Ion implantation in semiconductors:
Gespeichert in:
| Hauptverfasser: | , |
|---|---|
| Format: | Buch |
| Sprache: | English |
| Veröffentlicht: |
Brookfield [u.a.]
Trans Tech Publ.
1988
|
| Schlagworte: | |
| Beschreibung: | Previously publ. in: Diffusion and defect data: Part B: Solid state phenomena |
| Beschreibung: | V, 473 S. Ill., graph. Darst. |
| ISBN: | 0878495754 |
Internformat
MARC
| LEADER | 00000nam a2200000 c 4500 | ||
|---|---|---|---|
| 001 | BV025886502 | ||
| 003 | DE-604 | ||
| 005 | 20140319 | ||
| 007 | t | ||
| 008 | 100417s1988 ad|| |||| 00||| eng d | ||
| 020 | |a 0878495754 |9 0-87849-575-4 | ||
| 035 | |a (OCoLC)877904004 | ||
| 035 | |a (DE-599)BVBBV025886502 | ||
| 040 | |a DE-604 |b ger |e rakwb | ||
| 041 | 0 | |a eng | |
| 049 | |a DE-11 |a DE-703 |a DE-83 | ||
| 084 | |a UP 3000 |0 (DE-625)146369: |2 rvk | ||
| 084 | |a UP 9350 |0 (DE-625)146462: |2 rvk | ||
| 084 | |a ZN 4180 |0 (DE-625)157370: |2 rvk | ||
| 100 | 1 | |a Stievenard, D. |e Verfasser |4 aut | |
| 245 | 1 | 0 | |a Ion implantation in semiconductors |c D. Stievenard ; J. C. Bourgoin |
| 264 | 1 | |a Brookfield [u.a.] |b Trans Tech Publ. |c 1988 | |
| 300 | |a V, 473 S. |b Ill., graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 500 | |a Previously publ. in: Diffusion and defect data: Part B: Solid state phenomena | ||
| 650 | 0 | 7 | |a Halbleiterphysik |0 (DE-588)4113829-6 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Halbleiter |0 (DE-588)4022993-2 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Ionenimplantation |0 (DE-588)4027606-5 |2 gnd |9 rswk-swf |
| 655 | 7 | |0 (DE-588)4143413-4 |a Aufsatzsammlung |2 gnd-content | |
| 689 | 0 | 0 | |a Halbleiter |0 (DE-588)4022993-2 |D s |
| 689 | 0 | 1 | |a Ionenimplantation |0 (DE-588)4027606-5 |D s |
| 689 | 0 | |5 DE-604 | |
| 689 | 1 | 0 | |a Ionenimplantation |0 (DE-588)4027606-5 |D s |
| 689 | 1 | 1 | |a Halbleiterphysik |0 (DE-588)4113829-6 |D s |
| 689 | 1 | |5 DE-604 | |
| 700 | 1 | |a Bourgoin, J. C. |e Verfasser |4 aut | |
| 999 | |a oai:aleph.bib-bvb.de:BVB01-019133185 | ||
Datensatz im Suchindex
| _version_ | 1804141345547223040 |
|---|---|
| any_adam_object | |
| author | Stievenard, D. Bourgoin, J. C. |
| author_facet | Stievenard, D. Bourgoin, J. C. |
| author_role | aut aut |
| author_sort | Stievenard, D. |
| author_variant | d s ds j c b jc jcb |
| building | Verbundindex |
| bvnumber | BV025886502 |
| classification_rvk | UP 3000 UP 9350 ZN 4180 |
| ctrlnum | (OCoLC)877904004 (DE-599)BVBBV025886502 |
| discipline | Physik Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Book |
| fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01552nam a2200433 c 4500</leader><controlfield tag="001">BV025886502</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">20140319 </controlfield><controlfield tag="007">t</controlfield><controlfield tag="008">100417s1988 ad|| |||| 00||| eng d</controlfield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">0878495754</subfield><subfield code="9">0-87849-575-4</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)877904004</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV025886502</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-11</subfield><subfield code="a">DE-703</subfield><subfield code="a">DE-83</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">UP 3000</subfield><subfield code="0">(DE-625)146369:</subfield><subfield code="2">rvk</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">UP 9350</subfield><subfield code="0">(DE-625)146462:</subfield><subfield code="2">rvk</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">ZN 4180</subfield><subfield code="0">(DE-625)157370:</subfield><subfield code="2">rvk</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Stievenard, D.</subfield><subfield code="e">Verfasser</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Ion implantation in semiconductors</subfield><subfield code="c">D. Stievenard ; J. C. Bourgoin</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">Brookfield [u.a.]</subfield><subfield code="b">Trans Tech Publ.