The physics and modeling of MOSFETS: surface-potential model HiSIM
Gespeichert in:
| Hauptverfasser: | , |
|---|---|
| Format: | Buch |
| Sprache: | English |
| Veröffentlicht: |
New Jersey [u.a.]
World Scientific
2008
|
| Schriftenreihe: | International Series on Advances in solid State Electronics and Technology
|
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | XXII, 352 S. graph. Darst. |
| ISBN: | 9812568646 9789812568649 |
Internformat
MARC
| LEADER | 00000nam a2200000 c 4500 | ||
|---|---|---|---|
| 001 | BV035126079 | ||
| 003 | DE-604 | ||
| 005 | 20081208 | ||
| 007 | t | ||
| 008 | 081029s2008 d||| |||| 00||| eng d | ||
| 020 | |a 9812568646 |9 981-256-864-6 | ||
| 020 | |a 9789812568649 |9 978-981-256-864-9 | ||
| 024 | 3 | |a 9789812568649 | |
| 035 | |a (OCoLC)633410638 | ||
| 035 | |a (DE-599)BSZ263275787 | ||
| 040 | |a DE-604 |b ger | ||
| 041 | 0 | |a eng | |
| 049 | |a DE-706 |a DE-83 | ||
| 084 | |a ZN 4870 |0 (DE-625)157415: |2 rvk | ||
| 100 | 1 | |a Mattausch, Hans Jürgen |e Verfasser |4 aut | |
| 245 | 1 | 0 | |a The physics and modeling of MOSFETS |b surface-potential model HiSIM |c Mitiko Miura-Mattausch ; Hans Jürgen Mattausch ; Tatsuya Ezaki |
| 264 | 1 | |a New Jersey [u.a.] |b World Scientific |c 2008 | |
| 300 | |a XXII, 352 S. |b graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 490 | 0 | |a International Series on Advances in solid State Electronics and Technology | |
| 650 | 0 | 7 | |a Simulation |0 (DE-588)4055072-2 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a MOS-FET |0 (DE-588)4207266-9 |2 gnd |9 rswk-swf |
| 689 | 0 | 0 | |a MOS-FET |0 (DE-588)4207266-9 |D s |
| 689 | 0 | 1 | |a Simulation |0 (DE-588)4055072-2 |D s |
| 689 | 0 | |5 DE-604 | |
| 700 | 1 | |a Miura-Mattausch, Mitiko |d 1949- |e Verfasser |0 (DE-588)136793428 |4 aut | |
| 856 | 4 | 2 | |m HBZ Datenaustausch |q application/pdf |u http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=016793664&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |3 Inhaltsverzeichnis |
| 999 | |a oai:aleph.bib-bvb.de:BVB01-016793664 | ||
Datensatz im Suchindex
| _version_ | 1804138106257932288 |
|---|---|
| adam_text | Contents
Foreword v
Preface vii
Definition of Symbols Used for Variables and Constants xvii
1. Semiconductor Device Physics 1
1.1 Band Structure Concept 1
1.1.1 Energy Bands and Quasi Particles 1
1.1.2 Effective Mass Approximation 9
1.2 Carrier Density and Fermi Level in Semiconductors .... 12
1.2.1 Impurities in Semiconductors 12
1.2.2 Impurity Levels 14
1.2.3 Number of Carriers under Thermal Equilibrium . . 17
1.2.3.1 Carrier Density in Pure Semiconductors . 23
1.2.3.2 Carrier Density in Impure or Doped Semi¬
conductors 24
1.2.4 Fermi Level 27
1.3 P-N Junction 31
1.3.1 P-N Junction in Thermal Equilibrium 33
1.3.2 P-N Junction with External Voltages 40
1.4 Device Simulation 45
1.4.1 Basic Equations 45
1.4.2 Linearization and Discretization of Poisson Equation 51
1.4.3 Device Simulation of MOSFETs 55
xi
xii The Physics and Modeling of MOSFETs
1.5 Summary of Equations and Symbols Presented in Chap¬
ter 1 for Semiconductor Device Physics 60
Bibliography 75
2. Basic Compact Surface-Potential Model of the MOSFET 77
2.1 Compact Modeling Concept 77
2.2 Device Structure Parameters of the MOSFET 85
2.3 Surface Potentials 87
2.4 Charge Densities 96
2.5 Drain Current 104
2.6 Summary of Equations and Model Parameters Presented
in Chapter 2 for Basic Compact Surface-Potential Model
of the MOSFET 110
2.6.1 Section 2.2: Device Structure Parameters of the
MOSFET 110
2.6.2 Section 2.3: Surface Potentials 110
2.6.3 Section 2.4: Charge Densities Ill
2.6.4 Section 2.5: Drain Current Ill
Bibliography 112
3. Advanced MOSFET Phenomena Modeling 117
3.1 Threshold Voltage Shift 117
3.1.1 (I) Short-Channel Effects 119
3.1.2 (II) Reverse-Short-Channel Effects 125
3.2 Depletion Effect of the Poly-Si Gate 145
