Verfügbarkeit: Solid state electronic devices

Solid state electronic devices:

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	Bhattacharya, D. K. (VerfasserIn), Sharma, Rajnish (VerfasserIn)
Format:	Buch
Sprache:	English
Veröffentlicht:	New Delhi [u.a.] Oxford University Press 2007
Ausgabe:	1. publ.
Schriftenreihe:	Oxford higher education
Schlagworte:	Semiconducteurs - Manuels d'enseignement supérieur Électronique de l'état solide - Manuels d'enseignement supérieur Semiconductors > Textbooks Solid state electronics > Textbooks Halbleiterbauelement
Online-Zugang:	Inhaltsverzeichnis
Beschreibung:	Includes bibliographical references (p. [531]-532) and index
Beschreibung:	xxii, 537 p. ill.
ISBN:	9780195686654 0195686659

Internformat

MARC


LEADER	00000nam a2200000zc 4500
001	BV035069732
003	DE-604
005	20081218
007	t
008	080925s2007 ii a\|\|\| \|\|\|\| 00\|\|\| eng d
010			\|a 2007281659
020			\|a 9780195686654 \|9 978-0-19-568665-4
020			\|a 0195686659 \|9 0-19-568665-9
035			\|a (OCoLC)141385795
035			\|a (DE-599)BVBBV035069732
040			\|a DE-604 \|b ger \|e aacr
041	0		\|a eng
044			\|a ii \|c IN
049			\|a DE-703
050		0	\|a TK7871.85
082	0		\|a 621.381
084			\|a ZN 4800 \|0 (DE-625)157408: \|2 rvk
100	1		\|a Bhattacharya, D. K. \|e Verfasser \|4 aut
245	1	0	\|a Solid state electronic devices \|c D. K. Bhattacharya, Rajnish Sharma
250			\|a 1. publ.
264		1	\|a New Delhi [u.a.] \|b Oxford University Press \|c 2007
300			\|a xxii, 537 p. \|b ill.
336			\|b txt \|2 rdacontent
337			\|b n \|2 rdamedia
338			\|b nc \|2 rdacarrier
490	0		\|a Oxford higher education
500			\|a Includes bibliographical references (p. [531]-532) and index
650		4	\|a Semiconducteurs - Manuels d'enseignement supérieur
650		4	\|a Électronique de l'état solide - Manuels d'enseignement supérieur
650		4	\|a Semiconductors \|v Textbooks
650		4	\|a Solid state electronics \|v Textbooks
650	0	7	\|a Halbleiterbauelement \|0 (DE-588)4113826-0 \|2 gnd \|9 rswk-swf
689	0	0	\|a Halbleiterbauelement \|0 (DE-588)4113826-0 \|D s
689	0		\|5 DE-604
700	1		\|a Sharma, Rajnish \|e Verfasser \|4 aut
856	4	2	\|m Digitalisierung UB Bayreuth \|q application/pdf \|u http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=016738129&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA \|3 Inhaltsverzeichnis
999			\|a oai:aleph.bib-bvb.de:BVB01-016738129

