High energy ion beam analysis of solids:
Gespeichert in:
Weitere Verfasser: | |
---|---|
Format: | Buch |
Sprache: | German |
Veröffentlicht: |
Berlin
Akad.-Verl.
1988
|
Schriftenreihe: | Physical research
6 |
Schlagworte: | |
Online-Zugang: | Inhaltsverzeichnis |
Beschreibung: | Literaturverz. S. 361 - 367 |
Beschreibung: | 376 S. |
ISBN: | 3055004973 |
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245 | 1 | 0 | |a High energy ion beam analysis of solids |c ed. by Gerhard Götz ; Konrad Gärtner. [Authors: Achim Dittmar ...] |
264 | 1 | |a Berlin |b Akad.-Verl. |c 1988 | |
300 | |a 376 S. | ||
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Datensatz im Suchindex
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adam_text | JHJIGH ENERG
Y IO
N BEA
M
ANALYSI
S O
F SOLID
S
EDITED BY
GERHARD GOETZ/KONRAD GAERTNER
WIT
H 178 FIGURES AND 33 TABLES
AKADEMIE-VERLAG BERLIN
1988
CONTENT
S
CHAPTER 1 THEORETICAL FUNDAMENTALS 13
BY K. GAERTNER
1.1. INTERACTION PROCESSES 14
1.1.1. NUCLEAR SCATTERING 15
1.1.1.1. SCATTERING KINEMATICS 15
1.1.1.2. KINEMATIC FACTORS 17
1.1.1.3. SCATTERING DYNAMICS 18
1.1.1.4. INTERATOMIC INTERACTION POTENTIAL 20
1.1.1.5. DIFFERENTIAL SCATTERING CROSS SECTION 22
1.1.1.6. NUCLEAR ENERGY LOSS 27
1.1.2. ELECTRONIC SCATTERING 28
1.1.2.1. ELECTRONIC ENERGY LOSS 28
1.1.2.2. X-RAY CROSS SECTION 31
1.2. AMORPHOUS AND POLYCRISTALLINE SOLIDS 33
1.2.1. MEAN ENERGY, LOSS 33
1.2.1.1. NUCLEAR STOPPING 35
1.2.1.2. HIGH ENERGY ELECTRONIC STOPPING 37
1.2.1.3. LOW ENERGY ELECTRONIC STOPPING 39
1.2.1.4. GENERAL FORMULAE FOR ELECTRONIC STOPPING 42
1.2.2. ENERGY STRAGGLING 46
1.2.3. MEAN ENERGY LOSS AND ENERGY STRAGGLING IN
COMPOUND TARGETS 49
1.2.4. ENERGY LOSS DISTRIBUTION 50
1.2.5. ANGULAR DISTRIBUTION 52
1.3. MONOCRYSTALLINE TARGETS 55
1.3.1. CHANNELING AND BLOCKING PHENOMENA 55
1.3.2. BASIC DESCRIPTION OF CHANNELING 59
1.3.2.1. TRANSVERSE ENERGY CONSERVATION 59
1.3.2.2. STATISTICS FOR IONS WITH FIXED TRANSVERSE ENERGY ...
. 61
1.3.2.2.1. AXIAL CHANNELING 61
1.3.2.2.2. PLANAR CHANNELING 63
1.3.2.3. TRANSVERSE ENERGY DISTRIBUTION 65
1.3.2.3.1. INITIAL DISTRIBUTION FOR CHANNELING 66
7
1.3.2.3.2. INITIAL DISTRIBUTION FOR BLOOKING 67
1.3.2.4. RUTHERFORD BAOKSCATTERING YIELD 69
1.3.2.4.1. CHANNELING REGIME . 69
1.3.2.4.2. BLOCKING REGIME 72
1.3.2.5. ION FLUX IN A CHANNEL 73
1.3.2.5.1. AXIAL CHANNEL 74
1.3.2.5.2. PLANAR CHANNEL ..
. 78
1.3.3. AXIAL DECHANNELING 80
1.3.3.1. AXIAL DECHANNELING IN PERFECT CRYSTALS 87
1.3.3.2. AXIAL DECHANNELING DUE TO DEFECTS 93
