Low temperature grown inP-based HFET: characterization and modelling
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Abschlussarbeit Buch |
| Sprache: | English |
| Veröffentlicht: |
2001
|
| Schlagworte: | |
| Beschreibung: | VI, 130 S. graph. Darst. |
Internformat
MARC
| LEADER | 00000nam a2200000 c 4500 | ||
|---|---|---|---|
| 001 | BV026385576 | ||
| 003 | DE-604 | ||
| 005 | 20110228 | ||
| 007 | t | ||
| 008 | 110326s2001 d||| m||| 00||| eng d | ||
| 015 | |a 01,H11,2120 |2 dnb | ||
| 035 | |a (OCoLC)722819287 | ||
| 035 | |a (DE-599)BVBBV026385576 | ||
| 040 | |a DE-604 |b ger |e rakwb | ||
| 041 | 0 | |a eng | |
| 049 | |a DE-188 | ||
| 100 | 1 | |a Lee, Li-heng |e Verfasser |4 aut | |
| 245 | 1 | 0 | |a Low temperature grown inP-based HFET |b characterization and modelling |c vorgelegt von Li-heng Lee |
| 264 | 1 | |c 2001 | |
| 300 | |a VI, 130 S. |b graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 502 | |a Ulm, Univ., Diss., 2001 | ||
| 650 | 0 | 7 | |a Feldeffekttransistor |0 (DE-588)4131472-4 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Aluminiumarsenid |0 (DE-588)4324566-3 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Heterostruktur-Bauelement |0 (DE-588)4236378-0 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Niedrigtemperatur |0 (DE-588)4417434-2 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Indiumphosphid |0 (DE-588)4161535-9 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Indiumarsenid |0 (DE-588)4249718-8 |2 gnd |9 rswk-swf |
| 655 | 7 | |0 (DE-588)4113937-9 |a Hochschulschrift |2 gnd-content | |
| 689 | 0 | 0 | |a Indiumarsenid |0 (DE-588)4249718-8 |D s |
| 689 | 0 | 1 | |a Aluminiumarsenid |0 (DE-588)4324566-3 |D s |
| 689 | 0 | 2 | |a Indiumphosphid |0 (DE-588)4161535-9 |D s |
| 689 | 0 | 3 | |a Niedrigtemperatur |0 (DE-588)4417434-2 |D s |
| 689 | 0 | 4 | |a Heterostruktur-Bauelement |0 (DE-588)4236378-0 |D s |
| 689 | 0 | 5 | |a Feldeffekttransistor |0 (DE-588)4131472-4 |D s |
| 689 | 0 | |5 DE-188 | |
| 999 | |a oai:aleph.bib-bvb.de:BVB01-021963127 | ||
Datensatz im Suchindex
| _version_ | 1804144901473959936 |
|---|---|
| any_adam_object | |
| author | Lee, Li-heng |
| author_facet | Lee, Li-heng |
| author_role | aut |
| author_sort | Lee, Li-heng |
| author_variant | l h l lhl |
| building | Verbundindex |
| bvnumber | BV026385576 |
| ctrlnum | (OCoLC)722819287 (DE-599)BVBBV026385576 |
| format | Thesis Book |
| fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01590nam a2200433 c 4500</leader><controlfield tag="001">BV026385576</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">20110228 </controlfield><controlfield tag="007">t</controlfield><controlfield tag="008">110326s2001 d||| m||| 00||| eng d</controlfield><datafield tag="015" ind1=" " ind2=" "><subfield code="a">01,H11,2120</subfield><subfield code="2">dnb</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)722819287</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV026385576</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-188</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Lee, Li-heng</subfield><subfield code="e">Verfasser</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Low temperature grown inP-based HFET</subfield><subfield code="b">characterization and modelling</subfield><subfield code="c">vorgelegt von Li-heng Lee</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2001</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">VI, 130 S.</subfield><subfield code="b">graph. Darst.</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="502" ind1=" " ind2=" "><subfield code="a">Ulm, Univ., Diss., 2001</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Feldeffekttransistor</subfield><subfield code="0">(DE-588)4131472-4</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Aluminiumarsenid</subfield><subfield code="0">(DE-588)4324566-3</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Heterostruktur-Bauelement</subfield><subfield code="0">(DE-588)4236378-0</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Niedrigtemperatur</subfield><subfield code="0">(DE-588)4417434-2</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Indiumphosphid</subfield><subfield code="0">(DE-588)4161535-9</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Indiumarsenid</subfield><subfield