3.3 Quantum-Mechanical Effects 150
3.4 Mobility Model 158
3.4.1 Low Field Mobility 158
3.4.2 High Field Mobility 163
3.5 Channel-Length Modulation 164
3.6 Narrow-Channel Effects 176
3.6.1 Threshold Voltage Shift 177
3.6.2 Mobility Modification due to a Narrow Gate . . . 179
3.6.3 Leakage Current due to STI Technology 181
3.6.4 Small-Geometry Effects 185
Contents xiii
3.7 Effects of the Length of the Diffused Source/Drain Con¬
tacts in Shallow-Trench Isolation (STI) Technologies ... 188
3.8 Temperature Dependences 190
3.9 Conservation of Symmetry at Vds = 0 195
3.10 Harmonic Distortions 198
3.11 Summary of Equations and Model Parameters Appearing
in Chapter 3 for Advanced MOSFET Phenomena Modeling 206
3.11.1 Section 3.1: Threshold Voltage Shift 206
3.11.2 Section 3.2: Depletion Effect of the Poly-Silicon
Gate 208
3.11.3 Section 3.3: Quatum-Mechanical Effects 208
3.11.4 Section 3.4: Mobility Model 209
3.11.5 Section 3.5: Channel-Length Modulation 210
3.11.6 Section 3.6: Narrow-Channel Effects 211
3.11.7 Section 3.7: Effect of the Source/Drain Diffusion
Length for Shallow-Trench Isolation (STI) Tech¬
nologies 213
3.11.8 Section 3.8: Temperature Dependences 214
Bibliography 215
4. Capacitances 223
4.1 Intrinsic Capacitances 223
4.2 Overlap Capacitances 228
4.3 Longitudinal (Lateral) -Field-Induced Capacitance .... 236
4.4 Fringing Capacitance 239
4.5 Summary of Equations and Model Parameters Appearing
in Chapter 4 for Capacitances 241
Bibliography 242
5. Leakage Currents and Junction Diode 245
5.1 Leakage Currents 245
5.1.1 Substrate Current 245
5.1.2 Gate Current 248
5.1.3 GIDL (Gate-Induced Drain Leakage) Current ... 251
5.2 Bulk/Source and Bulk/Drain Junction Models 254
5.2.1 Junction Current 254
xiv The Physics and Modeling of MOSFETs
5.2.2 Junction Capacitance 260
5.3 Summary of Equations and Model Parameters Appeared
in Chapter 5 for Leakage Currents and Junction Diode . . 264
5.3.1 Section 5.1: Leakage Currents 264
5.3.2 Section 5.2: Junction Diode 265
Bibliography 266
6. Modeling of Phenomena Important for RF Applications 269
6.1 Noise Models 269
6.1.1 1// Noise Model 270
6.1.2 Thermal Noise Model 277
6.1.3 Induced Gate and Cross-Correlation Noise Model . 281
6.2 Non-Quasi-Static (NQS) Model 290
6.2.1 Time-Domain Analysis 291
6.2.2 Frequency-Domain Analysis 301
6.3 External MOS Transistor Resistances 310
6.3.1 Source/Drain Resistances 310
6.3.2 Gate Resistance 311
6.4 Summary of Equations and Model Parameters Appeared in
Chapter 6 for Modeling of Phenomena Important for RF
Applications 312
6.4.1 Section 6.1: Noise Models 312
6.4.2 Section 6.2: Non-Quasi-Static (NQS) Model ... 313
6.4.3 Section 6.3: External MOS Transistor Resistances 313
Bibliography 314
7. Summary of HiSIM s Model Equations, Parameters, and
Parameter-Extraction Method 319
7.1 Model Equations of HiSIM 319
7.1.1 Physical Quantities 319
7.1.2 MOSFETSize 320
7.1.3 Temperature Dependence 321
7.1.4 Substrate Impurity Concentration JVaub 322
7.1.5 Threshold Voltage Shift AFth 322
7.1.6 Mobility Model 324
7.1.7 Drain Current Jds 325
Contents xv
7.1.8 Channel-Length Modulation 325
7.1.9 Shallow-Trench-Isolation (STI) Effect 326
7.1.10 Capacitances 327
7.1.11 Leakage Currents 328
7.1.12 Noise 328
7.1.13 Non-Quasi-Static (NQS) Effects 329
7.1.14 Parasitic Resistances 329
7.2 Model Flags and Exclusion of Modeled Effects 331
7.2.1 Parameter setting for Exclusion of Certain Model
Parts 331
7.2.2 Flags for Setting Model Options 331
7.3 Model Parameters and their Meaning 333
7.4 Default Values of the Model Parameter 338
7.5 Parameter Extraction Method 343
Bibliography 348
Index 349
|
| adam_txt |
Contents
Foreword v
Preface vii
Definition of Symbols Used for Variables and Constants xvii
1. Semiconductor Device Physics 1
1.1 Band Structure Concept 1
1.1.1 Energy Bands and Quasi Particles 1
1.1.2 Effective Mass Approximation 9
