Chemical vapour deposition: precursors, processes and applications
Gespeichert in:
| Format: | Buch |
|---|---|
| Sprache: | English |
| Veröffentlicht: |
Cambrigde
RSC Publ.
2009
|
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | XV, 582 S. Ill., graph. Darst. |
| ISBN: | 9780854044658 |
Internformat
MARC
| LEADER | 00000nam a22000002c 4500 | ||
|---|---|---|---|
| 001 | BV035140470 | ||
| 003 | DE-604 | ||
| 005 | 20130620 | ||
| 007 | t | ||
| 008 | 081104s2009 ad|| |||| 00||| eng d | ||
| 020 | |a 9780854044658 |c Gb. : GBP 199.95 |9 978-0-85404-465-8 | ||
| 035 | |a (OCoLC)315856255 | ||
| 035 | |a (DE-599)BSZ283432527 | ||
| 040 | |a DE-604 |b ger | ||
| 041 | 0 | |a eng | |
| 049 | |a DE-703 |a DE-91G |a DE-634 | ||
| 084 | |a UP 7550 |0 (DE-625)146434: |2 rvk | ||
| 084 | |a FER 882f |2 stub | ||
| 084 | |a ELT 279f |2 stub | ||
| 245 | 1 | 0 | |a Chemical vapour deposition |b precursors, processes and applications |c ed. by Anthony C. Jones ; Michael L. Hitchman |
| 264 | 1 | |a Cambrigde |b RSC Publ. |c 2009 | |
| 300 | |a XV, 582 S. |b Ill., graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 650 | 0 | 7 | |a CVD-Verfahren |0 (DE-588)4009846-1 |2 gnd |9 rswk-swf |
| 655 | 7 | |0 (DE-588)4143413-4 |a Aufsatzsammlung |2 gnd-content | |
| 689 | 0 | 0 | |a CVD-Verfahren |0 (DE-588)4009846-1 |D s |
| 689 | 0 | |5 DE-604 | |
| 700 | 1 | |a Jones, Anthony C. |e Sonstige |4 oth | |
| 700 | 1 | |a Hitchman, Michael L. |e Sonstige |4 oth | |
| 776 | 0 | 8 | |i Erscheint auch als |n Online-Ausgabe |z 978-1-62198-703-1 |
| 856 | 4 | 2 | |m Digitalisierung UB Bayreuth |q application/pdf |u http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=016807859&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |3 Inhaltsverzeichnis |
| 999 | |a oai:aleph.bib-bvb.de:BVB01-016807859 | ||
Datensatz im Suchindex
| _version_ | 1804138124459114496 |
|---|---|
| adam_text | Contents
Chapter
1
Overview of Chemical Vapour Deposition
Anthony C. Jones and Michael L. Hitchman
1.1
Basic Definitions
1
1.2
Historical Perspective
2
1.3
Chemical Vapour Deposition Processes
4
1.3.1
Conventional CVD Processes
4
1.3.2
Variants of CVD
7
1.4
CVD Precursors
1
1
1.4.1
Precursor Requirements
1
1
1.4.2
Precursor Volatility
Π
1.4.3
Precursor Thermal Stability
14
1.4.4
Precursor Purity and Precursor Analysis
15
1.4.5
Precursor Purification Techniques
17
1.5
CVD Reactors
18
1.6
Materials Deposited by CVD and Applications
22
1.7
Materials Properties
22
1.7.1
Layer Morphology
22
1.7.2
Layer Properties
27
1.8
Postscript
33
References
33
Chapter
2
CVD Reactors and Delivery System Technology
Susan P. Krumdieck
2.1
CVD System Overview
37
2.1.1
CVD System Performance
38
2.1.2
Historical Perspective on Reactor Diversity
40
2.2
CVD Process Fundamentals
40
2.2.1
Research and Development of CVD Technology
42
2.2.2
Gas Dynamics and Flow Basics
42
2.2.3
Molecular and Transition Flow Regimes
44
2.2.4
High Vacuum CVD Reactor Deposition Model
47
Chemical Vapour Deposition: Precursors, Processes and Applications
Edited by Anthony
С
Jones and Michael L. Hitchman
£
Royal Society of Chemistry
2009
Published by the Royal Society of Chemistry, www.rsc.org
Contents
2.2.5
Viscous Flow Regime Convection Mass Transport
49
2.2.6
LPCVD Reactor Deposition Model
50
2.3
System Platform and Equipment Considerations
53
2.3.1
Contamination: Material Selection and Design
Considerations
54
2.3.2
Establishing the Vacuum: Pumps and Components
58
2.3.3
Pressure Measurement
65
2.3.4
Flow Control
67
2.3.5
Temperature Measurement
71
2.3.6
Heating Strategies
73
2.4
Conventional CVD Reactors
75
2.4.1
Research-scale Reactors
77
2.4.2
Tube Reactor
77
2.4.3
Showerhead and Planetary Reactors
80
2.5
Liquid Precursor Delivery and Process Control
83
2.5.1
Liquid Injection Delivery Systems
83
2.5.2
Aerosol and Spray Reactors
86
2.6
Deposition Control by Surface Processes
88
2.6.1
ALD Reactors
88
2.6.2
CBE Reactors
89
References
91
Chapter
3
Modeling CVD Processes
Mark D.
