nitride Devices on
Low-Defect Substrates
S. Yu. Karpov
1.
Introduction
367
2.
Low-defect GaN and A1N substrates
371
3.
Light-emitting diodes and laser diodes
374
3.1
Factors controlling non-radiative carrier recombination in
Ill-nitride heterostructures
374
3.2
Indium-free light-emitting diodes with a thick active
region
375
3.3
Effect of crystal polarity on light-emitting diode
operation
378
3.4
Carrier confinement in the laser diodes
381
4.
Field-effect transistors
385
4.1
Threading dislocation effect on two-dimensional
electron mobility
385
4.2
Polarization dipoles in transistor heterostructures
386
4.3
Transistors on A1N substrate and double-heterostructures
388
4.4
A prototype of an N-polar transistor on A1N
389
5.
Summary
391
xiv
Contents
Chapter
14
Ill-Nitride Nano-Materials: Growth and Properties
A. B.
Djurišić,
Χ. Μ.
Cai
and
M. H. Xie
1.
Introduction
399
2.
Boron nitride nanostructures
401
3.
Gallium
nitride
nanostructures
404
4.
Aluminum nitride
nanostructures
412
5.
Indium nitride
nanostructures
414
6.
Ternary nitride alloy nanostructures and Ill-nitride
nano-heterostructures
417
7.
Conclusions and outlook
418
Chapter
15
Recent Trends in Indium Nitride Nanomaterials
A. Ganguly, K. H. Chen, L. C. Chen and S. Chattopadhyay
1.
Introduction
431
2.
Synthesis of Indium Nitride nanomaterials
432
2.1
Thermal chemical vapour deposition (CVD)
433
2.1.1
Catalyst-assisted growth
434
2.1.2
Catalyst-free growth
438
2.2
Molecular beam epitaxy (MBE) and plasma-assisted
MBE
441
2.3
Hydride vapour phase epitaxy (HVPE)
443
2.4
Metalorganic vapour phase epitaxy (MOVPE)
444
2.5
Chemical beam epitaxy (CBE)
445
2.6
Metalorganic chemical vapour deposition (MOCVD)
445
2.7
Solvothermal methods
448
3.
Optical properties
449
3.1
Photoluminescence
449
3.2
Raman spectroscopy
451
4.
Electrical properties
453
5.
Applications
455
5.1
Sensors
455
6.
Concluding remarks
457
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| id | DE-604.BV035291291 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T21:30:34Z |
| institution | BVB |
| isbn | 1848162235 9781848162235 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-017096339 |
| oclc_num | 271771204 |
| open_access_boolean | |
| owner | DE-703 |
| owner_facet | DE-703 |
| physical | XIV, 462 S. Ill., graph. Darst. |
| publishDate | 2008 |
| publishDateSearch | 2008 |
| publishDateSort | 2008 |
| publisher | Imperial College Press |
| record_format | marc |
| spelling | III-nitride devices and nanoengineering Zhe Chuan Feng ed. London Imperial College Press 2008 XIV, 462 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Semiconductors / Materials Gallium nitride Nanotechnology Semiconductors Materials Feng, Zhe Chuan Sonstige oth Digitalisierung UB Bayreuth application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=017096339&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | III-nitride devices and nanoengineering Semiconductors / Materials Gallium nitride Nanotechnology Semiconductors Materials |
| title | III-nitride devices and nanoengineering |
| title_auth | III-nitride devices and nanoengineering |
| title_exact_search | III-nitride devices and nanoengineering |
| title_full | III-nitride devices and nanoengineering Zhe Chuan Feng ed. |
| title_fullStr | III-nitride devices and nanoengineering Zhe Chuan Feng ed. |
| title_full_unstemmed | III-nitride devices and nanoengineering Zhe Chuan Feng ed. |
| title_short | III-nitride devices and nanoengineering |
| title_sort | iii nitride devices and nanoengineering |
| topic | Semiconductors / Materials Gallium nitride Nanotechnology Semiconductors Materials |
| topic_facet | Semiconductors / Materials Gallium nitride Nanotechnology Semiconductors Materials |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=017096339&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
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