Datensatz im Suchindex

_version_	1804138017439350784
adam_text	Contents Preface v Symbols xv Important Formulae and Expressions xx 1. Electron Dynamics 1 Introduction 2 1.1 Conduction of Electricity through Gases 2 1.2 Motion of Charged Particle in Electric Field 4 Questions 8 Solved Problems 8 1.3 Motion of a Charged Particle in Magnetic Field 10 1.4 Motion of Charged Particle in Combined Electric and Magnetic Field 13 1.5 Cathode-ray Tube 14 Questions 25 Solved Problems 26 Recapitulation 26 Additional Solved Problems 27 Review Exercises 30 2. Growth and Crystal Properties of Semiconductors 33 Introduction 34 2.1 Semiconductor Materials 34 2.2 Types of Solids 34 2.3 Crystal Lattices 35 Questions 41 Solved problems 42 2.4 Atomic Bonding 45 2.5 Imperfections and Impurities is Solids 47 2.6 Bulk Crystal Growth 50 2.7 Epitaxial Growth 52 Solved Problems 56 Recapitulation 57 Additional Solved Problems 59 Review Exercises 61 χ Solid State Electronic Devices 3. Energy Bands and Charge Carriers in Semiconductors 65 Introduction 66 3.1 Bonding Force and Formation of Energy Bands 66 3.2 Е -k Diagrams 69 Questions 74 Solved Problems 75 3.3 Charge Carriers in Semiconductors 76 3.4 Carrier Concentrations in Semiconductors 82 3.5 Carrier Drift 92 3.6 Carrier Diffusion 103 3.7 Graded Impurity Distribution 705 Questions 108 Solved Problems 109 Recapitulation 112 Additional Solved Problems 114 Review Exercises 119 4. Excess Carriers in Semiconductors 124 Introduction 125 4.1 Semiconductor in Equilibrium 125 4.2 Excess Carrier Generation and Recombination 126 4.3 Carrier Lifetime (General Case) 130 Questions 134 Solved Problems 135 4.4 Diffusion and Recombination 137 4.5 Quasi-Fermi Energy Levels 142 4.6 Surface Effects 143 Questions 145 Solved Problems 146 Recapitulation 148 Additional Solved Problems 149 Review Exercises 755 5. p -п Junction 160 Introduction 767 5.1 Fabrication of p -п Junctions 767 5.2 Basic p -п Junction 777 Questions 180 Solved Problems 180 5.3 Reverse-biased p -п Junction 183 5.4 Junctions With Nonuniform Doping 187 5.5 Varactor Diode 797 5.6 Junction Breakdown 792 5.7 Tunnel Diode 197 Contents xi Questions 200 Solved Problems 201 Recapitulation 202 Additional Solved Problems 203 Review Exercises 210 6. p -п Junction Current 214 Introduction 215 6.1 p -п Junction Current Flow 215 Questions 225 Solved Problems 226 6.2 Small-signal Model of p -η Junction 228 6.3 Generation-Recombination Currents 233 6.4 Junction Diode Switching Times 239 Questions 242 Solved Problems 242 Recapitulation 244 Additional Solved Problems 245 Review Exercises 249 7 Metal-Semiconductor Junctions and Hetero-junctions 252 Introduction 253 7.1 Metal-Semiconductor Contacts 253 7.2 Effect of Surface States and Interface 262 7.3 Metal-Semiconductor Ohmic Contacts 264 Questions 265 Solved Problems 266 7.4 Heterojunctions 268 Questions 272 Solved Problems 272 Recapitulation 273 Additional Solved Problems 274 Review Exercises 280 8. Bipolar Junction Transistors 284 Introduction 285 8.1 Fundamentals of Bipolar Junction Transistors 285 8.2 Current Components and Relations 288 8.3 Important Notations and Configurations 289 8.4 Current Gains for Transistor 290 8.5 Minority Carrier Distribution 291 Questions 296 Solved Problems 296 8.6 Models for Bipolar Junction Transistors 297 8.7 Important Configuration of BJT 305 xli Solid State Electronic Devices 8.8 Frequency Limitation for Transistor 309 8.9 High-frequency Transistors 310 8.10 Switching Characteristics of BJT 312 Questions 315 Solved Problems 315 Recapitulation 317 Additional Solved Problems 318 Review Exercises 320 9. Field-effect Transistor 324 Introduction 325 9.1 Junction-field-effect Transistor 325 9.2 Metal-semiconductor Field-effect Transistor 331 Questions 335 Solved Problems 335 9.3 Basic MOS Structure 337 9.4 Capacitance-Voltage Characteristics of MOS Capacitor 345 9.5 MOS Field-effect Transistor 351 Questions 358 