Principles of gas sensing at semiconductor surfaces:
Saved in:
| Main Author: | |
|---|---|
| Format: | Thesis Book |
| Language: | English |
| Published: |
München
Hieronymus
2008
|
| Edition: | Als Typoskript gedr. |
| Series: | Physik
|
| Subjects: | |
| Online Access: | Inhaltsverzeichnis |
| Physical Description: | [17], 174 S. Ill., graph. Darst. 21 cm |
| ISBN: | 9783897913837 |
Staff View
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Record in the Search Index
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| adam_text | CONTENTS THEOIY RELATED TO SEMICONDUCTOR GAS SENSORS 1 1.1 INTRODUCTION
2 1.2 SEMICONDUCTOR MATERIALS STUDIED 4 1.2.1 METAL OXIDES 4 1.2.2
HYDROGEN-TERMINATED DIAMOND 6 1.2.2.1 HYDROGEN TERMINATION OF DIAMOND
SURFACES 8 1.2.2.2 HOT FILAMENT TECHNIQUE 8 1.2.3 HYDROGENATED AMORPHOUS
SILICON 10 1.2.3.1 GLOW DISCHARGE DEPOSITION OF A-SI:H 10 1.2.3.2
RESISTIVITY AND PHOTOCONDUCTIVITY 12 1.2.3.3 ROLE OF HYDROGEN 14 1.3
ADSORPTION AT SOLID SURFACES 16 1.3.1 PHYSISORPTION 18 1.3.2
CHEMISORPTION 19 1.3.3 ADSORPTION ISOTHERMS 23 1.3.3.1 LANGMUIR ISOTHERM
23 1.3.3.2 TEMKIN ISOTHERM 24 1.3.3.3 BET ISOTHERM 26 1.3.3.4 WATER
ADSORPTION AT SOLID SURFACES 28 1.4 CHEMICAL ADSORPTION AT METAL OXIDES
35 1.5 ADSORPTION AND HETEROGENEOUS CATALYSIS AT PLATINUM SURFACES 38
1.5.1 ADSORPTION AT METALLIC SURFACES 38 1.5.2 CHEMICAL ADSORPTION AT
PLATINUM 40 1.5.3 HETEROGENEOUS CATALYSIS AT PT SURFACES 43 GESCANNT
DURCH BIBLIOGRAFISCHE INFORMATIONEN HTTP://D-NB.INFO/989631672
DIGITALISIERT DURCH FULLY HYDROGENATED DIAMONDS 104 COMBUSTION AT MOX
SURFACES 44 2.1 WORKING PRINCIPLE OF METAL OXIDE GAS SENSORS 45 2.1.1
CHEMISTRY OF ADSORPTION AND REACTION 56 2.1.1.1 CARBON MONOXIDE 56
2.1.1.2 HYDROGEN 57 2.1.1.3 METHANE 57 2.1.1.4NITROGENDIOXIDE 59 2.2
ENHANCEMENT OF MOX SENSORS 60 2.2.1 MORPHOLOGY OF THE SENSITIVE LAYER 60
2.2.2 INTRODUCTION OF CATALYSTS 62 2.3 REACTION TIME CONSTANTS OF MOX
GAS SENSORS 64 2.3.1 MOVING GAS OUTLET 65 2.3.2 REACTION TIME
OBSERVATIONS 69 2.3.3 STAGNATION LAYER EFFECTS ON THE GAS RESPONSE 72
2.3.4 THEORY VS. EXPERIMENTS 74 24 BASELINE DRIFT OF MOX SENSORS 77 2.5
SELECTIVITY OF MOX SENSORS 82 26 IMPROVING THE PERFORMANCE OF MOX
SENSORS 83 2.6.1 NANO-SIZING 85 2.6.1.1 TOP-DOWN APPROACH 85 2.6.1.2
BOTTOM-UP APPROACH 86 2.6.2 MICROSPHERE TEMPLATING OF THIN FILM MOX GAS
SENSORS 90 2.6.3 FILTERING OF GAS SPECIES 92 DISSODATIVE GAS SENSING AT
DIAMOND SURFACES 96 3.1 ORIGIN OF SURFACE CONDUCTIVITY IN DIAMOND 97 3.2
HYDROGEN TERMINATED DIAMOND AS GAS SENSING ELEMENT 103 3.2.1 SURFACE
PREPARATION 103 32.2 REFERENCES 153 3.2.3 PARTIALLY HYDROGENATED
DIAMONDS 109 3.2.4 EFFECT OF UV LIGHT EXPOSURE 114 3.2.5 EFFECT OF
ELECTROLYTE DESORPTION 115 3.2.6 MODEL OF THE HD GAS SENSING EFFECT 117
3.2.7 CATALYTIC EFFECT OF O-TERMINATION 122 3.2.8 CONDUSION 124 3.3
DISSOCIATION AT MOX SURFACES 125 3.3.1 DISSOCIATIVE GAS SENSING WITH MOX
126 3.3.2 EFFECT OF UV LIGHT EXPOSURE 128 3.3.3 EFFECT OF ELECTROLYTE