Aliendorf,
Theodore. M. Besmann, Robert J. Kee
and Mark T. Swihart
3.1
Introduction
93
3.2
Thermodynamic Modeling of CVD
95
3.2.1
Application of Thermochemical Modeling to Chemical
Vapor Deposition
95
3.2.2
Thermochemistry of CVD
95
3.2.3
Consideration of Non-stoichiometric/Solution Phases
97
3.2.4
Thermochemical Equilibrium Software Packages
101
3.2.5
Thermochemical Data and Databases
102
3.3
Reactor Modeling
103
3.3.1
Chemically Reacting Fluid Flow
103
3.3.2
Rate Controlling Processes
104
3.3.3
General Conservation Equations
104
3.3.4
Boundary and Initial Conditions
106
3.3.5
Computational Solution
108
3.3.6
Uniform Deposits in Complex Reactors
108
3.3.7
Reactor Design
108
3.4
Gas-phase Thermochemistry and Kinetics
112
3.4.1 Ab Initio
Methods for Predicting Gas-phase
Thermochemistry
113
3.4.2
Sources of Gas-phase Thermodynamic Data
119
3.4.3
Modeling Precursor Pyrolysis
119
3.5
Mechanism Development
125
3.5.1
Kinetic Regimes
125
Contents
3.5.2 Global versus
Elementary Mechanisms
126
3.5.3
Gas-phase Chemistry
127
3.5.4
Sources of Gas-phase Kinetics Information
129
3.5.5
Surface Chemistry
129
3.6
Particle Formation and Growth
141
3.6.1
Introduction
141
3.6.2
Modeling Approaches
141
3.6.3
Mechanisms of Particle Formation, Growth
and Transport
146
3.6.4
Particle Formation: Modeling Examples
149
3.6.5
Summary
150
References
15
1
Chapter
4
Atomic Layer Deposition
Mikko
Ritala
and
Jaakko Niinistö
158
158
159
161
167
167
167
170
175
181
182
182
185
187
188
188
190
191
191
192
192
192
197
197
197
197
198
198
199
199
199
200
200
4.1
Introduction
4.2
Basic Features of ALD
4.2.1
Principle and Characteristic Features of ALD
4.2.2
Limitations of ALD
4.2.3
Comparison of ALD and CVD
4.3
Precursor Chemistry
4.3.1
ALD Precursor Requirements
4.3.2
Precursor Types
4.3.3
Characterization of ALD Chemistry
4.4
ALD Reactors
4.4.1
Operation Pressure
4.4.2
Precursor Sources with Valving System
4.4.3
Reaction Chamber
4.4.4
Batch Reactors
4.4.5
Wall Temperature
4.4.6
Plasma Sources
4.4.7
Other Reactor Configurations
4.4.8
Process Control Devices
4.5
Applications of ALD
4.5.1
Thin Film Electroluminescent Displays (TFELs)
4.5.2
Magnetic Heads
4.5.3
Microelectronics
4.5.4
Protective Coatings
4.5.5
Solar Cells
4.5.6
Optical Applications
4.5.7
Heterogeneous Catalysts
4.5.8
Coatings on Powders
4.5.9
Photocatalysts
4.5.10
Coatings on Polymers
4.5.11
Micro-electro-mechanical Systems (MEMS)
4.5.12
Nanotechnology
4.6
Conclusions
References
Chapter
5
Basic Chemistry of CVD and ALD Precursors
Mohammad Azad Malik and Paul
O Brien
Contents
5.1
Introduction
5.2
Precursor Requirements for CVD
5.2.1
Precursor Purity
5.2.2
Precursor Reactivity
5.2.3
Volatility
5.2.4
Stability in Air
5.2.5
Toxicity
5.2.6
Synthesis
5.2.7
Environment and Cost
5.3
Metal Chalcogenides
5.3.1
Alternative Chalcogenide Precursors
5.3.2
Single-molecule Precursors
5.4
Metal Pnictides
5.4.1
III-V Materials
5.5
Metals
5.5.1
Precursor for Metals
5.5.2
CVD of Metals
5.6
Metal Oxides
5.6.1
Precursors
5.6.2
CVD of Metal Oxides
5.7
Chemistry of ALD Precursors
5.7.1
ALD Precursors
ALD Precursors for Oxides
ALD of Metals
Organometallic Precursors
Non-metal Precursors
Metal Nitrides
Metal Films and Plasma-ALD
5.7.2
5.7.3
5.7.4
5.7.5
5.7.6
5.7.7
References
207
207
207
208
208
208
208
208
208
209
209
211
230
230
234
234
235
237
237
240
245
245
247
249
250
252
253
253
254
Chapter
6
CVD of III-V Compound Semiconductors
Jae-Hyun Ryou, Ravi Kanjolia and Russell D. Dupuis
6.1
Fundamentals of III-V Compound Semiconductors
6.1.1
Characteristics of III-V Compound Semiconductors
6.1.2
Material Properties of III-V Compound
Semiconductors
6.2
Applications of III-V Compound Semiconductors
6.2.1
Photonic Device Applications
6.2.2
Electronic Device Applications
6.3
Fundamentals of CVD Processes for III-V Compound
Semiconductors
6.3.1
Historical Overview of MOCVD Technology
6.3.2
Chemical Reactions in MOCVD Growth
6.3.3
Thermodynamics, Kinetics and Hydrodynamics
of the MOCVD Process
272
273
279
279
280
285
286
286
287
290
Contents
6.3.4
Growth Mechanisms of the MOCVD Process
in a Reactor Chamber
292
6.4
MOCVD Reactor Systems
293
6.4.1
Safety Apparatus and System
294
6.4.2
Gas Delivery System
296
6.4.3
Growth Chamber
299
6.4.4
Exhaust System
301
6.5
Precursors Synthesis, Purification, Analysis and Delivery
302
6.5.1
Synthesis and Purification
302
6.5.2
Analysis
305
6.5.3
Vapor Phase Transport and Measurements
305
6.5.4
Condensed Phase Group V Precursors
307
6.6
MOCVD of Specific III-V Materials
309
6.6.1
GaAs-based Materials
309
6.6.2
InP-based Materials
310
6.6.3
GaSb-based Materials
311
6.6.4
GaN-based Materials
312
6.7
MOCVD in the Future
315
6.8
Summary and Conclusions
315
References
315
Chapter
7
Chemical Vapor Deposition of Metals: W,
Al, Cu
and
Ru
Bing
Luo and Wayne
L.