1.2 Carrier Density and Fermi Level in Semiconductors . 12
1.2.1 Impurities in Semiconductors 12
1.2.2 Impurity Levels 14
1.2.3 Number of Carriers under Thermal Equilibrium . . 17
1.2.3.1 Carrier Density in Pure Semiconductors . 23
1.2.3.2 Carrier Density in Impure or Doped Semi¬
conductors 24
1.2.4 Fermi Level 27
1.3 P-N Junction 31
1.3.1 P-N Junction in Thermal Equilibrium 33
1.3.2 P-N Junction with External Voltages 40
1.4 Device Simulation 45
1.4.1 Basic Equations 45
1.4.2 Linearization and Discretization of Poisson Equation 51
1.4.3 Device Simulation of MOSFETs 55
xi
xii The Physics and Modeling of MOSFETs
1.5 Summary of Equations and Symbols Presented in Chap¬
ter 1 for Semiconductor Device Physics 60
Bibliography 75
2. Basic Compact Surface-Potential Model of the MOSFET 77
2.1 Compact Modeling Concept 77
2.2 Device Structure Parameters of the MOSFET 85
2.3 Surface Potentials 87
2.4 Charge Densities 96
2.5 Drain Current 104
2.6 Summary of Equations and Model Parameters Presented
in Chapter 2 for Basic Compact Surface-Potential Model
of the MOSFET 110
2.6.1 Section 2.2: Device Structure Parameters of the
MOSFET 110
2.6.2 Section 2.3: Surface Potentials 110
2.6.3 Section 2.4: Charge Densities Ill
2.6.4 Section 2.5: Drain Current Ill
Bibliography 112
3. Advanced MOSFET Phenomena Modeling 117
3.1 Threshold Voltage Shift 117
3.1.1 (I) Short-Channel Effects 119
3.1.2 (II) Reverse-Short-Channel Effects 125
3.2 Depletion Effect of the Poly-Si Gate 145
3.3 Quantum-Mechanical Effects 150
3.4 Mobility Model 158
3.4.1 Low Field Mobility 158
3.4.2 High Field Mobility 163
3.5 Channel-Length Modulation 164
3.6 Narrow-Channel Effects 176
3.6.1 Threshold Voltage Shift 177
3.6.2 Mobility Modification due to a Narrow Gate . . . 179
3.6.3 Leakage Current due to STI Technology 181
3.6.4 Small-Geometry Effects 185
Contents xiii
3.7 Effects of the Length of the Diffused Source/Drain Con¬
tacts in Shallow-Trench Isolation (STI) Technologies . 188
3.8 Temperature Dependences 190
3.9 Conservation of Symmetry at Vds = 0 195
3.10 Harmonic Distortions 198
3.11 Summary of Equations and Model Parameters Appearing
in Chapter 3 for Advanced MOSFET Phenomena Modeling 206
3.11.1 Section 3.1: Threshold Voltage Shift 206
3.11.2 Section 3.2: Depletion Effect of the Poly-Silicon
Gate 208
3.11.3 Section 3.3: Quatum-Mechanical Effects 208
3.11.4 Section 3.4: Mobility Model 209
3.11.5 Section 3.5: Channel-Length Modulation 210
3.11.6 Section 3.6: Narrow-Channel Effects 211
3.11.7 Section 3.7: Effect of the Source/Drain Diffusion
Length for Shallow-Trench Isolation (STI) Tech¬
nologies 213
3.11.8 Section 3.8: Temperature Dependences 214
Bibliography 215
4. Capacitances 223
4.1 Intrinsic Capacitances 223
4.2 Overlap Capacitances 228
4.3 Longitudinal (Lateral) -Field-Induced Capacitance . 236
4.4 Fringing Capacitance 239
4.5 Summary of Equations and Model Parameters Appearing
in Chapter 4 for Capacitances 241
Bibliography 242
5. Leakage Currents and Junction Diode 245
5.1 Leakage Currents 245
5.1.1 Substrate Current 245
5.1.2 Gate Current 248
5.1.3 GIDL (Gate-Induced Drain Leakage) Current . 251
5.2 Bulk/Source and Bulk/Drain Junction Models 254
5.2.1 Junction Current 254
xiv The Physics and Modeling of MOSFETs
5.2.2 Junction Capacitance 260
5.3 Summary of Equations and Model Parameters Appeared
in Chapter 5 for Leakage Currents and Junction Diode . . 264
5.3.1 Section 5.1: Leakage Currents 264
5.3.2 Section 5.2: Junction Diode 265
Bibliography 266
6. Modeling of Phenomena Important for RF Applications 269
6.1 Noise Models 269
6.1.1 1// Noise Model 270
6.1.2 Thermal Noise Model 277
6.1.3 Induced Gate and Cross-Correlation Noise Model . 281
6.2 Non-Quasi-Static (NQS) Model 290
6.2.1 Time-Domain Analysis 291
6.2.2 Frequency-Domain Analysis 301
6.3 External MOS Transistor Resistances 310
6.3.1 Source/Drain Resistances 310
