Wafer level reliability of advanced CMOS devices and processes:
Gespeichert in:
Format: | Buch |
---|---|
Sprache: | English |
Veröffentlicht: |
New York
Nova Science Publ.
2008
|
Schlagworte: | |
Online-Zugang: | Inhaltsverzeichnis |
Beschreibung: | 195 S. |
ISBN: | 9781604567137 |
Internformat
MARC
LEADER | 00000nam a2200000zc 4500 | ||
---|---|---|---|
001 | BV035093640 | ||
003 | DE-604 | ||
005 | 20081219 | ||
007 | t | ||
008 | 081010s2008 xxu |||| 00||| eng d | ||
010 | |a 2008018218 | ||
020 | |a 9781604567137 |c hardcover |9 978-1-60456-713-7 | ||
035 | |a (OCoLC)226308142 | ||
035 | |a (DE-599)BVBBV035093640 | ||
040 | |a DE-604 |b ger |e aacr | ||
041 | 0 | |a eng | |
044 | |a xxu |c US | ||
049 | |a DE-703 | ||
050 | 0 | |a TK7871.99.M44 | |
082 | 0 | |a 621.3815/2 | |
084 | |a ZN 4960 |0 (DE-625)157426: |2 rvk | ||
245 | 1 | 0 | |a Wafer level reliability of advanced CMOS devices and processes |c Yi Zhao, ed. |
264 | 1 | |a New York |b Nova Science Publ. |c 2008 | |
300 | |a 195 S. | ||
336 | |b txt |2 rdacontent | ||
337 | |b n |2 rdamedia | ||
338 | |b nc |2 rdacarrier | ||
650 | 4 | |a Metal oxide semiconductors, Complementary | |
700 | 1 | |a Zhao, Yi |e Sonstige |4 oth | |
856 | 4 | 2 | |m Digitalisierung UB Bayreuth |q application/pdf |u http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=016761718&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |3 Inhaltsverzeichnis |
999 | |a oai:aleph.bib-bvb.de:BVB01-016761718 |
Datensatz im Suchindex
_version_ | 1804138051945889792 |
---|---|
adam_text | Contents
Preface
Chapter
1
Introduction
Yi Zhao
Chapter
2
Gate Dielectrics
Terence B. Hook
Chapter
3
Hot Carrier Effect
Xinggong Wan
Chapter
4
Electromigration
Yi Zhao
Chapter
5
Negative Bias Temperature Instability (NBTI)
Xinggong Wan
Chapter
6
Plasma Process-Induced Damage
Terence B. Hook
Chapter
7
Reliability of High-k Gate Dielectrics
Yanli Pei
Index
vii
1
19
41
85
105
135
159
189
|
adam_txt |
Contents
Preface
Chapter
1
Introduction
Yi Zhao
Chapter
2
Gate Dielectrics
Terence B. Hook
Chapter
3
Hot Carrier Effect
Xinggong Wan
Chapter
4
Electromigration
Yi Zhao
Chapter
5
Negative Bias Temperature Instability (NBTI)
Xinggong Wan
Chapter
6
Plasma Process-Induced Damage
Terence B. Hook
Chapter
7
Reliability of High-k Gate Dielectrics
Yanli Pei
Index
vii
1
19
41
85
105
135
159
189 |
any_adam_object | 1 |
any_adam_object_boolean | 1 |
building | Verbundindex |
bvnumber | BV035093640 |
callnumber-first | T - Technology |
callnumber-label | TK7871 |
callnumber-raw | TK7871.99.M44 |
callnumber-search | TK7871.99.M44 |
callnumber-sort | TK 47871.99 M44 |
callnumber-subject | TK - Electrical and Nuclear Engineering |
classification_rvk | ZN 4960 |
ctrlnum | (OCoLC)226308142 (DE-599)BVBBV035093640 |
dewey-full | 621.3815/2 |
dewey-hundreds | 600 - Technology (Applied sciences) |
dewey-ones | 621 - Applied physics |
dewey-raw | 621.3815/2 |
dewey-search | 621.3815/2 |
dewey-sort | 3621.3815 12 |
dewey-tens | 620 - Engineering and allied operations |
discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
discipline_str_mv | Elektrotechnik / Elektronik / Nachrichtentechnik |
format | Book |
fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01191nam a2200337zc 4500</leader><controlfield tag="001">BV035093640</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">20081219 </controlfield><controlfield tag="007">t</controlfield><controlfield tag="008">081010s2008 xxu |||| 00||| eng d</controlfield><datafield tag="010" ind1=" " ind2=" "><subfield code="a">2008018218</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9781604567137</subfield><subfield code="c">hardcover</subfield><subfield