Glad/eller
7.1
Introduction
320
7.1.1
Deposition Chemistry
-
General Comments
320
7.1.2
Induction Periods, Selectivity,
Microstructure
and the
Critical Role of Nucleation
322
7.2
CVD of Tungsten
322
7.2.1
Deposition on Si and SiO2 from
WFń
323
7.2.2
WF6-H2 System
323
7.2.3
WFŔ-SiH4
System
324
7.2.4
Tungsten ALD
326
7.3
CVD of Aluminium
326
7.3.1
Precursors
327
7.4
CVD of Copper
331
7.4.1
Deposition from
Copper(ii)
Precursors
331
7.4.2
Deposition from
Copper(i)
Precursors
334
7.4.3
Copper ALD
336
7.5
Ruthenium CVD
337
7.5.1
Ruthenium CVD from Ru
ß-Diketonates 337
7.5.2
Ru(CO)5, Ru3(CO)i2 and other Precursors Containing
the CO Ligand
338
7.5.3
Ruthenium CVD from Sandwich or Half-sandwich
Precursors
340
7.5.4
Ruthenium CVD from RuO4
341
7.5.5
Ruthenium ALD
344
7.6
Concluding Remarks
344
References
345
xii
Contents
Chapter
8
Chemical Vapour Deposition of Metal Oxides for Microelectronics
Applications
Anthony C. Jones, Helen C. Aspinall and Paul R. Chalker
8.1
Introduction
357
8.2
Precursor Chemistry
358
8.2.1 ß-Diketonates
and Related Ligands
360
8.2.2 ß-Ketoiminates 363
8.2.3 Alkoxides 364
8.2.4
Alkylamides
369
8.2.5
Amidinates
369
8.2.6
Organometallic Precursors
370
8.3
CVD of Dielectric Oxides
372
8.3.1
CVD of ZrO2 and HfO2
372
8.3.2
CVD of Zr-and Hf-silicate
378
8.3.3
CVD of Hf-aluminate
379
8.3.4
CVD of Lanthanide Oxides
380
8.3.5
CVD of Multi-component Lanthanide Oxides
382
8.3.6
CVDofTiO2
384
8.3.7
CVDofAl2O3
386
8.3.8
CVDofTa2O5
386
8.4
CVD of Ferroelectric Metal Oxides
387
8.4.1
CVD of Pb(Zr,Ti)O3
388
8.4.2
CVD of Pb(Sc0 5Ta0 5)O3
389
8.4.3
CVDofPb(Mg0.33Nbo.66)03
391
8.4.4
CVDofSrBijíTa.vNb^.^Og
392
8.4.5
CVD of Bismuth Titanate (Bi4Ti3O12)
394
8.4.6
CVD of SrTiO3 and (Ba,Sr)TiO3
395
8.5
CVD of Conducting, Semiconducting and Magnetic Oxides
396
8.5.1
MOCVD of RuO2, LaNiO3 and LaSrCoO3
396
8.5.2
CVDofZnO
397
8.5.3
CVD of Magnetic and Magnetoelectric Oxides
397
8.6
CVD of High-Tc Superconducting Oxides
397
8.7
Conclusions
400
Acknowledgement
400
References
400
Chapter
9
Metal-organic Chemical Vapour Deposition of Refractory Transition
Metal Nitrides
Roland A. Fischer and
Har
is
h
Parala
9.1
Introduction and Overview
413
9.2
Applications of Transition Metal Nitrides
414
9.2.1
Diffusion Barrier Layers
414
9.2.2
Gate Electrode Applications
415
9.3
Crystal Chemistry and Materials Properties
416
9.3.1
Titanium Nitride, Zirconium Nitride and Hafnium Nitride
416
9.3.2
Niobium Nitride and Tantalum Nitride
417
9.3.3
Molybdenum Nitride and Tungsten Nitride
418
9.4
Thin Film Deposition of Transition Metal Nitrides
420
Contents xjjj
9.4.1
Precursor
Chemistry for MOCVD and ALD of Nitrides
420
9.4.2
Titanium Nitride Deposition
422
9.4.3
Zirconium and Hafnium Nitride Deposition
427
9.4.4
Niobium and Tantalum Nitride Deposition
427
9.4.5
Molybdenum and Tungsten Nitride Deposition
433
9.5
Conclusions and Prospects
437
Acknowledgements
437
References
438
Chapter
10
CVD of Functional Coatings on Glass
Ivan P. Parkin and Robert G. Palgrave
10.1
Introduction
451
10.1.1
Architectural Glazing
452
10.1.2
Automotive/Aerospace Glazing
452
10.1.3
Container Coating
452
10.1.4
Industrial Glass Manufacture and Coating
453
10.1.5
On-line Coating Using the Float Glass Process
453
10.1.6
On-line Coating of Glass Containers
454
10.1.7
Glass as a Substrate
455
10.1.8
Influence of Precursor Chemistry on Glass
455
10.1.9
Overview of Functional Coatings Applied
to Glass
456
10.2
CVD of Transparent Conducting Coatings on Glass
456
10.2.1
Indium Tin Oxide
456
10.2.2
F, Cl, Sb
Doped Tin Oxide
458
10.3
CVD of Reflective Coatings on Glass
459
10.3.1
Titanium Nitride Thin Films
459
10.4
CVD of Electrochromic and Photochromic Coatings
460
10.4.1
Introduction to Metal Oxide Based Electrochromic
and Photochromic Devices
460
10.4.2
Mechanism of Electrochromism
462
10.4.3
CVD of Electrochromic and Photochromic Tungsten
Oxide Coatings
464
10.4.4
Atmospheric Pressure CVD of WO3
464
10.4.5
Aerosol-assisted CVD of WO3
466
10.5
Vanadium Dioxide Thermochromic Coatings
467
10.5.1
Introduction to Thermochromic VO2
467
10.5.2
Atmospheric Pressure CVD of VO2
468
10.5.3
Low Pressure CVD of VO2
471
10.6
Self-cleaning Coatings on Glass
472
References
473
Chapter
11
Photo-assisted CVD
Stuart J. C. Irvine and Dan Lamb
11.1
Introduction
477
11.2
Principles of Photo-assisted CVD
477
11.2.1