DESORPTION 129 3.3.4 CONCLUSION 131 GAS SENSING PROPERTIES OF
HYDROGENATED AMORPHOUS SILICON 132 4.1 HYDROGENATED AMORPHOUS SILICON AS
GAS SENSING ELEMENT 133 4.1.1 SAMPLE PREPARATION 133 4.1.2 DISSOCIATIVE
GAS SENSING WITH A-SI:H 134 4.1.3 EFFECT OF VIS LIGHT EXPOSURE 136 4.1.4
EFFECT OF ELECTROLYTE DESORPTION 137 4.1.5 MODEL OF THE A-SI:H GAS
SENSING EFFECT 142 4.1.6 CONCLUSION 146 SUMMARY AND PERSPECTIVE 147 5.1
FINDINGS AND STATEMENTS OF THIS THESIS 148 5.2 PERSPECTIVE OF
COORDINATIVE GAS SENSING AT A-SI:H SURFACES 150 5.3 PERSPECTIVE OF
COORDINATIVE GAS SENSING AT MQX SURFACES 151
|
| adam_txt |
CONTENTS THEOIY RELATED TO SEMICONDUCTOR GAS SENSORS 1 1.1 INTRODUCTION
2 1.2 SEMICONDUCTOR MATERIALS STUDIED 4 1.2.1 METAL OXIDES 4 1.2.2
HYDROGEN-TERMINATED DIAMOND 6 1.2.2.1 HYDROGEN TERMINATION OF DIAMOND
SURFACES 8 1.2.2.2 HOT FILAMENT TECHNIQUE 8 1.2.3 HYDROGENATED AMORPHOUS
SILICON 10 1.2.3.1 GLOW DISCHARGE DEPOSITION OF A-SI:H 10 1.2.3.2
RESISTIVITY AND PHOTOCONDUCTIVITY 12 1.2.3.3 ROLE OF HYDROGEN 14 1.3
ADSORPTION AT SOLID SURFACES 16 1.3.1 PHYSISORPTION 18 1.3.2
CHEMISORPTION 19 1.3.3 ADSORPTION ISOTHERMS 23 1.3.3.1 LANGMUIR ISOTHERM
23 1.3.3.2 TEMKIN ISOTHERM 24 1.3.3.3 BET ISOTHERM 26 1.3.3.4 WATER
ADSORPTION AT SOLID SURFACES 28 1.4 CHEMICAL ADSORPTION AT METAL OXIDES
35 1.5 ADSORPTION AND HETEROGENEOUS CATALYSIS AT PLATINUM SURFACES 38
1.5.1 ADSORPTION AT METALLIC SURFACES 38 1.5.2 CHEMICAL ADSORPTION AT
PLATINUM 40 1.5.3 HETEROGENEOUS CATALYSIS AT PT SURFACES 43 GESCANNT
DURCH BIBLIOGRAFISCHE INFORMATIONEN HTTP://D-NB.INFO/989631672
DIGITALISIERT DURCH FULLY HYDROGENATED DIAMONDS 104 COMBUSTION AT MOX
SURFACES 44 2.1 WORKING PRINCIPLE OF METAL OXIDE GAS SENSORS 45 2.1.1
CHEMISTRY OF ADSORPTION AND REACTION 56 2.1.1.1 CARBON MONOXIDE 56
2.1.1.2 HYDROGEN 57 2.1.1.3 METHANE 57 2.1.1.4NITROGENDIOXIDE 59 2.2
ENHANCEMENT OF MOX SENSORS 60 2.2.1 MORPHOLOGY OF THE SENSITIVE LAYER 60
2.2.2 INTRODUCTION OF CATALYSTS 62 2.3 REACTION TIME CONSTANTS OF MOX
GAS SENSORS 64 2.3.1 MOVING GAS OUTLET 65 2.3.2 REACTION TIME
OBSERVATIONS 69 2.3.3 STAGNATION LAYER EFFECTS ON THE GAS RESPONSE 72
2.3.4 THEORY VS. EXPERIMENTS 74 24 BASELINE DRIFT OF MOX SENSORS 77 2.5
SELECTIVITY OF MOX SENSORS 82 26 IMPROVING THE PERFORMANCE OF MOX
SENSORS 83 2.6.1 NANO-SIZING 85 2.6.1.1 TOP-DOWN APPROACH 85 2.6.1.2
BOTTOM-UP APPROACH 86 2.6.2 MICROSPHERE TEMPLATING OF THIN FILM MOX GAS
SENSORS 90 2.6.3 FILTERING OF GAS SPECIES 92 DISSODATIVE GAS SENSING AT
DIAMOND SURFACES 96 3.1 ORIGIN OF SURFACE CONDUCTIVITY IN DIAMOND 97 3.2
HYDROGEN TERMINATED DIAMOND AS GAS SENSING ELEMENT 103 3.2.1 SURFACE
PREPARATION 103 32.2 REFERENCES 153 3.2.3 PARTIALLY HYDROGENATED
DIAMONDS 109 3.2.4 EFFECT OF UV LIGHT EXPOSURE 114 3.2.5 EFFECT OF
ELECTROLYTE DESORPTION 115 3.2.6 MODEL OF THE HD GAS SENSING EFFECT 117
3.2.7 CATALYTIC EFFECT OF O-TERMINATION 122 3.2.8 CONDUSION 124 3.3