code="0">(DE-588)4249718-8</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="655" ind1=" " ind2="7"><subfield code="0">(DE-588)4113937-9</subfield><subfield code="a">Hochschulschrift</subfield><subfield code="2">gnd-content</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">Indiumarsenid</subfield><subfield code="0">(DE-588)4249718-8</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="1"><subfield code="a">Aluminiumarsenid</subfield><subfield code="0">(DE-588)4324566-3</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="2"><subfield code="a">Indiumphosphid</subfield><subfield code="0">(DE-588)4161535-9</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="3"><subfield code="a">Niedrigtemperatur</subfield><subfield code="0">(DE-588)4417434-2</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="4"><subfield code="a">Heterostruktur-Bauelement</subfield><subfield code="0">(DE-588)4236378-0</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="5"><subfield code="a">Feldeffekttransistor</subfield><subfield code="0">(DE-588)4131472-4</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="5">DE-188</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-021963127</subfield></datafield></record></collection> |
| genre | (DE-588)4113937-9 Hochschulschrift gnd-content |
| genre_facet | Hochschulschrift |
| id | DE-604.BV026385576 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T23:10:55Z |
| institution | BVB |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-021963127 |
| oclc_num | 722819287 |
| open_access_boolean | |
| owner | DE-188 |
| owner_facet | DE-188 |
| physical | VI, 130 S. graph. Darst. |
| publishDate | 2001 |
| publishDateSearch | 2001 |
| publishDateSort | 2001 |
| record_format | marc |
| spelling | Lee, Li-heng Verfasser aut Low temperature grown inP-based HFET characterization and modelling vorgelegt von Li-heng Lee 2001 VI, 130 S. graph. Darst. txt rdacontent n rdamedia nc rdacarrier Ulm, Univ., Diss., 2001 Feldeffekttransistor (DE-588)4131472-4 gnd rswk-swf Aluminiumarsenid (DE-588)4324566-3 gnd rswk-swf Heterostruktur-Bauelement (DE-588)4236378-0 gnd rswk-swf Niedrigtemperatur (DE-588)4417434-2 gnd rswk-swf Indiumphosphid (DE-588)4161535-9 gnd rswk-swf Indiumarsenid (DE-588)4249718-8 gnd rswk-swf (DE-588)4113937-9 Hochschulschrift gnd-content Indiumarsenid (DE-588)4249718-8 s Aluminiumarsenid (DE-588)4324566-3 s Indiumphosphid (DE-588)4161535-9 s Niedrigtemperatur (DE-588)4417434-2 s Heterostruktur-Bauelement (DE-588)4236378-0 s Feldeffekttransistor (DE-588)4131472-4 s DE-188 |
| spellingShingle | Lee, Li-heng Low temperature grown inP-based HFET characterization and modelling Feldeffekttransistor (DE-588)4131472-4 gnd Aluminiumarsenid (DE-588)4324566-3 gnd Heterostruktur-Bauelement (DE-588)4236378-0 gnd Niedrigtemperatur (DE-588)4417434-2 gnd Indiumphosphid (DE-588)4161535-9 gnd Indiumarsenid (DE-588)4249718-8 gnd |
| subject_GND | (DE-588)4131472-4 (DE-588)4324566-3 (DE-588)4236378-0 (DE-588)4417434-2 (DE-588)4161535-9 (DE-588)4249718-8 (DE-588)4113937-9 |
| title | Low temperature grown inP-based HFET characterization and modelling |
| title_auth | Low temperature grown inP-based HFET characterization and modelling |
| title_exact_search | Low temperature grown inP-based HFET characterization and modelling |
| title_full | Low temperature grown inP-based HFET characterization and modelling vorgelegt von Li-heng Lee |
| title_fullStr | Low temperature grown inP-based HFET characterization and modelling vorgelegt von Li-heng Lee |
| title_full_unstemmed | Low temperature grown inP-based HFET characterization and modelling vorgelegt von Li-heng Lee |
| title_short | Low temperature grown inP-based HFET |
| title_sort | low temperature grown inp based hfet characterization and modelling |
| title_sub | characterization and modelling |
| topic | Feldeffekttransistor (DE-588)4131472-4 gnd Aluminiumarsenid (DE-588)4324566-3 gnd Heterostruktur-Bauelement (DE-588)4236378-0 gnd Niedrigtemperatur (DE-588)4417434-2 gnd Indiumphosphid (DE-588)4161535-9 gnd Indiumarsenid (DE-588)4249718-8 gnd |
| topic_facet | Feldeffekttransistor Aluminiumarsenid Heterostruktur-Bauelement Niedrigtemperatur Indiumphosphid Indiumarsenid Hochschulschrift |
| work_keys_str_mv | AT leeliheng lowtemperaturegrowninpbasedhfetcharacterizationandmodelling |