Photothermal
Processes
478
11.2.2
Photolysis
479
xiv
Contents
11.2.3
Photocatalysis
482
11.2.4
Photosensitization
486
11.3
Lamps and Lasers for Photolysis
487
11.4
Further Examples of Photolysis in Photo-assisted CVD
489
11.5
Conclusions
492
References
492
Chapter
12
Plasma Enhanced Chemical Vapour Deposition Processes
Sergei E. Ale.xandror and Michael L. Hitclmum
12.1
Introduction
494
12.2
Remote Plasma Enhanced CVD (RPECVD) Processes
495
12.2.1
Introduction
495
12.2.2
Advantages and Disadvantages of RPECVD
496
12.2.3
RPECVD of Silicon Nitride Films
500
12.3
Atmospheric Pressure PECVD (AP-PECVD) using
Non-thermal Plasmas
510
12.3.1
Introduction
510
12.3.2
Sources of Atmospheric Pressure, Non-thermal Plasmas
510
12.3.3
Applications of Electrical Discharges for AP-PECVD
511
12.4
Conclusions
530
References
530
Chapter
13
Commercial Aspects of CVD
Albert Barry Lee
se
and Alan
Rodne v
Mills
13.1
CVD Industries Introduction
535
13.1.1
Glass Coatings
536
13.1.2
Silicon Devices
537
13.1.3
Compound Semiconductors
538
13.2
Industry Structure
541
13.2.1
The Sheet Glass Industry
541
13.2.2
The Silicon Industry
541
13.2.3
The
ПІ
-V
LED Industry
542
13.2.4
III-V Semiconductor Lasers
543
13.3
Precursor Selection
544
13.4
Commercial Considerations
544
13.4.1
Silicon
544
13.4.2
Compound Semiconductors
545
13.4.3
Architectural Glass Coating
546
13.4.4
Thin Film Transistor (TFT) and Solar Applications
546
13.5
Health, Safety and Analytical
546
13.5.1
Health and Safety
546
13.5.2
Analytical Requirements
547
13.6
Typical Precursors for the Silicon Semiconductor Industry
548
13.7
III-V CVD HB Light Emitting Diode Applications
548
13.7.1
Historical LED Production
548
13.7.2
Overview of CVD Processes
550
13.7.3
Hand Held Devices and Display Backlighting
552
Contents xv
13.7.4
Large
Display
Backlighting
552
13.7.5
Portable Lighting
553
13.7.6
Automotive and Vehicle Uses
555
13.7.7
Signage and Channel Letters
557
13.7.8
Signals
-
Traffic
559
13.7.9
Aviation Lighting
559
13.7.10
Marine Lighting
560
13.7.11
General Lighting and Illumination
561
13.7.12
Group III-V High Frequency Devices
564
13.7.13
Group III-V Semiconductor Diode Lasers
566
13.7.14
Solar Cells
567
13.7.15
Silicon Carbide Applications
569
Subject Index
571
|
| adam_txt |
Contents
Chapter
1
Overview of Chemical Vapour Deposition
Anthony C. Jones and Michael L. Hitchman
1.1
Basic Definitions
1
1.2
Historical Perspective
2
1.3
Chemical Vapour Deposition Processes
4
1.3.1
Conventional CVD Processes
4
1.3.2
Variants of CVD
7
1.4
CVD Precursors
1
1
1.4.1
Precursor Requirements
1
1
1.4.2
Precursor Volatility
Π
1.4.3
Precursor Thermal Stability
14
1.4.4
Precursor Purity and Precursor Analysis
15
1.4.5
Precursor Purification Techniques
17
1.5
CVD Reactors
18
1.6
Materials Deposited by CVD and Applications
22
1.7
Materials Properties
22
1.7.1
Layer Morphology
22
1.7.2
Layer Properties
27
1.8
Postscript
33
References
33
Chapter
2
CVD Reactors and Delivery System Technology
Susan P. Krumdieck
2.1
CVD System Overview
37
2.1.1
CVD System Performance
38
2.1.2
Historical Perspective on Reactor Diversity
40
2.2
CVD Process Fundamentals
40
2.2.1
Research and Development of CVD Technology
42
2.2.2
Gas Dynamics and Flow Basics
42
2.2.3
Molecular and Transition Flow Regimes
44
2.2.4
High Vacuum CVD Reactor Deposition Model
47
Chemical Vapour Deposition: Precursors, Processes and Applications
Edited by Anthony
С
Jones and Michael L. Hitchman
£
Royal Society of Chemistry
2009
Published by the Royal Society of Chemistry, www.rsc.org
Contents
2.2.5
Viscous Flow Regime Convection Mass Transport
49
2.2.6
LPCVD Reactor Deposition Model
50
2.3
System Platform and Equipment Considerations
53
2.3.1
Contamination: Material Selection and Design
Considerations
54
2.3.2
Establishing the Vacuum: Pumps and Components
58
2.3.3
Pressure Measurement
65
2.3.4
Flow Control
67
2.3.5
Temperature Measurement
71
2.3.6
Heating Strategies
73
2.4
Conventional CVD Reactors
75
2.4.1
Research-scale Reactors
77
2.4.2
Tube Reactor
77
2.4.3
Showerhead and Planetary Reactors
80
2.5
Liquid Precursor Delivery and Process Control
83
2.5.1
Liquid Injection Delivery Systems
83
2.5.2
Aerosol and Spray Reactors
86
2.6
Deposition Control by Surface Processes
88
2.6.1
ALD Reactors
88
2.6.2
CBE Reactors
89
References
91
Chapter
3
Modeling CVD Processes
Mark D.