Solved Problems 358 Recapitulation 360 Additional Solved Problems 362 Review Exercises 365 Questions 365 Problems 366 10. Opto-electronic Devices 371 Introduction 372 10.1 Optical Absorption 372 10.2 Photovoltaic Cells 375 Questions 384 Solved Problems 385 10.3 Photodetectors 386 10.4 Light-emitting Diodes 393 10.5 Laser Diodes 396 Questions 399 Solved Problems 399 Recapitulation 401 Additional Solved Problems 402 Review Exercises 406 11. Power Devices 409 Introduction 410 11.1 Bipolar Power Transistors 410 Contents xiii 11.2 Power MOSFETs 415 Questions 419 Solved Problems 420 11.3 Heat Sink 422 11.4 Semiconductor Controlled Rectifier 424 11.5 Unijunction Transistor 432 Questions 434 Solved Problems 434 Recapitulation 435 Additional Solved Problems 436 Review Exercises 440 12. Integrated Circuits and Micro-electromechanical Systems 444 Introduction 445 12.1 Passive Components 445 12.2 Bipolar Technology 450 Questions 456 Solved Problems 456 12.3 MOSFET Technology 458 12.4 MESFET Technology 464 12.5 Micro-electromechanical Systems 466 Questions 469 Recapitulation 470 Review Exercises 471 13. Microwave Devices 473 Introduction 474 13.1 Types of Microwave Devices 474 13.2 Working Principle of Gunn and IMPATT Diodes 475 Questions 480 Solved Problems 480 13.3 Operation of TRAPATT and В ARITT Diodes 481 Questions 487 Solved Problems 487 Recapitulation 488 Review Exercises 489 14. Rectifiers and Power Supplies 491 Introduction 492 14.1 Single-phase Rectifiers 492 14.2 Filter Circuits 498 Questions 506 Solved Problems 507 14.3 Voltage Regulators 509 xiv Solid State Electronic Devices 14.4 Switched-mode Power Supply 575 Questions 516 Solved Problems 517 Recapitulation 518 Review Exercises 518 Appendix A Important Physical Constants 521 Appendix В Important Lattice Constants 522 Appendix С Properties of Some Common Semiconductors 523 Appendix D Bandgaps of Some Semiconductors Relative to the Optical Spectrum 524 Appendix E Properties of Silicon Germanium and Gallium Arsenide at 300 К 525 Appendix F Important Properties of Si3N4 and SiO2 at 300 К 527 Appendix G labie of the Error Function 528 Appendix H The Periodic Table of Elements 529 Appendix I International System of Units 530 References 531 Index 533
adam_txt	Contents Preface v Symbols xv Important Formulae and Expressions xx 1. Electron Dynamics 1 Introduction 2 1.1 Conduction of Electricity through Gases 2 1.2 Motion of Charged Particle in Electric Field 4 Questions 8 Solved Problems 8 1.3 Motion of a Charged Particle in Magnetic Field 10 1.4 Motion of Charged Particle in Combined Electric and Magnetic Field 13 1.5 Cathode-ray Tube 14 Questions 25 Solved Problems 26 Recapitulation 26 Additional Solved Problems 27 Review Exercises 30 2. Growth and Crystal Properties of Semiconductors 33 Introduction 34 2.1 Semiconductor Materials 34 2.2 Types of Solids 34 2.3 Crystal Lattices 35 Questions 41 Solved problems 42 2.4 Atomic Bonding 45 2.5 Imperfections and Impurities is Solids 47 2.6 Bulk Crystal Growth 50 2.7 Epitaxial Growth 52 Solved Problems 56 Recapitulation 57 Additional Solved Problems 59 Review Exercises 61 χ Solid State Electronic Devices 3. Energy Bands and Charge Carriers in Semiconductors 65 Introduction 66 3.1 Bonding Force and Formation of Energy Bands 66 3.2 Е -k Diagrams 69 Questions 74 Solved Problems 75 3.3 Charge Carriers in Semiconductors 76 3.4 Carrier Concentrations in Semiconductors 82 3.5 Carrier Drift 92 3.6 Carrier Diffusion 103 3.7 Graded Impurity Distribution 705 Questions 108 Solved Problems 109 Recapitulation 112 Additional Solved Problems 114 Review Exercises 119 4. Excess Carriers in Semiconductors 124 Introduction 125 4.1 Semiconductor in Equilibrium 125 4.2 Excess Carrier Generation and Recombination 126 4.3 Carrier Lifetime (General Case) 130 Questions 134 Solved Problems 135 4.4 Diffusion and Recombination 137 4.5 Quasi-Fermi Energy Levels 142 4.6 Surface Effects 143 