Physics based analytical modeling of SiGe heterojunction bipolar transistors for high speed integrated circuits:
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Abschlussarbeit Buch |
| Sprache: | English |
| Veröffentlicht: |
Dresden
TUDpress
2006
|
| Schlagworte: | |
| Beschreibung: | XXI, 150 S. graph. Darst. |
| ISBN: | 9783940046017 3940046019 |
Internformat
MARC
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| 003 | DE-604 | ||
| 005 | 20110228 | ||
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| 008 | 110326s2006 d||| m||| 00||| eng d | ||
| 015 | |a 07,H05,1730 |2 dnb | ||
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| 020 | |a 9783940046017 |9 978-3-940046-01-7 | ||
| 020 | |a 3940046019 |9 3-940046-01-9 | ||
| 035 | |a (OCoLC)180737701 | ||
| 035 | |a (DE-599)DNB983439613 | ||
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| 100 | 1 | |a Hung, Tran Hoang |e Verfasser |4 aut | |
| 245 | 1 | 0 | |a Physics based analytical modeling of SiGe heterojunction bipolar transistors for high speed integrated circuits |c Tran Hoang Hung |
| 264 | 1 | |a Dresden |b TUDpress |c 2006 | |
| 300 | |a XXI, 150 S. |b graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 502 | |a Zugl.: Dresden, Techn. Univ., Diss., 2006 | ||
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| 650 | 0 | 7 | |a Modell |0 (DE-588)4039798-1 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Physikalische Eigenschaft |0 (DE-588)4134738-9 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Heterobipolartransistor |0 (DE-588)4254091-4 |2 gnd |9 rswk-swf |
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| 655 | 7 | |0 (DE-588)4113937-9 |a Hochschulschrift |2 gnd-content | |
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Datensatz im Suchindex
| _version_ | 1804145189214748672 |
|---|---|
| any_adam_object | |
| author | Hung, Tran Hoang |
| author_facet | Hung, Tran Hoang |
| author_role | aut |
| author_sort | Hung, Tran Hoang |
| author_variant | t h h th thh |
| building | Verbundindex |
| bvnumber | BV026592860 |
| ctrlnum | (OCoLC)180737701 (DE-599)DNB983439613 |
| dewey-full | 621.381528 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
| dewey-raw | 621.381528 |
| dewey-search | 621.381528 |
| dewey-sort | 3621.381528 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Maschinenbau / Maschinenwesen Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Thesis Book |
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| id | DE-604.BV026592860 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T23:15:29Z |
| institution | BVB |
| isbn | 9783940046017 3940046019 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-022149886 |
| oclc_num | 180737701 |
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| owner | DE-188 |
| owner_facet | DE-188 |
| physical | XXI, 150 S. graph. Darst. |
| publishDate | 2006 |
| publishDateSearch | 2006 |
| publishDateSort | 2006 |
| publisher | TUDpress |
| record_format | marc |
| spelling | Hung, Tran Hoang Verfasser aut Physics based analytical modeling of SiGe heterojunction bipolar transistors for high speed integrated circuits Tran Hoang Hung Dresden TUDpress 2006 XXI, 150 S. graph. Darst. txt rdacontent n rdamedia nc rdacarrier Zugl.: Dresden, Techn. Univ., Diss., 2006 Silicium (DE-588)4077445-4 gnd rswk-swf Modell (DE-588)4039798-1 gnd rswk-swf Physikalische Eigenschaft (DE-588)4134738-9 gnd rswk-swf Heterobipolartransistor (DE-588)4254091-4 gnd rswk-swf Kleinsignalverhalten (DE-588)4164165-6 gnd rswk-swf Germanium (DE-588)4135644-5 gnd rswk-swf (DE-588)4113937-9 Hochschulschrift gnd-content Silicium (DE-588)4077445-4 s Germanium (DE-588)4135644-5 s Heterobipolartransistor (DE-588)4254091-4 s Kleinsignalverhalten (DE-588)4164165-6 s Physikalische Eigenschaft (DE-588)4134738-9 s Modell (DE-588)4039798-1 s DE-604 |
| spellingShingle | Hung, Tran Hoang Physics based analytical modeling of SiGe heterojunction bipolar transistors for high speed integrated circuits Silicium (DE-588)4077445-4 gnd Modell (DE-588)4039798-1 gnd Physikalische Eigenschaft (DE-588)4134738-9 gnd Heterobipolartransistor (DE-588)4254091-4 gnd Kleinsignalverhalten (DE-588)4164165-6 gnd Germanium (DE-588)4135644-5 gnd |
| subject_GND | (DE-588)4077445-4 (DE-588)4039798-1 (DE-588)4134738-9 (DE-588)4254091-4 (DE-588)4164165-6 (DE-588)4135644-5 (DE-588)4113937-9 |
| title | Physics based analytical modeling of SiGe heterojunction bipolar transistors for high speed integrated circuits |
| title_auth | Physics based analytical modeling of SiGe heterojunction bipolar transistors for high speed integrated circuits |
| title_exact_search | Physics based analytical modeling of SiGe heterojunction bipolar transistors for high speed integrated circuits |
| title_full | Physics based analytical modeling of SiGe heterojunction bipolar transistors for high speed integrated circuits Tran Hoang Hung |
| title_fullStr | Physics based analytical modeling of SiGe heterojunction bipolar transistors for high speed integrated circuits Tran Hoang Hung |
| title_full_unstemmed | Physics based analytical modeling of SiGe heterojunction bipolar transistors for high speed integrated circuits Tran Hoang Hung |
| title_short | Physics based analytical modeling of SiGe heterojunction bipolar transistors for high speed integrated circuits |
| title_sort | physics based analytical modeling of sige heterojunction bipolar transistors for high speed integrated circuits |
| topic | Silicium (DE-588)4077445-4 gnd Modell (DE-588)4039798-1 gnd Physikalische Eigenschaft (DE-588)4134738-9 gnd Heterobipolartransistor (DE-588)4254091-4 gnd Kleinsignalverhalten (DE-588)4164165-6 gnd Germanium (DE-588)4135644-5 gnd |
| topic_facet | Silicium Modell Physikalische Eigenschaft Heterobipolartransistor Kleinsignalverhalten Germanium Hochschulschrift |
| work_keys_str_mv | AT hungtranhoang physicsbasedanalyticalmodelingofsigeheterojunctionbipolartransistorsforhighspeedintegratedcircuits |