Aliendorf,
Theodore. M. Besmann, Robert J. Kee
and Mark T. Swihart
3.1
Introduction
93
3.2
Thermodynamic Modeling of CVD
95
3.2.1
Application of Thermochemical Modeling to Chemical
Vapor Deposition
95
3.2.2
Thermochemistry of CVD
95
3.2.3
Consideration of Non-stoichiometric/Solution Phases
97
3.2.4
Thermochemical Equilibrium Software Packages
101
3.2.5
Thermochemical Data and Databases
102
3.3
Reactor Modeling
103
3.3.1
Chemically Reacting Fluid Flow
103
3.3.2
Rate Controlling Processes
104
3.3.3
General Conservation Equations
104
3.3.4
Boundary and Initial Conditions
106
3.3.5
Computational Solution
108
3.3.6
Uniform Deposits in Complex Reactors
108
3.3.7
Reactor Design
108
3.4
Gas-phase Thermochemistry and Kinetics
112
3.4.1 Ab Initio
Methods for Predicting Gas-phase
Thermochemistry
113
3.4.2
Sources of Gas-phase Thermodynamic Data
119
3.4.3
Modeling Precursor Pyrolysis
119
3.5
Mechanism Development
125
3.5.1
Kinetic Regimes
125
Contents
3.5.2 Global versus
Elementary Mechanisms
126
3.5.3
Gas-phase Chemistry
127
3.5.4
Sources of Gas-phase Kinetics Information
129
3.5.5
Surface Chemistry
129
3.6
Particle Formation and Growth
141
3.6.1
Introduction
141
3.6.2
Modeling Approaches
141
3.6.3
Mechanisms of Particle Formation, Growth
and Transport
146
3.6.4
Particle Formation: Modeling Examples
149
3.6.5
Summary
150
References
15
1
Chapter
4
Atomic Layer Deposition
Mikko
Ritala
and
Jaakko Niinistö
158
158
159
161
167
167
167
170
175
181
182
182
185
187
188
188
190
191
191
192
192
192
197
197
197
197
198
198
199
199
199
200
200
4.1
Introduction
4.2
Basic Features of ALD
4.2.1
Principle and Characteristic Features of ALD
4.2.2
Limitations of ALD
4.2.3
Comparison of ALD and CVD
4.3
Precursor Chemistry
4.3.1
ALD Precursor Requirements
4.3.2
Precursor Types
4.3.3
Characterization of ALD Chemistry
4.4
ALD Reactors
4.4.1
Operation Pressure
4.4.2
Precursor Sources with Valving System
4.4.3
Reaction Chamber
4.4.4
Batch Reactors
4.4.5
Wall Temperature
4.4.6
Plasma Sources
4.4.7
Other Reactor Configurations
4.4.8
Process Control Devices
4.5
Applications of ALD
4.5.1
Thin Film Electroluminescent Displays (TFELs)
4.5.2
Magnetic Heads
4.5.3
Microelectronics
4.5.4
Protective Coatings
4.5.5
Solar Cells
4.5.6
Optical Applications
4.5.7
Heterogeneous Catalysts
4.5.8
Coatings on Powders
4.5.9
Photocatalysts
4.5.10
Coatings on Polymers
4.5.11
Micro-electro-mechanical Systems (MEMS)
4.5.12
Nanotechnology
4.6
Conclusions
References
Chapter
5
Basic Chemistry of CVD and ALD Precursors
Mohammad Azad Malik and Paul
O 'Brien
Contents
5.1
Introduction
5.2
Precursor Requirements for CVD
5.2.1
Precursor Purity
5.2.2
Precursor Reactivity
5.2.3
Volatility
5.2.4
Stability in Air
5.2.5
Toxicity
5.2.6
Synthesis
5.2.7
Environment and Cost
5.3
Metal Chalcogenides
5.3.1
Alternative Chalcogenide Precursors
5.3.2
Single-molecule Precursors
5.4
Metal Pnictides
5.4.1
III-V Materials
5.5
Metals
5.5.1
Precursor for Metals
5.5.2
CVD of Metals
5.6
Metal Oxides
5.6.1
Precursors
5.6.2
CVD of Metal Oxides
5.7
Chemistry of ALD Precursors
5.7.1
ALD Precursors
ALD Precursors for Oxides
ALD of Metals
Organometallic Precursors
Non-metal Precursors
Metal Nitrides
Metal Films and Plasma-ALD
5.7.2
5.7.3
5.7.4
5.7.5
5.7.6
5.7.7
References
207
207
207
208
208
208
208
208
208
209
209
211
230
230
234
234
235
237
237
240
245
245
247
249
250
252
253
253
254
Chapter
6
CVD of III-V Compound Semiconductors
Jae-Hyun Ryou, Ravi Kanjolia and Russell D. Dupuis
6.1
Fundamentals of III-V Compound Semiconductors
6.1.1
Characteristics of III-V Compound Semiconductors
6.1.2
Material Properties of III-V Compound
Semiconductors
6.2
Applications of III-V Compound Semiconductors
6.2.1
Photonic Device Applications
6.2.2
Electronic Device Applications
6.3
Fundamentals of CVD Processes for III-V Compound
Semiconductors
6.3.1
Historical Overview of MOCVD Technology
6.3.2
Chemical Reactions in MOCVD Growth
6.3.3
Thermodynamics, Kinetics and Hydrodynamics
of the MOCVD Process
272
273
279
279
280
285
286
286
287
290
Contents
6.3.4
Growth Mechanisms of the MOCVD Process
in a Reactor Chamber
292
6.4
MOCVD Reactor Systems
293
6.4.1
Safety Apparatus and System
294
6.4.2
Gas Delivery System
296
6.4.3
Growth Chamber
299
6.4.4
Exhaust System
301
6.5
Precursors Synthesis, Purification, Analysis and Delivery
302
6.5.1
Synthesis and Purification
302