Questions 145 Solved Problems 146 Recapitulation 148 Additional Solved Problems 149 Review Exercises 755 5. p -п Junction 160 Introduction 767 5.1 Fabrication of p -п Junctions 767 5.2 Basic p -п Junction 777 Questions 180 Solved Problems 180 5.3 Reverse-biased p -п Junction 183 5.4 Junctions With Nonuniform Doping 187 5.5 Varactor Diode 797 5.6 Junction Breakdown 792 5.7 Tunnel Diode 197 Contents xi Questions 200 Solved Problems 201 Recapitulation 202 Additional Solved Problems 203 Review Exercises 210 6. p -п Junction Current 214 Introduction 215 6.1 p -п Junction Current Flow 215 Questions 225 Solved Problems 226 6.2 Small-signal Model of p -η Junction 228 6.3 Generation-Recombination Currents 233 6.4 Junction Diode Switching Times 239 Questions 242 Solved Problems 242 Recapitulation 244 Additional Solved Problems 245 Review Exercises 249 7 Metal-Semiconductor Junctions and Hetero-junctions 252 Introduction 253 7.1 Metal-Semiconductor Contacts 253 7.2 Effect of Surface States and Interface 262 7.3 Metal-Semiconductor Ohmic Contacts 264 Questions 265 Solved Problems 266 7.4 Heterojunctions 268 Questions 272 Solved Problems 272 Recapitulation 273 Additional Solved Problems 274 Review Exercises 280 8. Bipolar Junction Transistors 284 Introduction 285 8.1 Fundamentals of Bipolar Junction Transistors 285 8.2 Current Components and Relations 288 8.3 Important Notations and Configurations 289 8.4 Current Gains for Transistor 290 8.5 Minority Carrier Distribution 291 Questions 296 Solved Problems 296 8.6 Models for Bipolar Junction Transistors 297 8.7 Important Configuration of BJT 305 xli Solid State Electronic Devices 8.8 Frequency Limitation for Transistor 309 8.9 High-frequency Transistors 310 8.10 Switching Characteristics of BJT 312 Questions 315 Solved Problems 315 Recapitulation 317 Additional Solved Problems 318 Review Exercises 320 9. Field-effect Transistor 324 Introduction 325 9.1 Junction-field-effect Transistor 325 9.2 Metal-semiconductor Field-effect Transistor 331 Questions 335 Solved Problems 335 9.3 Basic MOS Structure 337 9.4 Capacitance-Voltage Characteristics of MOS Capacitor 345 9.5 MOS Field-effect Transistor 351 Questions 358 Solved Problems 358 Recapitulation 360 Additional Solved Problems 362 Review Exercises 365 Questions 365 Problems 366 10. Opto-electronic Devices 371 Introduction 372 10.1 Optical Absorption 372 10.2 Photovoltaic Cells 375 Questions 384 Solved Problems 385 10.3 Photodetectors 386 10.4 Light-emitting Diodes 393 10.5 Laser Diodes 396 Questions 399 Solved Problems 399 Recapitulation 401 Additional Solved Problems 402 Review Exercises 406 11. Power Devices 409 Introduction 410 11.1 Bipolar Power Transistors 410 Contents xiii 11.2 Power MOSFETs 415 Questions 419 Solved Problems 420 11.3 Heat Sink 422 11.4 Semiconductor Controlled Rectifier 424 11.5 Unijunction Transistor 432 Questions 434 Solved Problems 434 Recapitulation 435 Additional Solved Problems 436 Review Exercises 440 12. Integrated Circuits and Micro-electromechanical Systems 444 Introduction 445 12.1 Passive Components 445 12.2 Bipolar Technology 450 Questions 456 Solved Problems 456 12.3 MOSFET Technology 458 12.4 MESFET Technology 464 12.5 Micro-electromechanical Systems 466 Questions 469 Recapitulation 470 Review Exercises 471 13. Microwave Devices 473 Introduction 474 13.1 Types of Microwave Devices 474 13.2 Working Principle of Gunn and IMPATT Diodes 475 Questions 480 Solved Problems 480 13.3 Operation of TRAPATT and В ARITT Diodes 481 Questions 487 Solved Problems 487 Recapitulation 488 Review Exercises 489 14. Rectifiers and Power Supplies 491 Introduction 492 14.1 Single-phase Rectifiers 492 14.2 Filter Circuits 498 Questions 506 Solved Problems 507 14.3 Voltage Regulators 509 xiv Solid State Electronic Devices 14.4 Switched-mode Power Supply 575 Questions 516 Solved Problems 517 Recapitulation 518 Review Exercises 518 Appendix A Important Physical Constants 521 Appendix В Important Lattice Constants 522 Appendix С Properties of Some Common Semiconductors 523 Appendix D Bandgaps of Some Semiconductors Relative to the Optical Spectrum 524 Appendix E Properties of Silicon Germanium and Gallium Arsenide at 300 К 525 Appendix F Important Properties of Si3N4 and SiO2 at 300 К 527 Appendix G labie of the Error Function 528 Appendix H The Periodic Table of Elements 529 Appendix I International System of Units 530 References 531 Index 533
