Principles of physical vapor deposition of thin films:
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Buch |
| Sprache: | English |
| Veröffentlicht: |
Amsterdam [u.a.]
Elsevier
2006
|
| Ausgabe: | 1. ed. |
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | XI, 1160 S. Ill., graph. Darst. |
| ISBN: | 9780080446998 008044699X |
Internformat
MARC
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| 100 | 1 | |a SreeHarsha, Karnamadakala S. |d 1936- |e Verfasser |0 (DE-588)136880282 |4 aut | |
| 245 | 1 | 0 | |a Principles of physical vapor deposition of thin films |c K. S. Sree Harsha |
| 250 | |a 1. ed. | ||
| 264 | 1 | |a Amsterdam [u.a.] |b Elsevier |c 2006 | |
| 300 | |a XI, 1160 S. |b Ill., graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 650 | 7 | |a Couches minces |2 ram | |
| 650 | 7 | |a Dépôt en phase vapeur |2 ram | |
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| 999 | |a oai:aleph.bib-bvb.de:BVB01-017085022 | ||
Datensatz im Suchindex
| _version_ | 1804138571541512192 |
|---|---|
| adam_text | Contents
Acknolowdgements
xii
1.
INTRODUCTION
1
1.1.
Introduction
1
Problems 8
References
9
2.
EVAPORATION
11
2.1.
Process of Thin Film Formation by Evaporation
11
2.2.
Thermodynamics of Evaporation
11
2.2.1.
Equilibrium condition for phase transformation in
one-component systems
12
2.2.2.
Clausius-Clapeyron equation
14
2.2.3.
Source container interaction
28
2.2.4.
Changes in composition during alloy evaporation
40
2.2.5.
Stability of compounds and non-stoichiometry
49
2.2.6.
Chemical reactions and equilibrium
53
2.3
Kinetic Theory of Gases
58
2.3.1.
Calculation of pressure
59
2.3.2.
Distribution of molecular velocities
67
2.3.3.
Calculation of averages using the distribution function
73
2.3.4.
Maxwell velocity distribution function in a force field
76
2.3.5.
Number of molecules striking a surface
79
2.3.6.
Evaporation
84
2.3.7.
Effusion
88
2.3.8.
Emission characteristics of vapor sources
91
2.3.9.
Thermal transpiration
94
2.4.
Elementary Description of Collision Processes
95
2.4.1
Mean free path
%
2.4.2.
Mean time between collisions
98
2.4.3.
Collision frequency
100
2.4.4.
Colusión
cross section
101
2.5.
Classical Theory of Binary Collisions
105
2.5.1.
Kinematic theory of collisions
106
2.5.2.
Center of mass and relative position coordinates
112
vi
Contents
2.5.3. Motion
of a particle in a central field of force
114
2.5.4.
Equation of motion
115
2.5.5.
Classification of trajectories
120
2.5.6.
Impact parameter and angle of scattering
124
2.5.7.
Relationship between differential scattering cross section
and impact parameter and scattering angle
129
2.5.8.
Differential scattering cross section for columbic potential
132
2.5.9.
Center of mass to laboratory transformation of coordinates
134
Problems
138
References
141
3.
PLASMA STATE
145
3.1.
Introduction
145
3.2.
Plasma State
149
3.3.
Thermal and Non-Thermal Plasma
156
3.4.
Collisions in Plasma
160
3.4.1.
Excitation collisions
170
3.4.2.
Ionization collisions
178
3.4.3.
Charge exchange collisions
183
3.4.4.
Collisions involving metastables
186
3.4.5.
Recombination and attachment
188
3.4.6.
Dissociation
191
3.4.7.
Heterogeneous reactions
193
3.5.
Behavior of Plasma in Electric and Magnetic Fields
195
3.5.1.
Constant and uniform electric field, no magnetic field
197
3.5.2.
Constant and uniform magnetic field, no electric field
198
3.5.3.
Uniform electric and magnetic fields
203
3.5.4.
Non-uniform magnetic fields
207
3.5.5.
Drift velocity due to other fields
212
3.6.
Basic Equations in Cold Plasma
214
3.6.1.
Boltzmann equation
215
3.6.2.