1.3.3.2.1. DECHANNELING CONTRIBUTIONS FROM DIFFERENT DEFECTS ...
. 93
1.3.3.2.2. CALCULATION OF THE DECHANNELING MATRIX 96
1.3.3.2.3. RUTHERFORD BAOKSCATTERING YIELD IN CHANNELING REGIME. . . 103
1.3.4. TWO-BEAM APPROXIMATION ...
. 105
1.3.5. DEFECT ANALYSIS 111
1.3.5.1. ANALYSIS OF POINT DEFECTS 111
1.3.5.1.1. HEAVILY DAMAGED CRYSTALS 112
1.3.5.1.2. WEAKLY DAMAGED CRYSTALS 113
1.3.5.2. ANALYSIS OF CRYSTALS WITH ONE KIND OF EXTENDED DEFECT . . 117
1.3.5.3. ANALYSIS OF CRYSTALS WITH COMPLEX DEFECT STRUCTURES . . . 118
CHAPTER 2 EXPERIMENTAL EQUIPMENT 121
BY A. WITZMANN
2.1
. IO
N BEAM GENERATIO
N AN
D HANDLIN
G 122
2.1.1
. IO
N SOURC
E 122
2.1.1.1
. RADIO-FREQUENC
Y SOURC
E 122
2.1.1.2
. LOW VOLTAG
E AR
C DISCHARG
E SOURC
E 12
3
2.1.1.3
. IO
N SOURCE
S FO
R SPECIA
L APPLICATION
S 124
2.1.2
. ACCELERATO
R 124
2.1.3
. MASS SEPARATIO
N 126
2.1.4
. BEAM HANDLIN
G 12
8
2.1.5
. ENERG
Y STABILIZATIO
N AN
D CALIBRATIO
N 130
2.1.6
. VACUUM SYSTE
M 132
2.2
. TARGE
T SYSTE
M 13
3
2.2.1
. SAMPL
E HOLDER
S 13
3
2.2.2
. BEAM CURREN
T MEASUREMEN
T 135
2.3
. SAFET
Y CONSIDERATION
S 13
7
2.4
. DETECTIN
G SYSTE
M 13
8
2.4.1
. DETECTOR
S 13
8
2.4.1.1
. MAGNETI
C AN
D ELECTROSTATI
C DETECTOR
S 13
8
2.4.1.2
. SEMICONDUCTO
R DETECTOR
S 139
2.4.2
. PREAMPLIFIE
R 142
2.4.3
. SPECTROSCOPI
C AMPLIFIE
R 143
2.4.3.1
. CR-RC PULS
E SHAPIN
G 143
8
2.4.3.2
. DELAY-LIN
E PULS
E SHAPIN
G 14
4
2.4.3.3
. PILE-U
P EFFECT
S 14
4
2.4.4
. MULTICHANNE
L ANALYZE
R . 14
5
CHAPTE
R 3 GENERAL EXPERIMENTAL METHODS 149
BY G. GOET
Z AN
D A
. DITTMA
R
3.1
. RUTHERFOR
D BACKSCATTERIN
G SPECTROMETR
Y (RBS) 149
3.1.1
. SCATTERIN
G GEOMETR
Y 149
3.1.2
. KINEMATI
C FACTO
R 149
3.1.3
* MASS RESOLUTIO
N 152
3.1.4
. ENERG
Y LOS
S AN
D STOPPIN
G CROS
S SECTIO
N 15
3
3.1.5
. ACOEBSIBL
E DEPT
H 156
3.1.6
. DEPT
H RESOLUTIO
N 15
8
3.1.7
. SCATTERIN
G CROS
S SECTIO
N 165
3.1.8
. SPECTRU
M HEIGH
T 168
3.1.8.1
. SINGL
E ELEMENTA
L LAYE
R I
N SURFAC
E APPROXIMATIO
N 16
8
3.1.8.2
. THIC
K SINGL
E ELEMENTA
L LAYE
R 16
9
3.1.8.3
. THIC
K MULTIELEMENTA
L LAYE
R 171
3.1.9
. RUTHERFOR
D BACKSCATTERIN
G SPECTR
A 17
3
3.2
. ELASTI
C RECOI
L DETECTIO
N (ERD) 176
3.2.1
. PRINCIPL
E 176
3.2.2
. DEPT
H RESOLUTION
, ACCESSIBL
E DEPTH
, SENSITIVIT
Y 179
3.3
. NUCLEA
R REACTION
S (NR) 182
3.3.1
. PRINCIPL
E 18
3
3.3.2
. DEPTH RESOLUTION
, ACCESSIBL
E DEPTH
, SENSITIVIT
Y 18
5
3.4
. PARTIOL
E INDUCE
D X-RA
Y EMISSIO
N (PIXE
) 187
3.4.1
. PRINCIPL
E 187
3.4.2
. MASS RESOLUTIO
N AN
D ENERG
Y RESOLUTIO
N ..