any_adam_object	1
any_adam_object_boolean	1
author	Bhattacharya, D. K. Sharma, Rajnish
author_facet	Bhattacharya, D. K. Sharma, Rajnish
author_role	aut aut
author_sort	Bhattacharya, D. K.
author_variant	d k b dk dkb r s rs
building	Verbundindex
bvnumber	BV035069732
callnumber-first	T - Technology
callnumber-label	TK7871
callnumber-raw	TK7871.85
callnumber-search	TK7871.85
callnumber-sort	TK 47871.85
callnumber-subject	TK - Electrical and Nuclear Engineering
classification_rvk	ZN 4800
ctrlnum	(OCoLC)141385795 (DE-599)BVBBV035069732
dewey-full	621.381
dewey-hundreds	600 - Technology (Applied sciences)
dewey-ones	621 - Applied physics
dewey-raw	621.381
dewey-search	621.381
dewey-sort	3621.381
dewey-tens	620 - Engineering and allied operations
discipline	Elektrotechnik / Elektronik / Nachrichtentechnik
discipline_str_mv	Elektrotechnik / Elektronik / Nachrichtentechnik
edition	1. publ.
format	Book
fullrecord	<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01771nam a2200469zc 4500</leader><controlfield tag="001">BV035069732</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">20081218 </controlfield><controlfield tag="007">t</controlfield><controlfield tag="008">080925s2007 ii a\|\|\| \|\|\|\| 00\|\|\| eng d</controlfield><datafield tag="010" ind1=" " ind2=" "><subfield code="a">2007281659</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9780195686654</subfield><subfield code="9">978-0-19-568665-4</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">0195686659</subfield><subfield code="9">0-19-568665-9</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)141385795</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV035069732</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">aacr</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="044" ind1=" " ind2=" "><subfield code="a">ii</subfield><subfield code="c">IN</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-703</subfield></datafield><datafield tag="050" ind1=" " ind2="0"><subfield code="a">TK7871.85</subfield></datafield><datafield tag="082" ind1="0" ind2=" "><subfield code="a">621.381</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">ZN 4800</subfield><subfield code="0">(DE-625)157408:</subfield><subfield code="2">rvk</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Bhattacharya, D. K.</subfield><subfield code="e">Verfasser</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Solid state electronic devices</subfield><subfield code="c">D. K. Bhattacharya, Rajnish Sharma</subfield></datafield><datafield tag="250" ind1=" " ind2=" "><subfield code="a">1. publ.</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">New Delhi [u.a.]</subfield><subfield code="b">Oxford University Press</subfield><subfield code="c">2007</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">xxii, 537 p.</subfield><subfield code="b">ill.