</subfield><subfield code="c">1988</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">V, 473 S.</subfield><subfield code="b">Ill., graph. Darst.</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">Previously publ. in: Diffusion and defect data: Part B: Solid state phenomena</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Halbleiterphysik</subfield><subfield code="0">(DE-588)4113829-6</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Halbleiter</subfield><subfield code="0">(DE-588)4022993-2</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Ionenimplantation</subfield><subfield code="0">(DE-588)4027606-5</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="655" ind1=" " ind2="7"><subfield code="0">(DE-588)4143413-4</subfield><subfield code="a">Aufsatzsammlung</subfield><subfield code="2">gnd-content</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">Halbleiter</subfield><subfield code="0">(DE-588)4022993-2</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="1"><subfield code="a">Ionenimplantation</subfield><subfield code="0">(DE-588)4027606-5</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="689" ind1="1" ind2="0"><subfield code="a">Ionenimplantation</subfield><subfield code="0">(DE-588)4027606-5</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="1" ind2="1"><subfield code="a">Halbleiterphysik</subfield><subfield code="0">(DE-588)4113829-6</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="1" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Bourgoin, J. C.</subfield><subfield code="e">Verfasser</subfield><subfield code="4">aut</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-019133185</subfield></datafield></record></collection> |
| genre | (DE-588)4143413-4 Aufsatzsammlung gnd-content |
| genre_facet | Aufsatzsammlung |
| id | DE-604.BV025886502 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T22:14:24Z |
| institution | BVB |
| isbn | 0878495754 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-019133185 |
| oclc_num | 877904004 |
| open_access_boolean | |
| owner | DE-11 DE-703 DE-83 |
| owner_facet | DE-11 DE-703 DE-83 |
| physical | V, 473 S. Ill., graph. Darst. |
| publishDate | 1988 |
| publishDateSearch | 1988 |
| publishDateSort | 1988 |
| publisher | Trans Tech Publ. |
| record_format | marc |
| spelling | Stievenard, D. Verfasser aut Ion implantation in semiconductors D. Stievenard ; J. C. Bourgoin Brookfield [u.a.] Trans Tech Publ. 1988 V, 473 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Previously publ. in: Diffusion and defect data: Part B: Solid state phenomena Halbleiterphysik (DE-588)4113829-6 gnd rswk-swf Halbleiter (DE-588)4022993-2 gnd rswk-swf Ionenimplantation (DE-588)4027606-5 gnd rswk-swf (DE-588)4143413-4 Aufsatzsammlung gnd-content Halbleiter (DE-588)4022993-2 s Ionenimplantation (DE-588)4027606-5 s DE-604 Halbleiterphysik (DE-588)4113829-6 s Bourgoin, J. C. Verfasser aut |
| spellingShingle | Stievenard, D. Bourgoin, J. C. Ion implantation in semiconductors Halbleiterphysik (DE-588)4113829-6 gnd Halbleiter (DE-588)4022993-2 gnd Ionenimplantation (DE-588)4027606-5 gnd |
| subject_GND | (DE-588)4113829-6 (DE-588)4022993-2 (DE-588)4027606-5 (DE-588)4143413-4 |
| title | Ion implantation in semiconductors |
| title_auth | Ion implantation in semiconductors |
| title_exact_search | Ion implantation in semiconductors |
| title_full | Ion implantation in semiconductors D. Stievenard ; J. C. Bourgoin |
| title_fullStr | Ion implantation in semiconductors D. Stievenard ; J. C. Bourgoin |
| title_full_unstemmed | Ion implantation in semiconductors D. Stievenard ; J. C. Bourgoin |
| title_short | Ion implantation in semiconductors |
| title_sort | ion implantation in semiconductors |
| topic | Halbleiterphysik (DE-588)4113829-6 gnd Halbleiter (DE-588)4022993-2 gnd Ionenimplantation (DE-588)4027606-5 gnd |
| topic_facet | Halbleiterphysik Halbleiter Ionenimplantation Aufsatzsammlung |
| work_keys_str_mv | AT stievenardd ionimplantationinsemiconductors AT bourgoinjc ionimplantationinsemiconductors |