. 191
3.4.3.
SENSITIVIT
Y 194
CHAPTE
R 4 APPLICATION TO THE ANALYSIS OF COIIPOSITIOII 197
BY B
. WEBE
R AN
D A
. DITTMA
R
4.1
. SURFAC
E IMPURITIE
S 197
4.1.1
. MASS IDENTIFICATIO
N 197
4.1.2
. TOTA
L AMOUN
T 201
4.2
. THI
N LAYER
S 20
3
4.2.1
. METHOD
S OF CALCULATIO
N 20
3
4.2.1.1
. ENERGY-TO-DEPT
H CONVERSIO
N BY NUMERICA
L METHOD
S 20
4
4.2.1.2
. APPROXIMATIO
N METHOD
S 20
9
4.2.1.3
. DETERMINATIO
N OF COMPOSITIO
N PROFILE
S 211
4.2.2
. DISTRIBUTIO
N OF LO
W IMPURIT
Y CONCENTRATION
S 21
5
4.2.2.1
. IMPLANTATIO
N PROFILE
S 21
5
4.2.2.2
. DIFFUSIO
N PROFILE
S . 219
9
4.2.3. ELEMENTAL LAYERS 220
4.2.3.1. SINGLE LAYER 220
4.2.3.2. ELEMENTAL MULTILAYERS 225
4.2.4. COMPOUND LAYERS 228
4.3. THICK TARGETS 233
4.3.1. HOMOGENEOUSLY DISTRIBUTED IMPURITIES OF LOW
CONCENTRATION ....