</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="490" ind1="0" ind2=" "><subfield code="a">Oxford higher education</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">Includes bibliographical references (p. [531]-532) and index</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Semiconducteurs - Manuels d'enseignement supérieur</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Électronique de l'état solide - Manuels d'enseignement supérieur</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Semiconductors</subfield><subfield code="v">Textbooks</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Solid state electronics</subfield><subfield code="v">Textbooks</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Halbleiterbauelement</subfield><subfield code="0">(DE-588)4113826-0</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">Halbleiterbauelement</subfield><subfield code="0">(DE-588)4113826-0</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Sharma, Rajnish</subfield><subfield code="e">Verfasser</subfield><subfield code="4">aut</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="m">Digitalisierung UB Bayreuth</subfield><subfield code="q">application/pdf</subfield><subfield code="u">http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=016738129&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA</subfield><subfield code="3">Inhaltsverzeichnis</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-016738129</subfield></datafield></record></collection>
id	DE-604.BV035069732
illustrated	Illustrated
index_date	2024-07-02T22:03:44Z
indexdate	2024-07-09T21:21:30Z
institution	BVB
isbn	9780195686654 0195686659
language	English
lccn	2007281659
oai_aleph_id	oai:aleph.bib-bvb.de:BVB01-016738129
oclc_num	141385795
open_access_boolean
owner	DE-703
owner_facet	DE-703
physical	xxii, 537 p. ill.
publishDate	2007
publishDateSearch	2007
publishDateSort	2007
publisher	Oxford University Press
record_format	marc
series2	Oxford higher education
spelling	Bhattacharya, D. K. Verfasser aut Solid state electronic devices D. K. Bhattacharya, Rajnish Sharma 1. publ. New Delhi [u.a.] Oxford University Press 2007 xxii, 537 p. ill. txt rdacontent n rdamedia nc rdacarrier Oxford higher education Includes bibliographical references (p. [531]-532) and index Semiconducteurs - Manuels d'enseignement supérieur Électronique de l'état solide - Manuels d'enseignement supérieur Semiconductors Textbooks Solid state electronics Textbooks Halbleiterbauelement (DE-588)4113826-0 gnd rswk-swf Halbleiterbauelement (DE-588)4113826-0 s DE-604 Sharma, Rajnish Verfasser aut Digitalisierung UB Bayreuth application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=016738129&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis
spellingShingle	Bhattacharya, D. K. Sharma, Rajnish Solid state electronic devices Semiconducteurs - Manuels d'enseignement supérieur Électronique de l'état solide - Manuels d'enseignement supérieur Semiconductors Textbooks Solid state electronics Textbooks Halbleiterbauelement (DE-588)4113826-0 gnd
subject_GND	(DE-588)4113826-0
title	Solid state electronic devices
title_auth	Solid state electronic devices
title_exact_search	Solid state electronic devices
title_exact_search_txtP	Solid state electronic devices
title_full	Solid state electronic devices D. K. Bhattacharya, Rajnish Sharma
title_fullStr	Solid state electronic devices D. K. Bhattacharya, Rajnish Sharma
title_full_unstemmed	Solid state electronic devices D. K. Bhattacharya, Rajnish Sharma
title_short	Solid state electronic devices
title_sort	solid state electronic devices
topic	Semiconducteurs - Manuels d'enseignement supérieur Électronique de l'état solide - Manuels d'enseignement supérieur Semiconductors Textbooks Solid state electronics Textbooks Halbleiterbauelement (DE-588)4113826-0 gnd
topic_facet	Semiconducteurs - Manuels d'enseignement supérieur Électronique de l'état solide - Manuels d'enseignement supérieur Semiconductors Textbooks Solid state electronics Textbooks Halbleiterbauelement
url	http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=016738129&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA
work_keys_str_mv	AT bhattacharyadk solidstateelectronicdevices AT sharmarajnish solidstateelectronicdevices

Verfügbarkeit

Es ist kein Print-Exemplar vorhanden.

Fernleihe Bestellen Achtung: Nicht im THWS-Bestand! Inhaltsverzeichnis

MARC

Datensatz im Suchindex

Es ist kein Print-Exemplar vorhanden.

Ähnliche Einträge