Macroscopic averages
217
3.6.3.
Flux of macroscopic quantities
218
3.6.4.
Rate of change of macroscopic quantities
221
3.7.
Macroscopic Characterization of Plasma
224
3.8.
Collective Phenomena in Plasma
225
3.8.1
Shielding of a charge in a plasma
226
3.8.2.
Plasma parameter
230
3.8.3.
Diffusion of charges
233
3.8.4.
Plasma oscillations
238
3.8.5
Collision frequencies
240
3.9.
Waves in Cold Plasma
242
3.9.1.
Electrostatic waves
249
3.9.2.
Plasma waves in the presence of a magnetic field
251
Contents
vii
3.9.3. Plasma
waves at any angle to the imposed magnetic field
253
Problems
255
References
257
4.
COLD PLASMA DISCHARGES
259
259
260
270
278
290
294
297
301
302
305
310
317
325
332
335
342
349
355
360
362
5.
THERMAL EVAPORATION SOURCES
367
367
368
381
400
414
425
431
446
449
6.
GAS FLOW IN
ΤΗΓΝ
FILM PROCESSING SYSTEMS
453
6.1.
Introduction
453
6.2.
Specific Heat of Gases
454
6.3.
Transport Properties of Gases
458
6.3.1.
Viscosity
459
6.3.2.
Thermal conductivity
462
6.3.3.
Self diffusion
464
COLD
PLASMA DISCHARGES
4.1.
Introduction
4.2.
The Plasma Sheath
4.3.
Electron Emission from Surfaces
4.4.
Glow Discharge Plasma
4.4.1.
The positive column
4.4.2.
Paschen s criterion
4.4.3.
Cathode sheath
4.4.4.
The negative glow and Faraday dark space
4.4.5.
Characteristics of glow discharge
4.5.
DC Sheaths
4.6.
RF Discharges
4.6.1.
Circuit model for RF discharges
4.6.2.
Self-bias of RF electrodes
4.6.3.
Matching network
4.7.
Magnetrons
4.8.
Inductive Plasma Discharges
4.9.
Wave Heated Plasma Discharges
4.10.
Plasma Process Modeling
Problems
References
THERMAL EVAPORATION SOURCES
5.1.
Introduction
5.2.
Electrically Heated Sources
5.3.
Effusion and Free Jet Sources
5.4.
Sources Utilizing Electron Beam
5.4.1.
Emission of electrons from surfaces
5.5.
Arc Vapor Sources
5.6.
Pulsed Laser Ablation Sources
Problems
References
viii Contents
6.4.
Gas
Flow in Components
466
6.5.
Flow of Gases
474
6.5.1.
Gas flow regimes
475
6.5.2.
Viscous flow
478
6.5.3.
Slip flow
482
6.5.4.
Molecular flow
484
6.5.5.
Turbulent flow
489
6.6.
Generation of Vacuum
490
6.6.1.
Mechanisms for vacuum generation
491
6.6.2.
Positive displacement pumps
494
6.6.3.
Momentum transfer pumps
499
6.6.4.
Capture pumps
504
6.7.
Measurement of Pressure
512
6.7.1.
Force measuring gauges
513
6.7.2.
Energy transfer gauges
517
6.7.3.
Momentum transfer gauges
519
6.7.4.
Ionization gauges
521
6.7.5.
Partial pressure gages
523
Problems
530
References
532
7.
SPECIAL SOURCES
535
7.1.
Introduction
535
7.2.
Molecular Beam Evaporation
536
7.3.
Modified Evaporation Processes
548
7.4.
Sputter Deposition Processes
552
7.4.1.
Ion-solid Interactions
554
7.4.2.
Ion neutralization
563
7.4.3.
Sputtering Yields
566
7.4.4.
Linear cascade theory of sputtering
576
7.4.5.
Sputtering of multicomponent materials
582
7.4.6.
DC Glow discharge sputtering
585
7.4.7.
RF Sputtering
590
7.4.8.
Magnetron sputtering
594
7.4.9.
Reactive sputtering
597
7.5.
Ion Beam Sputtering
601
7.6.
Ionized Cluster Beam deposition
612
Problems
615
References
616
8.