6.3.2 Gate Resistance 311
6.4 Summary of Equations and Model Parameters Appeared in
Chapter 6 for Modeling of Phenomena Important for RF
Applications 312
6.4.1 Section 6.1: Noise Models 312
6.4.2 Section 6.2: Non-Quasi-Static (NQS) Model . 313
6.4.3 Section 6.3: External MOS Transistor Resistances 313
Bibliography 314
7. Summary of HiSIM's Model Equations, Parameters, and
Parameter-Extraction Method 319
7.1 Model Equations of HiSIM 319
7.1.1 Physical Quantities 319
7.1.2 MOSFETSize 320
7.1.3 Temperature Dependence 321
7.1.4 Substrate Impurity Concentration JVaub 322
7.1.5 Threshold Voltage Shift AFth 322
7.1.6 Mobility Model 324
7.1.7 Drain Current Jds 325
Contents xv
7.1.8 Channel-Length Modulation 325
7.1.9 Shallow-Trench-Isolation (STI) Effect 326
7.1.10 Capacitances 327
7.1.11 Leakage Currents 328
7.1.12 Noise 328
7.1.13 Non-Quasi-Static (NQS) Effects 329
7.1.14 Parasitic Resistances 329
7.2 Model Flags and Exclusion of Modeled Effects 331
7.2.1 Parameter setting for Exclusion of Certain Model
Parts 331
7.2.2 Flags for Setting Model Options 331
7.3 Model Parameters and their Meaning 333
7.4 Default Values of the Model Parameter 338
7.5 Parameter Extraction Method 343
Bibliography 348
Index 349 |
| any_adam_object | 1 |
| any_adam_object_boolean | 1 |
| author | Mattausch, Hans Jürgen Miura-Mattausch, Mitiko 1949- |
| author_GND | (DE-588)136793428 |
| author_facet | Mattausch, Hans Jürgen Miura-Mattausch, Mitiko 1949- |
| author_role | aut aut |
| author_sort | Mattausch, Hans Jürgen |
| author_variant | h j m hj hjm m m m mmm |
| building | Verbundindex |
| bvnumber | BV035126079 |
| classification_rvk | ZN 4870 |
| ctrlnum | (OCoLC)633410638 (DE-599)BSZ263275787 |
| discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
| discipline_str_mv | Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Book |
| fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01589nam a2200385 c 4500</leader><controlfield tag="001">BV035126079</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">20081208 </controlfield><controlfield tag="007">t</controlfield><controlfield tag="008">081029s2008 d||| |||| 00||| eng d</controlfield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9812568646</subfield><subfield code="9">981-256-864-6</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9789812568649</subfield><subfield code="9">978-981-256-864-9</subfield></datafield><datafield tag="024" ind1="3" ind2=" "><subfield code="a">9789812568649</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)633410638</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BSZ263275787</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-706</subfield><subfield code="a">DE-83</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">ZN 4870</subfield><subfield code="0">(DE-625)157415:</subfield><subfield code="2">rvk</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Mattausch, Hans Jürgen</subfield><subfield code="e">Verfasser</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">The physics and modeling of MOSFETS</subfield><subfield code="b">surface-potential model HiSIM</subfield><subfield code="c">Mitiko Miura-Mattausch ; Hans Jürgen Mattausch ; Tatsuya Ezaki</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">New Jersey [u.a.]</subfield><subfield code="b">World Scientific</subfield><subfield code="c">2008</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">XXII, 352 S.</subfield><subfield code="b">graph. Darst.