6.5.2
Analysis
305
6.5.3
Vapor Phase Transport and Measurements
305
6.5.4
Condensed Phase Group V Precursors
307
6.6
MOCVD of Specific III-V Materials
309
6.6.1
GaAs-based Materials
309
6.6.2
InP-based Materials
310
6.6.3
GaSb-based Materials
311
6.6.4
GaN-based Materials
312
6.7
MOCVD in the Future
315
6.8
Summary and Conclusions
315
References
315
Chapter
7
Chemical Vapor Deposition of Metals: W,
Al, Cu
and
Ru
Bing
Luo and Wayne
L.
Glad/eller
7.1
Introduction
320
7.1.1
Deposition Chemistry
-
General Comments
320
7.1.2
Induction Periods, Selectivity,
Microstructure
and the
Critical Role of Nucleation
322
7.2
CVD of Tungsten
322
7.2.1
Deposition on Si and SiO2 from
WFń
323
7.2.2
WF6-H2 System
323
7.2.3
WFŔ-SiH4
System
324
7.2.4
Tungsten ALD
326
7.3
CVD of Aluminium
326
7.3.1
Precursors
327
7.4
CVD of Copper
331
7.4.1
Deposition from
Copper(ii)
Precursors
331
7.4.2
Deposition from
Copper(i)
Precursors
334
7.4.3
Copper ALD
336
7.5
Ruthenium CVD
337
7.5.1
Ruthenium CVD from Ru
ß-Diketonates 337
7.5.2
Ru(CO)5, Ru3(CO)i2 and other Precursors Containing
the CO Ligand
338
7.5.3
Ruthenium CVD from Sandwich or Half-sandwich
Precursors
340
7.5.4
Ruthenium CVD from RuO4
341
7.5.5
Ruthenium ALD
344
7.6
Concluding Remarks
344
References
345
xii
Contents
Chapter
8
Chemical Vapour Deposition of Metal Oxides for Microelectronics
Applications
Anthony C. Jones, Helen C. Aspinall and Paul R. Chalker
8.1
Introduction
357
8.2
Precursor Chemistry
358
8.2.1 ß-Diketonates
and Related Ligands
360
8.2.2 ß-Ketoiminates 363
8.2.3 Alkoxides 364
8.2.4
Alkylamides
369
8.2.5
Amidinates
369
8.2.6
Organometallic Precursors
370
8.3
CVD of Dielectric Oxides
372
8.3.1
CVD of ZrO2 and HfO2
372
8.3.2
CVD of Zr-and Hf-silicate
378
8.3.3
CVD of Hf-aluminate
379
8.3.4
CVD of Lanthanide Oxides
380
8.3.5
CVD of Multi-component Lanthanide Oxides
382
8.3.6
CVDofTiO2
384
8.3.7
CVDofAl2O3
386
8.3.8
CVDofTa2O5
386
8.4
CVD of Ferroelectric Metal Oxides
387
8.4.1
CVD of Pb(Zr,Ti)O3
388
8.4.2
CVD of Pb(Sc0 5Ta0 5)O3
389
8.4.3
CVDofPb(Mg0.33Nbo.66)03
391
8.4.4
CVDofSrBijíTa.vNb^.^Og
392
8.4.5
CVD of Bismuth Titanate (Bi4Ti3O12)
394
8.4.6
CVD of SrTiO3 and (Ba,Sr)TiO3
395
8.5
CVD of Conducting, Semiconducting and Magnetic Oxides
396
8.5.1
MOCVD of RuO2, LaNiO3 and LaSrCoO3
396
8.5.2
CVDofZnO
397
8.5.3
CVD of Magnetic and Magnetoelectric Oxides
397
8.6
CVD of High-Tc Superconducting Oxides
397
8.7
Conclusions
400
Acknowledgement
400
References
400
Chapter
9
Metal-organic Chemical Vapour Deposition of Refractory Transition
Metal Nitrides
Roland A. Fischer and
Har
is
h
Parala
9.1
Introduction and Overview
413
9.2
Applications of Transition Metal Nitrides
414
9.2.1
Diffusion Barrier Layers
414
9.2.2
Gate Electrode Applications
415
9.3
Crystal Chemistry and Materials Properties
416
9.3.1
Titanium Nitride, Zirconium Nitride and Hafnium Nitride
416
9.3.2
Niobium Nitride and Tantalum Nitride
417
9.3.3
Molybdenum Nitride and Tungsten Nitride
418
9.4
Thin Film Deposition of Transition Metal Nitrides
420
Contents xjjj
9.4.1
Precursor
Chemistry for MOCVD and ALD of Nitrides
420
9.4.2
Titanium Nitride Deposition
422
9.4.3
Zirconium and Hafnium Nitride Deposition
427
9.4.4
Niobium and Tantalum Nitride Deposition
427
9.4.5
Molybdenum and Tungsten Nitride Deposition
433
9.5
Conclusions and Prospects
437
Acknowledgements
437
References
438
Chapter
10
CVD of Functional Coatings on Glass
Ivan P. Parkin and Robert G. Palgrave
10.1
Introduction
451
10.1.1
Architectural Glazing
452
10.1.2
Automotive/Aerospace Glazing
452
10.1.3
Container Coating
452
10.1.4
Industrial Glass Manufacture and Coating
453
10.1.5
On-line Coating Using the Float Glass Process
453
10.1.6
On-line Coating of Glass Containers
454
10.1.7
Glass as a Substrate
455
10.1.8
Influence of Precursor Chemistry on Glass
455
10.1.9
Overview of Functional Coatings Applied
to Glass
456
10.2
CVD of Transparent Conducting Coatings on Glass
456
10.2.1
Indium Tin Oxide
456
10.2.2
F, Cl, Sb
Doped Tin Oxide
458
10.3
CVD of Reflective Coatings on Glass
459
10.3.1
Titanium Nitride Thin Films
459
10.4
CVD of Electrochromic and Photochromic Coatings
460
10.4.1
Introduction to Metal Oxide Based Electrochromic
and Photochromic Devices
460
10.4.2
Mechanism of Electrochromism
462
10.4.3
CVD of Electrochromic and Photochromic Tungsten
Oxide Coatings
464
10.4.4
Atmospheric Pressure CVD of WO3