. 233
4.3.2. HOMOGENEOUS SAMPLES CONTAINING MORE THAN ONE ELEMENT . . 234
CHAPTER 5 APPLICATION TO THE ANALYSIS OF CRYSTALSTRUCTURE 237
BY E. GLASER AND W. WESCH
5.1. PERFEOT CRYSTALS 237
5.1.1. CRYSTAL STRUCTURE ..
. 237
5.1.2. ORIENTATION 240
5.2. IMPERFECT CRYSTALS 246
5.2.1. POINT DEFECTS, CLUSTERS, AND AMORPHIZED LAYERS- 247
5.2.1.1. DEPTH DEPENDENCE OF THE MINIMUM YIELD X
M
I
N
(Z) 247
5.2.1.2. ENERGY DEPENDENCE OF THE MINIMUM YIELD 250
5.2.1.3. DEPTH DEPENDENCE OF DEFECT CONCENTRATION N^^(Z) 252
5.2.2. DISLOCATIONS, STACKING FAULTS, AND TWIN LAMELLAE ...
. 255
5.2.2.1. DISLOCATIONS 255
5.2.2.1.1. DEPTH DEPENDENCE OF THE MINIMUM YIELD 256
5.2.2.1.2. RESULTS OF YYYYYY ANALYSIS 257
5.2.2.1.3. ENERGY DEPENDENCE OF THE MINIMUM YIELD 258
5.2.2.1.4. INTEGRAL DENSITY OF DISLOCATIONS H
DIS
L
AND DEPTH
DISTRIBUTION OF DISLOCATION DENSITY
N
4I
S
I(
Z
) 261
5.2.2.1.5. AVAILABILITY OF THE DEOHANNELING WIDTH AS A PARAMETER
FOR QUANTITATIVE ANALYSIS 265
5.2.2.1.6. ANALYSIS OF DISLOCATIONS BY PLANAR CHANNELING 266
5.2.2.2. STACKING FAULTS 269
5.2.2.2.1. DEPTH DEPENDENCE OF THE MINIMUM YIELD 269
5.2.2.2.2. RESULTS OF YYYYYY ANALYSIS 271
5.2.2.2.3. ENERGY DEPENDENCE OF THE MINIMUM YIELD 272
5.2.2.2.4. DENSITY OF DISPLACED STRINGS (N
DAT
, N
DST
) 273
5.2.2.2.5. AVAILABILITY OF THE DEOHANNELING CROSS SECTION AS A
PARAMETER FOR QUANTITATIVE ANALYSIS 277
5.2.2.3. TWIN LAMELLAE 278
5.2.2.4. MIXTURE OF STACKING FAULTS, TWIN LAMELLAE, AND
DISLOCATIONS 279
5.2.2.4.1. DETERMINATION OF THE DEFECT DENSITIES ..
. 279
5.2.2.4.2. ENERGY DEPENDENCE OF THE MINIMUM YIELD 281
5.2.3. TEXTURED POLYCRYSTALLINE LAYERS AND LAYERS CONSISTING
OF THICK TWINNED REGIONS 283
10
5.2.3.1. CALCULATION OF THE ANGULAR DEPENDENCE OF THE
BACKSCATTERLNG YIELD X ( YY )
AN
D
*HE
MINIMUM YIELD
X _? YY (ENERGY AND Z.-DEPENDENCE) 283
5.2.3.1.1. TEXTURED POLYCRYSTALLINE LAYERS 283
5.2.3.1.2. THICK TWINNED REGIONS 287
5.2.3.2. DETERMINATION OF THE ANGULAR SPREAD OF THE CRYSTALLITE
AND TWIN ORIENTATIONS 289
5.2.3.3. DETERMINATION OF THE VOLUME FRACTIONS OF GRAIN BOUNDARIES
IN POLYCRYSTALS AND OF TWINS IN TWINNED LAYERS 293
5.2.3.4. CONCLUSIONS 293
5.3. LATTICE LOCATION OF POINT DEFECTS 296
5.3.1. BASIC CONSIDERATIONS 296
5.3.2. IMPURITY ATOMS 298
5.3.2.1. DETECTION OF SUBSTITUTIONAL IMPURITIES 298
5.3.2.2. DIRECT LOCATION BY ANGULAR SCAN MEASUREMENTS 302
5.3.3. SELF INTERSTITIALS 310
5.3.3.1. DIRECT LOCATION BY ANGULAR SCAN MEASUREMENTS
.