GAS SOLID INTERACTIONS
619
8.1.
Introduction
619
8.2.
Pumping to Low Pressures
621
8.3.
Leakage
627
Contents ix
8.4.
Evaporation and condensation
632
8.5.
Thermodynamics of surfaces
635
8.6.
Adsorption
644
8.6.1.
Langmuir s adsorption
650
8.6.2.
Multilayer adsorption Model
655
8.7.
Modulated Beam Growth Methods
661
8.8.
Solubility of Gases in Solids
664
8.9.
Diffusion
668
8.10.
Permeation
673
8.11.
Desorption
676
8.12.
Stimulated Desorption
676
8.13.
Degassing
678
Problems
681
References
681
9.
NUCLEATION AND GROWTH OF FILMS
685
9.1.
Introduction
685
9.2.
Elastic Scattering
687
9.3.
Thermal Accommodation Coefficient
697
9.4.
Sticking Coefficient
701
9.5.
Motion of Adsorbed Atoms on the Surface
711
9.6.
Surface Energy of Solids
714
9.7.
Vapor Pressure Above a Cluster
718
9.8.
Mechanisms of Thin Film Formation
722
9.9.
Growth Forms of Crystalline Solids
727
9.10.
Atomic Structure of Surfaces
739
9.11.
Three Dimensional Nucleation
761
9.12.
Two Dimensional Nucleation
767
9.13.
Rate of Nucleation
769
9.14.
Atomistic Theory of Nucleation
773
9.15.
Kinetic Nucleation Theory
777
9.16.
Crystal Growth
780
9.16.1.
Normal mechanism of crystal growth
781
9.16.2.
Layer growth of faces
782
9.16.3.
Spiral Growth
786
9.16.4.
Growth by 2D Nucleation
787
9.17.
Coalescence
788
9.18.
Ripening
791
9.19.
Fimi
Growth and Microstracture
795
9.20.
Grains In Films
804
9.21.
Stresses in Thin Films
811
9.22.
Ostwald s Step Rule
821
Problems
822
References
826
χ
Contents
10.
EPITAXY
831
10.1.
Introduction
831
10.2.
Relationship Between Substrate and Epitaxial Layer
836
10.3.
Growth Morphology
840
10.4.
Structure and Energy of Epitaxial Interface
846
10.5.
Doping
856
10.6.
Ordering in Semiconductor Alloys
870
10.7.
Strained Layer Epitaxy
875
10.8.
Defects in Epitaxial Layers
882
10.9.
Diffusions in Epitaxial Structures
887
10.10.
Artificial Epitaxy
889
10.11.
Solid phase epitaxy
892
10.12.
Material Characterization
893
10.12.1.
Optical methods of characterization
895
10.12.2.
Photoluminescence spectroscopy
895
10.12.3.
Reflection high energy electron diffraction
897
10.12.4
Ellipsometry
902
10.12.5.
Transmission Electron Microscopy
904
Problems
907
References
908
11.
SUBSTRATE PREPARATION
911
11.1.
Introduction
911
11.2.
Contamination
913
11.3.
Cleaning Processes
921
11.4.
Cleavage In Ultra High Vacuum
926
11.5.
Ion Bombardment and Annealing
926
11.6.
Evaporation and Condensation of Films
929
11.7.
Solid/Solid Interfaces
930
11.8.
Chemical and Mechanical Planarization
931
11.9.
Substrate Surface Termination
936
11.10.
Substrate Temperature
936
11.11.
Characterization of Surface
939
11.11.1.
Photoelectron spectroscopy
940
11.11.2.
Auger electron spectroscopy
944
11.11.3.
Secondary ion mass spectroscopy
950
11.11.4.
Fourier Transform Infrared Spectroscopy
954
11.11.5.
Surface profiling
956
Problems
958
References
959
12.
STRUCTURE AND PROPERTIES OF FILMS
961
12.1.
Introduction
961
12.2.
Conducting Films
962
Contents xi
12.3. Semiconducting Films 971
12.4. Superconducting Films 982
12.5.
Magnetic
Films 993
12.6.
Dielectric
Films 1019
12.7. Ferroelectrics Films 1030
12.8.