464
10.4.5
Aerosol-assisted CVD of WO3
466
10.5
Vanadium Dioxide Thermochromic Coatings
467
10.5.1
Introduction to Thermochromic VO2
467
10.5.2
Atmospheric Pressure CVD of VO2
468
10.5.3
Low Pressure CVD of VO2
471
10.6
Self-cleaning Coatings on Glass
472
References
473
Chapter
11
Photo-assisted CVD
Stuart J. C. Irvine and Dan Lamb
11.1
Introduction
477
11.2
Principles of Photo-assisted CVD
477
11.2.1
Photothermal
Processes
478
11.2.2
Photolysis
479
xiv
Contents
11.2.3
Photocatalysis
482
11.2.4
Photosensitization
486
11.3
Lamps and Lasers for Photolysis
487
11.4
Further Examples of Photolysis in Photo-assisted CVD
489
11.5
Conclusions
492
References
492
Chapter
12
Plasma Enhanced Chemical Vapour Deposition Processes
Sergei E. Ale.xandror and Michael L. Hitclmum
12.1
Introduction
494
12.2
Remote Plasma Enhanced CVD (RPECVD) Processes
495
12.2.1
Introduction
495
12.2.2
Advantages and Disadvantages of RPECVD
496
12.2.3
RPECVD of Silicon Nitride Films
500
12.3
Atmospheric Pressure PECVD (AP-PECVD) using
Non-thermal Plasmas
510
12.3.1
Introduction
510
12.3.2
Sources of Atmospheric Pressure, Non-thermal Plasmas
510
12.3.3
Applications of Electrical Discharges for AP-PECVD
511
12.4
Conclusions
530
References
530
Chapter
13
Commercial Aspects of CVD
Albert Barry Lee
se
and Alan
Rodne v
Mills
13.1
CVD Industries Introduction
535
13.1.1
Glass Coatings
536
13.1.2
Silicon Devices
537
13.1.3
Compound Semiconductors
538
13.2
Industry Structure
541
13.2.1
The Sheet Glass Industry
541
13.2.2
The Silicon Industry
541
13.2.3
The
ПІ
-V
LED Industry
542
13.2.4
III-V Semiconductor Lasers
543
13.3
Precursor Selection
544
13.4
Commercial Considerations
544
13.4.1
Silicon
544
13.4.2
Compound Semiconductors
545
13.4.3
Architectural Glass Coating
546
13.4.4
Thin Film Transistor (TFT) and Solar Applications
546
13.5
Health, Safety and Analytical
546
13.5.1
Health and Safety
546
13.5.2
Analytical Requirements
547
13.6
Typical Precursors for the Silicon Semiconductor Industry
548
13.7
III-V CVD HB Light Emitting Diode Applications
548
13.7.1
Historical LED Production
548
13.7.2
Overview of CVD Processes
550
13.7.3
Hand Held Devices and Display Backlighting
552
Contents xv
13.7.4
Large
Display
Backlighting
552
13.7.5
Portable Lighting
553
13.7.6
Automotive and Vehicle Uses
555
13.7.7
Signage and Channel Letters
557
13.7.8
Signals
-
Traffic
559
13.7.9
Aviation Lighting
559
13.7.10
Marine Lighting
560
13.7.11
General Lighting and Illumination
561
13.7.12
Group III-V High Frequency Devices
564
13.7.13
Group III-V Semiconductor Diode Lasers
566
13.7.14
Solar Cells
567
13.7.15
Silicon Carbide Applications
569
Subject Index
571 |
| any_adam_object | 1 |
| any_adam_object_boolean | 1 |
| building | Verbundindex |
| bvnumber | BV035140470 |
| classification_rvk | UP 7550 |
| classification_tum | FER 882f ELT 279f |
| ctrlnum | (OCoLC)315856255 (DE-599)BSZ283432527 |
| discipline | Physik Elektrotechnik Fertigungstechnik |
| discipline_str_mv | Physik Elektrotechnik Fertigungstechnik |
| format | Book |
| fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01490nam a22003732c 4500</leader><controlfield tag="001">BV035140470</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">20130620 </controlfield><controlfield tag="007">t</controlfield><controlfield tag="008">081104s2009 ad|| |||| 00||| eng d</controlfield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9780854044658</subfield><subfield code="c">Gb. : GBP 199.95</subfield><subfield code="9">978-0-85404-465-8</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)315856255</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BSZ283432527</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-703</subfield><subfield code="a">DE-91G</subfield><subfield code="a">DE-634</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">UP 7550</subfield><subfield code="0">(DE-625)146434:</subfield><subfield code="2">rvk</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">FER 882f</subfield><subfield code="2">stub</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">ELT 279f</subfield><subfield code="2">stub</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Chemical vapour deposition</subfield><subfield code="b">precursors, processes and applications</subfield><subfield code="c">ed. by Anthony C. Jones ; Michael L. Hitchman</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">Cambrigde</subfield><subfield code="b">RSC Publ.