DISSOCIATION AT MOX SURFACES 125 3.3.1 DISSOCIATIVE GAS SENSING WITH MOX
126 3.3.2 EFFECT OF UV LIGHT EXPOSURE 128 3.3.3 EFFECT OF ELECTROLYTE
DESORPTION 129 3.3.4 CONCLUSION 131 GAS SENSING PROPERTIES OF
HYDROGENATED AMORPHOUS SILICON 132 4.1 HYDROGENATED AMORPHOUS SILICON AS
GAS SENSING ELEMENT 133 4.1.1 SAMPLE PREPARATION 133 4.1.2 DISSOCIATIVE
GAS SENSING WITH A-SI:H 134 4.1.3 EFFECT OF VIS LIGHT EXPOSURE 136 4.1.4
EFFECT OF ELECTROLYTE DESORPTION 137 4.1.5 MODEL OF THE A-SI:H GAS
SENSING EFFECT 142 4.1.6 CONCLUSION 146 SUMMARY AND PERSPECTIVE 147 5.1
FINDINGS AND STATEMENTS OF THIS THESIS 148 5.2 PERSPECTIVE OF
COORDINATIVE GAS SENSING AT A-SI:H SURFACES 150 5.3 PERSPECTIVE OF
COORDINATIVE GAS SENSING AT MQX SURFACES 151 |
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| dewey-ones | 537 - Electricity and electronics |
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| discipline | Physik |
| discipline_str_mv | Physik |
| edition | Als Typoskript gedr. |
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| index_date | 2024-07-02T21:43:41Z |
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| institution | BVB |
| isbn | 9783897913837 |
| language | English |
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| spelling | Helwig, Andreas Verfasser aut Principles of gas sensing at semiconductor surfaces Andreas Helwig Als Typoskript gedr. München Hieronymus 2008 [17], 174 S. Ill., graph. Darst. 21 cm txt rdacontent n rdamedia nc rdacarrier Physik Zugl.: Brescia, Univ., Diss. Halbleiteroberfläche (DE-588)4137418-6 gnd rswk-swf Gassensor (DE-588)4156050-4 gnd rswk-swf (DE-588)4113937-9 Hochschulschrift gnd-content Halbleiteroberfläche (DE-588)4137418-6 s Gassensor (DE-588)4156050-4 s DE-604 DNB Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=016679841&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Helwig, Andreas Principles of gas sensing at semiconductor surfaces Halbleiteroberfläche (DE-588)4137418-6 gnd Gassensor (DE-588)4156050-4 gnd |
| subject_GND | (DE-588)4137418-6 (DE-588)4156050-4 (DE-588)4113937-9 |
| title | Principles of gas sensing at semiconductor surfaces |
| title_auth | Principles of gas sensing at semiconductor surfaces |
| title_exact_search | Principles of gas sensing at semiconductor surfaces |
| title_exact_search_txtP | Principles of gas sensing at semiconductor surfaces |
| title_full | Principles of gas sensing at semiconductor surfaces Andreas Helwig |
| title_fullStr | Principles of gas sensing at semiconductor surfaces Andreas Helwig |
| title_full_unstemmed | Principles of gas sensing at semiconductor surfaces Andreas Helwig |
| title_short | Principles of gas sensing at semiconductor surfaces |
| title_sort | principles of gas sensing at semiconductor surfaces |
| topic | Halbleiteroberfläche (DE-588)4137418-6 gnd Gassensor (DE-588)4156050-4 gnd |
| topic_facet | Halbleiteroberfläche Gassensor Hochschulschrift |
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