code="9">978-1-60456-713-7</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)226308142</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV035093640</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">aacr</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="044" ind1=" " ind2=" "><subfield code="a">xxu</subfield><subfield code="c">US</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-703</subfield></datafield><datafield tag="050" ind1=" " ind2="0"><subfield code="a">TK7871.99.M44</subfield></datafield><datafield tag="082" ind1="0" ind2=" "><subfield code="a">621.3815/2</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">ZN 4960</subfield><subfield code="0">(DE-625)157426:</subfield><subfield code="2">rvk</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Wafer level reliability of advanced CMOS devices and processes</subfield><subfield code="c">Yi Zhao, ed.</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">New York</subfield><subfield code="b">Nova Science Publ.</subfield><subfield code="c">2008</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">195 S.</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Metal oxide semiconductors, Complementary</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Zhao, Yi</subfield><subfield code="e">Sonstige</subfield><subfield code="4">oth</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="m">Digitalisierung UB Bayreuth</subfield><subfield code="q">application/pdf</subfield><subfield code="u">http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=016761718&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA</subfield><subfield code="3">Inhaltsverzeichnis</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-016761718</subfield></datafield></record></collection> |
id | DE-604.BV035093640 |
illustrated | Not Illustrated |
index_date | 2024-07-02T22:11:31Z |
indexdate | 2024-07-09T21:22:03Z |
institution | BVB |
isbn | 9781604567137 |
language | English |
lccn | 2008018218 |
oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-016761718 |
oclc_num | 226308142 |
open_access_boolean | |
owner | DE-703 |
owner_facet | DE-703 |
physical | 195 S. |
publishDate | 2008 |
publishDateSearch | 2008 |
publishDateSort | 2008 |
publisher | Nova Science Publ. |
record_format | marc |
spelling | Wafer level reliability of advanced CMOS devices and processes Yi Zhao, ed. New York Nova Science Publ. 2008 195 S. txt rdacontent n rdamedia nc rdacarrier Metal oxide semiconductors, Complementary Zhao, Yi Sonstige oth Digitalisierung UB Bayreuth application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=016761718&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
spellingShingle | Wafer level reliability of advanced CMOS devices and processes Metal oxide semiconductors, Complementary |
title | Wafer level reliability of advanced CMOS devices and processes |
title_auth | Wafer level reliability of advanced CMOS devices and processes |
title_exact_search | Wafer level reliability of advanced CMOS devices and processes |
title_exact_search_txtP | Wafer level reliability of advanced CMOS devices and processes |
title_full | Wafer level reliability of advanced CMOS devices and processes Yi Zhao, ed. |
title_fullStr | Wafer level reliability of advanced CMOS devices and processes Yi Zhao, ed. |
title_full_unstemmed | Wafer level reliability of advanced CMOS devices and processes Yi Zhao, ed. |
title_short | Wafer level reliability of advanced CMOS devices and processes |
title_sort | wafer level reliability of advanced cmos devices and processes |
topic | Metal oxide semiconductors, Complementary |
topic_facet | Metal oxide semiconductors, Complementary |
url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=016761718&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
work_keys_str_mv | AT zhaoyi waferlevelreliabilityofadvancedcmosdevicesandprocesses |