</subfield><subfield code="c">2009</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">XV, 582 S.</subfield><subfield code="b">Ill., graph. Darst.</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">CVD-Verfahren</subfield><subfield code="0">(DE-588)4009846-1</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="655" ind1=" " ind2="7"><subfield code="0">(DE-588)4143413-4</subfield><subfield code="a">Aufsatzsammlung</subfield><subfield code="2">gnd-content</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">CVD-Verfahren</subfield><subfield code="0">(DE-588)4009846-1</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Jones, Anthony C.</subfield><subfield code="e">Sonstige</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Hitchman, Michael L.</subfield><subfield code="e">Sonstige</subfield><subfield code="4">oth</subfield></datafield><datafield tag="776" ind1="0" ind2="8"><subfield code="i">Erscheint auch als</subfield><subfield code="n">Online-Ausgabe</subfield><subfield code="z">978-1-62198-703-1</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="m">Digitalisierung UB Bayreuth</subfield><subfield code="q">application/pdf</subfield><subfield code="u">http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=016807859&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA</subfield><subfield code="3">Inhaltsverzeichnis</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-016807859</subfield></datafield></record></collection> |
| genre | (DE-588)4143413-4 Aufsatzsammlung gnd-content |
| genre_facet | Aufsatzsammlung |
| id | DE-604.BV035140470 |
| illustrated | Illustrated |
| index_date | 2024-07-02T22:26:59Z |
| indexdate | 2024-07-09T21:23:12Z |
| institution | BVB |
| isbn | 9780854044658 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-016807859 |
| oclc_num | 315856255 |
| open_access_boolean | |
| owner | DE-703 DE-91G DE-BY-TUM DE-634 |
| owner_facet | DE-703 DE-91G DE-BY-TUM DE-634 |
| physical | XV, 582 S. Ill., graph. Darst. |
| publishDate | 2009 |
| publishDateSearch | 2009 |
| publishDateSort | 2009 |
| publisher | RSC Publ. |
| record_format | marc |
| spelling | Chemical vapour deposition precursors, processes and applications ed. by Anthony C. Jones ; Michael L. Hitchman Cambrigde RSC Publ. 2009 XV, 582 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier CVD-Verfahren (DE-588)4009846-1 gnd rswk-swf (DE-588)4143413-4 Aufsatzsammlung gnd-content CVD-Verfahren (DE-588)4009846-1 s DE-604 Jones, Anthony C. Sonstige oth Hitchman, Michael L. Sonstige oth Erscheint auch als Online-Ausgabe 978-1-62198-703-1 Digitalisierung UB Bayreuth application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=016807859&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Chemical vapour deposition precursors, processes and applications CVD-Verfahren (DE-588)4009846-1 gnd |
| subject_GND | (DE-588)4009846-1 (DE-588)4143413-4 |
| title | Chemical vapour deposition precursors, processes and applications |
| title_auth | Chemical vapour deposition precursors, processes and applications |
| title_exact_search | Chemical vapour deposition precursors, processes and applications |
| title_exact_search_txtP | Chemical vapour deposition precursors, processes and applications |
| title_full | Chemical vapour deposition precursors, processes and applications ed. by Anthony C. Jones ; Michael L. Hitchman |
| title_fullStr | Chemical vapour deposition precursors, processes and applications ed. by Anthony C. Jones ; Michael L. Hitchman |
| title_full_unstemmed | Chemical vapour deposition precursors, processes and applications ed. by Anthony C. Jones ; Michael L. Hitchman |
| title_short | Chemical vapour deposition |
| title_sort | chemical vapour deposition precursors processes and applications |
| title_sub | precursors, processes and applications |
| topic | CVD-Verfahren (DE-588)4009846-1 gnd |
| topic_facet | CVD-Verfahren Aufsatzsammlung |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=016807859&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| work_keys_str_mv | AT jonesanthonyc chemicalvapourdepositionprecursorsprocessesandapplications AT hitchmanmichaell chemicalvapourdepositionprecursorsprocessesandapplications |