</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="490" ind1="0" ind2=" "><subfield code="a">International Series on Advances in solid State Electronics and Technology</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Simulation</subfield><subfield code="0">(DE-588)4055072-2</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">MOS-FET</subfield><subfield code="0">(DE-588)4207266-9</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">MOS-FET</subfield><subfield code="0">(DE-588)4207266-9</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="1"><subfield code="a">Simulation</subfield><subfield code="0">(DE-588)4055072-2</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Miura-Mattausch, Mitiko</subfield><subfield code="d">1949-</subfield><subfield code="e">Verfasser</subfield><subfield code="0">(DE-588)136793428</subfield><subfield code="4">aut</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="m">HBZ Datenaustausch</subfield><subfield code="q">application/pdf</subfield><subfield code="u">http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=016793664&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA</subfield><subfield code="3">Inhaltsverzeichnis</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-016793664</subfield></datafield></record></collection> |
| id | DE-604.BV035126079 |
| illustrated | Illustrated |
| index_date | 2024-07-02T22:23:00Z |
| indexdate | 2024-07-09T21:22:55Z |
| institution | BVB |
| isbn | 9812568646 9789812568649 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-016793664 |
| oclc_num | 633410638 |
| open_access_boolean | |
| owner | DE-706 DE-83 |
| owner_facet | DE-706 DE-83 |
| physical | XXII, 352 S. graph. Darst. |
| publishDate | 2008 |
| publishDateSearch | 2008 |
| publishDateSort | 2008 |
| publisher | World Scientific |
| record_format | marc |
| series2 | International Series on Advances in solid State Electronics and Technology |
| spelling | Mattausch, Hans Jürgen Verfasser aut The physics and modeling of MOSFETS surface-potential model HiSIM Mitiko Miura-Mattausch ; Hans Jürgen Mattausch ; Tatsuya Ezaki New Jersey [u.a.] World Scientific 2008 XXII, 352 S. graph. Darst. txt rdacontent n rdamedia nc rdacarrier International Series on Advances in solid State Electronics and Technology Simulation (DE-588)4055072-2 gnd rswk-swf MOS-FET (DE-588)4207266-9 gnd rswk-swf MOS-FET (DE-588)4207266-9 s Simulation (DE-588)4055072-2 s DE-604 Miura-Mattausch, Mitiko 1949- Verfasser (DE-588)136793428 aut HBZ Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=016793664&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Mattausch, Hans Jürgen Miura-Mattausch, Mitiko 1949- The physics and modeling of MOSFETS surface-potential model HiSIM Simulation (DE-588)4055072-2 gnd MOS-FET (DE-588)4207266-9 gnd |
| subject_GND | (DE-588)4055072-2 (DE-588)4207266-9 |
| title | The physics and modeling of MOSFETS surface-potential model HiSIM |
| title_auth | The physics and modeling of MOSFETS surface-potential model HiSIM |
| title_exact_search | The physics and modeling of MOSFETS surface-potential model HiSIM |
| title_exact_search_txtP | The physics and modeling of MOSFETS surface-potential model HiSIM |
| title_full | The physics and modeling of MOSFETS surface-potential model HiSIM Mitiko Miura-Mattausch ; Hans Jürgen Mattausch ; Tatsuya Ezaki |
| title_fullStr | The physics and modeling of MOSFETS surface-potential model HiSIM Mitiko Miura-Mattausch ; Hans Jürgen Mattausch ; Tatsuya Ezaki |
| title_full_unstemmed | The physics and modeling of MOSFETS surface-potential model HiSIM Mitiko Miura-Mattausch ; Hans Jürgen Mattausch ; Tatsuya Ezaki |
| title_short | The physics and modeling of MOSFETS |
| title_sort | the physics and modeling of mosfets surface potential model hisim |
| title_sub | surface-potential model HiSIM |
| topic | Simulation (DE-588)4055072-2 gnd MOS-FET (DE-588)4207266-9 gnd |
| topic_facet | Simulation MOS-FET |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=016793664&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| work_keys_str_mv | AT mattauschhansjurgen thephysicsandmodelingofmosfetssurfacepotentialmodelhisim AT miuramattauschmitiko thephysicsandmodelingofmosfetssurfacepotentialmodelhisim |