Verfügbarkeit: Analytical techniques for the characterization of compound semiconductors

Analytical techniques for the characterization of compound semiconductors: proceedings of symposium D on analytical techniques for the characterization of compound semiconductors of the 1990 E-MRS fall conference, Strasbourg, France, November 27-30, 1990

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Bibliographische Detailangaben
Weitere Verfasser:	Bastard, G. (HerausgeberIn)
Format:	Tagungsbericht Buch
Sprache:	English
Veröffentlicht:	Amsterdam [u.a.] North-Holl. 1991
Schriftenreihe:	European Materials Research Society symposia proceedings 21
Schlagworte:	Halbleiterphysik Elektrische Eigenschaft Charakterisierung Optische Eigenschaft Werkstoffforschung Halbleiter Kristallstruktur Verbindungshalbleiter Konferenz Konferenzschrift
Beschreibung:	XVI, 537 S.
ISBN:	044489196X

Internformat

MARC


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Datensatz im Suchindex

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spelling	Analytical techniques for the characterization of compound semiconductors proceedings of symposium D on analytical techniques for the characterization of compound semiconductors of the 1990 E-MRS fall conference, Strasbourg, France, November 27-30, 1990 ed by G. Bastard ... Amsterdam [u.a.] North-Holl. 1991 XVI, 537 S. txt rdacontent n rdamedia nc rdacarrier European Materials Research Society symposia proceedings 21 Halbleiterphysik (DE-588)4113829-6 gnd rswk-swf Elektrische Eigenschaft (DE-588)4193812-4 gnd rswk-swf Charakterisierung (DE-588)4069926-2 gnd rswk-swf Optische Eigenschaft (DE-588)4123887-4 gnd rswk-swf Werkstoffforschung (DE-588)4189670-1 gnd rswk-swf Halbleiter (DE-588)4022993-2 gnd rswk-swf Kristallstruktur (DE-588)4136176-3 gnd rswk-swf Verbindungshalbleiter (DE-588)4062623-4 gnd rswk-swf Konferenz (DE-588)4032055-8 gnd rswk-swf (DE-588)1071861417 Konferenzschrift gnd-content Verbindungshalbleiter (DE-588)4062623-4 s Charakterisierung (DE-588)4069926-2 s 1\p DE-604 Halbleiter (DE-588)4022993-2 s 2\p DE-604 Optische Eigenschaft (DE-588)4123887-4 s 3\p DE-604 Kristallstruktur (DE-588)4136176-3 s 4\p DE-604 Werkstoffforschung (DE-588)4189670-1 s 5\p DE-604 Halbleiterphysik (DE-588)4113829-6 s 6\p DE-604 Konferenz (DE-588)4032055-8 s 7\p DE-604 Elektrische Eigenschaft (DE-588)4193812-4 s 8\p DE-604 Bastard, G. edt Symposium on Analytical Techniques for the Characterization of Compound Semiconductors 1990 Straßburg Sonstige (DE-588)3007978-0 oth European Materials Research Society European Materials Research Society symposia proceedings 21 (DE-604)BV004201591 21 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk 2\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk 3\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk 4\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk 5\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk 6\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk 7\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk 8\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk
spellingShingle	Analytical techniques for the characterization of compound semiconductors proceedings of symposium D on analytical techniques for the characterization of compound semiconductors of the 1990 E-MRS fall conference, Strasbourg, France, November 27-30, 1990 Halbleiterphysik (DE-588)4113829-6 gnd Elektrische Eigenschaft (DE-588)4193812-4 gnd Charakterisierung (DE-588)4069926-2 gnd Optische Eigenschaft (DE-588)4123887-4 gnd Werkstoffforschung (DE-588)4189670-1 gnd Halbleiter (DE-588)4022993-2 gnd Kristallstruktur (DE-588)4136176-3 gnd Verbindungshalbleiter (DE-588)4062623-4 gnd Konferenz (DE-588)4032055-8 gnd
subject_GND	(DE-588)4113829-6 (DE-588)4193812-4 (DE-588)4069926-2 (DE-588)4123887-4 (DE-588)4189670-1 (DE-588)4022993-2 (DE-588)4136176-3 (DE-588)4062623-4 (DE-588)4032055-8 (DE-588)1071861417
title	Analytical techniques for the characterization of compound semiconductors proceedings of symposium D on analytical techniques for the characterization of compound semiconductors of the 1990 E-MRS fall conference, Strasbourg, France, November 27-30, 1990
title_auth	Analytical techniques for the characterization of compound semiconductors proceedings of symposium D on analytical techniques for the characterization of compound semiconductors of the 1990 E-MRS fall conference, Strasbourg, France, November 27-30, 1990
title_exact_search	Analytical techniques for the characterization of compound semiconductors proceedings of symposium D on analytical techniques for the characterization of compound semiconductors of the 1990 E-MRS fall conference, Strasbourg, France, November 27-30, 1990
title_full	Analytical techniques for the characterization of compound semiconductors proceedings of symposium D on analytical techniques for the characterization of compound semiconductors of the 1990 E-MRS fall conference, Strasbourg, France, November 27-30, 1990 ed by G. Bastard ...
title_fullStr	Analytical techniques for the characterization of compound semiconductors proceedings of symposium D on analytical techniques for the characterization of compound semiconductors of the 1990 E-MRS fall conference, Strasbourg, France, November 27-30, 1990 ed by G. Bastard ...
title_full_unstemmed	Analytical techniques for the characterization of compound semiconductors proceedings of symposium D on analytical techniques for the characterization of compound semiconductors of the 1990 E-MRS fall conference, Strasbourg, France, November 27-30, 1990 ed by G. Bastard ...
title_short	Analytical techniques for the characterization of compound semiconductors
title_sort	analytical techniques for the characterization of compound semiconductors proceedings of symposium d on analytical techniques for the characterization of compound semiconductors of the 1990 e mrs fall conference strasbourg france november 27 30 1990
title_sub	proceedings of symposium D on analytical techniques for the characterization of compound semiconductors of the 1990 E-MRS fall conference, Strasbourg, France, November 27-30, 1990
topic	Halbleiterphysik (DE-588)4113829-6 gnd Elektrische Eigenschaft (DE-588)4193812-4 gnd Charakterisierung (DE-588)4069926-2 gnd Optische Eigenschaft (DE-588)4123887-4 gnd Werkstoffforschung (DE-588)4189670-1 gnd Halbleiter (DE-588)4022993-2 gnd Kristallstruktur (DE-588)4136176-3 gnd Verbindungshalbleiter (DE-588)4062623-4 gnd Konferenz (DE-588)4032055-8 gnd
topic_facet	Halbleiterphysik Elektrische Eigenschaft Charakterisierung Optische Eigenschaft Werkstoffforschung Halbleiter Kristallstruktur Verbindungshalbleiter Konferenz Konferenzschrift
volume_link	(DE-604)BV004201591
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