Mechanical Properties of Thin Films
1041
12.9.
Optical Properties of Thin Films
1048
12.10.
Diffusion in Thin Films
1064
12.11.
Low dimensional structures
1067
Problems
1069
References
1071
13.
DRY ETCHING
1073
13.1.
Introduction
1073
13.2.
Chemical Volatilization
1081
13.3.
Loading effects
1087
13.4.
Ion Assisted Gas Surface Chemistry
1090
13.5.
Anisotropy In Etching
1095
13.6.
Passivation Of Sidewalls
1100
13.7.
Selectivity
1103
13.8.
Ion Beam Based Etching
1105
13.9.
Etching Reactor Configurations
1108
13.10.
Plasma Diagnostic and Process Control
1121
13.11.
Etching Induced Damage
1127
13.12.
Modeling of Dry Etching
1130
Problems
1133
References
1133
Index
1135
|
| any_adam_object | 1 |
| author | SreeHarsha, Karnamadakala S. 1936- |
| author_GND | (DE-588)136880282 |
| author_facet | SreeHarsha, Karnamadakala S. 1936- |
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| author_sort | SreeHarsha, Karnamadakala S. 1936- |
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| building | Verbundindex |
| bvnumber | BV035279796 |
| classification_rvk | UP 7550 |
| ctrlnum | (OCoLC)470008488 (DE-599)HBZHT015669890 |
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| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
| dewey-raw | 621.381 52 |
| dewey-search | 621.381 52 |
| dewey-sort | 3621.381 252 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Physik Elektrotechnik / Elektronik / Nachrichtentechnik |
| edition | 1. ed. |
| format | Book |
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| id | DE-604.BV035279796 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T21:30:18Z |
| institution | BVB |
| isbn | 9780080446998 008044699X |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-017085022 |
| oclc_num | 470008488 |
| open_access_boolean | |
| owner | DE-703 |
| owner_facet | DE-703 |
| physical | XI, 1160 S. Ill., graph. Darst. |
| publishDate | 2006 |
| publishDateSearch | 2006 |
| publishDateSort | 2006 |
| publisher | Elsevier |
| record_format | marc |
| spelling | SreeHarsha, Karnamadakala S. 1936- Verfasser (DE-588)136880282 aut Principles of physical vapor deposition of thin films K. S. Sree Harsha 1. ed. Amsterdam [u.a.] Elsevier 2006 XI, 1160 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Couches minces ram Dépôt en phase vapeur ram PVD-Verfahren (DE-588)4115673-0 gnd rswk-swf Dünne Schicht (DE-588)4136925-7 gnd rswk-swf Dünne Schicht (DE-588)4136925-7 s PVD-Verfahren (DE-588)4115673-0 s DE-604 Digitalisierung UB Bayreuth application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=017085022&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | SreeHarsha, Karnamadakala S. 1936- Principles of physical vapor deposition of thin films Couches minces ram Dépôt en phase vapeur ram PVD-Verfahren (DE-588)4115673-0 gnd Dünne Schicht (DE-588)4136925-7 gnd |
| subject_GND | (DE-588)4115673-0 (DE-588)4136925-7 |
| title | Principles of physical vapor deposition of thin films |
| title_auth | Principles of physical vapor deposition of thin films |
| title_exact_search | Principles of physical vapor deposition of thin films |
| title_full | Principles of physical vapor deposition of thin films K. S. Sree Harsha |
| title_fullStr | Principles of physical vapor deposition of thin films K. S. Sree Harsha |
| title_full_unstemmed | Principles of physical vapor deposition of thin films K. S. Sree Harsha |
| title_short | Principles of physical vapor deposition of thin films |
| title_sort | principles of physical vapor deposition of thin films |
| topic | Couches minces ram Dépôt en phase vapeur ram PVD-Verfahren (DE-588)4115673-0 gnd Dünne Schicht (DE-588)4136925-7 gnd |
| topic_facet | Couches minces Dépôt en phase vapeur PVD-Verfahren Dünne Schicht |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=017085022&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| work_keys_str_mv | AT sreeharshakarnamadakalas principlesofphysicalvapordepositionofthinfilms |