311
5.3.3.2. DECHANNELING MEASUREMENTS 315
5.3.3.2.1. TANTALUM 316
5.3.3.2.2. SILICON 317
5.3.3.2.3
. GALLIU
M ARSENID
E 320
APPENDICE
S 32
3
1 ATOMIC DATA 323
A
2 KINEMATIC FACTOR FOR H AS PROJECTILE 329
3 KINEMATIC FACTOR FOR HE AS PROJECTILE 332
4 NUCLEAR STOPPING CROSS SECTION FACTOR E AND CHARACTERISTIC
ENERGIES E, AND E_ FOR H AND HE IONS 335
1
YY
5 H STOPPING CROSS SECTION
Z
337
4
6 HE STOPPIN
G CROS
S SECTIO
N E 340
7 ELECTRONI
C STRAGGLIN
G FUNCTIO
N W FO
R H AN
D HE ION
S 343
8 FACTOR
S
CM AN
D YY FO
R 1 MEV H ION
S AN
D HE ION
S
INCIDEN
T ON S
I 3*5
9 DECHANNELIN
G FUNCTIO
N YY(YY
0
,YY
) 347
1
0 RUTHERFOR
D SCATTERIN
G CROS
S SECTIO
N FO
R 1 MEV H 349
4
11 RUTHERFOR
D SCATTERIN
G CROS
S SECTIO
N FO
R 1 MEV HE 352
12 NUCLEA
R REACTION
S USE
D FO
R TH
E DETECTIO
N OF LIGH
T ELEMENT
S
(PARTICL
E EMISSION
) 35
5
13 NUCLEA
R REACTION
S USE
D FO
R TH
E DETECTIO
N OF LIGH
T ELEMENT
S
(YY(-RA
Y EMISSION
) 356
1
4 X-RA
Y EMISSIO
N ENERGIE
S EY 35
8
11
REFERENCES 361
LIST OF SYMBOLS 368
SUBJECT INDEX 373
12
|
any_adam_object | 1 |
author2 | Götz, Gerhard |
author2_role | edt |
author2_variant | g g gg |
author_facet | Götz, Gerhard |
building | Verbundindex |
bvnumber | BV025873503 |
classification_rvk | UP 5070 UP 9300 |
ctrlnum | (OCoLC)613348830 (DE-599)BVBBV025873503 |
discipline | Physik |
format | Book |
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id | DE-604.BV025873503 |
illustrated | Not Illustrated |
indexdate | 2024-07-09T22:14:07Z |
institution | BVB |
isbn | 3055004973 |
language | German |
oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-019120711 |
oclc_num | 613348830 |
open_access_boolean | |
owner | DE-11 |
owner_facet | DE-11 |
physical | 376 S. |
publishDate | 1988 |
publishDateSearch | 1988 |
publishDateSort | 1988 |
publisher | Akad.-Verl. |
record_format | marc |
series | Physical research |
series2 | Physical research |
spelling | High energy ion beam analysis of solids ed. by Gerhard Götz ; Konrad Gärtner. [Authors: Achim Dittmar ...] Berlin Akad.-Verl. 1988 376 S. txt rdacontent n rdamedia nc rdacarrier Physical research 6 Literaturverz. S. 361 - 367 Ionenstrahl (DE-588)4162347-2 gnd rswk-swf Sekundärionen-Massenspektrometrie (DE-588)4077346-2 gnd rswk-swf Festkörper (DE-588)4016918-2 gnd rswk-swf Festkörper (DE-588)4016918-2 s Ionenstrahl (DE-588)4162347-2 s DE-604 Sekundärionen-Massenspektrometrie (DE-588)4077346-2 s Götz, Gerhard edt Physical research 6 (DE-604)BV000651253 6 DNB Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=019120711&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
spellingShingle | High energy ion beam analysis of solids Physical research Ionenstrahl (DE-588)4162347-2 gnd Sekundärionen-Massenspektrometrie (DE-588)4077346-2 gnd Festkörper (DE-588)4016918-2 gnd |
subject_GND | (DE-588)4162347-2 (DE-588)4077346-2 (DE-588)4016918-2 |
title | High energy ion beam analysis of solids |
title_auth | High energy ion beam analysis of solids |
title_exact_search | High energy ion beam analysis of solids |
title_full | High energy ion beam analysis of solids ed. by Gerhard Götz ; Konrad Gärtner. [Authors: Achim Dittmar ...] |
title_fullStr | High energy ion beam analysis of solids ed. by Gerhard Götz ; Konrad Gärtner. [Authors: Achim Dittmar ...] |
title_full_unstemmed | High energy ion beam analysis of solids ed. by Gerhard Götz ; Konrad Gärtner. [Authors: Achim Dittmar ...] |
title_short | High energy ion beam analysis of solids |
title_sort | high energy ion beam analysis of solids |
topic | Ionenstrahl (DE-588)4162347-2 gnd Sekundärionen-Massenspektrometrie (DE-588)4077346-2 gnd Festkörper (DE-588)4016918-2 gnd |
topic_facet | Ionenstrahl Sekundärionen-Massenspektrometrie Festkörper |
url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=019120711&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
volume_link | (DE-604)BV000651253 |
work_keys_str_mv | AT gotzgerhard highenergyionbeamanalysisofsolids |